CN1210864C - High-gain complementary metal oxide operation amplifier - Google Patents

High-gain complementary metal oxide operation amplifier Download PDF

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Publication number
CN1210864C
CN1210864C CN 03131564 CN03131564A CN1210864C CN 1210864 C CN1210864 C CN 1210864C CN 03131564 CN03131564 CN 03131564 CN 03131564 A CN03131564 A CN 03131564A CN 1210864 C CN1210864 C CN 1210864C
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China
Prior art keywords
amplifier
resistance
transistor
gain
metal oxide
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Expired - Fee Related
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CN 03131564
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Chinese (zh)
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CN1453931A (en
Inventor
吴建辉
袁文师
陆生礼
时龙兴
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Southeast University
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Southeast University
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Priority to CN 03131564 priority Critical patent/CN1210864C/en
Publication of CN1453931A publication Critical patent/CN1453931A/en
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Abstract

The present invention relates to a complementary metal oxide operational amplifier with high gain, particularly to a complementary metal oxide operational amplifier with high input range and high gain. The present invention is especially suitable for occasions where the requirement for unit gain bandwidth is not high, for example, the present invention can be used in circuits with reference voltage sources, etc. The amplifier is composed of a transistor and a resistor which are prepared on a base sheet; the source electrodes of amplifier tubes M1, M2 are respectively connected to the ground through a transistor M7; the output electrode of the amplifier tube M1 is connected in series with two resistance transistors M8, M9; the output end of the resistance transistor M9 is connected with a power source through a constant-current source M4; the output end of the amplifier tube M2 is connected with the power source and bias voltages Vbias 1, Vbias 2 through a constant-current source M3; the bias voltage Vbias 2 provides grid voltage to the transistors M8, M9. The dynamic working range of the present invention is 3V, and the gain can reach 100 db in the whole working range. The input range is widened because the source electrodes of the amplifier tubes are connected in series with resistors; the gain of the amplifier is effectively enhanced because of the two additional tubes, and the amplitude-frequency characteristic is good at the same time.

Description

High-gain CMOS (Complementary Metal Oxide Semiconductor) operational amplifier
One, technical field
Type of the present invention relates to the CMOS (Complementary Metal Oxide Semiconductor) operational amplifier of a kind of high input range, high-gain, being particularly suitable in that unity gain bandwidth is required is not very high occasion, as being applied in the circuit such as reference voltage source, belong to the technical field that operational amplifier is made.
Two, background technology
Operational amplifier is a kind of very important element circuit; in analog integrated circuit and hybrid digital-analog integrated circuit; the design of operational amplifier is particularly crucial; the performance of operational amplifier often directly influences the overall performance of whole integrated circuit (IC) system; therefore, the operational amplifier design is one of popular direction in the integrated circuit (IC) system always.The input range of traditional CMOS two-level operating amplifier is little; Particularly CMOS technology develops towards the small size direction, and the size of pipe reduces, and will cause output resistance to reduce, and therefore gain is done not high; And must series resistance in frequency compensation, be used for cancellation zero point.
For improving input range,, yet will further reduce the operational amplifier gain like this by resistance on the source class string of cmos amplifier.
Three, summary of the invention
1, technical problem
The purpose of this invention is to provide a kind of high-gain, amplitude-frequency characteristic is good, input range is big, the few high-gain CMOS (Complementary Metal Oxide Semiconductor) operational amplifier of used number of tubes simultaneously.
2, technical scheme
High-gain CMOS (Complementary Metal Oxide Semiconductor) operational amplifier of the present invention, formed at on-chip transistor and resistance by preparation, join by transistor and resistance and ground respectively at the source electrode of first, second amplifier tube, output stage at first amplifier tube is connected in series two resistive transistors in proper order, it is first, second resistive transistor, connect power supply at the second resistive transistorized output by first constant-current source, the output of second amplifier tube connects power supply by second constant-current source, two bias voltages are arranged, and a bias voltage offers first, second resistive transistorized grid; Another bias voltage offers the described transistorized grid that joins with ground.Source electrode at first, second amplifier tube is respectively equipped with first, second resistance, the described transistor that joins with ground of another termination of first, second resistance.
Improve gain, an effective way increases output resistance exactly.Its output resistance can be regarded the impedance of amplifier tube and the parallel connection of load impedance as in operational amplifier: a kind of situation can think that output resistance is approximately equal to the impedance of amplifier tube if the resistance of load resistance is much bigger more than the resistance of amplifier tube.Increase the resistance of amplifier tube this moment, promptly indication increases by two pipes in the output stage of amplifier tube, and being equivalent to the amplifier tube resistance of having connected becomes a kind of raising output resistance effective method; Another situation, if the resistance of its duty ratio amplifier tube is little, increase the resistance of amplifier tube this moment, be that indication increases by two pipes in the output stage of amplifier tube, the resistance of amplifier tube just can be improved like this, when the resistance of amplifier tube and load resistance were in parallel, total output resistance also can be improved.Simultaneously, there is a pipe will play the frequency compensation effect in two pipes of increase, can saves the resistance that frequency compensation is used like this, can reduce area.Simultaneously, will effectively improve input range at the resistance of source series that amplifies pipe.
3, beneficial effect
High-gain CMOS (Complementary Metal Oxide Semiconductor) operational amplifier is the cmos operational amplifier of work under a kind of 5v of being adapted at supply voltage, and its dynamic duty scope is 3V, and in whole working range, its gain can reach 100db; Source series resistance at amplifier tube has improved input range, increases by two pipes and effectively improves Amplifier Gain, wherein has a pipe also to play the frequency compensation effect; Amplitude-frequency characteristic is good simultaneously.
Gain height, the amplitude-frequency characteristic of operational amplifier of the present invention is good, require used number of tubes few during input range Datong District, when increasing by two pipes, can see that by emulation the gain of operational amplifier can reach more than the 90db, and the influence of bandwidth is not had substantially; At the less resistance of resistance of source series that amplifies pipe, can effectively improve input range simultaneously, this amplifier is worked under the 5v single supply, and its output area is at 3V; And not influence settling time to operational amplifier.Owing to there is not resistance, the area of domain does not increase, reduce simultaneously since resistance in influence that technologic deviation caused.
Four, description of drawings
Fig. 1 is circuit theory diagrams of the present invention, amplifier tube M1, M2, constant-current source M3, constant-current source M4, transistor M5, transistor M6, transistor M7, bias voltage Vbias1, Vbias2, resistive transistor M8, M9 is wherein arranged, resistance R 1, R2
Five, embodiment
High-gain CMOS (Complementary Metal Oxide Semiconductor) operational amplifier of the present invention, formed at on-chip transistor and resistance by preparation, first, the second amplifier tube M1, the source electrode of M2 joins by transistor M7 and resistance and ground respectively, output stage at the first amplifier tube M1 is connected in series two resistive transistors in proper order, promptly first, the second resistive transistor M8, M9, output at the second resistive transistor M9 connects power supply by the first constant-current source M4, the output of the second amplifier tube M2 connects power supply by the second constant-current source M3, two bias voltages are arranged, and a bias voltage offers first, the second resistive transistor M8, the grid of M9; Another bias voltage offers grid described and the transistor M7 that ground joins.Source electrode at first, second amplifier tube M1, M2 is respectively equipped with first, second resistance R 1, R2, the described transistor M7 that joins with ground of another termination of first, second resistance R 1, R2.
Two bias voltages of operational amplifier, the Vbias2 biasing provides the grid voltage of first, second resistive transistor M8, M9, and the Vbias1 biasing provides the gate voltage of transistor M7, M6.Constant-current source M3, M4 during as the operational amplifier load, regard it as load that resistance value is very big at constant-current source, and its output resistance can be regarded the impedance of amplifier tube and the parallel connection of load impedance as in operational amplifier.Increasing by two pipes in the output stage of amplifier tube is first, second resistive transistor M8, M9, and first, second resistive transistor M8, M9 are connected into resistance, is equivalent to the amplifier tube resistance of having connected.Thereby the resistance of amplifier tube just obtains certain increase, and with the load parallel connection time, the output resistance resistance of its operational amplifier obtains certain raising.Simultaneously, the resistive transistor M8 pipe of increase will play the frequency compensation effect, so not only can save resistance, can also reduce area.In addition, source series resistance R 1, the R2 at amplifier tube will effectively improve input range.Constitute constant-current source by bias voltage Vbias1, M7, M6, wherein the bias current that provides of first order amplifier is provided constant-current source M7, and constant-current source M6 is the active load of second level amplifier.Constant-current source M5, M6 constitute second level amplifier together, and transistor M5 is an amplifier tube.

Claims (2)

1, a kind of high-gain CMOS (Complementary Metal Oxide Semiconductor) operational amplifier, formed at on-chip transistor and resistance by preparation, it is characterized in that, first, second amplifier tube (the M1, M2) source electrode joins by transistor (M7) and resistance and ground respectively, output stage at first amplifier tube (M1) is connected in series two resistive transistors in proper order, promptly first, the second resistive transistor (M8, M9), output at the second resistive transistor (M9) connects power supply by first constant-current source (M4), the output of second amplifier tube (M2) connects power supply by second constant-current source (M3), two bias voltages are arranged, and a bias voltage offers first, the second resistive transistor (M8, M9) grid; Another bias voltage offers the grid described and transistor (M7) that ground joins.
2, high-gain CMOS (Complementary Metal Oxide Semiconductor) operational amplifier according to claim 1, it is characterized in that being respectively equipped with first, second resistance (R1, R2) the described transistor (M7) that joins with ground of another termination of first, second resistance (R1, R2) at the source electrode of first, second amplifier tube (M1, M2).
CN 03131564 2003-05-27 2003-05-27 High-gain complementary metal oxide operation amplifier Expired - Fee Related CN1210864C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 03131564 CN1210864C (en) 2003-05-27 2003-05-27 High-gain complementary metal oxide operation amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 03131564 CN1210864C (en) 2003-05-27 2003-05-27 High-gain complementary metal oxide operation amplifier

Publications (2)

Publication Number Publication Date
CN1453931A CN1453931A (en) 2003-11-05
CN1210864C true CN1210864C (en) 2005-07-13

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CN 03131564 Expired - Fee Related CN1210864C (en) 2003-05-27 2003-05-27 High-gain complementary metal oxide operation amplifier

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Granted publication date: 20050713

Termination date: 20110527