CN1209661C - Thin film transistor style LCD with color filter for reducing spot defects - Google Patents
Thin film transistor style LCD with color filter for reducing spot defects Download PDFInfo
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- CN1209661C CN1209661C CN 02127598 CN02127598A CN1209661C CN 1209661 C CN1209661 C CN 1209661C CN 02127598 CN02127598 CN 02127598 CN 02127598 A CN02127598 A CN 02127598A CN 1209661 C CN1209661 C CN 1209661C
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- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 230000007547 defect Effects 0.000 title description 9
- 238000000034 method Methods 0.000 claims abstract description 51
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 239000010408 film Substances 0.000 abstract description 70
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 13
- 239000011159 matrix material Substances 0.000 abstract description 8
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 73
- 229920002120 photoresistant polymer Polymers 0.000 description 30
- 229920005989 resin Polymers 0.000 description 25
- 239000011347 resin Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- 239000011241 protective layer Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- -1 silicon nitrides Chemical class 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- WNJSKZBEWNVKGU-UHFFFAOYSA-N 2,2-dimethoxyethylbenzene Chemical compound COC(OC)CC1=CC=CC=C1 WNJSKZBEWNVKGU-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- YEIGUXGHHKAURB-UHFFFAOYSA-N viridine Natural products O=C1C2=C3CCC(=O)C3=CC=C2C2(C)C(O)C(OC)C(=O)C3=COC1=C23 YEIGUXGHHKAURB-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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Abstract
The present invention relates to a thin film transistor type liquid crystal display with a color filter and a making method of the liquid crystal display. The liquid crystal display comprises a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors and a plurality of pixel electrodes, wherein the scan lines are arranged in parallel; the data lines plumb the scan lines and are mutually arranged in parallel; the thin film transistors are close to the intersecting points of the scan lines and the data lines; the pixel electrodes are arranged in a dot matrix shape and are connected with the thin film transistors; a formation region of a light shielding film at least covers the thin film transistors, but does not cover a dyke region which hinders a developing agent from flowing when the light shielding film is patterned. The present invention is used as an embodiment, the light shielding film can be formed along the data lines and parts of the scan lines, but the light shielding film does not cover the scan lines which are positioned between adjacent data lines.
Description
Technical field
The present invention relates to LCD and manufacture method thereof; More particularly, the present invention relates to a kind of film transistor type LCD that reduces point defect, band color filter.
Background technology
For obtaining the LCD of high definition, need to improve the distribution density of pixel.In the LCD of prior art, color filter is configured in relative substrate one side with photomask, is difficult to make the aperture area maximization of each pixel, that is to say to be difficult to make the aperture of each pixel than maximization.This is because in the manufacture process of this LCD, during with relative substrate, may produce alignment error in component film transistor (TFT) substrate between the location of pixels of thin film transistor substrate and relative substrate.Therefore, need in thin film transistor substrate and relative substrate, be pre-formed the pixel that has the franchise surplus.
On the other hand, a kind of thin film transistor (TFT) (TFT) type LCD that is called band color filter (CF) has been proposed.In the TFT structure of this band CF, color filter and shading rete are formed on active matrix substrate one side, promptly are positioned at substrate one side that forms on-off elements such as thin film transistor (TFT).In this structure because color filter and photomask are formed on TFT substrate one side with pixel electrode, therefore need not the considered pixel electrode with color filter between the franchise problem of aiming at.Like this, just can simplify the aperture ratio of manufacture process and each pixel of raising LCD of LCD.
Figure 11 is a part enlarged diagram, shows the pixel part of the film transistor type LCD of prior art band color filter.Figure 12 shows thin film transistor (TFT) and fairlead part enlarged diagram partly in Figure 11 LCD.
In structure shown in Figure 11, comprise the sweep trace (signal line) 81 of many mutual horizontal arrangement and the data line (source signal line) 82 of mutual horizontal arrangement, data line 82 is vertical mutually with sweep trace 81.Many thin film transistor (TFT)s 83 be configured in every data line and sweep trace joining near.The grid 84 of thin film transistor (TFT) 83 links to each other with sweep trace 81, and its source electrode 85 links to each other with data line 82, and drain electrode 86 links to each other with drain signal line 87.Drain signal line 87 is a lead, and it links to each other with pixel electrode 90 by the fairlead 89 of neighbor scanning line 88, constitutes an energy-storage capacitor with adjacent scanning lines 88 simultaneously.
As shown in figure 12, shading rete 102 be formed on thin film transistor (TFT) 83 above, data line 82 constitutes grille-like with sweep trace 81.
At first, as shown in FIG. 13A, sputter one layer thickness is the metal film that is made of materials such as aluminium, molybdenum, chromium of 100-400 millimicron on the transparent and dielectric base of being made by materials such as glass 91.Described metal film is undertaken graphical by the method for photographic printing and forms sweep trace (signal line) 81.
Then, forming that one deck is made up of materials such as silicon nitrides, thickness by methods such as CVD on sweep trace 81 is the gate insulating film 93 of 100-200 millimicron.On gate insulating film 93, sputter one layer thickness is the metal film 100-400 millimicron, that be made up of materials such as aluminium, molybdenum, chromium again.By the photographic printing method this layer metal film carried out graphically, thereby form drain signal line 87.Then, form the silicon nitride passive film 95 that a layer thickness is the 100-200 millimicron again in the outside of said structure.
Secondly, cover the solid colored photoresist of the negative light of one deck by centrifugal covering process on passivating film 95, described colored photoresist is to obtain by the diffusion of viridine green in acryl resin.By the speed of rotation of control substrate, with the thickness adjusted to 1 of colored photoresist film.5 microns.Then, adopt electric furnace that workpiece is taken the photograph under the formula degree 80 and dried 2 minutes, and make the predetermined pattern exposure on colored photoresist.Afterwards, adopt tetramethylammonium hydroxide (TMAN) developer that the workpiece of exposure is developed, thereby form the green glow color filter at each predetermined position.For making the fairlead 89 that is used to connect drain signal line 87 and pixel electrode 90 afterwards, the zone that forms fairlead in desire should be stayed an opening in advance.The size of described opening is wanted to contain fairlead 89 at least.Then, in the environment of cleaning stove, workpiece is taken the photograph 230 and cured under the formula degree 60 minutes, thereby green glow color filter 96 is solidified.
Employing forms ruddiness color filter and blue light color filter with above-mentioned manufacturing green glow color filter 96 similar methods in the adjacent position.
After forming color filter, by centrifugal covering process will photosensitive or photoresist-be that photomask resin 100 covers on the color filter, described photomask resin spreads in acryl resin by materials such as the carbon that insulate and obtains.Speed of rotation by the control substrate is 1.5 microns with the thickness adjusted of photoresist film.
Shown in Figure 13 B, prepare photomask 101 by the graphical of metal photomask, described metal photomask is made of the metals such as chromium on the quartz substrate.Adopting photomask 101 to make sweep trace is photoresist 100 exposures on the color filter 96 above the signal line 81, and photoresist 100 is solidified.
Shown in Figure 13 C, after removing photomask 101, workpiece is through the spray of developer, and the part that photoresist 100 is not cured is removed, thereby forms photomask 102.In this course, because developer is sprayed on transparent dielectric base 91 as shower by the top, if transparent dielectric base 91 is moved along the Y direction shown in Figure 13 C, then developer moves along directions X shown in Figure 13 C.In this case, play a part a kind of dykes and dams, will form the residue of the zone formation photoresist 100 of fairlead 89 in passivating film 95 desires because color filter 96 and photomask 102 are piled up the step portion of formation.After this, photomask 102 is taken the photograph 230 and is cured 60 minutes under the formula degree to solidify.When photomask 102 was cured and solidifies, the residue on the passivating film 95 was also cured simultaneously and is solidified.
For example, shown in Figure 13 D, the formation thickness of transparent acrylic acid series photoresist film is about 2.5 microns.Then, make the acrylic acid etch-resist resin graphical, thereby make the position formation opening of fairlead 89 in desire by graph exposure and development.Afterwards, workpiece is taken the photograph 230 and is cured 60 minutes under the formula degree with curing, thereby forms outer cover protective layer 98.
Shown in Figure 13 E, novolac resin type photoresist is coated on the work piece substrate and is undertaken graphically by preassigned pattern.By adopting patterned novolac resin photoresist film as photomask, passivating film 95 forms fairlead 89 through etching.In this case, because in fairlead 89, there is aforesaid residue, so can not remove the passivating film 95 in the fairlead 89 fully.Therefore, the contact region between drain signal line 87 and the pixel electrode 90 is with narrow.
Shown in Figure 13 F, after removing the novolac resin photoresist film, on outer cover protective layer 98, form the nesa coating that constitutes by indium tin oxide materials such as (ITO) by adopting sputtering method, draw drain signal line 87 by fairlead 89.Make transparent conducting layer figureization then, to form pixel electrode 90.Because of the contact region between drain signal line 87 and the pixel electrode 90 is narrower as mentioned above, the contact resistance between drain signal line 87 and the pixel electrode 90 is bigger.
After this, the TFT substrate of Zhi Zaoing is assembled with relative substrate as stated above, filling liquid crystal material between TFT substrate and relative substrate.Like this, just, finished the manufacture process of LCD panel.
At Japanese Patent Laid-Open Publication NO.Among the 2000-231123, the manufacture method of another prior art LCD is disclosed; In described method, the photomask resin can not remain in the fairlead.In described disclosed method, when color filter or black matrix formation photomask, be pre-formed opening in each zone that comprises fairlead, after forming color filter, form black matrix.In this case, at the position that each color filter contacts with black matrix, the end of black matrix and the end of color filter are overlapped.Like this, black matrix partly covers color filter, and the sidewall of black matrix-at least is near the position of passivating film-obtain the protection of color filter, thereby can prevent peeling off of black matrix figure.
In conjunction with the accompanying drawings 11,12 and 13A-F carry out in the prior art LCD and manufacture method thereof of above-mentioned explanation, the resin photomask be patterned into grid form and grill-shaped resin photomask around each zone when forming fairlead, can not remove the photomask resin in each fairlead fully, this is because grill-shaped resin photomask has the dykes and dams effect.Therefore, after development, will there be the residue of photomask resin in fairlead.
Even remove afterwards under the situation of passivating film, also can not remove the part passivating film under the residual photomask resin in the back of developing.Therefore, contacting between drain electrode or drain signal line and pixel electrode harmed, thereby will produce point defect.
As mentioned above, when photomask formed grid or latticed form, the residual photomask resin residue thing in back that develops caused contact deficiency or point defect possibly.Every display panels produce 20 or more the probability of multiple spot defective be about 20%.
Simultaneously, in the open described liquid crystal display board fabrication method of NO.2000-231123 of Jap.P., when removing the photomask resin by developer, when the substrate of the TFT structure of band CF along a direction move and developer when another direction is moved, also there is the dykes and dams effect in photomask.The residue that therefore, in each fairlead, also can have the photomask resin.
Summary of the invention
Carry out this invention at the problems referred to above just, an object of the present invention is to provide a kind of LCD and manufacture method thereof that can effectively reduce point defect.
Furtherly, the purpose of this invention is to provide a kind of can effectively reduce point defect, the band color filter film transistor type LCD and manufacture method thereof.
Again furtherly, the purpose of this invention is to provide a kind of film transistor type LCD and the manufacture method thereof that can improve the reliability that contacts between drain electrode or drain signal line and pixel electrode and validity, band color filter greatly.
The purpose of this invention is to provide a kind of film transistor type LCD and manufacture method thereof with color filter, in described method, adopting developer that the photomask resin is carried out when graphical, even along another direction relative motion, also can not there be the residue of photomask resin in developer in each fairlead.
Purpose of the present invention is exactly the more existing defectives of film transistor type LCD that will overcome prior art band color filter.
On the one hand, the invention provides a kind of LCD and manufacture method thereof, described LCD comprises: the sweep trace of many configured in parallel, the data line of many vertical with sweep trace, mutual configured in parallel, be configured near the thin film transistor (TFT) in every sweep trace and data line intersection, and the pixel electrode that is configured to a formation, links to each other with thin film transistor (TFT); Described manufacture method comprises and forms one deck photomask, and the formation position of described photomask should cover the zone that comprises thin film transistor (TFT) at least, but photomask hinders when graphical except the dykes and dams zone that developer flows.
Here, when forming photomask, preferably make also cover data line of photomask.
In addition, when forming photomask, preferably make also part cover data line of photomask, but be in except the data line between adjacent scanning lines.
Also have, when forming photomask, preferably make photomask also part cover sweep trace, but be in except the sweep trace between adjacent data line.
In addition, when forming photomask, preferably make photomask cover sweep trace.
When in the LCD in each zone that sweep trace and data line surround all during leaded hole, when forming photomask, had better not make photomask cover the dykes and dams district that obstruction developer that desire forms fairlead flows.
When forming photomask, developer preferably flows along the long length direction of pixel electrode.
Each pixel electrode is preferably formed as rectangle.
On the other hand, the invention provides a kind of LCD and manufacture method thereof, described LCD comprises: the sweep trace of many configurations that are parallel to each other, the data line of many vertical with sweep trace, mutual configured in parallel, be configured near the thin film transistor (TFT) in every sweep trace and data line intersection, and the pixel electrode that is configured to a formation, links to each other with thin film transistor (TFT); Described manufacture method comprises and forms one deck photomask, and the formation position of described photomask should cover the zone that comprises thin film transistor (TFT) at least, but do not cover the sweep trace part that is between adjacent data line or be in data line part between adjacent scanning lines.
Here, the best also cover data line of formed photomask.
In addition, formed photomask preferably also part cover sweep trace, but be in except the sweep trace between adjacent data line.
Also have, formed photomask preferably also covers sweep trace.
In addition, formed photomask is also part cover data line preferably, but is in except the data line between adjacent scanning lines.
All there is a fairlead in each zone that described LCD is preferably in sweep trace and data line encirclement.
Each pixel electrode is preferably the rectangle of elongating along the data line direction, and formed photomask does not cover the sweep trace part between adjacent data line.
Description of drawings
The detailed description of carrying out below in conjunction with accompanying drawing will make above-mentioned and other characteristic of the present invention and advantage more distinct, in institute's drawings attached, will adopt same coded representation identical or corresponding structure,
Accompanying drawing comprises:
Fig. 1 part floor map shows the pixel portion of first embodiment of the invention LCD.
Fig. 2 part floor map shows the thin film transistor (TFT) and the fairlead part of LCD among Fig. 1.
Fig. 3 is the phantom view of C-C line xsect among Fig. 2.
Fig. 4 is the phantom view of A-A line xsect among Fig. 2.
Fig. 5 is the phantom view of B-B line xsect among Fig. 2.
Fig. 6 A-6D is the phantom view of C-C line xsect among Fig. 2, shows the workpiece cross section structure in the LCD manufacture process of the present invention.
Fig. 7 floor map shows by LCD panel of the present invention.
Fig. 8 is the cut-open view of E-E line xsect among Fig. 7.
Fig. 9 comprises the synoptic diagram of the LCD panel that forms in the manufacture process and the part zoomed-in view of a LCD on substrate of glass.
Figure 10 side view shows the situation that adopts developer removal photoresist in the photomask forming process, and wherein the part amplification view shows the fairlead part of LCD panel.
Figure 11 part enlarged diagram shows the pixel portion of the film transistor type LCD of prior art band color filter.
Figure 12 part zoomed-in view shows the thin film transistor (TFT) and the fairlead part of Figure 11 LCD.
Figure 13 A-F is the phantom view of D-D line xsect among Figure 12, shows the workpiece cross section in the prior art LCD manufacture process.
Embodiment
The now auspicious in conjunction with the accompanying drawings embodiments of the invention of stating.
Fig. 1 is the synoptic diagram that shows liquid crystal display pixel part in the first embodiment of the invention.In LCD shown in Figure 1, many sweep traces (signal line) 1 configuration parallel to each other, many data lines (source signal line) 2 be parallel to each other and with sweep trace 1 arranged perpendicular.Thin film transistor (TFT) (TFT) is configured near the intersection of each sweep trace 1 and data line 2.The gate electrode 4 of thin film transistor (TFT) 3 links to each other with sweep trace 1, and source electrode 5 links to each other with data line 2, and drain electrode 6 links to each other with drain signal line 7.Drain signal line 7 links to each other with pixel electrode 10 by being positioned near sweep trace (signal line) 8 fairleads 9.The pixel electrode 10 that links to each other with drain signal line 7 constitutes pixel capacitance by the liquid crystal layer of middle filling with the comparative electrode that forms in relative substrate.Drain signal line 7 has the part of extending along adjacent scanning lines, thereby constitutes perhaps storage capacitor of additional electrical with adjacent sweep trace 8.
Generally speaking, in LCD, for satisfying the requirement that high definition shows, pixel region is quite trickle, and the capacity of pixel capacitance is also with less.If pixel capacitance is less, even have in employing under the situation of thin film transistor (TFT) with the reduction leakage current of high offresistance, the electromotive force of pixel electrode also can sharply descend, thereby can not keep the electromotive force of pixel electrode in the time of a width of cloth picture.Therefore, provide the additional capacitor of configuration in parallel, the electromotive force retention performance of each pixel electrode that is used to show with improvement with pixel capacitance.
As mentioned above, some and adjacent sweep trace 8 constitute this additional capacitor in the drain signal line 7.The purpose that forms drain signal line 7 along adjacent sweep trace 8 is exactly to improve the aperture ratio of each pixel.Simultaneously, each pixel electrode 10 forms the rectangle of elongating along data line 2 directions.
Fig. 2 is the part zoomed-in view that shows thin film transistor (TFT) and fairlead structure in Fig. 1 LCD.Fig. 3 is the phantom view along C-C line xsect among Fig. 2.
As shown in Figures 2 and 3, on transparent dielectric base 11, form sweep trace (signal line) 1, but except the position of desire manufacturing fairlead.On sweep trace 1, form gate insulating film 13.On gate insulating film, further form drain signal line 7, make drain signal line 7 parts cover sweep trace 1.Like this, between sweep trace 1 and drain signal line 7, just formed aforesaid additional capacitor.
Then, on the workpiece that obtains by the way, pile up formation passivating film 95, color filter 16 and outer cover protective layer 17 in order.On outer cover protective layer 17, form pixel electrode 10.Pixel electrode 10 links to each other with drain signal line 7 by the fairlead 9 of break-through outer cover protective layer 17, color filter 16 and passivating film 15.
Fig. 4 is the cut-open view along A-A line xsect among Fig. 2.As Fig. 2 and shown in Figure 4, thin film transistor (TFT) 3 is formed on the transparent dielectric base 11.That is to say that gate electrode 4 is formed on the transparent dielectric base 11, gate insulating film 13 covering grid electrodes 4.Simultaneously, semiconductor layer 12 be formed on gate insulating film 13 above, also be covered with gate electrode 4.Source electrode 5 links to each other with the upper surface of drain electrode 6 with semiconductor layer 12, and they are separated from each other in the centre of semiconductor layer 12.Source electrode 5 links to each other with semiconductor layer 12 respectively with drain electrode 6, has so just constituted thin film transistor (TFT) 3.Form passivating film 15 then, make its covering comprise the whole basal area of thin film transistor (TFT) 3, on passivating film 15, form color filter 16.Position at color filter 16 cover film transistors 3 forms photomask 14.Be formed in the whole substrate that comprises the first outer cover protective layer at the formation first outer cover protective layer 14, the second outer cover protective layers 19 on the photomask 14.
Fig. 5 is the phantom view along B-B line xsect among Fig. 2.As Fig. 2 and shown in Figure 5, data line 2 is formed on the transparent dielectric base 11.A pixel region in data line 2 and transparent insulation substrate 11 forms color filter 20, and color filter 20 on data line 2 and the suprabasil one other pixel of transparent insulation district form the color filter 16 with color filter 20 different colours.Form photomask 14 then, make its cover data line 2 and adjacent part thereof.Be formed in the whole substrate that comprises the first outer cover protective layer 18 at the formation first outer cover protective layer 18, the second outer cover protective layers 19 on the photomask 14.
As indicated in Fig. 2,3,4 and 5, by in the LCD of the present invention, the photomask of bar palisade be formed on data line 2 and thin film transistor (TFT) 3 above, but do not cover on the sweep trace (signal line) 1-except data line 2 intersections.
Consult Fig. 6 A-6D, now will illustrate by LCD manufacture method of the present invention.Fig. 6 A-6D is along the phantom view of C-C line xsect among Fig. 2, shows the workpiece cross section in the LCD manufacture process of the present invention.
At first, as shown in Figure 6A,, on transparent dielectric base 11 such as glass, form the metal film of materials such as aluminium that a layer thickness is the 100-400 millimicron, molybdenum, chromium by sputtering method.Make described metal film graphical by photoetching process, thereby form sweep trace (signal line) 1.
Secondly, adopt methods such as CVD, on sweep trace 1, form the gate insulating film 13 that material such as silicon nitride constitutes.The thickness of gate insulating film is about the 100-200 millimicron.Use sputtering method, on gate insulating film 13, form the metal film that materials such as aluminium that a layer thickness is the 100-400 millimicron, molybdenum, chromium constitute again.Make metal film graphical by photoetching process, thereby form drain signal line 7.Then, forming a layer thickness in whole substrate is the silicon nitride passive film 15 of 100-200 millimicron.
Secondly, shown in Fig. 6 B, adopt the method for centrifugal covering, form the solid colored photoresist of the negative light of one deck on passivating film 15, described photoresist spreads in acryl resin by viridine green to be produced.By the speed of rotation of controlling substrate formed photoresist film is reached and be about 1.5 microns thickness.Then, adopt electric furnace that workpiece is taken the photograph under the formula degree 80 and dried 2 minutes, predetermined pattern is exposed on described colored photoresist film layer.Adopt tetramethylammonium hydroxide (TMAH) developer that the workpiece of exposure is developed again, thereby form green glow color filter 16 in each predetermined zone.At this, opening will be reserved in the operation zone of desiring to be formed for to connect the fairlead 9 of drain signal line 7 and pixel electrode 10 afterwards.The size of opening should be able to comprise fairlead 9 at least.After this, in the cleaning furnace atmosphere, workpiece is taken the photograph 230 and cured under the formula degree 60 minutes, thereby green glow color filter 16 is solidified.
By forming ruddiness color filter and blue light color filter with the similar method of above-mentioned formation green glow color filter.
Afterwards, on color filter 16, form photomask 14 by aforementioned manner.But in the present invention, photomask 14 is not formed on the xsect position along the C-C line, and photomask 14 does not therefore draw in Fig. 6 B-D.
Shown in Fig. 6 C, adopted thickness to be about 2.5 microns the transparent photosensitive resin or the photoresist of oleic series are with the protection color filter.Then, make transparent photosensitive acrylic resin graphical, forming openings with fairlead 9 corresponding each position by graph exposure and development.Workpiece is taken the photograph 230 cured under the formula degree and solidified 60 minutes, thereby form outer cover protective layer 17.
Shown in Fig. 6 D, novolac resin (NOVALAC) photoresist is used on the work piece substrate and by predetermined pattern it has been carried out graphically.Adopt described patterned photoresist film as mask, passivating film 15 is etched with forms fairlead 9.By the present invention, photomask is not formed on the color filter 16 in the cross section of C-C line, does not remain in the fairlead 9 so do not have the residue of photomask.Therefore, provide possibility for from fairlead 9, removing passivating film 15 fully.
After removing the novolac resin photoresist, on outer cover protective layer 17, form the nesa coating that one deck is made up of indium tin oxide materials such as (ITO) by sputtering method, draw drain signal line 7 by fairlead 9.Make transparent conducting film figureization then, to form each pixel electrode 10.Like this, just obtained having the structure in cross section shown in Figure 3.At this, the thickness of wishing transparency conducting layer is as far as possible greatly to obtain effective covering, the material of nesa coating can be reached fully adheres to, thereby make between nesa coating and the drain signal line be electrically connected reliable and stable.But consider and adopt the feasibility of ITO as nesa coating, the thickness of nesa coating preferably is about 100 millimicrons.
After this, the TFT substrate of Huo Deing is assembled with relative substrate as stated above, filling liquid crystal material between TFT substrate and the relative substrate.Thereby, finish the manufacturing of LCD panel.
As mentioned above, in the present embodiment, except that with the data line intersection sweep trace on do not form photomask, so the ladder height of each fairlead is less.Therefore, when adopting developer to remove photoresist, the residue that does not have photoresist remains in the fairlead, thereby can remove the passivating film in the fairlead fully.Like this, can reduce the interelectrode contact resistance of drain signal line and respective pixel.
Fig. 7 is the floor map of LCD panel of the present invention.Fig. 8 is the cross section view along E-E line among Fig. 7.
As shown in Figure 7 and Figure 8, comprise TFT substrate 30 and relative substrate 31 by LCD panel of the present invention, described two substrates all are rectangle and all comprise a transparent substrates of being made by materials such as glass.As shown in Figure 8, between TFT substrate 30 and relative substrate 31 filling liquid crystal material 32.
Thin film transistor substrate 30 disposes relatively with relative substrate 31, keeps preset space length between them and by sealing along the encapsulant 35 of TFT substrate 30 with relative substrate 31 circumferential arrangement.At the outer rim configuration signal terminal of TFT substrate 30 along its both sides.That is to say that many levels (H) side data signal terminal 36 is vertically drawn by a side of display board, and many vertically scanning terminals 37 of (V) side are drawn laterally along a longitudinal edge of display board.Substrate 31 does not cover horizontal side (H) terminal 36 and vertical side (V) terminal 37 relatively.
With the relative opposite side of a side that disposes terminal 37, have filling orifice 38 in the appropriate location of encapsulant 35, be used for liquid crystal material is injected into space between TFT substrate 30 and the relative substrate 31.After liquid crystal material being injected between TFT substrate 30 and the relative substrate 31, make filling orifice 39 sealings with encapsulant 39.
As shown in Figure 8, gate electrode 40 is formed in the TFT substrate 30, gate insulating film 41 covering grid electrodes 40.On gate insulating film 41, form semiconductor layer 42, make semiconductor layer 42 by gate insulator 41 covering grid electrodes 40.Source electrode 43 links to each other with semiconductor layer 42 with drain electrode 44, and they are separated by the centre of semiconductor layer 42.
On passivating film 45, forming photomask 33 with the corresponding zone of TFT.Also shown visual frame photomask 33A simultaneously among the figure, it be formed on V side terminal 37 near.Yet, do not clearly illustrate that in the drawings visual frame photomask 33A is formed in around around the image displaying area.Then, the corresponding site at image displaying area forms ruddiness color filter 46R, blue light color filter 46B and green glow color filter (not drawing among the figure).
Afterwards, form the outer cover protective layer 47 that covers color filter 46 and passivating film 45 again.Many transparent pixel electrodes 48 are configured on the outer cover protective layer 47.Pixel electrode 48 generally is made up of the ITO film and is configured by rectangular.
When adopting above-mentioned TFT as on-off element, drain electrode 44 plays a part to connect the lead-in wire electrode of pixel electrode 48 and on-off element.Drain electrode 44 links to each other by drain signal line (not drawing among the figure) with pixel electrode 48, and fairlead (not drawing among the figure) is configured near the adjacent scanning lines, and it passes outer cover protective layer 47 and passivating film 45.
The adjustment film 51 that forms in the substrate 31 is covered with the transparent common electrode 52 that forms in relative substrate 31 relatively.The common electrode 52 of relevant configuration, pixel electrode 48 and liquid crystal material 32 constitute pixel capacitance.
At the outside surface of TFT substrate 30 and relative substrate 31-, further form TFT lateral deviation vibrating diaphragm 53 and relative base side polarizing coating 54 respectively promptly at the lower surface of TFT substrate 30 shown in Figure 8 and the upper surface of relative substrate 31.
In the above-described embodiments, photomask is not formed on the sweep trace zone that is between data line.When the etchant that is used for the etching photomask when moving across the direction of data line, still can partly remove photomask on the data line by the length direction of data line.
Below, with the accompanying drawings second embodiment of the present invention.
Fig. 9 is a floor map that is in the manufacture process, adopts the LCD panel of substrate of glass, also comprises the part zoomed-in view of a described LCD panel among Fig. 9.Suppose, on the substrate of glass 71 of 370*470 millimeter, effectively dispose every LCD panel 72 that is of a size of 6.3 inches.In this case, as shown in Figure 9, can dispose 4 display panels 72 at its length direction of substrate of glass 71 upper edges, configuration 2 display panels 72 promptly dispose 8 LCD panel 72 altogether on substrate of glass 71 on the direction vertical with its length direction.By the part zoomed-in view of LCD panel 72 as seen, each pixel electrode is a rectangle, and the length direction of pixel electrode is consistent with the length direction of substrate of glass 71.
Figure 10 side view shows the reset procedure of photoresist film, and described removing adopts developer to carry out after photomask forms and exposes, and comprises the materials such as insulation carbon of diffusion in the described photoresist.In Figure 10, also comprise a part amplification view that shows the LCD panel fairlead.
After forming color filter, in the TFT substrate, also to cover one deck and in acryl resin, spread resulting photoresist film by materials such as insulation carbon.Then, make the photoresist film exposure, adopt developer to remove the photoresist that is not cured.
In this case, as shown in figure 10, LCD panel 72 is formed on before development on the substrate of glass 71.Developer is sprayed on the substrate of glass 71 by the top, and substrate of glass 71 is done the motion corresponding to substrate of glass 71 length directions shown in Y among Figure 10.
Di sopra is described in conjunction with Fig. 9, and each pixel electrode is a rectangle, and its length direction is consistent with the length direction of substrate of glass 71.Under this structure, help facility and the smooth flow of developer on the pixel electrode length direction.Therefore in this case, as shown in figure 10, the residue of photoresist can not remain in the fairlead.
Like this, can effectively reduce contact deficiency or the point defect that causes because of the back photomask resin residue thing that develops.The quantity that every display panels produces point defect can reduce to 0-5.
In the part amplification view of Figure 10, show that photomask is not formed on the color filter 73; But the present invention also is applicable to the situation that forms photomask on color filter 73.When on color filter 73, forming photomask,, also can obtain promising result aspect the removal residue though can not remove residue fully by the present invention.
In the LCD of the invention described above first and second embodiment, storage capacitor is the grid energy storing structure; But the present invention also is applicable to the LCD with copolar energy storing structure.
As mentioned above, by the present invention, photomask be not formed on the data line intersection outside sweep trace on, so the ladder height at fairlead position is less.Therefore, when removing the photomask resin with developer, do not have the photomask resin residue in fairlead, the passivating film in the fairlead can be removed fully.
By the present invention, each pixel electrode is a rectangle, and developer flows along the length direction of pixel electrode.Therefore, the mobile relatively facility of developer and steady, the residue of photomask resin can not remain in the fairlead.As a result, can effectively reduce the contact deficiency that causes because of the back photomask resin residue thing that develops or the probability of occurrence of point defect.
Most preferred embodiment of the present invention more than has been described, but the people that are familiar with this gate technique can understand, under the scope and main idea of the claim that does not exceed the present invention and declared, the present invention is made increase and decrease and revises is possible.Therefore, above-mentioned explanation and accompanying drawing only have the meaning that illustrates, and it can not be considered as limitation of the present invention, and increase and decrease and the modification that may make should be considered as at this
Within the scope of invention.
Claims (15)
1, a kind of manufacture method of LCD, described LCD comprises: the sweep trace of many configured in parallel; The data line of vertical, the mutual configured in parallel of many and described sweep trace; Near many thin film transistor (TFT)s of every described sweep trace and data line intersection that are configured in; And many pixel electrodes that are configured to a formation, link to each other with described thin film transistor (TFT).Described manufacture method comprises:
Form one deck photomask, the formation position of described photomask should cover the zone that comprises described thin film transistor (TFT) at least, but described photomask hinders when graphical except the dykes and dams zone that developer flows.
2, LCD manufacture method according to claim 1, wherein said when forming photomask, described photomask also covers described data line.
3, as LCD manufacture method as described in the claim 2, wherein said when forming photomask, described photomask also part covers described sweep trace, but is in except the sweep trace part between adjacent data line.
4, LCD manufacture method according to claim 1, wherein said when forming photomask, described photomask also covers sweep trace.
5, as LCD manufacture method as described in the claim 4, wherein said when forming photomask, described photomask also part covers described data line, but is in except the data line part between adjacent scanning lines.
6, LCD manufacture method according to claim 1, wherein said LCD comprise the fairlead that is disposed in described sweep trace and the data line institute enclosing region; Described when forming photomask, described photomask is not formed on desire and forms described fairlead and hinder the dykes and dams district that described developer flows.
7, LCD manufacture method according to claim 1, wherein said when forming photomask, described developer flows along the length direction of described pixel electrode.
8, as LCD manufacture method as described in the claim 7, wherein said pixel electrode forms rectangle.
9, a kind of LCD comprises:
The sweep trace of many configured in parallel;
The data line of vertical, the mutual configured in parallel of many and described sweep trace;
Near many thin film transistor (TFT)s of every described sweep trace and data line intersection that are configured in;
Many pixel electrodes that are configured to a formation, link to each other with described thin film transistor (TFT); And
One deck photomask, described photomask covers described thin film transistor (TFT) at least, is not in the described sweep trace between the described data line and is in described data line between the described sweep trace but do not cover.
10, as LCD as described in the claim 9, wherein said photomask also covers described data line.
11, as LCD as described in the claim 10, wherein said photomask also part covers described sweep trace, but is in except the sweep trace between the adjacent data line.
12, as LCD as described in the claim 9, wherein said photomask also covers described sweep trace.
13, as LCD as described in the claim 12, wherein said when forming photomask, described photomask also part covers described data line, but is in except the data line between the adjacent scanning lines.
14, as LCD as described in the claim 9, wherein said LCD is included in the fairlead that forms in described sweep trace and the data line institute enclosing region.
15, as LCD as described in the claim 9, wherein said pixel electrode is its length direction and the consistent rectangle of described data line direction, and described photomask does not cover the sweep trace part that is between the adjacent data line.
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| CN 02127598 CN1209661C (en) | 2002-08-02 | 2002-08-02 | Thin film transistor style LCD with color filter for reducing spot defects |
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| CN 02127598 CN1209661C (en) | 2002-08-02 | 2002-08-02 | Thin film transistor style LCD with color filter for reducing spot defects |
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