CN1196030C - 用于光致抗蚀剂组合物的抗反射涂料 - Google Patents
用于光致抗蚀剂组合物的抗反射涂料 Download PDFInfo
- Publication number
- CN1196030C CN1196030C CNB008111677A CN00811167A CN1196030C CN 1196030 C CN1196030 C CN 1196030C CN B008111677 A CNB008111677 A CN B008111677A CN 00811167 A CN00811167 A CN 00811167A CN 1196030 C CN1196030 C CN 1196030C
- Authority
- CN
- China
- Prior art keywords
- alkyl
- coating composition
- alkoxy
- group
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 52
- 239000006117 anti-reflective coating Substances 0.000 title abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000004132 cross linking Methods 0.000 claims abstract description 7
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 66
- 239000000126 substance Substances 0.000 claims description 65
- 239000011248 coating agent Substances 0.000 claims description 50
- 238000000576 coating method Methods 0.000 claims description 50
- 239000000243 solution Substances 0.000 claims description 41
- 239000000178 monomer Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 33
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 claims description 30
- 239000000975 dye Substances 0.000 claims description 29
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 28
- 125000000217 alkyl group Chemical group 0.000 claims description 27
- 125000003118 aryl group Chemical group 0.000 claims description 27
- 239000008199 coating composition Substances 0.000 claims description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 23
- -1 dicyano vinyl Chemical group 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 16
- 229910052717 sulfur Inorganic materials 0.000 claims description 16
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 14
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 14
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 13
- 229910052736 halogen Inorganic materials 0.000 claims description 13
- 150000002367 halogens Chemical class 0.000 claims description 13
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229940116333 ethyl lactate Drugs 0.000 claims description 12
- 125000002769 thiazolinyl group Chemical group 0.000 claims description 12
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 11
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 229920002554 vinyl polymer Polymers 0.000 claims description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 claims description 8
- 125000004122 cyclic group Chemical group 0.000 claims description 8
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 8
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 8
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical group COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 7
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 6
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000007725 thermal activation Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001455 metallic ions Chemical class 0.000 claims description 3
- 229920003986 novolac Polymers 0.000 claims description 3
- 150000003254 radicals Chemical class 0.000 claims description 3
- 125000002348 vinylic group Chemical group 0.000 claims description 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 2
- 150000008065 acid anhydrides Chemical class 0.000 claims description 2
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 239000003112 inhibitor Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- VAVZHSBOROHMQD-UHFFFAOYSA-N n-(3-hydroxyphenyl)-2-methylprop-2-enamide Chemical compound CC(=C)C(=O)NC1=CC=CC(O)=C1 VAVZHSBOROHMQD-UHFFFAOYSA-N 0.000 claims description 2
- 150000002989 phenols Chemical class 0.000 claims description 2
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 claims 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- 125000001118 alkylidene group Chemical group 0.000 claims 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 150000002170 ethers Chemical class 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 20
- 230000008569 process Effects 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 125000000524 functional group Chemical group 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000003973 paint Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- APNSGVMLAYLYCT-UHFFFAOYSA-N isobutyl nitrite Chemical compound CC(C)CON=O APNSGVMLAYLYCT-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000007766 curtain coating Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- BLFLLBZGZJTVJG-UHFFFAOYSA-N benzocaine Chemical compound CCOC(=O)C1=CC=C(N)C=C1 BLFLLBZGZJTVJG-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 229920001519 homopolymer Polymers 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 239000002671 adjuvant Substances 0.000 description 2
- 230000003042 antagnostic effect Effects 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- 229960005274 benzocaine Drugs 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- VFLDPWHFBUODDF-FCXRPNKRSA-N curcumin Chemical compound C1=C(O)C(OC)=CC(\C=C\C(=O)CC(=O)\C=C\C=2C=C(OC)C(O)=CC=2)=C1 VFLDPWHFBUODDF-FCXRPNKRSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 150000008442 polyphenolic compounds Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- UWQPDVZUOZVCBH-UHFFFAOYSA-N 2-diazonio-4-oxo-3h-naphthalen-1-olate Chemical class C1=CC=C2C(=O)C(=[N+]=[N-])CC(=O)C2=C1 UWQPDVZUOZVCBH-UHFFFAOYSA-N 0.000 description 1
- XBIPWOJKRZBTQK-UHFFFAOYSA-N 2-methylidenebut-3-enamide Chemical compound NC(=O)C(=C)C=C XBIPWOJKRZBTQK-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- PQMOXTJVIYEOQL-UHFFFAOYSA-N Cumarin Natural products CC(C)=CCC1=C(O)C(C(=O)C(C)CC)=C(O)C2=C1OC(=O)C=C2CCC PQMOXTJVIYEOQL-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- FSOGIJPGPZWNGO-UHFFFAOYSA-N Meomammein Natural products CCC(C)C(=O)C1=C(O)C(CC=C(C)C)=C(O)C2=C1OC(=O)C=C2CCC FSOGIJPGPZWNGO-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229960001413 acetanilide Drugs 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229920001585 atactic polymer Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005341 cation exchange Methods 0.000 description 1
- JBTHDAVBDKKSRW-UHFFFAOYSA-N chembl1552233 Chemical compound CC1=CC(C)=CC=C1N=NC1=C(O)C=CC2=CC=CC=C12 JBTHDAVBDKKSRW-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- 239000004148 curcumin Substances 0.000 description 1
- 229940109262 curcumin Drugs 0.000 description 1
- 235000012754 curcumin Nutrition 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- VFLDPWHFBUODDF-UHFFFAOYSA-N diferuloylmethane Natural products C1=C(O)C(OC)=CC(C=CC(=O)CC(=O)C=CC=2C=C(OC)C(O)=CC=2)=C1 VFLDPWHFBUODDF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- JUINSXZKUKVTMD-UHFFFAOYSA-N hydrogen azide Chemical compound N=[N+]=[N-] JUINSXZKUKVTMD-UHFFFAOYSA-N 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000012690 ionic polymerization Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- FZERHIULMFGESH-UHFFFAOYSA-N methylenecarboxanilide Natural products CC(=O)NC1=CC=CC=C1 FZERHIULMFGESH-UHFFFAOYSA-N 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920005547 polycyclic aromatic hydrocarbon Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000006462 rearrangement reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
- G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
- G03C1/835—Macromolecular substances therefor, e.g. mordants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
聚合物# | AAP摩尔% | ECP摩尔% | MEAA摩尔% | MMA(摩尔%) | GPC(Mw) | λmax(nm) | ε(L/g.cm) |
2345678 | 10070 | 10075603430 | 256640 | 304030 | 13,10040,3576,47944,19632,00019,02442,092 | 389356389356356356356 | 59604952532831 |
实施例 | 聚合物 | 溶剂 | T1(A) | T2(A) |
1011121314 | 11345 | PGMEAELPGMEAPGMEAPGMEA | 748740801723776 | 747743798723769 |
底涂层 | DTP(mj/cm2) | 分辨率(μm) | 驻波 |
实施例10实施例12实施例13实施例14无 | 175180175175170 | 0.281.0.282.0.303.0.304.0.38 | 消除消除消除消除严重 |
底涂层 | %摆动减小 |
无实施例10实施例13实施例14 | 0887585 |
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/368,740 | 1999-08-05 | ||
US09/368,740 US6187506B1 (en) | 1999-08-05 | 1999-08-05 | Antireflective coating for photoresist compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1367884A CN1367884A (zh) | 2002-09-04 |
CN1196030C true CN1196030C (zh) | 2005-04-06 |
Family
ID=23452540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008111677A Expired - Lifetime CN1196030C (zh) | 1999-08-05 | 2000-07-27 | 用于光致抗蚀剂组合物的抗反射涂料 |
Country Status (11)
Country | Link |
---|---|
US (1) | US6187506B1 (zh) |
EP (1) | EP1210651B1 (zh) |
JP (1) | JP4714394B2 (zh) |
KR (1) | KR100694777B1 (zh) |
CN (1) | CN1196030C (zh) |
AT (1) | ATE424574T1 (zh) |
DE (1) | DE60041704D1 (zh) |
HK (1) | HK1048367A1 (zh) |
MY (1) | MY126933A (zh) |
TW (1) | TWI281941B (zh) |
WO (1) | WO2001011429A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101727003B (zh) * | 2008-10-24 | 2012-07-18 | 第一毛织株式会社 | 用于彩色滤光片的光敏树脂组合物以及使用其制备的彩色滤光片 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100687850B1 (ko) * | 2000-06-30 | 2007-02-27 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
US7070914B2 (en) | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
US6844131B2 (en) | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
US6894104B2 (en) | 2002-05-23 | 2005-05-17 | Brewer Science Inc. | Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers |
US6733936B1 (en) | 2002-09-19 | 2004-05-11 | Integrated Device Technology, Inc. | Method for generating a swing curve and photoresist feature formed using swing curve |
US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
US7691556B2 (en) * | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US20060057501A1 (en) * | 2004-09-15 | 2006-03-16 | Hengpeng Wu | Antireflective compositions for photoresists |
US20060177772A1 (en) * | 2005-02-10 | 2006-08-10 | Abdallah David J | Process of imaging a photoresist with multiple antireflective coatings |
US7238624B2 (en) * | 2005-03-01 | 2007-07-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for manufacturing semiconductor devices using a vacuum chamber |
US7807230B2 (en) * | 2005-06-16 | 2010-10-05 | Rensselaer Polytechnic Institute | Curcumin and curcuminoid compounds, and use thereof as photosensitizers of onium salts |
US7375172B2 (en) | 2005-07-06 | 2008-05-20 | International Business Machines Corporation | Underlayer compositions containing heterocyclic aromatic structures |
US7553905B2 (en) * | 2005-10-31 | 2009-06-30 | Az Electronic Materials Usa Corp. | Anti-reflective coatings |
US7736822B2 (en) * | 2006-02-13 | 2010-06-15 | Hoya Corporation | Resist underlayer coating forming composition for mask blank, mask blank and mask |
US7416834B2 (en) * | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
KR100886314B1 (ko) * | 2007-06-25 | 2009-03-04 | 금호석유화학 주식회사 | 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물 |
US20090042133A1 (en) * | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
US8088548B2 (en) * | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
JP2010237665A (ja) * | 2009-03-12 | 2010-10-21 | Sumitomo Chemical Co Ltd | レジストパターンの製造方法 |
US8632948B2 (en) * | 2009-09-30 | 2014-01-21 | Az Electronic Materials Usa Corp. | Positive-working photoimageable bottom antireflective coating |
US8623589B2 (en) | 2011-06-06 | 2014-01-07 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions and processes thereof |
KR102255221B1 (ko) * | 2013-12-27 | 2021-05-24 | 롬엔드하스전자재료코리아유한회사 | 나노리소그래피용 유기 바닥 반사방지 코팅 조성물 |
CN113913075B (zh) * | 2021-10-25 | 2022-09-20 | 嘉庚创新实验室 | 一种抗反射涂层组合物及可交联聚合物 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3817012A1 (de) | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
DE69125634T2 (de) | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
US5525457A (en) | 1994-12-09 | 1996-06-11 | Japan Synthetic Rubber Co., Ltd. | Reflection preventing film and process for forming resist pattern using the same |
JP2956824B2 (ja) * | 1995-06-15 | 1999-10-04 | 東京応化工業株式会社 | ポジ型レジスト膜形成用塗布液 |
US5693691A (en) * | 1995-08-21 | 1997-12-02 | Brewer Science, Inc. | Thermosetting anti-reflective coatings compositions |
JP3587413B2 (ja) * | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
US5652297A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Aqueous antireflective coatings for photoresist compositions |
US5652317A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
JP3679205B2 (ja) * | 1996-09-20 | 2005-08-03 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
TW464791B (en) * | 1996-09-30 | 2001-11-21 | Hoechst Celanese Corp | Bottom antireflective coatings containing an arylhydrazo dye |
US5733714A (en) * | 1996-09-30 | 1998-03-31 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
US5994430A (en) * | 1997-04-30 | 1999-11-30 | Clariant Finance Bvi) Limited | Antireflective coating compositions for photoresist compositions and use thereof |
KR100236840B1 (ko) * | 1997-10-16 | 2000-01-15 | 유현식 | 가교형 광산발생제를 함유하는 포토레지스트 조성물 |
KR100240825B1 (ko) * | 1997-12-05 | 2000-01-15 | 유현식 | 비오니움 광산 발생제 및 이를 함유한 포토레지스트 조성물 |
-
1999
- 1999-08-05 US US09/368,740 patent/US6187506B1/en not_active Expired - Lifetime
-
2000
- 2000-07-19 TW TW089114404A patent/TWI281941B/zh not_active IP Right Cessation
- 2000-07-27 CN CNB008111677A patent/CN1196030C/zh not_active Expired - Lifetime
- 2000-07-27 DE DE60041704T patent/DE60041704D1/de not_active Expired - Lifetime
- 2000-07-27 AT AT00948003T patent/ATE424574T1/de not_active IP Right Cessation
- 2000-07-27 WO PCT/EP2000/007228 patent/WO2001011429A1/en active Application Filing
- 2000-07-27 JP JP2001516024A patent/JP4714394B2/ja not_active Expired - Lifetime
- 2000-07-27 EP EP00948003A patent/EP1210651B1/en not_active Expired - Lifetime
- 2000-07-27 KR KR1020027001515A patent/KR100694777B1/ko active IP Right Grant
- 2000-08-03 MY MYPI20003536 patent/MY126933A/en unknown
-
2003
- 2003-01-23 HK HK03100567.0A patent/HK1048367A1/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101727003B (zh) * | 2008-10-24 | 2012-07-18 | 第一毛织株式会社 | 用于彩色滤光片的光敏树脂组合物以及使用其制备的彩色滤光片 |
US8486591B2 (en) | 2008-10-24 | 2013-07-16 | Cheil Industries Inc. | Photosensitive resin composition for color filter and color filter prepared using the same |
Also Published As
Publication number | Publication date |
---|---|
JP2003506568A (ja) | 2003-02-18 |
EP1210651A1 (en) | 2002-06-05 |
CN1367884A (zh) | 2002-09-04 |
MY126933A (en) | 2006-11-30 |
TWI281941B (en) | 2007-06-01 |
KR20020071839A (ko) | 2002-09-13 |
ATE424574T1 (de) | 2009-03-15 |
WO2001011429A1 (en) | 2001-02-15 |
JP4714394B2 (ja) | 2011-06-29 |
KR100694777B1 (ko) | 2007-03-14 |
US6187506B1 (en) | 2001-02-13 |
EP1210651B1 (en) | 2009-03-04 |
DE60041704D1 (de) | 2009-04-16 |
HK1048367A1 (zh) | 2003-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1196030C (zh) | 用于光致抗蚀剂组合物的抗反射涂料 | |
CN1111760C (zh) | 用于光致抗蚀剂组合物的抗反射涂层 | |
CN1148609C (zh) | 感光树脂组合物用抗反射涂料 | |
JP5021984B2 (ja) | 反射防止ハードマスク組成物 | |
US6855466B2 (en) | Planarizing antireflective coating compositions | |
CN1257435C (zh) | 形成光刻用防反射膜的组合物 | |
CN1160599C (zh) | 吸光聚合物 | |
CN1159627C (zh) | 用于光刻胶组合物的抗反射涂料组合物及光刻胶成像方法 | |
CN1514956A (zh) | 厚膜型光致抗蚀剂及其使用方法 | |
CN1900824A (zh) | 与外涂光刻胶一起使用的涂料组合物 | |
CN1550889A (zh) | 多层光致抗蚀剂*** | |
KR20010023776A (ko) | 저면 반사 방지막용 조성물 및 이에 사용하기 위한 신규중합체 염료 | |
CN1542546A (zh) | 多层光致抗蚀剂*** | |
CN1774673A (zh) | 多孔质下层膜和用于形成多孔质下层膜的形成下层膜的组合物 | |
CN1668982A (zh) | 形成防反射膜的组合物 | |
CN1871550A (zh) | 低活化能含硅抗蚀剂体系 | |
JP5418906B2 (ja) | 反射防止コーティング組成物 | |
CN1732410A (zh) | 碱溶解型光刻用形成填隙材料的组合物 | |
CN1181397C (zh) | 含芳基联亚氨基染料的抗反射底涂料及其形成影像的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS JAPAN Free format text: FORMER OWNER: CLARIANT FINANCE (BVI) LTD. Effective date: 20050520 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20050520 Address after: Tokyo, Japan Patentee after: AZ Electronic Materials Japan Co., Ltd. Address before: The British Virgin Islands of Tortola Patentee before: Clariant Finance (BVI) Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS IP CO., LTD. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS JAPAN CO., LTD. Effective date: 20120926 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120926 Address after: Tokyo, Japan Patentee after: AZ Electronic Materials IP Co., Ltd. Address before: Tokyo, Japan Patentee before: AZ Electronic Materials Japan Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP CO., LTD. Effective date: 20150414 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150414 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan Patentee before: AZ Electronic Materials IP Co., Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20050406 |