CN1192484A - Plasma CVD device - Google Patents
Plasma CVD device Download PDFInfo
- Publication number
- CN1192484A CN1192484A CN97125292A CN97125292A CN1192484A CN 1192484 A CN1192484 A CN 1192484A CN 97125292 A CN97125292 A CN 97125292A CN 97125292 A CN97125292 A CN 97125292A CN 1192484 A CN1192484 A CN 1192484A
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- reaction compartment
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- plasma
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- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 20
- 238000004891 communication Methods 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000004744 fabric Substances 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 238000007872 degassing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000000411 inducer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The apparatus for a plasma CVD process includes a housing with a number of reaction chambers capable of accommodating a workpiece. Electrodes are located in reaction chambers, and can carry workpieces. The apparatus further includes means for creating vacuum the reaction chambers and for providing them with reaction gases. A high-frequency current source is connected to the electrodes, and serves for production of plasma in the reaction chambers. The apparatus is characterised by the presence of a duct in the housing connecting the reaction chambers with one another. This connector duct is sufficiently large to allow plasma propagation.
Description
The present invention relates to a kind of plasma activated chemical vapour deposition (CVD) device that is used on workpiece, forming thin film layer.
Recently, people pay close attention to plasma CVD more; Promptly can for example under the room temperature, use the chemical gaseous phase depositing process of plasma body to form film at a lower temperature.Japan publication document No.311448/1993 has disclosed the device of implementing the plasma activated chemical vapour deposition method.In this device, make the internal space in the vacuum chamber be divided into several parts with wire cloth.The little space of each that is divided (compartment) is that wall and the wire cloth by vacuum vessel surrounds, and constitutes reaction compartment.Vacuum vessel and wire cloth be ground connection suitably.All insert a plate electrode in each reaction compartment respectively.All electrodes all are connected by impedance matching circuit and high frequency electric source.All place a workpiece on the upper surface of each electrode.Because the effect of the high-frequency electric field that produces between the wall (the just wall of vacuum vessel and wire cloth) of each reaction compartment of formation and the electrode makes the reactant gases plasma that fills in each reaction compartment.Because the effect of above-mentioned high-frequency electric field makes the negatively charged ion of all plasma bodys or electronics carry out dynamic motion.Consequently, reactant gas partly decomposes, and forms free radical.Because the bias capability of impedance matching circuit the positively charged ion of all plasma bodys is moved on the workpiece, and above-mentioned free radical is also followed positively charged ion, moves on the same direction.Consequently, on workpiece surface, form film.
In the device that above-mentioned Japanese publication document No.311448/1993 is disclosed, each workpiece is contained in respectively in each narrow reaction compartment that separates, and forms plasma body in each reaction compartment respectively, makes film forming on the workpiece surface respectively.Therefore, with respect to the device of in a big space, handling a plurality of workpiece simultaneously, it have can conserve energy advantage.
Yet, in the described device of above-mentioned Japanese publication document No.311448/1993, sometimes, do not form plasma body in some reaction compartment therein, therefore, be placed on the surface of the workpiece in these compartments and can not form film.In addition, all reaction compartment can not side by side form plasma body sometimes.Therefore, when high frequency electric source cuts off at the same time, form on the workpiece in the reaction compartment of plasma body that film forming thickness is inequality on the workpiece in the film forming thickness and the reaction compartment that early forms plasma body evening.Consequently, can not make and all form uniform film on each workpiece surface.Should be noted that the wire cloth that space in the vacuum vessel is divided into several reaction compartment can make air pass through, but stop the propagation of plasma body.
The present patent application people once disclosed the device that is similar to apparatus of the present invention in Fig. 7 and 8 of German patent application DE 19602634A1 (corresponding to U.S. Patent application No.08/590471).Wherein, the passage that several reaction compartment are interconnected is to make the evacuated vacuum tunnel of each compartment, yet this passage is too narrow, is not enough to the propagation of plasma gas.
The purpose of this invention is to provide a kind of plasma CVD equipment, this device can make on several simultaneously processed workpiece surface energy-conservationly, and each all forms the film of uniform thickness.
Theme of the present invention is exactly a plasma CVD equipment, be connected by a communication passage between several reaction compartment wherein, and the size of this communication passage foot is in plasma body is propagated.Specifically, the casing of a ground connection comprises a base part and a plurality of enclosure parts that can be located at above the base part.The internal space of base part has constituted connected space, and the internal space of each enclosure part has constituted reaction compartment.Each electrode of connecting high frequency electric source all extends in each reaction compartment by connected space.In connected space, each electrode surface is all being wrapped up in the conductive protection cover.
Below in conjunction with accompanying drawing in detail the preferred embodiments of the present invention are described in detail.In the accompanying drawing:
Fig. 1 represents according to one embodiment of present invention, is used for the longitudinal profile view of film forming plasma CVD equipment on cylindric workpiece;
Fig. 2 is a section plan along II-II line among Fig. 1.
Fig. 1 and 2 has described a plasma CVD equipment according to one embodiment of the invention.This plasma CVD device be used on general cylindric workpiece W film forming.This workpiece W can be a conductor, or non-conductor.The lower surface W of workpiece W
1Be to contact (details aftermentioned) the periphery surface W of workpiece W with an electrode 5 as a surface in contact
2With upper surface W
3All be with film forming surface in the above.
Said apparatus comprises that 1, one of a vacuum vessel is contained in the casing 2 in the vacuum vessel 1, and is installed in several electrodes 5 in the casing 2.A vacuum pump 3 is connected with above-mentioned vacuum vessel 1.This casing 2 all is made of copper or stainless conductor material with electrode 5.This casing 2 comprises the base parts 10 of the hollow of a flat disk, the enclosure assembly 20 that removably is connected with a upper surface of base parts 10 with a tool.
Above-mentioned base parts 10 comprise a discous upper wall 11 of level (first wall), a discous lower wall 12 of level (second wall), and the interconnective cylinder periphery wall 13 of the periphery edge with upper wall 11 and lower wall 12.The internal space 15 of these base parts 10 has constituted the part with important feature of the present invention, i.e. connected space.Four perforate 11a are arranged in upper wall 11, and the center of above-mentioned four perforate 11a and base parts 10 all is to have equidistant interval, and is circumferentially uniformly-spaced arranging each other.On the upper surface of upper wall 11, fix one and connected cushion cover 16, the periphery edge flush setting-in of the latter and perforate 11a.The degassing form 17 (range estimation window) that is made of some little perforation is positioned near the perforate 11a, and is located on the peripheral wall 13.Each degassing form 17 all is made of transparent material on the corresponding position of vacuum vessel 1, and is as range estimation window (not shown).
Make web plate 24 ground connection of casing 2.Like this, making the electromotive force of casing 2 is zero.
Four gas inlet pipe connectings 26 are connected with the upper end of web plate 24 with enclosure parts 21 respectively.By the pipeline 6 that penetrates vacuum vessel 1, gas inlet pipe connecting 26 is linked to each other with a bomb 7 (air feeder).
Contact with the bottom end surface of the lower wall 12 of base parts 10 by 30, one conducting platess 31 of an insulcrete.On the upper end face of conducting plates 31, erect respectively and fixed four electrodes 5.The diameter of this electrode 5 is identical with the diameter of workpiece W, and has cylindric configuration, and they are respectively by the hole 12a in lower wall 12 and insulcrete 30, and 30a extend into the inside of casing 2.That is to say that each electrode 5 passes connected space 15 respectively and extends upward, make electrode 5 the upper end towards the reaction 25 spatial inside.Each electrode 5 all is an electrical isolation with lower wall 12 and casing 2.
Each has cylindric configuration, and vertically upward erects with the conductive protection cover that the periphery edge of each hole 12a coincide and to be installed on the upper surface of lower wall 12.This protecting jacket 35 centers on electrode 5 in connected space 15.The upper end of each protecting jacket 35 upwards surpasses connection cushion cover 16 positions that are positioned at reaction 25 spaces respectively slightly.The position, upper end of each electrode 5 is upward through respectively and connects cushion cover 16, enters in the reaction compartment 25.Each protecting jacket 35 all with each electrode 5 segment distance of radially being separated by, and with electrode 5 electrical isolations.Above-mentioned each electrode 5, the sleeve 22 of protecting jacket 35 and enclosure parts 21 such as all have respectively at axis.
Conducting plates 31 links to each other with high frequency electric source 41 by an impedance matching circuit 40 (bias current device).By an inducer 42 voltmeter 43 is linked to each other with conducting plates 31, so that detect the center electromotive force of conducting plates 31 and electrode 5.The proofing unit of inducer 42 and voltmeter 43 common formation center electromotive forces.
Explanation now forms the method for amorphous carbon film by using the device that constitutes thus on workpiece W.
At first, enclosure subassembly 20 is removed from base parts 10, each workpiece W is placed on respectively exactly on each upper end face of four electrodes 5.For workpiece W is placed on the electrode 5 exactly, the rear surface W of workpiece W
1Superimposed tightly with the upper end face of electrode 5.Consequently, the periphery surface W of each workpiece W
2Align respectively with the periphery surface of each electrode 5.
After workpiece W such as above-mentioned being connected and installed, enclosure assembly 20 is mounted on above the base parts 10.At this moment, the sleeve 22 of each enclosure parts 21 is in the face of the periphery surface W of each workpiece W
2, and the periphery surface W of the whole periphery of this sleeve 22 and workpiece W
2All keep equidistant intervals respectively abreast.
After enclosure subassembly 20 is connected and installed, close vacuum vessel 1, start vacuum pump 3, and from bomb 7 the transport of reactant gases body.By gas inlet pipe connecting 26, reactant gases is sent in the reaction compartment 25 of enclosure parts 21.Then, by connected space 15, reactant gases is sent into the vacuum vessel 1 from degassing form 17.At this moment, by impedance matching circuit 40 and conducting plates 31, the high-frequency current of high frequency electric source 41 is transported to electrode 5.
Portion gas in the reaction compartment 25 is by the high-frequency current plasma bodyization.At first, negatively charged ion or the electronics that is formed by high-frequency electric field arrives casing 2, electrode 5 and workpiece W.The electronics that arrives casing 2 is overflowed because of ground connection, and the electronics that arrives workpiece W and electrode 5 then accumulates in the electric capacity of impedance matching circuit 41 by conducting plates 31.Consequently, the center potential level of workpiece W and electrode 5 reaches negative potential, and attracts positively charged ion (automatic biasing), details aftermentioned.The potential level of workpiece W reaches the constant negative potential, and tends towards stability.
Because near center (on average) potential level workpiece W and electrode 5 is lower than a negative threshold value of being scheduled to, and therefore, can not form plasma body.Similarly, because the electromotive force of casing 2 is ground potentials, therefore, near casing 2, can not form plasma gas yet.The above-mentioned zone that does not form plasma gas is called as " plasma shield zone (plasma sheath area) ".
The part except above-mentioned plasma shield zone in reaction compartment 25 has formed plasma body.Similarly, the dynamic motion owing to electronics in plasma body partly decomposes gas, forms free radical.
Because near the gradient of the potential level that forms workpiece W makes the positively charged ion of plasma body shift to workpiece W, and striking work W finally.At this moment, free radical and anionic current are also shifted to workpiece W to consistent, and striking work W.Since the collision of positively charged ion and free radical, the W that makes at workpiece W
2, W
3Form film on the surface.
As mentioned above, by high frequency electric source is transported in four less reaction compartments 25 in a concentrated manner, and limit plasma body therein, on workpiece W, constitute film.So just can be implemented as membrane process, thereby improve productivity with power consumption still less.Because all workpiece W put into each enclosure parts 21 with identical configuration respectively, and under the identical operations condition film forming, therefore, can reduce the thickness offset and the adhesion strength ununiformity that are formed on the lip-deep film of workpiece W.
In embodiments of the invention, because the jacket casing 22 of casing 2 all is equidistantly towards the periphery surface W of workpiece W
2, and bowl cover 23 also is the upper end face W towards workpiece W
3, therefore, at W
2With W
3The film that forms on the surface is not only thick, and its adhesion strength also strengthens to some extent.In addition, at periphery surface W
2The thickness of the film of last formation all is identical on its circumferential direction.
At initial stage carrying high-frequency current, in some reaction compartment 25, do not form plasma body sometimes.In this case, formed the plasma flow of the reaction compartment 25 of plasma body, can not form as yet in the reaction compartment 25 of plasma body by connected space 15 flow directions.
The reaction compartment 25 that does not form plasma body is as yet received after the plasma body from connected space 15, just can be brought out forming plasma body (propagation of plasma discharge).Consequently, cause in all reaction compartments 25, all forming plasma body, thereby can guarantee on the surface of all workpiece W, all to form film.Owing to almost side by side in all reaction compartments 25, form plasma body, therefore, can further reduce the thickness offset and the adhesion strength ununiformity that are formed on the lip-deep film of workpiece W.
Operator can be lower than predetermined negative potential level through the center electromotive force of confirming conducting plates 31 by monitor voltage table 43.Formation with the plasma body of identification in all reaction compartments 25.Its reason is, if formed plasma body at least one reaction compartment 25, the center electromotive force of conducting plates 31 is reduced to the level of predetermined negative potential, and because the effect of connected space 15, can guarantee to cause in all reaction compartments 25, all forming plasma body at a reaction compartment 25 formed plasma bodys.By some range estimation forms on vacuum vessel 1, and the degassing form 17 of the base parts 10 of casing 2, can directly observe the existence of the plasma body in communication passage 15, thereby recognize the formation of the plasma body in all reaction compartments 25.
As mentioned above, though plasma body also is present in the connected space 15,, therefore, can avoids on the surface of electrode 5, forming film, thereby avoid the loss of electric power because each electrode 5 in connected space 15 is all wrapped up by protecting jacket 35 respectively.
Test about the film that forms with said apparatus is described in detail in detail below.In test, the 10mm diameter, the cutting tool of the high speed steel of 30mm length is as workpiece W.The periphery surface W of each workpiece W
2And the distance between each sleeve 22 is 35mm, and the height of connected space 15 is chosen as 5mm respectively, 10mm and 30mm.
Other condition is as described below: first step:
Unstripped gas: CH
4+ N
2+ TMS (tetramethylsilane)
Gaseous tension: 8.67 handkerchiefs
Power input: 100W (13.56MHz)
Specific gas flow rate: CH
4: 2.4sccm, N
2: 4sccm, TMS:1.6sccm
Film formation time: 55 minutes second steps:
Unstripped gas: CH
4
Gaseous tension: 8 handkerchiefs
Power input: 170W (13.56MHz)
Specific gas flow rate: CH
4: 4sccm.
Film formation time: 45 minutes
Wherein above-mentioned sccm represents standard cubic centimeters per minute.
When the height of connected space 15 is 10mm, through above-mentioned test, at the periphery surface W of each workpiece W
2The thickness of going up formed film is 8.5 μ m, and at periphery surface W
2The film thickness in whole zone be uniform.
When the height of connected space 15 is 5mm, there is not the discharge of plasma body to propagate.
When the height of connected space 15 is 30mm, though formed film thickness is uniformly, have only 7.5 μ m, its film forming efficiency is not as the situation when the height of connected space 15 is 10mm.
In this test, near the thickness in each plasma shield district the upper wall 11 of the base parts 10 of casing 2 and lower wall 12 is 4.5mm, and promptly the total thickness in plasma shield district is 9.0mm.
By above-mentioned test-results as can be seen, if the height of connected space 15 is less than the total thickness in plasma shield district, at this moment just there is not the propagation of plasma discharge, therefore can not reach effect of the present invention, if the height of connected space 15 during greater than the value of necessity, then can form the waste of electric power.That is to say that the height that preferably makes communication passage 15 is slightly greater than the total thickness in plasma shield district.
As mentioned above, the height of connected space 15 is that the device of 5mm does not belong to according to plasma CVD equipment of the present invention.
As mentioned above, connected space 15 (being communication passage) should be enough big so that the propagation of plasma physical efficiency.In other words, when the internal surface along connected space 15 has formed the plasma shield district, be necessary to exist the plasma body propagation regions of being surrounded by this plasma body shielding area.
Similarly, the perforate 11a that forms in upper wall 11 also needs the big plasma body propagation that must be enough to make.
The foregoing description is not construed as limiting the invention, and can make some on this basis and change and improvement, and for example, the cross section of the workpiece of desire processing can constitute rectangle.In this case, the cross section of each enclosure parts constitutes rectangle similarly, and the cross section of each protecting jacket constitutes rectangle similarly.
Aspect the formation of confirming plasma body, also can use the voltage comparator that the center electromotive force of negative threshold value and conducting plates 31 (electrode 5 with workpiece W center electromotive force) is compared, replace voltmeter, so that when central electrocardio gesture was lower than threshold value, available indicating unit as signal lamp or hummer was pointed out the formation of plasma body.
Also can cancel conducting plates 31, in this case, can be each electrode an impedance matching circuit and high frequency electric source are provided.
In the above-described embodiments,, also can from casing, provide ground-electrode respectively, and be inserted in each reaction compartment, make ground-electrode face corresponding electrode in high frequency electric source one side though this casing is as ground-electrode.
In the above-described embodiments, also can in casing, be provided with a plurality of connected spaces, so that each connected space only is interconnected with corresponding reaction compartment.
Being used for defined reaction spatial enclosure parts can arrange with matrix pattern or line style pattern.
Claims (3)
1. plasma CVD device comprises:
(a) casing (2), it has a plurality of reaction compartments (25) that are defined within the described casing (2), and each described reaction compartment (25) is used for putting a workpiece (W);
(b) a plurality of electrodes (5) that are respectively charged in the described reaction compartment, each electrode (5) supports described workpiece respectively;
(c) be used to vacuum extractor (3) that described reaction compartment is vacuumized;
(d) be used for gas supply device (17) to each reaction compartment transport of reactant gases body; And
(e) high frequency electric source that links to each other with described electrode (41), this power supply is carried high-frequency current to each electrode, so that in reaction compartment, form plasma body,
It is characterized in that it also comprises:
(f) communication passage (15) that in described casing (2), forms, it is used to make each described reaction compartment (25) to be interconnected, and described communication passage is enough big so that the plasma body propagation.
2. plasma CVD device according to claim 1, wherein said communication passage comprise a connected space (15) that forms in casing (2), and apart described reaction compartment (25) is interconnected.
3. plasma CVD device according to claim 2, wherein said casing (2) is a ground connection, and the base parts (10) that comprise a hollow and a plurality of this enclosure parts (21) above base parts that are located at, an internal space (15) of described base parts is as described connected space, and the internal space of each enclosure parts (25) are used separately as described reaction compartment, and, the described base parts of described casing comprise and being spaced from each other and opposed first and second wall (11,12), described first wall (11) is used to support enclosure cap assembly (21), by the perforate on described first wall (11a), make between each described reaction compartment (25) and the described connected space (15) and be interconnected, each described electrode (5) passes second wall (12) respectively, by described connected space (15) and described perforate (11a), make the position, an end of described electrode face each reaction compartment (25) respectively, be used for conductive protection cover (35), be fixed on second wall (12) at described connected space (15) the described electrode of parcel (5).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP307215/1996 | 1996-11-01 | ||
| JP30721596A JP3207770B2 (en) | 1996-11-01 | 1996-11-01 | Plasma CVD equipment |
| JP307215/96 | 1996-11-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1192484A true CN1192484A (en) | 1998-09-09 |
| CN1103382C CN1103382C (en) | 2003-03-19 |
Family
ID=17966437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97125292A Expired - Fee Related CN1103382C (en) | 1996-11-01 | 1997-11-01 | Plasma CVD device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3207770B2 (en) |
| KR (1) | KR100251672B1 (en) |
| CN (1) | CN1103382C (en) |
| DE (1) | DE19748278C2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297686C (en) * | 2003-02-17 | 2007-01-31 | 日本碍子株式会社 | A method and system for producing thin films |
| CN100349261C (en) * | 2001-01-22 | 2007-11-14 | 石川岛播磨重工业株式会社 | Method and device for plasma CVD |
| CN101260520B (en) * | 2008-04-29 | 2012-05-23 | 苏州思博露光伏能源科技有限公司 | Flat plate silicon nitride film PECVD deposition system |
| CN101935827B (en) * | 2009-07-01 | 2012-10-10 | 亚洲太阳科技有限公司 | Device and method for precipitating film layer of thin-film solar cell |
| CN107412812A (en) * | 2017-08-31 | 2017-12-01 | 大连大学 | A kind of new plasma discharge apparatus that can handle multiple biological samples simultaneously |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5058511B2 (en) * | 2006-04-28 | 2012-10-24 | キヤノン株式会社 | Deposited film forming equipment |
| DE102008044024A1 (en) * | 2008-11-24 | 2010-05-27 | Robert Bosch Gmbh | Coating method and coating device |
| JP4957746B2 (en) * | 2009-04-13 | 2012-06-20 | 株式会社デンソー | Plasma generator |
| JP7017306B2 (en) * | 2016-11-29 | 2022-02-08 | 株式会社日立ハイテク | Vacuum processing equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2951462B2 (en) * | 1991-12-25 | 1999-09-20 | 日鉱金属株式会社 | Sealing treatment method for gold plated material |
| JP3495488B2 (en) * | 1995-01-27 | 2004-02-09 | 株式会社ボッシュオートモーティブシステム | Plasma CVD equipment |
-
1996
- 1996-11-01 JP JP30721596A patent/JP3207770B2/en not_active Expired - Fee Related
-
1997
- 1997-10-27 KR KR1019970055350A patent/KR100251672B1/en not_active IP Right Cessation
- 1997-10-31 DE DE19748278A patent/DE19748278C2/en not_active Expired - Fee Related
- 1997-11-01 CN CN97125292A patent/CN1103382C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100349261C (en) * | 2001-01-22 | 2007-11-14 | 石川岛播磨重工业株式会社 | Method and device for plasma CVD |
| CN1297686C (en) * | 2003-02-17 | 2007-01-31 | 日本碍子株式会社 | A method and system for producing thin films |
| CN101260520B (en) * | 2008-04-29 | 2012-05-23 | 苏州思博露光伏能源科技有限公司 | Flat plate silicon nitride film PECVD deposition system |
| CN101935827B (en) * | 2009-07-01 | 2012-10-10 | 亚洲太阳科技有限公司 | Device and method for precipitating film layer of thin-film solar cell |
| CN107412812A (en) * | 2017-08-31 | 2017-12-01 | 大连大学 | A kind of new plasma discharge apparatus that can handle multiple biological samples simultaneously |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3207770B2 (en) | 2001-09-10 |
| DE19748278A1 (en) | 1998-05-07 |
| DE19748278C2 (en) | 1998-11-05 |
| KR100251672B1 (en) | 2000-05-01 |
| KR19980041962A (en) | 1998-08-17 |
| CN1103382C (en) | 2003-03-19 |
| JPH10140361A (en) | 1998-05-26 |
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