CN118311037A - Wafer level bump 3D AOI testing - Google Patents
Wafer level bump 3D AOI testing Download PDFInfo
- Publication number
- CN118311037A CN118311037A CN202410422583.0A CN202410422583A CN118311037A CN 118311037 A CN118311037 A CN 118311037A CN 202410422583 A CN202410422583 A CN 202410422583A CN 118311037 A CN118311037 A CN 118311037A
- Authority
- CN
- China
- Prior art keywords
- bump
- angle
- wafer level
- test
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000010998 test method Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a wafer level bump 3D AOI test in the technical field of wafer bump test, which adopts the following method: s1, designing a platform of a machine table into a 360-degree rotary platform so as to rotate an object to be tested to a proper direction and smoothly acquire correct data; s2, designing the light source angle of the machine to be an angle-adjustable light source so as to adjust the angle of incident light, overcome signal shielding and successfully obtain correct data. Because the gold bump is mainly rectangular bump design, the short side of the bump is open, and the long side of the bump is close to other bumps, the layout design and arrangement direction of the bumps are confirmed first, the incident light is emitted from the long side direction of the bump, so that the signal is shielded, and the data cannot be successfully obtained, and the data is wrong.
Description
Technical Field
The invention belongs to the technical field of wafer bump testing, and particularly relates to wafer level bump 3DAOI testing.
Background
The non-contact measurement technology is a technology combining laser or white light projection with a triangulation method, and has wide application in the fields of industrial detection, quality control and the like. By projecting light onto the object to be inspected and observing the angle change of the reflected light, the height difference of the object surface can be calculated, thereby analyzing and judging defects. The advantages of this technique are as follows: the object is not required to be directly contacted, so that the damage to the object is avoided; when high quality sensors and instruments are used, relatively high measurement accuracy can be provided; the irregular surface has strong adaptability, can measure objects with complex shapes, and is suitable for irregular surfaces. But also has drawbacks: the measurement range is limited by the angle of the incident light, and due to the angle problem of the incident light, a part of the area may be shielded, so that data cannot be successfully obtained, and data errors or measurement failures are caused, so that the method may not be applicable to objects with very small pitches. With the development of miniaturization and high integration of electronic products, the inspection of the appearance of a wafer faces new challenges, and the conventional 2D inspection cannot meet the requirements of fine and hidden defect inspection. Compared with 2DAOI test, the 2D image of the wafer is acquired from a single angle by using an area array or linear array camera, and 3DAOI test acquires a 3D stereoscopic image of the wafer by using multiple view angles or structured light and the like. The wafer is small in size, and therefore, the wafer level bump 3DAOI may have the same defects as the above-mentioned non-contact measurement technique.
Disclosure of Invention
Aiming at the situation, in order to overcome the defects of the existing 3DAOI testing technology, the invention provides the following technical scheme: the wafer level bump 3DAOI is tested by the following method:
S1, designing a platform of a machine table into a 360-degree rotary platform so as to rotate an object to be tested to a proper direction and smoothly acquire correct data;
S2, designing the light source angle of the machine to be an angle-adjustable light source so as to adjust the angle of incident light, thereby overcoming signal shielding and successfully obtaining correct data.
Further, in the step S1, the object to be measured is a wafer.
Further, in the step S1, a short side of the gold bump is used as an incident angle direction.
Further, in the step S2, the incident light angle may be adjusted to 45 ° to 0 °.
Further, the wafer level bump 3D AOI test method is not limited to gold bump products, and other products that may be signal shielded may be used.
Further, the other products that may be designed by signal masking include: solder bumps, stud copper bumps, RDL packages.
The beneficial effects of the invention are as follows: because the gold bump product design is mainly rectangular bump design, the short side of the bump is open, and the long side of the bump is close to other bumps, the bump layout design and arrangement direction are confirmed first, the incident light is emitted from the long side of the bump to cause signal shielding and can not successfully acquire data to cause data errors, therefore, the invention designs or changes the machine to a 360-degree rotary platform to rotate the object to be tested to a proper direction to successfully acquire correct data, and designs or changes the angle of the machine light source to an adjustable incident light angle to overcome signal shielding and successfully acquire correct data.
Drawings
FIG. 1 is a schematic diagram of a platform of a prior art machine;
FIG. 2 is a schematic diagram of step S1 in a 3D AOI test of a wafer level bump according to the present invention;
FIG. 3 is a schematic view of a light source angle of a machine in the prior art;
fig. 4 is a schematic diagram of step S2 in the 3D AOI test of the wafer level bump of the present invention.
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
Legend: 1. incident light; 2. refracting light; 3. a wafer; 4. and a bump.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by those skilled in the art based on the embodiments of the present invention without making any inventive effort are within the scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. In addition, any methods and materials similar or equivalent to those described herein can be used in the present application. The preferred methods and materials described herein are illustrative only and should not be construed as limiting the application.
The experimental methods in the following examples are conventional methods unless otherwise specified, and the experimental materials used in the following examples are commercially available unless otherwise specified.
Examples
An embodiment of the present invention provides: the 3D AOI test of the wafer level bump comprises the following steps:
S1, a traditional wafer level bump 3D AOI test machine platform is usually fixed, so that the flexibility and accuracy of the test are limited to a certain extent, and in order to solve the problem, the invention designs a 360-degree rotary platform which adopts a precise rotary mechanism and a high-precision positioning system, and can realize the omnibearing rotation of an object to be tested, so that the object to be tested can be ensured to be turned to a proper direction for the test;
in the realization process, the platform adopts a motor to drive the rotating mechanism, and the rotating angle and the rotating speed of the motor are precisely controlled through the control system, so that the stable rotation of the object to be measured is realized. Meanwhile, the platform is also provided with a high-precision positioning system, so that the position and the direction of an object to be detected can be monitored in real time, and the accuracy of test data is ensured;
As shown in fig. 1 and 2, the platform of the machine is designed as a 360-degree rotatable platform to rotate the object to be measured to a proper direction so as to successfully obtain correct data;
S2, in practical application, an object to be tested (such as a gold bump on a wafer) is placed on the rotating platform. Before the test starts, the control system firstly determines the optimal test direction of the object to be tested according to the preset test requirement. Then, the control system drives the motor to rotate the platform to enable the object to be tested to be turned to the optimal test direction, and in the rotating process, the positioning system monitors the position and the direction of the object to be tested in real time to ensure the rotating accuracy and stability;
After the turning of the object to be tested is completed, the test system starts to perform 3D AOI test. Because the object to be tested is in the optimal test direction, the test system can successfully acquire the three-dimensional shape data of the object to be tested, and provides accurate basis for subsequent defect detection and analysis;
As shown in fig. 3 and 4, the light source angle of the machine is designed as an adjustable angle light source to adjust the angle of the incident light, so as to overcome signal shielding and successfully obtain correct data.
The design of a 360 degree rotatable platform has the following advantages:
The flexibility is high: the platform can rotate the object to be tested in all directions, meets the testing requirements of different directions and angles, and improves the testing flexibility;
the accuracy is high: the stability and the accuracy of the object to be tested in the rotating process are ensured through the high-precision positioning system, and the reliability of test data is improved;
the operation is simple and convenient: the control system can automatically complete rotation and positioning of the object to be tested, reduces operation difficulty and complexity, and improves testing efficiency.
The design of the angle-adjustable light source has the following advantages:
the adaptability is strong: the light source can adapt to objects to be tested with different shapes, sizes and surface characteristics, so that the adaptability and the flexibility of the test are improved;
The intelligent degree is high: the intelligent control system is used for realizing automatic adjustment of the incident light angle, so that the operation difficulty and complexity are reduced, and the intelligent level of the test is improved;
the expansibility is good: the light source design has good expansibility, can be integrated and linked with other test equipment, and realizes a more efficient test flow.
In the step S1, the object to be measured is a wafer.
In the step S1, the short side of the gold bump is used as the incident angle direction.
In the step S2, the angle of the incident light can be adjusted to 45 ° to 0 °, in this range, the light source can flexibly adjust the angle of the incident light according to different test requirements and characteristics of the object to be tested, so as to ensure that the light can fully irradiate the surface of the object to be tested, and avoid signal shielding.
The wafer level bump 3D AOI test method is not limited to gold bump products, and other products that may be signal shielded may be used.
The other possible products designed by signal shielding include: solder bumps, stud copper bumps, RDL packages.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
The invention and its embodiments have been described above with no limitation, and the invention is illustrated in the figures of the accompanying drawings as one of its embodiments, without limitation in practice. In summary, those skilled in the art, having benefit of this disclosure, will appreciate that the invention can be practiced without the specific details disclosed herein.
Claims (6)
1. Wafer level bump 3D AOI test, its characterized in that: the method comprises the following steps:
S1, designing a platform of a machine table into a 360-degree rotary platform so as to rotate an object to be tested to a proper direction and smoothly acquire correct data;
S2, designing the light source angle of the machine to be an angle-adjustable light source so as to adjust the angle of incident light, thereby overcoming signal shielding and successfully obtaining correct data.
2. The wafer level bump 3D AOI test of claim 1, wherein: in the step S1, the object to be measured is a wafer.
3. The wafer level bump 3D AOI test of claim 2, wherein: in the step S1, the short side of the gold bump is used as the incident angle direction.
4. A wafer level bump 3D AOI test according to claim 3, wherein: in the step S2, the incident light angle may be adjusted to 45 ° to 0 °.
5. The wafer level bump 3D AOI test of claim 4, wherein: the wafer level bump 3D AOI test method is not limited to gold bump products, and other products that may be signal shielded may be used.
6. The wafer level bump 3D AOI test of claim 5, wherein: the other possible products designed by signal shielding include: solder bumps, stud copper bumps, RDL packages.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410422583.0A CN118311037A (en) | 2024-04-09 | 2024-04-09 | Wafer level bump 3D AOI testing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410422583.0A CN118311037A (en) | 2024-04-09 | 2024-04-09 | Wafer level bump 3D AOI testing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118311037A true CN118311037A (en) | 2024-07-09 |
Family
ID=91727695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410422583.0A Pending CN118311037A (en) | 2024-04-09 | 2024-04-09 | Wafer level bump 3D AOI testing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118311037A (en) |
-
2024
- 2024-04-09 CN CN202410422583.0A patent/CN118311037A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6820891B2 (en) | Wafer inspection system and method | |
| US4978224A (en) | Method of and apparatus for inspecting mounting of chip components | |
| US6671397B1 (en) | Measurement system having a camera with a lens and a separate sensor | |
| JP5109633B2 (en) | Measuring method and inspection method, measuring device and inspection device | |
| WO2010090605A1 (en) | Methods for examining a bonding structure of a substrate and bonding structure inspection devices | |
| JPH11316112A (en) | System for inspecting integrated circuit with crossing optical axes | |
| US20200132438A1 (en) | Bonding device and method for detecting height of subject | |
| US9879982B2 (en) | Method and arrangement for measuring internal threads of a workpiece with an optical sensor | |
| CN110645911A (en) | Device and method for obtaining complete outer surface 3D contour through rotary scanning | |
| CN110542392A (en) | Detection equipment and detection method | |
| JP2010256151A (en) | Shape measuring method | |
| US6242756B1 (en) | Cross optical axis inspection system for integrated circuits | |
| JP3978507B2 (en) | Bump inspection method and apparatus | |
| CN118311037A (en) | Wafer level bump 3D AOI testing | |
| JP2006292647A (en) | Apparatus for inspecting bonding wire | |
| JP7450272B2 (en) | Measuring the loop height of overlapping bond wires | |
| CN114858097B (en) | Laser radar rotating mirror included angle measuring method and measuring device | |
| CN216696101U (en) | Detection system | |
| JPH10261900A (en) | Method for inspecting mounted part | |
| JP2008041758A (en) | Method and apparatus for inspecting transferred state of flux | |
| JPH02114386A (en) | Defect inspecting device | |
| JPH0269606A (en) | Instrument for measuring height position of linear object | |
| JPH01284744A (en) | Inspecting device for electronic component | |
| JPH023447B2 (en) | ||
| CN220271181U (en) | Defect detection system for interference of bright and dark fields and white light |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |