CN118300565A - Resonator with transverse ripple suppression function, filter and molding method - Google Patents
Resonator with transverse ripple suppression function, filter and molding method Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 14
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- 230000008020 evaporation Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
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- 229910052755 nonmetal Inorganic materials 0.000 description 5
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- 230000000694 effects Effects 0.000 description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
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- 230000037431 insertion Effects 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
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Abstract
The invention discloses a resonator with a transverse ripple inhibiting function, a filter and a forming method, comprising an interdigital transducer, wherein a functional area is divided on a substrate of the interdigital transducer, the functional area divided by the tail end of a finger strip is used as a functional area C, a sound velocity conversion layer is arranged on the functional area C, a metal layer is arranged on the substrate, and one part of the metal layer is used as the finger strip and the other part of the metal layer is covered on the sound velocity conversion layer to form a bridge structure at the tail end of the finger strip; the design of the bridge structure in the resonator, the filter and the forming method increases the excitation of the interdigital transducer at the tail ends of the interdigital transducer and blocks the generation of transverse mode waves.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a resonator with a transverse ripple suppression function, a filter and a forming method.
Background
The surface acoustic wave (Surface Acoustic Wave, SAW) filter is widely applied to the field of radio frequency communication because of the characteristics of small volume and suitable mass production. Along with the higher and higher complexity of the application scene of the communication system, the SAW filter with the composite film substrate (bonding substrate/multilayer film substrate) and the LiNbO3 piezoelectric film is gradually adopted in the industry to meet the market demands of high Q, high isolation, low loss performance and high temperature stability.
However, products based on composite membrane substrates and LiNbO3 piezoelectric thin film fabrication techniques can result in severe transverse mode moire generation. These transverse modes will produce spurious responses, increasing the insertion loss of the SAW resonator/filter, causing fluctuations in the passband, reducing the device sensitivity, and having a greater impact on the device performance. Therefore, lateral mode suppression is a pain spot in the industry and is also a problem to be solved.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a resonator with a transverse ripple suppression function, a filter and a forming method, and the transverse mode ripple is effectively suppressed.
The resonator with the function of inhibiting transverse ripple comprises an interdigital transducer, wherein a functional area is divided on a substrate of the interdigital transducer, the functional area divided by the tail end of a finger strip is used as a functional area C, a sound velocity conversion layer is arranged on the functional area C, a metal layer is arranged on the substrate, and one part of the metal layer is used as the finger strip, and the other part of the metal layer is covered on the sound velocity conversion layer so as to form a bridge-shaped structure at the tail end of the finger strip.
Further, when the interdigital transducer has a false finger, a functional area B is arranged at the tail end of the false finger, a sound velocity conversion layer is arranged on the functional area B, and a bridge-shaped structure is formed on the functional area B by covering the sound velocity conversion layer with a metal layer.
Further, the functional area further comprises a functional area D, a sound velocity conversion layer is arranged on the functional area D, and the metal layer covers the sound velocity conversion layer to form a bridge-shaped structure on the functional area D.
Further, the multifunctional optical fiber also comprises a first reflecting grating and a second reflecting grating, wherein the interdigital transducer is arranged between the first reflecting grating and the second reflecting grating, two sides of the functional area C are respectively arranged on the first reflecting grating and the second reflecting grating in an extending mode, the first reflecting grating is not connected with the functional area C on the interdigital transducer, and the interdigital transducer is not connected with the functional area C on the second reflecting grating.
Further, the thickness of the metal layer is 5-12% lambda, the thickness of the area of the sound velocity conversion layer on the functional area C is 0.01-0.24 lambda, the width is 0.3-0.6 lambda, and the length of the area of the sound velocity conversion layer The finger numbers of the first reflecting grating, the interdigital transducer and the second reflecting grating are respectively, wherein eta is the metallization ratio, and lambda represents the wavelength of the propagating sound wave in the piezoelectric crystal.
Further, the sound velocity conversion layer is a non-metal dielectric layer, and the non-metal dielectric layer adopts SiO 2.
The resonator with the function of inhibiting transverse ripple comprises an interdigital transducer, wherein a functional area is divided on a substrate of the interdigital transducer, the functional area divided by the tail end of a finger strip is used as a functional area C, a first metal layer is arranged on the substrate and used as a finger strip, the first metal layer is arranged at the position of the functional area C in a broken mode, then a sound velocity conversion layer is arranged at the position of the functional area C, a second metal layer is arranged in a covering mode in the extending direction of the finger strip, the second metal layer covers the finger strip to form a connecting structure, and the second metal layer covers the sound velocity conversion layer to form a bridge-shaped structure at the tail end of the finger strip.
Further, the device comprises a shell and a resonator arranged in the shell, wherein the resonator is the resonator.
A method of forming a resonator having a function of suppressing transverse ripples, comprising the steps of:
performing functional area division on a substrate of the interdigital transducer to obtain a functional area C;
injecting a nonmetallic medium into the functional area C in a photoetching and photoresist removing/etching mode to form an acoustic velocity conversion layer;
And injecting metal above the finger strips and the sound velocity conversion layer in a photoetching, vapor plating and photoresist removing/etching mode to form a metal layer, and covering the sound velocity conversion layer on the functional area C at the tail ends of the finger strips by the metal layer to form a bridge-shaped structure.
A method of forming a resonator having a function of suppressing transverse ripples, comprising the steps of:
performing functional area division on a substrate of the interdigital transducer to obtain a functional area C and a functional area D;
injecting metal above the finger strips in the modes of photoetching, vapor plating and photoresist removal/etching to obtain a first metal layer, wherein the first metal layer is cut off and arranged at the functional area C;
Injecting a nonmetallic medium into the functional area C in a photoetching and photoresist removing/etching mode to form an acoustic velocity conversion layer, wherein the thickness of the acoustic velocity conversion layer is larger than that of the first metal layer;
And injecting metal above the first metal layer and the sound velocity conversion layer in a photoetching, evaporation and photoresist removing/etching mode to form a second metal layer, and covering the sound velocity conversion layer on the functional area C at the tail end of the finger strip by the second metal layer to form a bridge-shaped structure.
The resonator, the filter and the forming method with the function of inhibiting transverse ripple have the advantages that: the resonator, the filter and the forming method with the function of inhibiting transverse ripple provided by the structure of the invention are characterized in that the function area is divided on the interdigital transducer, then the sound velocity conversion layer is arranged on the function area C, then the metal layer is arranged on the length direction of the finger strip, the function area C at the tail end of the finger strip is realized, the non-metal layer is covered by the metal layer to form a bridge-shaped structure, the bridge-shaped structure changes the capacitance distribution of the function area C, the excitation of the interdigital transducer at the tail end of the interdigital transducer is increased, the generation of transverse mode ripple is blocked, and compared with the existing transverse mode blocking method, the bridge-shaped structure is simpler in design process realization and higher in reliability.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of the functional area division on an interdigital transducer;
FIG. 3 is a schematic diagram of the functional area division on the first reflective grating, interdigital transducer, and second reflective grating;
FIG. 4 is a schematic diagram of a structure in which an acoustic velocity conversion layer is formed on a substrate;
FIG. 5 is a schematic view of the structure of the metal layer on the basis of FIG. 4;
FIG. 6 is a schematic diagram of a bridge structure when the sound velocity conversion layer is triangular;
FIG. 7 is a schematic diagram of a bridge structure when the sonic velocity conversion layer is curved;
FIG. 8 is a schematic diagram of a bridge structure when the sonic velocity conversion layer is rectangular;
FIG. 9 is a schematic diagram of a structure in which a first metal layer is disposed on a finger of a substrate;
fig. 10 is a schematic structural view of the acoustic velocity conversion layer provided on the functional region C on the basis of fig. 9;
FIG. 11 is a schematic vertical cross-section of FIG. 10;
FIG. 12 is a schematic view of a structure in which a second metal layer is provided on the basis of FIG. 11;
FIG. 13 is a schematic diagram of a bridge structure formed by a resonator/filter with a phantom finger;
fig. 14 is a schematic view of the placement of bridge structures in the functional area D;
FIG. 15 is a schematic diagram showing a comparative form in the prior art;
FIG. 16 is a graph showing the real part of admittance characteristics of a comparative form of the first embodiment with the prior art;
FIG. 17 is a graph showing the imaginary part curve of admittance characteristics of a comparative form of the first embodiment with the prior art;
FIG. 18 is a schematic view of the placement of bridge structures on functional areas A and C;
FIG. 19 is a schematic view of a bridge structure with array pattern disposed on functional areas A and C;
FIG. 20 is a schematic view of the bridge structure disposed entirely over functional areas C and D;
FIG. 21 is a schematic view of an array-wise bridge structure disposed over functional area C;
The device comprises a first reflecting grating, a 2-interdigital transducer, a 3-second reflecting grating, a 4-sonic velocity conversion layer, a 5-metal layer, a 6-first metal layer, a 7-second metal layer and an 8-substrate.
Detailed Description
In the following detailed description of the present invention, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit or scope of the invention, which is therefore not limited to the specific embodiments disclosed below.
As shown in fig. 1 to 21, embodiment one
The resonator with the function of inhibiting transverse ripple comprises an interdigital transducer 2, wherein a functional area is divided on a substrate of the interdigital transducer 2, the functional area divided by the tail end of a finger strip is used as a functional area C, a sound velocity conversion layer 4 is arranged on the functional area C, a metal layer 5 is arranged on the substrate, and one part of the metal layer 5 is used as the finger strip, and the other part of the metal layer is covered on the sound velocity conversion layer 4 to form a bridge-shaped structure at the tail end of the finger strip.
The comparison of the products in the prior art is that, as shown in fig. 15, the transverse mode pulsation shown by arrows R1-R6 occurs between the resonant frequency and the antiresonant frequency, and it is obvious from the figure that the semiconductor process is based on SAW surface acoustic wave products realized by the composite film substrate and LiNbO3 piezoelectric film manufacturing technology, and the sound wave propagates in a typical interdigital structure and has stronger transverse mode ripple (R1-R6 in fig. 15), so that the filter band is uneven, the performance is unstable, and the insertion loss fluctuation is large; according to the embodiment, through dividing the functional area on the interdigital transducer 2, arranging the sound velocity conversion layer 4 on the functional area C, and arranging the metal layer 5 along the length direction of the finger strip, the effect that the sound velocity conversion layer 4 is covered on the functional area C at the tail end of the finger strip is achieved, the bridge-shaped structure changes the capacitance distribution of the functional area C, the excitation of the interdigital transducer 2 at the tail end of the finger strip is increased, the generation of transverse mode ripple is blocked, and compared with the existing transverse mode blocking method, the bridge-shaped structure design process is simpler to realize and higher in reliability, and the generation of the transverse mode ripple is effectively restrained as shown in fig. 16 and 17.
According to the formula: the propagation velocity v=λ×f0 of the medium, that is, the product of the wave velocity V and the vibration frequency f0, shows that, for the acoustic wave propagating in the piezoelectric crystal using the specified tangential direction, (the tangential direction is the same, the propagation velocity is the same), the wavelength due to the frequency is different at different device operating frequencies. And the design of the filter device is different according to different operating frequency requirements, and different lambda is used. Therefore, the material parameters are directly proportional to lambda, i.e. inversely proportional to the operating frequency.
Specifically, as shown in fig. 3, the resonator is composed of a reflection grating 1, an interdigital transducer 2, and a reflection grating 2, and the interdigital transducer 2 is disposed between the first reflection grating 1 and the second reflection grating 3. The functional area C is a bridge structure forming area, the dielectric area material of the functional area C is preferably SiO 2, the functional area C described in this embodiment corresponds to the functional areas C1 and C2 in the drawing, the functional area B corresponds to the functional areas B1 and B2, and the functional area a corresponds to the functional areas A1 and A2. For the division of the functional area, reference is made to the patent CN117713738a, "resonator, filter and forming method with function of suppressing the hybrid ripple," and detailed description will not be given for the specific division process of the functional area.
The thickness of the metal layer 5 of all the functional areas is preferably (0.05λ to 0.12λ) (actual process is about 0.01um to 0.85 um), so that the functional area division is divided according to the extending direction of the finger strips, and thus the metal layer 5 is disposed across all the layers. The thickness of the region of the sound velocity conversion layer 4 on the functional region C is 0.01lambda-0.24lambda, the width is 0.3lambda-0.6lambda, and the length of the region of the sound velocity conversion layer 4 The finger numbers of the first reflecting grating 1, the interdigital transducer 2 and the second reflecting grating 3 are respectively, wherein eta is the metallization ratio, and lambda represents the wavelength of the sound wave transmitted in the piezoelectric crystal. In this embodiment, the acoustic velocity conversion layer 4 is a non-metal dielectric layer, and the non-metal dielectric layer adopts SiO 2.
In the present embodiment, the substrates of the first reflective grating 1, the interdigital transducer 2 and the second reflective grating 3 are preferably a composite substrate and a LiNbO 3 piezoelectric substrate, wherein the composite substrate is preferably a bonding substrate and a multilayer thin film substrate, and the specific structure and dimensional relationship thereof are described in detail in CN117713738a.
As shown in fig. 1 to 5, a method for forming a resonator having a function of suppressing transverse ripples, comprising the steps of:
performing functional area division on the substrate of the interdigital transducer 2 to obtain a functional area C, as shown in FIG. 2;
Injecting a nonmetallic medium into the functional area C by photoetching and photoresist removing/etching to form an acoustic velocity conversion layer 4, as shown in fig. 4;
metal is injected above the finger strips and the sound velocity conversion layer 4 by means of photoetching, evaporation and photoresist removal/etching to form a metal layer 5, and the metal layer 5 covers the sound velocity conversion layer 4 on the functional area C at the tail end of the finger strips to form a bridge-shaped structure as shown in fig. 1 and 5.
Example two
As shown in fig. 9 to 13, the second embodiment is basically identical to the first embodiment in that the second embodiment is provided with the first metal layer 6 on the substrate, then the sound velocity conversion layer 4 is provided on the functional area, and finally the second metal layer 7 is provided, so that the generation of transverse mode waves can be effectively suppressed, and the transverse mode waves can be obviously improved.
In the second embodiment, the resonator having the function of suppressing transverse ripples includes the first reflective grating 1, the interdigital transducer 2, and the second reflective grating 3, the functional area division is performed on the substrate of the interdigital transducer 2, the functional area divided by the end of the finger is taken as the functional area C, the first metal layer 6 is provided in a covering manner in the extending direction of the finger, the first metal layer 6 is opened at the functional area C, then the sound velocity conversion layer 4 is provided at the functional area C, the second metal layer 7 is provided in a covering manner in the extending direction of the finger, the second metal layer 7 covers the finger to form a connection structure, and the second metal layer 7 covers the sound velocity conversion layer 4 to form a bridge structure at the end of the finger.
The forming method comprises the following steps:
The method comprises the following steps:
performing functional area division on the substrate of the interdigital transducer 2 to obtain a functional area C and a functional area D;
injecting metal above the finger strips by means of photoetching, evaporation and photoresist removal/etching to obtain a first metal layer 6, wherein the first metal layer 6 is cut off and arranged at the functional area C, as shown in FIG. 9;
Injecting a nonmetallic medium into the functional area C by photoetching and photoresist removing/etching to form a sound velocity conversion layer 4, wherein the thickness of the sound velocity conversion layer 4 is larger than that of the first metal layer 6, as shown in fig. 10 and 11;
metal is injected above the first metal layer 6 and the sound velocity conversion layer 4 by means of photolithography, evaporation and photoresist removal/etching to form a second metal layer 7, and the second metal layer 7 covers the sound velocity conversion layer 4 on the functional region C at the end of the finger to form a bridge structure, as shown in fig. 12.
In the first and second embodiments, as shown in fig. 13, when the resonator has a dummy finger, a functional region B is provided at the end of the dummy finger, a sound velocity conversion layer 4 is provided on the functional region B, a metal layer 5 covers the sound velocity conversion layer 4 to form a bridge structure on the functional region B, and the bridge structure is provided on the functional region B, which can be referred to as description of the functional region C in the first and second embodiments.
In this embodiment, only the functional area division may be set on the interdigital transducer 2, or the functional area division may be set on the first reflective grating 1 and the second reflective grating 3 synchronously, and preferably, the linear area formed by connecting the functional areas is perpendicular to the finger strips on the interdigital transducer 2. The bridge structure may be disposed in the functional area A, B, C, D or the like, the bridge structure may be disposed in the functional area B, D, the effect of suppressing transverse modes may be improved to a small extent without affecting basic performance, and the transverse ripple may be reduced, where the bridge structure may be obtained by using the two embodiments described above, the bridge structure of the functional area A, B, D is similar to the bridge structure forming process of the functional area C described above, the bridge structure is disposed in the functional area D as shown in fig. 14, the bridge structures are disposed in the functional areas a and C as shown in fig. 18 and 19, the bridge structures in fig. 19 are disposed in an array, the effect of suppressing transverse ripple is better, the bridge structures in an array form are disposed in the functional area C and D as shown in fig. 20, the effect of suppressing transverse ripple is better, and the bridge structure in an array form is similar to the forming method of the resonator having the function of suppressing transverse ripple described in the present embodiment, which is more difficult in the specific forming process, and thus the bridge structure in an almost economical and practical manner is described on the basis of suppressing transverse ripple.
In addition, the functional areas A, B, C, D and the like may be disposed on the first reflective grating 1, the interdigital transducer 2, and the second reflective grating 3, that is, bridge structures disposed on the functional areas may be embodied on the first reflective grating 1, the interdigital transducer 2, and the second reflective grating 3; meanwhile, a bridge structure is formed in other functional areas to change capacitance distribution of the corresponding functional areas, and a scheme for blocking generation of transverse mode ripples is also a case related to the embodiment; the bridge structures may be provided in the functional areas alone or in combination (e.g., bridge structures are provided in the functional areas B, C, D), such as shown in fig. 14, 18, 19, 20, and 21.
It should be noted that the appearance shape of the bridge structure above may be different by changing the shape of the sound velocity conversion layer 4, for example, the shape of the sound velocity conversion layer 4 (SiO 2) is triangle, circle, rectangle, etc., so as to obtain different bridge structures, as shown in fig. 6, 7, 8.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (10)
1. The resonator with the function of inhibiting transverse ripple is characterized by comprising an interdigital transducer (2), wherein a functional area is divided on a substrate of the interdigital transducer (2), the functional area divided by the tail end of a finger strip is used as a functional area C, a sound velocity conversion layer (4) is arranged on the functional area C, a metal layer (5) is arranged on the substrate, and one part of the metal layer (5) is used as the finger strip and the other part is covered on the sound velocity conversion layer (4) so as to form a bridge structure at the tail end of the finger strip.
2. Resonator with transverse ripple suppression according to claim 1, characterized in that when the interdigital transducer (2) has a dummy finger, a functional area B is provided at the end of the dummy finger, a sound velocity conversion layer (4) is provided on the functional area B, and a metal layer (5) covers the sound velocity conversion layer (4) forming a bridge structure on the functional area B.
3. The resonator with the function of suppressing transverse ripples as recited in claim 1, characterized in that the functional area further includes a functional area D on which the sound velocity conversion layer (4) is provided, and the metal layer (5) covers the sound velocity conversion layer (4) to form a bridge structure on the functional area D;
Or/and at the same time
The functional area further comprises a functional area A, the sound velocity conversion layer (4) is arranged on the functional area A, and the metal layer (5) covers the sound velocity conversion layer (4) to form a bridge-shaped structure on the functional area A.
4. Resonator with transverse ripple suppressing function according to claim 1, further comprising a first reflective grating (1) and a second reflective grating (3), wherein the interdigital transducer (2) is arranged between the first reflective grating (1) and the second reflective grating (3), wherein the two sides of the functional area C extend to the first reflective grating (1) and the second reflective grating (3), respectively, the first reflective grating (1) is not connected to the functional area C on the interdigital transducer (2), and wherein the functional area C on the interdigital transducer (2) and the second reflective grating (3) is not connected.
5. The resonator with the function of suppressing transverse ripples as set forth in claim 4, wherein the thickness of the metal layer (5) is 5% λ to 12% λ, the thickness of the region where the acoustic velocity conversion layer (4) is located on the functional region C is 0.01λ to 0.24 λ, the width is 0.3λ to 0.6λ, and the length of the region where the acoustic velocity conversion layer (4) is located The number of fingers respectively being a first reflecting grating (1), an interdigital transducer (2) and a second reflecting grating (3), eta being a metallization ratio, lambda representing the wavelength of a propagating sound wave in the piezoelectric crystal.
6. Resonator with transverse ripple suppression function according to claim 1, characterized in that the acoustic velocity conversion layer (4) is a non-metallic dielectric layer, which is SiO 2.
7. The resonator with the function of inhibiting transverse ripple is characterized by comprising an interdigital transducer (2), wherein a functional area is divided on a substrate of the interdigital transducer (2), the functional area divided by the tail end of a finger strip is used as a functional area C, a first metal layer (6) is arranged on the substrate and used as the finger strip, the first metal layer (6) is arranged at the position of the functional area C in a broken way, then a sound velocity conversion layer (4) is arranged at the position of the functional area C, a second metal layer (7) is arranged in a covering way in the extending direction of the finger strip, and the second metal layer (7) covers the sound velocity conversion layer (4) to form a bridge structure at the tail end of the finger strip.
8. A filter having a function of suppressing transverse ripples, comprising a housing and a resonator provided in the housing, the resonator being the resonator according to claim 1 or 7.
9. The method of forming a resonator having a function of suppressing transverse ripples as set forth in claim 1, comprising the steps of:
Performing functional area division on a substrate of the interdigital transducer (2) to obtain a functional area C;
Injecting a nonmetallic medium into the functional area C by photoetching and photoresist removing/etching modes to form an acoustic velocity conversion layer (4);
and injecting metal above the finger strips and the sound velocity conversion layer (4) in a photoetching, evaporation and photoresist removing/etching mode to form a metal layer (5), wherein the metal layer (5) covers the sound velocity conversion layer (4) on the functional area C at the tail ends of the finger strips to form a bridge-shaped structure.
10. The method of forming a resonator having a function of suppressing transverse ripples as set forth in claim 7, comprising the steps of:
performing functional area division on a substrate of the interdigital transducer (2) to obtain a functional area C and a functional area D;
injecting metal above the finger strips in a photoetching, vapor plating and photoresist removing/etching mode to obtain a first metal layer (6), wherein the first metal layer (6) is arranged at the functional area C;
Injecting a nonmetallic medium into the functional area C in a photoetching and photoresist removing/etching mode to form an acoustic velocity conversion layer (4), wherein the thickness of the acoustic velocity conversion layer (4) is larger than that of the first metal layer (6);
And injecting metal above the first metal layer (6) and the sound velocity conversion layer (4) in a photoetching, evaporation and photoresist removing/etching mode to form a second metal layer (7), and covering the sound velocity conversion layer (4) by the second metal layer (7) on the functional area C at the tail end of the finger strip to form a bridge-shaped structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410487064.2A CN118300565A (en) | 2024-04-23 | 2024-04-23 | Resonator with transverse ripple suppression function, filter and molding method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410487064.2A CN118300565A (en) | 2024-04-23 | 2024-04-23 | Resonator with transverse ripple suppression function, filter and molding method |
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| CN202410487064.2A Pending CN118300565A (en) | 2024-04-23 | 2024-04-23 | Resonator with transverse ripple suppression function, filter and molding method |
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