CN1182423C - Composite nano metal particle-semiconductor medium film and its prepn process and completely optical kerr switch - Google Patents
Composite nano metal particle-semiconductor medium film and its prepn process and completely optical kerr switch Download PDFInfo
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- CN1182423C CN1182423C CNB021463778A CN02146377A CN1182423C CN 1182423 C CN1182423 C CN 1182423C CN B021463778 A CNB021463778 A CN B021463778A CN 02146377 A CN02146377 A CN 02146377A CN 1182423 C CN1182423 C CN 1182423C
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Abstract
The present invention provides a coextruded film of a metal nanometer particle-semiconductor medium, which has large three-order optical nonlinearity coefficients and fast response speed. The coextruded film is deposited on one side of a transparent base. Substrate is a semiconductor dielectric film the thickness of which is between 100 and 200 nm, such as alkali metal oxide or alkali earth oxide, etc., wherein noble metal nanometer particles the diameter of which is from 5 to 20 nm are buried in the dielectric film in a uniformly distributed mode. The coextruded film has the preparation method that under the condition of high vacuum, an alkali metal or alkali earth metal film is deposited on one side of the transparent base until the white light transmissivity is dropped to 30%. The semiconductor dielectric film can be obtained by oxidizing the metal film until the white light transmissivity is basically restored. A noble metal film is deposited on the surface of the semiconductor dielectric film; then, the annealing treatment of more than 120 DEG C in vacuum for half an hour and 100 DEG C in atmosphere for one hour can be orderly carried out. The present invention also provides an all-optical switch which adopts the coextruded film as a kerr medium.
Description
Technical field:
The invention belongs to nonlinear optical material and method for making thereof and applied technical field, relate to device for non-linear optical, especially completely optical kerr switch.
Background technology:
Along with the growth at full speed of world communication portfolio, the construction of high capacity, high-speed fibre-optic transmission system (FOTS) and Broadband Integrated Services Digital network has become the development trend of modern communication networks.State such as American and Britain, Japan successively utilizes intensive light wave multiplex technique (DWDM) successfully to carry out the test of vast capacity fiber-optic communications traffic, as AT﹠amp; T company carries out 10Gbit/s, 2000km transmission test with Erbium-Doped Fiber Amplifier (EDFA); Britain BNR company has carried out 20Gbit/s, 12500km communication experiment; Japan NTT has carried out 160Gbit/s, 10000kmWDN orphan's communication experiment and 40Gbit/s, 70000km single channel orphan communication experiment; U.S. Lucent Technologies also designs 432 cores and separates optical fiber cable, and message transmission rate can reach 172.8Tbit/s.
The development of high-speed high capacity fibre-optic transmission system (FOTS) is had higher requirement to light switching technology in the All-Optical Communication Network and corresponding photoelectron element.Photoswitch is the core devices of light switching technology, is mainly used in a plurality of electing property of the wavelength light signal switching manipulation to being transmitted in the optical fiber, directly affects the scale and the performance of the exchange velocity and the Optical Transmission Network OTN of communication network data.Photoswitch in being extensive use of in the optical-fibre communications net at present and further developing mainly is divided into two classes by principle of work: one is the removable micro-mechanical-optical switch that MEMS (micro electro mechanical system) (MEMS) combines with micro-optics and produces, and its switching speed is relevant with the factors such as response speed of micro mechanical structure, microsensor and microactrator; It two is the non-linear directional coupler all-optical switch that changes principle based on traditional nonlinear material photon-induced refractive index, and its switching speed is by the nonlinear optical response speed decision of material.Comparatively speaking, micro-mechanical-optical switch occupies remarkable advantages in the transparency, power consumption and aspect such as crosstalk, but its switching speed generally can only reach microsecond (10-6s) magnitude [Tze-Wei Yeow, K.L.Eddie Law, and Andrew Goldenberg, " MEMS optical switches ", IEEECommunications Magazine, Vol.39, No.11, (2001) 158.].Though the nonlinear optics switching device that traditional III-V group iii v compound semiconductor material constitutes has the response speed of some soon, yet be subjected to the restriction of charge carrier migration rate in the semiconductor bulk, its switching speed is also only at nanosecond (10-9s) magnitude [K.Koynov, N.Paraire, F.Bertrand, R.El.Bermil, and P.Dansas, " Design and investigation ofsemiconductor waveguide structures with grating couplers used as all-opticalswitches ", Journal of Optics A:Pure and Applied Optics, Vol.3, No.1, (2001) 26.].As seen, the transfer rate of present relatively fibre-optic transmission system (FOTS) Tbit/s (being 1012 of per seconds), existing light shutter device is subjected to the influence of its response speed to limit transmission and the exchange of data in full optical communication net significantly, has constituted " bottleneck " of high-capacity and high-speed optical fiber transmission network development.
Based on Nonlinear Thin membrane material optical kerr effect is that to change anisotropic Kerr-type all-optical switch be a kind of novel non-linearity optical switch device that can realize ultrafast time response to photon-induced refractive index.The structure of Kerr-type all-optical switch and principle of work are as shown in Figure 2.A branch of weak flashlight 4 is a nonlinear optical film 7 by the kerr medium that front and back are placed with polaroid 5 and 6, because polaroid 5 and 6 is adjusted to quadrature in advance, the transmitance of flashlight is zero, can't be detected device 8 and receive.The time spent is done in the pumping laser pulse 9 that is subjected to an other beam intensity when kerr medium, change anisotropic three rank optical nonlinearity phenomenons owing to photon-induced refractive index occurs in the membraneous material body, flashlight changes through medium rear polarizer direction, thus vertical mutually with polaroid 5 polarization directions also be to produce light component on the polarization direction of polaroid 6.The detector 8 that this component is placed in after the polaroid 6 receives, and forms the output signal of photoswitch, and the power of signal is relevant with three rank optical nonlinearity coefficient magnitude of membraneous material, and the pulsewidth of signal is then determined by the non-equilibrium evolution process of film refractive index.The amplitude that the film light induced refractive index changes in the Kerr-type all-optical switch is relevant with three rank optical nonlinearity coefficients of material, and the speed that changes is then determined by the nonlinear optical response speed of material.Select suitable nonlinear material, utilize ultrashort laser pulse, can in the extremely short time, obtain the change of film refractive index, realize ultrafast optical modulation, photoswitch, optical logic computing, and various optical information processing processes such as wavelength Conversion.Therefore, the key of the ultrafast all-optical switch development of Kerr-type is to search out the nonlinear optical material that a kind of existing three big rank optical nonlinearity coefficients have the response speed of being exceedingly fast again.
Summary of the invention:
Nonlinear optical material---the metal nanoparticle-semiconductor medium laminated film that the object of the present invention is to provide a kind of existing three big rank optical nonlinearity coefficients to have the response speed of being exceedingly fast again.
Another object of the present invention provides the preparation method of described metal nanoparticle-semiconductor medium laminated film.
It is the completely optical kerr switch of kerr medium with described metal nanoparticle-semiconductor medium laminated film that another purpose of the present invention provides a kind of.Solve the restriction problem that the currently used semiconductor material of completely optical kerr switch device exists aspect nonlinear optical response speed, to satisfy the demand of fields such as high speed full optical information processing and high-capacity and high-speed Fiber Optical Communication System to ultrafast all-optical switch device.
Metal nanoparticle of the present invention-semiconductor medium laminated film is deposited on a side of transparent substrates, matrix is alkali metal oxide or the semiconductor medium film such as alkaline earth oxide of thickness between 100～200nm, wherein buries the noble metal nano particles that equally distributed diameter is 5～20nm.
The volume occupation rate of noble metal nano particles is 50%～60% in the described laminated film.
Described alkali metal oxide is Cs
xO (2≤x≤3).
Described alkaline earth oxide is BaO.
Described noble metal is selected from Au, Ag or Cu.
The preparation method of described laminated film of the present invention may further comprise the steps successively:
(1) side in transparent substrates deposits alkaline metal or earth alkali metal film under high vacuum condition, drops at 30% o'clock to the white light transmitance and ends;
(2) feed high purity oxygen gas and make alkaline metal or earth alkali metal film oxidation, recover substantially, obtain the semiconductor medium film to the white light transmitance;
(3) at semiconductor medium film surface depositing noble metal film;
(4) film that (3) are made carries out in the vacuum 100 ℃ of annealing in process more than a hour in the above and atmosphere 120 ℃ of half an hour successively.
The laminated film thickness that makes by said method is 100～200nm, and noble metal nano particles evenly distributes in semiconductor medium, diameter is 5～20nm.
Completely optical kerr switch of the present invention is as kerr medium with described metal nanoparticle-semiconductor medium laminated film.
Technological difficulties of the present invention are the preparation of metal nanoparticle-semiconductor medium laminated film nonlinear optical material, require prepared film to have certain structure, comprise metal nanoparticle particle size and two aspects of position distribution of being imbedded in the semiconductor medium, to obtain three enough big rank optical nonlinearity coefficients, improve the signal to noise ratio (S/N ratio) of Ke Er photoswitch; Require prepared film to have suitable thickness (between 100～200nm) simultaneously, and the volume occupation rate suitably (about 60%) of metal nanoparticle in the film, to reduce the loss of optical signalling in film.Thereby key problem in technology is by the deposition of control noble metal the mean grain size of metal nanoparticle in the laminated film to be controlled in the scope of 5～20nm, so that film is to the light absorption maximum of a certain specific wavelength, the monitoring to film white light transmitance is depended in the preparation process in this control.
The ultrafast smooth Ke Er technology of utilization femtosecond time resolution is studied the nonlinear optics time resolution characteristics of metal nanoparticle of the present invention-semiconductor medium laminated film, and the result shows: the type film has femtosecond (10
-15S) the nonlinear optical response speed that is exceedingly fast of magnitude.Figure 3 shows that the Ag nano particle is imbedded in the time resolution optical kerr effect response spectra of the Ag-BaO laminated film that constitutes in the BaO semiconductor substrate, testing used pumping laser pulse wavelength is 820nm, pulsewidth is 120fs, and the halfwidth of output optical pulse signal is 280fs among the figure.By carrying out reference with known curing charcoal standard model light Ke Er signal under equal conditions, the three rank optical nonlinearity response coefficients that can calculate the type film are 10
-8The esu magnitude.
Completely optical kerr switch of the present invention as kerr medium, utilizes described metal nanoparticle-semiconductor medium laminated film this composite film material photon-induced refractive index under the pumping laser pulse action change transient state anisotropy (being optical kerr effect) to occur and then causes that flashlight polarization direction by film this characteristic that changes realizes the switch control of pumping laser pulse to flashlight.Because only hundreds of femtoseconds of non-equilibrium relaxation time that this composite film material light refractive index under the ultrashort laser pulse effect changes and experienced are the Kerr-type all-optical switch response time that operation material is constructed can reach the femtosecond magnitude with this composite film material.Simultaneously, because this composite film material has three enough big rank optical nonlinearity coefficients, gained Kerr-type all-optical switch has high s/n ratio.Completely optical kerr switch of the present invention can be used for fields such as the light exchange link in the high-speed high capacity Fiber Optical Communication System, full optical information processing, ultrafast optical logic computing and wavelength Conversion.
Description of drawings:
Fig. 1 is metal nanoparticle of the present invention-semiconductor medium complex thin film structure synoptic diagram;
Fig. 2 is the completely optical kerr switch fundamental diagram;
Fig. 3 is the time resolution optical kerr effect response spectra of Ag-BaO laminated film.
Among the figure, 1-noble metal nano particles, 2-oxide semiconductor medium, 3-transparent substrates (glass), 4-flashlight, 5, the 6-polaroid, 7-nonlinear optical film (kerr medium), 8-detector, the pulse of 9-pumping laser.
Embodiment:
Embodiment one: laminated film and preparation thereof
(1) selecting transparent substrates is glass, and (vacuum tightness is better than 5 * 10 under high vacuum condition
-5Pa) at glass one side deposition Ba metallic film, drop at 30% o'clock to the white light transmitance and end;
(2) feeding concentration is that 99.9% oxygen makes the oxidation of Ba metallic film, recovers substantially to the white light transmitance, obtains the BaO film;
(3) at BaO film surface plated metal Ag film;
(4) film that (3) are made carries out in the vacuum 100 ℃ of annealing in process more than a hour in the above and atmosphere 120 ℃ of half an hour successively.
The structural representation of prepared Ag-BaO film deposits semiconductor medium film 2 in a side of substrate of glass 3 as shown in Figure 1, is specially the BaO film; Burying equally distributed diameter in this semiconductor medium film 2 is the noble metal nano particles 1 of 5～20nm, is specially the Ag nano particle; Laminated film thickness is 100～200nm, and the volume occupation rate of Ag nano particle in laminated film is 60%.
Embodiment two: ultrafast optical switch and optical logic device
The Ag nano particle is imbedded in the Ag-BaO laminated film that constitutes in the BaO semiconductor substrate and is deposited on the substrate of glass.As LASER Light Source, optical maser wavelength is 820nm with a multi-thread Argon ion laser synchronous pump Ke Er mirror locked mode titanium sapphire laser device, and pulse width is 120fs, and repetition frequency is 76MHz, and the output single pulse energy is about 24nJ.Laser pulse was divided into two bundles through spectroscope by 10: 1, and wherein stronger is a branch of as control signal, and more weak is a branch of as input signal, and two-beam focuses on Ag-BaO film surface same point with certain included angle, and spot diameter is about 20 μ m.At first control signal light is blocked, owing to be placed with the orthogonal polaroid in polarization direction respectively before and after the Ag-BaO film on the input signal light path, flashlight can't pass through, and switch is in " pass " state, and the detector of output terminal is designated as " 0 ".Then the shielding plate on the control signal light path is removed, because can inducing light refractive index than intense laser pulse in the Ag-BaO thin-film body, this bundle changes anisotropy, flashlight by the time polarization direction change, finally cause the part signal light transmission to be placed on the polaroid after the Ag-BaO film and export, this moment, switch was in " opening " state, and the detector of output terminal receives light signal and is designated as " 1 ".Consider that this switching device only just can produce output when control signal and input signal exist simultaneously, in fact this switching device can realize the function of optical logic AND gate.
In the input signal light path, add optical delay line, change the time delay that control signal light pulse and input signal light pulse arrive film surface, operate time is differentiated ultrafast smooth Ke Er technology, can observe the time resolution characteristics spectral line of thin film switch in the single light pulse mechanism.This spectral line table reveals one and excites output light signal fast rise to reach the transient response process that descends rapidly behind the peak value with the control light pulse, and be 280fs corresponding switching time.
Embodiment three: ultrafast Wavelength conversion devices
With the Ag-BaO laminated film is operation material structure Kerr-type photoswitch, and to export one group of wavelength by the Ke Er mirror locked mode titanium sapphire laser device of a multi-thread Argon ion laser synchronous pump be that 820nm, pulsewidth are that 120fs, repetition frequency are the control signal of the laser pulse sequence of 76MHz as photoswitch, by another Argon ion laser output wavelength is the input signal of the continuous laser beam of 514.5nm as photoswitch, and the two is with certain included angle incident and focus on Ag-BaO film surface same point.Because be placed with the orthogonal polaroid in polarization direction on the input signal light path before and after the Ag-BaO film respectively, the signal of output terminal is " 0 " before the control signal effect.When control signal effectively just is that 820nm, repetition frequency are the laser pulse sequence " 11111... " of 76MHz when acting on the Ag-BaO laminated film with wavelength, transient state appears in because of body in film under the excitation of each monopulse photon-induced refractive index change anisotropy relatively input continuous signal light " on-off " once.Like this, just can obtain one group of wavelength at output terminal is 514.5nm, and repetition frequency is the laser pulse sequence " 11111... " of 76MHz, realizes the wavelength Conversion of laser pulse sequence.When control signal is the coded pulse sequence (as " 1101011... ") that has customizing messages, can obtain having same coding but the laser pulse sequence that is different from the control signal wavelength at the output terminal of photoswitch.
Claims (7)
1. metal nanoparticle-semiconductor medium laminated film, it is characterized in that: a side that is deposited on transparent substrates, matrix is alkali metal oxide or the alkaline earth oxide semiconductor medium film of thickness between 100～200nm, wherein buries the noble metal nano particles that equally distributed diameter is 5～20nm.
2. metal nanoparticle as claimed in claim 1-semiconductor medium laminated film, the volume occupation rate that it is characterized in that metal nanoparticle in the described laminated film is 50%～60%.
3. metal nanoparticle as claimed in claim 1 or 2-semiconductor medium laminated film is characterized in that described alkali metal oxide is Cs
xO, 2≤x≤3.
4. metal nanoparticle as claimed in claim 1 or 2-semiconductor medium laminated film is characterized in that described alkaline earth oxide is BaO.
5. metal nanoparticle as claimed in claim 1 or 2-semiconductor medium laminated film is characterized in that described noble metal is selected from Au, Ag or Cu.
6. method for preparing the described metal nanoparticle of claim 1-semiconductor medium laminated film may further comprise the steps successively:
(1) side in transparent substrates deposits alkaline metal or earth alkali metal film under high vacuum condition, drops at 30% o'clock to the white light transmitance and ends;
(2) feed high purity oxygen gas and make alkaline metal or earth alkali metal film oxidation, recover substantially, obtain the semiconductor medium film to the white light transmitance;
(3) at semiconductor medium film surface depositing noble metal film;
(4) film that (3) are made carries out in the vacuum 100 ℃ of annealing in process more than a hour in the above and atmosphere 120 ℃ of half an hour successively.
7. completely optical kerr switch is characterized in that it being as kerr medium with the described metal nanoparticle of claim 1-semiconductor medium laminated film.
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