CN118209214A - Temperature detection circuit and chip - Google Patents
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Abstract
The application discloses a temperature detection circuit and a chip, wherein the temperature detection circuit comprises: the device comprises a temperature representation voltage generation module and an adjustment module, wherein the temperature representation voltage generation module is used for generating a temperature representation voltage, and the temperature representation voltage is related to temperature; the adjusting module is connected with the temperature representation voltage generating module, wherein the adjusting module generates corresponding adjusting output voltage based on the temperature representation voltage, and the dynamic range of the adjusting output voltage at unit temperature is larger than that of the temperature representation voltage at unit temperature. The application can improve the resolution of the temperature detection circuit and the detection precision.
Description
Technical Field
The present invention relates to the field of integrated circuits, and in particular, to a temperature detection circuit and a chip.
Background
In the application process of the integrated circuit, the performance of various devices is affected by temperature, in order to reduce the influence of temperature change on the performance of the devices, a mode of adding a temperature sensor is generally adopted to measure the temperature, and then the relevant parameters of the devices are configured according to the measured temperature so as to optimize the performance of the devices.
In actual practice, the inventors of the present application found that the dynamic range of the detected temperature-related quantity per unit temperature in the current temperature detection circuit scheme limits the detection accuracy.
Disclosure of Invention
The invention mainly solves the technical problems that: the temperature detection circuit and the chip can improve the resolution of the detection circuit and the detection precision.
In order to solve the technical problems, the invention adopts a technical scheme that: there is provided a temperature detection circuit including: the temperature characterization voltage generation module and the regulation module; the temperature representation voltage generation module is used for generating a temperature representation voltage, wherein the temperature representation voltage is related to temperature; the adjusting module is connected with the temperature representation voltage generating module, wherein the adjusting module generates corresponding adjusting output voltage based on the temperature representation voltage, and the dynamic range of the adjusting output voltage at unit temperature is larger than that of the temperature representation voltage at unit temperature.
In one embodiment of the application, the adjustment module comprises: an operational amplifier and a feedback loop; the first input end of the operational amplifier is connected with the temperature representation voltage generation module to receive the temperature representation voltage; the feedback loop receives the bias voltage and is connected with the second input end and the output end of the operational amplifier; the operational amplifier generates the corresponding regulated output voltage at the output end based on the temperature representation voltage and the feedback loop, and performs gain amplification on the dynamic range of the temperature representation voltage at unit temperature according to the gain parameter determined by the feedback loop.
In an embodiment of the application, the feedback loop comprises: a first resistor and a second resistor; one end of the first resistor is used for receiving the bias voltage, and the other end of the first resistor is connected with the second input end of the operational amplifier; one end of the second resistor is connected with a connection point between the first resistor and the second input end of the operational amplifier, and the other end of the second resistor is connected with the output end of the operational amplifier.
In an embodiment of the application, the gain parameter is determined by a ratio of a sum of resistance values of the first resistor and the second resistor to a resistance value of the first resistor.
In one embodiment of the present application, the regulated output voltage v temp is:
Wherein v ptat is a temperature characterization voltage, v com is a bias voltage, R 1 is a resistance value of the first resistor, and R 2 is a resistance value of the second resistor.
In an embodiment of the application, the feedback loop comprises: a first capacitor and a second capacitor; one end of the first capacitor is connected to the bias voltage through a first switch and connected to the ground voltage through a second switch; the other end of the first switch is connected to the second input end of the operational amplifier through a third switch, and is connected to the ground voltage through a fourth switch; one end of the second capacitor is connected with the second input end of the operational amplifier, the other end of the second capacitor is connected with the output end of the operational amplifier, and a fifth switch is connected in parallel between two ends of the second capacitor; wherein the second switch, the fourth switch, and the fifth switch receive a first clock signal to be turned on/off based on the first clock signal, and the first switch and the third switch receive a second clock signal to be turned on/off based on the second clock signal.
In an embodiment of the present application, the first clock signal and the second clock signal are mutually inverted clock signals.
In an embodiment of the application, the gain parameter is determined by a ratio of a sum of capacitance values of the first and second capacitances to a capacitance value of the second capacitance.
In one embodiment of the present application, the regulated output voltage v temp is:
Wherein v ptat is a temperature characterization voltage, v com is the bias voltage, C 1 is the capacitance of the first capacitor, and C 2 is the capacitance of the second capacitor.
In one embodiment of the present application, the temperature characterization voltage generation module includes: a bandgap reference source and a third resistor; the bandgap reference source is used for generating a bandgap reference current, and the bandgap reference current is related to temperature; the third resistor is connected between the band gap reference source and the ground voltage, wherein a node between the band gap reference source and the third resistor is used as an output end of the temperature representation voltage generation module, and the third resistor is used for converting the band gap reference current into the temperature representation voltage and outputting the temperature representation voltage at the output end of the temperature representation voltage generation module.
In order to solve the technical problems, the application adopts another technical scheme that: a chip is provided, which includes the temperature detection circuit described above.
Different from the prior art, the temperature detection circuit provided by the application comprises a temperature representation voltage generation module and an adjustment module; the temperature characterization voltage generation module is used for generating a temperature characterization voltage, and the temperature characterization voltage is related to temperature; the adjusting module is connected with the temperature representation voltage generating module, wherein the adjusting module generates corresponding adjusting output voltage based on the temperature representation voltage, and the dynamic range of the adjusting output voltage at unit temperature is larger than that of the temperature representation voltage at unit temperature. In other words, the effective dynamic range of the detected temperature related quantity is increased by adjusting the temperature representation voltage with the originally smaller dynamic range into the adjusting output voltage with the larger dynamic range, so that the temperature detection circuit can detect the temperature related quantity with the larger dynamic range in unit temperature, the resolution of the temperature detection circuit can be improved, and the detection precision is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:
FIG. 1 is a schematic diagram of an embodiment of a temperature detection circuit according to the present application;
FIG. 2 is a schematic diagram of another embodiment of a temperature detection circuit according to the present application;
FIG. 3 is a schematic diagram of an analysis of temperature characterization voltage and regulated output voltage versus temperature in accordance with the present application;
FIG. 4 is a schematic diagram of a test analysis of a temperature detection circuit according to the present application;
Fig. 5 is a schematic diagram of a temperature detection circuit according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Reference in the specification to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
The steps in the embodiments of the present application are not necessarily processed according to the described step sequence, and the steps in the embodiments may be rearranged selectively according to the requirement, or steps in the embodiments may be deleted, or steps in the embodiments may be added, where the description of the steps in the embodiments of the present application is only an optional sequential combination, and does not represent all the sequential combinations of steps in the embodiments of the present application, and the sequence of steps in the embodiments should not be considered as limiting the present application.
The term "and/or" in embodiments of the present application is meant to include any and all possible combinations of one or more of the associated listed items. Also described are: as used in this specification, the terms "comprises/comprising" and/or "includes" specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, and/or components, and/or groups thereof.
The terms "first," "second," and the like in this disclosure are used for distinguishing between different objects and not for describing a particular sequential order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
In addition, although the terms "first," "second," etc. may be used several times in the present application to describe various data (or various elements or various applications or various instructions or various operations), etc., these data (or elements or applications or instructions or operations) should not be limited by these terms. These terms are only used to distinguish one data (or element or application or instruction or operation) from another data (or element or application or instruction or operation). For example, the first position information may be referred to as second position information, and the second position information may be referred to as first position information, only the ranges included therein being different, without departing from the scope of the present application, the first position information and the second position information being all sets of various position and orientation information, only that they are not identical sets of position and orientation information.
The temperature-dependent quantity as the detected quantity in the current temperature detection circuit, particularly the temperature detection circuit of the chip, is proportional to the absolute temperature, and the lower limit of the normal operating temperature range of the chip is generally far greater than the absolute zero degree, so that part of the dynamic range as the temperature-dependent quantity as the detected quantity does not appear in the operating temperature range of the chip. Under the condition of a certain upper voltage limit, the dynamic range of the temperature related quantity at the unit temperature is small, and the detection precision of the current temperature detection circuit is limited.
Therefore, a temperature detection circuit is provided, and the corresponding temperature related quantity is regulated by the regulating module, so that the dynamic range of the temperature related quantity at unit temperature is larger than that of the temperature related quantity in the prior art.
Referring to fig. 1, fig. 1 is a schematic diagram of a temperature detection circuit according to an embodiment of the application. The temperature detection circuit is generally used for detecting the temperature of the memory chip in the design of an integrated circuit.
As shown in fig. 1, the temperature detection circuit of the present application includes: a temperature-representative voltage generation module 100 and a regulation module 200. Wherein the temperature-characterization voltage generation module 100 is configured to generate a temperature-characterization voltage v ptat, and the temperature-characterization voltage v ptat is associated with temperature; the adjusting module 200 is connected to the temperature-characterization voltage generating module 100, wherein the adjusting module 200 generates a corresponding adjusting output voltage v temp based on the temperature-characterization voltage v ptat, and the dynamic range of the adjusting output voltage v temp at the unit temperature is greater than the dynamic range of the temperature-characterization voltage v ptat at the unit temperature.
The unit temperature can be the working temperature of the device or a preset temperature interval; for example, the working temperature range of the industrial-level chip is-40-85 ℃, the absolute temperature is 233-358 k, but the voltage corresponding to 0-233 k is not in the working temperature range of the industrial chip, the voltage corresponding to 0-233 k cannot appear in the actual working of the industrial chip, namely, the dynamic range of the voltage corresponding to the temperature related quantity which is obtained in the current temperature detection circuit and is used as the detected quantity is smaller, and in this case, the detection of the temperature related quantity in a larger range cannot be covered, so that the dynamic range of the output voltage v temp at the unit temperature is regulated to be larger than the dynamic range of the temperature characterization voltage v ptat at the unit temperature, the temperature detection circuit can detect the temperature related quantity in a larger dynamic range within the unit temperature, the resolution of the temperature detection circuit can be improved, and the detection precision can be improved.
In an application scene, the temperature related quantity with a larger dynamic range can meet the detection of a temperature detection circuit with higher resolution, and further the detection precision is improved.
In another application scenario, on the premise that the resolution of the temperature detection circuit is unchanged, the temperature correlation quantity of a larger dynamic range can be reduced, and the requirement on the manufacturing precision of the detection circuit can be reduced.
The resolution of the temperature detection circuit refers to the resolution of temperature, and the accuracy of the temperature detection circuit affects the accuracy of electrical values such as voltage and current; for example, if the resolution index of the temperature detection circuit is 1K, and the resolution index is fixed, the adjustment module 200 increases the voltage range corresponding to the resolution index 1K from 5mV to 10mV, so that the manufacturing accuracy of the temperature detection circuit is correspondingly widened, that is, the requirement on the manufacturing accuracy of the detection circuit is reduced.
Referring to fig. 2, fig. 2 is a schematic diagram of a temperature measurement circuit according to another embodiment of the application. As shown in fig. 2, the temperature-dependent voltage generation module 100 includes a bandgap reference source 110 and a third resistor R3. The bandgap reference source 110 is used for generating a bandgap reference current I ptat, and the bandgap reference current I ptat is related to temperature; the third resistor R3 is connected between the bandgap reference source 110 and the ground voltage, a node between the bandgap reference source 110 and the third resistor R3 is used as an output end of the temperature-characterization voltage generating module 100, and the third resistor R3 is used for converting the bandgap reference current I ptat into the temperature-characterization voltage v ptat and outputting the temperature-characterization voltage v ptat at the output end of the temperature-characterization voltage generating module 100.
The third resistor R3 is connected between the bandgap reference source 110 and the ground voltage to form a voltage divider circuit, and the bandgap reference current I ptat generated by the bandgap reference source 110 is led into the third resistor R3, so that the corresponding temperature characterization voltage v ptat can be acquired on the third resistor.
As shown in fig. 2, in one embodiment, the conditioning module 200 may include an operational amplifier 210 and a feedback loop 220; wherein a first input terminal of the operational amplifier 210 is connected to the temperature-characterization voltage generation module 100 to receive the temperature-characterization voltage v ptat; the feedback loop 220 receives the bias voltage v com, and the feedback loop 220 connects the second input of the operational amplifier 210 and the output of the operational amplifier 210. The operational amplifier 210 generates a corresponding regulated output voltage v temp at the output of the operational amplifier 210 based on the temperature characterization voltage v ptat and the feedback loop 220, and performs gain amplification on the dynamic range of the temperature characterization voltage v ptat at a unit temperature according to the gain parameter determined by the feedback loop 220.
The first input terminal of the operational amplifier 210 is a positive input terminal, and the second input terminal of the operational amplifier 210 is a negative input terminal.
Specifically, the gain parameter determined by the feedback loop 220 is multiplied by a value obtained by subtracting the fixed bias voltage from the temperature characterization voltage v ptat, so that the gain amplified result corresponds to the regulated output voltage v temp.
As shown in fig. 2, in one embodiment, the feedback loop 220 may include: a first resistor R1 and a second resistor R2; one end of the first resistor R1 is used for receiving the bias voltage v com, and the other end is connected with the second input end of the operational amplifier 210; one end of the second resistor R2 is connected to a connection point between the first resistor R1 and the second input terminal of the operational amplifier 210, and the other end is connected to the output terminal of the operational amplifier 210.
In some embodiments, the gain parameter is determined by the ratio of the sum of the resistance value R 1 of the first resistor R1 and the resistance value R 2 of the second resistor R2 to the resistance value R 1 of the first resistor R1.
Specifically, the first resistor R1 is connected in series with the second resistor R2, so that the current passing through the first resistor R1 and the second resistor R2 is equal, and the following formula can be adopted:
the corresponding gain parameters can be obtained according to the resistance values of the first resistor R1 and the second resistor R2 Gain amplification of the dynamic range of the temperature-dependent voltage v ptat at unity temperature by the gain parameter, i.e. by the gain parameter/>And (3) calculating a corresponding product result by a numerical value obtained by subtracting the fixed bias voltage v com from the temperature characterization voltage v ptat, and obtaining a gain amplified result which is the regulated output voltage v temp.
Reference is made in particular to the following formula:
the regulated output voltage v temp is:
wherein v ptat is the temperature characterization voltage, v com is the bias voltage, R 1 is the resistance value of the first resistor, R 2 is the resistance value of the second resistor, Is a gain parameter.
The specific working principle is as follows: in the embodiment of the present application, after the bandgap reference source 110 generates a bandgap reference current I ptat associated with temperature, since the node between the bandgap reference source 110 and the third resistor R3 is used as the output terminal of the temperature-representing voltage generating module 100, the third resistor R3 can convert the bandgap reference current I ptat into the temperature-representing voltage v ptat and output the temperature-representing voltage v ptat at the output terminal of the temperature-representing voltage generating module 100; the temperature characterization voltage v ptat is input to the operational amplifier 210 through the positive input of the operational amplifier 210.
That is, one end of the first resistor R1 receives the bias voltage v com, the other end is connected to the negative input end of the operational amplifier 210, one end of the second resistor R2 is connected to the negative input end of the operational amplifier 210, and the other end of the second resistor R2 is connected to the output end of the operational amplifier 210, so that the connection point between the first resistor R1 and the second resistor R2 can be used as a voltage input end for inputting the feedback voltage to the negative input end of the operational amplifier 210.
In some embodiments, since the operational amplifier 210 is connected to the feedback loop 220 to form a negative feedback, the high gain of the operational amplifier 210 can ensure that the input voltage at the negative input terminal of the operational amplifier 210 is infinitely close to the temperature characterization voltage v ptat at the positive input terminal thereof.
The fixed voltage subtracted by the temperature characterization voltage v ptat needs to be smaller than the temperature characterization voltage v ptat corresponding to the lower limit of the working temperature; the gain parameter can realize dynamic change according to specific resistance values of the first resistor R1 and the second resistor R2, and the gain parameter can be used for carrying out gain amplification on the temperature representation voltage v ptat at a unit temperature so that the dynamic range of the regulated output voltage v temp at the unit temperature is larger than the dynamic range of the temperature representation voltage v ptat at the unit temperature; the larger the gain parameter amplification factor is, the larger the dynamic range corresponding to the regulated output voltage v temp at the unit temperature is, the upper limit of the dynamic range corresponding to the regulated output voltage v temp at the unit temperature is limited by the power supply voltage and the circuit structure, and the temperature characterization voltage v ptat of the temperature detection circuit in the prior art is also limited by the same. Therefore, by adjusting the resistance value R 1 of the first resistor R1, the resistance value R 2 of the second resistor R2, and the bias voltage v com, the temperature-representing voltage v ptat can be subjected to gain amplification in the dynamic range of unit temperature, and the gain amplification result corresponds to the adjusted output voltage v temp, so that the dynamic range of the adjusted output voltage v temp in unit temperature is greater than the dynamic range of the temperature-representing voltage v ptat in unit temperature. As shown in particular in fig. 3, the dynamic range of the regulated output voltage v temp obtained in the manner described above is greater than the dynamic range of the temperature characterization voltage v ptat.
Referring to fig. 4, the temperature detection circuit is tested, and the analysis result of the test is shown in fig. 4. In HLMC-19 nm process, the operating temperature range is set to-40-105 ℃, the bias voltage V com is set to 2V, and the resistance value R 1 of the first resistor R1 is equal to the resistance value R 2 of the second resistor R2, i.e., R 1＝R2 =20kohm. The temperature characterization voltage V ptat ranges from 1.203V to 1.935V, the dynamic range is 0.732V, and the dynamic range corresponding to each temperature value is about 5mV; the range of the regulated output voltage V temp is 0.406-1.870V, the dynamic range is 1.464V, the dynamic range corresponding to each temperature value is about 10mV, the voltage value corresponding to the working temperature range of the chip in actual work is in the voltage range of the regulated output voltage V temp, and the dynamic range of the regulated output voltage V temp is doubled compared with the dynamic range of the temperature representation voltage V ptat.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a temperature detection circuit according to another embodiment of the application. As shown in fig. 5, the feedback loop 220 may include: a first capacitor C1 and a second capacitor C2; one end of the first capacitor C1 is connected to the bias voltage v com through the first switch K1, and is connected to the ground voltage through the second switch K2; the other end of the first capacitor C1 is connected to the second input terminal of the operational amplifier 210 through the third switch K3, and is connected to the ground voltage through the fourth switch K4. One end of the second capacitor C2 is connected to the second input end of the operational amplifier 210, the other end of the second capacitor C2 is connected to the output end of the operational amplifier 210, and a fifth switch K5 is connected in parallel between two ends of the second capacitor C2. The second switch K2, the fourth switch K4 and the fifth switch K5 receive the first clock signal Φ1 and are turned on or off based on the first clock signal Φ1; the first switch K1 and the third switch K3 receive the second clock signal Φ2, and are turned on or off based on the second clock signal Φ2.
In some embodiments, the first switch K1, the second switch K2, the third switch K3, the fourth switch K4, and the fifth switch K5 may be MOS transistors, and the corresponding conduction loop is implemented by two pulse control with the same frequency and opposite phase of the dual-phase clock, that is, by controlling the corresponding switches through the first clock signal Φ1 and the second clock signal Φ2 respectively.
When the second clock signal Φ2 is at a high level and the first clock signal Φ1 is at a low level, the regulated output voltage v temp is effective in a phase corresponding to the second clock signal Φ2, the temperature detection also needs to be completed in the phase, and the phase corresponding to the first clock signal Φ1 is used for discharging the charge on the capacitor to complete the initialization of the circuit state.
Specifically, when the second clock signal Φ2 is at a high level and the first clock signal Φ1 is at a low level, the first switch K1 and the third switch K3 are turned on, the second switch K2, the fourth switch K4 and the fifth switch K5 are turned off, that is, one end of the first capacitor C1 is connected to the bias voltage v com through the first switch K1, the other end of the first capacitor C1 is connected to the negative input end of the operational amplifier 210 through the third switch K3, one end of the second capacitor C2 is connected to the negative input end of the operational amplifier 210, and the other end of the second capacitor C2 is connected to the output end of the operational amplifier 210; when the second clock signal Φ2 is at a low level and the first clock signal Φ1 is at a high level, the first switch K1 and the third switch K3 are turned off, and the second switch K2, the fourth switch K4 and the fifth switch K5 are turned on, which is equivalent to that one end of the first capacitor C1 is connected to the ground voltage through the second switch K2, the other end of the first capacitor C1 is connected to the ground voltage through the fourth switch K4 to discharge the charge of the first capacitor C1, and the second capacitor C2 is connected in parallel with the fifth switch K5 to discharge the charge of the second capacitor C2, thereby completing the state initialization of the temperature detection circuit.
The specific working principle is as follows: in the embodiment of the present application, after the bandgap reference source 110 generates a bandgap reference current I ptat associated with temperature, since the node between the bandgap reference source 110 and the third resistor R3 is used as the output terminal of the temperature-representing voltage generating module 100, the third resistor R3 can convert the bandgap reference current I ptat into the temperature-representing voltage v ptat and output the temperature-representing voltage v ptat at the output terminal of the temperature-representing voltage generating module 100; the temperature characterization voltage v ptat is input to the operational amplifier 210 through the positive input of the operational amplifier 210.
That is, when the first switch K1 and the third switch K3 receive the second clock signal Φ2 and are turned on based on the second clock signal Φ2, the voltage at one end of the first capacitor C1 is the bias voltage v com, the other end of the first capacitor C1 is connected to the negative input end of the operational amplifier 210, one end of the second capacitor C2 is connected to the negative input end of the operational amplifier 210, the other end of the second capacitor C2 is connected to the output end of the operational amplifier 210, and the voltage at the other end is the regulated output voltage v temp of the operational amplifier 210.
Since the operational amplifier 210 is connected to the feedback loop 220 to form a negative feedback form, the high gain of the operational amplifier 210 can ensure that the negative input terminal of the operational amplifier 210 is infinitely close to the temperature characterization voltage v ptat at the positive input terminal thereof.
In some embodiments, the gain parameter is determined by the ratio of the sum of the capacitance of the first capacitor C1 and the capacitance of the second capacitor C2 to the capacitance of the second capacitor C2.
Specifically, if the first capacitor C1 is connected in series with the second capacitor C2, the current passing through the first capacitor C1 and the second capacitor C2 are equal, and the following formula may be given:
wherein, Z1 is the impedance of the first capacitor, and Z2 is the impedance of the second capacitor.
In the alternating current of the capacitive element, only the capacitor C is included in the impedance, and the resistor R and the inductor L of the impedance expression are removed, so that:
Simplified by the formula, there is therefore the following equation:
The corresponding gain parameter can be obtained according to the capacitance values of the first capacitor C1 and the second capacitor C2 as Gain amplification of the dynamic range of the temperature characterization voltage v ptat at unity temperature by a gain parameter, i.e. by a gain parameter ofAnd (3) calculating a corresponding product result by a numerical value obtained by subtracting the fixed bias voltage v com from the temperature characterization voltage v ptat, and obtaining a gain amplified result which is the regulated output voltage v temp.
Reference is made in particular to the following formula:
the regulated output voltage v temp is:
Wherein v ptat is the temperature characterization voltage, v com is the bias voltage, C 1 is the capacitance of the first capacitor, and C 2 is the capacitance of the second capacitor.
Therefore, when the capacitance value C 1 of the first capacitor C1, the capacitance value C 2 of the second capacitor and the bias voltage v com are adjusted, the dynamic range of the adjusted output voltage v temp at the unit temperature is larger than the dynamic range of the temperature characterization voltage v ptat at the unit temperature, the temperature detection circuit can detect the temperature related quantity with a larger dynamic range within the unit temperature, the resolution of the temperature detection circuit can be improved, and the detection precision is improved.
The application also provides a chip which comprises the temperature detection circuit.
The above technical scheme provides a temperature detection circuit, and temperature detection circuit includes: a temperature-representative voltage generation module 100 and a regulation module 200; the temperature characterization voltage generation module 100 is configured to generate a temperature characterization voltage v ptat, where the temperature characterization voltage v ptat is associated with a temperature; the adjusting module 200 is connected with the temperature representation voltage generating module 100, wherein the adjusting module 200 generates a corresponding adjusting output voltage v temp based on the temperature representation voltage v ptat, and the dynamic range of the adjusting output voltage v temp at the unit temperature is larger than that of the temperature representation voltage v ptat at the unit temperature; that is, the application can make the dynamic range of the temperature representation voltage v ptat at the unit temperature perform gain amplification by adjusting the device parameters corresponding to the adjusting module 200, so that the dynamic range of the adjusting output voltage v temp at the unit temperature is larger than the dynamic range of the temperature representation voltage v ptat at the unit temperature, the temperature detection circuit can detect the temperature related quantity of the larger dynamic range within the unit temperature, the resolution of the temperature detection circuit can be improved, and the detection precision is improved.
In the several embodiments provided in the present invention, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. For example, the system embodiments described above are merely illustrative, e.g., the division of the modules or units is merely a logical functional division, and there may be additional divisions when actually implemented, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the embodiment.
In addition, each functional unit in each embodiment of the present invention may be integrated in one processing unit, each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in essence or a part contributing to the prior art or all or part of the technical solution in the form of a software product stored in a storage medium, including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) or a processor (processor) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a usb disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
The foregoing description is only of embodiments of the present invention, and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the present invention.
Claims (11)
1. A temperature detection circuit, comprising:
The temperature representation voltage generation module is used for generating a temperature representation voltage, wherein the temperature representation voltage is related to temperature;
The adjusting module is connected with the temperature representation voltage generating module, wherein the adjusting module generates corresponding adjusting output voltage based on the temperature representation voltage, and the dynamic range of the adjusting output voltage at unit temperature is larger than that of the temperature representation voltage at unit temperature.
2. The temperature detection circuit of claim 1, wherein the conditioning module comprises:
The first input end of the operational amplifier is connected with the temperature representation voltage generation module to receive the temperature representation voltage;
a feedback loop receiving the bias voltage and connecting the second input terminal and the output terminal of the operational amplifier;
The operational amplifier generates the corresponding regulated output voltage at the output end based on the temperature representation voltage and the feedback loop, and performs gain amplification on the dynamic range of the temperature representation voltage at unit temperature according to the gain parameter determined by the feedback loop.
3. The temperature detection circuit of claim 2, wherein the feedback loop comprises:
One end of the first resistor is used for receiving the bias voltage, and the other end of the first resistor is connected with the second input end of the operational amplifier;
And one end of the second resistor is connected with a connection point between the first resistor and the second input end of the operational amplifier, and the other end of the second resistor is connected with the output end of the operational amplifier.
4. A temperature detecting circuit according to claim 3, wherein,
The gain parameter is determined by a ratio of a sum of resistance values of the first resistor and the second resistor to a resistance value of the first resistor.
5. A temperature detecting circuit according to claim 3, wherein,
The regulated output voltage is:
Wherein v temp is the regulated output voltage, v ptat is the temperature characterization voltage, v com is the bias voltage, R 1 is the resistance value of the first resistor, and R 2 is the resistance value of the second resistor.
6. The temperature detection circuit of claim 2, wherein the feedback loop comprises:
A first capacitor having one end connected to the bias voltage through a first switch and connected to a ground voltage through a second switch; the other end of the first switch is connected to the second input end of the operational amplifier through a third switch, and is connected to the ground voltage through a fourth switch;
one end of the second capacitor is connected with the second input end of the operational amplifier, the other end of the second capacitor is connected with the output end of the operational amplifier, and a fifth switch is connected in parallel between two ends of the second capacitor;
Wherein the second switch, the fourth switch, and the fifth switch receive a first clock signal to be turned on/off based on the first clock signal, and the first switch and the third switch receive a second clock signal to be turned on/off based on the second clock signal.
7. The temperature detecting circuit according to claim 6, wherein,
The first clock signal and the second clock signal are mutually inverse clock signals.
8. The temperature detecting circuit according to claim 6, wherein,
The gain parameter is determined by a ratio of a sum of capacitance values of the first and second capacitances to a capacitance value of the second capacitance.
9. The temperature detecting circuit according to claim 6, wherein,
The regulated output voltage is:
Wherein v temp is an adjustment output voltage, v ptat is a temperature representation voltage, v com is the bias voltage, C 1 is the capacitance value of the first capacitor, and C 2 is the capacitance value of the second capacitor.
10. The temperature detection circuit of claim 1, wherein the temperature-representative voltage generation module comprises:
a bandgap reference source for generating a bandgap reference current, wherein the bandgap reference current is temperature dependent;
And the third resistor is connected between the band gap reference source and the ground voltage, wherein a node between the band gap reference source and the third resistor is used as an output end of the temperature representation voltage generation module, and the third resistor is used for converting the band gap reference current into the temperature representation voltage and outputting the temperature representation voltage at the output end of the temperature representation voltage generation module.
11. A chip comprising a temperature detection circuit according to any one of claims 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211631249.3A CN118209214A (en) | 2022-12-16 | 2022-12-16 | Temperature detection circuit and chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211631249.3A CN118209214A (en) | 2022-12-16 | 2022-12-16 | Temperature detection circuit and chip |
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| CN118209214A true CN118209214A (en) | 2024-06-18 |
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| CN202211631249.3A Pending CN118209214A (en) | 2022-12-16 | 2022-12-16 | Temperature detection circuit and chip |
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| CN (1) | CN118209214A (en) |
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