CN118191542A - Avalanche photodiode calibration method, device, equipment and readable storage medium - Google Patents
Avalanche photodiode calibration method, device, equipment and readable storage medium Download PDFInfo
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Abstract
The application discloses an avalanche photodiode calibration method, an avalanche photodiode calibration device, electronic equipment and a readable storage medium, wherein the avalanche photodiode calibration method comprises the following steps of: placing the APDs to be calibrated in a non-light temperature control box, and enabling the APDs to be calibrated to be in environments with different temperatures sequentially according to a preset temperature regulation sequence; respectively applying gradually increased reverse bias voltages to APDs to be calibrated at each temperature, and recording by using a temperature measuring resistor and a dark current detection circuit to obtain actual reverse bias voltages and actual dark currents under each temperature condition; carrying out dotting by taking the actual reverse bias voltage as an abscissa and taking the voltage integral value of the actual dark current value through the active integration circuit as an ordinate, and drawing to obtain a target curve graph; determining a horizontal axis value corresponding to a vertical axis inflection point of a curve representing each temperature in the target graph as an actual breakdown voltage at the corresponding temperature; based on the ratio between the reverse bias voltage and the breakdown voltage and the actual breakdown voltage at each temperature, the corresponding actual reverse bias voltage is calculated to complete the calibration of the reverse bias voltage.
Description
Technical Field
The present application relates to the field of request processing, and in particular, to an avalanche photodiode calibration method, an avalanche photodiode calibration device, an electronic device, and a computer readable storage medium.
Background
The avalanche photodiode (AVALANCHE PHOTON DIODE, APD) has high sensitivity and internal gain, and uses the directional effect of photo-generated carriers in a strong electric field to generate an avalanche effect so as to obtain the gain of photocurrent, and realize photoelectric conversion and amplification of weak signals. The current gain of an APD cell is generally expressed as a multiplication factor M, defined as the ratio of the photocurrent when a multiplication occurs to the photocurrent when no multiplication occurs. APDs can be applied in the field of optoelectronics, including distributed temperature measurement, laser ranging, etc.
The current gain of an APD is generally expressed as a multiplication factor M: Where V is the bias voltage applied to the APD, VB is the breakdown voltage of the APD, and n is the coefficient related to the APD, depending on the semiconductor material, doping profile, radiation wavelength, etc. The multiplication factor of the APD is the most important parameter in its application, and the magnitude of the breakdown voltage and the magnitude of the applied reverse bias voltage both affect the magnitude of the multiplication factor. From the above formula, when VB is a fixed value, V is larger, multiplication factor is larger, but in practical application, the optimal working voltage cannot exceed VB, otherwise breakdown occurs; the value of V is also not too small, without avalanche multiplication effects. The value of the reverse bias voltage of the APD is typically chosen to be slightly less than the breakdown voltage VB. The breakdown voltage VB is related to the operating temperature of the device, and becomes large when the temperature increases. Therefore, to ensure the same current gain at different operating temperatures, different reverse biases are applied to the APD transistors to prevent problems of unstable APD transistor gain or excessive bias burn-out of the APD.
To ensure that APDs operate at optimum bias, the reverse bias voltages of APDs need to be calibrated, and APDs need to be guaranteed to operate at optimum bias at different temperatures. The breakdown voltage of an avalanche photodiode APD is not fixed, and can be approximated as a proportional relationship between the breakdown voltage and the temperature of the APD. However, because the scaling factor of the consistency problem of the APD is not necessarily accurate, the APD needs to be calibrated, breakdown voltages of the APD at different temperatures can be obtained in the calibration process, and then the reverse bias voltage control module outputs the reverse bias voltage according to a certain algorithm, so that the APD is ensured to work under the optimal reverse bias voltage in the full temperature range.
In order to calibrate the optimal reverse bias voltage, the first prior art uses an error code analyzer to observe the error code rate, and adjusts and outputs the reverse bias voltage through a DAC. The error rate under different M values is tested by using a slightly strong test signal, and the point with the minimum error rate is the optimal M value, so that the optimal reverse bias voltage can be obtained. However, the test signal strength is required to be proper, the situation that the error rate is extremely low can occur, even the error rate is not observed for a long time, the situation that the error rate is relatively small can occur, and the optimal M value cannot be selected. The scheme has the further disadvantage that only the optimal reverse bias voltage at a single temperature can be tested, and the optimal reverse bias voltage in a wide temperature range can not be tested; in the second prior art, the breakdown voltage VBR obtained by testing the APD manufacturer is set to be the optimal reverse bias voltage (or other coefficients), and the optimal reverse bias voltages at different temperatures are calculated according to the linear scaling coefficients provided by the manufacturer. This scheme relies on the manufacturer to test the accuracy of the breakdown voltage VBR, which once inaccurate, is also inaccurate. If the consistency of the APDs of the manufacturer is not good, large errors can be caused, and if the linearity of the temperature breakdown voltage is not ideal, the variation of the temperature can also cause the difference of the receiving sensitivity of the APDs.
Therefore, how to overcome the technical drawbacks of the solutions provided by the above prior art is a problem to be solved by those skilled in the art.
Disclosure of Invention
The application aims to provide an avalanche photodiode calibration method, an avalanche photodiode calibration device, electronic equipment and a computer readable storage medium.
To achieve the above object, the present application provides in a first aspect an avalanche photodiode calibration method, comprising: placing the APDs to be calibrated in a non-light temperature control box, and controlling the non-light temperature control box to enable the APDs to be calibrated to be in environments with different temperatures in sequence according to a preset temperature regulation sequence; wherein, no light temperature control box is used for providing each temperature environment and no light environment within the preset temperature range; respectively applying gradually increased reverse bias voltage to APDs to be calibrated which are at each temperature and under the condition of no light, and recording by using a preset temperature measuring resistor and a dark current detection circuit to obtain actual reverse bias voltage and actual dark current under each temperature condition within a preset temperature range; carrying out dotting by taking the actual reverse bias voltage as an abscissa and taking the voltage integral value of the actual dark current value through the active integration circuit as an ordinate, and drawing a target graph based on a dotting result; determining a horizontal axis value corresponding to a vertical axis inflection point of a curve representing each temperature in the target curve graph as an actual breakdown voltage of the APD to be calibrated at the corresponding temperature; calculating to obtain the actual reverse bias voltage of the APD to be calibrated at different temperatures based on the preset proportion between the reverse bias voltage and the breakdown voltage and the actual breakdown voltage at each temperature; calibration of the APD reverse bias voltage to be calibrated is accomplished based on the actual reverse bias voltage at each temperature.
In some other embodiments of the first aspect, controlling the non-optical temperature control box to sequentially bring APDs to be calibrated to environments of different temperatures in a preset temperature regulation sequence includes:
The control of the non-light temperature control box is carried out according to the temperature change sequence from low temperature to high temperature, and the control of the non-light temperature control box is carried out for a period of time corresponding to the temperature at each temperature; wherein the time period corresponding to each temperature is at least capable of completing detection of reverse bias voltage and dark current of the APD to be calibrated at the corresponding temperature.
In some other embodiments of the first aspect, applying progressively increasing reverse bias voltages to the APDs to be calibrated at each temperature and in the absence of light, respectively, to generate breakdown currents comprises:
And respectively boosting the voltage of the APD to be calibrated at each temperature under the no-light condition through a BOOST circuit to supply power to the high-voltage operational amplifier, changing the output DAC voltage through a DAC chip in a mode of adjusting the output coding value, supplying the DAC voltage to the input end of the high-voltage operational amplifier to enable the high-voltage operational amplifier to output reverse bias voltage which is gradually increased within a preset voltage range, and applying the output reverse bias voltage to the APD to be calibrated to enable the dark current flowing through the APD to be gradually increased until breakdown of the APD to be calibrated generates breakdown current.
In some other embodiments of the first aspect, the calculating of the actual reverse bias voltage of the APD to be calibrated at different temperatures based on the preset ratio between the reverse bias voltage and the breakdown voltage to be maintained and the actual breakdown voltage at each temperature includes:
In response to the ratio between reverse bias voltage and breakdown voltage being maintained at 95%, 95% of the voltage value of the actual breakdown voltage of the APD to be calibrated at different temperatures is taken as the corresponding actual reverse bias voltage.
In some other embodiments of the first aspect, calibrating the APD reverse bias voltage to be calibrated based on the actual reverse bias voltage at each temperature includes:
Determining target coding values of DAC chips corresponding to actual reverse bias voltages at all temperatures;
And writing target coding values corresponding to the temperatures into a controller of a calibration device for calibrating the APDs to be calibrated.
In some other embodiments of the first aspect, dotting is performed with an actual reverse bias voltage as an abscissa and a voltage integral value of an actual dark current value through the active integration circuit as an ordinate, and the target graph is plotted based on the dotting result, including:
Taking the actual reverse bias voltage as an abscissa, carrying out integration processing on the voltage obtained in a period of time after the breakdown current in the actual dark current passes through a preset resistor in an active integration circuit, and taking the value obtained after the integration processing as an ordinate to carry out dotting;
fitting the obtained dotting result, and drawing to obtain a target curve graph.
To achieve the above object, the present application provides in a second aspect an avalanche photodiode calibration apparatus, comprising: the first unit is configured to place the APDs to be calibrated in a non-light temperature control box and control the non-light temperature control box to enable the APDs to be calibrated to be in environments with different temperatures in sequence according to a preset temperature regulation sequence; wherein, no light temperature control box is used for providing each temperature environment and no light environment within the preset temperature range; the second unit is configured to apply gradually increased reverse bias voltages to APDs to be calibrated which are at each temperature and under the dark condition respectively to generate breakdown currents, and record the actual reverse bias voltages and the actual dark currents under each temperature condition within a preset temperature range by utilizing a preset temperature measuring resistor and a dark current detection circuit; a third unit configured to plot points with the actual reverse bias voltage as an abscissa and the voltage integral value of the actual dark current value through the active integration circuit as an ordinate, and to draw a target graph based on the result of the point plot; a fourth unit configured to determine a horizontal axis value corresponding to a vertical axis inflection point of a curve representing each temperature in the target graph as an actual breakdown voltage of the APD to be calibrated at the corresponding temperature; a fifth unit configured to calculate an actual reverse bias voltage of the APD to be calibrated at different temperatures based on a preset ratio between the reverse bias voltage and the breakdown voltage to be maintained and the actual breakdown voltage at each temperature; a sixth unit configured to complete calibration of the APD reverse bias voltage to be calibrated based on the actual reverse bias voltages at the respective temperatures.
In some other embodiments of the second aspect, the first unit comprises a first subunit configured to control the non-light temperature control box to sequentially subject the APD to be calibrated to environments of different temperatures in a preset temperature regulation sequence, the first subunit may be further configured to:
The control of the non-light temperature control box is carried out according to the temperature change sequence from low temperature to high temperature, and the control of the non-light temperature control box is carried out for a period of time corresponding to the temperature at each temperature; wherein the time period corresponding to each temperature is at least capable of completing detection of reverse bias voltage and dark current of the APD to be calibrated at the corresponding temperature.
In some other embodiments of the second aspect, the second cell comprises a second subunit configured to apply progressively increasing reverse bias voltages to each APD to be calibrated at each temperature and in the absence of light, the second subunit being further configured to:
And respectively boosting the voltage of the APD to be calibrated at each temperature under the no-light condition through a BOOST circuit to supply power to the high-voltage operational amplifier, changing the output DAC voltage through a DAC chip in a mode of adjusting the output coding value, supplying the DAC voltage to the input end of the high-voltage operational amplifier to enable the high-voltage operational amplifier to output reverse bias voltage which is gradually increased within a preset voltage range, and applying the output reverse bias voltage to the APD to be calibrated to enable the dark current flowing through the APD to be gradually increased until breakdown of the APD to be calibrated generates breakdown current.
In some other embodiments of the second aspect, the second cell includes a third sub-cell configured to calculate an actual reverse bias voltage of the APD to be calibrated at a different temperature based on a preset ratio between reverse bias voltage and breakdown voltage to be maintained and the actual breakdown voltage at each temperature, the third self-cell being further configured to:
In response to the ratio between reverse bias voltage and breakdown voltage being maintained at 95%, 95% of the voltage value of the actual breakdown voltage of the APD to be calibrated at different temperatures is taken as the corresponding actual reverse bias voltage.
In some other embodiments of the second aspect, the second cell includes a fourth sub-cell configured to complete calibration of the APD reverse bias voltage to be calibrated based on the actual reverse bias voltage at each temperature, the fourth sub-cell being further configured to:
Determining target coding values of DAC chips corresponding to actual reverse bias voltages at all temperatures;
And writing target coding values corresponding to the temperatures into a controller of a calibration device for calibrating the APDs to be calibrated.
In some other embodiments of the second aspect, the third unit is further configured to:
Taking the actual reverse bias voltage as an abscissa, carrying out integration processing on the voltage obtained in a period of time after the breakdown current in the actual dark current passes through a preset resistor in an active integration circuit, and taking the value obtained after the integration processing as an ordinate to carry out dotting;
fitting the obtained dotting result, and drawing to obtain a target curve graph.
To achieve the above object, the present application provides, in a third aspect, an electronic apparatus comprising:
A memory for storing a computer program;
A processor for enabling the steps of the avalanche photodiode calibration method as described in any of the embodiments of the first aspect above, when executing a computer program stored on a memory.
To achieve the above object, the present application provides in a fourth aspect a computer readable storage medium having stored thereon a computer program which, when executed by a processor, carries out the steps of avalanche photodiode calibration as described in any of the embodiments of the first aspect above.
Compared with the prior art, the avalanche photodiode calibration scheme provided by the application has the advantages that the participation of an optical module is not needed, the optimal reverse bias voltage test in a wide temperature range can be realized by only carrying out temperature control test on the APD by means of the temperature control box, meanwhile, the dark current is converted into voltage under the condition that the APD does not exist, the dark current is converted into integral to represent the dark current, the integral value and the APD reverse bias voltage value are established to find the APD breakdown voltage, the integral voltage value and the inflection point-breakdown voltage of the VAPD curve are found by adopting a fixed voltage value method, the calibration test of the reverse bias voltage can be automatically completed under the condition that the whole test process and the calibration process do not have manual intervention, and the test result is more accurate.
The application also provides an avalanche photodiode calibration device, electronic equipment and a computer readable storage medium, which have the beneficial effects and are not repeated here.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of an avalanche photodiode calibration method provided in an embodiment of the present application;
FIG. 2 is a flow chart of one method of avalanche photodiode calibration provided in an embodiment of the present application for applying an increasing reverse bias to an APD to be calibrated;
fig. 3-1 to fig. 3-5 are respectively specific schematic diagrams in a combined application scenario provided in an embodiment of the present application;
fig. 4 is a block diagram of an avalanche photodiode calibration device according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1, fig. 1 is a flowchart of an avalanche photodiode calibration according to an embodiment of the present application, which includes the following steps:
Step 101: placing the APDs to be calibrated in a non-light temperature control box, and controlling the non-light temperature control box to enable the APDs to be calibrated to be in environments with different temperatures in sequence according to a preset temperature regulation sequence;
The method aims at placing APDs to be calibrated in a non-light temperature control box by an execution main body (such as a local server or a cloud server for data processing and analysis) suitable for executing the avalanche photodiode calibration method provided by the application, and controlling the non-light temperature control box to enable the APDs to be calibrated to be in environments with different temperatures in sequence according to a preset temperature regulation sequence.
Wherein, this no light control by temperature change case is used for providing each temperature environment and no light environment that is in preset temperature range.
The preset temperature regulation sequence may include a temperature rising regulation process from low to high and a temperature lowering regulation process from high to low, and the temperature rising regulation process may be specifically: the control-free temperature control box is subjected to temperature regulation according to the sequence of temperature change from low temperature to high temperature (for example, from-20 ℃ to 60 ℃), and the control-free temperature control box is kept at each temperature for a time period corresponding to the temperature, and the time period corresponding to each temperature is a time period at least capable of completing detection of reverse bias voltage and dark current of the APD to be calibrated at the corresponding temperature, considering that the time consumption of the calibration process of the APD to be calibrated at each temperature may be different.
Step 102: respectively applying gradually increased reverse bias voltage to APDs to be calibrated which are at each temperature and under the condition of no light, and recording by using a preset temperature measuring resistor and a dark current detection circuit to obtain actual reverse bias voltage and actual dark current under each temperature condition within a preset temperature range;
Based on step 101, this step aims at increasing the reverse bias voltage input to the APD continuously by the above-mentioned execution body for each set environment corresponding to each temperature value in the absence of light of the optical module, so that the current flowing through the APD increases, and recording the current temperature and the current reverse bias voltage and dark current value by using the temperature measuring resistor and dark current detection circuit corresponding to the APD.
Step 103: carrying out dotting by taking the actual reverse bias voltage as an abscissa and taking the voltage integral value of the actual dark current value through the active integration circuit as an ordinate, and drawing a target graph based on a dotting result;
Step 104: determining a horizontal axis value corresponding to a vertical axis inflection point of a curve representing each temperature in the target curve graph as an actual breakdown voltage of the APD to be calibrated at the corresponding temperature;
The two steps aim at establishing a coordinate relation axis of dark current and reverse bias voltage by the execution main body, obtaining a current temperature breakdown voltage value according to a curve, and in the calibration process, when a certain temperature t ℃ is reached, the APD breaks down when a certain voltage value is reached along with the fact that the applied reverse bias voltage is from low to high, meanwhile, a dark current acquisition circuit acquires dark current information, the dark current information is given to a main control chip ADC, the dark current information is taken as an abscissa, a voltage integral value obtained after the dark current value passes through a resistor in an active integration circuit is taken as an ordinate, a point is drawn, and the curve is drawn.
Step 105: calculating to obtain the actual reverse bias voltage of the APD to be calibrated at different temperatures based on the preset proportion between the reverse bias voltage and the breakdown voltage and the actual breakdown voltage at each temperature;
Based on step 104, this step aims to calculate, by the execution body, the actual reverse bias voltage of the APD to be calibrated at different temperatures based on the preset ratio between the reverse bias voltage and the breakdown voltage and the actual breakdown voltage at each temperature, and specifically, the product of the actual breakdown voltage and the preset ratio may be taken as the actual reverse bias voltage at the corresponding temperature.
Step 106: calibration of the APD reverse bias voltage to be calibrated is accomplished based on the actual reverse bias voltage at each temperature.
Based on step 105, this step aims at completing the calibration of the APD reverse bias voltage to be calibrated based on the actual reverse bias voltage at each temperature by the execution body, so as to finally obtain the optimal reverse bias voltage of the APD at each temperature.
Compared with the prior art, the avalanche photodiode calibration method provided by the application has the advantages that the optical module is not needed, the APD can be subjected to temperature control test by means of the temperature control box, the optimal reverse bias voltage test in a wide temperature range can be realized, meanwhile, the dark current is converted into voltage under the condition that the APD is free of light, the dark current is converted into voltage, the integral is used for representing the dark current, the relation between the integrated value and the APD reverse bias voltage value is established to find the APD breakdown voltage, the integral voltage value and the inflection point-breakdown voltage of the VAPD curve are found by adopting a fixed voltage value method, the calibration test of the reverse bias voltage can be automatically completed under the condition that the whole test process and the calibration process are not manually interfered, and the test result is more accurate.
To enhance an understanding of how to apply increasing reverse bias to an APD to be calibrated, this embodiment provides a specific implementation by fig. 2, specifically comprising the steps of:
step 201: boosting the voltage of an APD to be calibrated at each temperature under the condition of no light through a BOOST circuit to supply power to a high-voltage operational amplifier;
step 202: changing the output DAC voltage in a mode of adjusting the output code value through the DAC chip;
Step 203: the DAC voltage is given to the input end of the high-voltage operational amplifier so that the high-voltage operational amplifier outputs reverse bias voltage which is gradually increased in a preset voltage range, and the output reverse bias voltage is applied to the APD to be calibrated so that the dark current flowing through the APD to be calibrated is gradually increased until the APD to be calibrated breaks down to generate breakdown current;
step 204: and recording and obtaining the actual reverse bias voltage and the actual dark current under each temperature condition within a preset temperature range by using a preset temperature measuring resistor and a dark current detection circuit.
First, the APD tube multiplication factor expression is: Where M is the multiplication factor of the APD tube, V APD is the bias voltage applied to the APD tube, V BR is the breakdown voltage of the APD tube, and n is the coefficient related to the APD tube, depending on the semiconductor material, doping profile, radiation wavelength, etc.
The current flowing through the APD is: Where I 0 is the photocurrent at which no multiplication reaction occurs for the APD tube.
The APD does not have a light calibration APD part simplified circuit is shown in a figure 3-1, and the APD is increased to gradually break down, wherein the VAPD voltage boosting voltage part circuit block diagram is shown in a figure 3-2, namely, boosting is firstly carried out through a boost power supply circuit, power is supplied to a high-voltage operational amplifier, a DAC chip changes output DAC voltage through adjusting output coding values, the DAC voltage is supplied to an input end of the high-voltage operational amplifier, the output of the high-voltage operational amplifier can be increased within a certain voltage range, the voltage is supplied to an APD circuit, boosting operation is carried out on the APD at two ends of the APD, I APD is increased gradually and an APD tube breaks down, I APD current is converted into voltage through a series resistor R, a voltage waveform diagram is obtained through testing, namely, the voltage waveform diagram is shown in a figure 3-3, namely, the voltage waveform is shown as random noise just at the beginning, as square wave of random breakdown is carried out along with the increase of reverse bias voltage, and the higher reverse bias voltage is larger in duty ratio.
Based on the characteristic reflected by fig. 3-3, the application further designs an integrating circuit (such as an active integrating circuit) to integrate the voltage after the breakdown current passes through the resistor, the integrated value is used for representing the magnitude of the breakdown current, the integrating circuit block diagram is shown in fig. 3-4, namely, the integrated voltage value is sent to the ADC, and the master control singlechip completes the acquisition of the voltage. Drawing a relation curve of converting dark current into voltage under the condition of APD reverse bias VAPD and no light (namely taking actual reverse bias as an abscissa, carrying out integration treatment on voltage obtained in a period of time after breakdown current in the actual dark current passes through a preset resistor, taking a value obtained after the integration treatment as the ordinate to carry out dotting, then fitting the obtained dotting result, and drawing to obtain a target curve), as shown in figures 3-5: the two curves represent the dark current through one APD at two temperatures converted to a voltage-VAPD curve, respectively, and the curves shift to the right as the temperature increases, t2> t1 in the upper graph.
Specifically, the method for obtaining the breakdown voltage according to the curve relationship is described as follows:
When the VAPD voltage is smaller, the APD is not broken down at the moment, the dark current is basically small, the voltage converted by the dark current can be basically considered as unchanged at the moment, namely the horizontal part voltage VC in the upper graph, the inflection point of the upper graph curve is considered as the breakdown voltage of the APD at the current temperature, namely the horizontal part voltage VC plus a fixed voltage value reaches the voltage value of the upper graph curve VT, the abscissa of the intersection point of the inflection point and the curve is the breakdown voltage value VBR of the APD, and the breakdown voltage t-VBR relation of the APD at different temperatures can be obtained in the process of continuously increasing the temperature.
The method comprises the following specific steps:
Step 1: setting the temperature in a high-low temperature box from high to low or from low to high, and setting the temperature range to be (-20 ℃ -60 ℃);
Step 2: for the environment corresponding to each set temperature value, under the condition that the optical module does not exist, the bias voltage V SET input into the avalanche photodiode APD is continuously increased, so that the current I APD flowing through the avalanche photodiode APD is increased;
Step 3: the temperature measuring resistor and the dark current detecting circuit of the APD module record the current temperature and the dark current value I APD of the current APD bias voltage V SET;
Step 4: and establishing a coordinate relation axis of the current I APD and the voltage V SET, and obtaining a current temperature breakdown voltage value VBR according to the curve.
In the calibration process, when a certain temperature t DEG C, a DAC increases from a 0 coding value to a maximum coding value in a certain step, the corresponding V APD voltage is from low to high, an APD breaks down at a certain voltage value, meanwhile, a dark current acquisition circuit acquires dark current information, the dark current information is given to a main control chip ADC, the V APD voltage is taken as an abscissa, the dark current value is taken as an ordinate to carry out dotting, and a drawing curve is shown in figures 3-5.
VBR1 and VBR2 are obtained according to the method as above, thus obtaining a temperature t-VBR (t) relation table, and the calibration is completed.
The bias control process is a meter reading process. The temperature measuring resistor is used for measuring the temperature t0 of the current APD tube, and then the breakdown voltage t-VBR (t 0) of the APD tube at the current temperature is read out according to the corresponding t-VBR (t) table.
The purpose of APD calibration and bias control is to ensure that the multiplication factor of APDs is the same at different temperatures, the multiplication factor M being expressed as followsAs long as V APD/VBR is guaranteed to be a constant value, the multiplication factor M can be guaranteed to be a constant value, and the design is V APD/VBR =0.95.
After the breakdown voltage t-VBR (t 0) of the APD tube corresponding to the temperature t0 is read, the voltage V APD (t 0) which is wanted to be applied to the APD tube is calculated as follows: v APD(t0)＝0.95×VBR (t 0).
According to the circuit gain and the related formula, the corresponding DAC coding value can be obtained through calculation, the DAC coding value is written in the main chip, and the bias voltage control process of the current temperature t0 is completed. That is, the target code value of the DAC chip corresponding to the actual reverse bias voltage at each temperature is determined, and then the target code value corresponding to each temperature is written into the controller of the calibration apparatus that calibrates the APD to be calibrated.
The above complete scheme provided by this embodiment has the following key technical points:
1) Carrying out temperature rise test on the APD to realize optimal reverse bias voltage test in a wide temperature range; 2) No light calibration is carried out, and APD calibration is automatically completed without participation of an optical module; 3) Converting dark current under the condition that the APD does not exist, converting the dark current into voltage and integrating to represent a dark current value; 4) Establishing a relation between the integrated value and the APD reverse bias voltage value to find APD breakdown voltage; 5) The inflection points of the integral voltage value and the VAPD curve, namely breakdown voltage, are found by adopting a method of fixing the voltage value, so that the actual measurement effect is very good; 6) The APD breakdown voltage obtained through testing is calculated according to a certain relation to obtain the optimal reverse bias voltage which is given to the APD; 7) The whole testing process and the calibration process are completed automatically without manual intervention.
Compared with the prior art, by applying the technical scheme provided by the embodiment, the breakdown voltage of the APD can be accurately tested, the optimal bias voltages of the APD at different temperatures can be tested, the error of the reverse bias voltages of the APD caused by the inconsistency of the APDs can be avoided, and finally, the test is convenient and concise, time and labor are saved, and the cost is not increased too much.
Because of the complexity and cannot be illustrated by one, those skilled in the art will recognize that many examples of the basic method principles provided in accordance with the present application may exist in combination with the actual situation, and should be within the scope of the present application without performing enough inventive effort.
Referring now to fig. 4, fig. 4 is a block diagram of an avalanche photodiode calibration device 400 according to an embodiment of the present application, where the avalanche photodiode calibration device 400 may include:
A first unit 401 configured to place APDs to be calibrated in a non-light temperature control box and control the non-light temperature control box to enable the APDs to be calibrated to be in environments with different temperatures in sequence according to a preset temperature regulation sequence; wherein, no light temperature control box is used for providing each temperature environment and no light environment within the preset temperature range; a second unit 402 configured to apply gradually increasing reverse bias voltages to APDs to be calibrated at each temperature and under no light condition, respectively, to generate breakdown currents, and record actual reverse bias voltages and actual dark currents under each temperature condition within a preset temperature range by using a preset temperature measuring resistor and a dark current detection circuit; a third unit 403 configured to plot points with the actual reverse bias voltage as an abscissa and the voltage integral value of the actual dark current value through the active integration circuit as an ordinate, and draw a target graph based on the result of the point plot; a fourth unit 404 configured to determine a value of a horizontal axis corresponding to a vertical axis inflection point of the curve representing each temperature in the target graph as an actual breakdown voltage of the APD to be calibrated at the corresponding temperature; a fifth unit 405 configured to calculate an actual reverse bias voltage of the APD to be calibrated at different temperatures based on a preset ratio between the reverse bias voltage and the breakdown voltage to be maintained and the actual breakdown voltage at each temperature; a sixth unit 406 is configured to complete calibration of the APD reverse bias voltage to be calibrated based on the actual reverse bias voltage at each temperature.
In some implementations of this embodiment, the first unit 401 includes a first subunit configured to control the environment in which the APD to be calibrated is sequentially at different temperatures in a preset temperature regulation order without a light temperature control box, and the first subunit may be further configured to:
The control of the non-light temperature control box is carried out according to the temperature change sequence from low temperature to high temperature, and the control of the non-light temperature control box is carried out for a period of time corresponding to the temperature at each temperature; wherein the time period corresponding to each temperature is at least capable of completing detection of reverse bias voltage and dark current of the APD to be calibrated at the corresponding temperature.
In some implementations of the present embodiment, the second cell 402 includes a second sub-cell configured to apply progressively increasing reverse bias voltages to each APD to be calibrated at each temperature and in a no light condition, the second sub-cell being further configured to:
And respectively boosting the voltage of the APD to be calibrated at each temperature under the no-light condition through a BOOST circuit to supply power to the high-voltage operational amplifier, changing the output DAC voltage through a DAC chip in a mode of adjusting the output coding value, supplying the DAC voltage to the input end of the high-voltage operational amplifier to enable the high-voltage operational amplifier to output reverse bias voltage which is gradually increased within a preset voltage range, and applying the output reverse bias voltage to the APD to be calibrated to enable the dark current flowing through the APD to be gradually increased until breakdown of the APD to be calibrated generates breakdown current.
In some implementations of this embodiment, the second cell 402 includes a third sub-cell configured to calculate an actual reverse bias voltage of the APD to be calibrated at a different temperature based on a preset ratio between reverse bias voltage and breakdown voltage to be maintained and the actual breakdown voltage at each temperature, the third self-cell being further configured to:
In response to the ratio between reverse bias voltage and breakdown voltage being maintained at 95%, 95% of the voltage value of the actual breakdown voltage of the APD to be calibrated at different temperatures is taken as the corresponding actual reverse bias voltage.
In some implementations of the present embodiment, the second cell 402 includes a fourth sub-cell configured to complete calibration of the APD reverse bias voltage to be calibrated based on the actual reverse bias voltage at each temperature, the fourth sub-cell being further configured to:
Determining target coding values of DAC chips corresponding to actual reverse bias voltages at all temperatures;
And writing target coding values corresponding to the temperatures into a controller of a calibration device for calibrating the APDs to be calibrated.
In some implementations of the present embodiment, the third unit 403 is further configured to:
Taking the actual reverse bias voltage as an abscissa, carrying out integration processing on the voltage obtained in a period of time after the breakdown current in the actual dark current passes through a preset resistor in an active integration circuit, and taking the value obtained after the integration processing as an ordinate to carry out dotting;
fitting the obtained dotting result, and drawing to obtain a target curve graph.
The present embodiment exists as an apparatus embodiment corresponding to the above-described method embodiment. Compared with the prior art, the avalanche photodiode calibration device provided by the embodiment does not need to participate in an optical module, can realize the optimal reverse bias voltage test in a wide temperature range by only carrying out temperature control test on an APD by means of a temperature control box, converts dark current into voltage under the condition that the APD does not exist, integrates the dark current to represent the dark current, establishes a relation between the integrated value and the APD reverse bias voltage value to find the APD breakdown voltage, and adopts a fixed voltage value method to find the integral voltage value and the inflection point-breakdown voltage of a VAPD curve, so that the calibration test of the reverse bias voltage can be automatically completed under the condition that the whole test process and the calibration process do not have manual intervention, and the test result is more accurate.
Based on the above embodiment, the present application further provides an electronic device, where the electronic device may include a memory and a processor, where the memory stores a computer program, and the processor may implement the steps provided in the above embodiment when calling the computer program in the memory. Of course, the electronic device may also include various necessary network interfaces, power supplies, and other components, etc.
The present application also provides a computer-readable storage medium having stored thereon a computer program which, when executed by an execution terminal or processor, performs the steps provided by the above embodiments. The storage medium may include: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
In the description, each embodiment is described in a progressive manner, and each embodiment is mainly described by the differences from other embodiments, so that the same similar parts among the embodiments are mutually referred. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative elements and steps are described above generally in terms of functionality in order to clearly illustrate the interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
The principles and embodiments of the present application have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present application and its core ideas. It will be apparent to those skilled in the art that various changes and modifications can be made to the present application without departing from the principles of the application, and such changes and modifications fall within the scope of the appended claims.
It should also be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Claims (10)
1. An avalanche photodiode calibration method, comprising:
Placing an APD to be calibrated in a non-light temperature control box, and controlling the non-light temperature control box to enable the APD to be calibrated to be in environments with different temperatures in sequence according to a preset temperature regulation sequence; wherein, the no-light temperature control box is used for providing various temperature environments and no-light environments within a preset temperature range;
Respectively applying gradually increased reverse bias voltage to APDs to be calibrated which are at each temperature and under the condition of no light to generate breakdown current, and recording by using a preset temperature measuring resistor and a dark current detection circuit to obtain actual reverse bias voltage and actual dark current under each temperature condition within the preset temperature range;
Carrying out dotting by taking the actual reverse bias voltage as an abscissa and taking a voltage integral value of the actual dark current value through an active integration circuit as an ordinate, and drawing a target graph based on a dotting result;
Determining a horizontal axis value corresponding to a vertical axis inflection point of a curve representing each temperature in the target curve graph as an actual breakdown voltage of the APD to be calibrated at the corresponding temperature;
Calculating to obtain the actual reverse bias voltage of the APD to be calibrated at different temperatures based on the preset proportion between the reverse bias voltage and the breakdown voltage and the actual breakdown voltage at each temperature;
and calibrating the reverse bias voltage of the APD to be calibrated based on the actual reverse bias voltage at each temperature.
2. The method of claim 1, wherein controlling the non-light temperature control box to sequentially bring the APD to be calibrated to environments of different temperatures in a preset temperature regulation sequence comprises:
Controlling the matt temperature control box to regulate and control the temperature according to the temperature change sequence from low temperature to high temperature, and controlling the matt temperature control box to keep the duration corresponding to the temperature at each temperature; the time period corresponding to each temperature is at least capable of completing detection of reverse bias voltage and dark current of the APD to be calibrated at the corresponding temperature.
3. The method of claim 1, wherein applying progressively increasing reverse bias voltages to the APDs to be calibrated at each temperature and in the absence of light, respectively, to generate breakdown currents comprises:
And respectively boosting the voltage of the APD to be calibrated at each temperature under the no-light condition through a BOOST circuit to supply power to the high-voltage operational amplifier, changing the output DAC voltage through a DAC chip in a mode of adjusting the output coding value, supplying the DAC voltage to the input end of the high-voltage operational amplifier to enable the high-voltage operational amplifier to output reverse bias voltage which is gradually increased in a preset voltage range, and applying the output reverse bias voltage to the APD to be calibrated to enable the dark current flowing through the APD to be gradually increased until the APD to be calibrated breaks down to generate breakdown current.
4. A method according to claim 3, wherein calculating the actual reverse bias voltage of the APD to be calibrated at different temperatures based on the predetermined ratio between reverse bias voltage and breakdown voltage to be maintained and the actual breakdown voltage at each temperature comprises:
and in response to the ratio between the reverse bias voltage and the breakdown voltage being 95%, taking 95% of the voltage value of the actual breakdown voltage of the APD to be calibrated at different temperatures as the corresponding actual reverse bias voltage.
5. The method of claim 4, wherein said performing calibration of said APD reverse bias voltage to be calibrated based on actual reverse bias voltages at respective temperatures comprises:
Determining target coding values of DAC chips corresponding to actual reverse bias voltages at all temperatures;
And writing target coding values corresponding to the temperatures into a controller of a calibration device for calibrating the APDs to be calibrated.
6. The method according to any one of claims 1 to 5, wherein the dotting with the actual reverse bias voltage as an abscissa and the voltage integral value of the actual dark current value through the active integration circuit as an ordinate, and drawing the target graph based on the dotting result, comprises:
Taking the actual reverse bias voltage as an abscissa, carrying out integration processing on the voltage obtained in a period of time after the breakdown current in the actual dark current passes through a preset resistor in an active integration circuit, and taking the value obtained after the integration processing as the ordinate to carry out dotting;
fitting the obtained dotting result, and drawing to obtain the target curve graph.
7. An avalanche photodiode calibration arrangement, comprising:
The device comprises a first unit, a second unit and a third unit, wherein the first unit is configured to place an APD to be calibrated in a non-light temperature control box and control the non-light temperature control box to enable the APD to be calibrated to be in environments with different temperatures in sequence according to a preset temperature regulation sequence; wherein, the no-light temperature control box is used for providing various temperature environments and no-light environments within a preset temperature range;
The second unit is configured to apply gradually increased reverse bias voltages to APDs to be calibrated which are at each temperature and under the dark condition respectively to generate breakdown currents, and record and obtain actual reverse bias voltages and actual dark currents under each temperature condition within the preset temperature range by using a preset temperature measuring resistor and a dark current detection circuit;
A third unit configured to plot points with the actual reverse bias voltage as an abscissa and a voltage integral value of the actual dark current value through the active integration circuit as an ordinate, and to draw a target graph based on a result of the point plot;
A fourth unit configured to determine a horizontal axis value corresponding to a vertical axis inflection point of a curve representing each temperature in the target graph as an actual breakdown voltage of the APD to be calibrated at the corresponding temperature;
A fifth unit configured to calculate an actual reverse bias voltage of the APD to be calibrated at different temperatures based on a preset ratio between the reverse bias voltage and the breakdown voltage to be maintained and the actual breakdown voltage at each temperature;
and a sixth unit configured to complete calibration of the APD reverse bias voltage to be calibrated based on the actual reverse bias voltages at the respective temperatures.
8. The apparatus of claim 7, wherein the first unit comprises a first subunit configured to control the non-light temperature control box to sequentially subject the APD to be calibrated to environments of different temperatures in a preset temperature regulation sequence, the first subunit further configured to:
Controlling the matt temperature control box to regulate and control the temperature according to the temperature change sequence from low temperature to high temperature, and controlling the matt temperature control box to keep the duration corresponding to the temperature at each temperature; the time period corresponding to each temperature is at least capable of completing detection of reverse bias voltage and dark current of the APD to be calibrated at the corresponding temperature.
9. An electronic device, comprising:
a memory for a computer program;
A processor for implementing the steps of the avalanche photodiode calibration method according to any of claims 1 to 6 when executing a computer program stored on the memory.
10. A readable storage medium, characterized in that it has stored thereon a computer program which, when executed by a processor, can implement the steps of the avalanche photodiode calibration method according to any of claims 1 to 6.
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| CN202410291680.0A CN118191542A (en) | 2024-03-14 | 2024-03-14 | Avalanche photodiode calibration method, device, equipment and readable storage medium |
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