CN118190231A - Gas pressure sensor chip based on semiconductor film and preparation method thereof - Google Patents
Gas pressure sensor chip based on semiconductor film and preparation method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 118
- 239000010703 silicon Substances 0.000 claims abstract description 118
- 239000010408 film Substances 0.000 claims abstract description 93
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 72
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 229910052738 indium Inorganic materials 0.000 claims abstract description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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Abstract
The application provides a gas pressure sensor chip based on a semiconductor film and a preparation method thereof, wherein the preparation method comprises the steps of preparing a first sub-chip, wherein the first sub-chip comprises a first silicon wafer, growing a silicon nitride film on a first surface and a second surface of the first silicon wafer, and preparing an electromagnetic spiral coil in the central area of the first surface of the first silicon wafer; preparing a second sub-chip, wherein the second sub-chip comprises a second silicon wafer, and a superconducting thin film microwave resonant cavity is prepared in the central area of the first surface of the second silicon wafer; preparing indium columns at two ends of the first surface of the second sub-chip; and fixing the first sub-chip and the second sub-chip by utilizing an indium column to obtain a gas pressure sensor chip, wherein the center points of the first sub-chip and the second sub-chip are on the same vertical line, and the second surface of the first silicon wafer and the first surface of the second silicon wafer are oppositely placed. According to the embodiment, the superconducting thin film microwave resonant cavity is prepared by adopting the upper chip and the lower chip, so that the manufactured gas pressure sensor chip is small in size.
Description
Technical Field
The application relates to the field of gas pressure sensors, in particular to a gas pressure sensor chip based on a semiconductor film and a preparation method thereof.
Background
In the field of gas pressure sensors, a superconducting film microwave resonant cavity with an adjustable magnetic field is a new branch direction. However, the induced electromotive force of the current superconducting thin film microwave resonant cavity with adjustable magnetic field is not influenced or affected by the change of an external magnetic field and weak.
Disclosure of Invention
The application provides a semiconductor film-based gas pressure sensor chip and a preparation method thereof, which are used for solving the problem that the reaction of the induced electromotive force of the traditional magnetic field adjustable superconducting film microwave resonant cavity to the external magnetic field change is small.
According to an aspect of the present application, there is provided a method for manufacturing a semiconductor thin film-based gas pressure sensor chip, including: preparing a first sub-chip, wherein the first sub-chip comprises a first silicon wafer, a silicon nitride film grows on a first surface and a second surface of the first silicon wafer, and an electromagnetic spiral coil is prepared in the central area of the first surface of the first silicon wafer; preparing a second sub-chip, wherein the second sub-chip comprises a second silicon wafer, and a superconducting thin film microwave resonant cavity is prepared in the central area of the first surface of the second silicon wafer; preparing indium columns at two ends of the first surface of the second sub-chip; and fixing the first sub-chip and the second sub-chip by utilizing the indium column to obtain the gas pressure sensor chip, wherein the center points of the first sub-chip and the second sub-chip are on the same vertical line, and the second surface of the first silicon wafer and the first surface of the second silicon wafer are oppositely placed.
According to some embodiments, preparing a first sub-chip comprises: preparing the silicon nitride film on the first surface and the second surface of the first silicon wafer; preparing the electromagnetic spiral coil on a silicon nitride film on the first surface of the first silicon wafer; etching a silicon nitride film on the second surface of the first silicon wafer at a position corresponding to the electromagnetic spiral coil, wherein the area of the etched silicon nitride film is not smaller than that of the corresponding electromagnetic spiral coil; etching a region of the silicon nitride film in the second surface of the first silicon wafer to etch the first silicon wafer until the silicon nitride film of the first surface of the first silicon wafer is exposed, so that the silicon nitride film on the first surface of the first silicon wafer at a corresponding position is suspended, wherein the area of the suspended silicon nitride film is not smaller than the area of the electromagnetic spiral coil.
According to some embodiments, the electromagnetic coil is fabricated on a silicon nitride film of a first side of the first silicon wafer, comprising: and preparing the electromagnetic spiral coil on the silicon nitride film on the first surface of the first silicon wafer by means of exposure, electron beam evaporation and stripping.
According to some embodiments, etching a silicon nitride film on a second surface of the first silicon wafer at a position corresponding to the electromagnetic spiral coil, wherein the etched silicon nitride film has an area not smaller than that of the corresponding electromagnetic spiral coil, and the method comprises the following steps: and etching the silicon nitride film on the second surface of the first silicon wafer at the position corresponding to the electromagnetic spiral coil by means of laser direct writing exposure, development and reactive ion etching.
According to some embodiments, etching the region of the silicon nitride film in the second surface of the first silicon wafer etches the first silicon wafer until the silicon nitride film on the first surface of the first silicon wafer is exposed, so that the silicon nitride film on the first surface of the first silicon wafer at the corresponding position is suspended, including: and etching the first silicon wafer by using the residual silicon nitride film on the second surface of the first silicon wafer as a mask in the area etched with the silicon nitride film in the second surface of the first silicon wafer by using potassium hydroxide solution so as to suspend the silicon nitride film on the first surface of the first silicon wafer at the corresponding position.
According to some embodiments, preparing a second sub-chip comprises: preparing a superconducting film on the first surface of the second silicon wafer by using a magnetron sputtering method; and preparing the superconducting film microwave resonant cavity by utilizing the superconducting film and sequentially adopting a laser direct writing exposure method, a developing method and a reactive ion etching method.
According to some embodiments, preparing indium columns at both ends of the first side of the second sub-chip includes: and preparing indium columns at two ends of the first surface of the second sub-chip by means of exposure, evaporation and stripping.
According to an aspect of the present application, there is provided a semiconductor thin film-based gas pressure sensor chip including: the first sub-chip comprises a first silicon wafer, an electromagnetic spiral coil is arranged on the first surface of the first silicon wafer, and silicon nitride films are grown at two ends of the second surface opposite to the first surface of the first silicon wafer; the second sub-chip comprises a second silicon wafer, and a superconducting thin film microwave resonant cavity is prepared in the central area of the first surface of the second silicon wafer; the indium column is arranged at two ends of the first surface of the second sub-chip to fix the first sub-chip and the second sub-chip, the center points of the first sub-chip and the second sub-chip are on the same vertical line, and the second surface of the first silicon wafer and the first surface of the second silicon wafer are oppositely placed.
According to some embodiments, the electromagnetic spiral coil is disposed on the silicon nitride film on the first side of the first silicon wafer, and the suspended area of the silicon nitride film below the electromagnetic spiral coil is not smaller than the area of the electromagnetic spiral coil.
According to some embodiments, the indium columns have a height of 50-500 μm and a diameter of 10-50 μm.
According to some embodiments of the application, the superconducting thin film microwave resonant cavity is prepared by adopting the structural design of the upper chip and the lower chip, so that the manufactured gas pressure sensor chip is small in size and is convenient to apply to a vacuum environment with extremely low temperature.
According to other embodiments, the gas pressure sensor chip is fabricated to a size less than 5mm x0.3mm, and the housing diameter of the vacuum gauge is no greater than 10mm. Because of the extremely low temperature environment (10 mk-1 k) and the difficulty in obtaining, the space after realization is also limited, the vacuum detector has high integration level, small size and good application prospect and can operate at extremely low temperature.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. The above and other objects, features and advantages of the present application will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 shows a flowchart of a method for manufacturing a semiconductor thin film-based gas pressure sensor chip according to an exemplary embodiment of the present application.
Fig. 2 shows a block diagram of an apparatus for a semiconductor thin film based gas pressure sensor chip according to an exemplary embodiment of the present application.
Fig. 3 shows a schematic diagram of a process for preparing a first sub-chip according to an exemplary implementation of the present application.
Fig. 4 shows a schematic diagram of a process of preparing a second sub-chip according to an exemplary embodiment of the present application.
Fig. 5 shows a schematic diagram of a process of assembling a gas pressure sensor chip according to an example embodiment of the application.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar parts, and thus a repetitive description thereof will be omitted.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the disclosed aspects may be practiced without one or more of the specific details, or with other methods, components, materials, devices, operations, etc. In these instances, well-known structures, methods, devices, implementations, materials, or operations are not shown or described in detail.
The flow diagrams depicted in the figures are exemplary only, and do not necessarily include all of the elements and operations/steps, nor must they be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the order of actual execution may be changed according to actual situations.
The terms first, second and the like in the description and in the claims and in the above-described figures are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
As mentioned above, in the field of gas pressure sensors, a superconducting thin film microwave cavity with adjustable magnetic field is a new branching direction. When the intensity of the magnetic field passing through the magnetic field adjustable superconducting thin film microwave resonant cavity changes, the induced electromotive force of the magnetic field adjustable superconducting thin film microwave resonant cavity also changes. But the current magnetic field adjustable superconducting film microwave resonant cavity has small response to the change of an external magnetic field.
According to an embodiment of the present application, a gas pressure sensor chip of a double-layer chip structure is provided. Wherein, the upper sub-chip of the gas pressure sensor chip is a film chip with an electromagnetic coil. When the gas pressure sensor chip is put into a corresponding mechanical device, the electromagnetic coil generates a magnetic field after being electrified. When the silicon nitride film is subjected to external pressure, the silicon nitride film deforms, and the magnetic field is driven to change accordingly. The superconducting thin film microwave resonant cavity is influenced by the change of the magnetic field, the magnetic flux of the superconducting thin film microwave resonant cavity changes, the frequency of the resonant cavity moves, and the cavity frequency changes. Through the test to the cavity frequency, can finally back-push external atmospheric pressure value to realized the survey to the ambient atmospheric pressure.
Specific embodiments according to the present application will be described in detail below with reference to the accompanying drawings.
Fig. 1 shows a flowchart of a method for manufacturing a semiconductor thin film-based gas pressure sensor chip according to an exemplary embodiment of the present application, the method for manufacturing as shown in fig. 1 including steps S101, S103, S105 and S107.
As shown in fig. 1, in step S101, a first sub-chip is prepared.
According to the embodiment of the application, the first sub-chip comprises a first silicon wafer, silicon nitride films are respectively grown on the first surface and the second surface of the first silicon wafer, and an electromagnetic spiral coil is prepared in the central area of the first surface of the first silicon wafer.
In a specific embodiment, the dimensions of the silicon nitride film are the same as the dimensions of the first silicon wafer.
In a specific embodiment, step S101 includes substeps S1011, S1013, S1015, and S1017.
In sub-step S1011, silicon nitride films are prepared on the first and second sides of the first silicon wafer, respectively.
In a specific embodiment, a high stress silicon nitride film is formed on the first side and the second side of the first silicon wafer by using a low pressure chemical vapor deposition system.
In substep S1013, an electromagnetic coil is fabricated on a silicon nitride film on a first side of a first silicon wafer.
In a specific embodiment, the electromagnetic spiral coil is prepared on the silicon nitride film on the first surface of the first silicon wafer by means of exposure, electron beam evaporation and stripping in sequence.
In substep S1015, a silicon nitride film is etched on the second surface of the first silicon wafer at a location corresponding to the electromagnetic coil.
In some embodiments, the silicon nitride film is etched on the second surface of the first silicon wafer at the position corresponding to the electromagnetic spiral coil by means of laser direct writing exposure, development and reactive ion etching in sequence, and the area of the etched silicon nitride film is not smaller than the area corresponding to the electromagnetic spiral coil.
In substep S1017, etching a region of the silicon nitride film in the second surface of the first silicon wafer to etch the first silicon wafer until the silicon nitride film on the first surface of the first silicon wafer is exposed, so that the silicon nitride film on the first surface of the first silicon wafer at the corresponding position is suspended.
For example, the potassium hydroxide solution is used, the remaining silicon nitride film on the second surface of the first silicon wafer is used as a mask, and the area of the silicon nitride film etched in the second surface of the first silicon wafer corrodes the first silicon wafer, so that the silicon nitride film on the first surface of the first silicon wafer at the corresponding position is suspended.
In a specific embodiment, the suspended silicon nitride film has an area not smaller than the area of the electromagnetic coil.
In step S103, a second sub-chip is prepared.
According to an embodiment of the application, the second sub-chip comprises a second silicon wafer, and a superconducting thin film microwave resonant cavity is prepared in the central area of the first surface of the second silicon wafer.
For example, a β -Ta superconducting thin film microwave cavity is fabricated in a central region of the first side of the second silicon wafer.
In a specific embodiment, step S103 includes sub-steps S1031 and S1033.
In substep S1031, a superconducting thin film is prepared on the first side of the second silicon wafer.
For example, a β -Ta film is prepared on the first side of the second silicon wafer using a magnetron sputtering method.
In substep S1033, a superconducting thin film microwave cavity is prepared using the superconducting thin film.
For example, a beta-Ta superconducting film microwave resonant cavity is prepared by utilizing a beta-Ta film through laser direct writing exposure, development and reactive ion etching methods in sequence.
In a specific embodiment, the first silicon wafer comprises a double-polished high-resistance silicon wafer; and/or the second silicon wafer comprises a single-polished high-resistance silicon wafer.
In step S105, indium columns are prepared at both ends of the first side of the second sub-chip.
In a specific embodiment, indium columns are prepared at two ends of the first surface of the second sub-chip by means of exposure, evaporation and stripping in sequence.
In some embodiments, the indium posts have a height of 50-500 μm and a diameter of 10-50 μm.
In step S107, the first sub-chip and the second sub-chip are fixed by using indium columns, and a gas pressure sensor chip is obtained.
According to the embodiment of the application, the center points of the first sub-chip and the second sub-chip are on the same vertical line, and the second surface of the first silicon wafer and the first surface of the second silicon wafer are oppositely arranged.
According to the embodiment shown in fig. 1, the superconducting thin film microwave resonant cavity is prepared by adopting the structural design of the upper chip and the lower chip, so that the manufactured gas pressure sensor chip has smaller size and is convenient to be applied to a vacuum environment with extremely low temperature.
In a specific application, when the gas pressure sensor chip is placed in a corresponding mechanical device, a magnetic field is generated after the electromagnetic coil is energized. When the silicon nitride film is subjected to external pressure, the silicon nitride film deforms, and the magnetic field is driven to change accordingly. The superconducting thin film microwave resonant cavity is influenced by the change of the magnetic field, the magnetic flux of the superconducting thin film microwave resonant cavity changes, the frequency of the resonant cavity moves, and the cavity frequency changes. Through the test to the cavity frequency, can finally back-push external atmospheric pressure value to realized the survey to the ambient atmospheric pressure.
According to other embodiments, the gas pressure sensor chip is fabricated to a size less than 5x5x0.3mm, and the housing diameter of the vacuum gauge is no greater than 10mm. Because of the extremely low temperature environment (10 mk-1 k) and the difficulty in obtaining, the space after realization is also limited, the vacuum detector has high integration level, small size and good application prospect and can operate at extremely low temperature.
Fig. 2 shows a block diagram of an apparatus of a semiconductor thin film based gas pressure sensor chip according to an exemplary embodiment of the present application, the gas pressure sensor chip shown in fig. 2 includes a first sub-chip 201, a second sub-chip 203, and an indium column 205.
In some embodiments, the first sub-chip 201 comprises a first silicon wafer, on a first side of which an electromagnetic spiral coil is fabricated, and on both ends of a second side opposite to the first side of the first silicon wafer, a silicon nitride film is provided.
In other embodiments, the second sub-chip 203 comprises a second silicon wafer, and a superconducting thin film microwave cavity is prepared in a central region of the first surface of the second silicon wafer.
In other embodiments, the indium columns 205 are disposed at two ends of the first surface of the second sub-chip 203 to fix the first sub-chip 201 and the second sub-chip 203, and the center points of the first sub-chip 201 and the second sub-chip 203 are on the same vertical line, and the second surface of the first silicon wafer and the first surface of the second silicon wafer are disposed opposite to each other.
In a specific embodiment, the electromagnetic spiral coil is disposed on the silicon nitride film on the first surface of the first silicon wafer, and the suspended area of the silicon nitride film below the electromagnetic spiral coil is not smaller than the area of the electromagnetic spiral coil.
In other embodiments, the indium posts have a height of 50-500 μm and a diameter of 10-50 μm.
Fig. 3 is a schematic diagram of a process for preparing a first sub-chip according to an exemplary embodiment of the present application, and as shown in fig. 3, in a first step, a high stress silicon nitride film is grown on both sides of a double-polished high-resistance silicon wafer by using a Low-pressure chemical vapor deposition (LPCVD) system. For convenience of the following description, the first and second sides of the first sub-chip are defined as shown in fig. 3.
In the second step, an electromagnetic spiral coil is prepared on the first side of the first sub-chip by exposure, electron beam evaporation and stripping methods.
In some embodiments, the first sub-chip has a length of 3-5 mm, a width of 3-5 mm, and a diameter of 1-3 mm.
For example, in the second step, jin Dianci helical coils are prepared. The first sub-chip has a size of 5mm x 5mm, and the diameter of the gold electromagnetic spiral coil is 2mm.
In a third step, a window is opened in the second side of the first sub-chip at the corresponding position of the electromagnetic spiral coil by laser direct write exposure, development and reactive ion etching (e.g., using a reactive ion etcher).
In a specific embodiment, the size of the etched window is not smaller than the prepared electromagnetic spiral coil and is in the middle of the first sub-chip.
And in the fourth step, corroding the silicon wafer at the window position of the second surface of the first sub-chip by using potassium hydroxide solution, so that the silicon nitride film corresponding to the lower part of the electromagnetic spiral coil of the first surface of the first sub-chip is suspended.
In some embodiments, the silicon die size of the etched-away first sub-chip is no smaller than the first side electromagnetic coil size of the first sub-chip.
Thus, the first sub-chip preparation is completed.
Fig. 4 shows a schematic diagram of a process of preparing a second sub-chip according to an exemplary embodiment of the present application.
As shown in fig. 4, in the first step, a superconducting thin film is grown on the first surface of a single-throw high-resistance silicon wafer by magnetron sputtering.
For example, a beta-Ta superconducting film is grown on the surface of a single-throw high-resistance silicon wafer by magnetron sputtering.
In a specific embodiment, the second sub-chip has a length of 3 to 5mm and a width of 3 to 5mm. For example, the second sub-chip has a size of 5mm x 5mm.
In the second step, the superconducting film is processed into a superconducting film microwave resonant cavity by laser direct writing exposure, development and reactive ion etching, and the superconducting film microwave resonant cavity is in a circular ring shape with the diameter of 1-3 mm.
For example, a superconducting thin film microwave cavity is prepared by using a beta-Ta superconducting thin film, and the diameter of a circular ring is 1.5mm.
Thus, the second sub-chip preparation is completed.
Fig. 5 shows a schematic diagram of a process of assembling a gas pressure sensor chip according to an exemplary embodiment of the present application, as shown in fig. 5, in which indium columns are prepared at the edges of a second sub-chip by exposure, evaporation and lift-off in a first step.
In some embodiments, the indium columns are prepared to have a height of 50-500 μm and a diameter of 10-50 μm.
For example, the indium column is prepared to have a height of 100 μm and a diameter of 15. Mu.m.
In the second step, the first surface of the second sub-chip is upwards, the center of the electromagnetic spiral coil of the first surface is aligned with the center of the resonant cavity of the second sub-chip by using an optical microscope, the second sub-chip is pressed down, and the two layers of chips are linked and fixed by using an indium column.
Thus, the gas pressure sensor chip is assembled.
Compared with various vacuum gauges in the prior art, the gas pressure sensor chip of the embodiment of the application is not influenced by detected gas components and can work in an extremely low-temperature environment below 1K. The superconducting resonant cavity of the second sub-chip can be designed to be in a circular range of 1mm by using precise laser direct writing and other process equipment, so that the size of the second sub-chip can be controlled to be 5mmx5mm or even smaller. Likewise, electromagnetic coils can be precisely machined to produce a sufficiently strong magnetic field, i.e., a magnetic field greater than 100mT, when energized in a range of 1 mm.
According to an embodiment of the application, the overall height of the finished assembled chip is less than 0.3mm. Therefore, the whole outer diameter of the whole vacuum gauge is smaller than 10mm, the length is smaller than 100mm, and even smaller, and the vacuum gauge is a microminiature vacuum pressure testing device, so that the vacuum gauge is convenient to work in an extremely low temperature environment.
The foregoing has outlined rather broadly the more detailed description of embodiments of the application in order that the detailed description of the principles and embodiments of the application may be implemented in conjunction with the detailed description of embodiments of the application that follows. Meanwhile, based on the idea of the present application, those skilled in the art can make changes or modifications on the specific embodiments and application scope of the present application, which belong to the protection scope of the present application. In view of the foregoing, this description should not be construed as limiting the application.
Claims (10)
1. A method for manufacturing a semiconductor thin film-based gas pressure sensor chip, comprising:
Preparing a first sub-chip, wherein the first sub-chip comprises a first silicon wafer, a silicon nitride film grows on a first surface and a second surface of the first silicon wafer, and an electromagnetic spiral coil is prepared in the central area of the first surface of the first silicon wafer;
Preparing a second sub-chip, wherein the second sub-chip comprises a second silicon wafer, and a superconducting thin film microwave resonant cavity is prepared in the central area of the first surface of the second silicon wafer;
preparing indium columns at two ends of the first surface of the second sub-chip;
and fixing the first sub-chip and the second sub-chip by utilizing the indium column to obtain the gas pressure sensor chip, wherein the center points of the first sub-chip and the second sub-chip are on the same vertical line, and the second surface of the first silicon wafer and the first surface of the second silicon wafer are oppositely placed.
2. The method of manufacturing of claim 1, wherein manufacturing the first sub-chip comprises:
preparing the silicon nitride film on the first surface and the second surface of the first silicon wafer;
preparing the electromagnetic spiral coil on a silicon nitride film on the first surface of the first silicon wafer;
etching a silicon nitride film on the second surface of the first silicon wafer at a position corresponding to the electromagnetic spiral coil, wherein the area of the etched silicon nitride film is not smaller than that of the corresponding electromagnetic spiral coil;
Etching a region of the silicon nitride film in the second surface of the first silicon wafer to etch the first silicon wafer until the silicon nitride film of the first surface of the first silicon wafer is exposed, so that the silicon nitride film on the first surface of the first silicon wafer at a corresponding position is suspended, wherein the area of the suspended silicon nitride film is not smaller than the area of the electromagnetic spiral coil.
3. The method of manufacturing as claimed in claim 2, wherein manufacturing the electromagnetic coil on the silicon nitride film of the first side of the first silicon wafer comprises:
And preparing the electromagnetic spiral coil on the silicon nitride film on the first surface of the first silicon wafer by means of exposure, electron beam evaporation and stripping.
4. The method of claim 2, wherein etching a silicon nitride film on a second surface of the first silicon wafer at a position corresponding to the electromagnetic coil, wherein the etched silicon nitride film has an area not smaller than an area corresponding to the electromagnetic coil, comprises:
And etching the silicon nitride film on the second surface of the first silicon wafer at the position corresponding to the electromagnetic spiral coil by means of laser direct writing exposure, development and reactive ion etching.
5. The method of claim 2, wherein etching the region of the silicon nitride film in the second side of the first silicon wafer etches the first silicon wafer until the silicon nitride film on the first side of the first silicon wafer is exposed, such that the silicon nitride film on the first side of the first silicon wafer in the corresponding location is suspended, comprising:
And etching the first silicon wafer by using the residual silicon nitride film on the second surface of the first silicon wafer as a mask in the area etched with the silicon nitride film in the second surface of the first silicon wafer by using potassium hydroxide solution so as to suspend the silicon nitride film on the first surface of the first silicon wafer at the corresponding position.
6. The method of manufacturing according to claim 1, wherein manufacturing the second sub-chip comprises:
preparing a superconducting film on the first surface of the second silicon wafer by using a magnetron sputtering method;
and preparing the superconducting film microwave resonant cavity by utilizing the superconducting film and sequentially adopting a laser direct writing exposure method, a developing method and a reactive ion etching method.
7. The method of manufacturing according to claim 1, wherein manufacturing indium columns at both ends of the first face of the second sub-chip comprises:
and preparing indium columns at two ends of the first surface of the second sub-chip by means of exposure, evaporation and stripping.
8. A semiconductor thin film based gas pressure sensor chip, comprising:
The first sub-chip comprises a first silicon wafer, an electromagnetic spiral coil is arranged on the first surface of the first silicon wafer, and silicon nitride films are grown at two ends of the second surface opposite to the first surface of the first silicon wafer;
The second sub-chip comprises a second silicon wafer, and a superconducting thin film microwave resonant cavity is prepared in the central area of the first surface of the second silicon wafer;
The indium column is arranged at two ends of the first surface of the second sub-chip to fix the first sub-chip and the second sub-chip, the center points of the first sub-chip and the second sub-chip are on the same vertical line, and the second surface of the first silicon wafer and the first surface of the second silicon wafer are oppositely placed.
9. A gas pressure sensor chip according to claim 8, wherein,
The electromagnetic spiral coil is arranged on the silicon nitride film on the first surface of the first silicon wafer, and the suspended area of the silicon nitride film below the electromagnetic spiral coil is not smaller than the area of the electromagnetic spiral coil.
10. The gas pressure sensor chip of claim 8, wherein the indium columns have a height of 50-500 μm and a diameter of 10-50 μm.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038162A (en) * | 1988-05-27 | 1989-12-20 | 横河电机株式会社 | Vibrating type transducer and manufacture method thereof |
| US20040057589A1 (en) * | 2002-06-18 | 2004-03-25 | Corporation For National Research Initiatives | Micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure |
| US20070236213A1 (en) * | 2006-03-30 | 2007-10-11 | Paden Bradley E | Telemetry method and apparatus using magnetically-driven mems resonant structure |
| CN105136350A (en) * | 2015-05-15 | 2015-12-09 | 中北大学 | Near-field coupling wireless passive superhigh temperature pressure sensor and manufacturing method thereof |
| CN113498564A (en) * | 2018-12-13 | 2021-10-12 | 法国国家科学研究中心 | Method for manufacturing a superconducting LC-type resonator and superconducting resonator obtained thereby |
| CN115517024A (en) * | 2020-02-28 | 2022-12-23 | 爱丁堡大学理事会 | Flexible device comprising a conductive layer comprising a flexible wireless LC sensor |
| DE102022201185A1 (en) * | 2022-02-04 | 2023-08-10 | Q.ant GmbH | pressure sensor |
| CN219935158U (en) * | 2023-04-03 | 2023-10-31 | 中国计量大学 | LC passive sensor |
-
2024
- 2024-05-20 CN CN202410620721.6A patent/CN118190231B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038162A (en) * | 1988-05-27 | 1989-12-20 | 横河电机株式会社 | Vibrating type transducer and manufacture method thereof |
| US20040057589A1 (en) * | 2002-06-18 | 2004-03-25 | Corporation For National Research Initiatives | Micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure |
| US20070236213A1 (en) * | 2006-03-30 | 2007-10-11 | Paden Bradley E | Telemetry method and apparatus using magnetically-driven mems resonant structure |
| CN105136350A (en) * | 2015-05-15 | 2015-12-09 | 中北大学 | Near-field coupling wireless passive superhigh temperature pressure sensor and manufacturing method thereof |
| CN113498564A (en) * | 2018-12-13 | 2021-10-12 | 法国国家科学研究中心 | Method for manufacturing a superconducting LC-type resonator and superconducting resonator obtained thereby |
| CN115517024A (en) * | 2020-02-28 | 2022-12-23 | 爱丁堡大学理事会 | Flexible device comprising a conductive layer comprising a flexible wireless LC sensor |
| DE102022201185A1 (en) * | 2022-02-04 | 2023-08-10 | Q.ant GmbH | pressure sensor |
| CN219935158U (en) * | 2023-04-03 | 2023-10-31 | 中国计量大学 | LC passive sensor |
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| CN118190231B (en) | 2024-07-16 |
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