CN118174131A - Airtight packaging shell and assembly of photoelectric hybrid integrated laser chip - Google Patents
Airtight packaging shell and assembly of photoelectric hybrid integrated laser chip Download PDFInfo
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- CN118174131A CN118174131A CN202410197912.6A CN202410197912A CN118174131A CN 118174131 A CN118174131 A CN 118174131A CN 202410197912 A CN202410197912 A CN 202410197912A CN 118174131 A CN118174131 A CN 118174131A
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- 239000000758 substrate Substances 0.000 claims abstract description 119
- 239000013307 optical fiber Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 230000005693 optoelectronics Effects 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 230000008054 signal transmission Effects 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
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- 238000003466 welding Methods 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 41
- 238000010586 diagram Methods 0.000 description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 4
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- 230000005540 biological transmission Effects 0.000 description 3
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- 239000002356 single layer Substances 0.000 description 3
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Abstract
The invention provides an airtight packaging shell and an airtight packaging assembly of an optoelectronic hybrid integrated laser chip. The airtight packaging shell is of a three-layer dielectric substrate stacking structure made of insulating semiconductor materials, and the three-layer dielectric substrates are stacked to form a closed cavity which can be used for packaging the photoelectric hybrid integrated laser chip. The laser chip in the closed cavity can be electrically connected with the outside of the cavity through a thin film circuit arranged on the lower dielectric substrate. The laser in the horizontal direction generated by the laser chip can horizontally pass through the side wall of the middle-layer dielectric substrate after being collimated by the collimating lens to form horizontally emergent collimated laser. The airtight packaging structure provided by the invention transmits the side wall of the medium layer dielectric substrate after laser collimation, can be coupled with the optical fiber outside the airtight packaging shell, avoids the optical fiber penetrating into the airtight structure, reduces the size of the airtight packaging shell in the vertical direction, and reduces the volume of the airtight packaging shell.
Description
Technical Field
The invention relates to the technical field of photoelectric hybrid integration, in particular to an airtight packaging shell and an airtight packaging assembly of a photoelectric hybrid integrated laser chip.
Background
The photoelectric components such as the laser chip, the lens group, the backlight detector chip and the like adopted by the semiconductor laser component are very sensitive to the external environment, such as ultraviolet glue adopted by optical coupling, so that the service life of the photoelectric components is influenced, and the reliability of an optical system is also influenced. Therefore, the photoelectric device has a general airtight packaging structure so as to better eliminate the interference of the external severe environment and improve the photoelectric performance, mechanical strength and reliability of the photoelectric device.
Hermetic packaging of laser chips is currently commonly accomplished using metal cases. The laser chip, the coupling lens, the isolator, the optical fiber and the like are integrated in the metal box body, and the parallel sealing welding cover plate realizes the airtight packaging of the chip. Meanwhile, the brazing insulator and the metallized optical fiber penetrate through the metal box body, so that the input and output of radio frequency signals and optical signals are realized. In high density array applications, such as phased array radar applications, the laser density is high, requiring as little post-package volume as possible.
However, the metal box body is usually manufactured by machining, and is limited by machining precision, so that the metal box body has a large volume. The outer diameter of the optical fiber is usually about 125 micrometers, and the mode that the optical fiber penetrates through the metal box body also requires enough space to be reserved in the metal box body, so that the volume of the metal box body is larger.
Disclosure of Invention
The invention provides an airtight packaging shell and an airtight packaging component of an optoelectronic hybrid integrated laser chip, which are used for solving the problem that the airtight packaging structure of the existing laser chip is large in size.
In a first aspect, the present invention provides a hermetically sealed package housing and assembly for an optoelectronic hybrid integrated laser chip, comprising: three layers of dielectric substrates are stacked from bottom to top. The dielectric substrate is made of an insulating semiconductor material.
The upper surface of the lower dielectric substrate is provided with a groove. The middle dielectric substrate is of a square frame structure. The lower dielectric substrate, the middle dielectric substrate and the upper dielectric substrate are stacked to form a closed cavity.
The upper surfaces of the inner part of the closed cavity and the outer part of the lower medium substrate groove are used for arranging laser chips.
And a thin film circuit is arranged on the upper surface of the lower dielectric substrate. The thin film circuit is connected with the inside and the outside of the closed cavity.
And a collimating lens is arranged in the groove. And the main optical axis of the collimating lens coincides with the light emitting direction of the laser chip. The light output end of the collimating lens faces the side wall of the middle-layer dielectric substrate. The collimated laser output by the collimating lens passes through the side wall of the middle-layer dielectric substrate and horizontally exits.
In one possible implementation, the thin film circuit includes a direct current power supply circuit and a radio frequency circuit.
In one possible implementation, the radio frequency circuit includes one signal transmission line and two ground lines. The grounding wire is arranged at two sides of the signal transmission wire.
In one possible implementation, the signal transmission line is connected in series with a radio frequency matching unit.
The radio frequency matching unit is arranged between the lower medium substrate and the middle medium substrate.
In one possible implementation, the signal transmission line is connected to the laser chip by wire bonding.
In one possible implementation, the side wall of the middle-layer dielectric substrate is plated with an anti-reflection film.
In one possible implementation manner, a welding metal layer is arranged at the connection part of the middle-layer dielectric substrate, the upper-layer dielectric substrate and the lower-layer dielectric substrate. The welding metal layer is not communicated with the thin film circuit.
In one possible implementation, the material of the dielectric substrate includes silicon or quartz.
In a second aspect, the present invention provides a hermetically sealed package assembly for an optoelectronic hybrid integrated laser chip, comprising an optoelectronic hybrid integrated laser chip and a collimating lens, and a hermetically sealed package housing for an optoelectronic hybrid integrated laser chip as described in any of the preceding claims.
In one possible implementation manner, the airtight package assembly further includes: the device comprises a condensing lens and an optical fiber, wherein the condensing lens is used for receiving collimated laser and focusing and coupling the collimated laser to the optical fiber.
The invention provides an airtight packaging shell and an airtight packaging assembly of an optoelectronic hybrid integrated laser chip. The airtight packaging shell is of a three-layer dielectric substrate stacking structure made of insulating semiconductor materials, and the three-layer dielectric substrates are stacked to form a closed cavity which can be used for packaging the photoelectric hybrid integrated laser chip. The laser chip in the closed cavity can be electrically connected with the outside of the cavity through a thin film circuit arranged on the lower dielectric substrate. The laser in the horizontal direction generated by the laser chip can horizontally pass through the side wall of the middle-layer dielectric substrate after being collimated by the collimating lens to form horizontally emergent collimated laser. The airtight packaging structure provided by the invention can be prepared by adopting a semiconductor process, has a size reaching a chip level, and reduces the volume of an airtight packaging shell compared with a metal box body structure adopting mechanical processing. On the other hand, the laser of the invention is transmitted through the side wall of the medium substrate of the middle layer after being collimated, and can be coupled with the optical fiber outside the airtight packaging shell, so that the optical fiber is prevented from penetrating into the sealing structure, the size of the airtight packaging shell in the vertical direction is reduced, and the volume of the airtight packaging shell is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a three-dimensional structure of a hermetically sealed package housing of an optoelectronic hybrid integrated laser chip according to an embodiment of the present invention;
FIG. 2 is a schematic view of a cross-sectional structure of the dashed line in FIG. 1 according to an embodiment of the present invention;
FIG. 3 is a schematic top view of the structure of FIG. 1 provided by an embodiment of the present invention;
FIG. 4 is a schematic diagram of optical path transmission provided by an embodiment of the present invention;
FIG. 5 is a schematic three-dimensional structure of a lower dielectric substrate according to an embodiment of the present invention;
FIG. 6 is a schematic top view of the structure of FIG. 5 provided by an embodiment of the present invention;
FIG. 7 is a schematic three-dimensional structure of a stacked lower and middle dielectric substrates according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the lower surface structure of a middle dielectric substrate according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of the upper surface structure of a middle dielectric substrate according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of the lower surface structure of an upper dielectric substrate according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of an airtight package assembly according to an embodiment of the present invention.
Detailed Description
In order to make the present solution better understood by those skilled in the art, the technical solution in the present solution embodiment will be clearly described below with reference to the accompanying drawings in the present solution embodiment, and it is obvious that the described embodiment is an embodiment of a part of the present solution, but not all embodiments. All other embodiments, based on the embodiments in this solution, which a person of ordinary skill in the art would obtain without inventive faculty, shall fall within the scope of protection of this solution.
The term "comprising" in the description of the present solution and the claims and in the above-mentioned figures, as well as any other variants, means "including but not limited to", intended to cover a non-exclusive inclusion, and not limited to only the examples listed herein. Furthermore, the terms "first" and "second," etc. are used for distinguishing between different objects and not for describing a particular sequential order.
The implementation of the invention is described in detail below with reference to the specific drawings:
In the conventional airtight packaging method of the metal box, the optical fiber is transmitted into the metal box and coupled with the laser because the metal box is opaque. For example, the emitted laser of the laser chip is collimated by the collimating lens to obtain the excimer laser, and the collimated laser is condensed by the condensing lens and then coupled into the optical fiber. On the one hand, the mode that optic fibre runs through the metal box body makes box body lateral wall need reserve sufficient run-through space for the volume of metal box body is great. On the other hand, the laser and the optical fiber are coupled in the metal box body, a collimating lens and a condensing lens with larger volumes are arranged in the metal box body, a certain distance between the two lenses is ensured, and the metal box body is further larger in volume.
According to the embodiment of the invention, the side wall of the medium layer substrate is transmitted after laser collimation, the transmitted laser can be coupled with the optical fiber outside the airtight packaging shell, so that the optical fiber is prevented from penetrating into the sealing structure, and the problem that the airtight packaging structure of the existing laser chip is large in size is solved.
Fig. 1 is a schematic three-dimensional structure diagram of an airtight package housing of an optoelectronic hybrid integrated laser chip according to an embodiment of the present invention. Referring to fig. 1, the hermetically sealed package includes: three layers of dielectric substrates are stacked from bottom to top. The dielectric substrate is made of an insulating semiconductor material. The upper surface of the lower dielectric substrate is provided with a groove. The middle dielectric substrate is of a square frame structure. The lower dielectric substrate, the middle dielectric substrate and the upper dielectric substrate are stacked to form a closed cavity. The upper surfaces of the inner and outer layers of the sealed cavity and the lower dielectric substrate groove are used for arranging laser chips. The upper surface of the lower dielectric substrate is provided with a thin film circuit. The thin film circuit is connected with the inside and the outside of the closed cavity. A collimating lens is arranged in the groove. The main optical axis of the collimating lens coincides with the light emitting direction of the laser chip. The light output end of the collimating lens faces the side wall of the middle-layer dielectric substrate. The collimated laser output by the collimating lens passes through the side wall of the middle-layer dielectric substrate and horizontally exits.
Fig. 2 is a schematic view of a cross-sectional structure of the dashed line in fig. 1 according to an embodiment of the present invention. Fig. 3 is a schematic top view of fig. 1 according to an embodiment of the present invention. Referring to fig. 2 and 3, in some embodiments, the hermetically sealed package includes three dielectric substrates stacked from bottom to top. Namely, a lower dielectric substrate, a middle dielectric substrate and an upper dielectric substrate are sequentially arranged from bottom to top.
Fig. 4 is a schematic diagram of optical path transmission according to an embodiment of the present invention. Referring to fig. 4, in some embodiments, the upper surface of the underlying dielectric substrate is provided with grooves. The middle dielectric substrate is of a square frame structure. The lower dielectric substrate, the middle dielectric substrate and the upper dielectric substrate are stacked to form a closed cavity.
The cross section of the groove is rectangular. For example, a recess of a certain depth may be obtained by etching a rectangular mask on a silicon wafer.
The middle dielectric substrate is an exemplary hollow square frame. Further exemplary, the dimension of the hollowed-out center of the square is greater than the dimension of the groove. The square middle dielectric substrate serves as a surrounding frame to surround the area to be sealed on the lower dielectric substrate.
The upper dielectric substrate is illustratively a planar shape. Here, the upper dielectric substrate functions as a cover plate covering the square frame structure of the middle dielectric substrate. After the three layers of dielectric substrates are stacked, a closed cavity is formed by the space of the groove and the space surrounded by the square frame.
It should be further noted that, the three-layer structure is adopted here, and the square frame structure is adopted in the intermediate layer, so that the preparation process can be simplified, and the preparation efficiency can be improved. For example, if a two-layer structure is used, the lower layer and/or the upper layer is recessed to form a closed cavity, and the volume of the collimating lens is large and the required depth of the groove is large in the airtight package of the laser chip. On the one hand, the thickness of the single-layer silicon wafer is about 800 mu m, and the depth of the groove of the single-layer silicon wafer is limited. On the other hand, the time for etching the groove is longer due to the deep groove digging of the single-layer silicon wafer, and the preparation efficiency is reduced. The middle layer is of a square frame structure, and can be cut into the square frame structure rapidly in a laser cutting mode, so that the preparation efficiency is improved.
In some embodiments, the material of the dielectric substrate is an insulating semiconductor material.
Illustratively, the material of the dielectric substrate comprises silicon or quartz.
In some embodiments, the upper surface of the hermetic cavity outside the recess of the underlying dielectric substrate is used to dispose the laser chip.
The middle dielectric substrate has a square frame structure and hollow center, so that a space is available for arranging the laser chip on the upper surface of the lower dielectric substrate.
In some embodiments, the upper surface of the underlying dielectric substrate is provided with thin film circuitry. The thin film circuit is connected with the inside and the outside of the closed cavity. Illustratively, the thin film circuitry may enable electrical connection of the laser chip within the cavity to the outside of the cavity. For example, thin film circuits may be fabricated by a semiconductor thin film process on a dielectric substrate of an insulating semiconductor material. The semiconductor film process comprises a film plating process, a photoetching process, an etching process and the like.
In some embodiments, a collimating lens is disposed within the recess. The main optical axis of the collimating lens coincides with the light emitting direction of the laser chip.
The laser chip is arranged on the upper surface of the lower medium substrate, and the collimating lens is arranged in the groove of the lower medium substrate, so that the laser chip is positioned on the main optical axis of the collimating lens on one hand, the main optical axis of the collimating lens is overlapped with the light emitting direction of the laser chip, and the optimal light incidence angle is realized. On the other hand, the collimating lens is arranged on the lower dielectric substrate by forming the groove, so that the overall height is reduced, and the overall volume is further reduced.
In some embodiments, the light output end of the collimating lens is directed toward the sidewall of the middle layer dielectric substrate. The collimated laser output by the collimating lens passes through the side wall of the middle-layer dielectric substrate and horizontally exits.
Regarding the laser path, it should be noted that the light emitting direction of the laser chip and the main optical axis direction of the collimator lens may be along the horizontal direction. The main optical axis of the collimating lens points to the side wall of the middle-layer dielectric substrate, and the laser is horizontally emitted to the side wall of the middle-layer dielectric substrate after being collimated. The collimated laser passes through the side wall of the middle-layer dielectric substrate and exits along the horizontal direction.
In the first aspect, the middle dielectric substrate plays a role of structural support, and forms a closed cavity together with the upper and lower dielectric substrates. In a second aspect, the middle dielectric substrate acts as a laser transmissive. The middle dielectric substrate adopts an insulating semiconductor material corresponding to the laser wavelength, so that laser can transmit the side wall of the middle dielectric substrate. For example, laser light having wavelengths of 1310nm, 1540nm and 1550nm, and silicon may be used as the material transmitting the laser light.
The airtight packaging shell is of a three-layer dielectric substrate stacking structure made of insulating semiconductor materials, and the three-layer dielectric substrates are stacked to form a closed cavity which can be used for packaging the photoelectric hybrid integrated laser chip. The laser chip in the closed cavity can be electrically connected with the outside of the cavity through a thin film circuit arranged on the lower dielectric substrate. The laser in the horizontal direction generated by the laser chip can horizontally pass through the side wall of the middle-layer dielectric substrate after being collimated by the collimating lens to form horizontally emergent collimated laser.
The airtight packaging structure provided by the embodiment of the invention can be prepared by adopting a semiconductor process, has a size reaching a chip level, and reduces the volume of an airtight packaging shell compared with a metal box body structure adopting mechanical processing. For example, dielectric substrate structures of each layer can be prepared on a silicon wafer based on a semiconductor process, groove structures are prepared based on wet etching, and thin film circuits are prepared based on a semiconductor thin film process.
On the other hand, the laser of the invention is transmitted through the side wall of the medium substrate of the middle layer after being collimated, and can be coupled with the optical fiber outside the airtight packaging shell, so that the optical fiber is prevented from penetrating into the sealing structure, the size of the airtight packaging shell in the vertical direction is reduced, and the volume of the airtight packaging shell is reduced. The collimated and transmitted laser light may be coupled to the optical fiber through a condensing lens outside the hermetically sealed package. The outer space of the airtight packaging shell is larger, the adjustable range of the distance between the collimating lens and the condensing lens is larger, and the size of the inner space of the airtight packaging shell is not influenced.
Fig. 5 is a schematic three-dimensional structure of a lower dielectric substrate according to an embodiment of the present invention. Fig. 6 is a schematic top view of fig. 5 according to an embodiment of the present invention. Referring to fig. 5 and 6, in one possible implementation, the thin film circuit includes a dc power circuit and a radio frequency circuit.
By way of example, the direct current power supply circuit may be implemented to power the laser chip.
Illustratively, the DC power source circuit may alternatively comprise gold.
In one possible implementation, the radio frequency circuit includes one signal transmission line and two ground lines. The grounding wire is arranged at two sides of the signal transmission wire.
Illustratively, the signal transmission line may be denoted by S and the ground line may be denoted by G.
In the embodiment of the invention, radio frequency signals can be transmitted through the GSG coplanar waveguide formed by the radio frequency signal transmission line and the radio frequency grounding wire, and the signal wire electrode is surrounded into an unsealed semi-surrounding structure through the grounding wire electrode, so that the capability of shielding external noise interference is improved, parasitic parameters of the packaging structure in a high-frequency signal path are small, and the high-frequency performance of the device is effectively improved.
In one possible implementation, the signal transmission line is connected in series with a radio frequency matching unit.
The radio frequency matching unit is arranged between the lower medium substrate and the middle medium substrate.
The rf matching unit is an rf matching microstrip line with a different width from the signal transmission line. Further exemplary, by adjusting the linewidth of the rf matching unit, different impedance matching may be achieved.
The radio frequency matching unit further comprises a matching resistor.
According to the embodiment of the invention, on one hand, the radio frequency matching unit is positioned in the radio frequency signal transmission line, 50 ohm impedance of the radio frequency signal transmission line changes aiming at the overlapping part of the dielectric substrates, and the radio frequency matching unit is added, so that the high-frequency transmission performance can be improved, and the radio frequency reflection can be reduced. On the other hand, the radio frequency signal transmission line and the radio frequency matching unit can be prepared by adopting a film process, and a matching structure is directly arranged in the shell, and the matching structure is closer to the chip, and has high precision and good high-frequency performance.
In one possible implementation, the signal transmission line is connected to the laser chip by wire bonding.
For example, the laser chip may take the form of a front-side package with its front-side electrode connected to the signal transmission line by wire bonding.
In one possible implementation, the sidewalls of the box-shaped middle layer dielectric substrate are vertical sidewalls.
According to the embodiment of the invention, the side wall of the square middle-layer dielectric substrate is set as the vertical side wall, so that the light reflection loss outside the direction of the collimated laser can be reduced, the light signal loss is reduced, and the light-emitting efficiency is improved.
In one possible implementation, the side walls of the middle layer dielectric substrate are coated with an anti-reflection film.
Illustratively, the inner wall and the outer part of the middle-layer dielectric substrate are plated with an antireflection film.
Fig. 7 is a schematic three-dimensional structure of a stacked lower and middle dielectric substrates according to an embodiment of the present invention.
Fig. 8 is a schematic diagram of a lower surface structure of a middle dielectric substrate according to an embodiment of the present invention. Fig. 9 is a schematic diagram of the upper surface structure of a middle dielectric substrate according to an embodiment of the present invention. Fig. 10 is a schematic diagram of a lower surface structure of an upper dielectric substrate according to an embodiment of the present invention. Referring to fig. 7, 8, 9 and 10, in one possible implementation, a solder metal layer is disposed at the connection between the middle dielectric substrate and the upper and lower dielectric substrates. The welding metal layer is not communicated with the thin film circuit.
Fig. 11 is a schematic structural diagram of an airtight package assembly according to an embodiment of the present invention. Referring to fig. 11, the present invention provides a hermetically sealed package assembly of an optoelectronic hybrid integrated laser chip, comprising an optoelectronic hybrid integrated laser chip and a collimating lens, and a hermetically sealed package housing of any of the optoelectronic hybrid integrated laser chips described above.
Illustratively, the hermetically sealed package assembly further comprises: a thermistor chip and a backlight detector chip.
In one possible implementation manner, the airtight package assembly further includes: the optical fiber comprises a condensing lens and an optical fiber, wherein the condensing lens is used for receiving the collimated laser and focusing and coupling the collimated laser to the optical fiber.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting. Although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some of the technical features thereof can be replaced by equivalents. Such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A hermetically sealed package housing for an optoelectronic hybrid integrated laser chip, comprising: three layers of medium substrates are stacked from bottom to top; the dielectric substrate is made of an insulating semiconductor material;
The upper surface of the lower medium substrate is provided with a groove; the middle dielectric substrate is of a square frame structure; the lower medium substrate, the middle medium substrate and the upper medium substrate are stacked to form a closed cavity;
The upper surfaces of the lower dielectric substrate groove and the inner part of the closed cavity are used for arranging a laser chip;
The upper surface of the lower dielectric substrate is provided with a thin film circuit; the thin film circuit is connected with the inside and the outside of the closed cavity;
A collimating lens is arranged in the groove; the main optical axis of the collimating lens coincides with the light emitting direction of the laser chip; the light output end of the collimating lens faces the side wall of the middle-layer dielectric substrate; the collimated laser output by the collimating lens passes through the side wall of the middle-layer dielectric substrate and horizontally exits.
2. The hermetically sealed package of a optoelectric hybrid integrated laser chip of claim 1 wherein the thin film circuitry comprises a direct current power supply circuit and a radio frequency circuit.
3. The hermetically sealed package for an opto-electronic hybrid integrated laser chip of claim 2 wherein said radio frequency circuit comprises a signal transmission line and two ground lines; the grounding wire is arranged at two sides of the signal transmission wire.
4. The hermetically sealed package of an optoelectric hybrid integrated laser chip of claim 3 wherein the signal transmission line is serially connected with a radio frequency matching unit;
the radio frequency matching unit is arranged between the lower medium substrate and the middle medium substrate.
5. The hermetically sealed package of a optoelectric hybrid integrated laser chip of claim 4 wherein the signal transmission line is connected to the laser chip by wire bonding.
6. The hermetically sealed package of a optoelectric hybrid integrated laser chip of claim 1 wherein the side walls of the middle dielectric substrate are coated with an anti-reflection film.
7. The hermetically sealed package of a optoelectric hybrid integrated laser chip of claim 1 wherein a solder metal layer is provided at the junction of the middle dielectric substrate with the upper dielectric substrate and the lower dielectric substrate; the welding metal layer is not communicated with the thin film circuit.
8. The hermetically sealed package of a optoelectric hybrid integrated laser chip of claim 1 wherein the dielectric substrate material comprises silicon or quartz.
9. A hermetically sealed package assembly of an opto-electronic hybrid integrated laser chip, comprising an opto-electronic hybrid integrated laser chip and a collimating lens, and a hermetically sealed package housing of an opto-electronic hybrid integrated laser chip as defined in any one of claims 1 to 8.
10. The hermetically sealed package assembly of an opto-electronic hybrid integrated laser chip of claim 9, further comprising: the device comprises a condensing lens and an optical fiber, wherein the condensing lens is used for receiving collimated laser and focusing and coupling the collimated laser to the optical fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410197912.6A CN118174131A (en) | 2024-02-22 | 2024-02-22 | Airtight packaging shell and assembly of photoelectric hybrid integrated laser chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410197912.6A CN118174131A (en) | 2024-02-22 | 2024-02-22 | Airtight packaging shell and assembly of photoelectric hybrid integrated laser chip |
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| Publication Number | Publication Date |
|---|---|
| CN118174131A true CN118174131A (en) | 2024-06-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410197912.6A Pending CN118174131A (en) | 2024-02-22 | 2024-02-22 | Airtight packaging shell and assembly of photoelectric hybrid integrated laser chip |
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- 2024-02-22 CN CN202410197912.6A patent/CN118174131A/en active Pending
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