CN118170193A - Transient enhanced low dropout linear voltage regulator - Google Patents
Transient enhanced low dropout linear voltage regulator Download PDFInfo
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Abstract
The invention provides a transient enhanced low dropout linear voltage regulator, which comprises a differential amplifying circuit, a first voltage source, a second voltage source, a third voltage source and a fourth voltage source, wherein the differential amplifying circuit is configured to receive a reference signal and a feedback signal of a regulating feedback circuit and amplify and output voltage signals with opposite positive and negative directions; the ring oscillator is configured to receive the positive and negative opposite voltage signals output by the differential amplifying circuit and then output opposite frequency signals; the frequency comparator is configured to receive the opposite frequency signal output by the ring oscillator and then compare and output a frequency difference signal; the charge pump is configured to receive the frequency difference signal and control the starting quantity of the charge pump according to the frequency difference signal; and a regulation feedback circuit configured to regulate the output voltage according to the output signal of the charge pump and output a feedback signal. According to the change of the load VOUT, the invention outputs positive and negative voltages with opposite changes through the differential amplifying circuit, then generates frequency with opposite change trend through the ring oscillator, aggravates the change of frequency difference, and then accelerates the speed regulation through frequency comparison.
Description
Technical Field
The invention relates to the field of voltage regulators, in particular to a transient enhanced low dropout linear voltage regulator.
Background
A linear regulator (LDO) is a typical system for linear real-time control using a negative feedback mechanism in an analog integrated circuit. A block diagram of a typical low dropout linear regulator is shown in fig. 1.
Transient research of an LDO linear voltage regulator mainly focuses on transient response, namely transient pulse phenomenon of output voltage caused by step change of input voltage and output load and time for the output voltage to recover to be stable. The linear voltage regulator of the LDO generally supplies power to a low-voltage digital circuit, and the digital circuit often has switching between various working modes, so that when the digital circuit is subjected to step change, the output voltage change range of the LDO is necessarily within a nominal range, and the normal working of the circuit can be ensured. Meanwhile, the response speed of the LDO determines the capability of the load circuit to resume normal operation, so that the requirement on the LDO linear voltage regulator must have better transient characteristics, but the transient characteristics of the existing voltage regulator as shown in fig. 1 still have larger defects.
Disclosure of Invention
In order to solve the problems in the background technology, the invention provides a transient enhanced low dropout linear voltage regulator.
A transient enhanced low dropout linear regulator includes
A differential amplifying circuit configured to receive the reference signal and a feedback signal of the adjustment feedback circuit, and amplify and output a voltage signal having opposite positive and negative values;
the ring oscillator is configured to receive the voltage signals with opposite positive and negative directions output by the differential amplifying circuit and then output frequency signals with opposite changes;
the frequency comparator is configured to receive the opposite frequency signal output by the ring oscillator and then compare and output a frequency difference signal;
The charge pump is configured to receive the frequency difference signal and control the starting quantity of the charge pump according to the frequency difference signal;
And a regulation feedback circuit configured to regulate the output voltage according to the output signal of the charge pump and output a feedback signal.
Based on the above, the ring oscillator includes a first ring type oscillation circuit and a second ring type oscillation circuit, the input end of the first ring type oscillation circuit is connected with one output end of the differential amplifying circuit, and the output end of the first ring type oscillation circuit is connected with one input end of the frequency comparator; the input end of the second ring-shaped oscillating circuit is connected with the other output end of the differential amplifying circuit, and the output end of the second ring-shaped oscillating circuit is connected with the other input end of the frequency comparator; the frequency signal generated by the first ring-shaped oscillating circuit and the frequency signal generated by the second ring-shaped oscillating circuit are opposite in increase and decrease.
Based on the above, in the differential amplifying circuit, the source of the MOS transistor pmos_4 and the source of the MOS transistor pmos_5 are respectively connected to the power supply VDD, the gate of the MOS transistor pmos_4 and the gate of the MOS transistor pmos_5 are respectively connected to the bias voltage Vbais, the drain of the MOS transistor pmos_4 is connected to the drain of the MOS transistor nmos_5 and is used as an output terminal of the differential amplifying circuit to output the voltage signal v+, the gate of the MOS transistor nmos_5 is connected to the reference signal Vref, and the source of the MOS transistor nmos_5 is connected to the drain of the MOS transistor nmos_7; the drain electrode of the MOS tube PMOS_5 is connected with the drain electrode of the MOS tube NMOS_6 and used as the other output end of the differential amplifying circuit to output a voltage signal V-, the grid electrode of the MOS tube NMOS_6 is connected with a feedback signal Vfb, and the source electrode of the MOS tube NMOS_6 is connected with the drain electrode of the MOS tube NMOS_7; the inverting input end of the amplifier U1 is connected with the reference signal Vref, the non-inverting input end of the amplifier U1 is respectively connected with the drain electrode of the MOS tube PMOS_4 through the resistor R1, the drain electrode of the MOS tube PMOS_5 through the resistor R2, the output end of the amplifier U1 is connected with the grid electrode of the MOS tube NMOS_7, and the source electrode of the MOS tube NMOS_7 is grounded.
Based on the above, in the first ring oscillator, the sources of the MOS transistor pmos_1, the MOS transistor pmos_2, and the MOS transistor pmos_3 are respectively connected to the power supply VDD, the gate of the MOS transistor pmos_1, the gate of the MOS transistor nmos_1, the drain of the MOS transistor pmos_3, and the drain of the MOS transistor nmos_3 are commonly used as the frequency output end Fref of the ring oscillator, the drain of the MOS transistor pmos_1 is respectively connected to the gate of the MOS transistor pmos_2, the drain of the MOS transistor nmos_1, and the gate of the MOS transistor nmos_2, the drain of the MOS transistor pmos_2 is respectively connected to the gate of the MOS transistor pmos_3, the drain of the MOS transistor nmos_2, and the drain of the MOS transistor nmos_3 are respectively connected to the drain of the MOS transistor nmos_4, and the gate of the MOS transistor nmos_4 is connected to the output end v+ of the differential amplifier circuit, and the source of the MOS transistor nmos_4 is grounded.
Based on the above, in the second ring oscillator, the sources of the MOS transistor pmos_7, the MOS transistor pmos_8 and the MOS transistor pmos_9 are respectively connected to the power supply VDD, the gates of the MOS transistor pmos_7, the MOS transistor nmos_8, the drains of the MOS transistor pmos_9 and the MOS transistor nmos_10 are jointly used as the other frequency output terminal fb of the ring oscillator, the drains of the MOS transistor pmos_7 are respectively connected to the gates of the MOS transistor pmos_8, the MOS transistor nmos_8 and the MOS transistor nmos_9, the MOS transistor pmos_8 is respectively connected to the gates of the MOS transistor pmos_9, the MOS transistor nmos_9 and the MOS transistor nmos_10, the MOS transistor nmos_8, the MOS transistor nmos_9 and the MOS transistor nmos_10 are respectively connected to the drain of the MOS transistor nmos_11, and the gate of the MOS transistor nmos_11 is connected to the output terminal V-, and the source of the MOS transistor nmos_11 is grounded.
Based on the above, in the first ring oscillator, the source of the MOS transistor pmos_41 is connected to the power supply VDD, the gate of the MOS transistor pmos_41 is connected to the output terminal V of the differential amplifier, the drain of the MOS transistor pmos_41 is connected to the source of the MOS transistor pmos_1, the drain of the MOS transistor pmos_2, and the source of the MOS transistor pmos_3, the gate of the MOS transistor pmos_1, the drain of the MOS transistor pmos_3, and the drain of the MOS transistor nmos_3 are commonly used as the one frequency output terminal Fref of the ring oscillator, the drain of the MOS transistor pmos_1 is connected to the gate of the MOS transistor pmos_2, the drain of the MOS transistor nmos_1, and the gate of the MOS transistor nmos_2, and the drain of the MOS transistor pmos_2 are connected to the gate of the MOS transistor pmos_3, the drain of the MOS transistor nmos_2, and the source of the MOS transistor nmos_3 are grounded, respectively.
Based on the above, in the second ring oscillator, the source of the MOS transistor pmos_42 is connected to the power supply VDD, the gate of the MOS transistor pmos_42 is connected to the output terminal v+ of the differential amplifier, the drain of the MOS transistor pmos_42 is connected to the source of the MOS transistor pmos_7, the drain of the MOS transistor pmos_8, the gate of the MOS transistor pmos_7, the drain of the MOS transistor nmos_8, and the drain of the MOS transistor nmos_10 together serve as the other frequency output terminal Ffb of the ring oscillator, the drain of the MOS transistor pmos_7 is connected to the gate of the MOS transistor pmos_8, the drain of the MOS transistor nmos_8, and the gate of the MOS transistor nmos_9, the drain of the MOS transistor pmos_8 is connected to the gate of the MOS transistor pmos_9, the drain of the MOS transistor nmos_9, and the gate of the MOS transistor nmos_10, respectively, and the source of the MOS transistor nmos_8, are grounded.
Based on the above, the charge pump is a dual-control charge pump, and when the frequency difference output by the frequency comparator exceeds the preset threshold, the switches UP1 and UP2 or the switches DN1 and DN2 in the charge pump are turned on simultaneously.
Based on the above, the adjusting feedback circuit comprises a power tube pmos_12, the source electrode of the power tube pmos_12 is connected with the power supply VDD, the gate electrode of the power tube pmos_12 is connected with the output end of the charge pump, the drain electrode of the power tube pmos_12 is grounded through a resistor R15 and a resistor R16 in sequence, and the differential amplifying circuit is connected with the drain electrode of the power tube pmos_12 through the resistor R15 and receives the feedback signal; the drain of the power transistor pmos_12 is also used as the output terminal of the voltage regulator.
Based on the above, the drain of the power transistor pmos_12 is also grounded through the resistor R17 and the capacitor C2.
Compared with the prior art, the invention has outstanding substantive characteristics and remarkable progress, and concretely, the invention feeds back to the input port of the differential amplifying circuit according to the change of the load Vout, the differential amplifying circuit outputs voltages with opposite positive and negative directions and opposite changes, the opposite frequencies are generated through the ring oscillator, one frequency is increased, the other frequency is decreased, the frequency comparison is carried out in the frequency comparator, the number of the charge pumps which are started is changed according to the magnitude of the frequency difference, the change of the grid voltage of the power tube is accelerated to be regulated, the load change is regulated, and the stable state is restored. The structure utilizes two-channel ring oscillators to generate frequencies with opposite change trends, wherein one frequency is increased, the other frequency is reduced, the change of frequency difference is aggravated, and the speed is accelerated and adjusted through frequency comparison.
Drawings
Fig. 1 is a schematic block diagram of a conventional voltage regulator according to the present invention.
Fig. 2 is a schematic block diagram of the structure of the voltage regulator of the present invention.
Fig. 3 is a schematic circuit diagram of a differential amplifying circuit according to the present invention.
Fig. 4 is a schematic circuit diagram of an embodiment of a ring oscillator of the present invention.
Fig. 5 is a circuit diagram of another embodiment of a ring oscillator according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 2, a transient enhanced low dropout linear regulator includes a differential amplifying circuit configured to receive a reference signal and a feedback signal of a regulation feedback circuit, and amplify and output a voltage signal having opposite positive and negative polarities; the ring oscillator is configured to receive the voltage signals with opposite positive and negative directions output by the differential amplifying circuit and then output frequency signals with opposite changes; the frequency comparator is configured to receive the opposite frequency signal output by the ring oscillator and then compare and output a frequency difference signal; the charge pump is configured to receive the frequency difference signal and control the starting quantity of the charge pump according to the frequency difference signal; and a regulation feedback circuit configured to regulate the output voltage according to the output signal of the charge pump and output a feedback signal.
When the load Vout is used, the change of the load Vout is fed back and input to the input port of the differential amplification circuit, the differential amplification circuit outputs two voltage signals V+ and V-, which are opposite in positive and negative and opposite in change, the two voltage signals V+ and V-are respectively input into two paths of oscillating circuits of the ring oscillator, two opposite frequency signals are generated through the ring oscillator, one frequency signal is increased, and the other frequency signal is reduced. And inputting the two frequency signals into a frequency comparator, comparing the frequencies in the frequency comparator, changing the starting number of the charge pumps according to the frequency difference of the two frequency signals, and accelerating the adjustment of the change of the grid voltage of the power tube PMOS_12, further adjusting the change of the load and recovering to a stable state. The structure utilizes the two-channel ring oscillator to generate frequencies with opposite change trends, wherein one frequency is increased, the other frequency is reduced, the change of frequency difference is aggravated, and the speed is accelerated and regulated through frequency comparison, so that the transient characteristic is enhanced.
Specifically, as shown in fig. 3, in the differential amplifying circuit, the source of the MOS transistor pmos_4 and the source of the MOS transistor pmos_5 are respectively connected to the power supply VDD, the gate of the MOS transistor pmos_4 and the gate of the MOS transistor pmos_5 are respectively connected to the bias voltage Vbais (Vbias is a bias voltage, which may be generated by other parts), the drain of the MOS transistor pmos_4 is connected to the drain of the MOS transistor nmos_5 and is used as an output end of the differential amplifying circuit to output the voltage signal v+, the gate of the MOS transistor nmos_5 is connected to the reference signal Vref, and the source of the MOS transistor nmos_5 is connected to the drain of the MOS transistor nmos_7; the drain electrode of the MOS tube PMOS_5 is connected with the drain electrode of the MOS tube NMOS_6 and used as the other output end of the differential amplifying circuit to output a voltage signal V-, the grid electrode of the MOS tube NMOS_6 is connected with a feedback signal Vfb, and the source electrode of the MOS tube NMOS_6 is connected with the drain electrode of the MOS tube NMOS_7; the inverting input end of the amplifier U1 is connected with the reference signal Vref, the non-inverting input end of the amplifier U1 is respectively connected with the drain electrode of the MOS tube PMOS_4 through the resistor R1, the drain electrode of the MOS tube PMOS_5 through the resistor R2, the output end of the amplifier U1 is connected with the grid electrode of the MOS tube NMOS_7, and the source electrode of the MOS tube NMOS_7 is grounded. By utilizing the fully differential amplification structure, V+ and V-with opposite changing directions are generated as the input of the ring oscillator.
As shown in fig. 4, in the first ring oscillator embodiment, sources of the MOS transistor pmos_1, the MOS transistor pmos_2 and the MOS transistor pmos_3 are respectively connected to the power supply VDD, a gate of the MOS transistor pmos_1, a gate of the MOS transistor nmos_1, a drain of the MOS transistor pmos_3 and a drain of the MOS transistor nmos_3 are commonly used as a frequency output end Fref of the ring oscillator, a drain of the MOS transistor pmos_1 is respectively connected to a gate of the MOS transistor pmos_2, a drain of the MOS transistor nmos_1 and a gate of the MOS transistor nmos_2, a drain of the MOS transistor pmos_2 is respectively connected to a gate of the MOS transistor pmos_3, a drain of the MOS transistor nmos_2 and a gate of the MOS transistor nmos_3 are respectively connected to a drain of the MOS transistor nmos_4, and a gate of the MOS transistor nmos_4 is connected to a source of the MOS transistor nmos_4 and an output end v+ of the differential amplifier circuit. In the second ring-shaped oscillating circuit, the sources of the MOS transistor PMOS_7, the MOS transistor PMOS_8 and the MOS transistor PMOS_9 are respectively connected with a power supply VDD, the grid of the MOS transistor PMOS_7, the grid of the MOS transistor NMOS_8, the drain of the MOS transistor PMOS_9 and the drain of the MOS transistor NMOS_10 are jointly used as the other frequency output end Ffb of the ring-shaped oscillator, the drain of the MOS transistor PMOS_7 is respectively connected with the grid of the MOS transistor PMOS_8, the drain of the MOS transistor NMOS_8 and the grid of the MOS transistor NMOS_9, the drain of the MOS transistor PMOS_8 is respectively connected with the grid of the MOS transistor PMOS_9, the drain of the MOS transistor NMOS_9 and the grid of the MOS transistor NMOS_10, the source of the MOS transistor NMOS_8, the drain of the MOS transistor NMOS_9 and the drain of the MOS transistor NMOS_11 are respectively connected with the drain of the MOS transistor NMOS_11, and the grid of the MOS transistor NMOS_11 is connected with one output end V-, and the source of the MOS transistor NMOS_11 is grounded. The frequency Fref generated by the ring oscillator is opposite to the frequency Ffb, the frequency change trend is opposite, one end is increased, the other end is decreased, and the frequency difference between the frequency Fref and the Ffb is larger, the frequency comparator generates a multi-path control signal, and the conduction of a switch in the charge pump is controlled. When the frequency difference between the two exceeds a preset threshold, the frequency comparator outputs a control signal to enable a switch UP1 (in the embodiment, the switch UP1 and the switch UP2 are actually PMOS tubes) and a switch UP2 in the charge pump to be simultaneously opened (or the switch DN1 and the switch DN2 are simultaneously opened, in the embodiment, the switch DN1 and the switch DN2 are actually NMOS tubes), so that transient response is enhanced and power consumption is reduced. If the frequency difference between the two is smaller, the number of the switches is changed, and the power consumption is reduced. The two structures have the same principle, and the frequency is controllable by controlling the bias voltage.
The adjusting feedback circuit comprises a power tube PMOS_12, a source electrode of the power tube PMOS_12 is connected with a power supply VDD, a grid electrode of the power tube PMOS_12 is connected with an output end of the charge pump, a drain electrode of the power tube PMOS_12 is grounded through a resistor R15 and a resistor R16 in sequence, and the differential amplifying circuit is connected with the drain electrode of the power tube PMOS_12 through the resistor R15 and receives a feedback signal; the drain of the power transistor pmos_12 is also used as the output terminal of the voltage regulator. The drain electrode of the power tube PMOS_12 is grounded through a resistor R17 and a capacitor C2, and the filtering effect on output signals is achieved. And through the output of the charge pump, the grid voltage change of the power tube is regulated in an accelerating way, so that the load change is regulated, and the stable state is recovered.
QUOTE /> ①
QUOTE /> ②
QUOTE />Is the gain of the ring oscillator VCO; QUOTE/> />Differential pressure QUOTE/>, which is a differential output />； QUOTE/> />Is the frequency at which the VCO remains in steady state (when QUOTE/> />When). QUOTE/> />Is a frequency change due to a differential output change (QUOTE/>, when static) />0).
N represents the number of stages of the ring oscillator, vsw represents the voltage difference range of the ring oscillator (VDD-3 VDS in static state), cp is the load capacitance after each inverter stage, ib is the current through the ring oscillator.
Pushing out
QUOTE />And QUOTE/> />When the differential output end changes, the change trend of the differential output end and the differential output end are opposite, so that QUOTE/> />The more the variation.
The invention has the advantages that:
① By utilizing a feedforward mode, the load voltage change is converted into frequency, the larger the load change is, the frequency difference is increased, the control speed of the charge pump can be increased, and the rapid transient response is realized.
② The fully differential amplifying circuit generates two frequencies with opposite changes by utilizing the load change, wherein one frequency is increased, and the other frequency is decreased, so that the frequency difference is larger, the reaction time is shortened, and the transient response is further enhanced.
③ The power consumption is reduced, the dynamic power consumption of the circuit is reduced compared with that of a common LDO, the circuit frequency is changed along with the change of the load, the circuit frequency can be effectively and adaptively changed, when the load is heavy, the frequency can be increased, the adjustment time is reduced, and the power consumption of the total circuit can be reduced.
④ The grading double-control switch controls the charging and discharging paths, when the circuit load changes, the frequency comparator can generate different output signals according to the frequency difference of the grading double-control switch and the circuit load, the number of the switches of the charge pump is controlled, and the transient response speed is greatly increased.
⑤ The full differential structure control can reduce the influence of noise on a circuit, improve the stability of the circuit, and simultaneously quicken the response speed and improve the transient response performance of the LDO.
Example 2
As shown in fig. 5, another embodiment of the ring oscillator is different from the embodiment of the ring oscillator in fig. 4 only in the positions of the MOS transistors at the input end and the corresponding types, and the operation principle and the functions are similar.
In the first ring oscillator circuit, a source electrode of the MOS transistor PMOS_41 is connected with a power supply VDD, a grid electrode of the MOS transistor PMOS_41 is connected with an output end V-of the differential amplifying circuit, a drain electrode of the MOS transistor PMOS_41 is respectively connected with a grid electrode of the MOS transistor PMOS_1, a grid electrode of the MOS transistor PMOS_2 and a source electrode of the MOS transistor PMOS_3, a grid electrode of the MOS transistor PMOS_1, a grid electrode of the MOS transistor NMOS_3 and a drain electrode of the MOS transistor NMOS_3 are jointly used as a frequency output end Fref of the ring oscillator, a drain electrode of the MOS transistor PMOS_1 is respectively connected with a grid electrode of the MOS transistor PMOS_2, a drain electrode of the MOS transistor NMOS_1 and a grid electrode of the MOS transistor NMOS_2, a drain electrode of the MOS transistor PMOS_3 are respectively connected with a grid electrode of the MOS transistor PMOS_3, a drain electrode of the MOS transistor NMOS_2 and a grid electrode of the MOS transistor NMOS_3, and a source electrode of the MOS transistor NMOS_3 are respectively grounded. In the second ring-shaped oscillating circuit, a source electrode of the MOS transistor PMOS_42 is connected with a power supply VDD, a grid electrode of the MOS transistor PMOS_42 is connected with an output end V+ of the differential amplifying circuit, a drain electrode of the MOS transistor PMOS_42 is respectively connected with a grid electrode of the MOS transistor PMOS_7, a grid electrode of the MOS transistor PMOS_8 and a source electrode of the MOS transistor PMOS_9, a grid electrode of the MOS transistor PMOS_7, a grid electrode of the MOS transistor NMOS_8, a drain electrode of the MOS transistor PMOS_9 and a drain electrode of the MOS transistor NMOS_10 are jointly used as another frequency output end Fb of the ring-shaped oscillator, a drain electrode of the MOS transistor PMOS_7 is respectively connected with a grid electrode of the MOS transistor PMOS_8, a drain electrode of the MOS transistor NMOS_8 and a grid electrode of the MOS transistor NMOS_9, and a source electrode of the MOS transistor NMOS_10 are respectively grounded.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A low dropout linear regulator with transient enhancement, characterized by: comprising
A differential amplifying circuit configured to receive the reference signal and a feedback signal of the adjustment feedback circuit, and amplify and output a voltage signal having opposite positive and negative values;
the ring oscillator is configured to receive the voltage signals with opposite positive and negative directions output by the differential amplifying circuit and then output frequency signals with opposite changes;
the frequency comparator is configured to receive the opposite frequency signal output by the ring oscillator and then compare and output a frequency difference signal;
The charge pump is configured to receive the frequency difference signal and control the starting quantity of the charge pump according to the frequency difference signal;
And a regulation feedback circuit configured to regulate the output voltage according to the output signal of the charge pump and output a feedback signal.
2. The transient enhanced low dropout linear regulator according to claim 1, wherein: the ring oscillator comprises a first ring type oscillating circuit and a second ring type oscillating circuit, wherein the input end of the first ring type oscillating circuit is connected with one output end of the differential amplifying circuit, and the output end of the first ring type oscillating circuit is connected with one input end of the frequency comparator; the input end of the second ring-shaped oscillating circuit is connected with the other output end of the differential amplifying circuit, and the output end of the second ring-shaped oscillating circuit is connected with the other input end of the frequency comparator; the frequency signal generated by the first ring-shaped oscillating circuit and the frequency signal generated by the second ring-shaped oscillating circuit are opposite in increase and decrease.
3. The transient enhanced low dropout linear regulator according to claim 1, wherein: in the differential amplifying circuit, a source electrode of the MOS transistor PMOS_4 and a source electrode of the MOS transistor PMOS_5 are respectively connected with a power supply VDD, a grid electrode of the MOS transistor PMOS_4 and a grid electrode of the MOS transistor PMOS_5 are respectively connected with a bias voltage Vbais, a drain electrode of the MOS transistor PMOS_4 is connected with a drain electrode of the MOS transistor NMOS_5 and is used as an output end of the differential amplifying circuit to output a voltage signal V+, a grid electrode of the MOS transistor NMOS_5 is connected with a reference signal Vref, and a source electrode of the MOS transistor NMOS_5 is connected with a drain electrode of the MOS transistor NMOS_7; the drain electrode of the MOS tube PMOS_5 is connected with the drain electrode of the MOS tube NMOS_6 and used as the other output end of the differential amplifying circuit to output a voltage signal V-, the grid electrode of the MOS tube NMOS_6 is connected with a feedback signal Vfb, and the source electrode of the MOS tube NMOS_6 is connected with the drain electrode of the MOS tube NMOS_7; the inverting input end of the amplifier U1 is connected with the reference signal Vref, the non-inverting input end of the amplifier U1 is respectively connected with the drain electrode of the MOS tube PMOS_4 through the resistor R1, the drain electrode of the MOS tube PMOS_5 through the resistor R2, the output end of the amplifier U1 is connected with the grid electrode of the MOS tube NMOS_7, and the source electrode of the MOS tube NMOS_7 is grounded.
4. The transient enhanced low dropout linear regulator according to claim 2, wherein: in the first ring-shaped oscillating circuit, sources of the MOS transistor PMOS_1, the MOS transistor PMOS_2 and the MOS transistor PMOS_3 are respectively connected with a power supply VDD, a grid electrode of the MOS transistor PMOS_1, a grid electrode of the MOS transistor NMOS_1, a drain electrode of the MOS transistor PMOS_3 and a drain electrode of the MOS transistor NMOS_3 are jointly used as a frequency output end Fref of the ring-shaped oscillator, a drain electrode of the MOS transistor PMOS_1 is respectively connected with a grid electrode of the MOS transistor PMOS_2, a drain electrode of the MOS transistor NMOS_1 and a grid electrode of the MOS transistor NMOS_2, a drain electrode of the MOS transistor PMOS_2 is respectively connected with a grid electrode of the MOS transistor PMOS_3, a drain electrode of the MOS transistor NMOS_2 and a source electrode of the MOS transistor NMOS_3 are respectively connected with a drain electrode of the MOS transistor NMOS_4, and a grid electrode of the MOS transistor NMOS_4 is connected with an output end V+ of the differential amplifying circuit and a source electrode of the MOS transistor NMOS_4 is grounded.
5. The transient enhanced low dropout linear regulator according to claim 2, wherein: in the second ring-shaped oscillating circuit, the sources of the MOS transistor PMOS_7, the MOS transistor PMOS_8 and the MOS transistor PMOS_9 are respectively connected with a power supply VDD, the grid of the MOS transistor PMOS_7, the grid of the MOS transistor NMOS_8, the drain of the MOS transistor PMOS_9 and the drain of the MOS transistor NMOS_10 are jointly used as the other frequency output end Ffb of the ring-shaped oscillator, the drain of the MOS transistor PMOS_7 is respectively connected with the grid of the MOS transistor PMOS_8, the drain of the MOS transistor NMOS_8 and the grid of the MOS transistor NMOS_9, the drain of the MOS transistor PMOS_8 is respectively connected with the grid of the MOS transistor PMOS_9, the drain of the MOS transistor NMOS_9 and the grid of the MOS transistor NMOS_10, the source of the MOS transistor NMOS_8, the drain of the MOS transistor NMOS_9 and the drain of the MOS transistor NMOS_11 are respectively connected with the drain of the MOS transistor NMOS_11, and the grid of the MOS transistor NMOS_11 is connected with one output end V-, and the source of the MOS transistor NMOS_11 is grounded.
6. The transient enhanced low dropout linear regulator according to claim 2, wherein: in the first ring oscillator circuit, a source electrode of the MOS transistor PMOS_41 is connected with a power supply VDD, a grid electrode of the MOS transistor PMOS_41 is connected with an output end V-of the differential amplifying circuit, a drain electrode of the MOS transistor PMOS_41 is respectively connected with a grid electrode of the MOS transistor PMOS_1, a grid electrode of the MOS transistor PMOS_2 and a source electrode of the MOS transistor PMOS_3, a grid electrode of the MOS transistor PMOS_1, a grid electrode of the MOS transistor NMOS_3 and a drain electrode of the MOS transistor NMOS_3 are jointly used as a frequency output end Fref of the ring oscillator, a drain electrode of the MOS transistor PMOS_1 is respectively connected with a grid electrode of the MOS transistor PMOS_2, a drain electrode of the MOS transistor NMOS_1 and a grid electrode of the MOS transistor NMOS_2, a drain electrode of the MOS transistor PMOS_3 are respectively connected with a grid electrode of the MOS transistor PMOS_3, a drain electrode of the MOS transistor NMOS_2 and a grid electrode of the MOS transistor NMOS_3, and a source electrode of the MOS transistor NMOS_3 are respectively grounded.
7. The transient enhanced low dropout linear regulator according to claim 2, wherein: in the second ring-shaped oscillating circuit, a source electrode of the MOS transistor PMOS_42 is connected with a power supply VDD, a grid electrode of the MOS transistor PMOS_42 is connected with an output end V+ of the differential amplifying circuit, a drain electrode of the MOS transistor PMOS_42 is respectively connected with a grid electrode of the MOS transistor PMOS_7, a grid electrode of the MOS transistor PMOS_8 and a source electrode of the MOS transistor PMOS_9, a grid electrode of the MOS transistor PMOS_7, a grid electrode of the MOS transistor NMOS_8, a drain electrode of the MOS transistor PMOS_9 and a drain electrode of the MOS transistor NMOS_10 are jointly used as another frequency output end Fb of the ring-shaped oscillator, a drain electrode of the MOS transistor PMOS_7 is respectively connected with a grid electrode of the MOS transistor PMOS_8, a drain electrode of the MOS transistor NMOS_8 and a grid electrode of the MOS transistor NMOS_9, and a source electrode of the MOS transistor NMOS_10 are respectively grounded.
8. The transient enhanced low dropout linear regulator according to claim 1, wherein: the charge pump is a double-control charge pump, and when the frequency difference output by the frequency comparator exceeds a preset threshold value, the switches UP1 and UP2 or the switches DN1 and DN2 in the charge pump are simultaneously opened.
9. The transient enhanced low dropout linear regulator according to claim 1, wherein: the adjusting feedback circuit comprises a power tube PMOS_12, a source electrode of the power tube PMOS_12 is connected with a power supply VDD, a grid electrode of the power tube PMOS_12 is connected with an output end of the charge pump, a drain electrode of the power tube PMOS_12 is grounded through a resistor R15 and a resistor R16 in sequence, and the differential amplifying circuit is connected with the drain electrode of the power tube PMOS_12 through the resistor R15 and receives a feedback signal; the drain of the power transistor pmos_12 is also used as the output terminal of the voltage regulator.
10. The transient enhanced low dropout linear regulator according to claim 9, wherein: the drain of the power tube pmos_12 is also grounded through a resistor R17 and a capacitor C2.
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| CN202410098470.XA CN118170193A (en) | 2024-01-24 | 2024-01-24 | Transient enhanced low dropout linear voltage regulator |
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