CN118143263A - Nano silver paper and preparation method and application thereof - Google Patents
Nano silver paper and preparation method and application thereof Download PDFInfo
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- CN118143263A CN118143263A CN202410136588.7A CN202410136588A CN118143263A CN 118143263 A CN118143263 A CN 118143263A CN 202410136588 A CN202410136588 A CN 202410136588A CN 118143263 A CN118143263 A CN 118143263A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 145
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002042 Silver nanowire Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 238000007731 hot pressing Methods 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000001291 vacuum drying Methods 0.000 claims description 8
- 239000010413 mother solution Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 4
- 238000012858 packaging process Methods 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 238000007865 diluting Methods 0.000 claims description 2
- 239000003085 diluting agent Substances 0.000 claims description 2
- 239000011195 cermet Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 238000005520 cutting process Methods 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- 238000005219 brazing Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010345 tape casting Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000005456 alcohol based solvent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Landscapes
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
The invention discloses a nano silver paper and a preparation method and application thereof. The nano silver paper provided by the invention has the characteristics of paper-like character, certain strength, mechanical cutting, simple preparation process, high production efficiency, high batch stability, mass production, high yield, uniform and controllable film thickness and surface density, realization of low-temperature packaging interconnection, high thermal conductivity, high conductivity, low porosity, high service reliability and the like when being used as a novel thermal interface material.
Description
Technical Field
The invention belongs to the field of packaging of power electronic power modules (IGBT modules and rectifying modules), relates to nano silver paper, a preparation method and application thereof, and particularly relates to a preparation method and application of nano silver paper for packaging and interconnecting power semiconductor devices such as power chips, large-size substrates and radiators.
Background
Along with the higher integration of the power electronic power module, the current density of the power device is higher, the heating density of the whole device is increased, the requirements on the heat dissipation performance and service reliability of the device are higher, and the requirements on the thermal interface material are higher. The melting point of the traditional Sn-based brazing alloy is generally lower than 250 ℃, and a third-generation novel power semiconductor chip represented by SiC can continuously work at the temperature above 250 ℃, so that the Sn-based brazing alloy completely does not meet the high-temperature high-frequency working environment of a third-generation semiconductor, and the service reliability of the Sn-based brazing alloy is seriously affected. The nano silver paste has high use process requirement, and influences the packaging efficiency of the power device; the nano silver film is too thin and fragile to be suitable for packaging of large-sized substrates.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and particularly provides a nano silver paper which has paper properties, proper thickness and certain tensile strength and can be cut mechanically, and a preparation method and application thereof, aiming at the technical problems of insufficient Sn-based solder performance, and insufficient technological adaptability and use performance of a nano silver film and a nano silver paste in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme.
The preparation method of the nano silver paper comprises the following steps:
(1) Diluting the silver nanowire mother solution to obtain silver nanowire dispersion liquid;
(2) Solid-liquid separation is carried out on the silver nanowire dispersion liquid under the negative pressure of 0.05-0.2 MPa to form paste, and then solid-liquid separation is carried out under the positive pressure of 0.1-1 MPa until no liquid drips out, thus obtaining wet nano silver paper;
(3) Rinsing the wet nano silver paper to purify the wet nano silver paper, so as to obtain pure nano silver paper;
(4) Vacuum drying is carried out on pure nano silver paper, and then low-temperature hot pressing is carried out at the temperature of 120-150 ℃ and the pressure of 3-5 MPa, thus obtaining the nano silver paper.
In the above preparation method of nano silver paper, preferably, in the step (1), the diluent is one or more of water, an alcohol solvent and an alkane solvent, wherein the water comprises deionized water, the alcohol solvent comprises one or more of absolute ethyl alcohol, n-propyl alcohol and isobutanol, and the alkane solvent comprises one or two of n-hexane and cyclohexane; the concentration of silver nanowires in the silver nanowire dispersion is 1 g/L-5 g/L, the diameter of the silver nanowires is 10 nm-200 nm, and the length of the silver nanowires is 1 mu m-50 mu m.
In the above preparation method of nano silver paper, preferably, in the step (2), the liquid level of the silver nanowire dispersion liquid is not disturbed during solid-liquid separation under negative pressure.
In the above method for preparing nano silver paper, preferably, in the step (3), the rinsing is performed for 2-10 times by using acid-base solution, water and alcohol solvents.
In the above preparation method of nano silver paper, preferably, in the step (4), the temperature of vacuum drying is 40-80 ℃, the time of vacuum drying is 5-10 min, and the time of low-temperature hot pressing is 1-5 min.
The invention also provides the nano silver paper prepared by the preparation method of the nano silver paper.
The thickness of the nano silver paper is preferably 60-300 mu m, the surface density is 150g/m 2～900g/m2, the density is 0.5g/cm 3～3g/cm3, the thickness fluctuation of the nano silver paper is less than 5%, the density fluctuation is less than 5%, the tensile strength is 2-5 MPa, and the impurity content is less than 0.7%.
The invention also provides the nano silver paper prepared by the preparation method or the application of the nano silver paper in power electronic power device packaging.
The application is preferable, the application comprises one of package interconnection between a large-area chip and a substrate and package interconnection between an oversized substrate and a radiator, the large-area chip is a square chip with the length of more than or equal to 10mm and the width of more than or equal to 10mm or a round chip with the diameter of more than or equal to 10mm, the chip comprises a Si-based chip, a GaAs chip, an InP chip/GaN or a SiC chip, the length of the oversized substrate is more than or equal to 40mm or the width of the oversized substrate is more than or equal to 40mm, and the oversized substrate comprises an oversized metal substrate, an oversized copper-clad ceramic substrate or an oversized metal-ceramic composite substrate.
In the application, preferably, the packaging is performed by adopting a hot-pressing packaging process, wherein the hot-pressing packaging process is carried out for 3-10 min under the conditions of the temperature of 180-300 ℃ and the pressure of 10-20 MPa, after the hot-pressing packaging, the thermal conductivity of a nano silver paper interface layer is more than 260W/(m.K), the porosity is less than 5%, the interface bonding strength is 60-100 MPa, and the interface thermal resistance is less than 1.5mm 2·K·W-1.
In the invention, the silver nanowire mother solution can be prepared by adopting an alcohol heating method, and the silver nanowire can be purchased commercially as the prior art.
The nano silver paper is a novel thermal interface material, can realize low-temperature packaging interconnection (the hot-pressing process temperature is 180-300 ℃) and is Wen Fuyi (the theoretical service temperature can reach more than 700 ℃), has certain strength, can be mechanically cut and transferred, and has simple and efficient process, so that the nano silver paper is particularly suitable for packaging high-power large-size high-service reliability devices. The nano silver paper can be produced in batches and is mainly used for packaging power electronic power devices (IGBT modules, rectifying modules and the like) in the fields of high-efficiency electric energy conversion and ultra-high voltage control, such as flexible voltage direct current transmission, rail transit, new energy automobiles, phased array radars and the like, and comprises large-area chips (more than or equal to 10 multiplied by 10 mm) of Si, siC and the like, and oversized (more than or equal to 40 multiplied by 40 mm) metal substrates (such as copper, molybdenum and the like), copper-clad ceramic substrates or package interconnections between ceramic-metal composite boards and radiators.
The nano silver paper prepared by the method has the characteristics similar to paper, has certain strength, can be mechanically cut, has simple preparation process, high production efficiency and high batch stability, can be produced in batches, has high yield, has uniform and controllable film thickness and density, and can realize low-temperature packaging interconnection and high-temperature service.
Compared with the prior art, the invention has the advantages that:
(1) Performance advantage: the bonding strength of the traditional Sn brazing filler metal is generally about 30MPa, the melting point is low, and the high-temperature reliability in the power module package is not satisfied. The interface layer of the novel thermal interface material nano silver paper after hot-pressing packaging is close to a compact block silver structure, the interface bonding strength is 60-100 MPa, and the high-temperature service reliability is better.
(2) Packaging interconnect process advantages:
The conventional Sn brazing filler metal needs to be welded under the conditions of high vacuum degree and low oxygen content, and the conditions are harsh. The nano silver paste needs to be aligned with the substrate and the radiator by dispensing and high-precision assembly processes, equipment is imported, the cost is high, the nano silver paste contains a solvent and an organic adhesive, and in order to obtain a compact sintering structure, the processes of solvent volatilization, high-temperature glue discharge and compact sintering are needed at low temperature for a long time, so that the process control is complex, and the efficiency is low. The nano silver film is very thin and only 40-60 mu m, the requirements on the surface flatness and the matching degree of a large-size substrate and a radiator and the packaging technological process are extremely high, the tissue distribution uniformity of an interface after hot-pressing packaging is difficult to ensure, the service reliability of the nano silver film is seriously affected, the nano silver film is formed by nano silver particles and extremely fragile, special inlet equipment is required to realize cutting and transferring of silver paper, the cost is high, and the later maintenance cost is high.
The novel thermal interface material nano silver paper has proper thickness, can be regulated within the range of 60-300 mu m, has certain strength, can be mechanically cut, can be manually transferred, is suitable for packaging various large-size chips, substrates and radiators, has no strict requirements on the surface flatness of devices and the matching degree among the devices, has a low melting point effect, can be used in an aerobic environment, has the hot pressing time of 3-10 min, and is high-efficiency and rapid in packaging.
(3) The preparation process has the advantages that:
In the preparation process of the nano silver paste and the nano silver film, a solvent and an organic adhesive are required to be added, the selection of raw materials is critical, the nano silver film is prepared by adopting a tape casting method, the thickness uniformity of the silver film can be ensured by adopting an imported tape casting machine, and long-time adhesive discharge is required after tape casting.
The novel thermal interface material nano silver paper can be prepared by adopting domestic equipment, and the nano silver paper with small thickness fluctuation and good batch stability can be prepared only under the double external force effects of negative pressure and positive pressure, so that the preparation process is simple and the cost is low.
(4) The storage process has the advantages that:
The nano silver paste is prepared from nano particles, the nano silver particles are easy to agglomerate in the storage process, the later dispensing performance and the service performance are affected, the nano silver paste is required to be stored at the temperature of-40 ℃ to-20 ℃, and the temperature is required to be returned for a long time before the nano silver paste is used. The nano silver paper is a single dry substance, can be stored for a long time in an aerobic environment at room temperature and does not influence the performance.
Drawings
FIG. 1 is a graph of the macroscopic morphology of the nano-silver paper prepared in example 1 of the present invention.
Fig. 2 is a microscopic morphology graph of the nano silver paper prepared in example 1 of the present invention.
Fig. 3 is a schematic drawing showing the cutting of the nano silver paper prepared in example 1 of the present invention.
Fig. 4 is a schematic structural diagram of a nano silver paper package as a thermal interface material in embodiment 1 of the present invention.
Fig. 5 is a surface micro topography diagram of the nano silver paper prepared in example 1 of the present invention after hot press encapsulation.
Fig. 6 is a cross-sectional microscopic morphology diagram of an interfacial layer after hot-press packaging of nano silver paper prepared in example 1 of the present invention.
Fig. 7 is a schematic structural diagram of a nano silver paper package as a thermal interface material in embodiment 2 of the present invention.
Detailed Description
The invention is further described below in connection with the drawings and the specific preferred embodiments, but the scope of protection of the invention is not limited thereby. The materials and instruments used in the examples below are all commercially available.
Example 1
The preparation method of the nano silver paper comprises the following steps:
(1) 2L of silver nanowire mother solution is taken, 2L of absolute ethyl alcohol is added and stirred uniformly, and silver nanowire dispersion liquid is obtained, wherein the concentration of silver nanowires in the dispersion liquid is 2.5g/L, the diameter of the silver nanowires is 100-150 nm, and the length of the silver nanowires is 30-50 mu m.
In this embodiment, the silver nanowire mother solution is prepared by an alcohol thermal method, and the process is as follows: adding ethylene glycol, PVP (polyvinylpyrrolidone) solution (0.5 mol/L dissolved in the ethylene glycol) and FeCl 3 solution (3 mmol/L dissolved in the ethylene glycol) into a glass reaction kettle according to the volume ratio of 1:18:9, adding silver nitrate solution (0.3 mol/L dissolved in the ethylene glycol when the temperature of the reaction solution is increased to 120-150 ℃, keeping the temperature for 5h when the volume ratio of the silver nitrate solution to PVP solution is 1:1), and turning off a heating device when the reaction solution is silver gray or silver white, and cooling to obtain the silver nanowire mother solution.
(2) And (3) carrying out solid-liquid separation on the silver nanowire dispersion liquid under the negative pressure of 0.1MPa, wherein no disturbance of the liquid level is found by naked eyes, closing the negative pressure after the silver nanowire dispersion liquid is separated into paste, carrying out solid-liquid separation under the positive pressure of 0.3MPa until no liquid drops out, and taking out silver paper after pressure relief to obtain the wet nano silver paper. In the present embodiment, a sheet machine may be used to provide solid-liquid separation of negative pressure and positive pressure, but is not limited thereto.
(3) And respectively rinsing the wet nano silver paper twice in 40wt% KOH solution, deionized water and absolute ethyl alcohol to obtain pure nano silver paper.
(4) Vacuum drying pure nanometer silver paper at 40deg.C for 5min, cutting square silver paper of 13.6mm×13.6mm according to the size of power chip, and hot-pressing at 150deg.C under 3MPa for 2min to obtain nanometer silver paper. The thickness of the nano silver paper is 65+/-2 mu m, the surface density is 160+/-5 g/m 2, the density is 2.5+/-0.1 g/cm 3, the tensile strength of the nano silver paper is 4MPa, and the impurity content is 0.57%. The macroscopic and microscopic morphologies of the nano silver paper are shown in fig. 1 and 2, the nano silver paper has a macroscopic paper-like shape and can be mechanically cut, and the nano silver paper is a microscopic lapping structure of nano silver wires as shown in fig. 3.
As shown in fig. 4, the nano silver paper of the embodiment is used for packaging interconnection between a chip and a substrate, wherein a power chip with the size of 13.6mm ×13.6mm, the nano silver paper prepared by the embodiment with the size of 13.6mm ×13.6mm and a silver-plated molybdenum matrix with the size of 50 mm ×60mm are stacked and then placed in a packaging mold, and are subjected to hot pressing for 3min under the conditions of 250 ℃ and 10MPa to perform packaging interconnection, the interface bonding strength is 60MPa, the interface thermal resistance is 0.5 mm 2·K·W-1, the porosity is 4.8%, and the thermal conductivity of a silver paper layer is 280W/(m·k) -1. The surface morphology and the section morphology of the interface layer after hot pressing are shown in figures 5 and 6, the surface is in a compact sintering structure, a large number of fine grains are separated out, the section is in a compact sintering structure, and no micron-sized holes exist.
Example 2
The preparation method of the nano silver paper comprises the following steps:
(1) 6L of silver nanowire mother solution (the preparation method is referred to example 1 and is also commercially available) is taken, 9L of deionized water at 40 ℃ is added and stirred uniformly, and then silver nanowire dispersion liquid is obtained, wherein the concentration of silver nanowires in the dispersion liquid is 2g/L, the diameter of the silver nanowires is 50-90 nm, and the length of the silver nanowires is 1-5 mu m.
(2) And (3) carrying out solid-liquid separation on the silver nanowire dispersion liquid under the negative pressure of 0.2MPa, wherein no disturbance of the liquid level is found, closing the negative pressure after the silver nanowire dispersion liquid is separated into paste, carrying out solid-liquid separation under the positive pressure of 0.5MPa until no liquid drips out, closing the positive pressure, releasing the pressure, and taking out the silver paper to obtain the wet nano silver paper.
(3) And respectively rinsing the wet nano silver paper in 10wt% acetic acid solution, deionized water and absolute ethyl alcohol for 5 times to obtain pure nano silver paper.
(4) Vacuum drying pure nanometer silver paper at 80deg.C for 10min, cutting square silver paper of 60mm×60mm according to the size of the substrate, and hot-pressing at 150deg.C under 5MPa for 5min to obtain nanometer silver paper. The thickness of the nano silver paper is 180+/-5 mu m, the surface density is 450+/-17 g/m 2, the density is 2.7+/-0.1 g/cm 3, the tensile strength of the nano silver paper is 3MPa, and the impurity content is 0.62%.
As shown in fig. 7, the nano silver paper is used for packaging interconnection between a substrate and a radiator in the embodiment, three layers of a silver-plated red copper substrate with the size of 60mm multiplied by 60mm, the nano silver paper with the size of 60mm multiplied by 60mm and the radiator with the size of 65mm multiplied by 65mm are stacked and then placed into a packaging mold, and are subjected to hot pressing for 10min at 250 ℃ and 15MPa to perform packaging interconnection, wherein the interface bonding strength is 100MPa, the interface thermal resistance is 0.8mm 2·K·W-1, the porosity is 4.3%, and the thermal conductivity of a silver paper layer is 280W/(m·k) -1.
The above description is only of the preferred embodiment of the present invention, and is not intended to limit the present invention in any way. While the invention has been described in terms of preferred embodiments, it is not intended to be limiting. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present invention or equivalent embodiments using the method and technical solution disclosed above without departing from the spirit and technical solution of the present invention. Therefore, any simple modification, equivalent substitution, equivalent variation and modification of the above embodiments according to the technical substance of the present invention, which do not depart from the technical solution of the present invention, still fall within the scope of the technical solution of the present invention.
Claims (10)
1. The preparation method of the nano silver paper is characterized by comprising the following steps of:
(1) Diluting the silver nanowire mother solution to obtain silver nanowire dispersion liquid;
(2) Solid-liquid separation is carried out on the silver nanowire dispersion liquid under the negative pressure of 0.05-0.2 MPa to form paste, and then solid-liquid separation is carried out under the positive pressure of 0.1-1 MPa until no liquid drips out, thus obtaining wet nano silver paper;
(3) Rinsing the wet nano silver paper to purify the wet nano silver paper, so as to obtain pure nano silver paper;
(4) Vacuum drying is carried out on pure nano silver paper, and then low-temperature hot pressing is carried out at the temperature of 120-150 ℃ and the pressure of 3-5 MPa, thus obtaining the nano silver paper.
2. The method for preparing nano-silver paper according to claim 1, wherein in the step (1), the diluent is one or more of water, an alcohol solvent and an alkane solvent, the water comprises deionized water, the alcohol solvent comprises one or more of absolute ethanol, n-propanol and isobutanol, and the alkane solvent comprises one or two of n-hexane and cyclohexane; the concentration of silver nanowires in the silver nanowire dispersion is 1 g/L-5 g/L, the diameter of the silver nanowires is 10 nm-200 nm, and the length of the silver nanowires is 1 mu m-50 mu m.
3. The method for producing nano-silver paper according to claim 1 or 2, wherein in the step (2), the liquid level of the silver nanowire dispersion is not disturbed when the silver nanowire dispersion is subjected to solid-liquid separation under negative pressure.
4. The method for preparing nano silver paper according to claim 1 or 2, wherein in the step (3), the rinsing is carried out for 2 to 10 times by adopting acid-base solution, water and alcohol solvent.
5. The method for preparing nano silver paper according to claim 1 or 2, wherein in the step (4), the vacuum drying temperature is 40-80 ℃, the vacuum drying time is 5-10 min, and the low-temperature hot pressing time is 1-5 min.
6. A nano silver paper produced by the method for producing a nano silver paper according to any one of claims 1 to 5.
7. The nano-silver paper according to claim 6, wherein the nano-silver paper has a thickness of 60-300 μm, an areal density of 150g/m 2～900g/m2, a density of 0.5g/cm 3～3g/cm3, a thickness fluctuation of < 5%, a density fluctuation of < 5%, a tensile strength of 2-5 MPa, and an impurity content of < 0.7%.
8. Use of the nano silver paper prepared by the preparation method of any one of claims 1 to 5 or the nano silver paper of claim 6 or 7 in power electronic power device packaging.
9. The use of claim 8, wherein the use comprises one of package interconnections between a large area chip and a substrate, a square chip having a length of 10mm or more and a width of 10mm or a round chip having a diameter of 10mm or more, a chip comprising a Si-based chip, a GaAs chip, an InP chip/GaN or a SiC chip, a package interconnection between an oversized substrate having a length of 40mm or more and a width of 40mm or more, and a package interconnection between an oversized substrate comprising an oversized metal substrate, an oversized copper-clad ceramic substrate or an oversized cermet composite substrate.
10. The use according to claim 9, wherein the packaging is performed by a thermocompression packaging process, the thermocompression packaging process is performed for 3min to 10min under the conditions of 180 ℃ to 300 ℃ and 10MPa to 20MPa, after thermocompression packaging, the thermal conductivity of the nano silver paper interface layer is more than 260W/(m·k), the porosity is less than 5%, the interface bonding strength is 60MPa to 100MPa, and the interface thermal resistance is less than 1.5mm 2·K·W-1.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410136588.7A CN118143263A (en) | 2024-01-31 | 2024-01-31 | Nano silver paper and preparation method and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410136588.7A CN118143263A (en) | 2024-01-31 | 2024-01-31 | Nano silver paper and preparation method and application thereof |
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| Publication Number | Publication Date |
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| CN118143263A true CN118143263A (en) | 2024-06-07 |
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| CN202410136588.7A Pending CN118143263A (en) | 2024-01-31 | 2024-01-31 | Nano silver paper and preparation method and application thereof |
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| Country | Link |
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| CN (1) | CN118143263A (en) |
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