CN118099279A - Gallium oxide film photoelectric detector and preparation method thereof - Google Patents
Gallium oxide film photoelectric detector and preparation method thereof Download PDFInfo
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- CN118099279A CN118099279A CN202410216090.1A CN202410216090A CN118099279A CN 118099279 A CN118099279 A CN 118099279A CN 202410216090 A CN202410216090 A CN 202410216090A CN 118099279 A CN118099279 A CN 118099279A
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 116
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 47
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000000137 annealing Methods 0.000 claims abstract description 34
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 106
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a gallium oxide film photoelectric detector and a preparation method thereof, wherein the preparation method comprises the following steps: s1, providing a substrate; s2, growing a gallium oxide film layer on the substrate by adopting a radio frequency magnetron sputtering method, and applying bias voltage to the substrate in the process of sputtering the gallium oxide film layer; s3, annealing the gallium oxide film layer; s4, growing a silicon dioxide pattern layer on the gallium oxide film layer; s5, preparing interdigital electrodes, namely enabling interdigital parts of the interdigital electrodes to be alternately distributed on the gallium oxide film layer, enabling interdigital connecting parts to be located on the silicon dioxide graph layer, and annealing the interdigital electrodes to enable ohmic contact between the interdigital parts and the gallium oxide film layer to be formed, so that the gallium oxide film photoelectric detector is obtained. The method solves the problems of insufficient film crystallinity, higher device preparation cost, high dark current, low response speed and the like of the traditional method.
Description
Technical Field
The invention belongs to the technical field of photoelectric detection, and particularly relates to a gallium oxide film photoelectric detector and a preparation method thereof.
Background
The ultraviolet photoelectric detector can detect ultraviolet rays with the wavelength of 200-300 nm, the ultraviolet rays smaller than the wave band can be absorbed by ozone when passing through the atmosphere, and the ultraviolet rays with the wave band hardly exist on the surface of the earth, so that the deep ultraviolet photoelectric detector can hardly be interfered by sunlight when working, the anti-interference capability of the detector is very strong, the detection precision and sensitivity are also higher, and the ultraviolet photoelectric detector can be widely applied to civil fields such as ultraviolet communication, medical imaging, power grid safety monitoring, flame detection, field search and rescue and the like, and can also be applied to national defense fields such as secret communication, early warning and accurate guidance and the like. This has led to the expansion of the application of photodetectors to a wider area, and therefore, there is also a higher demand for their performance.
The band gap of the gallium oxide material is 4.6 eV-5.1 eV, the absorption coefficient near the absorption edge is up to 105cm -1, the electron mobility is up to 300cm 2/Vs, the dielectric constant is up to 10, the maximum breakdown electric field of 8MV/cm can be tolerated, the application of the device can be realized under severe conditions, and the gallium oxide material has great application potential in the field of ultraviolet detectors.
The existing gallium oxide photoelectric detection device has room for improvement in high light responsivity, quantum efficiency, low dark current and other performances, and conventional preparation methods such as magnetron sputtering, metal organic vapor deposition, molecular beam epitaxy and the like have different problems, such as low film crystallization quality, overlong production period, high equipment cost and the like. Therefore, the existing preparation method of the gallium oxide photoelectric detection device has the problems of insufficient film crystallinity, higher device preparation cost, high dark current, low response speed and the like.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a gallium oxide thin film photoelectric detector and a preparation method thereof. The technical problems to be solved by the invention are realized by the following technical scheme:
The embodiment of the invention provides a preparation method of a gallium oxide film photoelectric detector, which comprises the following steps:
s1, providing a substrate;
s2, growing a gallium oxide film layer on the substrate by adopting a radio frequency magnetron sputtering method, and applying bias voltage to the substrate in the process of sputtering the gallium oxide film layer;
S3, annealing the gallium oxide film layer;
s4, growing a silicon dioxide pattern layer on the gallium oxide film layer;
S5, preparing interdigital electrodes, namely enabling interdigital parts of the interdigital electrodes to be alternately distributed on the gallium oxide film layer, enabling interdigital connecting parts to be located on the silicon dioxide graph layer, and annealing the interdigital electrodes to enable ohmic contact between the interdigital parts and the gallium oxide film layer to be formed, so that the gallium oxide film photoelectric detector is obtained.
In one embodiment of the invention, the material of the substrate comprises one or more of silicon, quartz glass, sapphire (0001).
In one embodiment of the present invention, step S2 includes:
Exciting argon glow discharge by adopting a radio frequency bias power supply to generate argon plasma so as to sputter and clean the surface of the substrate; wherein, the conditions of the sputter cleaning include: argon pressure is 8 mTorr-10 mTorr, the power of the radio frequency bias power supply is 45W-55W, the sputtering cleaning time is 15 min-20 min, and the background vacuum degree of the deposition cavity is 7X 10 -7Torr～3×10-6 Torr;
Depositing the gallium oxide film layer on the surface of the substrate subjected to sputtering cleaning by adopting a radio frequency magnetron sputtering method, and applying bias voltage to the substrate in the process of sputtering the gallium oxide film layer; wherein, the radio frequency power is 120w ~ 200w, and the sputtering gas includes argon gas and oxygen, and the gas flow rate ratio of argon gas and oxygen is 3:1, the air pressure is 8 mTorr-10 mTorr, the growth temperature is 600 ℃ to 700 ℃, the deposition time is 120 min-240 min, the rotation speed of the substrate is 10 rpm-20 rpm, the target base distance is 120 mm-150 mm, and the bias power is 1 w-5 w.
In one embodiment of the present invention, the thickness of the gallium oxide thin film layer is 200nm to 400nm.
In one embodiment of the present invention, step S3 includes:
And (3) annealing the gallium oxide film layer by using a tube furnace, wherein the annealing temperature is 800-1000 ℃, the heating rate of the annealing is 8-12 ℃/min, the annealing time is 60-180 min, and the annealing atmosphere is oxygen.
In one embodiment of the present invention, step S4 includes:
Preparing a silicon dioxide mask layer on the gallium oxide film layer by using a photoetching development method;
Depositing silicon dioxide on the silicon dioxide mask layer and the gallium oxide film layer by using an inductively coupled plasma chemical vapor deposition method;
and stripping the silicon dioxide mask layer and the silicon dioxide on the silicon dioxide mask layer to form a silicon dioxide pattern layer.
In one embodiment of the invention, the thickness of the silicon dioxide pattern layer is 20nm to 40nm.
In one embodiment of the present invention, step S5 includes:
Preparing an electrode mask layer on the surface of a sample by using a photoetching development method;
Placing the sample in an electron beam evaporation table to deposit electrode metal;
Stripping the electrode mask layer and electrode metal on the surface of the electrode mask layer to obtain the interdigital electrode;
And annealing the interdigital electrode to form ohmic contact with the gallium oxide film layer, wherein the annealing temperature is 800-900 ℃, the heating rate is 10-20 ℃/s, and the annealing time is 20-40 s.
In one embodiment of the present invention, the material of the interdigital electrode includes a titanium metal layer, an aluminum metal layer, a nickel metal layer and a gold metal layer which are stacked, wherein the thickness of the titanium metal layer is 20nm to 40nm, the thickness of the aluminum metal layer is 100nm to 150nm, the thickness of the nickel metal layer is 40nm to 60nm, and the thickness of the gold metal layer is 40nm to 60nm.
Another embodiment of the present invention provides a gallium oxide thin film photodetector, which is manufactured by the manufacturing method described in the above embodiment, including: the device comprises a substrate, a gallium oxide film layer, a silicon dioxide graph layer and an interdigital electrode, wherein the gallium oxide film layer is positioned on the substrate, the silicon dioxide graph layer is distributed on the gallium oxide film layer and forms ohmic contact with the gallium oxide film layer, interdigital parts of the interdigital electrode are alternately distributed on the gallium oxide film layer, and interdigital connecting parts are positioned on the silicon dioxide graph layer.
Compared with the prior art, the invention has the beneficial effects that:
According to the preparation method, bias voltage is applied to the substrate in the process of exciting the gallium oxide film layer, so that the sputtering process is optimized, the grain orientation of the gallium oxide film can be grown preferentially with high quality, the crystallinity of the film is improved, the photo-dark current of the obtained photoelectric detector is higher, and the preparation cost is lower; meanwhile, the oxidizer film is annealed at a preset temperature and a preset heating rate, so that the response speed of the device is effectively improved; therefore, the method solves the problems of insufficient film crystallinity, higher device preparation cost, high dark current, low response speed and the like of the traditional method.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing a gallium oxide thin film photodetector according to an embodiment of the invention;
FIG. 2 is a schematic structural diagram of a gallium oxide thin film photodetector according to an embodiment of the present invention;
FIG. 3 is a XRD contrast plot of a high temperature annealed gallium oxide film with and without a substrate bias provided in accordance with an embodiment of the present invention;
FIG. 4 is a photo-dark current diagram of a high performance gallium oxide thin film photodetector according to an embodiment of the invention;
FIG. 5 is a graph showing the response speed of a high performance gallium oxide thin film photodetector according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing a gallium oxide thin film photodetector according to an embodiment of the invention. The preparation method comprises the following steps:
S1, providing a substrate.
Specifically, the material of the substrate includes one or more of silicon, quartz glass, and sapphire (0001). Preferably, the substrate is made of two-inch sapphire (0001), the lattice structure of the substrate is relatively close to that of gallium oxide, the dislocation of the grown gallium oxide film is low, and the crystallization quality is better.
Further, loading the substrate into a clamping groove, pouring acetone organic solution which is enough to submerge the clamping groove into a beaker, and putting the clamping groove into the beaker to enable the substrate to be completely immersed into the organic solution; then, the substrate is cleaned by ultrasonic wave, wherein the cleaning time is as follows: 5-10 min, the ultrasonic power is: 100W; then, the substrate was taken out of the organic solution and put into a beaker of isopropanol solution which was able to submerge the card slot to remove the acetone solution, and the substrate was cleaned with ultrasonic waves, wherein the cleaning time was: 5-10 min, the ultrasonic power is: 100W; and then taking out the substrate slice, drying the substrate by utilizing nitrogen, and finally placing the substrate in a sputtering vacuum chamber.
S2, growing a gallium oxide film layer on the substrate by adopting a radio frequency magnetron sputtering method, and applying bias voltage to the substrate in the process of sputtering the gallium oxide film layer.
Firstly, exciting argon glow discharge by adopting a radio frequency bias power supply to generate argon plasma so as to sputter and clean the surface of a substrate; wherein, the conditions of the sputter cleaning include: the argon pressure is 8 mTorr-10 mTorr, the power of the radio frequency bias power supply is 45W-55W, the sputtering cleaning time is 15 min-20 min, and the background vacuum degree of the deposition cavity is 7X 10 -7Torr～3×10-6 Torr.
Illustratively, a substrate to be placed in a vacuum chamber is transferred by a robot arm into a deposition chamber, wherein the deposition chamber has a background vacuum of 7X 10 -7Torr～3×10-6 Torr. Then, adopting a radio frequency bias power supply to excite argon glow discharge, generating argon plasma to sputter and clean the surface of the substrate, and firstly introducing argon gas pressure as follows: 8 mTorr-10 mTorr, then turning on the radio frequency source, wherein the power of the radio frequency bias power supply is as follows: 45W-55W, the sputtering cleaning time is as follows: 15 min-20 min.
It should be noted that, the substrate is not limited to passing through the vacuum chamber and being transferred by a mechanical arm, so long as the substrate is finally placed in the deposition chamber, and the background vacuum degree of the deposition chamber is 7×10 -7Torr～3×10-6 Torr, for example, the deposition chamber may be directly opened to place the substrate, and then the deposition chamber is vacuumized.
And then, depositing a gallium oxide film layer on the surface of the substrate subjected to sputtering cleaning by adopting a radio frequency magnetron sputtering method, and applying bias voltage to the substrate in the process of sputtering the gallium oxide film layer. The radio frequency power is 120 w-200 w, the sputtering gas comprises argon and oxygen, and the gas flow rate ratio of the argon to the oxygen is 3:1, the air pressure is 8 mTorr-10 mTorr, the growth temperature is 600 ℃ to 700 ℃, the deposition time is 120 min-240 min, the rotation speed of the substrate is 10 rpm-20 rpm, the target base distance is 120 mm-150 mm, and the bias power applied to the substrate is 1 w-5 w.
Specifically, the thickness of the gallium oxide film layer is 200 nm-400 nm.
In the embodiment, bias voltage is applied to the substrate in the sputtering process, so that the energy of particle bombardment of the substrate in the sputtering is increased, the sputtering process window is optimized, the crystallization quality of the gallium oxide film can be effectively promoted, and the problem of low crystallinity of the gallium oxide film in the radio frequency magnetron sputtering in the prior art is solved.
And S3, annealing the gallium oxide film layer.
Specifically, after the gallium oxide film is grown, the gallium oxide film is placed into a tube furnace, oxygen is introduced for annealing after vacuumizing, the annealing treatment temperature is 800-1000 ℃, the heating rate of the annealing treatment is 8-12 ℃/min, and the annealing treatment time is 60-180 min.
And S4, growing a silicon dioxide pattern layer on the gallium oxide film layer.
The preparation process of the silicon dioxide pattern layer comprises the steps of cleaning, drying, spin coating, pre-drying, exposure, development, fixation, post-drying, silicon dioxide deposition and stripping which are sequentially carried out. The specific process is as follows:
First, a silicon dioxide mask layer is prepared on a gallium oxide film layer by using a photolithography development method.
Specifically, the preparation of the silicon dioxide mask layer comprises the steps of cleaning, drying, spin coating, pre-drying, exposure, development, fixation and post-drying which are sequentially carried out. Wherein, wash: cleaning a film sample by adopting acetone and isopropanol solution, and drying by high-purity nitrogen after cleaning; and (3) drying: placing the cleaned film on a heating table for drying, wherein the temperature is set to be 90-110 ℃ and the time is 80-100 s; and (3) homogenizing: placing the film sample on a spin coater, dripping AZ6130 photoresist on the film surface for spin coating, wherein the rotating speed is 3000-5000 rpm, and the time is 40-60 s; pre-baking: placing the film sample on a heating table for pre-baking at 90-110 ℃ for 80-100 s; exposure: placing the film sample under a photoetching plate for exposure for 2-4 s; developing: placing the film sample into RX3038 developing solution, wherein the developing time is 30-60 s; fixing: putting the film sample into deionized water, and fixing for 40-60 s; post-baking: and placing the film sample on a heating table for post-baking, wherein the temperature is 90-110 ℃, and baking for 80-100 s.
And then, depositing silicon dioxide on the silicon dioxide mask layer and the gallium oxide film layer by using an inductively coupled plasma chemical vapor deposition method.
Specifically, a thin film sample is placed in a media deposition system: and (3) depositing silicon dioxide in the inductively coupled plasma chemical vapor deposition (ICPPECVD) to obtain a silicon dioxide pattern layer of 20-40 nm on the surface of the gallium oxide film sample.
And finally, stripping the silicon dioxide mask layer and the silicon dioxide on the silicon dioxide mask layer to form a silicon dioxide pattern layer.
Specifically, the film sample is soaked in acetone, and the residual glue is removed and then dried.
S5, preparing the interdigital electrode, wherein interdigital parts of the interdigital electrode are alternately distributed on the gallium oxide film layer, interdigital connecting parts are positioned on the silicon dioxide pattern layer, and annealing the interdigital electrode to enable the interdigital parts and the gallium oxide film layer to form ohmic contact, so that the gallium oxide film photoelectric detector is obtained.
The preparation process of the interdigital electrode comprises the steps of cleaning, drying, spin coating, pre-drying, exposure, development, fixation, post-drying, silicon dioxide deposition and stripping which are sequentially carried out. The specific process is as follows:
First, an electrode mask layer is prepared on the surface of a sample by using a photolithography developing method.
Specifically, the preparation of the electrode mask layer comprises the steps of cleaning, drying, spin coating, pre-drying, exposure, development, fixation and post-drying which are sequentially carried out. Wherein, wash: cleaning a film sample by adopting acetone and isopropanol solution, and drying by high-purity nitrogen after cleaning; and (3) drying: placing the cleaned film on a heating table for drying, wherein the temperature is set to be 90-110 ℃ and the time is 80-100 s; and (3) homogenizing: placing the film sample on a spin coater, dripping AZ6130 photoresist on the film surface for spin coating, wherein the rotating speed is 3000-5000 rpm, and the time is 40-60 s; pre-baking: placing the film sample on a heating table for pre-baking at 90-110 ℃ for 80-100 s; exposure: placing the film sample under a photoetching plate for exposure for 2-4 s; developing: placing the film sample into RX3038 developing solution, wherein the developing time is 30-60 s; fixing: putting the film sample into deionized water, and fixing for 40-60 s; post-baking: and placing the film sample on a heating table for post-baking, wherein the temperature is 90-110 ℃, and baking for 80-100 s.
The sample is then placed in an electron beam evaporation station to deposit the electrode metal.
Specifically, a film sample is placed in an electron beam evaporation table to sequentially deposit titanium metal, aluminum metal, nickel metal and gold metal, and a titanium metal layer of 20 nm-40 nm, an aluminum metal layer of 100 nm-150 nm, a nickel metal layer of 40 nm-60 nm and a gold metal layer of 40 nm-60 nm are obtained on the surface of the sample.
And then stripping the electrode mask layer and electrode metal on the surface of the electrode mask layer to obtain the interdigital electrode.
Specifically, a film sample is placed in acetone for soaking, excessive residual glue is removed, and then the film sample is dried to obtain interdigital electrodes, interdigital parts of the interdigital electrodes are alternately distributed on a gallium oxide film layer, and interdigital connecting parts are positioned on a silicon dioxide pattern layer.
And finally, annealing the interdigital electrode to enable the interdigital part and the gallium oxide film layer to form ohmic contact.
Specifically, the gallium oxide photoelectric detection is put into a rapid annealing furnace for high-temperature annealing, so that ohmic contact is formed between the interdigital part and the gallium oxide film layer. Wherein the annealing temperature is 800-900 ℃, the heating rate is 10-20 ℃/s, and the annealing time is (high temperature maintenance) 20-40 s.
The preparation method of the embodiment applies bias to the substrate in the process of exciting the gallium oxide film layer, optimizes the sputtering process, can realize the preferred high-quality growth of the gallium oxide film grain orientation, improves the film crystallinity, and has higher photo-dark current of the obtained photoelectric detector and lower preparation cost; meanwhile, the oxidizer film is annealed at a preset temperature and a preset heating rate, so that the response speed of the device is effectively improved; therefore, the method solves the problems of insufficient film crystallinity, higher device preparation cost, high dark current, low response speed and the like of the traditional method.
Example two
On the basis of the first embodiment, please refer to fig. 2, fig. 2 is a schematic structural diagram of a gallium oxide thin film photodetector according to an embodiment of the present invention. The gallium oxide film photoelectric detector is prepared by the preparation method in the first embodiment, and comprises the following steps: the substrate 10, the gallium oxide film layer 20, the silicon dioxide pattern layer 30 and the interdigital electrode 40, wherein the gallium oxide film layer 20 is positioned on the substrate 10, the silicon dioxide pattern layer 30 is distributed on the gallium oxide film layer 20 and forms ohmic contact with the gallium oxide film layer 20, interdigital parts of the interdigital electrode 40 are alternately distributed on the gallium oxide film layer 20, and interdigital connecting parts are positioned on the silicon dioxide pattern layer 30.
Referring to fig. 3, fig. 3 is an XRD contrast chart of a gallium oxide film after high-temperature annealing with and without a substrate bias provided in an embodiment of the present invention, where (a) in fig. 3 is the diffraction intensity of a gallium oxide crystal plane occurring when the gallium oxide film without a substrate bias is subjected to XRD full spectrum scanning, and (b) in fig. 3 is the diffraction intensity of a gallium oxide crystal plane occurring when the gallium oxide film with a substrate bias is subjected to XRD full spectrum scanning. As can be seen from fig. 3, the diffraction peaks are significantly enhanced after the substrate bias is applied, indicating that the application of the substrate bias is advantageous for gallium oxide thin film crystal growth.
Referring to fig. 4, fig. 4 is a photo-dark current diagram of a high performance gallium oxide thin film photodetector according to an embodiment of the invention. In fig. 4, the light-dark current ratio of the gallium oxide thin film photodetector can reach 10 4.
Referring to fig. 5, fig. 5 is a response speed curve of a high performance gallium oxide thin film photodetector according to an embodiment of the invention. As can be seen from FIG. 5, the gallium oxide thin film photodetector has a fast response speed to light and dark current, the rise time is 0.5s, and the fall time is 0.3s.
The photodetector of the embodiment has higher film crystallinity, lower dark current and higher response speed.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. The preparation method of the gallium oxide film photoelectric detector is characterized by comprising the following steps:
s1, providing a substrate;
s2, growing a gallium oxide film layer on the substrate by adopting a radio frequency magnetron sputtering method, and applying bias voltage to the substrate in the process of sputtering the gallium oxide film layer;
S3, annealing the gallium oxide film layer;
s4, growing a silicon dioxide pattern layer on the gallium oxide film layer;
S5, preparing interdigital electrodes, namely enabling interdigital parts of the interdigital electrodes to be alternately distributed on the gallium oxide film layer, enabling interdigital connecting parts to be located on the silicon dioxide graph layer, and annealing the interdigital electrodes to enable ohmic contact between the interdigital parts and the gallium oxide film layer to be formed, so that the gallium oxide film photoelectric detector is obtained.
2. The method of manufacturing a gallium oxide thin film photodetector of claim 1, wherein said substrate material comprises one or more of silicon, quartz glass, sapphire (0001).
3. The method for manufacturing a gallium oxide thin film photodetector according to claim 1, wherein step S2 comprises:
Exciting argon glow discharge by adopting a radio frequency bias power supply to generate argon plasma so as to sputter and clean the surface of the substrate; wherein, the conditions of the sputter cleaning include: argon pressure is 8 mTorr-10 mTorr, the power of the radio frequency bias power supply is 45W-55W, the sputtering cleaning time is 15 min-20 min, and the background vacuum degree of the deposition cavity is 7X 10 -7Torr～3×10- 6 Torr;
Depositing the gallium oxide film layer on the surface of the substrate subjected to sputtering cleaning by adopting a radio frequency magnetron sputtering method, and applying bias voltage to the substrate in the process of sputtering the gallium oxide film layer; wherein, the radio frequency power is 120w ~ 200w, and the sputtering gas includes argon gas and oxygen, and the gas flow rate ratio of argon gas and oxygen is 3:1, the air pressure is 8 mTorr-10 mTorr, the growth temperature is 600 ℃ to 700 ℃, the deposition time is 120 min-240 min, the rotation speed of the substrate is 10 rpm-20 rpm, the target base distance is 120 mm-150 mm, and the bias power is 1 w-5 w.
4. The method for manufacturing a gallium oxide thin film photodetector according to claim 1, wherein the thickness of the gallium oxide thin film layer is 200nm to 400nm.
5. The method for manufacturing a gallium oxide thin film photodetector according to claim 1, wherein step S3 comprises:
And (3) annealing the gallium oxide film layer by using a tube furnace, wherein the annealing temperature is 800-1000 ℃, the heating rate of the annealing is 8-12 ℃/min, the annealing time is 60-180 min, and the annealing atmosphere is oxygen.
6. The method for manufacturing a gallium oxide thin film photodetector according to claim 1, wherein step S4 comprises:
Preparing a silicon dioxide mask layer on the gallium oxide film layer by using a photoetching development method;
Depositing silicon dioxide on the silicon dioxide mask layer and the gallium oxide film layer by using an inductively coupled plasma chemical vapor deposition method;
and stripping the silicon dioxide mask layer and the silicon dioxide on the silicon dioxide mask layer to form a silicon dioxide pattern layer.
7. The method for manufacturing a gallium oxide thin film photodetector according to claim 1, wherein the thickness of the silicon dioxide pattern layer is 20nm to 40nm.
8. The method for manufacturing a gallium oxide thin film photodetector according to claim 1, wherein step S5 comprises:
Preparing an electrode mask layer on the surface of a sample by using a photoetching development method;
Placing the sample in an electron beam evaporation table to deposit electrode metal;
Stripping the electrode mask layer and electrode metal on the surface of the electrode mask layer to obtain the interdigital electrode;
And annealing the interdigital electrode to form ohmic contact with the gallium oxide film layer, wherein the annealing temperature is 800-900 ℃, the heating rate is 10-20 ℃/s, and the annealing time is 20-40 s.
9. The method for manufacturing a gallium oxide thin film photodetector according to claim 1, wherein the material of the interdigital electrode comprises a titanium metal layer, an aluminum metal layer, a nickel metal layer and a gold metal layer which are laminated, wherein the thickness of the titanium metal layer is 20nm to 40nm, the thickness of the aluminum metal layer is 100nm to 150nm, the thickness of the nickel metal layer is 40nm to 60nm, and the thickness of the gold metal layer is 40nm to 60nm.
10. A gallium oxide thin film photodetector, produced by the production method according to any one of claims 1 to 9, comprising: the device comprises a substrate, a gallium oxide film layer, a silicon dioxide graph layer and an interdigital electrode, wherein the gallium oxide film layer is positioned on the substrate, the silicon dioxide graph layer is distributed on the gallium oxide film layer and forms ohmic contact with the gallium oxide film layer, interdigital parts of the interdigital electrode are alternately distributed on the gallium oxide film layer, and interdigital connecting parts are positioned on the silicon dioxide graph layer.
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