CN118073160A

CN118073160A - Feed-in structure of radio frequency power and semiconductor process equipment

Info

Publication number: CN118073160A
Application number: CN202211475182.9A
Authority: CN
Inventors: 李兴存
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2022-11-23
Filing date: 2022-11-23
Publication date: 2024-05-24

Abstract

The application discloses a feed-in structure of radio frequency power and semiconductor process equipment, and relates to the field of semiconductor equipment. A radio frequency power feed structure comprising: a feed-in structure body; the side wall of the feed-in structure body is provided with a first annular groove, the first annular groove comprises two groove surfaces which are arranged at intervals along the axial direction of the feed-in structure and a groove bottom which is connected with the two groove surfaces, the two groove surfaces form a capacitance structural member, and the groove bottom forms an inductance structural member; the capacitive structural member and the inductive structural member are arranged in parallel, and the parallel resonant frequency of an equivalent circuit formed by the capacitive structural member and the inductive structural member is close to or equal to the frequency of higher harmonic waves generated by interaction between plasma and a radio frequency power source. A semiconductor processing apparatus includes the above-mentioned feed-in structure. The application can solve the problems of poor etching uniformity and the like caused by standing wave effect.

Description

Feed-in structure of radio frequency power and semiconductor process equipment

Technical Field

The application belongs to the technical field of semiconductor equipment, and particularly relates to a feed-in structure of radio frequency power and semiconductor process equipment.

Background

Plasma processing apparatus are widely used in the semiconductor industry, where Capacitively Coupled Plasma (CCP) apparatus is one of the most widely used plasma generating apparatuses. The CCP source generates plasma by means of capacitive coupling discharge, and further performs etching, deposition and other processing procedures through the plasma.

The CCP equipment consists of two flat electrodes, wherein one electrode is connected with a radio frequency power source and provides voltage required by excitation to generate plasma, and the voltage is generally called a cathode; the other electrode is grounded and provides a reference potential for the cathode, commonly referred to as the anode, which forms a parallel plate capacitor. CCP sources can be divided into two types depending on the application: firstly, placing a wafer on the surface of a grounding electrode, and growing a film by using Plasma Enhanced Chemical Vapor Deposition (PECVD), wherein the area of the grounding electrode is generally equal to or similar to that of a high-voltage electrode, so as to reduce the etching effect caused by bombardment of ions in plasma on the film; and secondly, placing the wafer on the surface of a high-voltage electrode, and generating chemical and physical etching by using free radicals and ions generated by plasma and the surface material of the wafer, wherein the grounding area is generally larger than the area of the high-voltage electrode for enhancing the direct-current self-bias voltage of the surface of the wafer, and the CCP source is generally called a reactive ion etching (Reactive ion etch, RIE) plasma source.

For RIE plasma sources, to increase plasma density, a third generation architecture is successively experienced: the first generation adopts single frequency, the structure of the architecture is simple, and the problem is that the ion energy and the plasma density cannot be independently controlled; the second generation adopts a magnetic field to enhance a single-frequency capacitively coupled plasma source, utilizes the constraint of the magnetic field to enable electrons to do larmor motion around a magnetic induction line to improve electron collision frequency so as to enhance plasma density, but the introduction of the magnetic field has strict requirements on discharge conditions and has great challenges in the aspects of plasma density uniformity, discharge stability and the like; the third generation adopts a double-frequency coupling architecture, adopts low frequency to control ion energy and high frequency to control plasma density, and the architecture realizes independent control of ion energy and electron density, is a main technical route in the current RIE field, wherein the frequency of high frequency is generally more than 4-10 times of the frequency of low frequency, and common high frequency comprises 27.2MHz, 40.68MHz, 60MHz, 120MHz,160MHz and the like.

Because the plasma has nonlinear effect, the interaction between the plasma and the radio frequency power source generates secondary or higher harmonic waves, the frequency multiple of the secondary or higher harmonic waves relative to the fundamental frequency is increased, and the wavelength multiple is shortened. Since the standing wave effect is very easy to generate when the electrode size is larger than 1/10 wavelength, the plasma density in the central area of the electrode is high, the edge density is low, and the etching uniformity is poor. For example, for a power source with a frequency of 60MHz, the wavelength at the second harmonic of 120MHz is 2.5m, and standing wave effects will occur when the electrode diameter is greater than 250 mm. The diameter of the electrode is larger than 200mm or 300mm under the condition of the current etched substrate such as 8 inches or 12 inches, and the standing wave effect generated by harmonic waves can seriously affect the etching uniformity.

Disclosure of Invention

The embodiment of the application aims to provide a feed-in structure of radio frequency power and semiconductor process equipment, which can solve the problems of poor etching uniformity and the like caused by standing wave effect.

In order to solve the technical problems, the application is realized as follows:

the embodiment of the application provides a feed-in structure of radio frequency power, which is applied to semiconductor process equipment and comprises the following components: a feed-in structure body;

The side wall of the feed-in structure body is provided with a first annular groove, the first annular groove comprises two groove surfaces and a groove bottom, the groove surfaces are arranged at intervals along the axial direction of the feed-in structure, the groove bottoms are connected with the two groove surfaces, the two groove surfaces form a capacitance structural member, and the groove bottom forms an inductance structural member;

The capacitive structural member and the inductive structural member are arranged in parallel, and the parallel resonant frequency of an equivalent circuit formed by the capacitive structural member and the inductive structural member is close to or equal to the frequency of higher harmonic waves generated by interaction between plasma and a radio frequency power source.

The embodiment of the application also provides semiconductor process equipment, which comprises the following steps: the device comprises a chamber, a lower electrode assembly, an upper electrode assembly arranged above the lower electrode assembly and a feed-in structure of the radio frequency power;

One end of the feed-in structure extends into the cavity and is electrically connected with the lower electrode assembly arranged in the cavity, and the other end of the feed-in structure is used for being electrically connected with a radio frequency power supply.

In the embodiment of the application, the feed-in structure is designed to form the capacitor structural member and the inductor structural member which are connected in parallel, and the parallel resonance frequency of an equivalent circuit formed by the capacitor structural member and the inductor structural member is close to or equal to the frequency of higher harmonic waves generated by interaction between plasma and a radio frequency power source, so that the structural parameters of the feed-in structure can be obtained. Therefore, by designing the structural parameters of the feed-in structure, parallel resonance of the feed-in structure at the resonance frequency can be realized, so that the impedance of harmonic frequency can be improved, the current of electrode surface harmonic can be reduced, and the formation of standing wave effect can be further suppressed.

Drawings

Fig. 1 is a circuit diagram of a harmonic suppression device in the related art;

Fig. 2 is a schematic diagram of a feed-in structure (a), a corresponding equivalent circuit (b) and a parallel resonant frequency expression (c) according to an embodiment of the present application;

fig. 3 is a schematic structural diagram of a semiconductor processing apparatus with a feed-in structure according to an embodiment of the present application;

fig. 4 is a schematic diagram of a feed-in structure and an equivalent circuit according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a current path of a feed-in structure according to an embodiment of the present application;

fig. 6 is a schematic structural diagram of a feeding structure body according to an embodiment of the present application;

Fig. 7 is a schematic structural diagram of a dielectric spacer according to an embodiment of the present application, where (d) is a front view, (e) is a top view, and (f) is an exploded view.

Reference numerals illustrate:

100-feeding structure; 110-a feed-in structure body; 111-a first annular groove; 112-a second annular groove; 120-dielectric spacers; 121-a media ring unit;

200-chamber; 210-a grounded upper cover; 220-supporting seats;

310-high frequency power supply; 320-low frequency power supply;

400-matcher;

500-a lower electrode assembly; 510-an electrostatic chuck; 520-isolating ring; 530-a shielding ring; 540-a second focus ring;

600-upper electrode assembly; 610-upper electrode; 611-an air outlet end; 620-a first focus ring;

700-backing.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

The terms first, second and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged, as appropriate, such that embodiments of the present application may be implemented in sequences other than those illustrated or described herein, and that the objects identified by "first," "second," etc. are generally of a type, and are not limited to the number of objects, such as the first object may be one or more. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.

The following describes embodiments of the present application in detail through specific embodiments and application scenarios thereof with reference to the accompanying drawings.

Referring to fig. 1, in the related art, the impedance of the harmonic wave is improved by adding a device for suppressing the harmonic wave between the matcher and the power electrode, so that the current passing through the harmonic wave on the surface of the electrode is reduced, and finally, the purpose of suppressing the standing wave effect generated by the harmonic wave is achieved.

However, although the device for suppressing the harmonic wave can achieve the harmonic wave suppression effect, since the high-frequency current output from the matcher to the power electrode is generally higher, the power loss of the added inductance and capacitance element can reduce the power transmission efficiency of the system, and meanwhile, the probability of device failure is increased due to the heat generated by the element power loss, so that the harmonic wave suppression effect and reliability of the device can be reduced.

Based on the above-mentioned problems, the present application discloses a feeding structure of rf power, which is applied to a semiconductor process apparatus, and through which rf power can be fed to a carrier plate (i.e., an electrostatic chuck 510 described below) of the semiconductor process apparatus to achieve control of ion energy and plasma density.

Referring to fig. 2 to 7, the disclosed feeding structure 100 of radio frequency power includes a feeding structure body 110. The feeding structure body 110 is a base member, which can feed radio frequency power and provide a mounting base for other components. In some embodiments, the side wall of the feeding structure body 110 is provided with a first annular groove 111. For example, the feeding structure body 110 may be provided with one or more first annular grooves 111, which may be specific to the actual working conditions. In addition, the first annular groove 111 may be an annular groove, and an axis of the annular groove is collinear with an axis of the feed structure 100.

Considering that the feeding structure body 110 is capable of transmitting rf power, that is, has conductivity, when the first annular groove 111 is formed on the side wall of the feeding structure body 110, two groove surfaces are formed at intervals along the axial direction of the feeding structure 100 and a groove bottom connecting the two groove surfaces is formed. Based on this, when the rf power is transmitted through the feeding structure body 110, no current can pass between the two slot surfaces, so as to form a capacitive structural member, and the two slot surfaces are two polar plates of the capacitive structural member; meanwhile, when current passes through the groove bottoms of the two groove surfaces, inductance can be generated, so that an inductance structural member can be formed through the groove bottoms, and the capacitance structural member and the inductance structural member are arranged in parallel to form an equivalent circuit.

Illustratively, the feeding structure body 110 may be manufactured by an integral processing manner, and in addition, the longitudinal section of the first annular groove 111 may be rectangular, but of course, may be other shapes, which are not limited in particular in the embodiment of the present application.

In the embodiment of the present application, the current may be transmitted along the surface of the feeding structure body 110, and by providing the feeding structure body 110 with the first annular groove 111, a capacitive structure member and an inductive structure member connected in parallel with each other may be formed on the path of the radio frequency power transmission, as shown in fig. 2 (a), and an equivalent circuit formed by the capacitive structure member and the inductive structure member is shown in fig. 2 (b), and the parallel resonant frequency of the equivalent circuit is shown in fig. 2 (c).

According to the maximum principle of impedance at the parallel resonant frequency, when the structural size of the feeding structure 100 of the rf power is adjusted, the capacitance of the capacitive structure and the inductance of the inductive structure can be changed, so as to adjust the parallel resonant frequency of the equivalent circuit and maximize the impedance at the parallel resonant frequency.

From the above, it is apparent that when the parallel resonant frequency of the equivalent circuit formed by the capacitive structural member and the inductive structural member is close to or equal to the frequency of the high-frequency harmonic (such as the second harmonic, the third harmonic, etc.) generated by the interaction between the plasma and the radio-frequency power, the impedance can be maximized, so that the suppression effect on the harmonic current can be realized. Here, it should be noted that the frequency of the parallel resonant frequency approaching the high-frequency harmonic may be understood to be within the preset error range, and for example, the difference ratio between the parallel resonant frequency and the frequency of the high-frequency harmonic may be no greater than 10%, for example, (. F-f0|)/f0×100+.ltoreq.10%, where f is the parallel resonant frequency of the equivalent circuit, and f0 is the frequency of the high-frequency harmonic.

For example, if the fundamental frequency is f1=60 MHz, the second harmonic frequency f2=120 MHz and the third harmonic frequency is f3=180 MHz, so that by changing the structural size of the feeding structure 100, the impedance of the capacitive structural members connected in parallel with each other is similar to or equal to the impedance of the inductive structural members, and the frequency of the parallel resonant frequency close to or equal to the higher harmonic is satisfied, at this time, the impedance of the parallel connection is approaching infinity, so that the harmonic current cannot reach the surface of the wafer.

Specifically, the impedance when the capacitive structure is connected in parallel with the inductive structure is z=x _L*X_C/(X_L+X_C), where X _L＝ωL,X_C = -1/(ωc), when X _L is equal to X _C, Z approaches infinity.

Here, since the inductance expression is X _L =2pi f×l and the capacitance expression is X _C =1/(2pi f×c), the equality of the inductance and the capacitance means equality at a specific frequency, for example, equality of the inductance and the capacitance at 60MHz, but inequality of the inductance and the capacitance at 120MHz frequency, and therefore, in order to suppress the harmonic of 120MHz, X _L＝-X_C is required at 120MHz frequency. In the embodiment of the application, the parallel resonant frequency is f, the capacitance of the capacitive structural member is C, the inductance of the inductive structural member is L, wherein,

C＝(ε₀ε₁*s)/d

The meaning of each parameter is as follows: mu ₀ is vacuum permeability, l is the length of the inductive structure, r is the radius of the inductive wire of the inductive structure, ε ₀ is the vacuum permittivity of the capacitive structure, ε ₁ is the relative permittivity of the medium in the capacitive structure (i.e., the relative permittivity after insertion of the dielectric spacer 120), s is the surface area of the plates of the capacitive structure, and d is the distance between the plates of the capacitive structure, i.e., the distance between the two slot faces.

Based on the formula, the capacitance C of the capacitance structural member and the inductance L of the inductance structural member can be calculated, and then the parallel resonance frequency f of the equivalent circuit is calculated.

Wherein μ ₀ is a vacuum permeability, which is a constant with dimensions, and typically μ ₀ =4pi×10newton/amp ²; l is the length of the inductance structure, which can be obtained according to the structural dimensions of the feeding structure body 110, and the specific calculation method will be described in detail in the following; r is the radius of an inductance line of the inductance structural component; epsilon ₀ is the vacuum dielectric constant of the capacitive structure, which is a constant, and in general, epsilon ₀＝8.854187817×10F/m;ε₁ is the relative dielectric constant of the medium in the capacitive structure, which can be obtained according to GB/T1409-2006; s is the surface area of the plate of the capacitive structure, which can be obtained according to the structural dimensions of the feed-in structural body 110, and the specific calculation is described in detail below; d is the distance between the plates of the capacitive structure. Here, when the dielectric spacer 120 is provided in the first annular groove 111, the distance between the substrates of the first annular groove 111 corresponds to the thickness dimension of the dielectric spacer 120.

In some embodiments, the groove bottom may be provided with a plurality of second annular grooves 112, and the plurality of second annular grooves 112 are arranged at intervals along the axial direction of the feed structure 100. Based on this, by providing a plurality of second annular grooves 112, the performance of the inductance structural member can be improved. It should be noted that, by changing the number of the second annular grooves 112, the length and inductance of the inductance structural member can be adjusted to meet the actual working condition requirement. Illustratively, the longitudinal cross-section of the second annular groove 112 may be rectangular, although other shapes are possible and are not specifically limited herein. In addition, a plurality of second annular grooves 112 may be coaxially disposed.

Further, the calculation formula of the length l of the inductance structural component is as follows:

Wherein N ₁ is the number of second annular grooves 112, specifically, the number of second annular grooves 112 can be set according to the actual working condition, and the length of the inductance structural member can be increased by increasing the number of second annular grooves 112; b is the maximum outer diameter of the inductance structural member, c is the minimum inner diameter of the inductance structural member, wherein b and c can be obtained according to the specific structural dimensions of the feeding structural body 110, and d is the distance between the electrode plates of the capacitance structural member. It should be noted here that the groove-shaped portion of the second annular groove 112 has a smaller dimension than the value c within the individual module, so that Φc is taken for the sake of easy calculation of the diameter of the inductive component at this time, where r=c/2.

The calculation formula of the surface area of the polar plate of the capacitance structural member is as follows:

Where a is the diameter of the feeding structure body 110, b is the maximum outer diameter of the inductance structural member (if there is a gap between the dielectric spacer 120 and the inductance structural member, b should be the inner diameter of the dielectric spacer 120), and specifically, a and b may be obtained according to the structural dimensions of the feeding structure 100.

Based on the above parameters, the parallel resonant frequency f of the parallel circuit can be finally obtained as follows:

According to the maximum principle of impedance of the parallel resonance frequency position, when the parallel resonance frequency of a parallel circuit formed by connecting the inductance structural member and the capacitance structural member in parallel is close to or reaches higher harmonic frequency, the maximum impedance of the harmonic frequency can be reached, so that the suppression effect on harmonic current is realized.

Therefore, the parallel resonant frequency f can be equal to the higher harmonic frequency, so as to obtain the structural dimension parameter of the feeding structure body 110 under the corresponding higher harmonic frequency.

For example, when the frequency of the radio frequency power source is 60MHz, the second harmonic frequency is 120MHz, and at this time, the structural parameter corresponding to the parallel resonant frequency f should satisfy the 120MHz frequency point. In some embodiments, the lowest inner diameter c of the inductance structural member is not less than 10mm, the diameter a of the feeding structure body 110 is not more than 100mm, the height h2 of the second annular groove 112 is not less than 0.1mm, and besides, the dielectric spacer 120 may be made of a dielectric material such as ceramic, quartz, or the like, and may be air, or the like, so long as the dielectric spacer 120 is non-conductive, the thickness d of the dielectric spacer 120 is not less than 0.5mm, and the number N1 of slots of the second annular groove 112 is designed to satisfy the length l of the inductance structural member.

Based on the above parameters, the structural parameters of the feed structure 100 corresponding to the second harmonic frequency of 120MHz can be obtained, as shown in table 1.

Table 1 structural parameters of feed-in structure 100 satisfying 120MHz parallel resonance frequency

Similarly, the third harmonic frequency is 180MHz, and the structural parameters of the feed structure 100 corresponding to the third harmonic frequency of 180MHz can be obtained in the same manner as described above. Other higher orders are also possible, and not specifically mentioned in the embodiments of the present application, the specific principles may be referred to in the above description of the second harmonic frequency.

Considering that the first annular groove 111 is in a vacant state, air can be contained in the first annular groove 111, and the two groove surfaces of the first annular groove 111 can also form an electrode structural member due to the fact that the air also has a certain insulating effect.

In order to further improve the performance of the capacitive structure, the feed-in structure 100 may further include a dielectric spacer 120, where the dielectric spacer 120 is disposed in the first annular groove 111 to serve to isolate two groove surfaces, so that the performance of the capacitive structure may be improved.

Illustratively, the shape of the media separator 120 may be adapted to the shape of the first annular groove 111 in order to enable the media separator 120 to be embedded in the first annular groove 111. In addition, the medium separator 120 may be detachably installed in the first annular groove 111, so as to design the size of the first annular groove 111 according to actual conditions, and ensure that the medium separator 120 can be adapted to the size of the first annular groove 111.

In some embodiments, the medium spacer 120 may include a plurality of medium ring units 121 respectively embedded in the first annular groove 111, and the plurality of medium ring units 121 are spliced end to form the annular medium spacer 120. With this design, the mounting of the media separator 120 to the first annular groove 111 can be facilitated.

As shown in fig. 7, the first annular groove 111 is an annular groove, and the medium spacer 120 may include a first semicircular medium ring unit 121 and a second semicircular medium ring unit 121, and when the medium spacer is installed, only the first semicircular medium ring unit 121 and the second semicircular medium ring unit 121 need to be respectively fastened in the first annular groove 111 from both sides to achieve the installation.

In some embodiments, the feeding structure body 110 may be made of a metal conductive material so as to transmit rf power, and the metal conductive material may include copper, aluminum, etc., and may include other conductive materials, which is not limited in the embodiments of the present application.

In addition, the dielectric spacer 120 may be made of an insulating material, which may include ceramic, quartz, etc., for example, but may be made of other materials, which is not particularly limited in the embodiment of the present application.

In view of the fact that higher harmonics may be second harmonics, third harmonics, etc., and may also include higher harmonics, the feed structure 100 may be adaptively designed for different harmonics so as to suppress different harmonic currents. Based on this, in the embodiment of the present application, the side wall of the feeding structure body 110 may be provided with a plurality of first annular grooves 111, and the plurality of first annular grooves 111 are arranged at intervals along the axial direction of the feeding structure 100.

In addition, the feed structure 100 may also include a plurality of dielectric spacers 120, where the plurality of dielectric spacers 120 are disposed in the plurality of first annular grooves 111 in a one-to-one correspondence. Based on the method, various numbers of different subharmonics can be suppressed, so that the purpose of suppressing the standing wave effect is achieved.

In some embodiments, the parallel resonant frequencies of the equivalent circuit formed by the capacitive structural member and the inductive structural member, which are respectively connected in parallel with each other, of the plurality of first annular grooves 111 correspond to different harmonic frequencies.

Specifically, the capacitances of the capacitive structures formed by the respective plurality of first annular grooves 111 may be different so as to change the parallel resonant frequency, thereby enabling the parallel resonant frequency to correspond to different harmonic frequencies. Similarly, the inductances of the inductance structural members formed at the groove surfaces of the plurality of first annular grooves 111 near the axis of the feed-in structure 100 may also be different, and at this time, the parallel resonance frequency may be changed so as to correspond to different harmonic frequencies.

Referring to fig. 4 and 6, in a more specific embodiment, the side wall of the feeding structure body 110 is provided with two first annular grooves 111 spaced along the axial direction of the feeding structure 100, and the parallel resonant frequency of the equivalent circuit (i.e. formed by the upstream capacitive structure and the upstream inductive structure) at the upstream first annular groove 111 is close to or equal to the frequency of the second harmonic along the transmission direction of the radio frequency power; whereas the parallel resonant frequency of the equivalent circuit at the downstream first annular groove 111 (i.e. formed by the downstream capacitive and inductive structures) is close to or equal to the frequency of the third harmonic. By the arrangement mode, the second harmonic can be restrained through the upstream capacitive structural member and the upstream inductive structural member, so that the current of the second harmonic is reduced, and the purpose of restraining the second harmonic to generate a standing wave effect can be achieved; meanwhile, the third harmonic is restrained through the downstream capacitance structural member and the downstream inductance structure, so that the current of the third harmonic is reduced, and the purpose of restraining the standing wave effect generated by the third harmonic can be achieved. Therefore, through the functions of the two groups of capacitance structural members and inductance structural members which are respectively arranged in parallel, the second harmonic and the third harmonic can be respectively restrained, and the purpose of restraining the standing wave effect generated by the second harmonic and the third harmonic can be simultaneously achieved.

In other embodiments, the parallel resonant frequency of the equivalent circuit at the upstream first annular groove 111 (i.e., formed by the upstream capacitive and inductive structural members) is close to or equal to the frequency of the third harmonic along the transmission direction of the radio frequency power; whereas the parallel resonance frequency of the equivalent circuit (formed by the capacitive and inductive structures) at the downstream first annular groove 111 is close to or equal to the frequency of the second harmonic. By the arrangement mode, the third harmonic can be restrained through the upstream capacitive structural member and the upstream inductive structural member, so that the current of the third harmonic is reduced, and the purpose of restraining the standing wave effect generated by the third harmonic can be achieved; meanwhile, the second harmonic is restrained through the downstream capacitance structural member and the downstream inductance structure, so that the current of the second harmonic is reduced, and the purpose of restraining the second harmonic from generating a standing wave effect can be achieved. Therefore, through the functions of the two groups of capacitance structural members and inductance structural members which are respectively arranged in parallel, the second harmonic and the third harmonic can be respectively restrained, and the purpose of restraining the standing wave effect generated by the second harmonic and the third harmonic can be simultaneously achieved.

Further, when the dielectric spacers 120 are disposed in the two first annular grooves 111, the dielectric constant of the dielectric spacers 120 can be changed by changing the material of the dielectric spacers, so as to provide a variable parameter for the design of the capacitor C of the feed-in structure, and make the design more flexible.

Referring to fig. 3 to 7, based on the above-mentioned feeding structure 100 of radio frequency power, the embodiment of the application further discloses a semiconductor process device, which includes: the plasma display panel comprises a chamber 200, a lower electrode assembly 500, an upper electrode assembly 600 arranged above the lower electrode assembly 500, and a feeding structure 100 of the radio frequency power; one end of the feeding structure 100 extends into the chamber 200 and is electrically connected to the bottom electrode assembly 500 disposed in the chamber 200, and the other end of the feeding structure 100 is electrically connected to a radio frequency power source.

In addition to the above-described structure, the semiconductor process apparatus may further include a high frequency power source 310, a low frequency power source 320, a matcher 400, etc., wherein the chamber 200 is grounded, the high frequency power source 310 and the low frequency power source 320 are electrically connected to the matcher 400, one end of the feed-in structure 100 is electrically connected to the matcher 400, and the other end of the feed-in structure 100 extends into the chamber 200 and is electrically connected to a lower electrode assembly 500 disposed in the chamber 200; the gas outlet end 611 of the upper electrode assembly 600 is disposed within the chamber 200 opposite to the lower electrode assembly 500 for delivering the process gas into the chamber 200.

Illustratively, the chamber 200 may provide a reactive environment for the process; the frequency of the high frequency power supply 310 may be 27.12MHz-200MHz, the frequency of the low frequency power supply 320 may be 0.4MHz-13.56MHz, and the high frequency power supply 310 and the low frequency power supply 320 are respectively used to control the plasma density and ion energy; in addition, the matcher 400 may be a dual-frequency matcher.

The power of each of the high frequency power source 310 and the low frequency power source 320 can be transferred to the feeding structure 100 of the rf power via the dual frequency matcher, and since the feeding structure 100 has conductivity, it can transfer power to the lower electrode assembly 500 and break down the process gas between the lower electrode assembly 500 and the gas outlet end 611 to generate plasma, in this process, the upper electrode assembly 600 can spray the process gas into the chamber 200 through the gas outlet end 611 to break down the process gas to generate plasma.

Referring to fig. 3, in some embodiments, the upper electrode assembly 600 may include an upper electrode 610 and a first focus ring 620, the gas outlet end 611 of the upper electrode 610 is disposed opposite the lower electrode assembly 500, and the first focus ring 620 is disposed around the gas outlet end 611.

Further, the chamber 200 may include a ground cap 210, the gas outlet end 611 of the upper electrode 610 is disposed on an inner side surface of the ground cap 210, the first focus ring 620 is also disposed on an inner side surface of the ground cap 210, and the first focus ring 620 is disposed around the gas outlet end 611. With this arrangement, the impedance of the edge of the upper electrode 610 can be increased by the first focus ring 620, thereby serving to confine the plasma distribution at the edge of the gas outlet 611.

The first focusing ring 620 may be made of quartz dielectric material, or may be made of other dielectric materials, so long as the impedance of the edge of the upper electrode 610 is improved.

With continued reference to fig. 3, in some embodiments, the lower electrode assembly 500 may include an electrostatic chuck 510, a spacer ring 520, a shielding ring 530, and a second focusing ring 540, wherein the bottom of the chamber 200 is provided with a support base 220, the spacer ring 520 is disposed on the support base 220, the electrostatic chuck 510 is disposed on the spacer ring 520, one end of the feed-in structure 100 extending into the chamber 200 is connected to the bottom of the electrostatic chuck 510, and the second focusing ring 540 is disposed at least partially around the outside of the spacer ring 520; the side of the chamber 200 is provided with a bottom liner 700, the shielding ring 530 is disposed around the outside of the isolation ring 520 and connected to the bottom liner 700, and the shielding ring 530 is grounded through the bottom liner 700 and the chamber 200 in sequence.

With the above arrangement, the electrostatic chuck 510 may be electrically isolated from the shielding ring 530 by the isolating ring 520, and the isolating ring 520 may be made of a dielectric material such as quartz, ceramic, or other dielectric materials; the substrate 700 is formed of a slit structure with a relatively high aspect ratio, and the substrate 700 may be made of a conductive material, and mainly serves to confine plasma and suppress particles. The second focus ring 540 may be fabricated from a quartz material to achieve wafer edge plasma distribution and composition tuning functions.

In summary, the embodiment of the present application realizes that the feed-in structure 100 generates parallel resonance at the fundamental frequency resonance frequency based on the self-resonance characteristic formed by the capacitance and the inductance of the feed-in structure 100 through the structural parameters of the feed-in structure 100 and the arrangement of the dielectric spacer 120, thereby improving the impedance of the harmonic frequency and effectively inhibiting the travel of the harmonic standing wave effect; in addition, the embodiment of the application can realize the suppression function of secondary, tertiary and other higher harmonics by designing the feed-in structure 100 under the condition of not adding capacitance and inductance components, and has the characteristics of high feed-in efficiency, good stability and the like.

The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.

Claims

1. A feeding structure of radio frequency power applied to semiconductor process equipment, characterized in that the feeding structure (100) comprises: a feed-in structure body (110);

The side wall of the feed-in structure body (110) is provided with a first annular groove (111), the first annular groove (111) comprises two groove surfaces which are arranged at intervals along the axial direction of the feed-in structure (100) and a groove bottom which is connected with the two groove surfaces, the two groove surfaces form a capacitance structural member, and the groove bottom forms an inductance structural member;

2. The feed-in structure according to claim 1, wherein the parallel resonant frequency is f, the capacitance of the capacitive structure is C, and the inductance of the inductive structure is L; wherein,

C＝(ε₀ε₁*s)/d

Mu ₀ is vacuum magnetic permeability, l is the length of an inductance structural member, r is the radius of an inductance line of the inductance structural member, epsilon ₀ is the vacuum dielectric constant of the capacitance structural member, epsilon ₁ is the relative dielectric constant of the capacitance structural member after a medium is inserted into the capacitance structural member, s is the surface area of a polar plate of the capacitance structural member, and d is the distance between polar plates of the capacitance structural member.

3. The feed-in structure according to claim 2, characterized in that the groove bottom is provided with a plurality of second annular grooves (112), the plurality of second annular grooves (112) being arranged at intervals along the axial direction of the feed-in structure (100).

4. A feed-in structure according to claim 3, wherein the length of the inductance structural component is calculated by the formula:

Wherein N ₁ is the number of the second annular grooves (112), b is the maximum outer diameter of the inductance structural member, c is the minimum inner diameter of the inductance structural member, and d is the distance between the pole plates of the capacitance structural member.

5. A feed-in structure according to claim 3, wherein the surface area of the plates of the capacitive structure is calculated as:

wherein a is the diameter of the feed-in structure body (110), and b is the maximum outer diameter of the inductance structural member.

6. The feed structure according to claim 1, characterized in that the feed structure (100) further comprises a dielectric spacer (120);

the media separator (120) is disposed within the first annular groove (111).

7. The feed structure according to claim 6, wherein the dielectric spacer (120) comprises a plurality of dielectric ring units (121) respectively embedded in the first annular groove (111), and the plurality of dielectric ring units (121) are spliced end to form the annular dielectric spacer (120).

8. The feed-in structure according to any one of claims 1 to 7, characterized in that a side wall of the feed-in structure body (110) is provided with a plurality of the first annular grooves (111), and the plurality of the first annular grooves (111) are arranged at intervals along an axial direction of the feed-in structure (100).

9. The feed-in structure according to claim 8, wherein parallel resonance frequencies of equivalent circuits formed by the capacitive structural member and the inductive structural member, which are respectively connected in parallel with each other, of the plurality of first annular grooves (111) correspond to different harmonic frequencies, respectively.

10. The feed-in structure according to claim 9, characterized in that the side wall of the feed-in structure body (110) is provided with two first annular grooves (111) spaced apart along the axial direction of the feed-in structure (100);

Along the transmission direction of radio frequency power, the parallel resonance frequency of an equivalent circuit positioned at the upstream first annular groove (111) is equal to the frequency of a second harmonic or the frequency of a third harmonic, and the parallel resonance frequency of the downstream first annular groove (111) is equal to the frequency of the third harmonic or the frequency of the second harmonic.

11. A semiconductor processing apparatus, comprising: a chamber (200), a lower electrode assembly (500), an upper electrode assembly (600) disposed above the lower electrode assembly (500), and a feeding structure (100) of radio frequency power according to any one of claims 1 to 9;

One end of the feed-in structure (100) extends into the chamber (200) and is electrically connected with the lower electrode assembly (500) arranged in the chamber (200), and the other end of the feed-in structure (100) is used for being electrically connected with a radio frequency power supply.

12. The semiconductor processing apparatus of claim 11, wherein the upper electrode assembly (600) comprises an upper electrode (610) and a first focus ring (620), an outlet end (611) of the upper electrode (610) being disposed opposite the lower electrode assembly (500), the first focus ring (620) being disposed around the outlet end (611).

13. The semiconductor processing apparatus of claim 11, wherein the lower electrode assembly (500) comprises an electrostatic chuck (510), a spacer ring (520), a shield ring (530), and a second focus ring (540);

The bottom of the cavity (200) is provided with a supporting seat (220), the isolation ring (520) is arranged on the supporting seat (220), the electrostatic chuck (510) is arranged on the isolation ring (520), one end, extending into the cavity (200), of the feed-in structure (100) is connected to the bottom of the electrostatic chuck (510), and the second focusing ring (540) is at least partially arranged on the outer side of the isolation ring (520) in a surrounding mode;

The side of cavity (200) is equipped with substrate (700), shielding ring (530) encircle set up in the outside of isolating ring (520), and with substrate (700) are connected, just shielding ring (530) pass through in proper order substrate (700) with cavity (200) ground connection.