CN118053892A

CN118053892A - Micro display chip, micro display panel, forming method of micro display panel and near-eye display device

Info

Publication number: CN118053892A
Application number: CN202410195625.1A
Authority: CN
Inventors: 宋皇剑
Original assignee: Shanghai Xianyao Display Technology Co ltd
Current assignee: Shanghai Xianyao Display Technology Co ltd
Priority date: 2024-02-21
Filing date: 2024-02-21
Publication date: 2024-05-17

Abstract

A micro display chip, a micro display panel, a forming method thereof and near-to-eye display equipment relate to the technical field of micro display, wherein the forming method of the micro display panel comprises the following steps: providing a micro-display chip, wherein the micro-display chip comprises a light-emitting area and a non-light-emitting area surrounding the light-emitting area; forming a metal layer in the non-light-emitting region; forming a light absorption layer on the metal layer, wherein the surface of the light absorption layer is provided with a plurality of coarsening convex parts; and surrounding and packaging the micro-display chip by adopting an outer frame, wherein the outer frame exposes a light-emitting area and a light-absorbing layer of the micro-display chip. The light absorption layer is formed on the metal layer, the surface of the light absorption layer is provided with the uneven surface with a plurality of coarsening convex parts, the surface area of the uneven surface of the light absorption layer is increased, and light rays emitted from the light emitting area reach the surface of the light absorption layer through external reflection to generate diffuse reflection, so that the re-reflection of full-band light rays can be effectively reduced, and the picture display quality is improved.

Description

Micro display chip, micro display panel, forming method of micro display panel and near-eye display device

Technical Field

The present invention relates to the field of microdisplay technology, and in particular, to a microdisplay chip, a microdisplay panel, a method for forming the microdisplay panel, and a near-to-eye display device.

Background

Inorganic Micro-pixel light emitting diodes, also known as Micro light emitting diodes (Micro LEDs or μ -LEDs), have become increasingly important since they are used in a variety of applications, including self-emissive microdisplays, visible light communication, optogenetics, and the like. Micro LEDs have better strain relaxation, better light extraction efficiency, uniform current spreading, and higher output performance than conventional LEDs. Micro LEDs also have the advantages of improved thermal effect, faster response speed, larger operating temperature range, higher resolution, wider color gamut, higher contrast ratio, lower power consumption, higher current density, and the like.

However, the Micro LED Micro display panel in the prior art still has a plurality of problems in the application process.

Disclosure of Invention

The invention solves the technical problem of providing a micro display chip, a micro display panel, a forming method thereof and near-to-eye display equipment so as to improve the picture display quality.

In order to solve the above problems, the technical solution of the present invention provides a micro display chip, including: a light emitting region; a non-light emitting region located around the light emitting region; a metal layer located in the non-light emitting region; the light absorption layer is positioned on the metal layer, and the surface of the light absorption layer is provided with a plurality of coarsening convex parts.

Optionally, the shapes of the plurality of coarsening convex parts are different.

Optionally, the shapes of the plurality of coarsening convex parts are the same.

Optionally, the method further comprises: drive backplate: the light emitting array is arranged on the driving backboard and is positioned in the light emitting area.

Optionally, the metal layer is electrically connected to the light emitting array, and the metal layer serves as an electrode electrically connected to the light emitting array.

Optionally, the method further comprises: and a top conductive layer on top of the light emitting array, the top conductive layer electrically connected to the top of the light emitting array, and the top conductive layer electrically connected to the metal layer.

Optionally, the light emitting array includes: the light-emitting table tops are electrically connected with the driving backboard, and the driving backboard is used for controlling the light-emitting table tops to be turned on and turned off.

Optionally, the method further comprises: and the current expansion structure is arranged between the adjacent light emitting table tops and is electrically connected with the top conducting layer.

Optionally, the method further comprises: the number of the microlenses is the same as that of the light-emitting table tops, and one microlens is arranged on one side, away from the driving backboard, of each light-emitting table top.

Optionally, the light absorbing layer is disposed in the gaps between adjacent microlenses, and the surface of the light absorbing layer in the gaps between adjacent microlenses has a plurality of coarsening convex portions.

Optionally, positions of the plurality of coarsening convex parts between adjacent microlenses correspond to positions of the current spreading structure.

Optionally, the material of the light absorbing layer includes: photoresist, ash glue, inorganic anti-reflection material or black inorganic material.

Optionally, the coarsening convex part is in a conical structure; wherein the width of the bottom of the coarsening convex part is 50-200 nanometers, and the height of the coarsening convex part is 50-300 nanometers.

Optionally, the metal layer and the light-absorbing layer with the roughened protrusions on the surface are disposed around the light-emitting region.

Correspondingly, the technical scheme of the invention also provides a micro display panel, which comprises the following components: the micro display chip according to any one of the above-mentioned aspects; and the outer frame surrounds and encapsulates the micro display chip, and the light emitting area and the light absorbing layer of the micro display chip are exposed by the outer frame.

Optionally, the top of the outer frame is higher than the light absorbing layer.

Optionally, the top of the outer frame is level with the light absorbing layer.

Optionally, the top of the outer frame is lower than the light absorbing layer.

Optionally, the method further comprises: the connecting wire comprises a first connecting end and a second connecting end which are opposite to each other, and the first connecting end of the connecting wire is electrically connected with the micro display chip; the second connecting end of the connecting wire is electrically connected with the connector, and the connector is connected with equipment matched with the outside.

Correspondingly, the technical scheme of the invention also provides a method for forming the micro display panel, which comprises the following steps: providing a micro display chip comprising a light emitting region, and a non-light emitting region surrounding the light emitting region; forming a metal layer in the non-light-emitting region; forming a light absorption layer on the metal layer, wherein the surface of the light absorption layer is provided with a plurality of coarsening convex parts; and surrounding and packaging the micro-display chip by adopting an outer frame, wherein the outer frame exposes the light-emitting area and the light-absorbing layer of the micro-display chip.

Optionally, the method for forming the light absorbing layer on the metal layer includes: forming a light absorption material layer on the metal layer by adopting at least one-time coating and exposure developing treatment; roughening the surface of the light absorbing material layer to form the light absorbing layer so that the surface of the light absorbing layer is provided with a plurality of roughening convex parts; the method for coating, exposing and developing comprises the following steps: forming a light absorbing material film on the metal layer and the light emitting region; and exposing and developing the light-absorbing material film based on a mask plate to remove the light-absorbing material film formed on the light-emitting area.

Optionally, the roughening treatment method for the surface of the light absorbing material layer includes: and carrying out roughening treatment on the surface of the light absorbing material layer by adopting an ion etching process so that the surface of the light absorbing layer is provided with a plurality of roughening convex parts, and the shapes of the roughening convex parts are different.

Optionally, the etching gas in the ion etching process includes: one or more of O ₂、CF₄ and CL ₂.

Optionally, the roughening treatment method for the surface of the light absorbing material layer includes: and carrying out coarsening treatment on the surface of the light absorbing material layer by adopting a mould imprinting process so that the surface of the light absorbing layer is provided with a plurality of coarsening convex parts, and the shapes of the coarsening convex parts are the same.

Optionally, after forming the light absorbing layer and before using the outer frame package, the method further includes: and baking the light absorption layer.

Optionally, the baking temperature of the baking treatment is 120-150 ℃ and the baking time is 50-100 minutes.

Correspondingly, the technical scheme of the invention also provides near-eye display equipment, which comprises the following components: the micro display chip according to any one of the above embodiments.

Compared with the prior art, the technical scheme of the invention has the following advantages:

In the micro display chip of the technical scheme of the invention, the light absorption layer positioned on the metal layer is provided with the uneven surface with a plurality of coarsened convex parts, so that the surface area of the uneven surface of the light absorption layer is increased, and the light emitted by the light emitting area is reflected by the outside to reach the surface of the light absorption layer to generate diffuse reflection, thereby effectively reducing the re-reflection of the light in all wave bands and improving the picture display quality.

Further, the plurality of coarsening convex parts have different shapes, namely, the plurality of coarsening convex parts are irregularly sized. The coarsening convex parts with irregular sizes can effectively enhance the diffuse reflection effect, further reduce the re-reflection of full-band light rays and improve the picture display quality.

In the micro display panel of the technical scheme of the invention, the light absorption layer positioned on the metal layer is provided with the uneven surface with a plurality of coarsened convex parts, so that the surface area of the uneven surface of the light absorption layer is increased, and the light emitted by the light emitting area is reflected by the outside to reach the surface of the light absorption layer to generate diffuse reflection, thereby effectively reducing the re-reflection of the light in all wave bands and improving the picture display quality.

According to the method for forming the micro display panel, the light absorption layer is formed on the metal layer, the surface of the light absorption layer is provided with the uneven surface with the roughened convex parts, the surface area of the uneven surface of the light absorption layer is increased, and the light emitted from the light emitting area is reflected by the outside to reach the surface of the light absorption layer and then is diffusely reflected, so that the re-reflection of the light in all wave bands can be effectively reduced, and the picture display quality is improved.

Further, the method for roughening the surface of the light absorbing material layer includes: and roughening the surface of the light absorbing material layer by adopting an ion etching process so that the surface of the light absorbing layer is provided with a plurality of roughened convex parts, and the shapes of the plurality of roughened convex parts are different. Because the ion etching process can not generate external force on the micro display chip, the micro display chip can not be broken or scratched in the roughening process, and the ion etching process does not need to be finely aligned with the light absorption layer, so that the process difficulty of roughening treatment is effectively reduced. In addition, the shapes of a plurality of coarsened convex parts formed by coarsening treatment of an ion etching process are different, namely, a plurality of coarsened convex parts are of irregular sizes, so that the diffuse reflection effect can be effectively enhanced, the re-reflection of full-band light rays is further reduced, and the picture display quality is improved.

Drawings

FIG. 1 is a schematic diagram of a Micro LED Micro display panel;

FIG. 2 is a diagram of the light propagation path of the Micro LED Micro display panel of the embodiment of FIG. 1 applied to AR glasses;

Fig. 3 to 8 are schematic views illustrating the steps of a method for forming a micro display panel according to an embodiment of the invention;

FIG. 9 is a schematic diagram showing a roughening process in a method for forming a micro-display panel according to another embodiment of the present invention;

FIG. 10 is a schematic diagram of a micro-lens and a light absorbing layer in a micro-display panel according to an embodiment of the invention;

FIG. 11 is a schematic diagram showing the structure of a micro lens and a light absorbing layer in a micro display panel according to another embodiment of the invention;

FIG. 12 is a schematic cross-sectional view of an embodiment of the micro-display panel of the embodiment of FIG. 8 along the line A-A;

FIG. 13 is a schematic cross-sectional view of another embodiment of the microdisplay panel of the embodiment of FIG. 8 along line A-A;

FIG. 14 is a schematic cross-sectional view of yet another embodiment of the microdisplay panel of FIG. 8 along line A-A;

FIG. 15 is a schematic cross-sectional view of yet another embodiment of the microdisplay panel of FIG. 8 along line A-A;

FIG. 16 is a schematic cross-sectional view of yet another embodiment of the microdisplay panel of FIG. 8 along line A-A.

Detailed Description

As described in the background art, the Micro LED Micro display panel in the prior art still has a plurality of problems in the application process. The following will make a detailed description with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of a Micro LED Micro display panel; fig. 2 is a diagram showing a light propagation path of the Micro LED Micro display panel of the embodiment shown in fig. 1 applied to AR glasses.

Referring to fig. 1, a Micro LED Micro display panel 100P includes: the micro display chip 10P, the outer frame 20P, the connecting wire 30P and the connector 40P, wherein the outer frame 20P surrounds the micro display chip 10P, one end of the connecting wire 30P is connected with the micro display chip 10P, the other end of the connecting wire 30P is connected with the connector 40P, and the connector 40P is suitable for being connected with equipment matched with the outside. The micro display chip 10P has a light emitting region I and a non-light emitting region II surrounding the light emitting region I, the non-light emitting region II having a metal layer 11P.

Referring to fig. 2, light emitted from the micro LED micro display panel 100P passes through the optical lens 200P and reaches the optical waveguide lens 300P, and can be displayed in the development area of the optical waveguide lens 300P.

With continued reference to fig. 2, in the conventional AR glasses, when the light emitted by the Micro LED Micro display panel 100P reaches the optical waveguide lens 300P, some light is reflected back to the non-light-emitting area II on the Micro LED Micro display panel 100P, reflected by the metal layer of the non-light-emitting area II, enters the optical waveguide lens 300P again, and is imaged twice at different positions of the optical waveguide lens 300P, and the image formed after being reflected by the non-light-emitting area II is also called "ghosting", so that the quality of the display image is significantly reduced.

On the basis, the invention provides a micro display chip, a micro display panel, a forming method thereof and near-to-eye display equipment, wherein a light absorption layer is formed on a metal layer, the surface of the light absorption layer is provided with a non-flat surface with a plurality of coarsening convex parts, the surface area of the surface of the non-flat light absorption layer is increased, and diffuse reflection is generated after light rays emitted by a light emitting area reach the surface of the light absorption layer through external reflection, so that the re-reflection of full-band light rays can be effectively reduced, and the picture display quality is improved.

In order that the above objects, features and advantages of the present invention will be readily apparent, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings, in which, as illustrated in the appended drawings, it is to be understood that the embodiments described are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "top surface", "bottom surface", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the indicated positions or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limitations of the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish one entity or operation from another entity or operation, and do not require or imply any actual relationship, order or relative importance between such entities or operations.

Fig. 3 to 8 are schematic views illustrating the steps of a method for forming a micro display panel according to an embodiment of the invention; FIG. 10 is a schematic diagram of a micro-lens and a light absorbing layer in a micro-display panel according to an embodiment of the invention;

FIG. 11 is a schematic diagram showing the structure of a micro lens and a light absorbing layer in a micro display panel according to another embodiment of the invention; FIG. 12 is a schematic cross-sectional view of an embodiment of the micro-display panel of the embodiment of FIG. 8 along the line A-A; FIG. 13 is a schematic cross-sectional view of another embodiment of the microdisplay panel of the embodiment of FIG. 8 along line A-A; FIG. 14 is a schematic cross-sectional view of yet another embodiment of the microdisplay panel of FIG. 8 along line A-A; FIG. 15 is a schematic cross-sectional view of yet another embodiment of the microdisplay panel of FIG. 8 along line A-A; FIG. 16 is a schematic cross-sectional view of yet another embodiment of the microdisplay panel of FIG. 8 along line A-A.

Referring to fig. 3 and 4, fig. 4 is a schematic cross-sectional view taken along line A-A in fig. 3, and a micro display chip 10 is provided, wherein the micro display chip 10 includes a light emitting region I and a non-light emitting region II surrounding the light emitting region I.

In some embodiments, the micro display chip 10 includes: a driving back plate 11, and a light emitting array 12 disposed on the driving back plate 11; the light emitting array 12 is located in the light emitting region I. The driving back plate 11 may be an IC board or a TFT substrate.

In some embodiments, the light emitting array 12 includes: the light emitting table tops 121 are arranged in an array, the light emitting table tops 121 are electrically connected with the driving back plate 11, and the driving back plate 11 is used for controlling the light emitting table tops 121 to be turned on and off.

In some embodiments, the microdisplay chip 10 further includes: the current spreading structure 15 is disposed on the adjacent light emitting mesa 121 to achieve the current spreading effect.

In some embodiments, the microdisplay chip 10 further includes: the number of the microlenses 16 is the same as that of the light emitting mesas 121, and one microlens 16 is disposed on one side of each light emitting mesa 121 away from the driving back plate 11.

Referring to fig. 5, the view directions of fig. 5 and fig. 4 are identical, and a metal layer 13 is formed in the non-light emitting region II.

In some embodiments, metal layer 13 is electrically connected to light emitting array 12, and metal layer 13 serves as an electrode electrically connected to light emitting array 12.

In some embodiments, the light emitting mesa 121 includes an N-type semiconductor layer, a P-type semiconductor layer, and a light emitting layer (not shown) therebetween, the N-type semiconductor layer being adjacent to the driving backplate 11 and electrically connected to the driving backplate 11.

In some embodiments, the microdisplay chip 10 further includes: a top conductive layer 17 on top of the light emitting array 12, the top conductive layer 17 being electrically connected to the top of the light emitting array 17 and the top conductive layer 16 being electrically connected to the metal layer 13. Specifically, the top conductive layer is electrically connected to the P-type semiconductor layer, and the top conductive layers of all the light emitting mesas 121 are electrically connected to each other, and the top conductive layer is also electrically connected to the metal layer 13 and the current spreading structure 15.

In some embodiments, the top conductive layer 17 may also be electrically connected to an N-type semiconductor layer.

After forming the metal layer 13, further including: a light absorbing layer 14 is formed on the metal layer 13, and the surface of the light absorbing layer 14 has a plurality of roughened protrusions. The specific process of forming the light-absorbing layer 14 is shown in fig. 6 to 7.

In some embodiments, a metal layer 13 and a light absorbing layer 14 having a plurality of roughened protrusions on the surface are disposed around the light emitting region I.

Referring to fig. 6, a light absorbing material layer 141 is formed on the metal layer 13 by at least one coating and exposure developing process; the method for coating, exposing and developing comprises the following steps: forming a light absorbing material film (not shown) on the metal layer 13 and the light emitting region I; and exposing and developing the light-absorbing material film based on the mask plate to remove the light-absorbing material film formed on the light-emitting area I.

In some embodiments, during the formation of the light-absorbing layer 14, the thickness of the light-absorbing layer 14 is increased by multiple coating and exposure and development processes, for example, when the thickness of the deposited light-absorbing material film is about to 8000 angstroms, the light-absorbing material film is subjected to exposure and development to remove the light-absorbing material film formed on the light-emitting region I; the coating and exposure development steps described above are cycled to a thickness of approximately 24000 angstroms for the light absorbing layer 14.

In some embodiments, the material of the light absorbing material film may be photoresist, gray glue, inorganic anti-reflective material (e.g., znO-SiO ₂), or black inorganic material (e.g., carbon nanotubes, etc.).

Referring to fig. 7, the surface of the light absorbing material layer 141 is roughened to form the light absorbing layer 14, so that the surface of the light absorbing layer 14 has a plurality of roughened protrusions.

Through the light absorption layer 14 located on the metal layer 13, and the surface of the light absorption layer 14 is provided with a plurality of rough convex parts, the surface area of the surface of the non-smooth light absorption layer 14 is increased, and the light emitted by the light emitting area I reaches the surface of the light absorption layer 14 through external reflection to generate diffuse reflection, so that the re-reflection of the full-band light can be effectively reduced, and the picture display quality is improved.

In some embodiments, the roughening treatment method for the surface of the light absorbing material layer 141 includes: the surface of the light absorbing material layer 141 is roughened by an ion etching process, so that the surface of the light absorbing layer 14 has a plurality of roughened protrusions with different shapes.

In some embodiments, the etching gas in the ion etching process comprises: one or more of O ₂、CF₄ and CL ₂.

Since the ion etching process does not generate external force on the micro display chip 10, the micro display chip 10 is not broken or scratched in the roughening process, and fine alignment with the light absorption layer 14 is not needed, so that the process difficulty of roughening treatment is effectively reduced. In addition, the shapes of a plurality of coarsened convex parts formed by coarsening treatment of an ion etching process are different, namely, the coarsened convex parts are of irregular sizes, so that the diffuse reflection effect can be effectively enhanced, the re-reflection of full-band light rays can be further reduced, and the picture display quality can be improved.

It should be noted that, since the ion etching process is anisotropic, only the top surface of the light absorbing material layer 141 is etched to form a plurality of roughened protrusions during the roughening process.

In some embodiments, since the material of the light absorbing material film is photoresist, gray, inorganic anti-reflective material (e.g., znO-SiO ₂) or black inorganic material (e.g., carbon nanotubes, etc.), the material of the light absorbing layer correspondingly formed is also photoresist, gray, inorganic anti-reflective material (e.g., znO-SiO ₂) or black inorganic material (e.g., carbon nanotubes, etc.).

With continued reference to fig. 7, in some embodiments, after forming the light absorbing layer 14, further comprises: baking the light-absorbing layer 14; wherein the baking temperature of the baking treatment is 120-150 ℃ and the baking time is 50-100 minutes. In one embodiment, the baking temperature of the baking process is 135 degrees celsius and the baking time is 60 minutes.

In some embodiments, the roughened protrusions formed are tapered structures; wherein the width of the bottom of the coarsening convex part is 50-200 nanometers, and the height of the coarsening convex part is 50-300 nanometers.

Referring to fig. 8, the directions of the views in fig. 8 and fig. 3 are identical, the micro-display chip 10 is packaged by surrounding the outer frame 20, and the light emitting region I and the light absorbing layer 14 of the micro-display chip 10 are exposed by the outer frame 20.

Referring to fig. 10 and 11, in some embodiments, the light absorbing layer 14 is disposed in the gaps between the adjacent microlenses 16, and the surface of the light absorbing layer 14 in the gaps between the adjacent microlenses 16 has a plurality of roughened protrusions.

With continued reference to fig. 10, adjacent microlenses 16 are disposed adjacent to each other, and the light-absorbing layer 14 is disposed above the junction of the two microlenses 16.

With continued reference to fig. 11, a certain gap is formed between the adjacent microlenses 16, a portion of the light absorbing layer 14 is located inside the gap between the adjacent two microlenses 16, and a portion of the light absorbing layer 14 is located above the junction of the adjacent two microlenses 16.

In some embodiments, the positions of the plurality of roughened protrusions between adjacent microlenses 16 are disposed corresponding to the current spreading structures 15.

Referring to fig. 12, in some embodiments, the bottom of the outer frame 20 is flush with the bottom of the driving backboard 11, and the top of the outer frame 20 is higher than the top of the light absorbing layer 14.

Referring to fig. 13, in some embodiments, the top of the frame 20 is flush with the top of the light absorbing layer 14.

Referring to fig. 14, in some embodiments, the top height of the outer frame 20 is lower than the top height of the outer frame 20.

Referring to fig. 15, in some embodiments, the top surface of the outer frame 20 is an inclined surface, and the height of the top surface of the outer frame 20 near the light-absorbing layer 14 is higher than the height of the top surface far from the light-absorbing layer 14.

Referring to fig. 16, in some embodiments, the bottom of the driving backboard 11 is also wrapped with an outer frame 20.

In some embodiments, further comprising: providing a connecting wire 30, wherein the connecting wire 30 comprises a first connecting end and a second connecting end which are opposite; electrically connecting the first connection end of the connection wire 30 with the micro display chip 10; providing a connector 40; the second connection end of the connection wire 30 is electrically connected with the connector 40, and the connector 40 is connected with the external matched equipment.

In some embodiments, the microdisplay panel is a Micro LED microdisplay panel.

The micro display panel has a very small volume, and the dimensions of the length and width are between 500 μm and 50000 μm. The area of the light emitting region of the above-described micro display panel is very small, such as 1mm×1mm, 2.64mm×2.02mm, 3mm×5mm, or the like. The light emitting area of the micro display panel includes a plurality of micro LED pixels arranged in an array, and a specific pixel arrangement mode may be one of 320×240, 640×480, 1600×1200, 1920×1080, 2560×1440. The size of a single micro LED pixel is between 100nm and 100 microns. In some embodiments, the size of a single micro LED pixel is between 150nm and 15 microns. In some embodiments, the size of a single micro LED pixel can also be less than 10 microns.

The back of the miniature LED pixel array is provided with a driving back plate, the driving back plate is electrically connected with the miniature LEDs in the miniature LED pixel array, the driving back plate can acquire signals such as image data from the outside, and the corresponding miniature LEDs can be controlled to emit light or not. The drive back plate is TFT (Thin Film Transistor) plates or IC (Integrated Circuit) plates. Illustratively, the driving back plate of the micro display panel is integrated with a frame buffer, a column driving circuit and a row driving circuit, wherein the frame buffer comprises a first pixel storage area, and the micro LED pixel array comprises a second pixel storage area. The pixel gray data with a complete frame outside can firstly enter a first pixel storage area of a frame buffer, a column driving circuit can load the pixel gray data in the first pixel storage area of the frame buffer to a second pixel storage area of a miniature LED pixel array, and a row driving circuit can scan the pixel gray data in the second pixel storage area and generate pulse modulation signals so as to achieve the aim of displaying different gray scales. When driving a plurality of micro LED pixels in the micro LED pixel array, a single pixel independent driving mode or a plurality of pixel units independent driving mode can be adopted, and the specific driving mode should not limit the application.

Fig. 9 is a schematic structural diagram of a roughening treatment step in a method for forming a micro-display panel according to another embodiment of the invention.

The present embodiment is a description of a method for forming a micro display panel based on the above embodiment (fig. 6), and the other embodiments are the same, except that: the roughening treatment adopts a mould imprinting process. Please refer to fig. 9 in detail.

Referring to fig. 9, a mold imprinting process is used to roughen the surface of the light absorbing material layer 141, so that the surface of the light absorbing layer 14 has a plurality of roughened protrusions with the same shape.

It should be noted that the shapes of the plurality of coarsened protruding portions are the same, i.e., the plurality of coarsened protruding portions are regular in size.

In some embodiments, the mold imprinting process forms a plurality of roughened protrusions on the surface of the light-absorbing layer 14 by way of imprinting by the mold 200. It should be noted that, during the imprinting process of the mold 200, the mold 200 is required to be aligned with the light-absorbing material layer 141 precisely, so as to avoid the mold from fracturing or scratching the micro-display chip 10.

In the roughening treatment using the mold imprinting process, the top surface of the light absorbing material layer 141 is only imprinted by the mold to form a plurality of roughened protrusions.

Accordingly, in an embodiment of the present invention, a micro display panel is further provided, please continue to refer to fig. 7 to fig. 9, which includes: a micro display chip 10, the micro display chip 10 including a light emitting region I, and a non-light emitting region II surrounding the light emitting region I; a metal layer 13 located in the non-light emitting region II; the light absorption layer 14 is positioned on the metal layer 13, and the surface of the light absorption layer 14 is provided with a plurality of coarsening convex parts; the bezel 20 surrounds the case 20 encapsulating the micro display chip 10, and the case 20 exposes the light emitting region I and the light absorbing layer 14 of the micro display chip 10.

With continued reference to fig. 7, in some embodiments, the shapes of the roughened protrusions are different, i.e., the roughened protrusions are irregularly sized. The coarsening convex parts with irregular sizes can effectively enhance the diffuse reflection effect, further reduce the re-reflection of full-band light rays and improve the picture display quality.

With continued reference to fig. 9, in some embodiments, the shapes of the plurality of roughened protrusions may be the same, i.e., the plurality of roughened protrusions are regular in size.

With continued reference to fig. 7-9, in some embodiments, the microdisplay chip 10 includes: a driving back plate 11, and a light emitting array 12 disposed on the driving back plate 11; the light emitting array 12 is located in the light emitting region I.

With continued reference to fig. 7-9, in some embodiments, metal layer 13 is electrically connected to light emitting array 12, and metal layer 13 serves as an electrode electrically connected to light emitting array 12.

With continued reference to fig. 7-9, in some embodiments, the light emitting array 12 includes: the light emitting table tops 121 are arranged in an array, the light emitting table tops 121 are electrically connected with the driving back plate 11, and the driving back plate 11 is used for controlling the light emitting table tops 121 to be turned on and off.

With continued reference to fig. 7-9, in some embodiments, the microdisplay chip 10 further includes: the current spreading structure 15 is disposed on the adjacent light emitting mesa 121 to achieve the current spreading effect.

With continued reference to fig. 7-9, in some embodiments, the microdisplay chip 10 further includes: the number of the microlenses 16 is the same as that of the light emitting mesas 121, and one microlens 16 is disposed on one side of each light emitting mesa 121 away from the driving back plate 11.

In some embodiments, the material of the light absorbing layer 14 may be photoresist, gray, inorganic anti-reflective material, or black inorganic material.

In some embodiments, the roughened protrusion is a tapered structure; wherein the width of the bottom of the coarsening convex part is 50-200 nanometers, and the height of the coarsening convex part is 50-300 nanometers.

With continued reference to fig. 8, in some embodiments, further comprising: the connecting wire 30 comprises a first connecting end and a second connecting end which are opposite, and the first connecting end of the connecting wire 30 is electrically connected with the micro display chip 10; the second connection end of the connection wire 30 is electrically connected with the connector 40, and the connector 40 is connected with external matched equipment.

With continued reference to fig. 10 and 11, in some embodiments, the light absorbing layer 14 is disposed in the gaps between adjacent microlenses 16, and the surface of the light absorbing layer 14 in the gaps between adjacent microlenses 16 has a plurality of roughened protrusions.

Accordingly, in an embodiment of the present invention, a micro display chip is further provided, please continue to refer to fig. 7 to fig. 9, including: a light emitting region I; a non-light emitting region II located around the light emitting region I; a metal layer 13 located in the non-light emitting region II; the light-absorbing layer 14 is positioned on the metal layer 13, and the surface of the light-absorbing layer 14 is provided with a plurality of coarsened convex parts.

With continued reference to fig. 9, in some embodiments, the plurality of roughened protrusions have the same morphology.

With continued reference to fig. 7 and 9, in some embodiments, further comprising: the drive back plate 11: the light emitting array 12 is disposed on the driving back plate 11, and the light emitting array 12 is located in the light emitting area I.

With continued reference to fig. 7 and 9, in some embodiments, metal layer 13 is electrically connected to light emitting array 12, and metal layer 13 serves as an electrode electrically connected to light emitting array 12.

With continued reference to fig. 7 and 9, in some embodiments, further comprising: a top conductive layer 17 on top of the light emitting array 12, the top conductive layer 17 being electrically connected to the top of the light emitting array 12, and the top conductive layer 17 being electrically connected to the metal layer 13.

With continued reference to fig. 7 and 9, in some embodiments, the light emitting array 12 includes: the light emitting table tops 121 are arranged in an array, the light emitting table tops 121 are electrically connected with the driving back plate 11, and the driving back plate 11 is used for controlling the light emitting table tops 121 to be turned on and off.

With continued reference to fig. 7 and 9, in some embodiments, further comprising: and a current spreading structure 15 disposed between the adjacent light emitting mesas 121, the current spreading structure 15 being electrically connected with the top conductive layer 17.

With continued reference to fig. 7 and 9, in some embodiments, further comprising: the number of the microlenses 16 is the same as that of the light emitting mesas 121, and one microlens 16 is disposed on one side of each light emitting mesa 121 away from the driving back plate 11.

With continued reference to fig. 7 and 9, in some embodiments, the light absorbing layer 14 is disposed in the gaps between adjacent microlenses 16, and the surface of the light absorbing layer 14 in the gaps between adjacent microlenses 16 has a plurality of roughened protrusions.

With continued reference to fig. 7 and 9, in some embodiments, the positions of the roughened protrusions between adjacent microlenses 16 correspond to the positions of the current spreading structures 15.

In some embodiments, the material of the light absorbing layer 14 includes: photoresist, ash glue, inorganic anti-reflection material or black inorganic material.

Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.

Claims

1. A micro display chip, comprising:

A light emitting region;

A non-light emitting region located around the light emitting region;

a metal layer located in the non-light emitting region;

The light absorption layer is positioned on the metal layer, and the surface of the light absorption layer is provided with a plurality of coarsening convex parts.

2. The micro-display chip of claim 1, wherein the plurality of roughened protrusions have different morphologies.

3. The micro-display chip of claim 1, wherein the plurality of roughened protrusions have the same morphology.

4. The micro-display chip of claim 1, further comprising: drive backplate: the light emitting array is arranged on the driving backboard and is positioned in the light emitting area.

5. The micro display chip as set forth in claim 4, wherein the metal layer is electrically connected to the light emitting array, the metal layer serving as an electrode electrically connected to the light emitting array.

6. The micro-display chip of claim 5, further comprising: and a top conductive layer on top of the light emitting array, the top conductive layer electrically connected to the top of the light emitting array, and the top conductive layer electrically connected to the metal layer.

7. The micro-display chip of claim 6, wherein the light emitting array comprises: the light-emitting table tops are electrically connected with the driving backboard, and the driving backboard is used for controlling the light-emitting table tops to be turned on and turned off.

8. The micro-display chip of claim 7, further comprising: and the current expansion structure is arranged between the adjacent light emitting table tops and is electrically connected with the top conducting layer.

9. The micro-display chip of claim 8, further comprising: the number of the microlenses is the same as that of the light-emitting table tops, and one microlens is arranged on one side, away from the driving backboard, of each light-emitting table top.

10. The micro display chip as set forth in claim 9, wherein the light absorbing layer is disposed in a gap between adjacent ones of the micro lenses, and a surface of the light absorbing layer in the gap between adjacent ones of the micro lenses has a plurality of the roughened protrusions.

11. The micro-display chip of claim 10, wherein positions of the plurality of roughened protrusions between adjacent micro lenses correspond to positions of the current spreading structures.

12. The micro-display chip of claim 1, wherein the material of the light absorbing layer comprises: photoresist, ash glue, inorganic anti-reflection material or black inorganic material.

13. The micro-display chip of claim 1, wherein the roughened protrusion has a tapered structure; wherein the width of the bottom of the coarsening convex part is 50-200 nanometers, and the height of the coarsening convex part is 50-300 nanometers.

14. The micro-display chip as set forth in any one of claims 1 to 13, wherein the metal layer and the light absorbing layer having the roughened protrusions on the surface are disposed around the light emitting region.

15. A micro display panel, comprising:

The micro display chip of any one of claims 1 to 14;

And the outer frame surrounds and encapsulates the micro display chip, and the light emitting area and the light absorbing layer of the micro display chip are exposed by the outer frame.

16. The microdisplay panel of claim 15, wherein the top height of the bezel is higher than the height of the light absorbing layer.

17. The microdisplay panel of claim 15, wherein a top height of the bezel is level with a height of the light absorbing layer.

18. The microdisplay panel of claim 15, wherein a top height of the bezel is lower than a height of the light absorbing layer.

19. The microdisplay panel of claim 15, further comprising: the connecting wire comprises a first connecting end and a second connecting end which are opposite to each other, and the first connecting end of the connecting wire is electrically connected with the micro display chip; the second connecting end of the connecting wire is electrically connected with the connector, and the connector is connected with equipment matched with the outside.

20. A method of forming a micro display panel, comprising:

Providing a micro display chip comprising a light emitting region, and a non-light emitting region surrounding the light emitting region;

Forming a metal layer in the non-light-emitting region;

Forming a light absorption layer on the metal layer, wherein the surface of the light absorption layer is provided with a plurality of coarsening convex parts;

and surrounding and packaging the micro-display chip by adopting an outer frame, wherein the outer frame exposes the light-emitting area and the light-absorbing layer of the micro-display chip.

21. The method of forming a microdisplay panel of claim 20, wherein forming the light absorbing layer on the metal layer comprises: forming a light absorption material layer on the metal layer by adopting at least one-time coating and exposure developing treatment; roughening the surface of the light absorbing material layer to form the light absorbing layer so that the surface of the light absorbing layer is provided with a plurality of roughening convex parts; the method for coating, exposing and developing comprises the following steps: forming a light absorbing material film on the metal layer and the light emitting region; and exposing and developing the light-absorbing material film based on a mask plate to remove the light-absorbing material film formed on the light-emitting area.

22. The method of forming a micro-display panel according to claim 21, wherein the roughening the surface of the light absorbing material layer comprises: and carrying out roughening treatment on the surface of the light absorbing material layer by adopting an ion etching process so that the surface of the light absorbing layer is provided with a plurality of roughening convex parts, and the shapes of the roughening convex parts are different.

23. The method of forming a microdisplay panel of claim 22, wherein the etching gas in the ion etching process comprises: one or more of O ₂、CF₄ and CL ₂.

24. The method of forming a micro-display panel according to claim 22, wherein the roughening the surface of the light absorbing material layer comprises: and carrying out coarsening treatment on the surface of the light absorbing material layer by adopting a mould imprinting process so that the surface of the light absorbing layer is provided with a plurality of coarsening convex parts, and the shapes of the coarsening convex parts are the same.

25. The method of forming a micro-display panel of claim 22, further comprising, after forming the light absorbing layer and before using the bezel packaging: and baking the light absorption layer.

26. The method of forming a micro-display panel according to claim 25, wherein the baking temperature of the baking process is 120 degrees celsius to 150 degrees celsius and the baking time is 50 minutes to 100 minutes.

27. A near-eye display device, comprising: the micro display chip of any one of claims 1 to 13.