CN118039740A - Solar cell preparation process and solar cell - Google Patents
Solar cell preparation process and solar cell Download PDFInfo
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- CN118039740A CN118039740A CN202410427784.XA CN202410427784A CN118039740A CN 118039740 A CN118039740 A CN 118039740A CN 202410427784 A CN202410427784 A CN 202410427784A CN 118039740 A CN118039740 A CN 118039740A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
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- 229910052710 silicon Inorganic materials 0.000 description 8
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- 229910052581 Si3N4 Inorganic materials 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Abstract
The application relates to a preparation process of a solar cell and the solar cell, wherein the preparation process of the solar cell comprises the following steps: applying a bias voltage to the battery plate; the laser emission device projects laser to the battery piece, a light spot is formed on the surface of the battery piece, the light spot comprises a hollowed-out area, and a fine grid in the battery piece is overlapped with the hollowed-out area; the laser emitting device moves along the extending direction of the fine grid, so that the laser sweeps the battery piece and skips the position of the main grid in the battery piece. The thin grid overlaps with the hollowed-out area in the light spot, so that the possibility that the energy of the laser is gathered on the thin grid of the battery piece and damage is caused to the thin grid can be reduced, the efficiency of the battery piece can be improved, and the energy utilization rate of the laser can be improved. In the process of sweeping the battery piece by laser, the laser skips the position of the main grid in the battery piece, so that the possibility of damage to the main grid caused by the laser can be reduced, the yield of the battery piece can be improved, the production efficiency of the battery piece can be improved, and the performance of the battery piece can be provided.
Description
Technical Field
The application relates to the technical field of solar cell processing, in particular to a solar cell preparation process and a solar cell.
Background
In the processing process of the battery piece, laser is irradiated to the battery piece, deflection voltage is applied at the same time, contact resistance between metal and semiconductor is reduced, and photoelectric conversion efficiency of the photovoltaic cell is improved. In the prior art, a laser is generally used to form a circular or square light spot on a grid line, and irradiates all grid lines in a battery piece, so that the grid lines of the battery piece are easily damaged, and the performance of the battery piece is reduced, the loss is increased and the production efficiency is reduced.
Disclosure of Invention
The application provides a preparation process of a solar cell and the solar cell, which are used for solving the problem that the grid line of a cell is damaged in the processing process of the cell in the prior art.
The embodiment of the application provides a preparation process of a solar cell, which is used for processing a cell piece, wherein the front surface and/or the back surface of the cell piece comprise a main grid and a fine grid, and the preparation process of the solar cell comprises the following steps:
applying a bias voltage to the battery plate;
The laser emission device projects laser to the battery piece, a light spot is formed on the surface of the battery piece, the light spot comprises a hollowed-out area, and the thin grid in the battery piece is overlapped with the hollowed-out area;
the laser emitting device moves along the extending direction of the fine grid, so that the laser sweeps the battery piece and skips the position of the battery piece, where the main grid is arranged.
In one possible embodiment, the solar cell manufacturing process includes, before applying the bias voltage to the cell sheet:
and adjusting the size of the hollowed-out area according to the parameters of the battery piece so that the size of the hollowed-out area is larger than the width of the fine grid.
In one possible embodiment, the size of the light spot projected to the battery piece by the laser emitting device is 80 μm to 200 μm along the width direction of the fine grid; the size of the light spot projected to the battery piece by the laser emitting device is 80-200 μm along the length direction of the fine grid.
In one possible implementation manner, the cross section of the hollowed-out area of the light spot projected to the battery piece by the laser emission device is rectangular or circular.
In one possible implementation manner, the distance between two sides of the fine grid and the edge of the hollowed-out area is 0 μm to 200 μm along the width direction of the fine grid.
In one possible embodiment, the laser emitting device emits laser light having a wavelength of 390nm to 480nm.
In one possible embodiment, when the laser emitting device moves along the extending direction of the fine grid, the laser sweeps the battery piece and skips the position of the battery piece where the main grid is arranged, the preparation process of the solar cell includes:
when the laser emission device moves to the position of the battery piece where the main grid is arranged, the laser emission device is turned off;
And when the laser emitting device passes over the position of the battery piece where the main grid is arranged, the laser emitting device is turned on.
In one possible embodiment, the battery piece includes a plurality of thin grids, the thin grids extend along the length direction of the battery piece, the thin grids are arranged at intervals along the width direction of the battery piece, the single laser emitting device is used for sweeping the battery piece, and when the laser is used for sweeping the battery piece along the extending direction of the thin grids, the preparation process of the solar cell includes:
the laser emission device moves along the length of the battery piece, when the laser emitted by the laser emission device moves to the end part of the fine grid, the laser emission device moves along the width direction of the battery piece, and the laser emitted by the laser emission device jumps to the adjacent fine grid, so that the laser can sweep a plurality of fine grids in sequence.
In one possible embodiment, the battery piece includes a plurality of thin grids, the thin grids extend along the length direction of the battery piece, the thin grids are arranged at intervals along the width direction of the battery piece, the battery piece is swept by a plurality of laser emitting devices, the laser emitting devices are arranged at intervals along the width direction of the battery piece, and when the laser sweeps the battery piece along the extending direction of the thin grids, the preparation process of the solar cell includes:
The laser emission devices respectively project laser to the thin grids;
And the laser emitting devices move along the length direction of the battery piece at the same time, so that a plurality of lasers can sweep a plurality of thin grids at the same time.
The embodiment of the application also provides a solar cell which is processed by the preparation process of the solar cell.
The application relates to a preparation process of a solar cell and the solar cell, wherein the preparation process of the solar cell comprises the following steps: applying a bias voltage to the battery plate; the laser emission device projects laser to the battery piece, a light spot is formed on the surface of the battery piece, the light spot comprises a hollowed-out area, and a fine grid in the battery piece is overlapped with the hollowed-out area; the laser emitting device moves along the extending direction of the fine grid, so that the laser sweeps the battery piece and skips the position of the main grid in the battery piece. The thin grid overlaps with the hollowed-out area in the light spot, so that the possibility that the energy of the laser is gathered on the thin grid of the battery piece and damage is caused to the thin grid can be reduced, the efficiency of the battery piece can be improved, and the energy utilization rate of the laser can be improved. In the process of sweeping the battery piece by laser, the laser skips the position of the main grid in the battery piece, so that the possibility of damage to the main grid caused by the laser can be reduced, the yield of the battery piece can be improved, the production efficiency of the battery piece can be improved, and the performance of the battery piece can be provided.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
FIG. 1 is a schematic diagram of one embodiment of a spot on a battery cell according to one embodiment of the present application;
FIG. 2 is a schematic diagram of another embodiment of a spot on a battery cell according to an embodiment of the present application;
FIG. 3 is a schematic diagram of another embodiment of a spot on a battery cell according to an embodiment of the present application;
FIG. 4 is a schematic diagram of another embodiment of a spot on a battery cell according to an embodiment of the present application;
FIG. 5 is a schematic view of a spot on a battery cell according to another embodiment of the application;
fig. 6 is a schematic view of a battery sheet in the case of streak failure.
Reference numerals:
1-a battery piece;
11-fine grid;
12-main grid;
2 (2 a, 2b, 2c, 2 d) -spots;
21 (21 a, 21b, 21c, 21 d) -hollowed-out areas.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
Detailed Description
For a better understanding of the technical solution of the present application, the following detailed description of the embodiments of the present application refers to the accompanying drawings.
It should be understood that the described embodiments are merely some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one relationship describing the association of the associated objects, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
It should be noted that, the terms "upper", "lower", "left", "right", and the like in the embodiments of the present application are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In the context of this document, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on the other element or be indirectly on the other element through intervening elements.
According to the preparation process of the solar cell provided by the embodiment of the application, the cell piece 1 is processed by utilizing the photoluminescence phenomenon, charge carriers in the photovoltaic cell piece 1 are excited by high-intensity laser irradiation, and meanwhile, a certain deflection voltage is applied, so that local current is caused to cause sintering, silver paste and silicon are mutually diffused, and the contact resistance between metal and a semiconductor is remarkably reduced. The present application is not limited to the structure of the battery sheet 1, and the types of the battery sheet 1 include, but are not limited to, an emitter back passivation cell (PASSIVATED EMITTER REAR CELL, PERC), an oxide passivation contact cell (Tunnel Oxide Passivated Contact, TOPCon), an intrinsic thin film Heterojunction cell (Heterojunction WITH INTRINSIC THIN-film, HJT), an interdigital back contact cell (INTERDIGITATED BACK CONTACT, IBC), a perovskite cell, and the like.
For the PERC cell, the PERC cell sequentially comprises a front surface metal silver electrode, a front surface silicon nitride passivation layer, a phosphorus layer emitter, a P-type base silicon layer, a local aluminum back field, a metal aluminum back electrode and a back passivation layer (Al 2O 3/SiNx) along the thickness direction of the PERC cell. The PERC battery adopts a passivation film to passivate the back surface, replaces an all-aluminum back surface field, enhances the internal back reflection of light rays on silicon base, reduces the recombination rate of the back surface, and improves the efficiency of the battery by 0.5% -1%.
For TOPCon cells, the TOPCon cell includes, in order along its thickness, a metal silver electrode, a front surface silicon nitride passivation layer, a boron-doped emitter, an N-base silicon layer, a diffusion doped layer, ultra-thin silicon oxide, doped polysilicon, silicon nitride, a metal silver electrode. The back of the battery consists of a layer of ultrathin silicon oxide (1 nm-2 nm) and a layer of phosphor doped microcrystalline amorphous mixed Si film, which form a passivation contact structure together. The structure can prevent minority carrier hole recombination and improve the open-circuit voltage and short-circuit current of the battery. The ultra-thin oxide layer may allow multi-electron tunneling into the polysilicon layer while blocking minority carrier hole recombination. The excellent passivation effect of the ultrathin silicon oxide and the heavily doped silicon film enables the surface energy band of the silicon wafer to bend, so that a field passivation effect is formed, the probability of electron tunneling is greatly increased, the contact resistance is reduced, the open-circuit voltage and the short-circuit current of the battery are improved, and the conversion efficiency of the battery is improved.
For HJT cells, the HJT cell includes, in order along its thickness direction, a front low-temperature silver electrode, a front conductive film, an N-type amorphous silicon film, an intrinsic amorphous silicon film, an N-type base silicon layer, an intrinsic amorphous silicon film, a P-type amorphous silicon film, a back conductive film, a back low-temperature silver electrode.
For the IBC battery, the IBC battery sequentially comprises a silicon nitride reverse layer, an N+ front surface field, an N-type substrate silicon layer, a P+ emitter, an N+ back field, an aluminum oxide passivation layer, a silicon nitride anti-reflection layer and a metal silver electrode along the thickness direction of the IBC battery. The IBC battery can obtain a P region and an N region which have good uniformity and accurate and controllable junction depth by using an ion implantation technology, the front surface of the battery is not shielded by a grid line, the shading current loss of a metal electrode can be eliminated, the maximum utilization of incident photons is realized, and the short-circuit current can be improved by about 7 percent compared with that of a conventional solar battery; because of the back contact structure, the grid line shielding problem is not needed to be considered, and the grid line proportion can be properly widened, so that the series resistance is reduced and the filling factor is high; the surface passivation and surface trapping structures can be optimally designed to achieve lower front surface recombination rates and surface reflection.
In the case of a perovskite battery, the perovskite battery includes a substrate material, a conductive thin film, an electron transport layer (titanium oxide), a perovskite absorption layer (hole transport layer), and a metal cathode in this order along the thickness direction thereof. The perovskite material has higher light absorption coefficient and longer carrier diffusion distance, photons absorbed by the perovskite material are easily collected by the electrode after being converted into electrons, and the loss is smaller, so that higher photo-generated voltage and current can be generated, and the perovskite shows higher photoelectric conversion efficiency.
The embodiment of the application provides a preparation process of a solar cell, which is used for processing a cell 1, wherein the front surface and/or the back surface of the cell 1 comprises a main grid 12 and a fine grid 11 so as to reduce the contact resistance between a metal grid line and a semiconductor matrix in the cell 1 and improve the photoelectric conversion efficiency of the cell 1. The preparation process of the solar cell comprises the following steps:
Applying a bias voltage to the battery plate 1;
The laser emission device projects laser to the battery piece 1, a light spot 2 is formed on the surface of the battery piece 1, the light spot 2 comprises a hollowed-out area 21, and a fine grid 11 in the battery piece 1 is overlapped with the hollowed-out area 21;
The laser emitting device moves in the direction in which the fine grid 11 extends, causing the laser to sweep the battery plate 1 and skip the position in the battery plate 1 where the main grid 12 is provided.
When bias voltage is applied to the battery piece 1, the battery piece 1 can be placed on the bearing table firstly, one side of the battery piece 1 is abutted against the bearing table, a probe is arranged on the other side of the battery piece 1 and is overlapped with one side of the battery piece 1 far away from the bearing table, and the bearing table and the probe are connected with an external power supply and can apply bias voltage to the battery piece 1. And then laser is projected to the battery piece 1 through a laser emitting device to finish the processing of the battery piece 1.
The energy of the laser emitted by the laser emitting device is concentrated at the position forming the light spot 2 in the battery piece 1, and compared with the position forming the solid round or square light spot 2 in the prior art where the fine grid 11 is arranged on the surface of the battery piece 1, as shown in fig. 1 to 4, the light spot 2 formed on the surface of the battery piece 1 has the hollowed-out area 21, so that the energy of the laser avoids the hollowed-out area 21 and is distributed around the hollowed-out area 21. The thin grid 11 in the battery piece 1 is overlapped with the hollowed-out area 21 in the light spot 2, so that the energy of laser is gathered on the thin grid 11 of the battery piece 1, the local overheating is caused, the possibility of damage to the thin grid 11 is further reduced, the influence on the conductivity of the battery piece 1 and the efficiency of the battery piece is further reduced, and the energy utilization rate of the laser can be improved.
The laser emitting device moves along the extending direction of the fine grid 11, so that the light spot 2 formed by the laser on the battery piece 1 moves along the fine grid 11 to sweep the whole battery piece 1, and the conductivity of the whole battery piece 1 and the efficiency of the battery piece can be improved. In the process of sweeping the battery piece 1 by laser, the laser skips the position of the battery piece 1 where the main grid 12 is arranged, so that the possibility of damage to the main grid 12 caused by the laser can be reduced, the yield of the battery piece 1 can be improved, the production efficiency of the battery piece 1 can be improved, and meanwhile, the performance of the battery piece 1 can be provided.
In one possible embodiment, before the carrier table applies the bias voltage to the battery plate 1, the method includes:
the size of the hollowed-out area 21 is adjusted according to the parameters of the battery piece 1, so that the size of the hollowed-out area 21 is larger than the width of the fine grid 11.
The laser emitting device may include a laser emitter and an optical element, and laser light emitted from the laser emitter is projected to the battery sheet 1 through the optical element. The optical element may be a spiral phase plate or similar optical element, and the laser emitted by the laser emitter, after passing through the optical element, can form a light spot 2 with a hollowed-out area 21. The size of the light spot 2 and the size of the hollowed-out area 21 in the light spot 2 can be changed by changing the model of the optical element selected. Taking an optical element as a spiral phase plate as an example, the size of the hollowed-out area 21 can be changed by selecting spiral phase plates with different topological charges. The corresponding optical element is selected according to the parameters of the battery piece 1, so that the size of the hollowed-out area 21 is larger than the width of the fine grid 11, the possibility that the energy of laser is gathered on the fine grid 11 can be reduced, and the possibility of damage to the fine grid 11 can be reduced.
In one possible embodiment, the fine grating 11 is located in the hollowed-out area 21, and the distance between the two sides of the fine grating 11 and the edge of the hollowed-out area 21 is 0 μm to 200 μm, preferably 5 μm to 10 μm along the width direction of the fine grating 11.
The thin grating 11 is located in the hollowed-out area 21 of the light spot 2, so that the possibility of damage to the thin grating 11 caused by laser can be reduced, if the distance between the two sides of the thin grating 11 and the edge of the hollowed-out area 21 is larger than 200 μm, the gap between the thin grating 11 and the part with energy of the laser light spot 2 is larger, the effect of reducing the contact resistance between the thin grating 11 and the semiconductor substrate in the battery piece 1 by the laser is poor, and the efficiency and quality of the battery piece 1 after processing are poor. The distance between the two sides of the fine grid 11 and the edge of the hollowed-out area 21 can be 0 μm, 50 μm, 100 μm, 150 μm, 200 μm and the like, preferably 5 μm, so that the damage of laser to the fine grid 11 can be reduced, the contact resistance between the fine grid 11 and the semiconductor substrate in the battery piece 1 can be reduced, and the efficiency and quality of the battery piece 1 after processing can be improved.
In one possible embodiment, the size of the spot 2 is larger than the width of the fine grating 11, and the fine grating 11 overlaps the hollowed-out area 21 in the spot 2. The spot 2 may be circular, square, etc. in shape, and the size of the spot 2 is 80 μm to 200 μm along the length direction and the width direction of the fine grating 11.
The width of the fine grid 11 in the battery piece 1 is 14-23 μm, the distance between the edge of the hollowed-out area 21 in the light spot 2 and the side edge of the fine grid 11 is 0-25 μm, if the size of the light spot 2 is smaller than 80 μm, the size of the areas with energy on two sides of the hollowed-out area 21 in the light spot 2 is smaller, the processing effect on the battery piece 1 is poor, and if the size of the light spot 2 is larger than 200 μm, the size of the areas with energy on two sides of the hollowed-out area 21 in the light spot 2 is larger, and the influence on the adjacent fine grid 11 is caused. The size of the light spot 2 may be 80 μm, 120 μm, 160 μm, 200 μm, etc., and the effect of reducing the contact resistance between the metal and the semiconductor can be improved, thereby improving the efficiency and quality of the battery sheet 1.
The light spot 2 projected to the battery piece 1 by the laser emission device is provided with a hollowed-out area 21, and the shape of the hollowed-out area 21 can be changed by changing the optical element in the selected laser emission device. In one possible implementation, the light spot 2 is in an annular structure, the hollow area 21 is located in the middle of the light spot 2, and the cross section of the hollow area 21 can be rectangular, circular or the like, so that the thin grid 11 in the battery piece 1 can be located in the hollow area 21.
The laser emitting device moves along the extending direction of the fine grid 11 to sweep the whole battery piece 1, so that the size of the hollowed-out area 21 in the light spot 2 is required to be larger than that of the fine grid 11 along the width direction of the fine grid 11, the cross section of the hollowed-out area 21 is round or rectangular, the fine grid 11 in the battery piece 1 is overlapped with the hollowed-out area 21, the energy of laser can be reduced to gather on the fine grid 11, and the possibility of damage to the fine grid 11 is reduced.
As shown in FIG. 1, in one possible embodiment, the light spot 2a includes a circular hollowed-out area 21a, and the maximum distance between two sides of the thin grating 11 and the edge of the hollowed-out area 21a along the width direction of the thin grating 11 is d 1,0μm≤d1. Ltoreq.200 μm. Since the hollowed-out area 21a is circular, the distance between the two sides of the fine grating 11 and the edge of the hollowed-out area 21a is gradually reduced along the extending direction of the fine grating 11. If the maximum distance between the two sides of the fine grid 11 and the edge of the hollowed-out area 21a is d 1 to be greater than 200 μm, the effect of the laser on reducing the contact resistance between the fine grid 11 and the semiconductor substrate in the battery piece 1 is poor, and the efficiency and quality of the processed battery piece 1 are poor.
As shown in fig. 2, in one possible embodiment, the light spot 2b includes a rectangular hollowed-out area 21b, and the distance between the two sides of the thin grid 11 and the edge of the hollowed-out area 21b along the width direction of the thin grid 11 is 0 μm to 25 μm, which may be 0 μm,5 μm, 10 μm, 15 μm, 20 μm, 25 μm, etc., preferably 5 μm to 10 μm, so that not only damage to the thin grid 11 caused by laser light can be reduced, but also contact resistance between the thin grid 11 and the semiconductor substrate in the battery piece 1 can be reduced, which is beneficial to improving efficiency and quality of the battery piece 1 after processing.
In one possible embodiment, the hollowed-out area 21 of the laser emitting device in the light spot 2 formed on the surface of the battery piece 1 can also penetrate through the light spot 2 along the extending direction of the fine grid 11, the fine grid 11 in the battery piece 1 can be completely located in the hollowed-out area 21 of the light spot 2, the possibility that the fine grid 11 overlaps with the position with laser energy in the laser light spot 2 can be further reduced, the possibility of damage to the fine grid 11 can be further reduced, and the utilization rate of the laser energy is improved.
As shown in fig. 3, in one possible embodiment, the light spot 2c is in an arc shape, the hollowed-out area 21c divides the light spot 2c into two arcs and is respectively located at two sides of the width direction of the fine grid 11, the maximum distance between two sides of the fine grid 11 and the edge of the hollowed-out area 21c along the width direction of the fine grid 11 is d 1,0μm≤d1 μm or less and 200 μm, if the maximum distance between two sides of the fine grid 11 and the edge of the hollowed-out area 21c is d 1 or more than 200 μm, the effect of the laser on reducing the contact resistance between the fine grid 11 and the semiconductor substrate in the battery piece 1 is poor, and the efficiency and quality of the battery piece 1 after processing are poor. Because the light spots 2c are arc-shaped, the distance between the two sides of the fine grid 11 and the edge of the hollowed-out area 21c is gradually reduced along the extending direction of the fine grid 11, the minimum distance between the two sides of the fine grid 11 and the edge of the hollowed-out area 21c is d 2,0μm≤d2 -25 μm, which can be 0 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm and the like, preferably 5 μm to 10 μm, so that the damage of laser to the fine grid 11 can be reduced, the contact resistance between the fine grid 11 and the semiconductor substrate in the battery piece 1 can be reduced, and the efficiency and the quality of the battery piece 1 after processing can be improved.
As shown in fig. 4, in one possible embodiment, the light spot 2d includes a rectangular hollowed-out area 21d, and the rectangular hollowed-out area 21d penetrates through the light spot 2d along the extending direction of the fine grid 11, and the distance between two sides of the fine grid 11 and the edge of the hollowed-out area 21d along the width direction of the fine grid 11 is 0 μm to 25 μm, which may be 0 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, and the like, preferably 5 μm to 10 μm, so that not only damage of the fine grid 11 caused by laser light can be reduced, but also contact resistance between the fine grid 11 and the semiconductor substrate in the battery piece 1 can be reduced, which is beneficial to improving efficiency and quality of the battery piece 1 after processing.
In one possible embodiment, the laser emitting device emits laser light having a wavelength of 390nm to 480nm.
Along with the increase of the laser wavelength, the energy of the laser gradually decreases, if the wavelength of the laser is less than 390nm, the energy of the laser is larger, the damage to the battery piece 1 is easy to occur when the laser irradiates on the surface of the battery piece 1, if the wavelength of the laser is more than 480mm, the energy of the laser is smaller, and when the laser irradiates on the surface of the battery piece 1, the effect of reducing the contact resistance between the metal grid line and the semiconductor is poorer, so that the photoelectric conversion efficiency of the battery piece 1 after processing is lower. The wavelength of the laser emitted by the laser emitting device can be 390nm, 410nm, 430nm, 450nm, 480nm and the like, so that the contact resistance between the metal grid line and the semiconductor can be reduced after the laser irradiates the battery piece 1, and the possibility of damage to the battery piece 1 caused by the laser can be reduced.
As the laser sweeps the battery cell 1 in the extending direction of the fine grid 11 and skips the position where the fine grid 11 intersects the main grid 12, the method includes:
when the laser emitting device moves to the position of the battery piece 1 where the main grid 12 is arranged, the laser emitting device is turned off;
when the laser emitting device passes over the position where the main grid 12 is provided in the battery piece 1, the laser emitting device is turned on.
The laser emitting device can also be connected with the control device for controlling the opening and closing of the laser emitting device. After deleting the position of the main grid 12 in the layout drawing of the grid lines in the battery piece 1, the position of the main grid 12 is deleted in the drawing, when the laser emitting device moves to the position of the main grid 12 along the extending direction of the fine grid 11 in the battery piece 1, the control device can control the laser emitting device to be closed, and after the laser emitting device passes over the main grid 12, the control device controls the laser emitting device to be opened again, so that the possibility that laser irradiates the main grid 12 is reduced, and the risk of damage to the main grid 12 is reduced.
As shown in the following table, compared with the processing method of the solar cell 12 in the prior art, the laser skips the main gate 12 in the preparation process of the solar cell provided by the embodiment of the application, so that the damage degree of the cell 1 is reduced, the parameters of the Filling Factor (FF) and the shunt resistance (Rsh) in the cell 1 are improved, and the efficiency (Eta) of the cell 1 is further improved.
As shown in fig. 6, in the process of manufacturing the solar cell, after the laser scans the cell 1, the surface of the cell 1 may have stripes parallel to the fine grid 11, so that the cell 1 may have bad stripes, and the efficiency of the cell 1 may be reduced. Compared with the processing method without skipping the main grid 12 in the prior art, the preparation process of the solar cell provided by the embodiment of the application can reduce the proportion of the bad stripes in the cell 1 from 0.31% to 0.08% by skipping the main grid 12 by laser when the cell 1 is swept by the laser, thereby improving the parameters of the filling factor and the parallel resistance so as to improve the efficiency of the cell 1.
The battery plate 1 comprises a plurality of thin grids 11, the thin grids 11 extend along the length direction of the battery plate 1, the thin grids 11 are arranged at intervals along the width direction of the battery plate 1, and the laser needs to completely sweep the area of the thin grids 11 in the battery plate 1.
As shown in fig. 1, in one possible embodiment, the battery plate 1 is swept by a single laser emitting device. When the laser sweeps the cell 1 along the extending direction of the fine grid 11, the preparation process of the solar cell comprises:
The laser emitting device moves along the length of the battery piece 1, and when the laser emitted by the laser emitting device moves to the end part of the fine grid 11, the laser emitting device moves along the width direction of the battery piece 1, and the laser emitted by the laser emitting device jumps to the adjacent fine grid 11, so that the laser can sweep the fine grids 11 in sequence.
The laser emission device moves along the direction indicated by the arrow in fig. 1 along the S shape relative to the battery piece 1, so that the laser can sweep a plurality of thin grids 11 in sequence, the end control device of the thin grids 11 can control the laser emission device to be closed, and after the laser emission device moves to the adjacent thin grids 11, the laser emission device is controlled to be opened, so that the area of the battery piece 1 where no grid line is arranged can be reduced when the laser irradiates, and the possibility of damage to the battery piece 1 caused by the laser is reduced.
As shown in fig. 5, in one possible embodiment, the battery plate 1 is swept by a plurality of laser emitting devices arranged at intervals along the width direction of the battery plate 1, so that the plurality of laser emitting devices can be aligned with the plurality of fine grids 11 at the same time. When the laser sweeps the cell 1 along the extending direction of the fine grid 11, the preparation process of the solar cell comprises:
The plurality of laser emitting devices respectively project laser to the plurality of fine grids 11;
the plurality of laser emitting devices simultaneously move along the length direction of the battery plate 1, so that the plurality of lasers can simultaneously sweep the plurality of thin grids 11.
The laser needs to completely sweep the area of the thin grid 11 in the battery piece 1, so that a plurality of laser emitting devices can sweep the battery piece 1 at the same time, the efficiency of laser sweeping can be improved, and the processing efficiency of the battery piece 1 can be improved.
The embodiment of the application relates to a solar cell and a preparation process thereof, wherein the preparation process of the solar cell comprises the following steps: applying a bias voltage to the battery plate 1; the laser emission device projects laser to the battery piece 1, a light spot 2 is formed on the surface of the battery piece 1, the light spot 2 comprises a hollowed-out area 21, and a fine grid 11 in the battery piece 1 is overlapped with the hollowed-out area 21; the laser emitting device moves in the direction in which the fine grid 11 extends, causing the laser to sweep the battery plate 1 and skip the position in the battery plate 1 where the main grid 12 is provided. The thin grating 11 overlaps with the hollowed-out area 21 in the light spot 2, so that the possibility that the energy of the laser is gathered on the thin grating 11 of the battery piece 1 and damage is caused to the thin grating 11 can be reduced, the efficiency of the battery piece 1 can be improved, and the energy utilization rate of the laser can be improved. In the process of sweeping the battery piece 1 by laser, the laser skips the position of the battery piece 1 where the main grid 12 is arranged, so that the possibility of damage to the main grid 12 caused by the laser can be reduced, the yield of the battery piece 1 can be improved, the production efficiency of the battery piece 1 can be improved, and meanwhile, the performance of the battery piece 1 can be provided.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A process for manufacturing a solar cell, wherein the process for manufacturing a solar cell is used for processing a cell (1), and the front and/or back of the cell (1) comprises a main grid (12) and a fine grid (11), and the process for manufacturing the solar cell comprises:
applying a bias voltage to the battery plate (1);
The laser emission device projects laser to the battery piece (1), a light spot (2) is formed on the surface of the battery piece (1), the light spot (2) comprises a hollowed-out area (21), and the thin grid (11) in the battery piece (1) is overlapped with the hollowed-out area (21);
The laser emitting device moves along the extending direction of the fine grid (11) to enable the laser to sweep the battery piece (1) and skip the position of the battery piece (1) where the main grid (12) is arranged.
2. The process for manufacturing a solar cell according to claim 1, characterized in that it comprises, before applying a bias voltage to the cell sheet (1):
And adjusting the size of the hollowed-out area (21) according to the parameters of the battery piece (1) so that the size of the hollowed-out area (21) is larger than the width of the fine grid (11).
3. The process for manufacturing a solar cell according to claim 2, characterized in that the size of the spot (2) projected by the laser emitting device to the cell (1) is 80 to 200 μm along the width direction of the fine grid (11); the size of the light spot (2) projected to the battery piece (1) by the laser emission device along the length direction of the fine grid (11) is 80-200 mu m.
4. The process for manufacturing a solar cell according to claim 2, characterized in that the cross section of the hollowed-out area (21) of the light spot (2) projected to the cell (1) by the laser emitting device is rectangular or circular.
5. The process for manufacturing a solar cell according to claim 2, wherein the distance between both sides of the thin grid (11) and the edge of the hollowed-out area (21) is 0 μm to 200 μm along the width direction of the thin grid (11).
6. The process of claim 1, wherein the laser light emitted from the laser light emitting device has a wavelength of 390nm to 480nm.
7. Process for the preparation of a solar cell according to claim 1, characterized in that it comprises, when the laser emitting device is moved in the direction in which the thin grid (11) extends, causing the laser to sweep the cell (1) and to skip the position in the cell (1) where the main grid (12) is provided:
When the laser emission device moves to the position of the battery piece (1) where the main grid (12) is arranged, the laser emission device is turned off;
and when the laser emitting device passes over the position of the battery piece (1) where the main grid (12) is arranged, the laser emitting device is turned on.
8. The process for manufacturing a solar cell according to any one of claims 1 to 7, wherein the cell (1) comprises a plurality of the thin grids (11), the thin grids (11) extend along the length direction of the cell (1), the thin grids (11) are arranged at intervals along the width direction of the cell (1), the cell (1) is swept by a single laser emitting device, and when the laser sweeps the cell (1) along the extending direction of the thin grids (11), the process for manufacturing the solar cell comprises:
the laser emission device moves along the length of the battery piece (1), when the laser emitted by the laser emission device moves to the end part of the fine grid, the laser emission device moves along the width direction of the battery piece (1), and the laser emitted by the laser emission device jumps to the adjacent fine grid (11), so that the laser can sweep a plurality of fine grids (11) in sequence.
9. The process for preparing a solar cell according to any one of claims 1 to 7, wherein the cell (1) comprises a plurality of the thin grids (11), the thin grids (11) extend along the length direction of the cell (1), the thin grids (11) are arranged at intervals along the width direction of the cell (1), the cell (1) is swept by a plurality of laser emitting devices, the laser emitting devices are arranged at intervals along the width direction of the cell (1), and when the laser sweeps the cell (1) along the extending direction of the thin grids (11), the process for preparing the solar cell comprises the following steps:
the laser emitting devices respectively project laser to the thin grids (11);
The plurality of laser emitting devices move along the length direction of the battery piece (1) at the same time, so that a plurality of lasers can sweep a plurality of thin grids (11) at the same time.
10. A solar cell, characterized in that the solar cell is processed by the solar cell manufacturing process according to any one of claims 1 to 9.
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