CN118039706A - Alpha-Ga2O3Schottky diode - Google Patents
Alpha-Ga2O3Schottky diode Download PDFInfo
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- CN118039706A CN118039706A CN202410437708.7A CN202410437708A CN118039706A CN 118039706 A CN118039706 A CN 118039706A CN 202410437708 A CN202410437708 A CN 202410437708A CN 118039706 A CN118039706 A CN 118039706A
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- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The present disclosure provides an α -Ga 2O3 schottky diode. It includes an epitaxial structure: the substrate layer, the epitaxial buffer layer, the alpha-Ga 2O3 epitaxial conductive layer and the alpha-Ga 2O3 epitaxial drift layer are sequentially stacked from bottom to top; or a substrate layer, an epitaxial buffer layer and an alpha-Ga 2O3 epitaxial drift layer which are sequentially stacked from bottom to top; the material of the epitaxial buffer layer is selected from at least one of Ni, ta and BN. According to the method, the epitaxial buffer layer is introduced between the substrate layer and the alpha-Ga 2O3 epitaxial layer, the layer has a lattice constant which is more matched with that of the alpha-Ga 2O3, and the epitaxial quality of the alpha-Ga 2O3 can be effectively improved; in addition, the layer has higher heat conductivity, and can effectively improve the heat dissipation performance of the diode, thereby improving the working stability of the device.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to an alpha-Ga 2O3 Schottky diode.
Background
Gallium oxide (Ga 2O3) is an emerging ultra-wideband semiconductor material. Compared with monoclinic structure beta-Ga 2O3,α-Ga2O3 with thermal steady-state crystal phase, the composite material has larger band gap, higher breakdown field strength and larger Barbary-Gault value, and can be used for preparing power electronic devices with higher voltage resistance and lower on-resistance. The power diode has the advantages of relatively simple structure, higher efficiency, low cost and the like, and is an electronic device widely applied. Much attention has been paid to power diode research based on a-Ga 2O3 epitaxial films. Due to the lack of a homogenous single crystal substrate, the α -Ga 2O3 power diode requires the growth of a thin film of α -Ga 2O3 on a sapphire single crystal substrate of the same crystal type. The structure and the performance of the heterojunction diode are optimized by adjusting the doping concentration and the film thickness of the alpha-Ga 2O3 film between different layers on the sapphire substrate, the breakdown voltage of the kilovolt device can be realized, and the good application prospect is shown.
However, the α -Ga 2O3 thin film diode based on direct epitaxy of a hetero-substrate currently suffers from all or part of the following problems: first, there is a large interface lattice mismatch between the α -Ga 2O3 thin film and the hetero-substrate, which reduces the epitaxial growth quality and doping efficiency of the α -Ga 2O3 thin film, and limits the device performance of the diode. Secondly, the heat conductivity of a heterogeneous substrate (such as sapphire) is low, and the heat dissipation requirement of the alpha-Ga 2O3 power diode under the actual working condition is difficult to support, so that the use stability of the device is affected. Therefore, how to solve the lattice mismatch, electrical connection and heat dissipation problems of the α -Ga 2O3 thin film on the heterogeneous substrate is a key to improving the performance of the α -Ga 2O3 diode device.
Disclosure of Invention
The present disclosure provides an α -Ga 2O3 schottky diode to at least solve the above technical problems existing in the prior art.
According to a first aspect of the present disclosure, there is provided an α -Ga 2O3 schottky diode comprising an epitaxial structure; the epitaxial structure comprises a substrate layer, an epitaxial buffer layer, an alpha-Ga 2O3 epitaxial conductive layer and an alpha-Ga 2O3 epitaxial drift layer which are sequentially stacked from bottom to top;
Or the epitaxial structure comprises a substrate layer, an epitaxial buffer layer and an alpha-Ga 2O3 epitaxial drift layer which are sequentially stacked from bottom to top;
And the material of the epitaxial buffer layer is at least one selected from Ni, ta and BN.
In an embodiment, in the epitaxial structure, the α -Ga 2O3 epitaxial conductive layer and the α -Ga 2O3 epitaxial drift layer are disposed on a partial region of the epitaxial buffer layer; or the alpha-Ga 2O3 epitaxial drift layer is arranged on a partial region of the alpha-Ga 2O3 epitaxial conductive layer; or the alpha-Ga 2O3 epitaxial drift layer is arranged on a partial region of the epitaxial buffer layer.
In an embodiment, the α -Ga 2O3 schottky diode further includes a metal electrode including a schottky contact electrode and an ohmic contact electrode, the schottky contact electrode being in contact with the α -Ga 2O3 epitaxial drift layer; the ohmic contact electrode is in contact with any one of the epitaxial buffer layer, the alpha-Ga 2O3 epitaxial conductive layer and the substrate layer.
In an embodiment, the ohmic contact electrode is in contact with a region of the epitaxial buffer layer where the α -Ga 2O3 epitaxial conductive layer is not disposed; or the ohmic contact electrode is in contact with a region of the alpha-Ga 2O3 epitaxial conductive layer where the alpha-Ga 2O3 epitaxial drift layer is not arranged; or the ohmic contact electrode is in contact with a region of the epitaxial buffer layer where the alpha-Ga 2O3 epitaxial drift layer is not disposed.
In an embodiment, the substrate layer is selected from a sapphire single crystal substrate layer or a Si substrate layer.
In one embodiment, the thickness of the substrate layer is 100-600 μm.
In one embodiment, the thickness of the epitaxial buffer layer is 10-1000 nm.
In one embodiment, the carrier concentration of the α -Ga 2O3 epitaxial conductive layer is 1E 18-1E 20cm -3, and the thickness is 50-1000 nm.
In one embodiment, the carrier concentration of the α -Ga 2O3 epitaxial drift layer is 1E 15-5E 17cm -3, and the thickness is 0.8-50 μm.
In one embodiment, the metal electrode is selected from at least one of Au, al, ni, ti, cu, pt layers.
Specifically, the metal electrode may be selected from any one of the above metal layers, or may be selected from any two or more of the above metal layers to constitute a multilayer structure.
According to one embodiment of the present disclosure, there is at least the following advantageous effects:
The epitaxial buffer layer is introduced between the substrate layer and the alpha-Ga 2O3 epitaxial layer, the material of the epitaxial buffer layer is selected from at least one of Ni, ta and BN, and the epitaxial buffer layer is prepared by selecting the materials, because the materials have lattice constants which are more matched with alpha-Ga 2O3, so that the epitaxial lattice mismatch can be reduced to 1% or below (namely, the lattice mismatch between the substrate layer and the alpha-Ga 2O3 epitaxial layer is obviously reduced), and the epitaxial quality of alpha-Ga 2O3 can be effectively improved; on the other hand, the materials have higher heat conductivity (50-550W/m.K), so that the heat dissipation performance and the on-resistance of the diode device can be effectively improved, and the working stability of the device is improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the disclosure, nor is it intended to be used to limit the scope of the disclosure. Other features of the present disclosure will become apparent from the following specification.
Drawings
The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which:
in the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.
Fig. 1 shows a schematic structural diagram of an α -Ga 2O3 schottky diode 1 in embodiment 1 of the present disclosure;
Fig. 2 shows a schematic structural diagram of an α -Ga 2O3 schottky diode in examples 2, 3 of the present disclosure;
Fig. 3 shows a schematic structural diagram of an α -Ga 2O3 schottky diode 4 in example 4 of the present disclosure.
Reference numerals:
1-a substrate layer; 2-an epitaxial buffer layer; a 3-alpha-Ga 2O3 epitaxial conductive layer; 4-a-Ga 2O3 epitaxial drift layer; a 5-Schottky contact electrode; 6-ohmic contact electrode.
Detailed Description
In order to make the objects, features and advantages of the present disclosure more comprehensible, the technical solutions in the embodiments of the present disclosure will be clearly described in conjunction with the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are only some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
The prior art mainly adopts a sapphire (Al 2O3) substrate as a direct epitaxial substrate of an alpha-Ga 2O3 film, and the scheme faces two problems: (1) The lattice mismatch between Al 2O3 and alpha-Ga 2O3 is large (> 4%), so that the defect density of a growth interface is high, and the epitaxial quality of the alpha-Ga 2O3 film is limited; (2) The thermal conductivities of Al 2O3 and alpha-Ga 2O3 are relatively low (< 30W/mK), resulting in poor device thermal dissipation.
Based on the defects, the invention provides an alpha-Ga 2O3 Schottky diode, wherein an epitaxial buffer layer is introduced between a substrate layer and an alpha-Ga 2O3 epitaxial layer, so that lattice mismatch between the substrate layer and the alpha-Ga 2O3 epitaxial layer is reduced, and the epitaxial quality of the alpha-Ga 2O3 is effectively improved; and improves the heat dissipation performance of the diode device.
Specifically, the following examples are presented.
Example 1
This embodiment provides an α -Ga 2O3 schottky diode 1, the structure of which is shown in fig. 1.
The diode comprises an epitaxial structure and a metal electrode;
the epitaxial structure comprises a substrate layer 1, an epitaxial buffer layer 2, an alpha-Ga 2O3 epitaxial conductive layer 3 and an alpha-Ga 2O3 epitaxial drift layer 4 which are sequentially stacked from bottom to top; the alpha-Ga 2O3 epitaxial conductive layer 3 and the alpha-Ga 2O3 epitaxial drift layer 4 are arranged on a partial region of the epitaxial buffer layer 2;
The metal electrode comprises a Schottky contact electrode 5 and an ohmic contact electrode 6, and the Schottky contact electrode 5 is in contact with the alpha-Ga 2O3 epitaxial drift layer 4; the ohmic contact electrode 6 is in contact with a region of the epitaxial buffer layer 2 where the α -Ga 2O3 epitaxial conductive layer 3 is not disposed.
Specifically, the substrate layer 1 is a sapphire (0001) -oriented single crystal substrate having a thickness of about 500 μm; depositing a (111) -oriented Ni metal film as an epitaxial buffer layer 2 above the sapphire substrate, wherein the thickness of the Ni metal film is 500nm; depositing a patterned alpha-Ga 2O3 epitaxial conductive layer 3 with carrier concentration of 1E19cm -3 and thickness of 200nm on the epitaxial buffer layer 2; depositing an alpha-Ga 2O3 epitaxial drift layer 4 with a carrier concentration of 1E16cm -3 and a thickness of 10 mu m on the alpha-Ga 2O3 epitaxial conductive layer 3; depositing patterned Ni/Au on the alpha-Ga 2O3 epitaxial drift layer 4 to form a Schottky contact electrode 5; and depositing patterned Ni/Au on the area of the epitaxial buffer layer 2 where the alpha-Ga 2O3 epitaxial conductive layer 3 is not arranged to form an ohmic contact electrode 6.
Example 2
This embodiment provides an α -Ga 2O3 schottky diode 2, the structure of which is shown in fig. 2.
The diode comprises an epitaxial structure and a metal electrode;
the epitaxial structure comprises a substrate layer 1, an epitaxial buffer layer 2, an alpha-Ga 2O3 epitaxial conductive layer 3 and an alpha-Ga 2O3 epitaxial drift layer 4 which are sequentially stacked from bottom to top; the alpha-Ga 2O3 epitaxial drift layer 4 is arranged on a partial region of the alpha-Ga 2O3 epitaxial conductive layer 3;
the metal electrode comprises a Schottky contact electrode 5 and an ohmic contact electrode 6, and the Schottky contact electrode 5 is in contact with the alpha-Ga 2O3 epitaxial drift layer 4; the ohmic contact electrode 6 is in contact with a region of the a-Ga 2O3 epitaxial conductive layer 3 where the a-Ga 2O3 epitaxial drift layer 4 is not provided.
Specifically, the substrate layer 1 is a Si (001) substrate having a thickness of about 350 μm; depositing a (0001) -oriented BN film as an epitaxial buffer layer 2 over the Si substrate to a thickness of 50nm; depositing a patterned alpha-Ga 2O3 epitaxial conductive layer 3 with carrier concentration of 1E19cm -3 and thickness of 200nm on the epitaxial buffer layer 2; depositing an alpha-Ga 2O3 epitaxial drift layer 4 with a carrier concentration of 1E16cm -3 and a thickness of 10 mu m on the alpha-Ga 2O3 epitaxial conductive layer 3; depositing patterned Ni/Au on the alpha-Ga 2O3 epitaxial drift layer 4 to form a Schottky contact electrode 5; patterned Ti/Au is deposited on the α -Ga 2O3 epitaxial conductive layer 3 in the region where the α -Ga 2O3 epitaxial drift layer 4 is not located to form the ohmic contact electrode 6.
Example 3
This embodiment provides an α -Ga 2O3 schottky diode 3, the structure of which is shown in fig. 2.
The diode comprises an epitaxial structure and a metal electrode;
the epitaxial structure comprises a substrate layer 1, an epitaxial buffer layer 2, an alpha-Ga 2O3 epitaxial conductive layer 3 and an alpha-Ga 2O3 epitaxial drift layer 4 which are sequentially stacked from bottom to top; the alpha-Ga 2O3 epitaxial drift layer 4 is arranged on a partial region of the alpha-Ga 2O3 epitaxial conductive layer 3;
the metal electrode comprises a Schottky contact electrode 5 and an ohmic contact electrode 6, and the Schottky contact electrode 5 is in contact with the alpha-Ga 2O3 epitaxial drift layer 4; the ohmic contact electrode 6 is in contact with a region of the a-Ga 2O3 epitaxial conductive layer 3 where the a-Ga 2O3 epitaxial drift layer 4 is not provided.
Specifically, the substrate layer 1 is a sapphire (110) -oriented single crystal substrate having a thickness of about 500 μm; depositing (110) oriented Ta metal film as an epitaxial buffer layer 2 with the thickness of 50nm on the sapphire substrate; depositing a patterned alpha-Ga 2O3 epitaxial conductive layer 3 with carrier concentration of 1E19cm -3 and thickness of 200nm on the epitaxial buffer layer 2; depositing an alpha-Ga 2O3 epitaxial drift layer 4 with a carrier concentration of 1E16cm -3 and a thickness of 10 mu m on the alpha-Ga 2O3 epitaxial conductive layer 3; depositing patterned Ni/Au on the alpha-Ga 2O3 epitaxial drift layer 4 to form a Schottky contact electrode 5; patterned Ti/Au is deposited on the α -Ga 2O3 epitaxial conductive layer 3 in the region where the α -Ga 2O3 epitaxial drift layer 4 is not located to form the ohmic contact electrode 6.
Example 4
This embodiment provides an α -Ga 2O3 schottky diode 4, the structure of which is shown in fig. 3.
The diode comprises an epitaxial structure and a metal electrode;
The epitaxial structure comprises a substrate layer 1, an epitaxial buffer layer 2 and an alpha-Ga 2O3 epitaxial drift layer 4 which are sequentially stacked from bottom to top; the alpha-Ga 2O3 epitaxial drift layer 4 is arranged on a partial region of the epitaxial buffer layer 2;
The metal electrode comprises a Schottky contact electrode 5 and an ohmic contact electrode 6, and the Schottky contact electrode 5 is in contact with the alpha-Ga 2O3 epitaxial drift layer 4; the ohmic contact electrode 6 is in contact with a region of the epitaxial buffer layer 2 where the α -Ga 2O3 epitaxial drift layer 4 is not provided.
Specifically, the substrate layer 1 is a sapphire (0001) -oriented single crystal substrate having a thickness of about 500 μm; depositing a (111) -oriented Ni metal film as an epitaxial buffer layer 2 above the sapphire substrate, wherein the thickness of the Ni metal film is 500nm; depositing a patterned alpha-Ga 2O3 epitaxial drift layer 4 with a carrier concentration of 1E16cm -3 and a thickness of 10 mu m above the epitaxial buffer layer 2; depositing patterned Ni/Au on the alpha-Ga 2O3 epitaxial drift layer 4 to form a Schottky contact electrode 5; and depositing patterned Ni/Au on the area of the epitaxial buffer layer 2 where the alpha-Ga 2O3 epitaxial drift layer 4 is not arranged to form an ohmic contact electrode 6.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps recited in the present disclosure may be performed in parallel or sequentially or in a different order, provided that the desired results of the technical solutions of the present disclosure are achieved, and are not limited herein.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. An α -Ga 2O3 schottky diode, wherein the α -Ga 2O3 schottky diode comprises an epitaxial structure; the epitaxial structure comprises a substrate layer, an epitaxial buffer layer, an alpha-Ga 2O3 epitaxial conductive layer and an alpha-Ga 2O3 epitaxial drift layer which are sequentially stacked from bottom to top;
Or the epitaxial structure comprises a substrate layer, an epitaxial buffer layer and an alpha-Ga 2O3 epitaxial drift layer which are sequentially stacked from bottom to top;
And the material of the epitaxial buffer layer is at least one selected from Ni, ta and BN.
2. The α -Ga 2O3 schottky diode of claim 1 wherein in the epitaxial structure, the α -Ga 2O3 epitaxial conductive layer and the α -Ga 2O3 epitaxial drift layer are disposed on a partial region of the epitaxial buffer layer; or the alpha-Ga 2O3 epitaxial drift layer is arranged on a partial region of the alpha-Ga 2O3 epitaxial conductive layer; or the alpha-Ga 2O3 epitaxial drift layer is arranged on a partial region of the epitaxial buffer layer.
3. The α -Ga 2O3 schottky diode of claim 2 further comprising a metal electrode comprising a schottky contact electrode and an ohmic contact electrode, the schottky contact electrode in contact with the α -Ga 2O3 epitaxial drift layer; the ohmic contact electrode is in contact with any one of the epitaxial buffer layer, the alpha-Ga 2O3 epitaxial conductive layer and the substrate layer.
4. The α -Ga 2O3 schottky diode of claim 3 wherein the ohmic contact electrode is in contact with a region of the epitaxial buffer layer where the α -Ga 2O3 epitaxial conductive layer is not disposed; or the ohmic contact electrode is in contact with a region of the alpha-Ga 2O3 epitaxial conductive layer where the alpha-Ga 2O3 epitaxial drift layer is not arranged; or the ohmic contact electrode is in contact with a region of the epitaxial buffer layer where the alpha-Ga 2O3 epitaxial drift layer is not disposed.
5. The α -Ga 2O3 schottky diode of claim 1, wherein the substrate layer is selected from a sapphire single crystal substrate layer or a Si substrate layer.
6. The α -Ga 2O3 schottky diode of claim 1 wherein the substrate layer has a thickness of 100-600 μm.
7. The α -Ga 2O3 schottky diode of claim 1, wherein the epitaxial buffer layer has a thickness of 10-1000 nm.
8. The α -Ga 2O3 schottky diode of claim 1, wherein the α -Ga 2O3 epitaxial conductive layer has a carrier concentration of 1e 18-1 e20cm -3 and a thickness of 50-1000 nm.
9. The α -Ga 2O3 schottky diode of claim 1, wherein the α -Ga 2O3 epitaxial drift layer has a carrier concentration of 1e 15-5 e17cm -3 and a thickness of 0.8-50 μm.
10. The α -Ga 2O3 schottky diode of claim 3 wherein the metal electrode is selected from at least one of Au, al, ni, ti, cu, pt layers.
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