CN117998979A - Solar blind ultraviolet photoelectric memristor and preparation method thereof - Google Patents
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Abstract
The invention discloses a solar blind ultraviolet photoelectric memristor and a preparation method thereof; the solar blind ultraviolet photoelectric memristor comprises: the solar blind ultraviolet light response resistive switching device comprises a substrate, a transition layer, a bottom electrode, a solar blind ultraviolet light response resistive switching layer and a top electrode; the transition layer is arranged between the substrate and the bottom electrode and is used for enhancing the adhesiveness between the bottom electrode and the substrate; the solar blind ultraviolet light response resistance change layer is arranged on the bottom electrode, and has optical response to solar blind ultraviolet light with the wavelength of 200-280 nm; the top electrode is uniformly arranged on the solar blind ultraviolet light response resistance change layer. Under the action of preset electric excitation and/or solar blind ultraviolet excitation, the high-low resistance state transition of the solar blind ultraviolet photoelectric memristor can be realized.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to a solar blind ultraviolet photoelectric memristor device and a preparation method thereof.
Background
The computing power is one of three key elements of artificial intelligence, and is the core basic capability of the digital economy era. In recent years, the demand for artificial intelligence for computational power has grown rapidly, but in the conventional von neumann computer architecture, the problems of power consumption and scalability are faced, and the challenges of limited computational speed caused by the separate von neumann architecture exist. At the same time, as moore's law fails, scaling down to ensure integration of increased numbers of memory cells is hampered by manufacturing complexity and photolithographic techniques.
Memristors are novel nonvolatile storage concepts based on dielectric material electro-resistance effect. The basic working mechanism is to realize storage by utilizing the conversion of the resistance change functional layer between a high resistance state and a low resistance state. The emerging memristor has the characteristics of small volume, simple structure, non-volatility, high integration density, low power consumption and the like. Meanwhile, the calculation result of the memristor can be calculated and stored in situ, and a data movement process is not needed, so that the von Neumann bottleneck is avoided, and the memristor is considered as the most promising candidate for constructing the next-generation computer architecture and realizing the neuromorphic calculation.
In opto-electric memristors, devices may be co-modulated by optical and electrical signals, with less cross-talk, lower power consumption, and higher bandwidth than conventional memristor devices modulated only by electrical signals. The application range of the memristor can be expanded to various optoelectronic applications such as optoelectronic memory, optoelectronic logic operation, visual information sensor, optogenetic synapse and the like by utilizing the optical signal.
However, most of the conventional photoelectric memristors use visible light, infrared light or ultraviolet light as an optical signal source, which makes it difficult to avoid noise influence of solar background light on the photoelectric memristors.
Disclosure of Invention
The invention aims to provide a solar blind ultraviolet photoelectric memristor and a preparation method thereof, which are used for solving the problem that the current photoelectric memristor is easily affected by solar background light noise.
In order to achieve the technical purpose, the invention adopts the following technical scheme:
Under the action of preset electric excitation and/or solar blind ultraviolet excitation, the solar blind ultraviolet photoelectric memristor realizes high and low resistance state transition;
the solar blind ultraviolet photoelectric memristor comprises: the solar blind ultraviolet light response resistive switching device comprises a substrate, a transition layer, a bottom electrode, a solar blind ultraviolet light response resistive switching layer and a top electrode;
The transition layer is arranged between the substrate and the bottom electrode and is used for enhancing the adhesiveness between the bottom electrode and the substrate;
the solar blind ultraviolet light response resistance change layer is arranged on the bottom electrode, and has optical response to solar blind ultraviolet light with the wavelength of 200-280 nm;
the top electrode is uniformly arranged on the solar blind ultraviolet light response resistance change layer.
As a possible implementation manner, further, the substrate is a silicon substrate or a sapphire substrate; the transition layer is made of titanium; the bottom electrode is an inert electrode with the thickness of 30-50nm; the inert electrode is a platinum electrode;
As a possible implementation manner, further, the solar blind ultraviolet light response resistive switching layer is a double-layer oxide film, one layer close to the top electrode is used for accumulating enough migration ions, and the other layer is used as a resistive switching layer and used for promoting the stable and orderly migration of ions to form conductive filaments.
As a possible implementation mode, further, one layer of the double-layer oxide film close to the top electrode is an oxygen-deficient samarium oxide film grown in pure argon atmosphere, and the thickness of the oxygen-deficient samarium oxide film is 30-40nm;
The other layer is an oxygen-enriched samarium oxide film grown in an argon and oxygen composite atmosphere, the thickness is 65-75nm, and the oxygen-enriched samarium oxide film is arranged on the bottom electrode.
As a possible implementation manner, the top electrode is an active metal electrode, and has a thickness of 50-55nm, and is used for generating migration ions so as to promote the formation of a conductive filament channel and reduce the starting and resetting voltages, and simultaneously is used as an incident window layer of solar blind light; silver electrodes are selected as the active metal electrodes.
The invention also provides a preparation method of the solar blind ultraviolet photoelectric memristor, which comprises the following steps:
1) Growing a transition layer of titanium on a substrate;
2) Growing an inert metal platinum electrode on the transition layer;
3) Growing an oxygen-enriched samarium oxide film on the inert electrode;
4) Growing an oxygen-deficient samarium oxide film on the oxygen-enriched samarium oxide film;
5) Growing an active metal silver electrode on the oxygen-deficient samarium oxide film to obtain the solar blind ultraviolet photoelectric memristor; the growth modes all adopt the magnetron sputtering technology.
As a possible trial mode, further, step 1) specifically includes the steps of:
Mounting a titanium target on a magnetron target position, and placing a silicon substrate subjected to cleaning and drying pretreatment on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 1Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 5min to obtain the transition layer titanium.
According to one embodiment of the invention, the substrate is subjected to pretreatment, which comprises the following specific steps: the silicon substrate is soaked in acetone, alcohol and deionized water in sequence, and is cleaned for 15min by ultrasonic equipment, one round is 45min in total, three rounds are repeated to fully remove stains on the surface of the substrate, and the substrate is heated, dried and stored for standby.
As a possible trial mode, further, step 2) specifically includes the steps of:
mounting a platinum target on a magnetron target position, and placing the silicon substrate growing the titanium transition layer in the step 1) on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 2Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 5min to obtain the inert metal platinum electrode.
As a possible trial mode, further, the steps 3) and 4) specifically include the following steps:
Mounting a samarium oxide target on a magnetron target position, and placing the silicon substrate of the growth bottom electrode and the transition layer in the step 2) on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Cutting the tinfoil into a proper size, tightly adhering the tinfoil to the surface of a part of bottom electrode, and adhering the edge of the tinfoil to a substrate tray by using an adhesive tape. Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon and oxygen into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 2Pa, sputtering at 110W for 10min, opening a baffle plate, and sputtering for 10min to obtain an oxygen-enriched samarium oxide film;
And after the sputtering time is up, the baffle is quickly closed, the film sputtering is stopped, and meanwhile, the feeding of argon and oxygen gas is stopped, and the film is waited for 20min. And (3) introducing argon into the sputtering bin at the flow of 20sccm again after 20min, regulating a high valve to keep the internal air pressure at 2Pa, sputtering power at 110W, pre-sputtering for 10min, opening a baffle plate, and sputtering for 10min to obtain the anoxic samarium oxide film.
As a possible implementation manner, further, the step 5) specifically includes the following steps:
mounting a silver target on a magnetic control target position, placing a mask plate on the oxygen-deficient samarium oxide film grown in the step 4), and then placing a substrate on a substrate tray in a magnetic control sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 1Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 3min to obtain an active metal silver electrode;
Round holes with the diameter of 500 mu m are uniformly distributed on the mask plate.
The steps 1) to 5) in the preparation method provided by the invention are all operated at room temperature.
Since ozone in the atmospheric stratosphere has a strong absorption effect on solar blind ultraviolet light with a wave band of 200-280nm, sunlight in the wave band hardly exists in the near-earth atmosphere. The solar blind ultraviolet light response resistance variable layer in the solar blind ultraviolet light memristor has light response to solar blind ultraviolet light with the wavelength of 200-280nm, so that the problem that the light signal response of most of the solar blind ultraviolet light memristor is easily influenced by solar background light noise in the current stage is solved.
The preparation method provided by the invention is simple and easy to operate, and the prepared solar blind ultraviolet photoelectric memristor has good resistance change characteristics, stable transition of high and low resistance states, lower switching voltage, good stability characteristics and a larger resistance change window through performance detection.
When the solar blind ultraviolet photoelectric memristor provided by the invention is applied with preset forward electric excitation, a large number of oxygen vacancy defects exist in the first layer oxide film (the oxygen-deficient samarium oxide film), so that silver ions formed by oxidation of the top electrode are scattered and accumulated in the first layer oxide film (the oxygen-deficient samarium oxide film). However, as the concentration of oxygen molecules of the second layer oxide film (oxygen-enriched samarium oxide film) is higher during growth, oxygen vacancy defects in the film are filled, the film is more compact, so that the migration path of silver ions in the second layer oxide film is more stable, and when the silver ions migrate to the bottom electrode, the solar blind ultraviolet photoelectric memristor device is converted from a high resistance state to a low resistance state. On the contrary, when the solar blind ultraviolet photoelectric memristor device is applied with preset negative electric excitation, silver ions in the second layer of oxide film gradually migrate back to the first layer of oxide film under the action of an electric field, and the conductive filament channels are broken, so that the resistance is increased, and the device is restored to a high-resistance state.
Under the action of preset electric excitation, the solar blind ultraviolet photoelectric memristor provided by the invention causes silver ions on the surface of the active metal silver electrode to migrate to the oxide film, and the conductive filament path formed by the migration of the silver ions is more stable due to the introduction of the double-layer oxide film.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a solar blind ultraviolet photoelectric memristor provided in embodiment 1 of the present invention.
Fig. 2 is a physical diagram of a solar blind ultraviolet photoelectric memristor provided in embodiment 1 of the present invention.
Fig. 3 is a cross-sectional SEM image of the solar blind uv-light memristor device provided in embodiment 1 of the present invention.
FIG. 4 is an absorption spectrum of the solar blind UV-responsive resistive switching layer in example 1.
FIG. 5 is a memristive I-V test curve measured by the solar blind UV-light photo-resistive memristive device in example 1.
FIG. 6 is a cycle I-T test curve of the solar blind UV memristor device in example 1 measured under electrical pulse excitation of 0.2V/5s and-0.5V/5 s.
FIG. 7 is a graph showing the I-T test curve of the solar blind UV memristor device in example 1 under the irradiation of a solar blind UV pulse with a wavelength of 255 nm.
FIG. 8 is a memristive I-V test curve measured for the solar blind UV-light photo-resistive memristive device in comparative example 1.
The reference designations in the figures are as follows:
1. A substrate; 2. a transition layer; 3. a bottom electrode; 4. a solar blind ultraviolet light response resistance change layer; 5. a top electrode; 41. oxygen-enriched samarium oxide film; 42. an oxygen deficient samarium oxide film.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is specifically noted that the following examples are only for illustrating the present invention, but do not limit the scope of the present invention. Likewise, the following examples are only some, but not all, of the examples of the present invention, and all other examples, which a person of ordinary skill in the art would obtain without making any inventive effort, are within the scope of the present invention.
The invention provides a solar blind ultraviolet photoelectric memristor device, which realizes high and low resistance state transition of the solar blind ultraviolet photoelectric memristor device under the action of preset electric excitation and/or solar blind ultraviolet excitation;
The solar blind ultraviolet photoelectric memristor comprises: the solar blind ultraviolet light response resistive switching device comprises a substrate 1, a transition layer 2, a bottom electrode 3, a solar blind ultraviolet light response resistive switching layer 4 and a top electrode 5; the transition layer 2 is arranged between the substrate 1 and the bottom electrode 3 and is used for enhancing the adhesiveness between the bottom electrode 3 and the substrate 1; the solar blind ultraviolet light response resistance change layer 4 is arranged on the bottom electrode, and has light response to solar blind ultraviolet light with the wavelength of 200-280 nm; and the top electrode 5 is uniformly arranged on the solar blind ultraviolet light response resistance change layer.
Wherein the substrate is a silicon substrate or a sapphire substrate; the transition layer is made of titanium; the bottom electrode is an inert electrode with the thickness of 30-50nm; the inert electrode is a platinum electrode;
The solar blind ultraviolet light response resistance change layer is a double-layer oxide film, wherein one layer of the double-layer oxide film close to the top electrode is an oxygen-deficient samarium oxide film grown in pure argon atmosphere, and the thickness of the oxygen-deficient samarium oxide film is 30-40nm; the other layer is an oxygen-enriched samarium oxide film grown in an argon and oxygen composite atmosphere, the thickness is 65-75nm, and the oxygen-enriched samarium oxide film is arranged on the bottom electrode.
The top electrode is an active metal electrode with the thickness of 50-55nm and is used for generating migration ions so as to promote the formation of a conductive filament channel and reduce the starting and resetting voltages, and is used as an incident window layer of solar blind light; silver electrode is selected as active metal electrode.
The invention also provides a preparation method of the solar blind ultraviolet photoelectric memristor, which comprises the following steps:
1) Growing a transition layer of titanium on a substrate;
2) Growing an inert metal platinum electrode on the transition layer;
3) Growing an oxygen-enriched samarium oxide film on the inert electrode;
4) Growing an oxygen-deficient samarium oxide film on the oxygen-enriched samarium oxide film;
5) Growing an active metal silver electrode on the oxygen-deficient samarium oxide film to obtain the solar blind ultraviolet photoelectric memristor; wherein, the growing modes of the steps 1) to 5) all adopt the magnetron sputtering technology and are all operated at room temperature.
Example 1
Referring to fig. 1, the embodiment provides a solar blind ultraviolet photoelectric memristor device, which sequentially comprises an active metal silver electrode, an oxygen-deficient samarium oxide film, an oxygen-enriched samarium oxide film, a titanium transition layer, an inert metal platinum electrode and a silicon substrate from top to bottom. Under the action of preset electric excitation and/or solar blind ultraviolet excitation, the high-low resistance state transition of the solar blind ultraviolet photoelectric memristor can be realized.
The solar blind ultraviolet photoelectric memristor in the embodiment is prepared by adopting the following method:
(1) The silicon substrate is soaked in acetone, alcohol and deionized water in sequence, and is cleaned for 15min by ultrasonic equipment, one round is 45min in total, three rounds are repeated to fully remove stains on the surface of the substrate, and the substrate is heated, dried and stored for standby.
(2) And (3) correctly mounting the titanium target on the magnetron target position, and stably placing the silicon substrate obtained in the step (1) on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate and no foreign matters exist. Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 1Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 5min to obtain the titanium transition layer.
(3) And (3) correctly mounting the platinum target on the magnetron target position, and stably placing the silicon substrate growing the titanium transition layer in the step (2) on a substrate tray in the magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate and no foreign matters exist. Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 2Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 5min to obtain the inert metal platinum electrode.
(4) And (3) accurately mounting the samarium oxide target on the magnetron target position, and stably placing the silicon substrate with the platinum electrode and the titanium transition layer grown in the step (3) on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate and no foreign matters exist. Cutting the tinfoil into a proper size, tightly adhering the tinfoil to the surface of a part of bottom electrode, and adhering the edge of the tinfoil to a substrate tray by using an adhesive tape. Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon and oxygen into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 2Pa, sputtering at 110W for 10min, opening a baffle plate, and sputtering for 10min to obtain a second layer of oxide film (oxygen-enriched samarium oxide film); and after the sputtering time is up, the baffle is quickly closed, the film sputtering is stopped, and meanwhile, the feeding of argon and oxygen gas is stopped, and the film is waited for 20min. Argon is again introduced into the sputtering chamber at a flow rate of 20sccm after 20min. And similarly, regulating a high valve to keep the internal air pressure at 2Pa, sputtering power at 110W, pre-sputtering for 10min, opening a baffle plate, and sputtering for 10min to obtain a first layer of oxide film (oxygen-deficient samarium oxide film).
(5) And (3) accurately mounting a silver target on the magnetron target, placing a mask plate with round holes with the diameter of 500 mu m on the oxide film obtained in the step (4), and stably placing the substrate on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate and no foreign matters exist. Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 1Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 3min to obtain the active metal silver electrode.
The steps (1) - (5) in the preparation method provided by the invention are all operated at room temperature.
Comparative example 1
A solar blind uv-light memristor device was fabricated in the same manner as in example 1. Comparative example 1 differs from example 1 in that: in this comparative example, an inert metal platinum electrode was used instead of an active metal silver electrode.
Performance test of solar blind uv-light memristor devices described in example 1 and comparative example 1:
Memristive I-V testing was performed on the devices using a gemini 2612B source table. Before testing, the device is placed on a probe station, a knob is adjusted, and two probes are respectively placed on a top electrode and a bottom electrode of the tested device. During testing, the scanning voltage is gradually increased from 0V to the maximum positive voltage, then returns to 0V, gradually decreases to negative voltage, finally returns to 0V, and one scanning is completed.
A physical view and a cross-sectional SEM view of the device of example 1 are shown in fig. 2 and 3. The absorption spectrum of the solar blind ultraviolet light response resistive switching layer in the embodiment 1 is shown in fig. 4, and as can be seen from fig. 4, the solar blind ultraviolet light response resistive switching layer in the embodiment 1 has remarkable light absorption to solar blind ultraviolet light with the wavelength of 200-280nm, and weak light absorption to light with the wavelength of 280-800 nm, which indicates that the optical signal response of the device in the embodiment 1 is not easily affected by solar background noise, and has a certain anti-interference capability. The device test in example 1 had a positive scan voltage range of 0 to 1V, a negative scan voltage range of 0 to-1V, and a scan step of 0.01V. The memristive I-V test curve for the device of example 1 is shown in fig. 5. As can be seen from FIG. 5, the solar blind ultraviolet photoelectric memristor device prepared in embodiment 1 of the present invention has an on voltage of about 0.19V, a reset voltage of about-0.73V, and a resistance change window of about two orders of magnitude, which indicates that the device has smaller and stable on and reset voltages.
The cycle I-T test curves for the device of example 1, as measured by the excitation of electrical pulses at 0.2V/5s and-0.5V/5 s, are shown in FIG. 6, with a read voltage of 0.02V. As can be seen from FIG. 6, the solar blind ultraviolet photoelectric memristor device prepared in the embodiment 1 of the present invention can keep stable changes of high and low resistance states of the device under repeated excitation of electric pulses of 0.2V/5s and-0.5V/5 s, which is equivalent to logic "0" and logic "1" in the memory, and indicates that the device has good stability.
The I-T test curve of the device of example 1 under the sun blind ultraviolet light pulse with 255nm wavelength and 5s pulse width is shown in FIG. 7, and the read voltage is 0.02V. As can be seen from FIG. 7, the solar blind ultraviolet photoelectric memristor device prepared in the embodiment 1 of the present invention shows a certain light response under 255nm solar blind ultraviolet pulse excitation, which indicates that the resistance of the device changes under solar blind ultraviolet irradiation.
The device of comparative example 1 had a positive scan voltage range of 0 to 10V, a negative scan voltage range of 0 to-10V, and a scan step of 0.1V. The memristive I-V test curve for the device of comparative example 1 is shown in fig. 8. As can be seen from FIG. 8, the solar blind ultraviolet photoelectric memristor device prepared in comparative example 1 of the present invention has a turn-on voltage of about 3.4V and a reset voltage of about-8.4V. Example 1 has extremely small on voltage and reset voltage compared to comparative example 1. This is consistent with the predictions of using silver ions generated by active metallic silver electrodes under the influence of an electric field to promote the formation of conductive filament channels and reduce the turn-on and reset voltages.
The foregoing description is only a partial embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent devices or equivalent processes using the descriptions and the drawings of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the present invention.
Claims (10)
1. The solar blind ultraviolet photoelectric memristor is characterized in that under the action of preset electric excitation and/or solar blind ultraviolet excitation, the high-resistance state and the low-resistance state of the solar blind ultraviolet photoelectric memristor are changed;
The solar blind ultraviolet photoelectric memristor comprises: the solar blind ultraviolet light response resistive switching device comprises a substrate (1), a transition layer (2), a bottom electrode (3), a solar blind ultraviolet light response resistive switching layer (4) and a top electrode (5);
The transition layer (2) is arranged between the substrate (1) and the bottom electrode (3) and is used for enhancing the adhesiveness between the bottom electrode (3) and the substrate (1);
the solar blind ultraviolet light response resistance change layer (4) is arranged on the bottom electrode (3), and the solar blind ultraviolet light response resistance change layer (4) has light response to solar blind ultraviolet light with the wavelength of 200-280 nm;
the top electrode (5) is uniformly arranged on the solar blind ultraviolet light response resistance change layer (4).
2. The solar blind ultraviolet photoelectric memristor device according to claim 1, wherein the substrate (1) is a silicon substrate or a sapphire substrate; the transition layer (2) is made of titanium; the bottom electrode (3) is an inert electrode with the thickness of 30-50nm; the inert electrode is a platinum electrode.
3. The solar blind ultraviolet photoelectric memristor device according to claim 1, wherein the solar blind ultraviolet light response resistive layer (4) is a double-layer oxide film, one layer close to the top electrode (5) is used for accumulating enough migration ions, and the other layer is used as a resistive layer for promoting stable and orderly migration of ions to form conductive filaments.
4. The solar blind ultraviolet photoelectric memristor device according to claim 1, wherein one layer of the double-layer oxide film close to the top electrode (5) is an oxygen-deficient samarium oxide film (42) grown in pure argon atmosphere, and the thickness is 30-40nm;
The other layer is an oxygen-enriched samarium oxide film (41) grown in the argon and oxygen combined atmosphere, the thickness is 65-75nm, and the oxygen-enriched samarium oxide film is arranged on the bottom electrode (3).
5. The solar blind ultraviolet photoelectric memristor device according to claim 1, wherein the top electrode (5) is an active metal electrode with a thickness of 50-55nm, and is used for generating migration ions so as to promote the formation of a conductive filament channel and reduce the turn-on and reset voltages, and is used as an incident window layer of solar blind light; silver electrodes are selected as the active metal electrodes.
6. The preparation method of the solar blind ultraviolet photoelectric memristor is characterized by comprising the following steps of:
1) Growing a transition layer of titanium on a substrate;
2) Growing an inert metal platinum electrode on the transition layer;
3) Growing an oxygen-enriched samarium oxide film on the inert electrode;
4) Growing an oxygen-deficient samarium oxide film on the oxygen-enriched samarium oxide film;
5) Growing an active metal silver electrode on the oxygen-deficient samarium oxide film to obtain the solar blind ultraviolet photoelectric memristor; the growth modes all adopt the magnetron sputtering technology.
7. The method for manufacturing a solar blind ultraviolet photoelectric memristor device according to claim 6, wherein the step 1) specifically comprises the following steps:
Mounting a titanium target on a magnetron target position, and placing a silicon substrate subjected to cleaning and drying pretreatment on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 1Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 5min to obtain the transition layer titanium.
8. The method for manufacturing a solar blind ultraviolet photoelectric memristor device according to claim 6, wherein the step 2) specifically comprises the following steps:
mounting a platinum target on a magnetron target position, and placing the silicon substrate growing the titanium transition layer in the step 1) on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 2Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 5min to obtain the inert metal platinum electrode.
9. The method for manufacturing a solar blind ultraviolet photoelectric memristor according to claim 6, wherein the steps 3) and 4) specifically include the following steps:
Mounting a samarium oxide target on a magnetron target position, and placing the silicon substrate of the growth bottom electrode and the transition layer in the step 2) on a substrate tray in a magnetron sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Cutting the tinfoil into a proper size, tightly adhering the tinfoil to the surface of a part of bottom electrode, and adhering the edge of the tinfoil to a substrate tray by using an adhesive tape. Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon and oxygen into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 2Pa, sputtering at 110W for 10min, opening a baffle plate, and sputtering for 10min to obtain an oxygen-enriched samarium oxide film;
And after the sputtering time is up, the baffle is quickly closed, the film sputtering is stopped, and meanwhile, the feeding of argon and oxygen gas is stopped, and the film is waited for 20min. And (3) introducing argon into the sputtering bin at the flow of 20sccm again after 20min, regulating a high valve to keep the internal air pressure at 2Pa, sputtering power at 110W, pre-sputtering for 10min, opening a baffle plate, and sputtering for 10min to obtain the anoxic samarium oxide film.
10. The method for manufacturing a solar blind ultraviolet photoelectric memristor device according to claim 6, wherein the step 5) specifically comprises the following steps:
mounting a silver target on a magnetic control target position, placing a mask plate on the oxygen-deficient samarium oxide film grown in the step 4), and then placing a substrate on a substrate tray in a magnetic control sputtering bin to ensure that the substrate is completely attached to the bottom of the substrate without foreign matters;
Pumping the air pressure in the sputtering bin to 5X 10 -4 Pa, filling argon into the sputtering bin at a flow of 20sccm, adjusting a high valve to keep the internal air pressure at 1Pa, sputtering at 70W, pre-sputtering for 5min, opening a baffle plate, and sputtering for 3min to obtain an active metal silver electrode;
Round holes with the diameter of 500 mu m are uniformly distributed on the mask plate.
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