CN117969891A - Probe structure for photovoltage scanning probe microscope and scanning probe microscope - Google Patents
Probe structure for photovoltage scanning probe microscope and scanning probe microscope Download PDFInfo
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Abstract
The invention provides a probe structure for a photovoltage scanning probe microscope and the photovoltage scanning probe microscope with the probe structure, wherein the probe structure comprises: the cantilever comprises a main arm part, a probe part positioned at one end of the main arm part and a connecting part positioned at the other end of the main arm part and used for connection; a scanning probe provided on the probe section; and the illumination part is arranged on the main arm part and is closer to the probe part relative to the connecting part, the scanning probe and the illumination part are positioned on the same side of the cantilever, and the illumination part is used for emitting light to the scanning area when the scanning probe operates on the sample in the scanning area. The probe structure integrates excitation light and a scanning probe, and the probe scanning area is an emergent light area, so that the scanning probe electron microscope can realize the measurement of photoelectric properties under ultra-high space-time resolution.
Description
Technical Field
The present invention relates to a scanning probe microscope, and more particularly, to a probe structure for a photovoltage scanning probe microscope, and a photovoltage scanning probe microscope.
Background
The scanning probe electron microscope can realize the measurement of physical properties such as morphology, electricity, mechanics, magnetism, heat and the like of materials under ultra-high spatial resolution, and plays an important role in acquiring physical parameters of microscopic dimensions of the materials.
The Kelvin probe microscope (Kelvin Probe Force Microscopy, KPFM) is an electrical measurement technology based on atomic force microscope technology, can measure the contact potential difference between the surface of a sample and a needle tip so as to analyze the characteristics of charge density, electric field distribution and the like of the surface of a material, and has wide application in the fields of material science, electronic device preparation, nanoelectronics and the like.
Kelvin probe microscopy works on the principle that by applying an external bias to the tip or sample, the probe and sample form a capacitance between them by electrical conduction. In the process of simple harmonic vibration of the probe, the difference value of work functions between the needle tip and the sample material can be calculated by finding out the corresponding compensation voltage when the amplitude of the contact potential difference item under the corresponding frequency is equal to zero. If there is a charge distribution on the sample surface, a potential difference different from that of the starting material and the tip is formed. By measuring and comparing the electrical responses at different areas, information such as the surface potential and charge distribution of the sample can be obtained.
If light with a certain wavelength is introduced into a needle point scanning area, so that carriers in a sample are excited, and the probe scanning obtains electric potentials of different areas, the dynamic processes of carrier generation, recombination and the like can be studied, and the microscope, namely the light-assisted Kelvin scanning probe microscope, can be applied to the research in the fields of solar cells, organic photoelectric conversion devices and the like, and can be used for measuring specific physical parameters such as carrier transportation, defect distribution and the like.
Fig. 1 is a schematic diagram of a conventional electro-optical multifunctional probe system, referring to fig. 1, in which an optical lens unit 1, a four-quadrant detector 2, a laser emission unit 3, and a beam splitter 4 are included. In the optical lens unit 1, excitation light generated by the xenon lamp 12 and the monochromator 13 is aligned by the optical fiber 11 through the collimator lens 14 and focused on the surface of the sample 5 by the objective lens 15. However, since the diameter of the spot size focused on the sample 5 is larger than 10 μm, it is difficult for the probe 6 to rapidly scan and cover the area (i.e. the area where the spot is located), so that the obtained photoelectric potential V dc is often an average process of the carriers in a larger range after diffusion or recombination, and the transient response of the generation and diffusion gradient of the carriers cannot be accurately captured, so that the measurement of the photoelectric property under the ultra-high space-time resolution cannot be realized.
Disclosure of Invention
In view of the defects existing in the prior art, the invention provides a probe structure for a photovoltage scanning probe microscope and the photovoltage scanning probe microscope, so as to solve the problem that the existing scanning probe electron microscope cannot realize measurement of photoelectric properties under ultra-high space-time resolution.
In order to solve the above problems, the present invention first provides a probe structure of an optical voltage scanning probe microscope, the probe structure comprising: the cantilever comprises a main arm part, a probe part positioned at one end of the main arm part and a connecting part positioned at the other end of the main arm part and used for connection; a scanning probe provided on the probe section; and the illumination part is arranged on the main arm part and is closer to the probe part relative to the connecting part, the scanning probe and the illumination part are positioned on the same side of the cantilever, and the illumination part is used for emitting light to the scanning area when the scanning probe operates on the sample in the scanning area.
Further, the illumination section includes: a support body formed by the main arm portion protruding; and the micron-sized semiconductor light-emitting unit array is arranged on the surface of the support body facing the scanning probe.
Further, the support body is in a triangular prism shape, the cross section of the support body is in an isosceles triangle shape, and the cross section of the micron-sized semiconductor light emitting unit array is in a square shape.
Further, the scanning probe is cone-shaped, and the cross section of the scanning probe is isosceles triangle.
Further, the height of the support is smaller than the height of the scanning probe.
Further, the probe structure satisfies the following I-IV equation:
I：δ>-(lpcosα+hmsinα)tanγ-lpsinα+hmcosα。
II：2wmsinα＜dp＜2htanα。
III：
①＝[-δcosβ+hm cos(α+β)+hcosβcot(α+β+θ)
-wm cos(α+β)cot(α+β+θ)+hsinβ+δcot(α+β+θ)sinβ
-wm sin(α+β)-hm cot(α+β+θ)sin(α+β)-hcosβtanγ
+h cot(α+β+θ)sinβtanγ]/[cos(α+β)cot(α+β+θ)+sin(α+β)]②＝[-δcosβ+hmcos(α+β)+hcosβ cot(α+β-θ)+hsinβ+δcot(α+β-θ)sinβ-hm cot(α+β-θ)sin(α+β)-hcosβtanγ
+h cot(α+β-θ)sinβtanγ]/[cos(α+β)cot(α+β-θ)+sin(α+β)]
①＜lp＜②。
IV：hcosβ+(htanγ+δ)sinβ-lpcoS(α+β)-hm sin(α+β)-wm cos(α+β)>0。
in the above-mentioned I-IV term, the parameter h m represents the height of the micro-scale semiconductor light emitting unit array, w m represents the width of the micro-scale semiconductor light emitting unit array, θ represents the divergence angle of the emitted light, γ represents the half cone angle of the scanning probe tip, h represents the height of the scanning probe tip, β represents the inclination angle of the scanning probe to the sample surface during scanning, d m represents the width of the support, α represents the half cone angle of the support, δ represents the distance between the support and the scanning probe, and l p represents the distance from the micro-scale semiconductor light emitting unit array to the cantilever.
Further, the cantilever, the scanning probe and the support body are covered with a conductive layer, and the micro light emitting diode is electrically insulated from the conductive layer.
Further, the cantilever is formed with a first insulating layer, a first electrode layer, a second insulating layer, and a second electrode layer sequentially covered on the conductive layer on one side of the support body, a portion of the first electrode layer, a portion of the second insulating layer, and a portion of the second electrode layer on the surface of the support body facing the scanning probe are removed to expose the first insulating layer, the micro-sized semiconductor light emitting cell array is connected to the exposed first insulating layer, and the positive electrode of the micro-sized semiconductor light emitting cell array is electrically connected to the first electrode layer, and the negative electrode of the micro-sized semiconductor light emitting cell array is electrically connected to the second electrode layer.
Further, the cantilever, the scanning probe, and the support are integrally made of silicon.
The invention also provides a photovoltage scanning probe microscope which comprises the probe structure.
The probe structure for the photovoltage scanning probe microscope comprises the cantilever, the scanning probe and the illumination part, wherein the scanning probe and the illumination part are arranged on the cantilever, so that the illumination part can emit light to a scanning area when the scanning probe operates a sample in the scanning area. That is, the scanning area of the scanning probe is also the light emitting area of the illumination part, so that the scanning probe can rapidly scan in the light emitting area, and an accurate photoelectric potential V dc can be obtained, so that the transient response of the generation and diffusion gradient of the carrier is accurately captured, and the measurement of the photoelectric property under the ultra-high space-time resolution is realized.
Drawings
FIG. 1 is a schematic diagram of a conventional electro-optical multifunctional probe system;
FIG. 2 is a dimensional view of a probe structure provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a probe structure according to an embodiment of the present invention;
Fig. 4 is a schematic diagram of a probe structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are merely exemplary and the invention is not limited to these embodiments.
It should be noted here that, in order to avoid obscuring the present invention due to unnecessary details, only structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, while other details not greatly related to the present invention are omitted.
The following describes specific embodiments of the present invention with reference to the drawings.
Fig. 3 is a schematic diagram of a probe structure according to an embodiment of the present invention, referring to fig. 3, the probe structure includes: cantilever 61, scanning probe 62 and illumination section 63.
The cantilever 61 includes a main arm portion 610, a probe portion 611 at one end of the main arm portion 610, and a connection portion 612 at the other end of the main arm portion 610 for connection. The scanning probe 62 is provided on the probe portion 611.
The illumination portion 63 is disposed on the main arm portion 610 and is closer to the probe portion 611 than the connection portion 612, the scanning probe 62 and the illumination portion 63 are located on the same side of the cantilever 61, and the illumination portion 63 is configured to emit light to a scanning area when the scanning probe 62 operates on a sample in the scanning area.
Referring to fig. 3, further, the connection portion 612 is used to connect the cantilever 61 to a probe substrate.
Specifically, the cantilever 61 and the probe substrate form an integrated structure, and the scanning probe 62 and the illumination portion 63 may be formed on the cantilever 61 by inductively coupled plasma etching.
The light emitting area formed by the light emitted from the light emitting portion 63 can cover the tip of the scanning probe 62, so that the area where the scanning probe 62 is scanning and detecting is the area where the light spot is located. The size of the light spot is reduced by ensuring that the scanning area of the scanning probe 62 is also the area where the light spot is located. When the scanning probe 62 moves on the surface of the sample, the scanning probe 62 can rapidly scan in an illumination area, and a light spot of excitation light moves synchronously with a scanning position of the scanning probe 62, so that an accurate photoelectric potential V dc can be obtained, further an instantaneous response of generation and diffusion gradient of a carrier can be accurately captured, and measurement of photoelectric properties under ultra-high space-time resolution is realized.
Referring to fig. 3, further, the illumination part 63 includes: a support 630 and a micro-sized semiconductor light emitting unit array 631. Wherein the supporting body 630 is formed by the protrusion of the main arm portion 610; the micro-sized semiconductor light emitting unit array 631 is disposed on a surface of the support 630 facing the scanning probe 62. Specifically, the support 630 may be formed on the cantilever 61 by inductively coupled plasma etching, and the micro-sized semiconductor light emitting cell array 631 may be adhered to the support 630 by adhesion or the like, but the present invention is not limited thereto.
Referring to fig. 3, further, the supporting body 630 has a triangular prism shape, the cross-sectional shape of the supporting body 630 has an isosceles triangle shape, and the cross-sectional shape of the micro-scale semiconductor light emitting unit array 631 has a square shape.
Referring to fig. 3, further, the scanning probe 62 is cone-shaped, and the cross-section of the scanning probe 62 is isosceles triangle-shaped.
Referring to fig. 3, further, the height of the supporting body 630 is smaller than the height of the scanning probe 62.
Referring to fig. 3, further, the cantilever 61, the scanning probe 62, and the supporter 630 are integrally formed of silicon.
Further, the manufacturing and forming process of the micro-scale semiconductor light emitting unit array 631 includes: the micro LED device structure is grown on the sapphire by a metal organic chemical vapor deposition method, and the size of a single pixel point is as small as possible (< 15 um), so that the incident light source is ensured to be small enough, and the emergent light spots are ensured to be concentrated. And removing the sapphire substrate by a chemical mechanical polishing method to manufacture the light source module capable of emitting light.
The Micro LED is a diode having a size of 50 μm or less, in which a structure of a conventional Light Emitting Diode (LED) is thinned, miniaturized, and arrayed.
Furthermore, in order to assemble micro LEDs to scanning probes, a silicon cantilever structure is designed to match the micro LEDs. In a specific embodiment, the existing conductive silicon cantilever is improved, and a conical structure is corroded at the rear end of the needle tip by using an inductively coupled plasma etching method, so that the micro LED is adhered, and the emergent light energy of the micro LED covers the range of the tip end of the needle tip.
In the invention, micro LEDs are adopted to replace the mode of introducing excitation light into an optical lens unit in the traditional photoelectric multifunctional probe system, so that better excitation effect is realized, the light spot size is reduced, and the light spot brightness is improved. The scanning area of the scanning probe is the micro LED emergent light area, carriers are intensively generated in the area, and meanwhile, the influence of defects and component non-uniformity on the dynamic properties such as carrier diffusion length, recombination rate and the like is quantitatively measured. The novel light-assisted scanning probe can help to know the photoelectric property of the micro-area on the surface of the material more accurately, and provides a reliable experimental means for the research of the fields of semiconductor materials, light-emitting devices, solar cells, photoelectric conversion devices and the like.
Fig. 2 is a dimensional diagram of a probe structure according to an embodiment of the present invention, and referring to fig. 2, the probe structure provided by the present invention satisfies the following I-IV terms:
I：δ>-(lpcosα+hmsinα)tanγ-lpsinα+hmcosα。
II：2wmsinα＜dp＜2htanα。
III：
①＝[-δcosβ+hm cos(α+β)+hcosβ cot(α+β+θ)
-wm cos(α+β)cot(α+β+θ)+hsinβ+δcot(α+β+θ)sinβ
-wm sin(α+β)-hm cot(α+β+θ)sin(α+β)-hcosβtanγ
+h cot(α+β+θ)sinβtanγ]/[cos(α+β)cot(α+β+θ)+sin(α+β)]②＝[-δcosβ+hmcos(α+β)+hcosβ cot(α+β-θ)+hsinβ+δcot(α+β-θ)sinβ
-hm cot(α+β-θ)sin(α+β)-hcosβtanγ
+h cot(α+β-θ)sinβtanγ]/[cos(α+β)cot(α+β-θ)+sin(α+β)]
①＜lp＜②。
IV：hcosβ+(htanγ+δ)sinβ-lpcos(α+β)-hm sin(α+β)-wmcos(α+β)>0。
Specifically, referring to fig. 2 and 3, reference numeral 5 in fig. 2 indicates a sample, and the micro-scale semiconductor light emitting unit array is formed by using micro LEDs, so in the above-mentioned I-IV term, the parameter h m indicates the height of the grown micro LEDs, w m indicates the width of the grown micro LEDs, θ indicates the divergence angle of the emitted light, γ indicates the half cone angle of the silicon tip, h indicates the height of the tip, β indicates the inclination angle of the probe and the sample surface during scanning, d m indicates the width of the support, α indicates the half cone angle of the support, δ indicates the distance between the support and the probe, and l p indicates the distance from the micro LEDs to the cantilever.
When the scanning probe 62 is cone-shaped, in the above-mentioned item I-IV, the height h m μm, the width w m 5 μm, the divergence angle θ of the emitted light 2 °, the half cone angle γ of the silicon tip 10 °, the height h of the tip 15 μm, the inclination angle β of the probe and the sample surface 10 ° during scanning, the width d m of the support of the cone structure 20 μm, the half cone angle α of the support of the cone structure 40 °, the distance δ between the support of the cone structure and the probe 15 μm, the distance l p from the micro LED to the cantilever zero, and l p zero, i.e., the micro LED is attached to the root of the cone structure Ji Xuanbei. At this time, the longest dimension of the spot irradiated onto the sample was 5.8. Mu.m.
Furthermore, the height h of the silicon needle tip can be changed according to the processing requirement, and when h=30μm for some slender needle tips, for example, the other sizes are kept unchanged, the adhesion position of the micro LED cannot be adhered to the root, so that the emitted light cannot irradiate the needle tip, and the light spot range can be ensured to cover the position of the needle tip only when l p is at least greater than 4.14 μm.
Furthermore, in designing the probe structure, the following requirements are satisfied for the taper structure processing size of the micro LED and the tip and the position of bonding the micro LED:
(1) micro LEDs cannot interfere with the silicon tip. By controlling the sticking position of the micro LED, namely controlling l p, the micro LED and the silicon needle point are ensured not to overlap, and the micro LED and the silicon needle point are ensured not to intersect.
(2) The height of the conical structure support body on the cantilever is smaller than the height of the needle point, and the length of the bevel edge of the conical structure support body is larger than the width of the micro LED.
(3) The position of the bonding micro LED can ensure that the emergent light area covers the needle point.
(4) Micro LEDs cannot contact the sample surface.
By satisfying the I-IV term, the emergent light of the micro LED can be ensured to be just focused at the contact position of the needle point and the sample, and the micro LED can be ensured not to contact the surface of the sample.
Since it is necessary to make the micro LED conductive, it is necessary to plate an electrode layer or the like capable of making the micro LED conductive on the support of the taper structure on the cantilever, and by satisfying the above-described item i to iv, the distance from the subsequent plating layer to the cantilever 61 can be determined.
In designing the probe structure, the divergence angle of the micro LED is measured by a lens change method, a double-hole method, or the like in a specific embodiment.
Fig. 4 is a schematic diagram of a probe structure according to an embodiment of the present invention, referring to fig. 3 and 4, the cantilever 61, the scanning probe 62, and the supporting body 630 are covered with a conductive layer 7, and the micro semiconductor light emitting unit array 631 is electrically insulated from the conductive layer 7.
Referring to fig. 4, further, the conductive layer 7 is a Pt/Ir conductive layer.
Referring to fig. 3 and 4, further, the cantilever 61 is formed with a first insulating layer 81, a first electrode layer 91, a second insulating layer 82, and a second electrode layer 92 sequentially covered on the conductive layer 7 on one side of the support 630, a portion of the first electrode layer 91, a portion of the second insulating layer 82, and a portion of the second electrode layer 92 on a surface of the support 630 facing the scan probe 62 are removed to expose the first insulating layer 81, the micro semiconductor light emitting unit array 631 is connected to the exposed first insulating layer 81, and an anode of the micro semiconductor light emitting unit array 631 is electrically connected to the first electrode layer 91, and a cathode of the micro semiconductor light emitting unit array 631 is electrically connected to the second electrode layer 92.
Referring to fig. 3 and 4, further, in designing the insulating layer and the electrode layer, a first insulating layer 81 is first deposited on the conductive layer 7 on the side of the cantilever 61 forming the support 630, where the deposition positions of the first insulating layer 81 on the conductive layer 7 on the side of the cantilever 61 forming the support 630 are: on the support 630 and on the cantilever 61 on the right side of the support 630. And the first insulating layer 81 is not deposited on the cantilever 61 located at the left side of the support 630 near the scanning probe 62.
Referring to fig. 2,3 and 4, after the first insulating layer 81 is deposited, the first electrode layer 91, the second insulating layer 82 and the second electrode layer 92 are determined according to the parameter l e. Wherein, in the formula l e＝lp+wm, in the formula l e＝lp+wm, the parameter l e,le is determined according to the parameters l p and w m, and the distance between the first electrode layer 91, the second insulating layer 82 and the second electrode layer 92 on the support 630 and the cantilever 61 is represented. When the value of the parameter l e is determined, the first electrode layer 91 is deposited on the support 630 and the first insulating layer 81 on the cantilever 61 located on the right side of the support 630, wherein the first electrode layer 91 is not deposited on the first insulating layer 81 on the support 630 where the distance l e from the micro semiconductor light emitting cell array 631 to the cantilever 61 is located. After the first electrode layer 91 is deposited, the second insulating layer 82 and the second electrode layer 92 are sequentially deposited. In this way, the deposition of the first insulating layer 81, the first electrode layer 91, the second insulating layer 82, and the second electrode layer 92 is completed. The above deposition process can enable the micro-sized semiconductor light emitting cell array 631 on the support 630 to be sufficiently bonded to the first electrode layer 91 and the second electrode layer 92, ensuring that the micro-sized semiconductor light emitting cell array 631 can conduct electricity.
Further, the first insulating layer 81 and the second insulating layer 82 are both Si 3N4 insulating layers, and the first electrode layer 91 and the second electrode layer 92 are both gold electrode layers.
Further, the Pt/Ir conductive layer can conduct electricity through the needle point and form a capacitor with the sample; the gold electrode is used for power supply and control of the micro LED device.
According to the invention, a silicon cantilever needle point with a conical structure is prepared by micro-nano processing, a micro LED light emitting module is introduced on a traditional conductive scanning probe, so that excitation light and the scanning probe are integrated, meanwhile, a Pt/Ir conductive layer is deposited on the silicon cantilever, then, a Si 3N4 insulating layer, a gold electrode, a Si 3N4 insulating layer and a gold electrode are deposited layer by layer on the Pt/Ir conductive layer on one side of the silicon cantilever with the conical structure, and a micro LED lead wire is connected with the gold electrode through silver colloid pasting, so that the novel light-assisted scanning probe based on the micro LED is completed.
Still further, since the micro LED device is very small in size, it can be assembled with the probe cantilever using a mechanical device or a robot under an optical microscope or a scanning electron microscope.
Furthermore, when the probe structure is designed, an integrated needle tip seat which excites the probe to resonate and is connected with a gold electrode to control the micro LED switch is also designed, and a circuit for controlling the micro LED is integrated with an AFM controller. The control module of the micro LED light-emitting device is integrated to the AFM scanning controller, so that the integrated control of the whole excitation-detection system can be realized, and the measurement accuracy and reliability are improved. The novel light-assisted scanning probe based on the micro LED solves the difficulty that the conventional conductive scanning probe cannot acquire the instant process of generating the photo-generated carriers in the photoelectric test.
In order to solve the problem that the existing scanning probe electron microscope cannot realize measurement of photoelectric properties under ultrahigh space-time resolution, a quantum dot optical fiber probe with stable luminescence and long fluorescence life can be adopted, a sample is excited by the quantum dot to generate a photogenerated carrier, meanwhile, the quantum dot is used as a detection means, a local electric field generated on the surface of a tested object changes the energy level structure of the quantum dot, so that the luminescence intensity and the spectrum of the quantum dot are changed, and therefore the electric field distribution information on the surface of the sample can be detected, and further the surface potential is deduced.
The probe structure provided by the invention is applied to an optical voltage scanning probe microscope, and the following technical effects are achieved in the practical application process:
(1) The method adopts the mode of integrating excitation light and a scanning probe, does not need to replace an optical component or build an optical path system, and saves the space required by an instrument.
(2) The excitation light spots synchronously move along with the scanning position of the needle point, so that the detection of high-resolution photovoltage micro-area signals can be realized.
(3) Since the micro LED is only a distance of tens of micrometers from the sample, the size of the spot of the excited sample can be reduced and the illumination efficiency can be improved.
(4) The micro LED and the probe are simple to assemble and easy to operate.
In summary, the embodiment of the invention provides a probe structure, in which excitation light and a scanning probe are integrated, and a probe scanning area is an emergent light area, so that high-resolution measurement of dynamic properties such as carrier diffusion length and recombination rate of semiconductor materials due to defects and component non-uniformity is realized, and the problem that the existing scanning probe electron microscope cannot realize measurement of photoelectric properties under ultra-high space-time resolution can be solved.
The foregoing is merely illustrative of the embodiments of this application and it will be appreciated by those skilled in the art that variations and modifications may be made without departing from the principles of the application, and it is intended to cover all modifications and variations as fall within the scope of the application.
Claims (10)
1. A probe structure for use in a photovoltage scanning probe microscope, the probe structure comprising:
The cantilever comprises a main arm part, a probe part positioned at one end of the main arm part and a connecting part positioned at the other end of the main arm part and used for connection;
a scanning probe provided on the probe section;
and the illumination part is arranged on the main arm part and is closer to the probe part relative to the connecting part, the scanning probe and the illumination part are positioned on the same side of the cantilever, and the illumination part is used for emitting light to the scanning area when the scanning probe operates on the sample in the scanning area.
2. The probe structure according to claim 1, wherein the light emitting portion includes:
a support body formed by the main arm portion protruding;
And the micron-sized semiconductor light-emitting unit array is arranged on the surface of the support body facing the scanning probe.
3. The probe structure according to claim 2, wherein the support body has a triangular prism shape, and the cross-sectional shape of the support body has an isosceles triangle shape, and the cross-sectional shape of the micro-scale semiconductor light emitting cell array has a square shape.
4. A probe structure according to claim 3, wherein the scanning probe is cone-shaped and the cross-sectional shape of the scanning probe is isosceles triangle.
5. The probe structure of claim 4, wherein a height of the support is less than a height of the scanning probe.
6. The probe structure of claim 4 or 5, wherein the probe structure satisfies the following terms i-iv:
Ⅰ：δ>-(lpcosα+hmsinα)tanγ-Lpsinα+hmcosα；
Ⅱ：2wmsinα<dp<2htanα；
Ⅲ：
①＝[-δcosβ+hmcos(α+β)+hcosβcot(α+β+θ)-wmcos(α+β)cot(α+β+θ)+hsinβ+δcot(α+β+θ)sinβ-wmsin(α+β)-hmcot(α+β+θ)sin(α+β)-hcosβtanγ+hcot(α+β+θ)sinβtanγ]/[cos(α+β)cot(α+β+θ)+sin(α+β)]
②＝[-δcosβ+hmcos(α+β)+hcosβcot(α+β-θ)+hsinβ+δcot(α+β-θ)sinβ-hmcot(α+β-θ)sin(α+β)-hcosβtanγ+h cot(α+β-θ)sinβtanγ]/[cos(α+β)cot(α+β-θ)+sin(α+β)]
①<lp<②；
Ⅳ：hcosβ+(htanγ+δ)sinβ-lpcos(α+β)-hmsin(α+β)-wmcos(α+β)>0；
In the above-mentioned terms i-iv, the parameter h m represents the height of the micro-scale semiconductor light emitting unit array, w m represents the width of the micro-scale semiconductor light emitting unit array, θ represents the divergence angle of the emitted light, γ represents the half cone angle of the scanning probe tip, h represents the height of the scanning probe tip, β represents the inclination angle of the scanning probe to the sample surface during scanning, d m represents the width of the support, α represents the half cone angle of the support, δ represents the distance between the support and the scanning probe, and l p represents the distance from the micro-scale semiconductor light emitting unit array to the cantilever.
7. The probe structure according to any one of claims 2 to 5, wherein the cantilever, the scanning probe, and the support are covered with a conductive layer, and the array of micro-scale semiconductor light emitting cells is electrically insulated from the conductive layer.
8. The probe structure according to claim 7, wherein the cantilever is formed with a first insulating layer, a first electrode layer, a second insulating layer, and a second electrode layer sequentially covered on the conductive layer on one side of the support body, a portion of the first electrode layer, a portion of the second insulating layer, and a portion of the second electrode layer on a surface of the support body facing the scanning probe are removed to expose the first insulating layer, the micro-sized semiconductor light emitting cell array is connected to the exposed first insulating layer, and an anode of the micro-sized semiconductor light emitting cell array is electrically connected to the first electrode layer, and a cathode of the micro-sized semiconductor light emitting cell array is electrically connected to the second electrode layer.
9. The probe structure according to any one of claims 2 to 5, wherein the cantilever, the scanning probe, and the support are integrally made of silicon.
10. An optical voltage scanning probe microscope comprising a probe structure according to any one of claims 1 to 9.
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