CN117908628B - Temperature compensation circuit - Google Patents
Temperature compensation circuit Download PDFInfo
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- CN117908628B CN117908628B CN202410313353.0A CN202410313353A CN117908628B CN 117908628 B CN117908628 B CN 117908628B CN 202410313353 A CN202410313353 A CN 202410313353A CN 117908628 B CN117908628 B CN 117908628B
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- 230000005669 field effect Effects 0.000 claims abstract description 78
- 230000007423 decrease Effects 0.000 claims description 19
- 230000004044 response Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000003321 amplification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
Abstract
The invention relates to a temperature compensation circuit, comprising: a field effect transistor T1, a field effect transistor T2, a diode D1, a diode D2, a resistor R1 and a resistor R2; one end of the resistor R2, the drain electrode of the field effect tube T1 and the drain electrode of the field effect tube T2 are respectively connected with a power circuit, the other end of the resistor R2 is connected with the diode D2, and the other end of the diode D2 is grounded; the resistor R2 and the diode D2 form series voltage division to control the field effect transistor T2; the source electrode of the field effect transistor T2 is connected with a diode D1, and the other end of the diode D1 is grounded; the field effect tube T2 and the diode D1 form series voltage division to control the grid electrode of the field effect tube T1; the source electrode of the field effect tube T1 is connected with a resistor R1, and the other end of the resistor R1 is grounded; the field effect transistor T1 and the resistor R1 form a series voltage division, and the control voltage VG is outputted. Therefore, the circuit can be ensured to output control voltage with wide compensation range in a short response time, the grid bias of the amplifier is controlled, and the function of temperature compensation of the amplifier circuit is realized.
Description
Technical Field
The invention relates to the technical field of amplifier circuits, in particular to a temperature compensation circuit.
Background
In the prior art, the temperature compensation method of the common amplifier mainly comprises the following steps: 1. the operational amplifier control voltage compensation method comprises the following steps: and the signal at the output end is sampled and processed and fed back to the input end, so that closed loop feedback is formed. The method has the defects of long response time, large temperature drift and the like. 2. Thermistor partial pressure compensation method: and compensating by utilizing the voltage division of the thermistor. The method has the advantages of small compensation range, low precision and larger output voltage change when the reference voltage is changed. 3. The off-chip bias circuit compensation method comprises the following steps: the bias circuit is arranged outside the amplifier chip, and based on the temperature characteristics of the field effect transistor and the diode, the bias circuit outputs different bias voltages at different temperatures, and the static working point, the bias voltage and the like of the field effect transistor are controlled. But this approach is disadvantageous for system miniaturization. In order to suppress the influence caused by the difference between high and low temperatures, the temperature compensation circuit adopted at present has no effective solution to the situations of long response time and small compensation range.
Disclosure of Invention
Therefore, the present invention is directed to a temperature compensation circuit, which overcomes the technical problems of long response time and small compensation range of the current temperature compensation circuit.
In order to achieve the above purpose, the invention adopts the following technical scheme:
According to a first aspect of the present invention, there is provided a temperature compensation circuit provided on an amplifier chip, the temperature compensation circuit comprising: a field effect transistor T1, a field effect transistor T2, a diode D1, a diode D2, a resistor R1 and a resistor R2;
One end of the resistor R2, the drain electrode of the field effect tube T1 and the drain electrode of the field effect tube T2 are respectively connected with a power circuit, the other end of the resistor R2 is connected with the diode D2, and the other end of the diode D2 is grounded; the resistor R2 and the diode D2 form series voltage division to control the grid electrode of the field effect transistor T2;
The source electrode of the field effect transistor T2 is connected with the diode D1, and the other end of the diode D1 is grounded; the field effect tube T2 and the diode D1 form series voltage division to control the grid electrode of the field effect tube T1;
the source electrode of the field effect transistor T1 is connected with the resistor R1, and the other end of the resistor R1 is grounded; the field effect transistor T1 and the resistor R1 form series voltage division, and the control voltage VG is output.
Optionally, the temperature compensation circuit further comprises a diode D3;
the diode D3 is disposed between the diode D1 and the ground terminal.
Optionally, the power supply circuit comprises a voltage source VCC.
Optionally, the FET die is used for both the FET T1 and the FET T2.
Alternatively, the resistor R1 and the resistor R2 each employ a resistor having a constant temperature drift coefficient.
Optionally, the resistor R1 has a value of 400-600 ohms.
Optionally, the resistor R2 has a value of 500-1000 ohms.
Optionally, the turn-on voltage of the diode D2 decreases with an increase in temperature, so that the gate voltage of the field effect transistor T2 decreases with an increase in temperature.
Optionally, the turn-on voltage of the diode D1 and/or the diode D3 decreases with an increase in temperature, the gate voltage of the fet T2 decreases with an increase in temperature, and the resistance of the fet T2 increases with an increase in temperature to control the gate voltage of the fet T1 to decrease with an increase in temperature.
Optionally, the gate voltage of the fet T1 increases with an increase in temperature, and the resistance of the fet T1 decreases with an increase in temperature to control the control voltage VG to increase with an increase in temperature.
The one or more technical schemes provided by the invention can have the following advantages or at least realize the following technical effects:
the application provides a temperature compensation circuit, which comprises: a field effect transistor T1, a field effect transistor T2, a diode D1, a diode D2, a resistor R1 and a resistor R2; one end of the resistor R2, the drain electrode of the field effect tube T1 and the drain electrode of the field effect tube T2 are respectively connected with a power circuit, the other end of the resistor R2 is connected with the diode D2, and the other end of the diode D2 is grounded; the resistor R2 and the diode D2 form series voltage division to control the field effect transistor T2; the source electrode of the field effect transistor T2 is connected with the diode D1, and the other end of the diode D1 is grounded; the field effect tube T2 and the diode D1 form series voltage division to control the grid electrode of the field effect tube T1; the source electrode of the field effect transistor T1 is connected with the resistor R1, and the other end of the resistor R1 is grounded; the field effect transistor T1 and the resistor R1 form series voltage division, and the control voltage VG is output. According to the technical scheme, the circuit is redesigned and optimized aiming at the scenes of long response time and small compensation range, the circuit can be ensured to output control voltage with wide compensation range in shorter response time, the grid bias of the amplifier is controlled, and the function of temperature compensation of the amplifier circuit is realized.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a temperature compensation circuit of the present invention;
FIG. 2 is a graph showing the output voltage of the temperature compensation circuit according to the present invention as a function of ambient temperature.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in the present invention, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a device or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such device or system. Without further limitation, an element defined by the phrase "comprising … …" does not exclude that an additional identical element is present in a device or system comprising the element. In the present invention, unless explicitly specified and limited otherwise, the terms "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be either a fixed connection or a removable connection or integrated; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; the communication between the two elements can be realized, or the interaction relationship between the two elements can be realized. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
In order to suppress the influence caused by the difference between high and low temperatures, in the prior art, a temperature compensation method of an amplifier is commonly used, and the technical problems of long response time and small compensation range cannot be solved. In view of this, the present invention provides a temperature compensation circuit, and specific embodiments and implementations thereof are as follows:
Referring to fig. 1, fig. 1 is a schematic circuit diagram of a temperature compensation circuit according to the present invention; the embodiment of the invention provides a temperature compensation circuit. The temperature compensation circuit is arranged on the radio frequency power amplifier chip and can comprise:
a field effect transistor T1, a field effect transistor T2, a diode D1, a diode D2, a resistor R1 and a resistor R2;
One end of the resistor R2, the drain electrode of the field effect tube T1 and the drain electrode of the field effect tube T2 are respectively connected with a power circuit, the other end of the resistor R2 is connected with the diode D2, and the other end of the diode D2 is grounded; the resistor R2 and the diode D2 form series voltage division to control the grid electrode of the field effect transistor T2; the source electrode of the field effect transistor T2 is connected with the diode D1, and the other end of the diode D1 is grounded; the field effect tube T2 and the diode D1 form series voltage division to control the grid electrode of the field effect tube T1; the source electrode of the field effect transistor T1 is connected with the resistor R1, and the other end of the resistor R1 is grounded; the field effect transistor T1 and the resistor R1 form series voltage division, and the control voltage VG is output.
The temperature compensation circuit provided by the embodiment of the invention is used for adjusting the voltage provided by the power supply circuit according to the ambient temperature change, and providing the grid bias voltage to control the amplifier so as to realize the function of temperature compensation of the amplifier circuit.
As shown in fig. 1, an input end of the temperature compensation circuit (including one end of the resistor R2, the drain electrode of the field effect transistor T1, and the drain electrode of the field effect transistor T2) is connected to a power supply circuit, and an output end thereof may be connected to an amplifier circuit to output a control voltage (gate bias voltage) for the amplifier circuit. The temperature compensation circuit can correspondingly adjust the output control voltage according to the change of the ambient temperature, and plays a role in adjusting the high-low temperature gain of the amplifier. Specifically, the control voltage output by the temperature compensation circuit increases along with the increase of the ambient temperature and decreases along with the decrease of the ambient temperature, so that the gain compensation of the high-low temperature state of the power amplification circuit is realized.
Further, as shown in fig. 1, the temperature compensation circuit further includes a diode D3; the diode D3 is disposed between the diode D1 and the ground terminal.
Specifically, diode D3 provides further temperature compensation, creating a dual voltage drop with diode D1 that varies with temperature to further regulate or stabilize the voltage or current in the circuit, thereby reducing the effect of temperature on circuit performance.
Further, the power supply circuit may include a voltage source VCC. The positive pole of the voltage source VCC is connected with the input end of the temperature compensation circuit, and the negative pole of the voltage source VCC is grounded.
Specifically, the voltage source VCC in the power supply circuit may be a negative voltage source VCC for providing a negative voltage to the temperature compensation circuit.
Further, both field effect transistors T1 and T2 may employ small die FET (FIELD EFFECT Transistor) die to reduce the dc power consumption of the temperature compensation circuit.
Further, the resistors R1 and R2 each adopt a resistor with a constant temperature drift coefficient, so that the resistance value does not fluctuate with the change of the ambient temperature, or fluctuates less. In practical application, the control voltage output by the temperature compensation circuit can be adjusted in a large dynamic range along with the change of the ambient temperature by reasonably designing the resistance value of each resistor. Preferably, the value of the resistor R1 can be 400-600 ohms; the value of the resistor R2 can be 500-1000 ohms. It should be noted that, the resistor value in the embodiment of the present invention is specifically adjusted according to the bias requirement of the gate of the amplifier.
The working principle of the temperature compensation circuit in the embodiment of the invention is as follows:
in the temperature compensation circuit (shown in fig. 1) provided by the embodiment of the invention, the resistor R2 and the diode D2 form a series voltage division to control the gate of the field effect transistor T2. The turn-on voltage of the diode D2 decreases with an increase in temperature, resulting in a decrease in the gate voltage of the field effect transistor T2 with an increase in temperature.
The field effect transistor T2 is connected with the diode D1 and the diode D3 in series to form series voltage division, and the grid electrode of the field effect transistor T1 is controlled. The on-voltage of the diodes D1 and D3 decreases with an increase in temperature, the gate voltage of the field-effect transistor T2 decreases with an increase in temperature, and the on-resistance of the field-effect transistor T2 increases with an increase in temperature, resulting in an increase in the gate voltage of the field-effect transistor T1 with an increase in temperature.
The field effect transistor T1 and the resistor R1 form a series voltage division, and the final gate control voltage VG is outputted. The gate voltage of the field effect transistor T1 increases with the temperature, and the on-resistance of the field effect transistor T1 decreases with the temperature, so that the gate control voltage VG increases with the temperature, and the temperature compensation function is achieved.
As shown in fig. 2, a graph of the output voltage of the temperature compensation circuit along with the change of the ambient temperature is shown, and as the ambient temperature increases, the output voltage of the temperature compensation circuit also increases, when the voltage acts on the amplifier circuit, the gain of the power amplification circuit at high temperature can be improved, and the gain of the power amplification circuit at low temperature can be reduced. The temperature compensation circuit formed by the resistor and the diode in the prior art is suitable for the grid temperature compensation circuit under the high-power condition, and the temperature compensation effect is poor when the grid current is changed greatly.
The temperature compensation circuit of the present embodiment includes: a field effect transistor T1, a field effect transistor T2, a diode D1, a diode D2, a resistor R1 and a resistor R2; one end of the resistor R2, the drain electrode of the field effect tube T1 and the drain electrode of the field effect tube T2 are respectively connected with a power circuit, the other end of the resistor R2 is connected with the diode D2, and the other end of the diode D2 is grounded; the resistor R2 and the diode D2 form series voltage division to control the field effect transistor T2; the source electrode of the field effect transistor T2 is connected with the diode D1, and the other end of the diode D1 is grounded; the field effect tube T2 and the diode D1 form series voltage division to control the grid electrode of the field effect tube T1; the source electrode of the field effect transistor T1 is connected with the resistor R1, and the other end of the resistor R1 is grounded; the field effect transistor T1 and the resistor R1 form series voltage division, and the control voltage VG is output. The technical scheme of the invention redesigns and optimizes the circuit aiming at the scenes of long response time and small compensation range, specifically adopts a two-stage control structure, enlarges the variation range of voltage along with temperature variation, and realizes temperature compensation voltage output by utilizing the negative temperature characteristic of diode on voltage and the on characteristic of FET tube core along with gate-source voltage. The circuit can output control voltage with wide compensation range in a short response time, control the grid bias of the amplifier and realize the function of temperature compensation of the amplifier circuit.
It should be noted that, the foregoing reference numerals of the embodiments of the present invention are merely for describing the embodiments, and do not represent the advantages and disadvantages of the embodiments. The foregoing description is only of the optional embodiments of the present invention, and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings under the concept of the present invention, or direct or indirect application in other related technical fields, are included in the scope of the present invention.
The foregoing description of the embodiments and description is presented to illustrate the scope of the invention, but is not to be construed as limiting the scope of the invention. Modifications, equivalents, and other improvements to the embodiments of the invention or portions of the features disclosed herein, as may occur to persons skilled in the art upon use of the invention or the teachings of the embodiments, are intended to be included within the scope of the invention, as may be desired by persons skilled in the art from a logical analysis, reasoning, or limited testing, in combination with the common general knowledge and/or knowledge of the prior art.
Claims (10)
1. A temperature compensation circuit, wherein the temperature compensation circuit is disposed on an amplifier chip, the temperature compensation circuit comprising: a field effect transistor T1, a field effect transistor T2, a diode D1, a diode D2, a resistor R1 and a resistor R2;
One end of the resistor R2, the drain electrode of the field effect tube T1 and the drain electrode of the field effect tube T2 are respectively connected with a power circuit, the other end of the resistor R2 is connected with the diode D2, and the other end of the diode D2 is grounded; the resistor R2 and the diode D2 form series voltage division to control the grid electrode of the field effect transistor T2;
The source electrode of the field effect transistor T2 is connected with the diode D1, and the other end of the diode D1 is grounded; the field effect tube T2 and the diode D1 form series voltage division to control the grid electrode of the field effect tube T1;
the source electrode of the field effect transistor T1 is connected with the resistor R1, and the other end of the resistor R1 is grounded; the field effect transistor T1 and the resistor R1 form series voltage division, and the control voltage VG is output.
2. The temperature compensation circuit of claim 1, further comprising a diode D3;
the diode D3 is disposed between the diode D1 and the ground terminal.
3. The temperature compensation circuit of claim 1 wherein said power supply circuit comprises a voltage source VCC.
4. The temperature compensation circuit of claim 1 wherein said FET T1 and said FET T2 each employ FET die.
5. The temperature compensation circuit of claim 1 wherein said resistor R1 and said resistor R2 each employ a resistor having a constant temperature drift coefficient.
6. The temperature compensation circuit of claim 1, wherein the resistor R1 has a value of 400-600 ohms.
7. The temperature compensation circuit of claim 1, wherein the resistor R2 has a value of 500-1000 ohms.
8. The temperature compensation circuit according to any one of claims 1 to 7, wherein the turn-on voltage of the diode D2 decreases with increasing temperature, so that the gate voltage of the field effect transistor T2 decreases with increasing temperature.
9. The temperature compensation circuit of claim 8, wherein the turn-on voltage of the diode D1 and/or the diode D3 decreases with increasing temperature, the gate voltage of the fet T2 decreases with increasing temperature, and the resistance of the fet T2 increases with increasing temperature to control the gate voltage of the fet T1 to decrease with increasing temperature.
10. The temperature compensation circuit of claim 9 wherein the gate voltage of the fet T1 increases with increasing temperature and the resistance of the fet T1 decreases with increasing temperature to control the control voltage VG to increase with increasing temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410313353.0A CN117908628B (en) | 2024-03-19 | 2024-03-19 | Temperature compensation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410313353.0A CN117908628B (en) | 2024-03-19 | 2024-03-19 | Temperature compensation circuit |
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| CN117908628A CN117908628A (en) | 2024-04-19 |
| CN117908628B true CN117908628B (en) | 2024-05-24 |
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| CN202410313353.0A Active CN117908628B (en) | 2024-03-19 | 2024-03-19 | Temperature compensation circuit |
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| CN117908628A (en) | 2024-04-19 |
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