CN117894659A

CN117894659A - Focusing ring, substrate processing apparatus including the same, and semiconductor manufacturing method

Info

Publication number: CN117894659A
Application number: CN202310789085.5A
Authority: CN
Inventors: 高亨植
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2022-07-15
Filing date: 2023-06-29
Publication date: 2024-04-16

Abstract

The substrate processing apparatus includes a focus ring including: a central shaft extending in a first direction; a top surface having a first inner diameter; a bottom surface having a second inner diameter smaller than the first inner diameter; and an inner side surface between the top surface and the bottom surface, the inner side surface including a first inner side surface and a second inner side surface, wherein the second inner side surface extends downward from the first inner side surface, and a first angle between the first inner side surface and a line corresponding to the first direction is different from a second angle between the second inner side surface and a line corresponding to the first direction.

Description

Focusing ring, substrate processing apparatus including the same, and semiconductor manufacturing method

Cross Reference to Related Applications

The present application is based on and claims priority of korean patent application No.10-2022-0087807 filed in the korean intellectual property office at day 7, month 15, 2022, korean patent application No.10-2022-0167940 filed at day 12, month 5, 2023, and korean patent application No.10-2023-0038333 filed at day 3, 2023, the entire disclosures of which are incorporated herein by reference.

Technical Field

The present invention relates to a focus ring, a substrate processing apparatus including the focus ring, and a semiconductor manufacturing method using the substrate processing apparatus, and more particularly, to a focus ring capable of being aligned with an electrostatic chuck structure, a substrate processing apparatus including the focus ring, and a semiconductor manufacturing method using the focus ring.

Background

Various processes may be used to fabricate the semiconductor device. For example, a semiconductor device may be manufactured by allowing a silicon wafer to undergo a photolithography process, an etching process, a deposition process, and the like. The plasma may be used in an etching process for manufacturing a semiconductor device. A focus ring may be employed to control the distribution of the plasma in a wafer etching process using the plasma.

The information disclosed in this background section is either already known to or derived by the inventors prior to or during the course of carrying out the embodiments of the application or is technical information obtained during the course of carrying out the embodiments. It may therefore include information that does not constitute prior art known to the public.

Disclosure of Invention

A focus ring having a central axis aligned to improve substrate deviation, a substrate processing apparatus including the focus ring, and a semiconductor manufacturing method using the focus ring are provided.

Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

According to an aspect of an example embodiment, a substrate processing apparatus may include a focus ring, the focus ring may include: a central shaft extending in a first direction; a top surface having a first inner diameter; a bottom surface having a second inner diameter smaller than the first inner diameter; and an inner side surface between the top surface and the bottom surface, the inner side surface including a first inner side surface and a second inner side surface, wherein the second inner side surface may extend downward from the first inner side surface, and a first angle between the first inner side surface and a line corresponding to the first direction may be different from a second angle between the second inner side surface and a line corresponding to the first direction.

According to one aspect of an example embodiment, a substrate processing apparatus may include: an electrostatic chuck structure including a chuck supporting a substrate; and a focus ring on a side surface of the chuck and having a central axis extending in a first direction, wherein a top surface of the focus ring may have a first inner diameter, a bottom surface of the focus ring may have a second inner diameter, the first inner diameter may be smaller than the second inner diameter, and a diameter of the chuck may be in a range of about 298.6mm to about 300 mm.

According to one aspect of an example embodiment, a substrate processing apparatus may include: an electrostatic chuck structure; a focus ring on the electrostatic chuck structure and having a central axis extending in a first direction; and an outer ring at least partially surrounding the focus ring, wherein an inner side surface of the focus ring may include a first inner side surface and a second inner side surface, the second inner side surface may contact the first inner side surface, and the first inner side surface may be closer to the electrostatic chuck structure than the second inner side surface.

According to one aspect of the present disclosure, a semiconductor manufacturing method may include: loading a substrate onto an electrostatic chuck structure; performing a semiconductor process; removing the substrate from the electrostatic chuck structure; and replacing the focus ring, wherein the focus ring may have a central axis extending in the first direction, the inner side surface of the focus ring may include a first inner side surface and a second inner side surface extending from the first inner side surface, and at least a portion of the second inner side surface of the focus ring may contact the electrostatic chuck structure and the center of the electrostatic chuck structure and the central axis of the focus ring may be aligned with each other when the focus ring is replaced.

Drawings

The foregoing and other aspects, features, and advantages of some example embodiments of the disclosure will become more apparent from the following description, taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to some embodiments of the present disclosure;

FIG. 2 is an enlarged view of portion A shown in FIG. 1, illustrating an electrostatic chuck, a focus ring, and an outer ring according to some embodiments of the present disclosure;

FIG. 3 is a diagram illustrating a focus ring according to some embodiments of the present disclosure;

FIG. 4 is a plan view illustrating a focus ring according to some embodiments of the present disclosure;

fig. 5, 6, 7, 8, and 9 are enlarged views of portion B shown in fig. 2, illustrating electrostatic chuck structures and focus rings according to some embodiments of the present disclosure;

FIG. 10 is an enlarged view of portion C shown in FIG. 2, illustrating a focus ring according to some embodiments of the present disclosure;

FIG. 11 is a cross-sectional view illustrating a substrate processing apparatus according to some embodiments of the present disclosure;

fig. 12, 13, and 14 are enlarged views of portion D shown in fig. 11, illustrating an electrostatic chuck and a focus ring according to some embodiments of the present disclosure;

fig. 15 is a flow chart illustrating a semiconductor manufacturing method according to some embodiments of the present disclosure;

Fig. 16, 17, 18, 19, and 20 are cross-sectional views illustrating the semiconductor fabrication method of fig. 15 according to some embodiments of the present disclosure; and

fig. 21 and 22 are enlarged views of portion E shown in fig. 20, illustrating focus rings according to some embodiments of the present disclosure.

Detailed Description

Hereinafter, example embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Like parts in the drawings are denoted by like reference numerals, and repetitive description thereof will be omitted. The embodiments described herein are example embodiments, and thus, the present disclosure is not limited thereto and may be implemented in various other forms.

As used herein, expressions such as "at least one of. For example, the expression "at least one of a, b and c" should be understood to include onlya. Including b only, c only, both a and b, both a and c, both b and c, or all a, b and c _。

Fig. 1 is a cross-sectional view illustrating a substrate processing apparatus according to some embodiments of the present disclosure.

Referring to fig. 1, a substrate processing apparatus 1 may be provided. The substrate processing apparatus 1 may be a facility that performs a semiconductor process on a substrate. For example, the semiconductor process may be an etching process, a deposition process, an ion implantation process, a cleaning process, and a photolithography process.

The substrate processing apparatus 1 may be a device in which plasma is used to etch one surface of a substrate. The substrate processing apparatus 1 may generate plasma in various ways. For example, the substrate processing apparatus 1 may generate plasma by using a Capacitively Coupled Plasma (CCP), an Inductively Coupled Plasma (ICP), or a Magnetically Enhanced RIE (MERIE) mode. However, the present disclosure is not limited thereto. For example, the substrate processing apparatus 1 may clean a substrate using plasma. For another example, the substrate processing apparatus 1 may not use plasma.

For convenience of description, the following description relates to a substrate processing apparatus 1 configured to generate plasma using a CCP mode.

The substrate processing apparatus 1 may include a process chamber CH, a gas supply GS, a ring lift pin mechanism RPM, a substrate lift pin mechanism WPM, a first Radio Frequency (RF) source ED1, and a second Radio Frequency (RF) source ED2.

The process chamber CH may include a showerhead SH, an electrostatic chuck structure 5, a confinement ring CR, a focus ring FR, a coupling ring 6, a ground ring 8, an outer ring 9, substrate lift pins 4, and ring lift pins 2. The process chamber CH may provide a process space PS. For example, the process space PS may house the showerhead SH, the electrostatic chuck structure 5, the confinement ring CR, the focus ring FR, the ground ring 8, the outer ring 9, the substrate lift pins 4, and the ring lift pins 2.

The gas supply portion GS may be located outside the process chamber CH and connected to the process chamber CH. For example, the gas supply GS may be connected to the process space PS through a gas inlet GI. For example, the gas supply GS may supply a process gas, which may be a plasma, to the process space PS through a gas inlet GI. The gas supply section GS may further include a gas tank and a compressor.

The showerhead SH may be located at an upper portion of the process chamber CH. A distribution space DH may be provided on the head SH. The distribution space DH may be connected to the gas supply GS through a gas inlet GI. The spray head SH may provide a dispensing hole GH. In a plan view, the distribution holes GH may be disposed along the second direction D2 and the third direction D3. Accordingly, the process gas supplied from the gas supply portion GS can be uniformly supplied to the electrostatic chuck structure 5 through the distribution holes GH. The spray head SH may have a planar shape on a bottom surface thereof, but the present disclosure is not limited thereto.

The confinement ring CR may surround or at least partially surround the space between the showerhead SH and the electrostatic chuck structure 5. The confinement ring CR may provide a slit CRe. The confinement ring CR may include a plurality of slits CRe. In a plan view, a plurality of slits CRe may be provided at regular intervals. Accordingly, the process gas supplied from the gas supply portion GS can be uniformly discharged through the plurality of slits CRe. The confinement ring CR may include a ground element CRg, and may be grounded through the ground element CRg.

The electrostatic chuck structure 5 may be located at the center of the process chamber CH. The substrate may be disposed on an electrostatic chuck structure 5. The electrostatic chuck structure 5 may support and/or hold a substrate. For example, when a substrate is disposed on the electrostatic chuck structure 5, the electrostatic chuck structure 5 may use electrostatic forces to firmly place the substrate in a fixed position. The electrostatic chuck structure 5 may be provided on its side surfaces with a coupling ring 6, a ground ring 8 and an outer ring 9. For example, the electrostatic chuck structure 5 may be surrounded or at least partially surrounded by each of the coupling ring 6, the ground ring 8, and the outer ring 9.

The focus ring FR may be located on the electrostatic chuck structure 5 and may surround or at least partially surround a substrate disposed on the electrostatic chuck structure 5. The focus ring FR may be a rotating body around the central axis CA. The central axis CA of the focus ring FR may extend in the first direction D1. For example, the focus ring FR may include silicon (Si) and/or silicon carbide (SiC), but the disclosure is not limited thereto. The focus ring FR may comprise, for example, quartz and/or boron carbide (B ₄ C) A. The invention relates to a method for producing a fibre-reinforced plastic composite The focus ring FR can be divided intoIn two or more members. Two or more members of the focus ring FR may comprise different materials from each other.

The coupling ring 6 may be located below the focus ring FR and may be a rotating body around the central axis CA. For example, the coupling ring 6 may be located between the focus ring FR and a ground ring 8, which will be described below, and may surround or at least partially surround the electrostatic chuck structure 5. For example, in plan view, the coupling ring 6 may surround or at least partially surround the outer circumference of the electrostatic chuck structure 5. The coupling ring 6 may comprise alumina (Al ₂ O ₃ )。

The ground ring 8 and the outer ring 9 may surround or at least partially surround the electrostatic chuck structure 5. The ground ring 8 and the outer ring 9 may each be a rotating body around the central axis CA. For example, the coupling ring 6 may be located on the ground ring 8. The outer ring 9 may surround or at least partially surround the focus ring FR while being located on the ground ring 8 and the coupling ring 6. The outer ring 9 may include a material different from that of the focus ring FR, but the present disclosure is not limited thereto.

The substrate lift pins 4 may extend in the first direction D1. The substrate lift pins 4 may vertically penetrate the electrostatic chuck structure 5. For example, the substrate lift pins 4 may be disposed in an electrostatic chuck structure 5. The substrate lift pins 4 may be connected to a substrate lift pin mechanism WPM. The substrate lift pins 4 may be vertically movable by a substrate lift pin mechanism WPM. The substrate lift pins 4 may be vertically movable to load and/or unload substrates onto and/or from the electrostatic chuck structure 5. A plurality of substrate lift pins 4 may be included. For example, three substrate lift pins 4 may be provided, but the present invention is not limited thereto. The plurality of substrate lift pins 4 may be spaced apart from each other in the horizontal direction. For convenience, a single substrate lift pin 4 will be described below.

The ring lifting pin 2 may extend in the first direction D1. The ring lift pins 2 may be located outside the electrostatic chuck structure 5. The ring lift pins 2 may vertically penetrate the coupling ring 6, the ground ring 8 and the outer ring 9. For example, the ring lifter pins 2 may be provided in the coupling ring 6, the ground ring 8, and the outer ring 9. The ring lifter pin 2 may be vertically movable by a ring lifter pin mechanism RPM. The ring lifting pins 2 can be vertically moved to load and/or unload the focus ring FR. A plurality of ring lifting pins 2 may be provided. For example, three ring lift pins 2 may be provided, but the present invention is not limited thereto. The plurality of ring lifting pins 2 may be spaced apart from each other in the horizontal direction. The single ring lift pin 2 will be described below.

The substrate lift pin mechanism WPM and the ring lift pin mechanism RPM may vertically move the substrate lift pins 4 and the ring lift pins 2, respectively. For example, each of the substrate lift pin mechanism WPM and the ring lift pin mechanism RPM may include an actuator, such as an electric motor and/or a hydraulic motor. The substrate lift pin mechanism WPM and the ring lift pin mechanism RPM are depicted as being located outside the process chamber CH, but the disclosure is not limited thereto.

The first RF power source ED1 may be electrically connected to the electrostatic chuck structure 5. The first RF power source ED1 may supply a first RF power to the electrostatic chuck structure 5. The second RF power source ED2 may be externally electrically connected to the electrostatic chuck structure 5. The second RF power source ED2 may supply a second RF power to the outside of the electrostatic chuck structure 5. The second RF power may be different from the first RF power. For example, the frequency of the first RF power may be different from the frequency of the second RF power. The first RF power and the second RF power may be supplied simultaneously or not simultaneously.

Fig. 2 is an enlarged view of portion a shown in fig. 1, illustrating an electrostatic chuck, a focus ring, and an outer ring according to some embodiments of the present disclosure.

In fig. 2, the description of the same components as those described with reference to fig. 1 may be omitted.

Referring to fig. 2, the electrostatic chuck structure 5 may include a plasma electrode 51 and a chuck 53. Plasma electrode 51 may include electrode body 511 and plateau 513.

Chuck 53 may be located on plasma electrode 51. The plasma electrode 51 may support a chuck 53. Both the plasma electrode 51 and the chuck 53 may have a cylindrical shape. The plasma electrode 51 may be connected to a first RF power source ED1. The plasma electrode 51 may be supplied with a first RF power from a first RF power source ED1. The plasma electrode 51 may include a conductive material. For example, the plasma electrode 51 may include aluminum (Al). When the substrate processing apparatus (see 1 of fig. 1) is a CCP device, the plasma electrode 51 may be a lower electrode. In addition, the spray head (see SH of fig. 1) may be an upper electrode.

Plateau 513 may be located on electrode body 511. Both electrode body 511 and plateau 513 may have a cylindrical shape. The plateau 513 may have a diameter smaller than the diameter of the electrode body 511. For example, the top surface of the electrode body 511 may be partially exposed to the outside. The focus ring FR may be located on the exposed top surface of the electrode body 511. For example, the electrode body 511 may support a portion of the focus ring FR. The top surface of the electrode body 511 may be located at the same level as the first bottom surface BS1 of the focus ring FR.

Chuck 53 may be located on plasma electrode 51. The substrate may be disposed on a top surface 53t of chuck 53. For example, chuck 53 may support and hold a substrate while contacting the substrate. Chuck 53 may be provided with a plurality of nubs on its top surface 53t for supporting the substrate. Chuck 53 may include an electrode. The electrode may use electrostatic forces to place the substrate securely in a fixed position on chuck 53.

The coupling ring 6 may include an outer electrode 7. The outer electrode 7 may be located below the focus ring FR and in the coupling ring 6. The outer electrode 7 may be spaced apart from the ring lifting pin 2. The external electrode 7 may include tungsten (W) and/or platinum (Pt). The external electrode 7 may be electrically connected to the second RF power source ED2 of fig. 1. The external electrode 7 may be supplied with a second RF power from a second RF power source ED2.

The focus ring FR may have a step difference on its top and bottom surfaces. For example, the top surface of the focus ring FR may include a first top surface TS1 and a second top surface TS2 at different levels. The bottom surface of the focus ring FR may include a first bottom surface BS1 and a second bottom surface BS2 at different levels. The first top surface TS1 may be located at a lower level than the second top surface TS2. The first bottom surface BS1 may be located at a lower level than the second bottom surface BS2. The inner side surface of the focus ring FR may be located between the first top surface TS1 and the first bottom surface BS 1. The outer side surface of the focus ring FR may be located between the second top surface TS2 and the second bottom surface BS2. In the description, the term "horizontal" may denote a height in the first direction D1.

The focus ring FR may be located on the electrostatic chuck structure 5, the coupling ring 6 and the outer ring 9. For example, the first bottom surface BS1 of the focus ring FR may be located at the same level as the level of the exposed top surface of the electrode body 511 and the level of the top surface of the coupling ring 6. The second bottom surface BS2 of the focus ring FR may be located on a portion of the outer ring 9.

The first top surface TS1 of the focus ring FR may be located at a level lower than that of the top surface 53t of the chuck 53. Thus, when the substrate is positioned on the electrostatic chuck structure 5, the substrate may not contact the first top surface TS1 of the focus ring FR. The second top surface TS2 of the focus ring FR may be located at a lower level than the level of the top surface 9t of the outer ring 9. However, the present disclosure is not limited thereto. For example, the first top surface TS1 of the focus ring FR may be located at the same level as the top surface 53t of the chuck 53 or at a level higher than the level of the top surface 53t of the chuck 53. The second top surface TS2 of the focus ring FR may be located at the same level as the top surface 9t of the outer ring 9 or at a level higher than the level of the top surface 9t of the outer ring 9.

A thermal pad may be located between the electrostatic chuck structure 5 and the focus ring FR. The thermal pad may act as an adhesive when transferring temperature. For example, the thermal pad may transfer the temperature of the electrostatic chuck structure 5 to the focus ring FR and may hold the focus ring FR stationary or substantially stationary. For example, the thermal pad may include a silicon-based material, carbon nanotubes, and/or a filler such as aluminum (Al), but the disclosure is not limited thereto.

The ring lifting pin 2 may be located below the focus ring FR. The ring lifting pin 2 may contact the second bottom surface BS2 of the focus ring FR. The ring lifting pin 2 may be located outside the external electrode 7. In a plan view, the ring lifting pin 2 may not overlap the external electrode 7. The ring lift pins 2 may vertically penetrate the coupling ring 6, the ground ring 8 and the outer ring 9. For example, the coupling ring 6, the ground ring 8 and the outer ring 9 may be provided with pin insertion holes (not denoted by reference numerals). The ring lifting pin 2 may be located in the pin insertion hole and may be vertically movable in the pin insertion hole.

Fig. 3 is a diagram illustrating a focus ring according to some embodiments of the present disclosure. Fig. 4 is a plan view illustrating a focus ring according to some embodiments of the present disclosure.

Referring to fig. 3 and 4, the focus ring FR may be a rotating body having a central axis CA extending in the first direction D1. The inner side surface of the focus ring FR may be directed towards the central axis CA. The inner side surface of the focus ring FR may define a space through which the central axis CA passes. The outer surface of the focus ring FR may be directed away from the central axis CA. The inner diameter of the focus ring FR may indicate the distance between the inner side surfaces of the focus ring FR when passing through the central axis CA. The outer diameter of the focus ring FR may indicate the distance between the outer side surfaces of the focus ring FR when passing through the central axis CA. For example, the distance between the central axis CA and the inner side surface of the focus ring FR may be about half the inner diameter of the focus ring FR. The distance between the central axis CA and the outer side surface of the focus ring FR may be about half the outer diameter of the focus ring FR.

The substrate elevating pin 4 may be located in a space through which the central axis CA passes. The substrate lifting pins 4 may not overlap with the focus ring FR in a plan view. Three substrate lift pins 4 may be provided. The three substrate lift pins 4 may form three apexes of a triangle. In this configuration, an angle of about 120 ° may be formed between two adjacent substrate lift pins 4 of the three substrate lift pins 4.

The ring lifting pin 2 may be located below the focus ring FR. For example, the ring lifting pin 2 may be positioned closer to the outer side surface of the focus ring FR than the inner side surface of the focus ring FR. Three ring lifting pins 2 may be provided. The three ring lifting pins 2 may form three apexes of a triangle. In this configuration, an angle of about 120 ° may be formed between two adjacent ring lift pins 2 of the three ring lift pins 2. Thus, the arrangement of the three ring lift pins 2 may be similar to the arrangement of the three substrate lift pins 4.

However, the present disclosure is not limited thereto. For example, the number of substrate lift pins 4 and the angle between the substrate lift pins 4 may vary. Furthermore, the number of ring lift pins 2 and the angle between the ring lift pins 2 may vary greatly. Therefore, the substrate lift pins 4 and the ring lift pins 2 may be different from each other in arrangement.

Fig. 5, 6, 7, 8, and 9 are enlarged views of portion B shown in fig. 2, illustrating electrostatic chuck structures and focus rings according to some embodiments of the present disclosure.

In the descriptions of fig. 5 to 9, descriptions of the same components as those described with reference to fig. 1 and 2 may be omitted.

Referring to fig. 5, the focus ring FR may have an inner side surface IS located between the first top surface TS1 and the first bottom surface BS1. The inner side surface IS of the focus ring FR may include a first inner side surface IS1 and a second inner side surface IS2.

The first inner side surface IS1 may be perpendicular to the first top surface TS1. Accordingly, an angle of about 90 ° may be formed between the first inner side surface IS1 and the first top surface TS1. For example, the first inner side surface IS1 may be parallel to the first direction D1, and an angle of about 0 ° may be formed between the first inner side surface IS1 and the first direction D1.

The second inner side surface IS2 may extend from the first inner side surface IS 1. For example, the second inner side surface IS2 may contact the first inner side surface IS1 and be located between the first inner side surface IS1 and the first bottom surface BS1. The first and second inside surfaces IS1 and IS2 may share the circumference of a circle at the contact point therebetween. The second inside surface IS2 may be at an angle θ to the first direction D1 (as described herein, the angle formed with respect to the first direction D1 may indicate the angle formed with respect to a line (arbitrary or otherwise) corresponding to the first direction D1). For example, the angle θ between the second inside surface IS2 and the first direction D1 may be different from the angle between the first inside surface IS1 and the first direction D1. The second inside surface IS2 may not be parallel to the first direction D1. The second inside surface IS2 may not be perpendicular to the first top surface TS1 and the first bottom surface BS1. An acute angle may be given as the angle θ between the second inside surface IS2 and the first direction D1. For example, the angle θ between the second inside surface IS2 and the first direction D1 may be greater than about 0 ° and equal to or less than about 5 °, but the present invention IS not limited thereto.

The first top surface TS1 may have a first inner diameter R1. The first bottom surface BS1 may have a second inner diameter R2. The first inner diameter R1 may be smaller than the second inner diameter R2. For example, the second inner diameter R2 of the focus ring FR may be larger than the first inner diameter R1 of the focus ring FR such that a distance from the central axis CA of the focus ring FR to a surface corresponding to the first inner diameter R1 is smaller than a distance from the central axis CA of the focus ring FR to a surface corresponding to the second inner diameter R2. The first top surface TS1 may be closer to the electrostatic chuck structure 5 than the first bottom surface BS 1. For example, the difference between the first inner diameter R1 and the second inner diameter R2 may be in a range between about 0.01mm to about 0.5mm, but the present invention is not limited thereto.

The first distance L1 may be defined to indicate a distance between the first inner side surface IS1 and the side surface 5s of the electrostatic chuck structure 5. The distance between the second inner side surface IS2 and the side surface 5s of the electrostatic chuck structure 5 may increase in a direction from the first top surface TS1 toward the first bottom surface BS 1. The second distance L2 may be defined to indicate an average distance between the second inner side surface IS2 and the side surface 5s of the electrostatic chuck structure 5. The first distance L1 may be smaller than the second distance L2. For example, the first inner side surface IS1 may be closer to the side surface 5s of the electrostatic chuck structure 5 than the second inner side surface IS 2. A free space S may be provided between the second inner side surface IS2 and the side surface 5S of the electrostatic chuck structure 5.

Referring to fig. 6, the first inner side surface IS1 may have a shape protruding toward the side surface 5s of the electrostatic chuck structure 5. For example, the first inner side surface IS1 may have a shape protruding toward the central axis CA of fig. 3. The distance between the first inner side surface IS1 and the side surface 5s of the electrostatic chuck structure 5 may increase in a direction from the first top surface TS1 toward the first bottom surface BS 1.

The second inside surface IS2 may extend downward from the first inside surface IS1, and an angle θ may be formed between the second inside surface IS2 and the first direction D1. For example, the second inside surface IS2 may not be parallel to the first direction D1. Accordingly, the angle θ between the second inside surface IS2 and the first direction D1 may be different from the angle between the first inside surface IS1 and the first direction D1. An acute angle may be given as the angle θ between the second inside surface IS2 and the first direction D1. For example, the angle θ between the second inside surface IS2 and the first direction D1 may be greater than about 0 ° and equal to or less than about 5 °, but the present invention IS not limited thereto.

The point at which the first and second inside surfaces IS1 and IS2 contact each other may have a third inner diameter R3. The third inner diameter R3 may be greater than the first inner diameter R1 (i.e., greater distance from the central axis CA of the focus ring FR). The third inner diameter R3 may be smaller than the second inner diameter R2. For example, the third inner diameter R3 may be located between the first inner diameter R1 and the second inner diameter R2.

Alternatively, the second inside surface IS2 may be parallel to the first direction D1. For example, the second inside surface IS2 may form an angle of about 0 ° with the first direction D1. In this case, the second inner diameter R2 may be substantially the same as the third inner diameter R3.

Referring to fig. 7, the inner side surface IS of the focus ring FR may further include a third inner side surface IS3. The third inside surface IS3 may be located between the first inside surface IS1 and the second inside surface IS2. For example, the third inner side surface IS3 may extend downward from the first inner side surface IS1, and the second inner side surface IS2 may extend downward from the third inner side surface IS3. The first and third inside surfaces IS1 and IS3 may share the circumference of one circle, and the third and second inside surfaces IS3 and IS2 may share the circumference of another circle.

The first and second inside surfaces IS1 and IS2 may be parallel to the first direction D1. For example, the first and second inner side surfaces IS1 and IS2 may be perpendicular to the first top surface TS1 or the first bottom surface BS1. The first inner side surface IS1 may be parallel to the second inner side surface IS2. The third inside surface IS3 may form an angle θ with the first direction D1. The third inside surface IS3 may not be parallel to the first direction D1. An acute angle may be given as the angle θ between the third inner side surface IS3 and the first direction D1. For example, the angle θ between the third inside surface IS3 and the first direction D1 may be greater than about 0 ° and equal to or less than about 5 °. However, the present disclosure is not limited thereto. For example, the second inside surface IS2 may not be parallel to the first direction D1, and the angle formed by the second inside surface IS2 and the first direction D1 may be different from the angle formed by the third inside surface IS3 and the first direction D1.

The first inner side surface IS1 may be closer to the side surface 5s of the electrostatic chuck structure 5 than the second inner side surface IS2 and the third inner side surface IS 3. The second inner side surface IS2 may be farther from the side surface 5s of the electrostatic chuck structure 5 than the first inner side surface IS1 and the third inner side surface IS 3.

Referring to fig. 8, the third inner side surface IS3 may have a shape protruding toward the side surface 5s of the electrostatic chuck structure 5. For example, the third inner side surface IS3 may have a shape protruding toward the central axis CA of fig. 3. The distance between the third inner side surface IS3 and the side surface 5s of the electrostatic chuck structure 5 may increase in a direction from the first top surface TS1 toward the first bottom surface BS 1.

The second inside surface IS2 may form an angle θ with the first direction D1. For example, the second inside surface IS2 may not be parallel to the first direction D1. The angle θ between the second inside surface IS2 and the first direction D1 may be different from the angle between the first inside surface IS1 and the first direction D1. An acute angle may be given as the angle θ between the second inside surface IS2 and the first direction D1. For example, the angle θ between the second inside surface IS2 and the first direction D1 may be greater than about 0 ° and equal to or less than about 5 °, but the present invention IS not limited thereto.

The point at which the second inside surface IS2 and the third inside surface IS3 contact each other may have a third inner diameter R3. The third inner diameter R3 may be greater than the first inner diameter R1 and less than the second inner diameter R2.

Alternatively, the second inside surface IS2 may be parallel to the first direction D1. For example, zero degrees may be given as the angle θ between the second inside surface IS2 and the first direction D1. In this case, the third inner diameter R3 may be substantially the same as the second inner diameter R2.

Referring to fig. 5 to 8, the first inner diameter R1 may be smaller than the second inner diameter R2. The first top surface TS1 may be closer to the side surface 5s of the electrostatic chuck structure 5 than the first bottom surface BS 1. Further, the first inner side surface IS1 may be closer to the electrostatic chuck structure 5 than the second inner side surface IS 2. The distance between the first inner side surface IS1 and the side surface 5s of the electrostatic chuck structure 5 may be smaller than the distance between the second inner side surface IS2 and the side surface 5s of the electrostatic chuck structure 5. Because the upper portion of the focus ring FR is closer to the electrostatic chuck structure 5 than the lower portion of the focus ring FR, the focus ring FR can be prevented from being biased in one direction of the electrostatic chuck structure 5. For example, the first inner side surface IS1 may serve as an auxiliary tool for aligning the focus ring FR and the electrostatic chuck structure 5. Accordingly, the focus ring FR of the present disclosure may be configured such that its center axis CA is aligned with the center of the electrostatic chuck structure 5. Accordingly, in a semiconductor manufacturing method to be described below, plasma can be uniformly generated on a substrate, and characteristic variation of a semiconductor device in the substrate can be improved.

In addition, a free space S may be provided between the focus ring FR and the electrostatic chuck structure 5. For example, a free space S may be provided between the second inner side surface IS2 and the side surface 5S of the electrostatic chuck structure 5. In a semiconductor manufacturing method, which will be described below, a semiconductor process may be performed at a high temperature, and thus the focus ring FR may undergo thermal expansion during the semiconductor manufacturing process. The free space S between the focus ring FR and the electrostatic chuck structure 5 may be a space that provides for thermal expansion of the focus ring FR. Therefore, the focus ring FR can be prevented from being damaged due to thermal expansion.

Further, the first inner side surface IS1 may be perpendicular or substantially perpendicular to the first top surface TS1. For example, the first inner side surface IS1 may form an angle of about 90 ° with the first top surface TS1. Since the angle between the first inner side surface IS1 and the first top surface TS1 IS not an acute angle equal to or less than about 60 °, there may be no sharp point where the first top surface TS1 and the first inner side surface IS1 of the focus ring FR contact each other. Accordingly, a cutting accident can be prevented by the focus ring FR, and RF power may not be concentrated to prevent an arcing phenomenon of the focus ring FR.

Referring to fig. 9, an inner side surface IS of the focus ring FR may be located between the first top surface TS1 and the first bottom surface BS1, and may include a first inner side surface IS1 and a second inner side surface IS2. The second inner side surface IS2 may extend from the first inner side surface IS1, and the first inner side surface IS1 and the second inner side surface IS2 may share a circumference of a circle at a contact point therebetween.

The first inside surface IS1 may form an angle θ with the first direction D1. For example, the first inner side surface IS1 may not be parallel to the first direction D1. An acute angle may be given as the angle θ between the first inner side surface IS1 and the first direction D1. For example, the angle θ between the first inside surface IS1 and the first direction D1 may be greater than about 0 ° and equal to or less than about 5 °, but the present invention IS not limited thereto. Accordingly, the distance between the first inner side surface IS1 and the side surface 5s of the electrostatic chuck structure 5 may decrease in a direction from the first top surface TS1 toward the first bottom surface BS 1. The first distance L1 may be defined to indicate an average distance between the first inner side surface IS1 and the side surface 5s of the electrostatic chuck structure 5.

The second inner side surface IS2 may be parallel to the first inner side surface IS1. Accordingly, a uniform distance can be provided between the second inner side surface IS2 and the side surface 5s of the electrostatic chuck structure 5. The second distance L2 may be defined to indicate a distance between the second inner side surface IS2 and the side surface 5s of the electrostatic chuck structure 5. The second distance L2 may be smaller than the first distance L1.

The first top surface TS1 may have a first inner diameter R1. The first bottom surface BS1 may have a second inner diameter R2. The first inner diameter R1 may be greater than the second inner diameter R2. For example, the difference between the first inner diameter R1 and the second inner diameter R2 may be in the range of between about 0.01mm to about 0.5mm,

however, the present disclosure is not limited thereto. Various examples of a focus ring FR having a first inner diameter R1 greater than a second inner diameter R2 may be provided. For example, at least one focus ring FR described in fig. 5 to 8 may have a vertically symmetrical shape.

Fig. 10 is an enlarged view of portion C shown in fig. 2, illustrating a focus ring according to some embodiments of the present disclosure.

In the description of fig. 10, the description of the same components as those described with reference to fig. 1 and 2 may be omitted.

Referring to fig. 10, the focus ring FR may have an outer side surface OS located between the second top surface TS2 and the second bottom surface BS2. The outer side surface OS of the focus ring FR may include a first outer side surface OS1 and a second outer side surface OS2.

The first outer side surface OS1 may be perpendicular to the second top surface TS2 or the second bottom surface BS2. For example, an angle of about 90 ° may be formed between the first outer side surface OS1 and the second top surface TS2 or the second bottom surface BS2. In this configuration, the first outside surface OS1 may be parallel to the first direction D1, and an angle of about 0 ° may be formed between the first outside surface OS1 and the first direction D1. Accordingly, a constant distance can be provided between the first outer side surface OS1 and the side surface of the outer ring 9.

The second outside surface OS2 may extend downward from the first outside surface OS 1. For example, the second outside surface OS2 may contact the first outside surface OS1 and be located between the first outside surface OS1 and the second bottom surface BS2. The first and second outer side surfaces OS1 and OS2 may share the circumference of a circle at the contact point therebetween. The second outside surface OS2 may form an angle θ with the first direction D1. For example, the angle θ between the second outside surface OS2 and the first direction D1 may be different from the angle between the first outside surface OS1 and the first direction D1. The second outside surface OS2 may not be parallel to the first direction D1. The second outer side surface OS2 may not be perpendicular to the second top surface TS2 and the second bottom surface BS2. Accordingly, the distance between the second outer side surface OS2 and the outer ring 9 can be increased in the downward direction. An acute angle may be given as the angle θ between the second outside surface OS2 and the first direction D1. For example, the angle θ between the second outer side surface OS2 and the first direction D1 may be greater than about 0 ° and equal to or less than about 5 °, but the present invention is not limited thereto.

The second top surface TS2 may have a first outer diameter R4. The second bottom surface BS2 may have a second outer diameter R5. The first outer diameter R4 may be greater than the second outer diameter R5. The second top surface TS2 may be closer to the outer ring 9 than the second bottom surface BS2. For example, the first outer side surface OS1 may be closer to the outer ring 9 than the second outer side surface OS 2.

However, the present disclosure is not limited thereto. According to the present disclosure, there may be variations in the shape of the outer side surface OS of the focus ring FR. For example, the outer side surface OS of the focus ring FR may have a shape laterally symmetrical to the shape of the inner side surface IS of the focus ring FR described in fig. 5 to 8.

Fig. 11 is a cross-sectional view illustrating a substrate processing apparatus according to some embodiments of the present disclosure. Fig. 12, 13 and 14 are enlarged views of a portion D shown in fig. 11, illustrating an electrostatic chuck and a focus ring according to some embodiments of the present disclosure.

Referring to fig. 11, a substrate processing apparatus 1 may be provided. The substrate W may be located in the substrate processing apparatus 1. The substrate W may be positioned and secured to the electrostatic chuck structure 5. The diameter of the electrostatic chuck structure 5 may be different from the diameter of the electrostatic chuck structure 5 depicted in fig. 1. Other configurations other than the electrostatic chuck structure 5 may be substantially the same as the configuration described in fig. 1.

Fig. 12 shows the substrate W of fig. 11 before it is positioned on the electrostatic chuck structure 5. The electrostatic chuck structure 5 may include a plasma electrode 51 and a chuck 53 on the plasma electrode 51. Plasma electrode 51 may include electrode body 511 and plateau 513 on electrode body 511. The electrode body 511, plateau 513, and chuck 53 of the electrostatic chuck structure 5 may have substantially the same functions as those described in fig. 2. For example, the plasma electrode 51 may be a lower electrode of the substrate processing apparatus 1. Chuck 53 may use electrostatic forces to hold substrate W.

Both the electrostatic chuck structure 5 and the chuck 53 may have a cylindrical shape. Chuck 53 may have a circular shape in plan view. The distance between the central axis CA and the side surface 53s of the chuck 53 may be a radius R6 of the chuck 53. The diameter of chuck 53 may indicate the distance between side surface 53s of chuck 53 and the opposite side surface 53s of chuck 53 as it passes through central axis CA. The plateau 513 located below the chuck 53 may have a diameter substantially the same as the diameter of the chuck 53. The side surfaces of plateau 513 may be aligned with side surfaces 53s of chuck 53. For example, chuck 53 may have a diameter of about 298.6mm to about 300 mm.

The focus ring FR may be located on the electrode body 511 and the side surface 53s of the chuck 53. The focus ring FR may be spaced apart from the chuck 53 in a horizontal direction (e.g., the second direction D2). The focus ring FR may include a first top surface TS1 and a second top surface TS2 at different levels. The focus ring FR may include a first inner side surface IS1 and a second inner side surface IS2 at different angles from the first direction D1. The first inner side surface IS1 may contact the first top surface TS1 and be parallel to the first direction D1. The second inside surface IS2 may extend downward and may not be parallel to the first direction D1. The second inner side surface IS2 may be at an acute angle to the first direction D1. For example, the focus ring FR may have a shape substantially the same as or similar to the shape described in fig. 5 to 8.

Fig. 13 shows a state in which the substrate W is positioned on the electrostatic chuck structure 5, and plasma PL is formed in the substrate processing apparatus 1. An edge region of the substrate W is shown. In plan view, the edge region of the substrate W may surround or at least partially surround a central region of the substrate W. The focus ring FR may be in an initial state before the semiconductor process is performed.

The substrate W may be located on the top surface 53t of the chuck 53 and contact the chuck 53. The substrate W may have a circular shape in a plan view. The distance between the central axis CA and the side surface Ws of the substrate W may be a radius R7 of the substrate W. The radius R7 of the substrate W may be the same as the radius R6 of the chuck 53. For example, the diameter of the substrate W may be substantially the same as the diameter of the chuck 53. Accordingly, the side surface Ws of the substrate W may be aligned with the side surface 53s of the chuck 53. Since the substrate W does not allow the top surface 53t of the chuck 53 to be exposed to the plasma PL, the chuck 53 can be prevented from being damaged due to the plasma PL.

According to some embodiments, the diameter of the substrate W may be greater than the diameter of the chuck 53. For example, the diameter difference between the substrate W and the chuck 53 may be equal to or less than about 1.4mm. Even in this case, since the substrate W entirely covers the top surface 53t of the chuck 53, the chuck 53 can be prevented from being damaged due to the plasma PL.

Plasma PL may be formed on substrate W and focus ring FR. The plasma PL may be formed by the process gas and an electric field generated by the first RF power source ED1 of fig. 11. The plasma sheath on the substrate W may have a first thickness T1. The plasma sheath on the focus ring FR may have a second thickness T2. The first thickness T1 and the second thickness T2 may be substantially the same as each other. In this specification, the plasma sheath may be a region in which the number of cations and neutrons is relatively greater than the number of electrons.

The distance between the top surface Wt of the substrate W and the plasma PL1 on the substrate W may be a first thickness T1 of the plasma sheath on the substrate W. The distance between the second top surface TS2 of the focus ring FR and the plasma PL2 on the focus ring FR may be the second thickness T2 of the plasma sheath on the focus ring FR. For example, the distance between the top surface Wt of the substrate W and the plasma PL1 on the substrate W may be substantially the same as the distance between the second top surface TS2 of the focus ring FR and the plasma PL2 on the focus ring FR. In addition, the top surface Wt of the substrate W may also be located on the same plane as the second top surface TS2 of the focus ring FR. Thus, plasma PL having a constant level can be formed. For example, the plasma PL may be formed without a step difference.

The plasma PL1 on the substrate W may have a constant height in the first direction D1. Accordingly, ions present in the plasma PL1 on the substrate W may move onto the substrate W in parallel to the first direction D1. The plasma PL2 on the focus ring FR may have a constant height in the first direction D1, so that ions present in the plasma PL2 on the focus ring FR may move onto the focus ring FR parallel to the first direction D1.

Fig. 14 shows a state in which the substrate W is positioned on the electrostatic chuck structure 5, and plasma PL is formed in the substrate processing apparatus 1. An edge region of the substrate W is shown. In plan view, the edge region of the substrate W may surround or at least partially surround a central region of the substrate W. The focus ring FR may be in a state after the semiconductor process is performed a plurality of times. The semiconductor process may provide the focus ring FR with an etched top surface. For example, the focus ring FR may have a third top surface TS3 formed when the plasma PL etches the second top surface TS2 of the focus ring FR shown in fig. 13. The third top surface TS3 of the focus ring FR may be located at a level lower than that of the second surface TS2 of the focus ring FR.

Plasma PL may be formed on substrate W and focus ring FR. The plasma sheath on the substrate W may have a first thickness T1. The plasma sheath on the focus ring FR may have a second thickness T2. The first thickness T1 and the second thickness T2 may be substantially the same as each other. The distance between the top surface Wt of the substrate W and the plasma PL1 on the substrate W may be a first thickness T1 of the plasma sheath on the substrate W. The distance between the third top surface TS3 of the focus ring FR and the plasma PL2 on the focus ring FR may be the second thickness T2 of the plasma sheath on the focus ring FR. For example, the distance between the top surface Wt of the substrate W and the plasma PL1 on the substrate W may be substantially the same as the distance between the third top surface TS3 of the focus ring FR and the plasma PL2 on the focus ring FR. In addition, the top surface Wt of the substrate W may be located at a level higher than that of the third top surface TS3 of the focus ring FR. Plasma PL1 on substrate W may be at a higher level than the level of plasma PL2 on focus ring FR. For example, the plasma PL may have a step difference in the first direction D1.

The top surface of the focus ring FR may have a reduced level and the top surface Wt of the substrate W may have a constant level as the semiconductor process is performed a plurality of times. For example, when a semiconductor process is performed, the top surface of the focus ring FR may be lower than the top surface Wt of the substrate W. The plasma PL2 may be formed at a lowered position on the focus ring FR. For example, plasma PL1 on substrate W and plasma PL2 on focus ring FR have different heights, and tilted plasma PL3 may be formed between plasma PL1 on substrate W and plasma PL2 on focus ring FR. The tilted plasma PL3 may be spaced apart from the chuck 53 in the second direction D2. In plan view, the tilted plasma PL3 may not overlap with the chuck 53.

The inclined plasma PL3 may have a variable height in the first direction D1. The height of the inclined plasma PL3 in the first direction D1 may increase as the distance from the substrate W decreases. Accordingly, ions present in the tilted plasma PL3 may move at an angle with respect to the first direction D1. In this case, ions present in the tilted plasma PL3 may move in the tilt direction.

The chuck 53 of the present disclosure may have a diameter substantially the same as that of the substrate W, and the side surface 53s of the chuck 53 may be aligned with the side surface Ws of the substrate W. The angled plasma PL3 may be positioned spaced apart from the chuck 53 in the second direction D2 and thus may be positioned spaced apart from the substrate W in the second direction D2. In plan view, the tilted plasma PL3 may not overlap with the substrate W. Therefore, ions having an oblique direction do not move onto the top surface Wt of the substrate W. For example, ions moving parallel to the first direction D1 may reach all edge and center regions of the substrate W. In this case, the semiconductor pattern on the edge region may be formed to have the same shape as the semiconductor pattern on the center region. Accordingly, the distribution of the semiconductor patterns in the substrate W can be improved.

In addition, a temperature control gas may also be supplied from the electrostatic chuck structure 5 toward the gap between the top surface 53t of the chuck 53 and the bottom surface of the substrate W. The temperature control gas may be a medium that transfers the temperature of the electrostatic chuck structure 5 to the substrate W. For example, the temperature control gas may include helium (He). Since the chuck 53 of the present disclosure has substantially the same diameter as that of the substrate W, the temperature control gas can reach even the edge region of the substrate W, so that the temperature of the edge region can be controlled. Accordingly, the distribution of the semiconductor patterns in the substrate W can be improved.

Fig. 15 is a flow chart illustrating a semiconductor manufacturing method according to some embodiments of the present disclosure.

Referring to fig. 15, a semiconductor manufacturing method may be provided. The semiconductor manufacturing method may refer to a method of manufacturing a semiconductor device using the substrate processing apparatus 1 described in fig. 1 and the focus ring FR described in fig. 1 to 10. The semiconductor manufacturing method may include loading a substrate in operation S10, performing a semiconductor process in operation S20, removing the substrate in operation S30, and replacing a focus ring in operation S40. Referring to fig. 16 to 22, the semiconductor manufacturing method of fig. 15 will be described in detail.

Fig. 16, 17, 18, 19, and 20 are cross-sectional views illustrating the semiconductor manufacturing method of fig. 15 according to some embodiments of the present disclosure. Fig. 21 and 22 are enlarged views of portion E in the illustration of fig. 20, showing a focus ring according to some embodiments of the present disclosure.

Referring to fig. 16 and 17, the substrate loading operation S10 may include: placing the substrate W on the substrate lift pins 4, the substrate lift pins 4 being raised (e.g., raised) by the substrate lift pin mechanism WPM; placing the substrate W on the electrostatic chuck structure 5 by allowing the substrate lift pins 4 to descend (e.g., by lowering the substrate lift pins 4) by the substrate lift pin mechanism WPM; and securing the substrate W to the electrostatic chuck structure 5. The substrate W may include a silicon (Si) wafer, but the present invention is not limited thereto.

For example, a robot arm or the like may introduce the substrate W into the process chamber CH. When the robot arm introduces the substrate W into the process chamber CH, the substrate lift pin mechanism WPM may drive the substrate lift pins 4 to rise in the first direction D1. For example, the substrate lift pins 4 may be raised to contact the bottom surface of the substrate W, and the substrate W may also be raised in the first direction D1. The substrate W may be placed on the raised substrate lift pins 4, and the substrate W and the robot arm may be spaced apart from each other. Thereafter, the robot arm may be removed from the interior of the process chamber CH.

The substrate lift pin mechanism WPM may drive the substrate lift pins 4 to descend in the first direction D1. Accordingly, the substrate W may be lowered in the first direction D1 and may be placed on the electrostatic chuck structure 5. When the substrate W is placed on the electrostatic chuck structure 5, the chuck of the electrostatic chuck structure 5 (see 53 of fig. 2) can fix the substrate W by using the electrostatic force supplied from the chuck electrode.

The substrate loading step S10 may include aligning a side surface of the electrostatic chuck structure 5 with a side surface of the substrate W. Referring to fig. 11 to 14, the diameter of the chuck 53 of the electrostatic chuck structure 5 may be substantially the same as the diameter of the substrate W. Thus, when a substrate W is positioned on the chuck 53 of the electrostatic chuck structure 5, the side surface Ws of the substrate W may be aligned with the side surface 53s of the chuck 53.

Referring to fig. 18, the semiconductor process operation S20 may include supplying a process gas to the process chamber CH, supplying a first RF power to a plasma electrode (see 51 of fig. 2), and supplying a second RF power to an outer electrode (see 7 of fig. 2).

Supplying the process gas to the process chamber CH may include allowing the gas supply portion GS to supply the process gas to the process chamber CH (i.e., supply the process gas to the process chamber CH). The process gas may move to the substrate W through the gas inlet GI, the distribution space DH, and the distribution holes GH of the showerhead SH. Thereafter, the process gas may move downward in the process chamber CH through the slit CRe of the confinement ring CR, thereby being discharged outward. In a plan view, the distribution holes GH of the head SH may be two-dimensionally arranged. Thus, the process gas can be uniformly supplied over the substrate W.

The supply of the first RF power to the plasma electrode 51 may be performed by the first RF power source ED 1. The plasma electrode 51 to which the first RF power is applied may form an electric field in a space on the substrate W. The electric field and the process gas may form a plasma PL in a space above the substrate W. For example, the semiconductor process may be a semiconductor process using plasma PL, such as an etching process using plasma PL. Thus, the plasma PL may partially etch the top surface of the substrate W.

The supply of the second RF power to the outer electrode 7 may be performed by a second RF power source ED 2. The second RF power may be different from the first RF power. The first RF power may have a frequency of about 60MHz and the second RF power may have a frequency of about 400kHz, but the disclosure is not limited thereto. The second RF power applied to the external electrode 7 may form an electric field in a space above the external electrode 7. Accordingly, the behavior of the plasma PL formed in the space above the external electrode 7 can be controlled. Thus, there may be a reduced difference or no difference between the center portion and the edge portion of the substrate W.

Referring back to fig. 16, the substrate removing operation S30 may include removing an electrostatic force to fix the substrate W and transferring the substrate W from the process chamber CH.

For example, the electrostatic force may be removed to eliminate adhesion between the electrostatic chuck structure 5 and the substrate W. Thereafter, the substrate lift pin mechanism WPM may drive the substrate lift pins 4 to rise in the first direction D1 to separate the substrate W and the electrostatic chuck structure 5 from each other. The robot arm may transfer the raised substrate W from the process chamber CH. For example, the substrate removing operation S30 may be performed in a reverse order to that of the substrate loading operation S10.

Referring to fig. 19 and 20, the replacing operation S40 may include raising the focus ring FR, transferring the focus ring FR outward from the process chamber CH, transferring a new focus ring FR inward into the process chamber CH, and lowering the focus ring FR.

The raising of the focus ring FR can be performed by the ring lifter pins 2 and the ring lifter pin mechanism RPM. For example, the ring lifter pin mechanism RPM may drive the ring lifter pin 2 to rise in the first direction D1. As described in fig. 2, the ring lifting pin 2 may contact the second bottom surface BS2 of the focus ring FR. Accordingly, the ring elevating pins 2 may elevate and elevate the focus ring FR to outwardly expose the side surface of the electrostatic chuck structure 5, the top surface of the coupling ring 6, and the side surface of the outer ring 9.

The transfer of the focus ring FR out of the process chamber CH may be performed by a robot arm. For example, when the robot arm is introduced into the process chamber CH, the ring lift pin mechanism RPM may drive the ring lift pins 2 to descend in the first direction D1. Thus, the focus ring FR may be positioned on the robotic arm. The robotic arm may then transfer the focus ring FR outward from the process chamber CH.

The inward transfer of the focus ring FR into the process chamber CH may be performed by a robotic arm. For example, a new focus ring FR may be positioned on the robot outside the process chamber CH. The robotic arm may then transfer the new focus ring FR inwardly into the process chamber CH. The ring lifter pin mechanism RPM may drive the ring lifter pins 2 to rise in the first direction D1. Accordingly, the new focus ring FR can be lifted up in the first direction D1 while contacting the ring lifting pins 2. For example, the new focus ring FR may be spaced apart from the robotic arm. Thereafter, the robot arm may be removed from the interior of the process chamber CH.

The transfer of the focus ring FR out of the process chamber CH and the transfer of the focus ring FR in into the process chamber CH may be similar to the substrate removal operation S30 and the substrate loading operation S10, respectively.

Referring to fig. 20-22, lowering the focus ring FR may include allowing at least a portion of the second inner side surface IS2 of the focus ring FR to contact the electrostatic chuck structure 5 (i.e., contact at least a portion of the focus ring FR and the second inner side surface IS 2), and allowing the center of the electrostatic chuck structure 5 to be aligned with the center axis CA of the focus ring FR (i.e., aligning the center axis CA of the focus ring FR with the center of the electrostatic chuck structure 5).

For example, the focus ring FR may be located on the ring lift pin 2. The ring lifter pin mechanism RPM may drive the ring lifter pins 2 to descend in the first direction D1. Accordingly, the focus ring FR may descend in the first direction D1. When the focus ring FR descends in the first direction D1, the first bottom surface BS1 may be located at a level lower than that of the top surface 53t of the chuck 53. In this case, the focus ring FR may have a central axis CA that is not aligned with the center of the electrostatic chuck structure 5. For example, in a plan view, the distance between the inner side surface IS of the focus ring FR and the side surface 5s of the electrostatic chuck structure 5 may not be constant in all directions. Accordingly, when the focus ring FR IS lowered in the first direction D1, at least a portion of the inner side surface IS may contact the electrostatic chuck structure 5. For example, at least a portion of the second inner side surface IS2 may contact the electrostatic chuck structure 5 when the focus ring FR IS lowered in the first direction D1.

The second inside surface IS2 may not be parallel to the first direction D1. An angle θ may be set between the second inside surface IS2 and the first direction D1. An acute angle may be given as the angle θ between the second inside surface IS2 and the first direction D1. For example, the second inner side surface IS2 may be an inclined surface with respect to the first direction D1. Therefore, when the second inner side surface IS2 of the focus ring FR descends while contacting the electrostatic chuck structure 5, the focus ring FR may move in the second direction D2 or the opposite direction thereof. For example, the focus ring FR IS moved in the second direction D2 or the opposite direction thereof until the second inner side surface IS2 IS lower than the top surface 53t of the chuck 53. Accordingly, the center axis CA of the focus ring FR and the center of the electrostatic chuck structure 5 may be aligned with each other when the focus ring FR is moved in the second direction D2 or the opposite direction thereof.

Thereafter, the focus ring FR may be lowered until the first top surface TS1 of the focus ring FR is located at a level lower than that of the top surface 53t of the chuck 53. For example, when the replacement operation S40 is completed, the first top surface TS1 of the focus ring FR may be located at a level lower than that of the top surface 53t of the chuck 53.

According to some embodiments, the focus ring FR may be configured to include a plurality of members. For example, the focus ring FR may include a first ring and a second ring. In this case, the replacing operation S40 may include replacing the entire focus ring FR or a portion of the focus ring FR.

According to some embodiments, the replacement operation S40 may be performed after the substrate loading operation S10, the semiconductor process operation S20, and the substrate removing operation S30 are repeatedly performed a plurality of times. For example, a semiconductor process may be performed on a plurality of substrates W, and then the focus ring FR may be replaced.

According to the present disclosure, the center axis CA of the focus ring FR and the center of the electrostatic chuck structure 5 can be automatically aligned when the focus ring FR is lowered. For example, no auxiliary tool may be required in mounting the focus ring FR into the substrate processing apparatus 1. The focus ring FR and the electrostatic chuck structure 5 may be aligned with each other at constant intervals in all directions. Therefore, the focus ring FR can be replaced by using only the ring lift pins 2, the ring lift pin mechanism RPM, and the robot arm. For example, since only the focus ring FR is replaced while the process chamber CH maintains its internal environment, the standby time of the substrate processing apparatus 1 can be reduced to improve the yield.

In addition, since the focus ring FR and the electrostatic chuck structure 5 are automatically aligned with each other, the substrate W can be automatically aligned on the electrostatic chuck structure 5. For example, even though the diameter of the chuck 53 is substantially the same as the diameter of the substrate W, the substrate W may completely cover the top surface 53t of the chuck 53. Therefore, substantially the same effects as those described in fig. 13 and 14 can be obtained to improve the distribution in the substrate W.

According to the focus ring of the present disclosure, a substrate processing apparatus including the focus ring, and a semiconductor manufacturing method using the focus ring, the focus ring may include a top surface having a first inner diameter and a bottom surface having a second inner diameter. The first inner diameter may be smaller than the second inner diameter, so a top surface of the focus ring may be closer to the electrostatic chuck structure than a bottom surface of the focus ring. Thus, the central axis of the focus ring may be aligned with the central axis of the electrostatic chuck structure. Thus, the spacing between the focus ring and the electrostatic chuck structure may be uniform in all directions.

According to the focus ring, the substrate processing apparatus including the focus ring, and the semiconductor manufacturing method using the focus ring of the present invention, since the interval between the focus ring and the electrostatic chuck structure is uniform in all directions, the substrate can be accurately positioned on the electrostatic chuck structure. Accordingly, the electrostatic chuck structure may have the same diameter as the substrate, and the center region and the edge region of the substrate may undergo the semiconductor process under the same conditions. Thus, the distribution in the substrate can be improved.

According to the focus ring of the present disclosure, a substrate processing apparatus including the focus ring, and a semiconductor manufacturing method using the focus ring, the focus ring may have an inner side surface including a first inner side surface and a second inner side surface. The first inner side surface may be parallel to the vertical direction. The second inner side surface may extend downward and form an acute angle with the vertical direction. Accordingly, an arc phenomenon of the focus ring and accidents including injury to workers can be prevented. In addition, an empty space may be provided between the electrostatic chuck structure and the lower portion of the focus ring.

Each embodiment provided in the above description does not preclude the association with one or more features of other examples or other embodiments also or not provided herein but consistent with the present disclosure.

While the present disclosure has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the appended claims.

Claims

1. A substrate processing apparatus comprising:

the focusing ring is provided with a focusing ring,

wherein the focus ring comprises:

a central shaft extending in a first direction;

a top surface having a first inner diameter;

a bottom surface having a second inner diameter greater than the first inner diameter; and

an inner side surface between the top surface and the bottom surface, the inner side surface comprising a first inner side surface and a second inner side surface,

wherein the second inner side surface extends downward from the first inner side surface, and

wherein a first angle between the first inner side surface and a line corresponding to the first direction is different from a second angle between the second inner side surface and a line corresponding to the first direction.

2. The substrate processing apparatus of claim 1, wherein the first inside surface is parallel to the first direction, and

Wherein the second angle between the second inside surface and a line corresponding to the first direction is an acute angle.

3. The substrate processing apparatus of claim 2, the second angle being greater than 0 ° and equal to or less than 5 °.

4. The substrate processing apparatus of claim 1, wherein the first inner side surface has a shape protruding toward the central axis.

5. The substrate processing apparatus of claim 1, wherein the inner side surface of the focus ring further comprises a third inner side surface, and

wherein the third inside surface is between the first inside surface and the second inside surface.

6. The substrate processing apparatus of claim 1, wherein a difference between the first inner diameter and the second inner diameter is in a range of 0.01mm to 0.5 mm.

7. The substrate processing apparatus of claim 1, wherein the focus ring further comprises an outer side surface,

wherein the outer side surface comprises a first outer side surface and a second outer side surface extending from the first outer side surface,

wherein the first outer side surface is parallel to the first direction, and

wherein a third angle between the second outer surface and a line corresponding to the first direction is an acute angle.

8. A substrate processing apparatus comprising:

an electrostatic chuck structure including a chuck supporting a substrate; and

a focus ring on a side surface of the chuck and having a central axis extending in a first direction,

wherein the top surface of the focus ring has a first inner diameter,

wherein the bottom surface of the focus ring has a second inner diameter,

wherein the first inner diameter is smaller than the second inner diameter, and

wherein the diameter of the chuck is in the range of 298.6mm to 300 mm.

9. The substrate processing apparatus of claim 8, wherein a top surface of the focus ring is at a lower level than a top surface of the chuck.

10. The substrate processing apparatus of claim 8, wherein the focus ring comprises:

a first inner side surface between the top surface and the bottom surface; and

a second inner side surface extending from the first inner side surface, and

11. The substrate processing apparatus of claim 10, wherein the focus ring further comprises a third inside surface between the first inside surface and the second inside surface,

Wherein at least one of the first inner side surface, the second inner side surface, and the third inner side surface has a shape protruding toward the central axis.

12. A substrate processing apparatus comprising:

an electrostatic chuck structure;

a focus ring on the electrostatic chuck structure and having a central axis extending in a first direction; and

an outer ring at least partially surrounding the focus ring,

wherein the inner side surface of the focus ring comprises a first inner side surface and a second inner side surface,

wherein the second inner side surface contacts the first inner side surface, an

Wherein the first inner side surface is closer to the electrostatic chuck structure than the second inner side surface.

13. The substrate processing apparatus of claim 12, wherein a first angle between the first inner side surface and a line corresponding to the first direction is different from a second angle between the second inner side surface and a line corresponding to the first direction.

14. The substrate processing apparatus of claim 12, wherein the top surface of the focus ring has a first inner diameter,

wherein the bottom surface of the focus ring has a second inner diameter, and

Wherein the first inner diameter is smaller than the second inner diameter.

15. The substrate processing apparatus of claim 12, wherein the first interior side surface is parallel to the first direction, and

wherein the second inner side surface forms an acute angle with a line corresponding to the first direction.

16. The substrate processing apparatus of claim 12, wherein the inner side surface of the focus ring further comprises a third inner side surface, and

17. The substrate processing apparatus of claim 16, wherein at least one of the first inner side surface, the second inner side surface, and the third inner side surface has a shape that protrudes toward the electrostatic chuck structure.

18. The substrate processing apparatus of claim 16, wherein the first and second interior side surfaces are parallel to the first direction.

19. The substrate processing apparatus of claim 12, further comprising a ring lift pin extending in the first direction,

wherein the ring lift pins are below the focus ring.

20. The substrate processing apparatus of claim 12, further comprising:

A power supply connected to the electrostatic chuck structure;

the spray head is arranged on the electrostatic chuck structure; and

and a confinement ring between the electrostatic chuck structure and the showerhead.