CN117878106A - Silicon capacitor electrode structure and silicon capacitor - Google Patents
Silicon capacitor electrode structure and silicon capacitor Download PDFInfo
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- CN117878106A CN117878106A CN202410277887.2A CN202410277887A CN117878106A CN 117878106 A CN117878106 A CN 117878106A CN 202410277887 A CN202410277887 A CN 202410277887A CN 117878106 A CN117878106 A CN 117878106A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
- 239000010703 silicon Substances 0.000 title claims abstract description 76
- 230000000737 periodic effect Effects 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 28
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims description 21
- 238000003491 array Methods 0.000 abstract description 28
- 210000004027 cell Anatomy 0.000 description 98
- 238000009826 distribution Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000006399 behavior Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005325 percolation Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 210000002777 columnar cell Anatomy 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Abstract
The invention discloses a silicon capacitor electrode structure and a silicon capacitor, wherein in the silicon capacitor electrode structure, a plurality of groups of column element arrays distributed according to different periodic grids are manufactured on a substrate, and the plurality of groups of column element arrays are nested and combined, so that the surface area of the electrode structure is improved, the structural stability is improved, and the equivalent series resistance is reduced, so that the application requirement is met.
Description
Technical Field
The invention relates to the technical field of micro-nano, in particular to a silicon capacitor electrode structure and a silicon capacitor.
Background
In the micro-nano technology field, in the case of realizing large capacitance in application, the cost per square semiconductor substrate area and the demand for capacitance are increasing. To increase the capacitance density, the aspect ratio of the pillars, defined as the ratio of their length to the smallest cross-sectional dimension perpendicular to their length direction, may be increased. The strategy to increase the capacitance density is to increase the length of the pillars, or to decrease the cross-sectional size or footprint of the pillars, thereby placing more pillars on the same substrate area. However, circular cylinders with high aspect ratios are prone to fracture and/or toppling when subjected to shear forces, such as may occur during handling and/or processing, existing electrode designs often fail to meet the electrode surface area and structural stability requirements for specific applications, thereby limiting the field of application of the capacitor. Second, existing electrode designs, which are not reasonably arranged on a substrate, result in a high Equivalent Series Resistance (ESR) of the resulting electrode structure.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a silicon capacitor electrode structure and a silicon capacitor, which can improve the structural stability and reduce the equivalent series resistance while improving the surface area of the electrode structure by manufacturing a plurality of groups of column element arrays distributed according to different periodic grids on a substrate and nesting and combining the plurality of groups of column element arrays so as to meet the application requirements.
To achieve the above object, an embodiment of the present invention provides a silicon capacitor electrode structure, including a substrate, a first column cell array and a second column cell array. The substrate has a first surface. A first column cell array formed on a first surface of the substrate, the first column cell array including a plurality of first column cells distributed in a first periodic grid, each of the first column cells including first body portions a and B at both ends and first connection portions connecting the first body portions a and B, a center point of the first body portion a in the first column cell constituting a grid point of the first periodic grid; a second cylindrical element array formed on the first surface of the substrate, the second cylindrical element array including a plurality of second cylindrical elements distributed in a second periodic grid, each of the second cylindrical elements including second body portions a and B at both ends and second connection portions connecting the second body portions a and B, a center point of the second body portion a in the second cylindrical element constituting a grid point of the second periodic grid; any lattice point of the first periodic lattice is not overlapped with any lattice point of the second periodic lattice, and the first column element and the second column element are arranged in a non-contact manner.
In one or more embodiments of the present invention, on the first surface, a straight line where a central line of the first body portion a and the first body portion B in the first column element is located is parallel to or intersects with a straight line where a central line of the second body portion a and the second body portion B in the second column element is located.
In one or more embodiments of the present invention, the second cylindrical element has the same size as the first cylindrical element, and is moved by the first cylindrical element and rotated about the center point of its first body portion a by α 1 And forming after the angle.
In one or more embodiments of the invention, the α 1 The angle ranges from 0 DEG to 180 deg.
In one or more embodiments of the invention, the α 1 The angle is 90 °.
In one or more embodiments of the invention, the first periodic grid comprises a parallelogram grid having cells ABCD; the second periodic grid comprises a parallelogram grid having cells a 'B' C 'D'; the parallelogram grid with cells ABCD is the same size as the parallelogram grid with cells a 'B' C 'D'.
In one or more embodiments of the invention, side AB is parallel to side a 'B', and side AC is parallel to side a 'C'.
In one or more embodiments of the present invention, the center point of the second body part a in each of the second column elements is located on the center point of one cell of the first periodic grid formed by taking the center point of the first body part a in the first column element as a lattice point.
In one or more embodiments of the present invention, the first body portion a is configured to have a diameter R A1 The first body portion B is configured to have a diameter R B1 The first connecting part has a length R perpendicular to the central line of the first main body part A and the first main body part B 1 Wherein R is A1 =R B1 =R 1 The method comprises the steps of carrying out a first treatment on the surface of the The second main body A is configured to have a diameter R A2 The second body portion B is configured to have a diameter R B2 The second connecting part has a length R perpendicular to the central line of the second main body part A and the second main body part B 2 Wherein R is A2 =R B2 =R 2 。
In one or more embodiments of the present invention, the center line of the first body portion a and the first body portion B in the first column element has a length L 1 The length L 1 Greater than or equal to half the circumference of the first body portion a or the first body portion B; the central line of the second main body A and the second main body B in the second cylindrical element has a length L 2 The length L 2 Greater than or equal to half the circumference of the second body portion a or B.
In one or more embodiments of the present invention, the silicon capacitor electrode structure further includes a third pillar cell array formed on the first surface of the substrate, the third pillar cell array including a plurality of third pillar cells distributed in a third periodic lattice, each of the third pillar cells including third body portions a and B at both ends and third connection portions connecting the third body portions a and B, a center point of the third body portion a among the third pillar cells constituting a lattice point of the third periodic lattice; any grid point of the third periodic grid, any grid point of the second periodic grid and any grid point of the first periodic grid are not overlapped, and the third cylinder element is not contacted with the first cylinder element and the second cylinder element.
In one or more embodiments of the present invention, a straight line where the central lines of the third body portion a and the third body portion B in the third column element are located is parallel to or intersects with a straight line where the central lines of the first body portion a and the first body portion B in the first column element are located or a straight line where the central lines of the second body portion a and the second body portion B in the second column element are located.
In one or more embodiments of the present invention, the third cylinder primitive has the same size as the first cylinder primitive, and is moved by the first cylinder primitive and rotated about the center point of its first body portion a by an alpha 2 After angle forming, said alpha 2 The angle ranges from 0 DEG to 180 deg.
In one or more embodiments of the invention, the first periodic grid comprises a parallelogram grid having cells ABCD; the second periodic grid comprises a parallelogram grid having cells a 'B' C 'D'; the third periodic grid comprises a parallelogram grid having cells a 'B' C 'D'; the dimensions of the parallelogram grid with cells ABCD, the parallelogram grid with cells a 'B' C 'D' and the parallelogram grid with cells a "B" C "D" are all the same.
In one or more embodiments of the invention, the first periodic mesh comprises an isosceles triangle mesh with cells ABC; the second periodic mesh comprises an isosceles triangle mesh having cells a ' B ' C '; the third periodic grid comprises an isosceles triangle grid having cells a "B" C "; the isosceles triangle mesh with cell ABC, the isosceles triangle mesh with cell a 'B' C 'and the isosceles triangle mesh with cell a″ b″ C' are all the same in size.
In one or more embodiments of the invention,the third main body A is configured to have a diameter R A3 The third body portion B is configured to have a diameter R B3 The third connecting part has a length R perpendicular to the central line of the third main body part A and the third main body part B 3 Wherein R is A3 =R B3 =R 3 The method comprises the steps of carrying out a first treatment on the surface of the The central line of the third main body A and the third main body B in the third column element has a length L 3 The length L 3 Greater than or equal to half the circumference of the third body portion a or the third body portion B.
In one or more embodiments of the invention, side AB is parallel to side a 'B', and side AC is parallel to side a 'C'.
The invention also provides a silicon capacitor, which comprises the silicon capacitor electrode structure.
Compared with the prior art, according to the silicon capacitor electrode structure, the surface area of the electrode can be increased in a limited space by adopting a mode of nesting and combining a plurality of groups of column element arrays distributed by different periodic grids, so that the capacitance of the capacitor is improved, and more charges can be stored.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the aggregation of electrons on the peripheral surface can be reduced through the special shape arrangement of the first, second and third cylinder elements, and the Equivalent Series Resistance (ESR) of the silicon capacitor electrode structure is further reduced by matching with the arrangement of different periodic grids.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the surface area is increased through the periodical grid arrangement of different arrays, and the volume of the capacitor can be reduced under the condition of keeping the capacitance unchanged, which is very important for integration in small electronic equipment, and higher capacitance can be realized in a limited space.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the energy density can be improved. Since the energy density of a capacitor is related to its capacitance and operating voltage, more energy can be stored in the same volume by increasing the capacitance. According to the silicon capacitor electrode structure, through combination, nesting and arrangement of different arrays, the surface area of the electrode is increased in the same space, and the capacitance of the capacitor is improved.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the performance and the stability can be further improved. The column element arrays arranged in a periodic grid can provide uniform electric field distribution, and are beneficial to improving the performance and stability of the capacitor. The uniform electric field distribution helps to reduce leakage current of the capacitor, improve insulation performance, and reduce losses. The column element arrays arranged in the periodic grid can be realized through an accurate manufacturing process, and the consistency of the manufacturing process is improved. This helps to reduce the performance difference between the capacitors and improves the manufacturing controllability.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the mechanical stability can be improved, and the heat dissipation performance can be enhanced. The periodic grid arrangement of the column primitives has better mechanical stability. This is particularly important for capacitors used in environments where vibrations or mechanical stresses are large. The periodic grid arrangement of the column elements can also improve the heat dissipation performance of the capacitor, because gaps are reserved among the elements, air flow is facilitated, and the temperature of the capacitor during operation is reduced.
According to the silicon capacitor electrode structure, the embedded arrangement of the plurality of groups of column element arrays is carried out through a random path identical dielectric (resistance) model, so that information about distribution of conductive paths and charge transmission behaviors in materials can be obtained from the silicon capacitor electrode structure more easily.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the nested arrangement of a plurality of groups of cylinder element arrays is simulated and analyzed through the random conductive path penetration model, and the situation that the equivalent resistances of the capacitor 3D structures are randomly connected in parallel can be better designed, so that the ESR of the capacitor can be predicted.
Drawings
FIG. 1 is a schematic plan view of a silicon capacitor electrode structure according to a first embodiment of the present invention;
fig. 2 is a partially enlarged view of fig. 1.
FIG. 3 is a schematic plan view of a silicon capacitor electrode structure according to a second embodiment of the present invention;
fig. 4 is a partially enlarged view of fig. 3.
FIG. 5 is a schematic plan view of a silicon capacitor electrode structure according to a third embodiment of the present invention;
fig. 6 is a partially enlarged view of fig. 5.
FIG. 7 is a schematic plan view of a silicon capacitor electrode structure according to a fourth embodiment of the present invention;
FIG. 8 is an enlarged view of a portion of FIG. 7
Fig. 9 is another enlarged view of a portion of fig. 7.
Fig. 10 is a capacitance simulation diagram of a silicon capacitor electrode structure according to an embodiment of the present invention and an electrode structure of a prior art three-star-shaped model.
Fig. 11 is an impedance simulation diagram of a silicon capacitor electrode structure according to an embodiment of the present invention and an electrode structure of a prior art trigeminal star pattern.
Detailed Description
The following detailed description of embodiments of the invention is, therefore, to be taken in conjunction with the accompanying drawings, and it is to be understood that the scope of the invention is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the term "comprise" or variations thereof such as "comprises" or "comprising", etc. will be understood to include the stated element or component without excluding other elements or components.
As mentioned in the background, in order to increase the capacitance density, it is possible to increase the aspect ratio of the pillars, i.e. to increase the length of the pillars or to decrease the cross-sectional size or footprint of the pillars, and to place more pillars on the same substrate area. However, pillars with high aspect ratios are prone to fracture and/or toppling when subjected to shear forces, such as may occur during handling and/or processing, existing electrode designs often fail to meet the electrode surface area and structural stability requirements for a particular application, thereby limiting the field of application of the capacitor. Second, existing electrode designs, which are not reasonably arranged on a substrate, result in a high Equivalent Series Resistance (ESR) of the resulting electrode structure.
In order to solve the technical problems, the invention provides a silicon capacitor electrode structure based on a random path full dielectric (resistance) model and a random conductive path percolation model, which is characterized in that firstly, cylinder elements with main body parts and connecting parts are constructed to enhance the stability of the electrode structure, meanwhile, the cylinder elements are arranged according to different periodic grids in array mode, a plurality of groups of cylinder element arrays arranged according to different periodic grid arrays are nested and combined, and the cylinder elements in the cylinder element arrays are different in relative basic low angle, so that the capability of bearing stress of the cylinder elements is enhanced, meanwhile, the surface area of the electrode can be further increased in a limited space, and the equivalent series resistance is reduced to meet the application requirement.
The random path is identical to a dielectric (resistive) model describing the distribution and nature of the conductive paths in the dielectric material that are random. Such a model would be applied to analyze the electrical conductance behavior in complex media, where charge is transported in the material through randomly distributed conductive paths. By simulating and analyzing random paths throughout the dielectric model, information about the distribution of conductive paths and charge transport behavior in the material can be obtained. This model is a theoretical, simplified description and the electrical behavior of an actual material may be affected by more factors such as the microstructure of the material, the nature of the charge carriers, etc. When using random path isotactic dielectric (resistive) models, appropriate modifications and verification are required depending on the specific materials and experimental conditions to ensure the applicability and accuracy of the model.
Random conduction path percolation model is used to describe the distribution and nature of a conduction path with randomness in a complex medium. This model will be applied to analyze the percolation behavior of the conductivity in the material. The random conductive path percolation model is used for describing a model of random parallel property of the equivalent resistance of the 3D capacitor, and the situation that the conductive paths are randomly distributed is considered. The equivalents are connected in parallel in a periodically regular distribution. Random conduction path penetration models can help to better predict ESR by modeling and analyzing such random parallel conditions.
As shown in fig. 1, 3, 5 and 7, a silicon capacitor electrode structure according to an embodiment of the present invention includes: a substrate 10, a first column cell array and a second column cell array.
The substrate 10 has a first surface serving as a bottom support for the first and second pillar cell arrays and the subsequent other pillar cell arrays. With the first surface of the substrate 10 as a bottom plane, a three-dimensional rectangular coordinate system is established thereon, the lateral direction being defined as the x-direction, the longitudinal direction being defined as the y-direction, and the direction perpendicular to the first surface being defined as the z-direction.
The first column cell array is formed on the first surface of the substrate 10. The first column cell array includes a plurality of first column cells 21.
As shown in fig. 2, the first cylinder element 21 extends in the z-direction from the first surface by a length L Z1 . The first pillar element 21 is part of an electrode structure. Each of the first column cells 21 includes first body portions a211 and B212 at both ends and first connection portions 213 connecting the first body portions a211 and B212. In the z direction, the lengths of the first main body A211 and the first main body B212 are the same, and are L Z1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the first connecting portion 213 is the same as the length of the first main body portion a211 and the first main body portion B212, and is L Z1 . Preferably, the first body portion A211 is configured to have a diameter R A1 A circular cylinder structure of (a); the first body portion B212 is configured to have a diameter R B1 A circular cylinder structure of (a); the central line of the first body part A211 and the first body part B212 in the first column element 21 has a length L 1 Length L 1 Greater than or equal to half the perimeter of the first body portion a211 or the first body portion B212, this arrangement allows the first cylinder element 21 to have a larger surface area. The first connecting portion 213 has a length R perpendicular to the central line of the first body portion A211 and the first body portion B212 1 Wherein R is A1 =R B1 =R 1 . Thus, the first body portion A211 has a first surface (i.e., in the z-direction) perpendicular to and passes through the first body portion A211 itself A first section of the centroid; the first body portion B212 has a second cross section perpendicular to the first surface (i.e., in the z-direction) and passing through the center point of the first body portion B212 itself; the first connection part 213 has a third section perpendicular to the first surface and perpendicular to the central line of the first body part a211 and the first body part B212; the third cross section of the first connecting portion 213 in any one of the directions from the first main body portion a211 to the first main body portion B212 always completely coincides with the first cross section of the first main body portion a211 and the second cross section of the first main body portion B212.
The plurality of first column elements 21 are distributed on the first surface of the substrate 10 in a first periodic grid. Wherein the center point of the first body portion a211 in the first column element 21 constitutes a lattice point of the first periodic lattice. It will be appreciated that the center points of the first body portions a211 in the adjacent four first cylinder cells 21 of the adjacent two rows and two columns constitute four vertices a, B, C, D of the unit cell ABCD. The first periodic grid may comprise a quadrilateral grid having a plurality of cells ABCD. Preferably, the first periodic grid comprises a parallelogram grid with cells ABCD, i.e. cells ABCD being parallelogram shaped cells.
The second column element array is formed on the first surface of the substrate 10. The second column cell array includes a plurality of second column cells 31.
The second cylindrical element 31 extends in the z-direction from the first surface and has an extension length L Z2 . The second cylindrical element 31 is part of the electrode structure. Each of the second cylindrical elements 31 includes a second main body portion a311 and a second main body portion B312 at both ends, and a second connection portion 313 connecting the second main body portion a311 and the second main body portion B312. In the z direction, the lengths of the second body portion A311 and the second body portion B312 are the same, and are L Z2 The method comprises the steps of carrying out a first treatment on the surface of the The length of the second connection portion 313 is the same as the length of the second body portion a311 and the second body portion B312, and is L Z2 . Preferably, the second body portion A311 is configured to have a diameter R A2 A circular cylinder structure of (a); the second body portion B312 is configured to have a diameter R B2 A circular cylinder structure of (a); the center line of the second body portion a311 and the second body portion B312 in the second cylindrical element 31 has a length L 2 Length L 2 Greater than or equal to half the perimeter of the second body portion a311 or the second body portion B312, this arrangement allows the second cylindrical element 31 to have a larger surface area. The second connection portion 313 has a length R perpendicular to the central line of the second body portion A311 and the second body portion B312 2 Wherein R is A2 =R B2 =R 2 . Thus, the second body portion a311 has a fourth cross section perpendicular to the first surface (i.e., in the z-direction) and passing through the center point of the second body portion a311 itself; the second body portion B312 has a fifth cross section perpendicular to the first surface (i.e., in the z-direction) and passing through the center point of the second body portion B312 itself; the second connection portion 313 has a sixth section perpendicular to the center line of the second body portion a311 and the second body portion B312 and perpendicular to the first surface; the sixth cross section of the second connecting portion 313 in any one of the directions from the second main body portion a311 to the second main body portion B312 always completely coincides with the fourth cross section of the second main body portion a311 and the fifth cross section of the second main body portion B312.
The plurality of second cylindrical elements 31 are distributed on the first surface of the substrate 10 in a second periodic grid. Wherein the center points of the second body portions a311 in the second cylindrical element 31 constitute lattice points of the second periodic lattice. It will be appreciated that the center points of the second body portions a311 in the adjacent four second cylindrical elements 31 of two adjacent rows and two columns constitute four vertices a ', B', C ', D' of the cells a 'B' C 'D'. The second periodic grid may comprise a quadrilateral grid having a plurality of cells a ' B ' C ' D. Preferably, the second periodic grid comprises a parallelogram grid having cells a 'B' C 'D', i.e. cells a 'B' C 'D' are parallelogram shaped cells.
On the first surface of the substrate 10, a first periodic grid formed of a first column cell array is nested with a second periodic grid formed of a second column cell array. Wherein the parallelogram grid having cells ABCD in the first periodic grid is the same size as the parallelogram grid having cells a 'B' C 'D' in the second periodic grid, and the sides AB in cells ABCD are parallel to sides a 'B' in cells a 'B' C 'D', and the sides AC in cells ABCD are parallel to sides a 'C' in cells a 'B' C 'D'. Any lattice point of the first periodic mesh, that is, the first body portion a211 of the first column primitive 21, and any lattice point of the second periodic mesh, that is, the second body portion a311 of the second column primitive 31 are not arranged in superposition, and the first column primitive 21 and the second column primitive 31 are also arranged in non-contact.
In one embodiment, the line where the central lines of the first body portion a211 and the first body portion B212 in the first column element 21 are located is parallel to the line where the central lines of the second body portion a311 and the second body portion B312 in the second column element 31 are located. In yet another embodiment, a straight line where the center lines of the first body portion a211 and the first body portion B212 in the first column element 21 are located intersects a straight line where the center lines of the second body portion a311 and the second body portion B312 in the second column element 31 are located, as shown in fig. 2.
Preferably, the second cylindrical element 31 has the same size as the first cylindrical element 21, and the second cylindrical element 31 can be seen as being moved by the first cylindrical element 21 and rotated about the center point of its first body portion a211 by a 1 The rotation direction may be either clockwise or counterclockwise after the angle is formed. Alpha 1 The angle may range from 0 deg. to 180 deg.. And, the horizontal distance between the center point of the second body portion a311 of the second column primitive 31 and the center point of the first body portion a211 of the first column primitive 21 is x1, and the vertical distance is y1.
Referring to fig. 1 and 2, in the silicon capacitor electrode structure shown in fig. 1 and 2, the first periodic grid formed by the first column cell array is distributed in a square grid, and the side AB of each unit cell ABCD is parallel to the x-direction and the side AC is parallel to the y-direction. The second periodic grid formed by the second cylindrical element array is also distributed in a square grid, and the side A 'B' of each unit cell A 'B' C 'D' is parallel to the x direction, and the side A 'C' is parallel to the y direction. Wherein the length of side AB is equal to the length of side A 'B', and the length of side AC is equal to the length of side A 'C'. Preferably, the center point of the second body portion a311 of each second cylindrical element 31 is located at one cell in the first periodic grid At the center point of the grid. It can be understood that the second column element array is formed by translating the whole first column element array by 1/2 of the length of the side AB along the x-direction, translating the side AC along the y-direction by 1/2 of the length, and rotating each first column element 21 by alpha with the center point of the first main body A211 1 And forming after the angle. In the present embodiment, α 1 Is 45 deg..
Referring to fig. 3 and 4, in the silicon capacitor electrode structure shown in fig. 3 and 4, the first periodic grid formed by the first column element array is in a diamond grid distribution, and the included angle between the side AB of each unit cell ABCD and the x direction is 45 ° and the included angle between the side AC and the y direction is 45 °. The second periodic grid formed by the second cylindrical element array is also distributed in a diamond-shaped grid, and the included angle between the side A 'B' of each unit cell A 'B' C 'D' and the x direction is 45 degrees, and the included angle between the side A 'C' and the y direction is 45 degrees. Wherein the length of side AB is equal to the length of side A 'B', and the length of side AC is equal to the length of side A 'C'. It can be understood that the second column element array is formed by translating the whole first column element array along the x-direction for a certain distance x1, then translating the whole first column element array along the y-direction for a certain distance y1, and finally rotating each first column element 21 by alpha with the center point of the first main body A211 1 And forming after the angle. In the present embodiment, α 1 Is 90 deg..
Referring to fig. 5 and 6, in the silicon capacitor electrode structure shown in fig. 5 and 6, the first periodic grid formed by the first column cell array is also distributed in a square grid, and the side AB of each unit cell ABCD forms an angle α with the x direction 3 An angle alpha is formed between the side AC and the y direction 4 Included angle, preferably, alpha 4 =α 3 . The second periodic grid formed by the second column element array is also distributed in square grid, and the side A 'B' of each cell A 'B' C 'D' forms an angle alpha with the x direction 3 An angle alpha is formed between the side A 'C' and the y direction 4 Included angle, preferably, alpha 4 =α 3 . Wherein the length of side AB is equal to the length of side A 'B', and the length of side AC is equal to the length of side A 'C'. Preferably, each second cylindrical elementThe center points of the second body portions a311 of 31 are each located on the center point of one cell in the first periodic grid. It will be understood that the second column element array is formed by translating the whole first column element array along the direction of the side AB by 1/2 of the length of the side AB, translating the first column element array along the direction of the side AC by 1/2 of the length of the side AC, and rotating each first column element 21 by alpha with the center point of the first main body A211 1 And forming after the angle. Alpha 1 The angle of (2) is 0-180.
In the above embodiments, the silicon capacitor electrode structures each include two sets of pillar cell arrays. Of course, the silicon capacitor electrode structure may also include three sets of pillar cell arrays. Wherein the first column element in the first column element array and the second column element in the second column element array are the same as those in the above-described embodiment, the present embodiment will not be explained in detail.
Referring to fig. 7, a third column cell array is formed on the first surface of the substrate 10. The third column cell array includes a plurality of third column cells 41.
Referring to fig. 8, a third cylinder element 41 extends in the z-direction from the first surface by a length L Z3 . The third pillar element 41 is part of an electrode structure. Each third column element 41 includes third body portions a411 and B412 at both ends and third connection portions 413 connecting the third body portions a411 and B412. In the z direction, the lengths of the third main body A411 and the third main body B412 are the same, and are L Z3 The method comprises the steps of carrying out a first treatment on the surface of the The length of the third connecting portion 413 is the same as the length of the third main body portion a411 and the third main body portion B412, and is L Z3 . Preferably, the third body portion A411 is configured to have a diameter R A3 A circular cylinder structure of (a); the third body portion B412 is configured to have a diameter R B3 A circular cylinder structure of (a); the center line of the third body portion a411 and the third body portion B412 in the third column element 41 has a length L 3 Length L 3 Greater than or equal to half the perimeter of the third body portion a411 or the third body portion B412, this arrangement allows the third cylinder element 41 to have a larger surface area. The third connecting part 413 has a line perpendicular to the center line of the third main body part A411 and the third main body part B412Length R 3 Wherein R is A3 =R B3 =R 3 . Thus, the third body portion a411 has a seventh cross section perpendicular to the first surface (i.e., in the z-direction) and passing through the center point of the third body portion a411 itself; the third body portion B412 has an eighth section perpendicular to the first surface (i.e., in the z-direction) and passing through the center point of the third body portion B412 itself; the third connecting portion 413 has a ninth section perpendicular to the center line of the third main body portion a411 and the third main body portion B412 and perpendicular to the first surface; any ninth cross section of the third connecting portion 413 in the direction from the third main body portion a411 to the third main body portion B412 always completely coincides with the seventh cross section of the third main body portion a411 and the eighth cross section of the third main body portion B412.
The plurality of third column elements 41 are distributed on the first surface of the substrate 10 in a third periodic grid. Wherein the center point of the third body portion a411 in the third column element 41 constitutes a lattice point of the third periodic lattice. It will be appreciated that the center points of the third body portions a411 in the adjacent four third column elements 41 of two adjacent rows and two columns constitute the four vertices a ", B", C, D of the cells a ", B", C ", D". The third periodic grid may comprise a quadrilateral grid having a plurality of cells a "B" C "D". Preferably, the third periodic grid comprises a parallelogram grid having cells A 'B' C 'D', i.e. cells A 'B' C 'D' are parallelogram cells.
On the first surface of the substrate 10, a first periodic grid formed of a first columnar cell array and a second periodic grid formed of a second columnar cell array and a third periodic grid formed of a third columnar cell array are disposed nested with each other. The parallelogram grid with cells ABCD in the first periodic grid is the same as the parallelogram grid with cells A 'B' C 'D' in the second periodic grid and the parallelogram grid with cells A 'B' C 'D' in the third same periodic grid in size, the sides AB in the cells ABCD are parallel to the sides A 'B' in the cells A 'B' C 'D' and the sides A 'B' in the cells A 'B' C 'D', and the sides AC in the cells ABCD are parallel to the sides A 'C' in the cells A 'B' C 'D' and the sides A 'C' in the cells A 'B' C 'D'. Any lattice point of the first periodic mesh, that is, the first body portion a211 of the first column primitive 21 and any lattice point of the second periodic mesh, that is, the second body portion a311 of the second column primitive 31 and any lattice point of the third periodic mesh, that is, the third body portion a411 of the third column primitive 41 are arranged in a non-overlapping manner, and the first column primitive 21, the second column primitive 31 and the third column primitive 41 are also arranged in a non-contact manner.
In one embodiment, the line where the central lines of the first body portion a211 and the first body portion B212 in the first column element 21 are located is parallel to the line where the central lines of the second body portion a311 and the second body portion B312 in the second column element 31 are located and the line where the central lines of the third body portion a411 and the third body portion B412 in the third column element 41 are located. In still another embodiment, a straight line where the center lines of the first body portion a211 and the first body portion B212 in the first column element 21 are located intersects a straight line where the center lines of the second body portion a311 and the second body portion B312 in the second column element 31 are located and a straight line where the center lines of the third body portion a411 and the third body portion B412 in the third column element 41 are located, as shown with reference to fig. 8.
Preferably, the dimensions of the third cylindrical element 41 are exactly the same as those of the first cylindrical element 21, and the third cylindrical element 41 can be seen as being moved by the first cylindrical element 21 and rotated a about the center point of its first body portion a211 2 The rotation direction may be either clockwise or counterclockwise after the angle is formed. Alpha 2 The angle may range from 0 deg. to 180 deg.. And the horizontal distance between the center point of the third body portion a411 of the third column primitive 41 and the center point of the first body portion a211 of the first column primitive 21 is x2, and the vertical distance is y2.
Referring to fig. 7 and 8, in the silicon capacitor electrode structure shown in fig. 7 and 8, the first periodic grid formed by the first column cell array is distributed in a parallelogram grid, and the side a of each unit cell ABCDB are parallel to the x direction, and the angle formed by the side AC and the y direction is alpha 5 Included angle, preferably, alpha 5 The angle of (2) is in the range of 0 ° -90 °. The second periodic grid formed by the second cylindrical element array is also distributed in a parallelogram grid, and the side A 'B' of each cell A 'B' C 'D' is parallel to the x direction, and the side A 'C' forms an angle alpha with the y direction 5 Included angle, preferably, alpha 5 The angle of (2) is in the range of 0 ° -90 °. Wherein the length of side AB is equal to the length of side A 'B', and the length of side AC is equal to the length of side A 'C'. The third periodic grid formed by the third column cell array is also distributed in a parallelogram grid, and the side A 'B' of each cell A 'B' C 'D' is parallel to the x direction, and the side A 'C' forms an angle alpha with the y direction 5 Included angle, preferably, alpha 5 The angle of (2) is in the range of 0 ° -90 °. Wherein the length of side AB is equal to the length of side A 'B', and the length of side AC is equal to the length of side A 'C'.
It will be appreciated that the second column element array may be translated by a certain length x1 in the x direction and then a certain length y1 in the y direction from the whole first column element array, and finally each first column element 21 rotates counterclockwise by α about the center point of the first main body a211 1 And forming after the angle. Alpha 1 The angle of (2) is 0-180. The third column element array can be formed by translating the whole first column element array along the x direction for a certain length x2, translating the whole first column element array along the y direction for a certain length y2, and rotating each first column element 21 clockwise by alpha with the center point of the first main body A211 2 And forming after the angle. Alpha 2 The angle of (2) is 0-180.
Referring to fig. 7 and 9, in the silicon capacitor electrode structure of fig. 7, the first periodic grid formed by the first column cell array may also be distributed as isosceles triangle grids, and the side AB of each unit cell ABC forms an angle α with the x direction 6 Included angle, preferably, alpha 6 The angle of (2) is in the range of 0 ° -90 °. The side AC forms an angle alpha with the y-direction 7 Included angle, preferably, alpha 7 The angle of (2) is in the range of 0 ° -90 °. Periodic grid formed by second column element arrayIs also distributed in an isosceles triangle grid, and the side A ' B ' of each cell A ' B ' C ' forms an angle alpha with the x direction 6 Included angle, preferably, alpha 6 The angle of (a) ranges from 0 DEG to 90 DEG, and the angle alpha is formed between the side A 'C' and the y direction 7 Included angle, preferably, alpha 7 The angle of (2) is in the range of 0 ° -90 °. Wherein the length of side AB is equal to the length of side A 'B', and the length of side AC is equal to the length of side A 'C'. The third periodic grid formed by the third column cell array is also distributed in an isosceles triangle grid, and the side A ' B ' of each cell A ' B ' C ' forms an angle alpha with the x direction 6 Included angle, preferably, alpha 6 The angle of (a) ranges from 0 DEG to 90 DEG, and the angle alpha is formed between the side A 'C' and the y direction 7 Included angle, preferably, alpha 7 The angle of (2) is in the range of 0 ° -90 °. Wherein the length of side AB is equal to the length of side A 'B', and the length of side AC is equal to the length of side A 'C'. Alpha 6 And alpha 7 The sum of the angles of (2) is 90.
It will be appreciated that the second column element array may be translated by a certain length x1 in the x direction and then a certain length y1 in the y direction from the whole first column element array, and finally each first column element 21 rotates counterclockwise by α about the center point of the first main body a211 1 And forming after the angle. Alpha 1 The angle of (2) is 0-180. The third column element array can be formed by translating the whole first column element array along the x direction for a certain length x2, translating the whole first column element array along the y direction for a certain length y2, and rotating each first column element 21 clockwise by alpha with the center point of the first main body A211 1 And forming after the angle. Alpha 1 The angle of (2) is 0-180.
It can be appreciated that the silicon capacitor structure can be obtained by performing subsequent layer structure fabrication (in a conventional manner) on the first surface of the substrate of the silicon capacitor electrode structure and the outer surface of the pillar element. The subsequent fabrication of the layer structure is not important to the present application and is not described in detail herein.
In the above embodiments, the nested combination of the multiple groups of pillar cell arrays distributed by different periodic grids has higher capacitance, lower equivalent series resistance and longer service life, whether analyzed from a random path full dielectric (resistance) model or a random conductive path percolation model.
Referring to fig. 10, fig. 10 is a capacitance simulation diagram of the electrode structure of the silicon capacitor in the second embodiment and the fourth embodiment of the present application and the electrode structure of the three-star-shaped model in the prior art, as can be seen from the figure, C Fourth embodiment =0.362pF@1GHz，C Second embodiment = 0.312pF@1GHz，C Three-fork star post = 0.244pF@1GHz。
Referring to fig. 11, fig. 11 is a graph showing impedance simulation of the electrode structure of the silicon capacitor according to the second and fourth embodiments of the present application and the electrode structure of the three-star-shaped model according to the prior art, and it can be seen from the graph that ESR Fourth embodiment = 0.74ohm@SRF，ESR Second embodiment = 0.75ohm@SRF，ESR Three-fork star post = 0.83ohm@SRF。
It can be concluded that the silicon capacitor formed by the electrode structure of the silicon capacitor in the application has a higher capacitance value per unit area and a lower equivalent series resistance compared with the silicon capacitor formed by the electrode structure of the three-star-shaped model in the prior art. In addition, as can be seen from the above figures, the combined nest of the three column element arrays is higher in capacitance per unit area and lower in equivalent series resistance than the silicon capacitor made of the combined nest of the two column element arrays.
Compared with the prior art, according to the silicon capacitor electrode structure, the surface area of the electrode can be increased in a limited space by adopting a mode of nesting and combining a plurality of groups of column element arrays distributed by different periodic grids, so that the capacitance of the capacitor is improved, and more charges can be stored.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the aggregation of electrons on the peripheral surface can be reduced through the special shape arrangement of the first, second and third cylinder elements, and the Equivalent Series Resistance (ESR) of the silicon capacitor electrode structure is further reduced by matching with the arrangement of different periodic grids.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the surface area is increased through the periodical grid arrangement of different arrays, and the volume of the capacitor can be reduced under the condition of keeping the capacitance unchanged, which is very important for integration in small electronic equipment, and higher capacitance can be realized in a limited space.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the energy density can be improved. Since the energy density of a capacitor is related to its capacitance and operating voltage, more energy can be stored in the same volume by increasing the capacitance. According to the silicon capacitor electrode structure, through combination, nesting and arrangement of different arrays, the surface area of the electrode is increased in the same space, and the capacitance of the capacitor is improved.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the performance and the stability can be further improved. The column element arrays arranged in a periodic grid can provide uniform electric field distribution, and are beneficial to improving the performance and stability of the capacitor. The uniform electric field distribution helps to reduce leakage current of the capacitor, improve insulation performance, and reduce losses. The column element arrays arranged in the periodic grid can be realized through an accurate manufacturing process, and the consistency of the manufacturing process is improved. This helps to reduce the performance difference between the capacitors and improves the manufacturing controllability.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the mechanical stability can be improved, and the heat dissipation performance can be enhanced. The periodic grid arrangement of the column primitives has better mechanical stability. This is particularly important for capacitors used in environments where vibrations or mechanical stresses are large. The periodic grid arrangement of the column elements can also improve the heat dissipation performance of the capacitor, because gaps are reserved among the elements, air flow is facilitated, and the temperature of the capacitor during operation is reduced.
According to the silicon capacitor electrode structure, the embedded arrangement of the plurality of groups of column element arrays is carried out through a random path identical dielectric (resistance) model, so that information about distribution of conductive paths and charge transmission behaviors in materials can be obtained from the silicon capacitor electrode structure more easily.
According to the silicon capacitor electrode structure provided by the embodiment of the invention, the nested arrangement of a plurality of groups of cylinder element arrays is simulated and analyzed through the random conductive path penetration model, and the situation that the equivalent resistances of the capacitor 3D structures are randomly connected in parallel can be better designed, so that the ESR of the capacitor can be predicted.
The foregoing descriptions of specific exemplary embodiments of the present invention are presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application to thereby enable one skilled in the art to make and utilize the invention in various exemplary embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (15)
1. A silicon capacitor electrode structure comprising:
a substrate having a first surface;
a first column cell array formed on a first surface of the substrate, the first column cell array including a plurality of first column cells distributed in a first periodic grid, each of the first column cells including first body portions a and B at both ends and first connection portions connecting the first body portions a and B, a center point of the first body portion a in the first column cell constituting a grid point of the first periodic grid;
a second cylindrical element array formed on the first surface of the substrate, the second cylindrical element array including a plurality of second cylindrical elements distributed in a second periodic grid, each of the second cylindrical elements including second body portions a and B at both ends and second connection portions connecting the second body portions a and B, a center point of the second body portion a in the second cylindrical element constituting a grid point of the second periodic grid;
any lattice point of the first periodic lattice is not overlapped with any lattice point of the second periodic lattice, and the first column element and the second column element are arranged in a non-contact manner.
2. The silicon capacitor electrode structure of claim 1, wherein, on the first surface, a line where a center line of the first body portion a and the first body portion B in the first column element is located is parallel to or intersects with a line where a center line of the second body portion a and the second body portion B in the second column element is located.
3. The silicon capacitor electrode structure of claim 1, wherein the second pillar element has the same size as the first pillar element, and the second pillar element is moved by the first pillar element and rotated about the center point of the first body portion a thereof by α 1 And forming after the angle.
4. The silicon capacitor electrode structure of claim 3, wherein the α 1 The angle ranges from 0 DEG to 180 deg.
5. The silicon capacitor electrode structure of claim 4, wherein the α 1 The angle is 90 °.
6. The silicon capacitive electrode structure of claim 1 wherein the first periodic grid comprises a parallelogram grid having cells ABCD; the second periodic grid comprises a parallelogram grid having cells a 'B' C 'D'; the parallelogram grid with cells ABCD is the same size as the parallelogram grid with cells a 'B' C 'D'.
7. The silicon capacitor electrode structure of claim 6, wherein side AB is parallel to side a 'B' and side AC is parallel to side a 'C'.
8. The silicon capacitor electrode structure of claim 1, wherein the center point of the second body portion a in each of the second column cells is located on the center point of one cell of the first periodic grid constituted by the center point of the first body portion a in the first column cell as the lattice point.
9. The silicon capacitor electrode structure of claim 1, wherein the first body portion a is configured to have a diameter R A1 The first body portion B is configured to have a diameter R B1 The first connecting part has a length R perpendicular to the central line of the first main body part A and the first main body part B 1 Wherein R is A1 =R B1 =R 1 ；
The second main body A is configured to have a diameter R A2 The second body portion B is configured to have a diameter R B2 The second connecting part has a length R perpendicular to the central line of the second main body part A and the second main body part B 2 Wherein R is A2 =R B2 =R 2 。
10. The silicon capacitor electrode structure of claim 1, further comprising a third column cell array formed on the first surface of the substrate, the third column cell array including a plurality of third column cells distributed in a third periodic grid, each of the third column cells including third body portions a and third body portions B at both ends and third connection portions connecting the third body portions a and third body portions B, a center point of the third body portion a in the third column cell constituting a grid point of the third periodic grid;
Any grid point of the third periodic grid, any grid point of the second periodic grid and any grid point of the first periodic grid are not overlapped, and the third cylinder element is not contacted with the first cylinder element and the second cylinder element.
11. The silicon capacitor electrode structure of claim 10, wherein a line where a center line of the third body portion a and the third body portion B in the third column element is located is parallel to or intersects a line where a center line of the first body portion a and the first body portion B in the first column element is located or a line where a center line of the second body portion a and the second body portion B in the second column element is located.
12. The silicon capacitor electrode structure of claim 10, wherein the third pillar element has the same size as the first pillar element, and the third pillar element is moved by the first pillar element and rotated about the center point of the first body portion a thereof by α 2 After angle forming, said alpha 2 The angle ranges from 0 DEG to 180 deg.
13. The silicon capacitive electrode structure of claim 10 wherein the first periodic grid comprises a parallelogram grid having cells ABCD; the second periodic grid comprises a parallelogram grid having cells a 'B' C 'D'; the third periodic grid comprises a parallelogram grid having cells a 'B' C 'D'; the dimensions of the parallelogram grid with cells ABCD, the parallelogram grid with cells a 'B' C 'D' and the parallelogram grid with cells a "B" C "D" are all the same; or,
The first periodic mesh comprises an isosceles triangle mesh with cells ABC; the second periodic mesh comprises an isosceles triangle mesh having cells a ' B ' C '; the third periodic grid comprises an isosceles triangle grid having cells a "B" C "; the isosceles triangle mesh with cell ABC, the isosceles triangle mesh with cell a 'B' C 'and the isosceles triangle mesh with cell a″ b″ C' are all the same in size.
14. The silicon capacitor electrode structure of claim 10, wherein the third body portion a is configured to have a diameter R A3 The third body portion B is configured to have a diameter R B3 The third connecting part has a length R perpendicular to the central line of the third main body part A and the third main body part B 3 Wherein R is A3 =R B3 =R 3 ；
The central line of the third main body A and the third main body B in the third column element has a length L 3 The length L 3 Greater than or equal to half the circumference of the third body portion a or the third body portion B.
15. A silicon capacitor comprising a silicon capacitor electrode structure as claimed in any one of claims 1 to 14.
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