CN117872676B - Grating morphology correction imprinting master plate and correction method - Google Patents
Grating morphology correction imprinting master plate and correction method Download PDFInfo
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- CN117872676B CN117872676B CN202410272321.0A CN202410272321A CN117872676B CN 117872676 B CN117872676 B CN 117872676B CN 202410272321 A CN202410272321 A CN 202410272321A CN 117872676 B CN117872676 B CN 117872676B
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000012937 correction Methods 0.000 title claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 74
- 230000008569 process Effects 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000003292 glue Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000012876 topography Methods 0.000 claims description 8
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000012546 transfer Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004049 embossing Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
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Abstract
The invention provides a grating morphology correction imprint master and a correction method, wherein the imprint master comprises a plurality of imprinting units which are arranged on the surface of a substrate and are periodically arranged, the imprinting units comprise imprinting structures and imprinting compensation structures, the imprinting structures cover and are attached to part of the surface of the substrate, and the imprinting compensation structures are attached to one end, close to the substrate, of the imprinting structures along the extending direction of the imprinting structures; compared with the prior art, the method for correcting the grating morphology formed by the imprinting master plate has the advantages that the phenomenon of shrinkage at the top of the etched transfer structure is obviously improved, the etching top cut disappears, the deviation of the upper teeth and the lower teeth of the grating structure is extremely small, and the etching verticality is more than 87 degrees; therefore, by compensating the imprinting master plate structure and setting the imprinting compensation structure, the effect of correcting the etching transfer morphology can be realized, the existing etching process is greatly improved, meanwhile, the diffraction efficiency of the grating is improved, and unexpected technical effects are achieved for the person skilled in the art.
Description
Technical Field
The invention relates to the technical field of optics, in particular to a grating morphology correction imprint master plate and a correction method.
Background
In the prior art, the mode of preparing the diffraction grating often comprises two modes, namely, directly imprinting an organic grating material through an imprinting master plate to form a grating structure; the other mode is to form a patterning structure by imprinting the organic imprinting glue through an imprinting master, and then etching the inorganic grating material through an etching process to form a required structure. The first mode is limited by the low refractive index of the organic grating material, the grating efficiency is far lower than that of gratings made of inorganic materials (TiO 2、Nb2O5, siC and the like) with higher refractive index, and the weather resistance of the inorganic materials is better than that of the organic grating materials, so that the product stability is better. Therefore, the grating structure prepared in the second mode is more efficient, and is a common mode for preparing the high-efficiency grating structure.
However, when the grating structure is prepared based on the second mode, the morphology of the grating structure prepared by the imprinting etching process often has a certain difference between the actual etching result and the design, in fig. 1, as shown in (a-C), the grating structure in fig. 1 is designed, and in fig. 1, the grating structures in fig. 1 (B) - (C) are actually etched, and after the actual etching, the top of the etching transfer structure in fig. 1 (B) is "shrunk", so that the etching top cutting (unrercut) condition exists; or the situation that the etching transfer structure shown in (C) in fig. 1 is poor in verticality, so that the appearance is poor and the side face of the grating structure is inclined occurs. These two cases are not appreciated by those skilled in the art, but during the actual etching process, the grating structure is analyzed by SEM, which is often the case, as shown in the SEM image of fig. 2, with top cut and side tilt, respectively, as shown in B, C.
For the above-mentioned situation, the reason is that in the previous process, when the organic imprint is imprinted through the imprint master, the imprint process inevitably has bottom residual glue, the residual glue has a great influence on the etching of the next process, the residual glue causes the top of the etched transfer structure to shrink, and the top cutting and side tilting conditions occur, so that the morphology of the grating structure changes, and the formed grating structure cannot meet the design requirements, therefore, if the process is improved, the need is urgent.
In order to solve the above problems, the present invention provides a method for correcting grating morphology to improve the process.
Disclosure of Invention
The invention provides a grating morphology correction imprinting master plate and a correction method, which solve the problems in the prior art; by compensating the imprinting master structure, at least one compensation structure is arranged on two sides of a plurality of imprinting structures respectively, so that the effect of correcting the etching transfer morphology is achieved.
The grating morphology correction imprint master comprises a plurality of imprinting units which are arranged on the surface of a substrate and are periodically arranged, wherein each imprinting unit comprises an imprinting structure and an imprinting compensation structure, the imprinting structures are covered and attached to part of the surface of the substrate, the imprinting compensation structures are attached to one end, close to the substrate, of each imprinting structure along the extending direction of the imprinting structures on two sides of the period direction of the imprinting structures, and the imprinting compensation structures are in contact with the substrate, and the height of each imprinting compensation structure is smaller than that of each imprinting structure; the imprinting compensation structure parameters satisfy the following relation:
Wherein DeltaD represents the unilateral compensation width of the imprinting compensation structure, W 1 represents the upper tooth width of the grating obtained by the conventional imprinting etching process, W 2 represents the lower tooth width of the grating obtained by the conventional imprinting etching process, S represents the etching selection ratio of imprinting glue to grating material, deltaH represents the height of the imprinting compensation structure, H 0 represents the thickness of the imprinting glue, H represents the height of the imprinting unit, and P represents the period of the imprinting structure.
Further, in some embodiments, the imprint structure, the imprint compensation structure, and the substrate are integrally formed.
Of course, in other alternative embodiments, the imprinting structure, the imprinting compensation structure, and the substrate are each separately molded and recombined to form a unitary structure.
Optionally, in some embodiments, the imprint-compensating structure surrounds and conforms to an end of the imprint structure proximate to the substrate.
The invention further provides a grating morphology correction method, which is based on the grating morphology correction imprint master provided by any one of the previous embodiments, and comprises the following steps:
s1: obtaining grating structure parameters of actual etching based on a conventional imprinting etching process;
s2: based on the grating structure parameter compensation correction imprint master obtained in the step S1, laminating an imprint compensation structure on the peripheral part of one side, close to a substrate, of the imprint structure of the imprint master to obtain the imprint master;
s3: forming a structurally complementary imprint sub-plate based on the imprint master of step S2;
s4: coating a layer of imprinting glue on the surface of the wafer, and homogenizing the glue;
s5: stamping the stamping glue through the stamping plate in the step S3 to form a patterned mask structure;
s6: and etching the patterned mask structure to obtain an etched grating structure.
Further, in the step S1, the grating structure parameters include: grating upper tooth width W 1 obtained by conventional imprint lithography process, and grating lower tooth width W 2 obtained by conventional imprint lithography process.
In step S2, the imprint-compensated structure parameters may be implemented to satisfy the following relation:
Wherein DeltaD represents the unilateral compensation width of the imprinting compensation structure, W 1 represents the upper tooth width of the grating obtained by a conventional imprinting etching process, W 2 represents the lower tooth width of the grating obtained by a conventional imprinting etching process, S represents the etching selection ratio of imprinting glue to grating material, deltaH represents the height of the imprinting compensation structure, H 0 represents the thickness of the imprinting glue, H represents the height of the imprinting unit, and P represents the period of the imprinting structure.
Further, H 0 represents the thickness of the imprint resist, and H 0 is more than or equal to 100nm.
The invention further provides a diffraction optical waveguide which is formed by embossing and etching the grating morphology correction embossing master plate provided by the embodiment, or is prepared by the grating morphology correction method provided by the embodiment.
Meanwhile, the invention also provides near-eye display equipment, which comprises the diffractive optical waveguide provided by the embodiment.
The invention provides a grating morphology correction imprint master and a grating morphology correction method, wherein the imprint master comprises a plurality of imprinting units which are arranged on the surface of a substrate and are periodically arranged, the imprinting units comprise imprinting structures and imprinting compensation structures, the imprinting structures cover and are attached to part of the surface of the substrate, and the imprinting compensation structures are attached to one end, close to the substrate, of the imprinting structures along the extending direction of the imprinting structures; compared with the prior art, the method for correcting the grating morphology formed by the imprinting master plate has the advantages that the phenomenon of shrinkage at the top of the etched transfer structure is obviously improved, the etching top cut disappears, the deviation of the upper teeth and the lower teeth of the grating structure is extremely small, and the etching verticality is more than 87 degrees; therefore, by compensating the imprinting master structure, setting the imprinting compensation structure and limiting the relevant structural parameters of the compensation structure based on the conventional etching process to compensate and correct the conventional imprinting master structure, the effect of correcting the etching transfer morphology can be achieved, the conventional etching process is greatly improved, meanwhile, the diffraction efficiency of the grating is improved, and unexpected technical effects are achieved for the person skilled in the art.
The diffraction optical waveguide provided by the invention is formed by embossing and etching the grating morphology correction embossing master plate provided by the embodiment of the invention, or is prepared by the grating morphology correction method provided by the embodiment; the near-eye display device provided by the invention comprises the diffraction optical waveguide, so that the advantages of the grating morphology correction imprint master plate and the grating morphology correction method are achieved, and unexpected technical effects are achieved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a grating structure fabricated by a conventional imprint lithography process in the prior art;
FIG. 2 is a schematic cross-sectional SEM of a grating structure prepared by a conventional imprint lithography process of the prior art;
FIG. 3 is a schematic diagram of a grating topography correction imprint master provided by the present invention;
FIG. 4 is an enlarged schematic view of a partial structure section of any adjacent two of the embossing units in the structure of FIG. 3;
FIG. 5 is a schematic diagram II of a grating topography correction imprint master provided by the present invention;
FIG. 6 is a schematic diagram of a sub-version of a grating topography correction imprint master provided by the present invention;
FIG. 7 is a schematic diagram of a wafer coated with imprint resist corresponding to one of the steps of a method for correcting grating topography according to the present invention;
FIG. 8 is a schematic diagram of a wafer after forming a patterned mask structure corresponding to one of the steps of a grating profile correction method according to the present invention;
FIG. 9 is a schematic diagram of an etched grating structure according to the method for correcting grating morphology of the present invention;
FIG. 10 is a schematic cross-sectional SEM of a grating structure etched by a grating profile correction method according to the present invention;
the attached drawings are identified:
1: a substrate; 2: an embossing unit; 21: embossing the compensation structure; 22: embossing structure
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the prior art, based on the existing imprint etching process, in fig. 1, as shown in a-1C in fig. 1, in fig. 1 (a) is a grating structure based on design, such as a straight tooth structure, in fig. 1 (B) - (C) are actually etched grating structures, and based on the standard grating structure in fig. 1 (a), after the actual imprint etching, an etched grating structure is obtained, and the situation that the top of the etching transfer structure shown in fig. 1 (B) is "shrunk", that is, the top is narrowed, and etching top is cut (unrercut) immediately appears; further, the situation that the verticality of the etching transfer structure shown in (C) of fig. 1 is poor, so that the appearance is poor and the side face of the grating structure is inclined is included.
Based on the above, the cross section of the etched grating structure is analyzed by SEM, and the top cutting and tilting conditions of (B) to (C) are often occurred, as shown in the SEM image in fig. 2, B, C in fig. 2 corresponds to the grating structure B, C in fig. 1, and as shown in the grating structure corresponding to B, C, the top cutting and tilting conditions of the side surface occur in the grating structure actually etched by imprinting.
Therefore, the invention provides a master plate and a method for correcting the grating morphology, which are used for correcting the top cutting and side tilting conditions in the etching process, improving the top shrinkage and tilting phenomena of an etching transfer structure, and expecting to obtain a preset grating structure or enabling the etched grating structure to be close to a design structure as much as possible, and improving the etching process precision and the diffraction efficiency of the grating.
As shown in fig. 3, in some embodiments, first, there is provided a grating profile correction imprint master, the imprint master includes a plurality of periodically arranged imprint units 2 disposed on a surface of a substrate 1, the imprint units 2 include imprint structures 22 and imprint compensation structures 21, the imprint structures 22 cover and are attached to a portion of the surface of the substrate 1, the imprint compensation structures 21 are attached to both sides of a periodic direction of the imprint structures 22 and along a direction in which the imprint structures 22 extend to an end of the imprint structures 22 near the substrate 1, and the imprint compensation structures 21 are in contact with the substrate 1, and a height of the imprint compensation structures 21 is smaller than a height of the imprint structures 22.
To further illustrate, as shown in conjunction with the dashed box T in fig. 3, since the conventional grating imprint master does not include an imprint compensation structure, over-etching is easily formed at the bottom of the imprint structure 22 during etching, resulting in a situation where the bottom etching time is too long, so that the top of the transfer structure is "shrunk", i.e., the top is narrowed and tilted. Therefore, the embossing compensation structure 21 is attached around one end of the embossing structure 22 close to the substrate 1 to form a plurality of embossing units 2 which are periodically arranged, the embossing compensation structure 21 protects the etching condition of the bottom of the embossing structure 22, reduces the etching time of the top of the transfer structure (namely the top of the grating structure), and can improve the structural morphology of the etched grating so as to reduce the conditions of top cutting and side tilting, and the etched grating structure is as close to the designed grating structure as possible.
The present invention defines the direction of the grating, i.e. the vertical direction from the bottom of the imprint mechanism 22 towards away from the bottom.
In some embodiments, the imprint structure 22, the imprint compensation structure 21, and the substrate 1 are integrally formed, however, the present invention is not limited thereto, and may be formed separately and then combined to form a unitary structure based on the inventive concept of the present invention.
Further, referring to fig. 4, fig. 4 is an enlarged view of the cross-sectional structure of any two adjacent imprint units 2 of fig. 3, based on which the imprint compensation structures 21 of the present invention are formed on both left and right sides of the imprint structure 22, in combination with knowledge in the art,
In one embodiment, when a one-dimensional grating is provided on demand, the imprint-compensation structure 21 is attached to both sides of the imprint structure 22 in the direction along which the imprint structure extends in the periodic direction thereof, i.e., the region of the imprint-compensation structure 21 near one end of the substrate 1 among the both sides of the imprint structure 22. Even further, in some other alternative embodiments, it may be further defined that the imprint-compensating structure 21 surrounds and conforms to a plurality of sides of the imprint structure 22, i.e., the imprint-compensating structure 21 surrounds and conforms to a region of the plurality of sides of the imprint structure 22 near an end of the substrate 1, forming a wrapped step structure.
In the case of a two-dimensional grating, the imprint compensation structure 21 surrounds and is attached to multiple sides of the imprint structure 22, that is, the imprint compensation structure 21 is completely surrounded and attached to the peripheral portion of the imprint structure 22, that is, the imprint compensation structure 21 surrounds and is attached to the peripheral portion of the side of the imprint structure 22 near one end of the substrate 1, so as to form a wrapped structure near one end of the substrate 1, and the height of the imprint compensation structure 21 is smaller than the height of the imprint structure 22, so as to form a surrounding step structure.
Referring to fig. 1 and fig. 4, based on the top-cut condition occurring in the conventional etching process, the grating structure is obtained according to the SEM image of the cross section of the grating structure, and in fig. 1, the parameters of the grating structure include: grating upper tooth width W 1, grating lower tooth width W 2, upper and lower tooth width difference Δw; the etching parameters include: etching selection ratio S of the imprinting glue and the grating material, the width difference of the upper teeth and the lower teeth of the grating is limited based on the etching selection ratio S
Further, referring to fig. 4, based on the schematic cross-sectional view of the embossing unit, it can be known that, whether the embossing unit is a one-dimensional grating or a two-dimensional grating, the parameter relationship is defined by the schematic cross-sectional view of the embossing unit relative to the grating direction, so as to define the embossing structure period P, that is, the minimum unit length of the embossing unit repeatedly appears, the upper tooth width D 2, the lower tooth width D of the embossing unit 2, the unilateral compensation width Δd of the embossing compensation structure, the altitude Δh of the embossing compensation structure, and the altitude H of the embossing unit 2, and then the unilateral embossing compensation structure satisfies the following relational expression:
Wherein DeltaD represents the unilateral compensation width of the imprinting compensation structure, W 1 represents the upper tooth width of the grating obtained by the conventional imprinting etching process, W 2 represents the lower tooth width of the grating obtained by the conventional imprinting etching process, S represents the etching selection ratio of imprinting glue to grating material, deltaH represents the height of the imprinting compensation structure, H 0 represents the thickness of the imprinting glue, H represents the height of the imprinting unit, and P represents the period of the imprinting structure.
Based on the above knowledge, after calculating Δd and Δh of the single-sided imprint compensation structure, as shown in fig. 4, parameters of the imprint compensation structures on the left and right sides are the same, that is, the single-sided compensation width Δd and the height Δh of the imprint compensation structure are the same, and parameters of the imprint compensation structures on different sides are kept consistent.
According to the grating morphology correction imprint master provided by the invention, the imprint compensation structure 21 is arranged on the peripheral edge of the imprint structure 22, so that different etching times at the etching position can be modulated, the top shrinkage condition during etching is prevented, the conditions of top cutting and side inclination are reduced, the correction of the etched grating morphology is realized, and the effect of etching transfer morphology is improved.
Meanwhile, the invention provides a grating morphology correction method, which is based on the grating morphology correction imprint master provided by any one of the embodiments, and comprises the following steps:
s1: obtaining grating structure parameters of actual etching based on a conventional imprinting etching process;
In step S1, the actually etched grating structure parameters include: grating upper tooth width W 1 obtained by conventional imprint lithography process, and grating lower tooth width W 2 obtained by conventional imprint lithography process.
Further, determining the etching selection ratio S of the imprinting glue to the grating material.
S2: compensating and correcting the imprinting master plate based on the grating structure parameters obtained in the step S1 to obtain the structure parameters of the corrected imprinting unit and preparing the imprinting master plate; the corrected stamping unit comprises a stamping structure and a stamping compensation structure, the stamping structure covers and is attached to part of the surface of the substrate, the stamping compensation structure is attached to one end, close to the substrate, of the stamping structure along the extending direction of the stamping structure, and the stamping compensation structure is in contact with the substrate;
As shown in fig. 5, based on the actually etched grating structure parameters obtained in the foregoing steps, the compensated grating imprint master is optimized, the structure parameters of the corrected imprint units are obtained, and the imprint master is prepared, where the imprint master includes a plurality of imprint units arranged periodically, an imprint compensation structure 21 is attached to a side surface of an imprint structure 22 of the imprint unit, which is close to a side of a substrate 1, and the imprint compensation structure 21 contacts the substrate 1, and the height of the imprint compensation structure 21 is smaller than that of the imprint structure 22, so as to implement compensation correction of the grating morphology.
S3: forming a structurally complementary imprint sub-plate based on the imprint master of step S2;
As shown in fig. 6, based on the compensated grating imprinting master, an imprinting sub-plate structure complementary to the structure is formed, and the imprinting operation of imprinting glue is realized through the imprinting sub-plate structure.
S4: coating a layer of stamping glue on the surface of the wafer, and uniformly coating the stamping glue, wherein the thickness of the stamping glue is H 0;
In this step, as shown in fig. 7, a wafer, such as a glass wafer or a polymer resin wafer, is selected, and a layer of imprint resist is uniformly coated on the surface thereof, and a resist homogenizing operation is performed, so that the thickness of the imprint resist is defined to be H 0,H0 -100 nm in order to control the height after imprinting by the imprint template.
S5: stamping the stamping glue through the stamping sub-plate in the step S3 to form a patterned mask structure;
as shown in fig. 8, the imprint resist is imprinted by an imprinting sub-plate complementary to the imprint master, forming a number of patterned mask structures including structures corresponding to the imprint master to form a number of periodic arrays of stepped mask structure units including compensation structure units to distinguish from existing mask structures.
S6: etching the patterned mask structure to obtain an etched grating structure;
As shown in fig. 9, the mask structure is etched by an etching process based on the mask structure in step S5 to form a desired grating structure.
Further, with reference to fig. 10, fig. 10 is an SEM schematic diagram of a grating structure etched by the method for correcting the grating morphology, and the grating structure is etched based on the master mask and the method steps for correcting the grating morphology, as shown in the drawing, compared with the grating structure before correcting the morphology in fig. 2, the top "shrinkage" phenomenon of the etched transfer structure is obviously improved, the etching top-cutting disappears, the deviation of upper teeth and lower teeth of the grating structure is extremely small, and the etching verticality is more than 87 degrees; therefore, the method and the device have the advantages that the imprinting master structure is compensated, the imprinting compensation structure is arranged, the related structural parameters of the compensation structure are limited based on the conventional etching process, so that the conventional imprinting master structure is compensated and corrected, the effect of correcting the etching transfer morphology can be achieved, the conventional etching process is greatly improved, the grating structure with good morphology is obtained, meanwhile, the diffraction efficiency of the grating is improved, and the method and the device have unexpected technical effects for those skilled in the art.
In some embodiments, the present invention further provides a diffractive optical waveguide that is embossed and etched from a grating profile correction embossing master as described above, or is prepared by a grating profile correction method as provided in the previous embodiments.
Further, the present invention provides a near-eye display device comprising the diffractive optical waveguide provided by the foregoing embodiments.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. The grating morphology correction imprint master comprises a plurality of imprinting units which are arranged on the surface of a substrate and are periodically arranged, and is characterized in that each imprinting unit comprises an imprinting structure and an imprinting compensation structure, the imprinting structures are covered and attached to part of the surface of the substrate, the imprinting compensation structures are attached to one end, close to the substrate, of each imprinting structure in the two sides of the periodic direction of the imprinting structures and along the extending direction of the imprinting structures, the imprinting compensation structures are in contact with the substrate, and the height of each imprinting compensation structure is smaller than that of each imprinting structure;
the imprinting compensation structure parameters satisfy the following relation:
Wherein DeltaD represents the unilateral compensation width of the imprinting compensation structure, W 1 represents the upper tooth width of the grating obtained by a conventional imprinting etching process, W 2 represents the lower tooth width of the grating obtained by a conventional imprinting etching process, S represents the etching selection ratio of imprinting glue to grating material, deltaH represents the height of the imprinting compensation structure, H 0 represents the thickness of the imprinting glue, H represents the height of the imprinting unit, and P represents the period of the imprinting structure.
2. The grating topography correction imprint master of claim 1, wherein the imprint structure, the imprint compensation structure, and the substrate are integrally formed.
3. The grating topography correction imprint master of claim 1, wherein the imprint structure, the imprint compensation structure, and the substrate are each individually moldable and reconfigurable to form a unitary structure.
4. The grating profile correction imprint master of claim 1 or 2, wherein the imprint compensation structure surrounds and conforms to an end of the imprint structure proximate to the substrate.
5. A grating profile correction method for correcting an imprint master based on the grating profile provided in any one of claims 1 to 4, the method comprising the steps of:
s1: obtaining grating structure parameters of actual etching based on a conventional imprinting etching process;
S2: compensating and correcting the imprinting master plate based on the grating structure parameters obtained in the step S1 to obtain the structure parameters of the corrected imprinting unit and preparing the imprinting master plate; the corrected stamping unit comprises a stamping structure and a stamping compensation structure, the stamping structure covers and is attached to part of the surface of the substrate, the stamping compensation structure is attached to one end, close to the substrate, of the stamping structure along the extending direction of the stamping structure, and the stamping compensation structure is in contact with the substrate;
s3: forming a structurally complementary imprint sub-plate based on the imprint master of step S2;
s4: coating a layer of imprinting glue on the surface of the wafer, and homogenizing the glue;
s5: stamping the stamping glue through the stamping plate in the step S3 to form a patterned mask structure;
s6: and etching the patterned mask structure to obtain an etched grating structure.
6. The method according to claim 5, wherein in the step S1, the grating structure parameters include: grating upper tooth width W 1 obtained by conventional imprint lithography process, and grating lower tooth width W 2 obtained by conventional imprint lithography process.
7. A grating profile correction method according to claim 5 or 6, characterized in that in step S2, the imprint-compensated structure parameters satisfy the following relation:
Wherein DeltaD represents the unilateral compensation width of the imprinting compensation structure, W 1 represents the upper tooth width of the grating obtained by a conventional imprinting etching process, W 2 represents the lower tooth width of the grating obtained by a conventional imprinting etching process, S represents the etching selection ratio of imprinting glue to grating material, deltaH represents the height of the imprinting compensation structure, H 0 represents the thickness of the imprinting glue, H represents the height of the imprinting unit, and P represents the period of the imprinting structure.
8. The method for correcting the grating morphology according to claim 7, wherein H 0 is not less than 100nm.
9. A diffractive optical waveguide, characterized in that it is embossed by a grating topography correcting imprint master according to any one of claims 1 to 4 or is produced by a grating topography correcting method according to any one of claims 5 to 8.
10. A near-eye display device comprising the diffractive optical waveguide of claim 9.
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| CN105652590A (en) * | 2014-12-04 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Manufacturing method of coining template |
| CN116819664A (en) * | 2023-06-19 | 2023-09-29 | 慕德微纳(杭州)科技有限公司 | Method for processing diffraction optical element by controlling thickness of residual adhesive layer through template |
| WO2024046111A1 (en) * | 2022-08-31 | 2024-03-07 | 上海鲲游科技有限公司 | Preparation method for diffractive optical waveguide, diffractive optical waveguide, and imprinting master mold |
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| CN103257383A (en) * | 2013-04-16 | 2013-08-21 | 华中科技大学 | Preparation method of blazing-angle-variable blazed grating and double-blazed grating and products |
| CN105652590A (en) * | 2014-12-04 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Manufacturing method of coining template |
| WO2024046111A1 (en) * | 2022-08-31 | 2024-03-07 | 上海鲲游科技有限公司 | Preparation method for diffractive optical waveguide, diffractive optical waveguide, and imprinting master mold |
| CN116819664A (en) * | 2023-06-19 | 2023-09-29 | 慕德微纳(杭州)科技有限公司 | Method for processing diffraction optical element by controlling thickness of residual adhesive layer through template |
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