CN117841204A - Device and method for bonding crystal ingot and detecting crystal orientation - Google Patents

Abstract

The application discloses device and method that crystal ingot bonds and crystal orientation detected, the device includes bonding platform, hold the tray and at least one bonds frock, bonding platform's top is provided with crystal ingot bonding system and crystal orientation detecting system, crystal ingot bonding system includes waxing subassembly, unloading subassembly, press subassembly and cooling module, waxing subassembly, unloading subassembly, press subassembly and cooling module have waxing station respectively, unloading station, press station and cooling station, crystal orientation detecting system has the detection station, waxing station, unloading station, press station, cooling station and adjustment station are circular interval in proper order with the center of holding the tray and set up on bonding platform, bonding frock and hold the tray cooperation, and then hold the tray intermittent type nature rotation in order to drive bonding frock and remove in proper order between five stations, accomplish the preparation operation before the silicon carbide crystal ingot shaping processing, solve the problem of traditional personnel manual bonding, shorten operating time, improve work efficiency.

Description

Device and method for bonding crystal ingot and detecting crystal orientation

Technical Field

The application relates to the technical field of semiconductor wafer processing, in particular to a device and a method for bonding a crystal ingot and detecting crystal orientation.

Background

The silicon carbide substrate processing technology is complex, the flow is long, and the bonding and fixing of the silicon carbide crystal ingot and the crystal orientation detection technology must be completed before the silicon carbide crystal ingot is put into the forming processing, so that the silicon carbide crystal ingot meets the requirements of the forming processing. In the field of upstream wax-sticking and bonding processing of silicon carbide wafers, the wax-sticking process needs a plurality of steps such as heating, waxing, sticking, tabletting, waxing and the like, and most of the silicon carbide crystal ingot bonding processing in the current industry still relies on manual wax sticking.

When the manual wax pasting of workman is needed to be subjected to operations such as manual waxing, manual pressing, natural cooling, manual crystal orientation detection, and the like, in view of the thickness of the wax layer and the difference of proficiency of the manual surface pasting of the crystal ingot, the air around the crystal ingot is easy to cause waxing bubbles, if the air cannot be timely discharged in the process of compacting the crystal ingot, the air bubbles are caused in the middle of the wax layer, the bonding quality is greatly influenced by human factors, the production quality is unstable, the wax layer is uneven, and the like, and meanwhile, a great amount of time is needed for manual wax pasting, the production efficiency is lower, so that the mode of manual wax pasting is unfavorable for the wax pasting of the crystal ingot, the working efficiency is reduced, and the enterprise cost is increased.

Disclosure of Invention

An object of the application is to provide a device that crystal ingot bonds and crystal orientation detected to solve the inhomogeneous, unstable scheduling problem of production quality of wax layer, improve yield and the productivity of product, optimize the processing flow.

It is another object of the present application to provide a method of crystal ingot bonding and crystal orientation detection.

In order to achieve the above purpose, the technical scheme adopted in the application is as follows: the device for bonding and detecting the crystal orientation of the crystal ingot is characterized by comprising:

the crystal ingot bonding system and the crystal orientation detection system are arranged at the top of the bonding platform;

the supporting plate is rotatably arranged on the bonding platform and is suitable for intermittently rotating along the central axis of the bonding platform;

the bonding tool is provided with an annular positioning bulge, and the inner wall of the positioning bulge defines a bonding space for accommodating the silicon carbide crystal ingot;

the crystal ingot bonding system comprises a waxing assembly, a blanking assembly, a pressing assembly and a cooling assembly, wherein the waxing assembly, the blanking assembly, the pressing assembly and the cooling assembly are respectively provided with a waxing station, a blanking station, a pressing station and a cooling station, the crystal orientation detection system comprises a detection assembly, the detection assembly is provided with a detection station, the waxing station, the blanking station, the pressing station, the cooling station and the detection station are arranged on the bonding platform at intervals in a circular shape in sequence at the center of the tray, the bonding tool is matched with the supporting tray, and then the tray can intermittently rotate to drive the bonding tool to sequentially move between five stations.

Preferably, the diameter of the bonding space is the same as the diameter of the silicon carbide ingot, and the positioning protrusion is adapted to restrict displacement of the silicon carbide ingot relative to the bonding tool when the silicon carbide ingot is bonded in the bonding space, and the positioning protrusion is configured such that the height of the positioning protrusion is lower than the arc surface of the silicon carbide ingot when the silicon carbide ingot is disposed in the bonding space.

As another preferred, the waxing component comprises a control part and a spraying part, wherein the control part and the spraying part are arranged on the bonding platform, the spraying part comprises a wax storage bin for storing bonding wax and a wax injection bin communicated with the wax storage bin, an electromagnetic valve electrically connected with the control part is arranged between the wax injection bin and the wax storage bin, a constant temperature part is wrapped outside the wax injection bin and is suitable for heating the bonding wax in the wax injection bin, a spray head is further arranged on the wax injection bin and is configured to be opposite to the bonding tool when the bonding tool is positioned at a waxing station, and the spray head is electrically connected with the control part, so that the spray head can quantitatively and uniformly spray the bonding wax in the wax injection bin on the bonding tool under the control of the control part.

Still preferably, the blanking assembly comprises a first material channel extending along a horizontal direction and a second material channel extending along a vertical direction, one end of the first material channel is communicated with the silicon carbide ingot bin, the other end of the first material channel is communicated with the second material channel, the second material channel is configured to enable a discharge hole of the second material channel to be right opposite to the bonding tool when the bonding tool is located at the blanking station, a feeding assembly is arranged in the first material channel, the feeding assembly is suitable for pushing the silicon carbide ingot in the first material channel into the second material channel along the horizontal direction, a blanking cylinder is arranged in the second material channel, and the free end of a piston rod of the blanking cylinder can push the silicon carbide ingot in the second material channel onto the bonding tool along the vertical direction.

Further, the diameter of the inner wall of the second material channel is the same as that of the silicon carbide ingot, and when the silicon carbide ingot is pushed into the second material channel, the outer side wall of the silicon carbide ingot is contacted with the inner wall of the second material channel so as to limit the silicon carbide ingot from sliding downwards along the vertical direction.

Further, press the subassembly including setting up the cylinder support on the bonding platform, be provided with on the cylinder support and press the cylinder, still be provided with the silica gel pressure head on pressing the piston rod free end of cylinder, press the cylinder to dispose as when bonding frock is located presses the station the silica gel pressure head just to bonding frock.

Further, the cooling assembly comprises a cooling water tank and a water pump arranged in the cooling water tank, a cooling pipeline is arranged in the cooling station, one end of the cooling pipeline is connected with a water outlet of the cooling water tank, the other end of the cooling pipeline is connected with a water inlet of the cooling water tank, and the water pump can drive cooling water to flow so as to flow into the cooling station, and the bonding tool on the cooling station is cooled.

Further, the detection assembly comprises a detection support, an emitting tube and a receiving tube, wherein the emitting tube and the receiving tube are arranged on the detection support, the emitting tube and the receiving tube are arranged in an included angle mode, the emitting tube is suitable for emitting X rays, and the receiving tube is suitable for receiving the X rays reflected by the silicon carbide crystal ingot and emitting feedback signals according to the received X rays.

Further, the detection assembly further comprises a filter assembly detachably connected to the detection support, the filter assembly is arranged between the emitting tube and the silicon carbide crystal ingot and is provided with a filter hole and a filter piece, the filter piece is arranged in the filter hole, and X-rays emitted by the emitting tube are filtered through the filter piece.

The method for bonding and detecting the crystal orientation of the crystal ingot is characterized by comprising the following steps of:

s1: placing the bonding tool on a waxing station, controlling the opening of an electromagnetic valve by a control part, quantitatively conveying bonding wax to a wax injection bin by a wax storage bin, heating the bonding wax in the wax injection bin by a constant temperature part, and quantitatively and uniformly spraying the bonding wax in the wax injection bin on the bonding tool by a control part by a spray head after the bonding wax is heated;

s2: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the waxing station to the blanking station, the feeding assembly in the first material channel pushes the silicon carbide crystal ingot into the second material channel along the horizontal direction, and the free end of the piston rod of the blanking cylinder in the second material channel pushes the silicon carbide crystal ingot in the second material channel out of the second material channel along the vertical direction, so that the silicon carbide crystal ingot is placed in the bonding space of the bonding tool;

s3: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the blanking station to the pressing station, the pressing cylinder drives the silica gel pressing head to press the silicon carbide crystal ingot, and the silicon carbide crystal ingot is compacted with the tool;

s4: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the pressing station to the cooling station, the water pump in the cooling water tank is started, cooling water flows into the cooling pipeline of the cooling station under the driving of the water pump, and the bonding tool on the cooling station is cooled, so that bonding wax between the bonding tool and the silicon carbide crystal ingot is quickly solidified;

s5: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the cooling station to the detection station, the emitting tube emits X rays, the X rays are received by the receiving tube after being reflected by the silicon carbide crystal ingot, and the receiving tube judges whether the crystal orientation end face of the silicon carbide crystal ingot meets the requirements or not according to the received X rays and emits a qualified or unqualified feedback signal.

Compared with the prior art, the beneficial effect of this application lies in:

the device that the utility model provides a crystal ingot bonds and crystal orientation detects includes waxing station, unloading station, presses station, cooling station and detects the station, bonds crystal ingot in the preparation of carborundum crystal ingot shaping front end, crystal ingot cooling, crystal orientation detection integrated to an equipment, makes the device can accomplish the preparation operation before the carborundum crystal ingot shaping processing voluntarily, solves the problem of manual bonding in the traditional bonding technology, shortens the time of bonding operation greatly, realizes automatic pipelining, improves work efficiency.

Drawings

FIG. 1 is a schematic perspective view of an ingot bonding and orientation detection apparatus of the present application;

FIG. 2 is a schematic view of the bonding stage of the ingot bonding and crystal orientation detection apparatus of the present application;

FIG. 3 is a schematic view of the structure of the support tray in the ingot bonding and orientation detection apparatus of the present application;

FIG. 4 is a schematic view of the bonding tool and silicon carbide ingot in the ingot bonding and orientation detection apparatus of the present application;

FIG. 5 is a schematic view of the structure of the waxing assembly of the ingot bonding and orientation detection apparatus of the present application;

FIG. 6 is a schematic view of the structure of the blanking assembly of the ingot bonding and crystal orientation detection apparatus of the present application;

FIG. 7 is a schematic view of the structure of the pressing assembly of the ingot bonding and orientation detecting apparatus of the present application;

FIG. 8 is an enlarged view of a portion of the cooling assembly of FIG. 2A;

fig. 9 is a schematic structural view of a detecting assembly in the crystal orientation detecting apparatus for bonding an ingot according to the present application.

In the figure: 100. a bonding platform; 110. a sliding platform; 200. a tray; 210. a drive assembly; 220. a station hole; 300. bonding tool; 310. positioning the bulge; 320. a bonding space; 400. a waxing assembly; 410. a waxing station; 420. a control unit; 430. a spraying part; 431. a wax storage bin; 432. a wax injection bin; 433. a constant temperature part; 434. a spray head; 500. a blanking assembly; 510. a blanking station; 520. a first material channel; 530. a second material channel; 540. a blanking cylinder; 600. a pressing assembly; 610. a pressing station; 620. a cylinder bracket; 630. a pressing cylinder; 640. a silica gel pressure head; 700. a cooling assembly; 710. a cooling station; 720. a cooling water tank; 730. a cooling pipe; 800. a detection assembly; 810. detecting a station; 820. detecting a bracket; 830. a transmitting tube; 840. a receiving tube; 850. a filter assembly; 900. silicon carbide ingot.

Detailed Description

The present application will be further described with reference to the specific embodiments, and it should be noted that, on the premise of no conflict, new embodiments may be formed by any combination of the embodiments or technical features described below.

In the description of the present application, it should be noted that, for the azimuth terms such as terms "center", "lateral", "longitudinal", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., the azimuth and positional relationships are based on the azimuth or positional relationships shown in the drawings, it is merely for convenience of describing the present application and simplifying the description, and it is not to be construed as limiting the specific protection scope of the present application that the device or element referred to must have a specific azimuth configuration and operation, as indicated or implied.

It should be noted that the terms "first," "second," and the like in the description and in the claims of the present application are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.

The terms "comprises" and "comprising," along with any variations thereof, in the description and claims of the present application are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements that are expressly listed or inherent to such process, method, article, or apparatus.

One aspect of the present application provides an apparatus for ingot bonding and crystal orientation detection, as shown in fig. 1, wherein a preferred embodiment includes a bonding stage 100, a carrier tray 200, a bonding tool 300, an ingot bonding system, and a crystal orientation adjustment system. The ingot bonding system and the crystal orientation detection system are arranged at the top of the bonding platform 100, the ingot bonding system comprises a waxing component 400, a blanking component 500, a pressing component 600 and a cooling component 700, the waxing component 400, the blanking component 500, the pressing component 600 and the cooling component 700 are respectively provided with a waxing station 410, a blanking station 510, a pressing station 610 and a cooling station 710, the crystal orientation detection system is provided with a detection station 810, and the waxing station 410, the blanking station 510, the pressing station 610, the cooling station 710 and the detection station 810 are sequentially and evenly arranged on the bonding platform 100 at intervals in a circular shape with the center of the tray 200, namely, the distances between two adjacent stations are the same. The silicon carbide ingot 900 is suitable for bonding on the bonding tool 300, the bonding tool 300 is slidably arranged at the top of the bonding platform 100, the bearing plate 200 is rotatably arranged at the top of the bonding platform 100, and then the bearing plate 200 can intermittently rotate along the central axis of the bonding platform 100 so as to drive the bonding tool 300 to sequentially move among five stations, and the procedures of tool waxing, ingot blanking, ingot pressing, ingot cooling and ingot adjustment are completed. The utility model provides a crystal ingot bonds and crystal orientation detection device can be with crystal ingot bonding, crystal ingot cooling, the crystal orientation detection in the preparation of crystal ingot shaping front end are integrated to an equipment, make it can accomplish the preparation seat before the shaping processing voluntarily, solve the manual problem of bonding of personnel in the tradition bonding technology, can shorten operating time greatly, improve work efficiency, realize automatic pipelining.

As shown in fig. 4, the bonding tool 300 is provided with an annular positioning protrusion 310, the inner wall of the positioning protrusion 310 defines a bonding space 320, the diameter of the bonding space 320 is matched with the diameter of the silicon carbide ingot 900, and when the silicon carbide ingot 900 is placed in the bonding space 320, the positioning protrusion 310 can limit the movement of the silicon carbide ingot 900 relative to the bonding tool 300, so that the silicon carbide ingot 900 is prevented from sliding when the bonding wax is uncured at the initial stage of bonding. The positioning protrusions 310 are configured such that the height of the positioning protrusions 310 is lower than the arc surface of the silicon carbide ingot 900 when the silicon carbide ingot 900 is placed in the bonding space 320, so that the height of the positioning protrusions 310 does not affect the polishing formation of the arc surface of the silicon carbide crystal in the subsequent process.

Further, the waxing station 410, the blanking station 510, the pressing station 610, the cooling station 710 and the adjusting station are arranged at the top of the bonding platform 100, a sliding platform 110 is further arranged between two adjacent stations, and the top of the sliding platform 110 is flush with the tops of the five stations and is in the same plane to form a bonding plane. The tray 200 is in transmission connection with the driving component 210, the driving component 210 is arranged in the space inside the sliding platform 110, the driving component 210 is suitable for driving the tray 200 to intermittently rotate, the tray 200 is provided with a station hole 220 for accommodating the bonding tool 300, the diameter of the station hole 220 is matched with the diameter of the bonding tool 300, when the bonding tool 300 is arranged in the station hole 220, the inner wall of the station hole 220 is abutted to the outer side wall of the bonding tool 300, and then when the driving component 210 drives the tray 200 to rotate, the tray 200 can drive the bonding tool 300 positioned in the station hole 220 to slide on the bonding plane, so that the bonding tool 300 moves from one station to the other station through the sliding platform 110. Specifically, in the embodiment shown in fig. 1, the device includes five bonding tools 300, five station holes 220 are correspondingly provided on the carrier 200, and the five station holes 220 are distributed in a circular shape and correspond to the five stations one by one, so that the bonding tools 300 in the five station holes 220 can be located at different stations to perform different processes at the same time, thereby improving the working efficiency.

As shown in fig. 5, the waxing assembly 400 includes a control portion 420 and a spraying portion 430 disposed on the bonding platform 100, the spraying portion 430 includes a wax storage bin 431 and a wax injection bin 432, the wax storage bin 431 is communicated with the wax injection bin 432, an electromagnetic valve is disposed between the wax storage bin 431 and the wax injection bin 432, the electromagnetic valve is electrically connected with the control portion 420, the control portion 420 can control the electromagnetic valve to open and close so as to quantitatively convey bonding wax to the wax injection bin 432, the spraying portion 430 further includes a constant temperature portion 433, the constant temperature portion 433 is wrapped on an outer wall of the wax injection bin 432, the constant temperature portion 433 is suitable for heating the bonding wax in the wax injection bin 432, a spray head 434 in communication connection with the control portion 420 is disposed at the bottom of the wax injection bin 432, and the spray head 434 is configured such that when the bonding tool 300 is located at the waxing station 410, the spray head 434 is opposite to the bonding tool 300. When the bonding tool 300 is located at the waxing station 410, the spray head 434 is located right above the bonding tool 300, the spray head 434 is aligned to the bonding space 320 of the bonding tool 300, the control part 420 can control the electromagnetic valve to be opened and closed so as to quantitatively convey bonding wax to the wax injection bin 432, after the bonding wax in the wax injection bin 432 is heated by the constant temperature part 433, the control part 420 controls the spray head 434 to quantitatively and uniformly spray the bonding wax in the wax injection bin 432 into the bonding space 320 of the bonding tool 300, and the waxing procedure is completed.

As shown in fig. 6, the blanking assembly 500 includes a first material channel 520 extending along a horizontal direction and a second material channel 530 extending along a vertical direction, the first material channel 520 is in a cuboid shape, the second material channel 530 is in a cylinder shape, one end of the first material channel 520 is communicated with a bin of the silicon carbide ingot 900, the other end of the first material channel 520 is communicated with the second material channel 530, a feeding assembly is arranged in the first material channel 520, the feeding assembly is suitable for pushing the silicon carbide ingot 900 in the first material channel 520 to slide into the second material channel 530 from the first material channel 520 along a direction perpendicular to a central axis of the silicon carbide ingot 900, a blanking cylinder 540 is arranged on the second material channel 530, the blanking cylinder 540 is suitable for driving a piston rod to reciprocate along the vertical direction, a free end of the piston rod can push the silicon carbide ingot 900 in the second material channel 530 out of the second material channel 530 along the direction of the central axis of the silicon carbide ingot 900, the second material channel 530 is configured to be opposite to the bonding fixture 300 when the bonding fixture 300 is positioned at the blanking fixture 510, and then the second material channel 530 is pushed out of the bonding fixture 300 by the blanking cylinder 540 to bond the silicon carbide ingot 900 in the space 300 by the bonding fixture 300.

Specifically, the bin of the silicon carbide ingot 900 is cylindrical and extends in the vertical direction, the diameter of the bin is slightly larger than that of the silicon carbide ingot 900, the silicon carbide ingot 900 is stacked in the bin in the vertical direction, the first material channel 520 is arranged on the side surface of the bottom of the bin and is communicated with the bin, the feeding component is a roller group arranged on the bottom of the bin, the roller group is suitable for rolling to convey the silicon carbide ingot 900 which is assembled with the roller group at the lowest position of the bin into the first material channel 520, then the silicon carbide ingot 900 above falls down, a new silicon carbide ingot 900 contacts with the roller group, the roller group rolls again to convey the silicon carbide ingot 900 into the first material channel 520, the second conveyed silicon carbide ingot 900 is pushed into the second material channel 530 by the blanking cylinder 540 in the second material channel 530, the silicon carbide ingot 900 is pushed out of the second material channel 530, and the silicon carbide ingot 900 is placed on the bonding tool 300. Of course, the feeding assembly may be other structures, such as a feeding cylinder, a feeding motor, etc.

It is noted that the diameter of the inner wall of the second channel 530 is the same as the diameter of the silicon carbide ingot 900, and when the silicon carbide ingot 900 is pushed into the second channel 530, the outer wall of the silicon carbide ingot 900 contacts with the inner wall of the second channel 530 to generate friction force, so that the silicon carbide ingot 900 can be limited to slide downwards in the second channel 530 along the vertical direction under the action of self gravity.

As shown in fig. 7, the pressing assembly 600 includes a cylinder support 620 and a pressing cylinder 630, the cylinder support 620 is disposed on the bonding platform 100, the pressing cylinder 630 is disposed on the cylinder support 620, a silica gel pressing head 640 is disposed at a free end of a piston rod of the pressing cylinder 630, the pressing cylinder 630 is configured such that the silica gel pressing head 640 faces the bonding tool 300 when the bonding tool 300 is located at the pressing station 610, the silica gel pressing head 640 is soft, the silicon carbide ingot 900 is prevented from being cracked and crushed during pressing, the pressure of the pressing cylinder 630 and the stroke of the piston rod are adjustable, and the pressing cylinder 630 can be further adjusted to a proper parameter according to the silicon carbide ingots 900 with different thicknesses and the bonding tool 300, so that the bonding wax between the silicon carbide ingot 900 and the bonding tool 300 is uniformly distributed.

As shown in fig. 8, the cooling assembly 700 includes a cooling water tank 720 disposed on the bonding platform 100 and a water pump disposed in the cooling water tank 720, a cooling pipe 730 is disposed in the cooling station 710, one end of the cooling pipe 730 is connected with a water inlet of the cooling water tank 720, and the other end of the cooling pipe 730 is connected with a water outlet of the cooling water tank 720, so that the cooling water pump in the cooling water tank 720 can drive the cooling water to enter the cooling pipe 730 from the water outlet of the cooling water tank 720, thereby reducing the temperature of the cooling station 710, cooling the bonding tool 300 on the cooling station 710, accelerating the bonding wax hardening between the bonding tool 300 and the silicon carbide ingot 900, and completing the bonding of the silicon carbide ingot 900. The cooling unit 700 may use a liquid coolant such as cooling water, or a gas coolant such as liquid nitrogen.

As shown in fig. 9, the inspection assembly 800 includes an inspection support 820, an emission tube 830 and a receiving tube 840, wherein the emission tube 830 and the receiving tube 840 are rotatably connected to the inspection support 820, respectively, that is, the emission tube 830 and the receiving tube 840 can be rotated on the inspection support 820 to change the angles of the emission tube 830 and the receiving tube 840, so that a user can adjust the angles of the emission tube 830 and the receiving tube 840 for the silicon carbide ingots 900 of different sizes to inspect the ingots. Specifically, before detecting the crystal orientation of the silicon carbide ingot 900, the user may place the silicon carbide ingot 900 with the crystal orientation that meets the condition on the detection station 810 together with the bonding tool 300, and then manually adjust the angles of the transmitting tube 830 and the receiving tube 840 until the receiving tube 840 can receive the X-rays reflected by the silicon carbide ingot 900 and send out a qualified feedback signal, thereby completing the adjustment work before the detection.

The detecting assembly 800 further includes a filter assembly 850, the filter assembly 850 is detachably connected to the detecting support 820, the filter assembly 850 is disposed between the generating tube and the silicon carbide ingot 900, the filter assembly 850 has a filter hole and a filter plate, the filter plate is disposed in the filter hole, the X-rays emitted from the emitting tube 830 are irradiated onto the silicon carbide ingot 900 after passing through the filter plate, the X-rays are received by the receiving tube 840 after being reflected by the silicon carbide ingot 900, the receiving tube 840 is adapted to emit a qualified or unqualified feedback signal according to the received X-rays, and when the crystal orientation end face of the silicon carbide ingot 900 is 17 ° 49' ±0.1°, the receiving tube 840 emits a qualified feedback signal.

Another aspect of the present application provides a method of crystal ingot bonding and crystal orientation detection that may be implemented using the apparatus for crystal ingot bonding and crystal orientation detection described above, wherein a preferred embodiment includes the following steps:

s1: placing the bonding tool 300 on the waxing station 410, controlling the opening of an electromagnetic valve by the control part 420, quantitatively conveying bonding wax to the wax injection bin 432 by the wax storage bin 431, heating the bonding wax in the wax injection bin 432 by the constant temperature part 433, and quantitatively and uniformly spraying the bonding wax in the wax injection bin 432 on the bonding tool 300 by the control part 420 by controlling the spray head 434 after the bonding wax is heated;

s2: the driving assembly 210 drives the tray 200 to rotate, the tray 200 drives the bonding tool 300 to move from the waxing station 410 to the blanking station 510, the feeding assembly in the first material channel 520 pushes the silicon carbide ingot 900 into the second material channel 530 along the horizontal direction, and the free end of the piston rod of the blanking cylinder 540 in the second material channel 530 pushes the silicon carbide ingot 900 in the second material channel 530 out of the second material channel 530 along the vertical direction, so that the silicon carbide ingot 900 is placed in the bonding space 320 of the bonding tool 300;

s3: the driving assembly 210 drives the tray 200 to rotate, the tray 200 drives the bonding tool 300 to move from the blanking station 510 to the pressing station 610, and the pressing cylinder 630 drives the silica gel pressing head to press the silicon carbide ingot 900, so that the silicon carbide ingot 900 is compacted with the tool;

s4: the driving assembly 210 drives the tray 200 to rotate, the tray 200 drives the bonding tool 300 to move from the pressing station 610 to the cooling station 710, a water pump in the cooling water tank 720 is started, cooling water flows into a cooling pipeline 730 of the cooling station 710 under the driving of the water pump, and the bonding tool 300 on the cooling station 710 is cooled, so that bonding wax between the bonding tool 300 and the silicon carbide ingot 900 is quickly solidified;

s5: the driving assembly 210 drives the tray 200 to rotate, the tray 200 drives the bonding tool 300 to move from the cooling station 710 to the detection station 810, the emitting tube 830 emits X-rays, the X-rays are reflected by the silicon carbide ingot 900 and then received by the receiving tube 840, and the receiving tube 840 judges whether the crystal orientation end face of the silicon carbide ingot 900 meets the requirements or not according to the received X-rays and emits a qualified or unqualified feedback signal.

The foregoing has outlined the basic principles, main features and advantages of the present application. It will be appreciated by persons skilled in the art that the present application is not limited to the embodiments described above, and that the embodiments and descriptions described herein are merely illustrative of the principles of the present application, and that various changes and modifications may be made therein without departing from the spirit and scope of the application, which is defined by the appended claims. The scope of protection of the present application is defined by the appended claims and equivalents thereof.

Claims (10)

1. The device for bonding and detecting the crystal orientation of the crystal ingot is characterized by comprising:

the crystal ingot bonding system and the crystal orientation detection system are arranged at the top of the bonding platform;

the supporting plate is rotatably arranged on the bonding platform and is suitable for intermittently rotating along the central axis of the bonding platform;

the bonding tool is provided with an annular positioning bulge, and the inner wall of the positioning bulge defines a bonding space for accommodating the silicon carbide crystal ingot;

the crystal ingot bonding system comprises a waxing assembly, a blanking assembly, a pressing assembly and a cooling assembly, wherein the waxing assembly, the blanking assembly, the pressing assembly and the cooling assembly are respectively provided with a waxing station, a blanking station, a pressing station and a cooling station, the crystal orientation detection system is provided with a detection assembly, the detection assembly is provided with a detection station, the waxing station, the blanking station, the pressing station, the cooling station and the detection station are arranged on the bonding platform at intervals in a circular mode at the center of the tray, the bonding tool is matched with the supporting tray, and the tray can be intermittently rotated to drive the bonding tool to sequentially move among five stations.

2. An ingot bonding and crystal orientation apparatus as set forth in claim 1 wherein the bonding space has a diameter equal to a diameter of the silicon carbide ingot, and wherein the positioning projection is adapted to limit displacement of the silicon carbide ingot relative to the bonding tool when the silicon carbide ingot is bonded in the bonding space, and wherein the positioning projection is configured to have a height less than an arcuate surface of the silicon carbide ingot when the silicon carbide ingot is disposed in the bonding space.

3. An ingot bonding and crystal orientation inspection apparatus as set forth in claim 2 wherein the waxing assembly includes a control portion disposed on the bonding platform and a spray portion including a wax storage bin for storing bonding wax and a wax injection bin in communication with the wax storage bin, a solenoid valve in electrical communication with the control portion disposed between the wax injection bin and the wax storage bin, a thermostat portion wrapped around the wax injection bin and adapted to heat the bonding wax in the wax injection bin, a spray head disposed on the wax injection bin and configured to face the bonding tool when the bonding tool is in the waxing station, the spray head being in electrical communication with the control portion such that the spray head is capable of spraying the bonding wax in the wax injection bin quantitatively and uniformly onto the bonding tool under control of the control portion.

4. An ingot bonding and crystal orientation apparatus as set forth in claim 2 wherein the feed assembly includes a first channel extending in a horizontal direction and a second channel extending in a vertical direction, one end of the first channel being in communication with the silicon carbide ingot bin and the other end of the first channel being in communication with the second channel, the second channel being configured such that the discharge port of the second channel is facing the bonding tool when the bonding tool is in the feed station, a feed assembly being provided in the first channel, the feed assembly being adapted to push the silicon carbide ingot in the first channel into the second channel in a horizontal direction, a feed cylinder being provided in the second channel, the free end of the piston rod of the feed cylinder being adapted to push the silicon carbide ingot in the second channel onto the bonding tool in a vertical direction.

5. An ingot bonding and orientation unit as set forth in claim 4 wherein the diameter of the inner wall of the second channel is the same as the diameter of the silicon carbide ingot, and the outer sidewall of the silicon carbide ingot contacts the inner wall of the second channel to limit downward sliding of the silicon carbide ingot in the vertical direction when the silicon carbide ingot is pushed into the second channel.

6. An ingot bonding and crystal orientation apparatus as set forth in claim 2 wherein the pressing assembly includes a cylinder mount disposed on the bonding platform, a pressing cylinder disposed on the cylinder mount, a silica gel ram disposed on a free end of a piston rod of the pressing cylinder, the pressing cylinder configured such that the silica gel ram is directly opposite the bonding tool when the bonding tool is in the pressing station.

7. An ingot bonding and crystal orientation inspection apparatus as set forth in claim 2 wherein the cooling assembly includes a cooling water tank and a water pump disposed within the cooling water tank, a cooling conduit is disposed within the cooling station, one end of the cooling conduit is connected to a water outlet of the cooling water tank, and the other end of the cooling conduit is connected to a water inlet of the cooling water tank, whereby the water pump drives cooling water to flow into the cooling station for cooling the bonding tool at the cooling station.

8. An apparatus for ingot bonding and crystal orientation as set forth in claim 2 wherein the detection assembly includes a detection support, an emitter tube and a receiver tube, the emitter tube and the receiver tube being disposed on the detection support, the emitter tube and the receiver tube being disposed at an angle, the emitter tube being adapted to emit X-rays, the receiver tube being adapted to receive X-rays reflected from the silicon carbide ingot and to emit a feedback signal based on the received X-rays.

9. An apparatus for ingot bonding and crystal orientation as set forth in claim 8 wherein the detection assembly further comprises a filter assembly removably connected to the detection support, the filter assembly disposed between the emitter tube and the silicon carbide ingot, the filter assembly having a filter aperture and a filter plate disposed within the filter aperture, the X-rays emitted by the emitter tube being filtered by the filter plate.

10. The method for bonding and detecting the crystal orientation of the crystal ingot is characterized by comprising the following steps of:

s1: placing the bonding tool on a waxing station, controlling the opening of an electromagnetic valve by a control part, quantitatively conveying bonding wax to a wax injection bin by a wax storage bin, heating the bonding wax in the wax injection bin by a constant temperature part, and quantitatively and uniformly spraying the bonding wax in the wax injection bin on the bonding tool by a control part by a spray head after the bonding wax is heated;

s2: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the waxing station to the blanking station, the feeding assembly in the first material channel pushes the silicon carbide crystal ingot into the second material channel along the horizontal direction, and the free end of the piston rod of the blanking cylinder in the second material channel pushes the silicon carbide crystal ingot in the second material channel out of the second material channel along the vertical direction, so that the silicon carbide crystal ingot is placed in the bonding space of the bonding tool;

s3: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the blanking station to the pressing station, the pressing cylinder drives the silica gel pressing head to press the silicon carbide crystal ingot, and the silicon carbide crystal ingot is compacted with the tool;

s4: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the pressing station to the cooling station, the water pump in the cooling water tank is started, cooling water flows into the cooling pipeline of the cooling station under the driving of the water pump, and the bonding tool on the cooling station is cooled, so that bonding wax between the bonding tool and the silicon carbide crystal ingot is quickly solidified;

s5: the driving assembly drives the bearing plate to rotate, the bearing plate drives the bonding tool to move from the cooling station to the detection station, the emitting tube emits X rays, the X rays are received by the receiving tube after being reflected by the silicon carbide crystal ingot, and the receiving tube judges whether the crystal orientation end face of the silicon carbide crystal ingot meets the requirements or not according to the received X rays and emits a qualified or unqualified feedback signal.