CN117835754A - Display panel and display device - Google Patents
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the disclosure discloses a display panel and a display device. In a specific embodiment, the display panel comprises a substrate, and a driving circuit layer and a light-emitting functional layer which are stacked on the substrate, wherein the light-emitting functional layer comprises an anode, a light-emitting layer and a cathode which are stacked, a Bragg reflector layer is arranged on one side, far away from the light-emitting layer, of the anode or on one side, far away from the light-emitting layer, of the cathode, the Bragg reflector layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers which are stacked, the first dielectric layers and the second dielectric layers are stacked alternately, the refractive index of the first dielectric layers is different from that of the second dielectric layers, and the sum of the layers of the first dielectric layers and the second dielectric layers is more than or equal to 10. The embodiment can effectively improve the luminous efficiency of the display panel.
Description
Technical Field
The present disclosure relates to the field of display technology. And more particularly, to a display panel and a display device.
Background
Currently, with the development of display technology, an organic light emitting diode (Organic Light Emitting Diode, OLED) display panel increasingly requires a high pixel density (PPI), which means that the size of a single pixel is reduced, thereby placing a higher demand on the light emitting efficiency of the display panel.
Disclosure of Invention
An object of the present disclosure is to provide a display panel and a display device to solve at least one of the problems of the prior art.
In order to achieve the above purpose, the present disclosure adopts the following technical scheme:
the first aspect of the present disclosure provides a display panel, including a substrate and a driving circuit layer and a light-emitting functional layer that are stacked on the substrate, the light-emitting functional layer includes an anode, a light-emitting layer and a cathode that are stacked, a bragg mirror layer is disposed on a side of the anode, which is far away from the light-emitting layer, or on a side of the cathode, which is far away from the light-emitting layer, and the bragg mirror layer includes a plurality of first dielectric layers and a plurality of second dielectric layers that are stacked, the first dielectric layers and the second dielectric layers are stacked alternately, a refractive index of the first dielectric layers is different from a refractive index of the second dielectric layers, and a sum of layers of the first dielectric layers and the second dielectric layers is equal to or greater than 10.
Optionally, the material of the first dielectric layer is niobium pentoxide, titanium dioxide, zinc sulfide or tantalum pentoxide; the second dielectric layer is made of magnesium fluoride, silicon dioxide, aluminum fluoride or aluminum oxide.
Optionally, the material of the first dielectric layer is zinc niobium sulfide or titanium dioxide; the second dielectric layer is made of magnesium fluoride or aluminum fluoride.
Optionally, the thickness of the first dielectric layer and the thickness of the second dielectric layer are respectively in a range of 10nm-500nm.
Optionally, the orthographic projection of the bragg reflector layer on the substrate covers the orthographic projection of the light emitting functional layer on the substrate.
Optionally, the sum of the layers of the first dielectric layer and the second dielectric layer is greater than or equal to 20.
Optionally, the display panel includes a first sub-pixel, a second sub-pixel and a third sub-pixel arranged in an array, and the bragg mirror layer includes a first sub-bragg mirror layer located in the first sub-pixel, a second sub-bragg mirror layer located in the second sub-pixel and a third sub-bragg mirror layer located in the third sub-pixel.
Optionally, the sum of the layers of the first dielectric layer and the second dielectric layer in the first sub-bragg reflector layer, the second sub-bragg reflector layer and the third sub-bragg reflector layer is greater than or equal to 10 and less than 20 respectively.
Optionally, the display panel further includes a flat layer between the driving circuit layer and the light emitting function layer, and the bragg mirror layer is disposed between the flat layer and the anode.
Optionally, the bragg reflector layer is disposed on a side of the anode, which is far away from the light emitting layer, and the display panel further includes an encapsulation layer disposed on a side of the cathode, which is far away from the light emitting layer, and a first color film layer disposed on a side of the encapsulation layer, which is far away from the cathode.
Optionally, the bragg reflector layer is disposed on a side, away from the light emitting layer, of the cathode, and the display panel further includes a passivation layer on a side, away from the bragg reflector layer, of the anode, a flat layer on a side, away from the anode, of the passivation layer, and a second color film layer on a side, away from the anode, of the flat layer.
A second aspect of the present disclosure provides a display device including the display panel provided in the first aspect of the present disclosure.
The beneficial effects of the present disclosure are as follows:
according to the technical scheme, through the design of the Bragg reflector layer, the luminous efficiency of the display panel can be effectively improved, and the requirements of high pixel density and the like are met.
Drawings
The following describes in further detail the specific embodiments of the present disclosure with reference to the drawings.
Fig. 1 shows a schematic diagram of a display panel in the related art.
Fig. 2 is a schematic diagram of a display panel according to a first embodiment.
Fig. 3 shows a schematic diagram of a bragg mirror layer.
Fig. 4 shows a schematic of the reflectivity spectrum of bragg mirror layers of different dielectric layers.
Fig. 5 shows a schematic diagram of an aperture flow of the bragg reflector layer.
Fig. 6 shows another aperture flow diagram of a bragg mirror layer.
Fig. 7 is a schematic diagram of a display panel according to a second embodiment.
Fig. 8 shows a schematic diagram of a display panel provided in the third embodiment.
Fig. 9 shows a schematic diagram of a display panel provided in the fourth embodiment.
Fig. 10 is a schematic diagram of a display panel provided in the fifth embodiment.
Fig. 11 shows a schematic diagram of a display panel provided in the sixth embodiment.
Detailed Description
As used in this disclosure, "formed on … …," "formed on … …," and "disposed on … …" may mean that one layer is formed directly on or disposed on another layer, or that one layer is formed indirectly on or disposed on another layer, i.e., that other layers are present between the two layers.
It should be noted that although the terms "first," "second," etc. may be used herein to describe various elements, components, elements, regions, layers and/or sections, these elements, components, elements, regions, layers and/or sections should not be limited by these terms. Rather, these terms are used to distinguish one component, member, element, region, layer and/or section from another. Thus, for example, a first component, a first member, a first element, a first region, a first layer, and/or a first portion discussed below may be referred to as a second component, a second member, a second element, a second region, a second layer, and/or a second portion without departing from the teachings of the present disclosure.
In this disclosure, unless otherwise indicated, the term "co-layer disposed" is used to mean that two layers, components, members, elements, or portions may be formed by the same manufacturing process (e.g., patterning process, etc.), and that the two layers, components, members, elements, or portions are generally formed of the same material. For example, the two or more functional layers are arranged in the same layer, meaning that the functional layers arranged in the same layer may be formed using the same material layer and the same manufacturing process, so that the manufacturing process of the display substrate may be simplified.
In the present disclosure, unless otherwise indicated, the expression "patterning process" generally includes the steps of coating of photoresist, exposure, development, etching, stripping of photoresist, and the like. The expression "one patterning process" means a process of forming a patterned layer, feature, component, etc. using a single mask.
In the OLED display panel of the related art, for example, the top-emission OLED display panel shown in fig. 1 includes a substrate 101, and a buffer layer 102, a driving circuit layer 103, a planarization layer 104, a passivation layer 105, a light-emitting functional layer and a packaging layer 107, which are sequentially stacked on the substrate 101, the light-emitting functional layer includes an anode 1061, a light-emitting layer 1062 and a cathode 1063, which are stacked. In order to improve the light emitting efficiency, the anode 1051 is generally made of a metal material, so that a portion of the light emitted from the light emitting layer 1052, which exits toward the anode 1061, is reflected to display light. Among these three common materials, molybdenum (Mo), aluminum (Al), or silver (Ag) is generally selected as the metal reflective material of the anode 1061, and has low reflectivity, not significant improvement of luminous efficiency, and relatively high reflectivity of silver (Ag), but only 90% is achieved, which is considered by the inventor to have room for improvement.
In view of this, an embodiment of the disclosure provides a display panel, including a substrate and a driving circuit layer and a light-emitting functional layer that are stacked on the substrate, the light-emitting functional layer includes an anode, a light-emitting layer and a cathode that are stacked, a bragg mirror layer is disposed on a side of the anode that is far away from the light-emitting layer or on a side of the cathode that is far away from the light-emitting layer, the bragg mirror layer includes a plurality of first dielectric layers and a plurality of second dielectric layers that are stacked, the first dielectric layers and the second dielectric layers are alternately stacked, a refractive index of the first dielectric layer is different from a refractive index of the second dielectric layer, and a sum of layers of the first dielectric layer and the second dielectric layer is greater than or equal to 10.
The bragg reflector layer in this embodiment may also be referred to as a distributed bragg reflector (Distributed Bragg Reflector, DBR) layer, which is a periodic structure formed by alternately arranging first dielectric layers and second dielectric layers of different refractive indexes in an ABAB manner, and the optical thickness of each of the first dielectric layers and the second dielectric layers is 1/4 of the central reflection wavelength. The bragg reflector layer in the embodiment is equivalent to a group of photonic crystals, the sum of the layers of the first dielectric layer and the second dielectric layer is greater than or equal to 10, and the bragg reflector layer has high reflectivity for photons falling in the energy gap range or the forbidden band range, and the reflectivity can reach more than 99%.
The display panel provided by the embodiments of the present disclosure is specifically described below with reference to the accompanying drawings.
Example 1
As shown in fig. 2, a first embodiment provides a top-emitting OLED display panel, which includes a substrate 201, and a driving circuit layer and a light-emitting functional layer that are stacked on the substrate 201, wherein the light-emitting functional layer includes an anode 202, a light-emitting layer 203 and a cathode 204 that are stacked, and a bragg mirror layer 205 is disposed on a side of the anode 202 far from the light-emitting layer 203.
For example, as shown in fig. 3, the bragg mirror layer 205 includes a plurality of first dielectric layers 2051 and a plurality of second dielectric layers 2052 that are stacked, the first dielectric layers 2051 and the second dielectric layers 2052 are alternately stacked, the refractive index of the first dielectric layers 2051 is different from the refractive index of the second dielectric layers 2052, the sum of the layers of the first dielectric layers 2051 and the second dielectric layers 2052 is 10 or more, for example, the bragg mirror layer 205 shown in fig. 3 includes 5 first dielectric layers 2051 and 5 second dielectric layers 2052, and the sum of the layers of the first dielectric layers 2051 and the second dielectric layers 2052 is 10.
In the OLED display panel shown in fig. 2, the bragg reflector layer 205 with high reflectivity disposed on the side of the anode 202 far from the light-emitting layer 203 can reflect the portion of the light emitted from the light-emitting layer 203 and going out toward the anode 202 to display light, so as to effectively improve the light-emitting efficiency.
In one possible implementation, the material of the first dielectric layer 2051 is niobium pentoxide Nb 2 O 5 Titanium dioxide TiO 2 Zinc sulfide ZnS or tantalum pentoxide Ta 2 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer 2052 is magnesium fluoride MgF 2 Silicon dioxide SiO 2 Aluminum fluoride AlF 3 Or aluminum oxide Al 2 O 3 。
Based on the selection of the above materials, the refractive index of the material of the first dielectric layer 2051 with a high refractive index ranges from 1.8 to 2.4, and the refractive index of the second dielectric layer 2052 with a low refractive index ranges from 1.3 to 1.6, which is favorable for ensuring the refractive index difference between the first dielectric layer 2051 and the second dielectric layer 2052, thereby ensuring the high reflectivity of the bragg reflector layer 205.
In this embodiment, niobium pentoxide Nb is used as the material of the first dielectric layer 2051 having a high refractive index 2 O 5 Titanium dioxide TiO 2 Zinc sulfide ZnS and tantalum pentoxide Ta 2 O 5 The refractive index for visible light is shown in Table 1, and the material of the second dielectric layer 2052 with low refractive index is magnesium fluoride MgF 2 Silicon dioxide SiO 2 Aluminum fluoride AlF 3 And alumina Al 2 O 3 The refractive index for visible light is shown in table 2.
TABLE 1
| Material | ZnS | TiO 2 | Nb 2 O 5 | Ta 2 O 5 |
| Refractive index | 2.4 | 2.35 | 2.3 | 2.1 |
TABLE 2
| Material | AlF 3 | MgF 2 | SiO 2 | Al 2 O 3 |
| Refractive index | 1.35 | 1.38 | 1.46 | 1.6 |
It will be appreciated that in connection with the above implementation, for example, the first dielectric layer 2051 is a high refractive index dielectric layer and the second dielectric layer 2052 is a low refractive index dielectric layer in the bragg mirror layer 205 shown in fig. 3. In addition, a mode in which the first dielectric layer 2051 is a low refractive index dielectric layer and the second dielectric layer 2052 is a high refractive index dielectric layer may be employed.
It is understood that the sum of the layers of the first dielectric layer 2051 and the second dielectric layer 2052 in the bragg mirror layer 205 shown in fig. 3 is an even number, that is, the layers of the first dielectric layer 2051 and the second dielectric layer 2052 are the same. In addition, the sum of the layers of the first dielectric layer and the second dielectric layer in the Bragg reflector layer can also be an odd number, namely, the difference of the layers of the first dielectric layer and the second dielectric layer is 1 or-1.
In one possible implementation, the material of the first dielectric layer 2051 is zinc sulfide ZnS or titanium dioxide TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer 2052 is magnesium fluoride MgF 2 Or aluminum fluoride AlF 3 . Thus, the refractive index difference between the first dielectric layer 2051 and the second dielectric layer 2052 can be ensured to be larger, which is more beneficial to ensuring the high reflectivity of the bragg mirror layer 205.
In one possible implementation, the thickness of the first dielectric layer 2051 and the second dielectric layer 2052 may each have a thickness ranging from 10nm to 500nm. Thereby, it is advantageous to ensure high reflectivity of the bragg mirror layer 205.
In one possible implementation, in the first embodiment, the front projection of the bragg mirror layer 205 on the substrate 201 covers the front projection of the light emitting functional layer on the substrate 201. That is, the bragg mirror layer 205 in the OLED display panel shown in fig. 2 covers at least the display region of the OLED display panel, and reflects, for all the sub-pixels of the OLED display panel, a portion of the light emitted from the light-emitting layer 203, which is emitted in the direction of the anode 202, as display light.
In one possible implementation, the sum of the number of layers of the first dielectric layer 2051 and the second dielectric layer 2052 is 20 or more. Thus, it is advantageous to ensure the reflectivity of the Bragg reflector layer 205 for full spectrum visible light (e.g., visible light having wavelengths of 380nm-780 nm) including red, green, and blue light, and to adapt to the design in which the Bragg reflector layer 205 covers at least the display area portion of the OLED display panel over the entire surface.
In a specific example, the reflectivity spectrum of the bragg mirror layers 205 with five different structures is shown in fig. 4, where the five bragg mirror layers 205 are respectively indicated as DBR1, DBR2, DBR3, DBR4 and DBR5 in fig. 4, and the materials of the first dielectric layers 2051 of the five bragg mirror layers 205 are respectively niobium pentoxide Nb 2 O 5 The second dielectric layer 2052 is formed of silicon dioxide SiO respectively 2 The total number of layers of the first dielectric layer 2051 and the second dielectric layer 2052 of the DBR1 is 27, the total number of layers of the first dielectric layer 2051 and the second dielectric layer 2052 of the DBR2 is 25, the total number of layers of the first dielectric layer 2051 and the second dielectric layer 2052 of the DBR3 is 21, the total number of layers of the first dielectric layer 2051 and the second dielectric layer 2052 of the DBR4 is 17, the total number of layers of the first dielectric layer 2051 and the second dielectric layer 2052 of the DBR5 is 13, and specific structures of the DBR1, the DBR2, the DBR3, the DBR4, and the DBR5 and respective dielectric layer thicknesses are shown in table 3.
TABLE 3 Table 3
As shown in Table 3, the DBR1 had a thickness of 2165.06nm, DBR2 had a thickness of 1957.04nm, DBR3 had a total thickness of 1652.06nm, DBR4 had a thickness of 1335.07nm, and DBR5 had a thickness of 1020.95. In DBR1, nb is located in layer 1 from top to bottom 2 O 5 The high refractive first dielectric layer 2051 of material has a thickness of 53.42nm and is SiO on layer 2 2 Low refractive second medium of materialThe thickness of the mass layer 2052 is 88.22nm. In fig. 4, the ordinate indicates reflectance, and the abscissa indicates the wavelength of light in nm. As can be seen from fig. 4, the reflectivity of the DBR1, DBR2, and DBR3, which are formed by adding more than 20 layers of the first dielectric layer 2051 and the second dielectric layer 2052, for the full spectrum visible light (for example, visible light having wavelengths of 380nm to 780 nm) including red light, green light, and blue light, can be maintained at a level close to 100%.
In one possible implementation, as shown in fig. 2, the OLED display panel provided in the first embodiment further includes a flat layer 206 between the driving circuit layer and the light-emitting functional layer, and the bragg mirror layer 205 is disposed between the flat layer 206 and the anode 202. Therefore, in the top-emitting OLED display panel, the bragg reflector layer 205 of the inorganic material disposed between the flat layer 206 and the anode 202 can also play a role in protecting against water vapor, so that no passivation layer is required, which is beneficial to reducing the thickness of the OLED display panel and simplifying the structure and the manufacturing process of the OLED display panel.
In one possible implementation, as shown in fig. 2, the OLED display panel provided in the first embodiment further includes an encapsulation layer 207 located on a side of the cathode 204 away from the light emitting layer 203, and a first color film layer located on a side of the encapsulation layer 207 away from the cathode 204. For example, the OLED display panel shown in fig. 2 includes red sub-pixels, green sub-pixels and blue sub-pixels arranged in an array, the light emitting layer 203 emits white light, and the first color film layer includes a red light filter layer 2081 located in the red sub-pixels, a green light filter layer 2082 located in the green sub-pixels and a blue light filter layer 2083 located in the blue sub-pixels, so as to implement full-color display of the OLED display panel.
Next, with reference to the above implementation manner, each functional film layer in the OLED display panel provided in the first embodiment is further described:
as shown in fig. 2, the OLED display panel provided in the embodiment includes a substrate 201, and a light shielding layer 209, a buffer layer 210, a driving circuit layer, a flat layer 206, a bragg reflector layer 205, a pixel defining layer 212, a light emitting function layer, an encapsulation layer 207 and a first color film layer sequentially stacked on the substrate 201, where the driving circuit layer includes an active layer 2111, a gate insulating layer 2112, a gate electrode 2113, a dielectric layer 2114 and a source/drain metal layer 2115, the light emitting function layer includes an anode 202, a light emitting layer 203 and a cathode 204, and the first color film layer includes a red light filter layer 2081, a green light filter 2082 and a blue light filter 2083.
The substrate 201 may be a flexible substrate made of Polyimide (PI), polyethylene naphthalate (PEN), thermoplastic Polyester (PET), or the like, or may be a rigid substrate made of glass, quartz, or the like.
The orthographic projection of the light shielding Layer (LS) 209 on the substrate 201 coincides with the orthographic projection of the active layer 2111 on the substrate 201, and the light shielding layer 209 can shield the active layer 2111 and prevent light from irradiating the TFT structure from the backlight side of the substrate 201, so as to reduce the leakage risk of the driving transistor and the switching transistor due to illumination.
The Buffer layer (Buffer) 210 covers the light shielding layer 209 and the exposed substrate 201, for example, the Buffer layer 210 may be made of inorganic insulating materials such as silicon oxide, silicon nitride or silicon oxynitride, and the Buffer layer 210 is beneficial to the subsequent material deposition quality and also beneficial to the OLED formed after blocking water and oxygen from entering from the bottom.
The driving circuit layer may also be referred to as a Thin Film Transistor (TFT) layer including an Active layer (Active) 2111 formed on the buffer layer 210 by a patterning process, a Gate insulating layer (GI) 2112 formed on the Active layer 2111 by deposition or the like, a Gate (Gate) 2113 of the thin film transistor formed on the Gate insulating layer 2112 by a patterning process, a dielectric layer (ILD) 2114 formed on the Gate 2113 by deposition or the like, a Source-Drain metal layer 2115 formed on the dielectric layer 2114, the Source-Drain metal layer 2115 forming a Source (Source) and a Drain (Drain) of the thin film transistor, for example, the Gate 2113 being electrically connected to the scan line, the Source being electrically connected to the data line and being electrically connected to the Active layer 2111 through a first via penetrating the dielectric layer 2114 and the Gate insulating layer 2112, and the Drain being electrically connected to the Active layer 2111 through a second via penetrating the dielectric layer 2114 and the Gate insulating layer 2112. The active layer 2111 may be made of polysilicon, metal oxide, or the like, for example, the active layer 2111 may be a Low Temperature Polysilicon (LTPS) active layer or a Low Temperature Polysilicon Oxide (LTPO) active layer; the gate insulating layer 2112 can be made of an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride; the dielectric layer 2114 can be made of inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride; the material of the gate electrode 2113 includes a metal or alloy material such as aluminum, titanium, and cobalt.
A Planarization Layer (PLN) 206 covers the source drain metal layer 2115 and the exposed dielectric layer 2114, and the planarization layer 206 is, for example, an organic material.
The Anode (Anode) 202 is a metal oxide material such as Indium Tin Oxide (ITO), and the Anode 202 is electrically connected to the drain electrode through a third via penetrating the bragg mirror layer 205 and the planarization layer 206, for example.
The Pixel Defining Layer (PDL) 212 may be formed using a patterning process, which surrounds the anode 202, or alternatively, the anode 202 is formed in an opening of the pixel defining layer 212. Illustratively, the material of the pixel defining layer 212 may include a negative photoresist, polyimide, epoxy, or other organic insulating material.
The light emitting layer 203 is formed on the anode 202 exposed in the opening of the pixel defining layer 212. In the first embodiment, the light emitting layers 203 in the red sub-pixel, the green sub-pixel and the blue sub-pixel are respectively white light emitting layers for emitting white light. In addition, the light emitting functional layer may further include an auxiliary light emitting layer that contributes to light emission of the light emitting layer 203, for example, one or more film layers including a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an electron blocking layer (EIL), a Hole Blocking Layer (HBL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL). The light emitting layer 203 and the auxiliary light emitting layer are, for example, organic material layers.
A Cathode (Cathode) 204 is formed over the entire surface of the OLED display panel, for example, to cover the light-emitting layer 203 and the pixel defining layer 212, and the Cathode 204 is made of a metal oxide material such as Indium Zinc Oxide (IZO).
An encapsulation layer (TFE) 207 is located on the cathode 204, for example, the encapsulation layer 207 includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer. For example, the first inorganic encapsulation layer and the second inorganic encapsulation layer are formed by deposition or the like. The organic encapsulation layer is formed by means of ink-jet printing. For example, the first and second inorganic encapsulation layers may be formed of an inorganic material such as silicon nitride, silicon oxide, or silicon oxynitride, and the organic encapsulation layer may be formed of an organic material such as Polyimide (PI) or epoxy. Therefore, the first inorganic packaging layer, the organic packaging layer and the second inorganic packaging layer are formed into a composite packaging layer, and the composite packaging layer can form multiple protection on the functional structure of the OLED display panel and has better packaging effect.
The first color film layer is disposed on the encapsulation layer 207, and includes a red light filter layer 2081 disposed in the red subpixel, a green light filter layer 2082 disposed in the green subpixel, and a blue light filter layer 2083 disposed in the blue subpixel, for example, as shown in fig. 2, and further includes a protective layer (OC) 2084, where the protective layer 2084 is, for example, an organic material. For example, as shown in fig. 2, at the gap position between adjacent different color sub-pixels, the filter layers of adjacent different color sub-pixels overlap, so that a shading effect similar to that of a black matrix layer (BM) is formed at the gap position between adjacent different color sub-pixels, thereby avoiding light crosstalk between the different color sub-pixels and avoiding cross-color between the different color sub-pixels. In the OLED display panel provided in the first embodiment, the first color film layer or the Color Filter (CF) is integrated in the encapsulation layer, which is called a COE structure.
For example, the OLED display panel may further include a Lens (Lens) array including lenses, such as an inorganic material, disposed on the protective layer 2084 and an encapsulation adhesive layer covering the Lens array. The Lens array may enhance the front view brightness of the OLED display panel.
In a specific example, the preparation process of the OLED display panel shown in fig. 2 provided in the first embodiment includes:
first, a light shielding layer 209 and a buffer layer 210 are formed by deposition or the like sequentially over a substrate 201;
then, an active layer 2111 is formed on the buffer layer 210 by a patterning process, a gate insulating layer 2112 is formed on the active layer 2111 by deposition or the like, a gate electrode 2113 is formed on the gate insulating layer 2112 by a patterning process, a dielectric layer (ILD) 2114 is formed on the gate electrode 2113 by deposition or the like, a first via hole and a second via hole exposing the active layer 2111 are formed by an etching process, a source-drain metal layer 2115 is formed on the dielectric layer 2114, a source electrode formed on the source-drain metal layer 2115 is electrically connected with the active layer 2111 through the first via hole, and a drain electrode formed on the source-drain metal layer 2115 is electrically connected with the active layer 2111 through the second via hole, thereby completing the fabrication of the back plate;
then, a flat layer 206 is formed by deposition or the like;
Then, a Bragg reflector layer 205 is formed, and a third via hole is formed through a dry etching process;
then, an anode layer is formed by deposition or the like and patterned to form anodes 202 which are independent of each other and are positioned in each sub-pixel, wherein the anodes 202 are electrically connected with the drain electrode formed by the source-drain metal layer 2115 through a third via hole;
then, a light-emitting layer 203 of an organic material is formed on the anode 202 by means of inkjet printing or vapor deposition;
then, the cathode 204 is formed by vapor deposition or the like;
then, an encapsulation layer 207 including, for example, a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer is formed;
then, for example, a red light filter layer 2081 in a red sub-pixel, a green light filter layer 2082 in a green sub-pixel, and a blue light filter layer 2083 in a blue sub-pixel are sequentially formed, wherein the filter layers of adjacent different color sub-pixels overlap at a gap position between adjacent different color sub-pixels to form a light shielding effect similar to that of a black matrix layer (BM), and then a protective layer (OC) 2084 is formed.
After the bragg reflector layer 205 is formed by the whole surface coating, the via hole may be formed by a dry etching process using a process flow shown in fig. 5 or a process flow shown in fig. 6.
The process flow shown in fig. 5 is as follows: first, a Photoresist (PR) 501 is coated on a Bragg reflector layer 205 formed by whole surface coating, so as to obtain a structure shown as 5-a; then, the photoresist 501 is subjected to exposure and development to obtain a structure shown as 5-b; then, dry etching is performed on the exposed Bragg reflector layer 205 to obtain a structure shown as 5-c, wherein etching gas for dry etching can be CF4/O2; finally, the photoresist 501 is stripped to obtain the Bragg reflector layer 205 with the via hole, as shown in 5-d, wherein the slope angle of the via hole of the Bragg reflector layer 205 is in the range of 20-90 degrees.
The process flow shown in fig. 6 is as follows: first, a Hard Mask (Hard Mask) 601 of, for example, molybdenum (Mo) is deposited on the bragg mirror layer 205 formed by the entire surface plating and a patterned photoresist 602 is formed, resulting in a structure shown in 6-a; then, wet etching is performed on the hard mask 601 to obtain a structure shown as 6-b; then, dry etching is performed on the exposed Bragg reflector layer 205 to obtain a structure shown as 6-c, wherein etching gas for dry etching can be CF4/O2; finally, the photoresist 602 is stripped and the hard mask 601 is wet etched to obtain the Bragg reflector layer 205 with the via hole, as shown in 6-d, wherein the slope angle of the via hole of the Bragg reflector layer 205 is in the range of 20-90 degrees.
Example two
Unlike the first embodiment, as shown in fig. 7, the second embodiment provides a bottom-emitting OLED display panel, which includes a substrate 201, and a driving circuit layer and a light-emitting functional layer that are stacked on the substrate 201, wherein the light-emitting functional layer includes an anode 202, a light-emitting layer 203, and a cathode 204 that are stacked, and a bragg mirror layer 705 is disposed on a side of the cathode 204 away from the light-emitting layer 203.
Similarly to the second embodiment, the bragg mirror layer 705 includes a plurality of first dielectric layers and a plurality of second dielectric layers stacked one on top of the other, the first dielectric layers and the second dielectric layers being alternately stacked, the refractive index of the first dielectric layers being different from the refractive index of the second dielectric layers, and the sum of the number of layers of the first dielectric layers and the second dielectric layers being 10 or more.
In the OLED display panel shown in fig. 7 provided in the second embodiment, the bragg reflector layer 705 with high reflectivity disposed on the side of the cathode 204 far from the light emitting layer 203 can reflect the portion of the light emitted from the light emitting layer 203 and going out toward the cathode 204 as display light, so as to effectively improve the light emitting efficiency.
Similar to the examples are:
in one possible implementation, in embodiment two, the first The dielectric layer is made of niobium pentoxide Nb 2 O 5 Titanium dioxide TiO 2 Zinc sulfide ZnS or tantalum pentoxide Ta 2 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Silicon dioxide SiO 2 Aluminum fluoride AlF 3 Or aluminum oxide Al 2 O 3 。
In a possible implementation manner, in the second embodiment, the material of the first dielectric layer is zinc sulfide ZnS or titanium dioxide TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Or aluminum fluoride AlF 3 。
In a possible implementation manner, in the second embodiment, the thickness of the first dielectric layer and the second dielectric layer respectively ranges from 10nm to 500nm.
In one possible implementation, in embodiment two, the front projection of the bragg mirror layer 705 onto the substrate 201 covers the front projection of the light emitting functional layer onto the substrate 201.
In one possible implementation manner, in the second embodiment, the sum of the layers of the first dielectric layer and the second dielectric layer is greater than or equal to 20.
Unlike the first embodiment, as shown in fig. 7, the OLED display panel provided in the second embodiment is a passivation layer 701 on the side of the anode 202 away from the bragg reflector layer 705, a flat layer 206 on the side of the passivation layer 701 away from the anode 202, and a second color film layer on the side of the flat layer 206 away from the anode 202. For example, the OLED display panel shown in fig. 7 includes red sub-pixels, green sub-pixels and blue sub-pixels arranged in an array, the light emitting layer 203 emits white light, and the second color film layer includes a red light filter layer 7081 located in the red sub-pixels, a green light filter layer 7082 located in the green sub-pixels and a blue light filter layer 7083 located in the blue sub-pixels, so as to implement full-color display of the OLED display panel. For example, as shown in fig. 7, the filter layers of adjacent different color sub-pixels overlap at the gap positions between the adjacent different color sub-pixels, thereby forming a light shielding effect similar to that of the black matrix layer (BM) at the gap positions between the adjacent different color sub-pixels. In addition, as shown in fig. 7, an encapsulation layer 207 may be disposed on a side of the bragg reflector layer 705 away from the cathode 204, and an opaque cover plate 703 may be disposed on a side of the encapsulation layer 207 away from the bragg reflector layer 705.
Example III
Similar to the embodiment, as shown in fig. 8, the third embodiment provides a top-emitting OLED display panel, which includes a substrate 201, and a driving circuit layer and a light-emitting functional layer that are stacked on the substrate 201, where the light-emitting functional layer includes an anode 202, a light-emitting layer, and a cathode 204 that are stacked, and a bragg mirror layer 205 is disposed on a side of the anode 202 away from the light-emitting layer.
The bragg reflector layer 205 includes a plurality of first dielectric layers and a plurality of second dielectric layers stacked in layers, the first dielectric layers and the second dielectric layers being alternately stacked, the refractive index of the first dielectric layers being different from the refractive index of the second dielectric layers, and the sum of the number of layers of the first dielectric layers and the second dielectric layers being 10 or more.
Unlike the first embodiment, in the third embodiment, the light emitting layers include a red light emitting layer 2031 for emitting red light in the red sub-pixel, a green light emitting layer 2032 for emitting green light in the green sub-pixel, and a blue light emitting layer 2033 for emitting blue light in the blue sub-pixel.
In the OLED display panel shown in fig. 8 provided in the third embodiment, the bragg reflector layer 205 with high reflectivity disposed on the side of the anode 202 far from the light emitting layer can reflect the light emitted from the red light emitting layer 2031, the green light emitting layer 2032 and the blue light emitting layer 2033 in the direction of the anode 202 as display light, so as to effectively improve the light emitting efficiency.
Similar to the examples are:
in one possible implementation manner, in the third embodiment, the material of the first dielectric layer is niobium pentoxide Nb 2 O 5 Titanium dioxide TiO 2 Zinc sulfide ZnS or tantalum pentoxide Ta 2 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Silicon dioxide SiO 2 Aluminum fluoride AlF 3 Or aluminum oxide Al 2 O 3 。
In one possible implementation, in embodiment three, the firstThe material of a dielectric layer is zinc sulfide ZnS or titanium dioxide TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Or aluminum fluoride AlF 3 。
In a possible implementation manner, in the third embodiment, the thickness of the first dielectric layer and the second dielectric layer respectively ranges from 10nm to 500nm.
In one possible implementation, in embodiment three, the front projection of the bragg mirror layer 205 on the substrate 201 covers the front projection of the light emitting functional layer on the substrate 201.
In one possible implementation manner, in the third embodiment, the sum of the layers of the first dielectric layer and the second dielectric layer is greater than or equal to 20.
Unlike the first embodiment, in the third embodiment, since the light emitting layer includes the red light emitting layer 2031 for emitting red light in the red sub-pixel, the green light emitting layer 2032 for emitting green light in the green sub-pixel, and the blue light emitting layer 2033 for emitting blue light in the blue sub-pixel, the first color film layer may not be provided. However, the first color film layer may also be disposed to reduce reflection of ambient light and improve light efficiency of the OLED display panel. For example, the light emitting layer in the red subpixel is the red light emitting layer 2031 and the filter layer in the red subpixel is the red light filter layer 2081, the light emitting layer in the green subpixel is the green light emitting layer 2032 and the filter layer in the green subpixel is the green light filter layer 2082, the light emitting layer in the blue subpixel is the blue light emitting layer 2033 and the filter layer in the blue subpixel is the blue light filter layer 2083.
Example IV
Similarly to the embodiment, as shown in fig. 9, the fourth embodiment provides a bottom-emitting OLED display panel, which includes a substrate 201, and a driving circuit layer and a light-emitting functional layer that are stacked on the substrate 201, wherein the light-emitting functional layer includes an anode 202, a light-emitting layer, and a cathode 204 that are stacked, and a bragg mirror layer 705 is disposed on a side of the cathode 204 away from the light-emitting layer.
The bragg reflector layer 705 includes a plurality of first dielectric layers and a plurality of second dielectric layers that are stacked, the first dielectric layers and the second dielectric layers being alternately stacked, the refractive index of the first dielectric layers being different from the refractive index of the second dielectric layers, and the sum of the number of layers of the first dielectric layers and the second dielectric layers being equal to or greater than 10.
Unlike the second embodiment, in the fourth embodiment, the light emitting layer includes a red light emitting layer 2031 for emitting red light in the red sub-pixel, a green light emitting layer 2032 for emitting green light in the green sub-pixel, and a blue light emitting layer 2033 for emitting blue light in the blue sub-pixel.
In the OLED display panel shown in fig. 9 according to the fourth embodiment, the bragg reflector layer 705 with high reflectivity disposed on the side of the cathode 204 far from the light emitting layer can reflect the light emitted from the red light emitting layer 2031, the green light emitting layer 2032 and the blue light emitting layer 2033 in the direction of the cathode 204 as display light, so as to effectively improve the light emitting efficiency.
Similar to the examples:
in a possible implementation manner, in the fourth embodiment, the material of the first dielectric layer is niobium pentoxide Nb 2 O 5 Titanium dioxide TiO 2 Zinc sulfide ZnS or tantalum pentoxide Ta 2 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Silicon dioxide SiO 2 Aluminum fluoride AlF 3 Or aluminum oxide Al 2 O 3 。
In a possible implementation manner, in the fourth embodiment, the material of the first dielectric layer is zinc sulfide ZnS or titanium dioxide TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Or aluminum fluoride AlF 3 。
In a possible implementation manner, in the fourth embodiment, the thickness of the first dielectric layer and the second dielectric layer respectively ranges from 10nm to 500nm.
In one possible implementation, in embodiment four, the front projection of the bragg mirror layer 705 onto the substrate 201 covers the front projection of the light emitting functional layer onto the substrate 201.
In one possible implementation manner, in the fourth embodiment, the sum of the layers of the first dielectric layer and the second dielectric layer is greater than or equal to 20.
Unlike the second embodiment, in the fourth embodiment, since the light emitting layer includes the red light emitting layer 2031 for emitting red light in the red sub-pixel, the green light emitting layer 2032 for emitting green light in the green sub-pixel, and the blue light emitting layer 2033 for emitting blue light in the blue sub-pixel, the second color film layer may not be provided. However, the second color film layer may also be disposed to reduce reflection of ambient light and improve light efficiency of the OLED display panel.
Example five
Similar to the third embodiment, as shown in fig. 10, the fifth embodiment provides a top-emitting OLED display panel, which includes a substrate 201, and a driving circuit layer and a light-emitting functional layer that are stacked on the substrate 201, wherein the light-emitting functional layer includes an anode 202, a light-emitting layer, and a cathode 204 that are stacked, and a bragg mirror layer is disposed on a side of the anode 202 far from the light-emitting layer. The light emitting layers include a red light emitting layer 2031 for emitting red light in the red subpixel, a green light emitting layer 2032 for emitting green light in the green subpixel, and a blue light emitting layer 2033 for emitting blue light in the blue subpixel. The Bragg reflector layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers which are arranged in a laminated mode, the first dielectric layers and the second dielectric layers are alternately laminated, the refractive index of the first dielectric layers is different from that of the second dielectric layers, and the sum of the layers of the first dielectric layers and the second dielectric layers is more than or equal to 10.
Unlike the third embodiment, in the fifth embodiment, the bragg mirror layer includes a first sub-bragg mirror layer 2051 located in the red sub-pixel, a second sub-bragg mirror layer 2052 located in the green sub-pixel, and a third sub-bragg mirror layer 2053 located in the blue sub-pixel, the first sub-bragg mirror layer 2051, the second sub-bragg mirror layer 2052, and the third sub-bragg mirror layer 2053 include a plurality of first dielectric layers and a plurality of second dielectric layers which are stacked, the first dielectric layers and the second dielectric layers are alternately stacked, the refractive index of the first dielectric layers is different from the refractive index of the second dielectric layers, and the sum of the number of layers of the first dielectric layers and the second dielectric layers is 10 or more.
It should be noted that, the first bragg reflector layer 2051 only needs to reflect the portion of the light emitted from the red light emitting layer 2031 in the red sub-pixel in the direction of the anode 202 to display light, the second bragg reflector layer 2052 only needs to reflect the portion of the light emitted from the green light emitting layer 2032 in the green sub-pixel in the direction of the anode 202 to display light, and the third bragg reflector layer 2053 only needs to reflect the portion of the light emitted from the blue light emitting layer 2033 in the blue sub-pixel in the direction of the anode 202 to display light, so that the sum of the layers of the first dielectric layer and the second dielectric layer in the first bragg reflector layer 2051, the sum of the layers of the first dielectric layer and the second dielectric layer in the second bragg reflector layer 2052, the sum of the layers of the first dielectric layer and the second dielectric layer in the third bragg reflector layer 2053 may be different, and the sum of the layers of the first dielectric layer and the second dielectric layer 2052 in the first sub-bragg reflector layer 2051 may be different.
In the OLED display panel shown in fig. 10 provided in the fifth embodiment, the portion of the light emitted from the red light emitting layer 2031, the green light emitting layer 2032 and the blue light emitting layer 2033, which is emitted in the direction of the anode 202, can be reflected to display light by the first sub-bragg mirror layer 2051 having high reflectivity for red light, the second sub-bragg mirror layer 2052 having high reflectivity for green light and the third sub-bragg mirror layer 2053 having high reflectivity for blue light, so that the light emitting efficiency is effectively improved.
In a specific example, the bragg mirror layers including the first sub-bragg mirror layer 2051, the second sub-bragg mirror layer 2052, and the third sub-bragg mirror layer 2053 are prepared in a manner such as:
first, a first sub-bragg reflector material layer is formed by coating a whole surface of the flat layer 206, and then patterning the first sub-bragg reflector material layer 2051 located in a red sub-pixel is formed by a dry etching process, for example, the orthographic projection of the first sub-bragg reflector layer 2051 on the substrate 201 coincides with the orthographic projection of the red light emitting layer 2031 on the substrate 201;
then, forming a second sub-Bragg reflector material layer through whole surface coating, and patterning the second sub-Bragg reflector material layer through a dry etching process to form a second sub-Bragg reflector layer 2052 positioned in the green sub-pixel;
Finally, the entire surface is coated to form a third sub-bragg reflector material layer, which is then patterned by a dry etching process to form a third sub-bragg reflector layer 2053 within the blue subpixel.
In one possible implementation, in the fifth embodiment, the sum of the layers of the first dielectric layer and the second dielectric layer in the first sub-bragg mirror layer 2051, the second sub-bragg mirror layer 2052, and the third sub-bragg mirror layer 2053 is equal to or greater than 10 and less than 20, respectively.
Since the first sub-bragg reflector layer 2051 only needs to reflect the portion of the red light emitting layer 2031 emitted in the red sub-pixel that emits light in the direction of the anode 202 as display light, the second sub-bragg reflector layer 2052 only needs to reflect the portion of the green light emitting layer 2032 emitted in the green sub-pixel that emits light in the direction of the anode 202, and the third sub-bragg reflector layer 2053 only needs to reflect the portion of the blue light emitting layer 2033 emitted in the blue sub-pixel that emits light in the direction of the anode 202 as display light, the sum of the first dielectric layer 2051, the second dielectric layer 2052, and the second dielectric layer in the first sub-bragg reflector layer 2052 and the third sub-bragg reflector layer 2053 is respectively set to be 20 or less, which can satisfy the reflectance requirements for the respective narrow-band visible light, thereby reducing the thickness of the bragg reflector layers and facilitating the reduction of the overall thickness of the OLED display panel.
Similar to example three is:
in one possible implementation manner, in the fifth embodiment, the material of the first dielectric layer is niobium pentoxide Nb 2 O 5 Titanium dioxide TiO 2 Zinc sulfide ZnS or tantalum pentoxide Ta 2 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Oxidation and dioxideSilicon SiO 2 Aluminum fluoride AlF 3 Or aluminum oxide Al 2 O 3 。
In a possible implementation manner, in the third embodiment, the material of the first dielectric layer is zinc sulfide ZnS or titanium dioxide TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Or aluminum fluoride AlF 3 。
In a possible implementation manner, in the third embodiment, the thickness of the first dielectric layer and the second dielectric layer respectively ranges from 10nm to 500nm.
In the fifth embodiment, the first color film layer may be disposed to reduce reflection of ambient light and improve light efficiency of the OLED display panel.
Example six
Similarly to the fourth embodiment, as shown in fig. 11, the sixth embodiment provides a bottom-emitting OLED display panel, which includes a substrate 201, and a driving circuit layer and a light-emitting functional layer stacked on the substrate 201, wherein the light-emitting functional layer includes an anode 202, a light-emitting layer, and a cathode 204 stacked, and a bragg mirror layer is disposed on a side of the cathode 204 away from the light-emitting layer. The light emitting layers include a red light emitting layer 2031 for emitting red light in the red subpixel, a green light emitting layer 2032 for emitting green light in the green subpixel, and a blue light emitting layer 2033 for emitting blue light in the blue subpixel. The Bragg reflector layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers which are arranged in a laminated mode, the first dielectric layers and the second dielectric layers are alternately laminated, the refractive index of the first dielectric layers is different from that of the second dielectric layers, and the sum of the layers of the first dielectric layers and the second dielectric layers is more than or equal to 10.
Unlike the fourth embodiment, in the sixth embodiment, the bragg mirror layer includes a first sub-bragg mirror layer 7051 in the red sub-pixel, a second sub-bragg mirror layer 7052 in the green sub-pixel, and a third sub-bragg mirror layer 7053 in the blue sub-pixel, the first sub-bragg mirror layer 7051, the second sub-bragg mirror layer 7052, and the third sub-bragg mirror layer 7053 include a plurality of first dielectric layers and a plurality of second dielectric layers that are stacked, the first dielectric layers and the second dielectric layers are alternately stacked, the refractive index of the first dielectric layers is different from that of the second dielectric layers, and the sum of the number of layers of the first dielectric layers and the second dielectric layers is 10 or more.
In the OLED display panel shown in fig. 11 provided in the sixth embodiment, the portion of the light emitted from the red light emitting layer 2031, the green light emitting layer 2032 and the blue light emitting layer 2033, which is emitted in the direction of the cathode 204, is reflected as display light by the first sub-bragg reflector layer 7051 having high reflectivity for red light, the second sub-bragg reflector layer 7052 having high reflectivity for green light and the third sub-bragg reflector layer 7053 having high reflectivity for blue light, so that the light emitting efficiency is effectively improved.
In one possible implementation manner, in the sixth embodiment, the sum of the layers of the first dielectric layer and the second dielectric layer in the first sub-bragg mirror layer 7051, the second sub-bragg mirror layer 7052, and the third sub-bragg mirror layer 7053 is greater than or equal to 10 and less than 20, respectively.
Since the first bragg reflector layer 7051 only needs to reflect the portion of the red light emitting layer 2031 in the red sub-pixel that emits light in the direction of the cathode 204 as display light, the second bragg reflector layer 7052 only needs to reflect the portion of the green light emitting layer 2032 in the green sub-pixel that emits light in the direction of the cathode 204 as display light, and the third bragg reflector layer 7053 only needs to reflect the portion of the blue light emitting layer 2033 in the blue sub-pixel that emits light in the direction of the cathode 204 as display light, the sum of the number of layers of the first medium layer 7051, the second medium layer 7052 and the third medium layer 7053 in the first sub-bragg reflector layer 7052 and the second medium layer is respectively set to be 20 or less, so that the requirements for the reflectivity of visible light in respective narrow wavelength bands can be satisfied, and the thickness of the bragg reflector layers can be reduced, which is favorable for reducing the thickness of the whole OLED display panel.
Similar to example four is:
in a possible implementation manner, in the sixth embodiment, the material of the first dielectric layer is niobium pentoxide Nb 2 O 5 Titanium dioxide TiO 2 Zinc sulfide ZnS or tantalum pentoxide Ta 2 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Silicon dioxide SiO 2 Aluminum fluoride AlF 3 Or aluminum oxide Al 2 O 3 。
In a possible implementation manner, in the sixth embodiment, the material of the first dielectric layer is zinc sulfide ZnS or titanium dioxide TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second dielectric layer is magnesium fluoride MgF 2 Or aluminum fluoride AlF 3 。
In a possible implementation manner, in the sixth embodiment, the thickness of the first dielectric layer and the second dielectric layer respectively ranges from 10nm to 500nm.
In the sixth embodiment, a second color film layer may be disposed to reduce reflection of ambient light and improve light efficiency of the OLED display panel.
Another embodiment of the present disclosure provides a display device including the display panel provided in the above embodiment. The display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc., which is not limited in this embodiment.
It should be apparent that the foregoing examples of the present disclosure are merely illustrative of the present disclosure and not limiting of the embodiments of the present disclosure, and that various other changes and modifications may be made by one of ordinary skill in the art based on the foregoing description, and it is not intended to be exhaustive of all embodiments, and all obvious changes and modifications that come within the scope of the present disclosure are intended to be embraced by the technical solution of the present disclosure.
Claims (12)
1. The utility model provides a display panel, its characterized in that includes the substrate and in drive circuit layer and the luminous functional layer of range upon range of setting on the substrate, luminous functional layer is including range upon range of positive pole, luminescent layer and the negative pole that sets up, positive pole keep away from luminescent layer one side or negative pole keep away from luminescent layer one side is provided with the Bragg reflector layer, bragg reflector layer is including a plurality of first dielectric layers and a plurality of second dielectric layers of range upon range of setting, first dielectric layer with the second dielectric layer stacks in turn, the refracting index of first dielectric layer is different with the refracting index of second dielectric layer, the sum of the number of layers of first dielectric layer with the second dielectric layer is greater than or equal to 10.
2. The display panel of claim 1, wherein the material of the first dielectric layer is niobium pentoxide, titanium dioxide, zinc sulfide, or tantalum pentoxide; the second dielectric layer is made of magnesium fluoride, silicon dioxide, aluminum fluoride or aluminum oxide.
3. The display panel of claim 2, wherein the material of the first dielectric layer is zinc sulfide or titanium dioxide; the second dielectric layer is made of magnesium fluoride or aluminum fluoride.
4. The display panel of claim 1, wherein the thickness of the first dielectric layer and the second dielectric layer are each in a range of 10nm to 500nm.
5. The display panel of claim 1, wherein an orthographic projection of the bragg mirror layer onto the substrate covers an orthographic projection of the light emitting functional layer onto the substrate.
6. The display panel of claim 5, wherein a sum of layers of the first dielectric layer and the second dielectric layer is 20 or more.
7. The display panel of claim 1, wherein the display panel comprises first, second, and third sub-pixels arranged in an array, the bragg mirror layer comprising a first sub-bragg mirror layer in the first sub-pixel, a second sub-bragg mirror layer in the second sub-pixel, and a third sub-bragg mirror layer in the third sub-pixel.
8. The display panel of claim 7, wherein a sum of layers of the first dielectric layer and the second dielectric layer in the first sub-bragg reflector layer, the second sub-bragg reflector layer, and the third sub-bragg reflector layer is 10 or more and 20 or less, respectively.
9. The display panel according to claim 1, further comprising a flat layer between the driving circuit layer and the light emitting function layer, the bragg mirror layer being disposed between the flat layer and the anode.
10. The display panel of claim 1, wherein the bragg reflector layer is disposed on a side of the anode remote from the light emitting layer, the display panel further comprising an encapsulation layer on a side of the cathode remote from the light emitting layer and a first color film layer on a side of the encapsulation layer remote from the cathode.
11. The display panel of claim 1, wherein the bragg mirror layer is disposed on a side of the cathode remote from the light emitting layer, the display panel further comprising a passivation layer on a side of the anode remote from the bragg mirror layer, a planarization layer on a side of the passivation layer remote from the anode, and a second color film layer on a side of the planarization layer remote from the anode.
12. A display device comprising the display panel according to any one of claims 1-11.
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| CN202410009623.9A CN117835754A (en) | 2024-01-02 | 2024-01-02 | Display panel and display device |
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| CN202410009623.9A CN117835754A (en) | 2024-01-02 | 2024-01-02 | Display panel and display device |
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