CN117832036B - Hot-melt aluminum electrode layer electrostatic chuck and manufacturing process thereof - Google Patents
Hot-melt aluminum electrode layer electrostatic chuck and manufacturing process thereof Download PDFInfo
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- CN117832036B CN117832036B CN202410248230.3A CN202410248230A CN117832036B CN 117832036 B CN117832036 B CN 117832036B CN 202410248230 A CN202410248230 A CN 202410248230A CN 117832036 B CN117832036 B CN 117832036B
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- electrode
- aluminum
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- layer
- melt
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 68
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000012943 hotmelt Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 28
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 18
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 11
- 238000000227 grinding Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims abstract description 3
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 60
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000012528 membrane Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a hot-melt aluminum electrode layer electrostatic chuck and a manufacturing process, wherein the manufacturing process comprises the following steps of processing a plurality of electrode pattern grooves on the top of an aluminum oxide ceramic base; an electrode bolt hole is formed in each electrode pattern groove; copper electrode bolts are inserted into the upper ends of the electrode bolt holes; a plurality of high-purity aluminum particles are paved in a plurality of electrode pattern grooves of an alumina ceramic base, and are placed in a high vacuum furnace for heating, molten aluminum flows into the electrode pattern grooves uniformly, and the aluminum flows in the electrode pattern grooves for cooling to form a hot-melt aluminum electrode layer; grinding the top of the hot melt aluminum electrode layer by using a grinder; anodic oxidation is carried out on the hot-melt aluminum electrode layer to form a compact oxide layer; aluminum oxide is thermally fused on top of the aluminum oxide ceramic base to form an aluminum oxide dielectric layer. The invention has the advantages of low cost, convenient processing, simple method for manufacturing the hot-melt aluminum electrode layer, no need of expensive equipment and convenient thickness control.
Description
Technical Field
The invention relates to an electrostatic chuck device, in particular to a hot-melt aluminum electrode layer electrostatic chuck and a manufacturing process thereof.
Background
Electrostatic chucks are now widely used in semiconductor processing in plasma and vacuum environments, such as etching, chemical vapor deposition, ion implantation, and the like.
The electrostatic chuck comprises three parts: the dielectric adsorption layer, the electrode layer and the basal layer are laminated in the electrostatic chuck in a layered structure, and the dielectric adsorption layer, the electrode layer and the basal layer are sequentially arranged from the surface layer to the base.
Currently, the fabrication of electrode layers of conventional ceramic electrostatic chucks includes:
1. Screen-printed metal paste sintering, publication number "JPS62286247a" discloses an electrostatic chuck in which a film-like electrode is formed on the upper surface of a ceramic substrate, and the film-like electrode is covered with an insulating dielectric layer. The membrane electrode is formed on the surface of the substrate by screen printing or etching. However, it is disadvantageous that the thickness of the membrane electrode is thin by only 1 to 3 μm, which results in insufficient strength of the membrane electrode, and moreover, a paste screen printing apparatus needs to be purchased.
The patent application with the publication number of CN116525525A discloses a silicon carbide electrostatic chuck and a manufacturing method, wherein the silicon carbide electrostatic chuck comprises a silicon carbide dielectric layer, a PVD electrode layer and a silicon carbide base, the PVD electrode layer is arranged between the silicon carbide dielectric layer and the silicon carbide base, an extraction electrode is embedded in the silicon carbide base and is electrically connected with the PVD electrode layer, and a plurality of bosses are arranged on the top of the silicon carbide dielectric layer. However, PVD and CVD equipment is too complex, equipment costs are high, and the cost of operators is also high.
Disclosure of Invention
The invention aims to provide a hot-melt aluminum electrode layer electrostatic chuck and a manufacturing process thereof, which have the advantages of low cost, convenient processing, simple method for manufacturing the hot-melt aluminum electrode layer, no need of expensive equipment and convenient thickness control.
The technical aim of the invention is realized by the following technical scheme:
A process for manufacturing a hot-melt aluminum electrode layer electrostatic chuck comprises the following steps,
Step one: processing a plurality of electrode pattern grooves on the top of the alumina ceramic base, wherein the depth of each electrode pattern groove is 1mm;
Step two: an electrode bolt hole is formed in each electrode pattern groove, and the vertical section of each electrode bolt hole is I-shaped;
step three: precisely cleaning an alumina ceramic base;
Step four: copper electrode bolts are inserted into the upper ends of the electrode bolt holes, and the vertical section of each copper electrode bolt is T-shaped;
step five: a plurality of high-purity aluminum particles are paved in a plurality of electrode pattern grooves of an alumina ceramic base, and are placed in a high vacuum furnace for heating to reach the melting point of aluminum, so that the high-purity aluminum particles can be melted into aluminum liquid which uniformly flows into the electrode pattern grooves, the aluminum liquid is cooled in the electrode pattern grooves and is adhered to the electrode pattern grooves to form electrode patterns, and a hot-melt aluminum electrode layer is formed;
Step six: grinding the top of the hot-melt aluminum electrode layer by using a grinder until the thickness of the hot-melt aluminum electrode layer is 0.1mm-0.2mm;
Step seven: anodic oxidation is carried out on the hot-melt aluminum electrode layer to form a compact oxide layer;
step eight: thermally spraying aluminum oxide on the top of the aluminum oxide ceramic base to form an aluminum oxide dielectric layer, wherein the thickness of the aluminum oxide dielectric layer is 0.8mm-1mm;
step nine: grinding, polishing and bump manufacturing are carried out on the alumina dielectric layer on the top of the alumina ceramic base;
Step ten: the lower end of each electrode bolt hole is inserted with an electrified electrode, and the lower end of each copper electrode bolt is inserted with the upper end of the corresponding electrified electrode.
The invention also provides a hot-melt aluminum electrode layer electrostatic chuck which comprises an aluminum oxide ceramic base, a hot-melt aluminum electrode layer embedded at the top of the aluminum oxide ceramic base, an aluminum oxide dielectric layer combined at the tops of the aluminum oxide ceramic base and the hot-melt aluminum electrode layer, and a salient point positioned at the top of the aluminum oxide dielectric layer.
The preferred scheme is as follows: the hot melt aluminum electrode layer is a metal layer with a plurality of electrode patterns;
The upper end of the inside of the alumina ceramic base is embedded with a plurality of copper electrode pins, the copper electrode pins respectively correspond to the positions of the metal layers of the electrode patterns, and each copper electrode pin is electrically connected with the corresponding metal layer of the electrode pattern;
The lower end of the inner part of the alumina ceramic base is embedded with a plurality of electrifying electrodes, the electrifying electrodes respectively correspond to the positions of the copper electrode pins, and each electrifying electrode is electrically connected with the corresponding copper electrode pin.
In summary, according to the method for welding the hot-melt aluminum, the high-purity aluminum particles are heated and pressurized in the high-vacuum furnace, the high-purity aluminum particles are melted into the aluminum liquid which uniformly flows into the electrode pattern grooves, the aluminum liquid is pressed with the aluminum oxide ceramic base under the high-pressure condition, the aluminum liquid is embedded into the scratches of the electrode pattern grooves of the aluminum oxide ceramic base, the aluminum liquid and the high-vacuum furnace are cooled under the high-pressure condition, and then the aluminum liquid is cooled to form the hot-melt aluminum electrode layer.
Drawings
FIG. 1 is a schematic diagram of the overall structure of an embodiment;
FIG. 2 is a vertical cross-sectional view of an embodiment;
FIG. 3 is an exploded view of an embodiment;
FIG. 4 is an enlarged view of A in FIG. 2;
Fig. 5 is a schematic diagram of the high purity aluminum particles of the examples prior to hot melting.
In the figure, 1, an alumina ceramic base; 2. an electrode pattern groove; 3. an electrode pin hole; 4. copper electrode pins; 5. high-purity aluminum particles; 6. a hot melt aluminum electrode layer; 7. an alumina dielectric layer; 8. a bump; 9. and electrifying the electrode.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Wherein like parts are designated by like reference numerals.
The electrostatic chuck for the hot-melt aluminum electrode layer comprises an aluminum oxide ceramic base 1, a hot-melt aluminum electrode layer 6 embedded on the top of the aluminum oxide ceramic base 1, an aluminum oxide dielectric layer 7 combined on the top of the aluminum oxide ceramic base 1 and the hot-melt aluminum electrode layer 6, and a salient point 8 positioned on the top of the aluminum oxide dielectric layer 7, as shown in fig. 1-5.
The hot-melt aluminum electrode layer 6 is a metal layer with a plurality of electrode patterns, and the metal layer with the electrode patterns can be monopolar, bipolar and multipolar according to requirements.
Two copper electrode pins 4 are embedded in the upper end of the inside of the alumina ceramic base 1, the two copper electrode pins 4 correspond to the positions of the metal layers of the two electrode patterns respectively, and each copper electrode pin 4 is electrically connected with the metal layer of the corresponding electrode pattern;
two electrifying electrodes 9 are embedded at the lower end of the inner part of the alumina ceramic base 1, the two electrifying electrodes 9 correspond to the positions of the two copper electrode bolts 4 respectively, and each electrifying electrode 9 is electrically connected with the corresponding copper electrode bolt 4.
The specific implementation process comprises the following steps:
step one: two electrode pattern grooves 2 are processed on the top of the alumina ceramic base 1, and the depth of each electrode pattern groove 2 is 1mm;
Step two: an electrode bolt hole 3 is formed in each electrode pattern groove 2, and the vertical section of each electrode bolt hole 3 is I-shaped;
Step three: precisely cleaning the alumina ceramic base 1;
step four: the upper end of each electrode pin hole 3 is inserted with a copper electrode pin 4, the vertical section of each copper electrode pin 4 is in a T shape, the upper end of each copper electrode pin 4 is flush with the inner bottom wall of the corresponding electrode pattern groove 2, and the lower end of each copper electrode pin 4 is positioned at the lower end of the corresponding electrode pin hole 3;
Step five: a plurality of high-purity aluminum particles 5 are paved in a plurality of electrode pattern grooves 2 of the aluminum oxide ceramic base 1, and are placed in a high vacuum furnace for heating to reach the melting point of aluminum, so that the high-purity aluminum particles 5 can be melted into aluminum liquid which uniformly flows into the electrode pattern grooves 2, the aluminum liquid is cooled in the electrode pattern grooves 2 and is adhered to the inner parts of the electrode pattern grooves 2 to form electrode patterns, and a hot-melt aluminum electrode layer 6 is formed;
step six: grinding the top of the hot-melt aluminum electrode layer 6 by using a grinder until the thickness of the hot-melt aluminum electrode layer 6 is 0.1mm-0.2mm;
Step seven: the hot melt aluminum electrode layer 6 is anodized to form a compact oxide layer, and the oxide layer can have the effects of increasing hardness and insulating;
Step eight: thermally firing aluminum oxide on top of the aluminum oxide ceramic base 1 to form an aluminum oxide dielectric layer 7, the thickness of the aluminum oxide dielectric layer 7 being 0.8mm-1mm;
step nine: grinding, polishing and manufacturing a convex point 8 on an alumina dielectric layer 7 on the top of the alumina ceramic base 1;
Step ten: the lower end of each electrode pin hole 3 is inserted with a power-on electrode 9, and the lower end of each copper electrode pin 4 is inserted with the upper end of the corresponding power-on electrode 9.
Wherein, the aluminum oxide dielectric layer 7 is processed by adopting a hot-melt jetting method, the plurality of protruding points 8 are processed by adopting a shielding sand blasting method, and the hot-melt jetting, the shielding sand blasting, the grinding and the polishing of the aluminum oxide dielectric layer 7 are all of the prior art, and are not repeated herein.
The present embodiment is only for explanation of the present invention and is not to be construed as limiting the present invention, and modifications to the present embodiment, which may not creatively contribute to the present invention as required by those skilled in the art after reading the present specification, are all protected by patent laws within the scope of claims of the present invention.
Claims (3)
1. A process for manufacturing a hot-melt aluminum electrode layer electrostatic chuck is characterized by comprising the following steps,
Step one: processing a plurality of electrode pattern grooves (2) on the top of an alumina ceramic base (1), wherein the depth of each electrode pattern groove (2) is 1mm;
step two: an electrode bolt hole (3) is formed in each electrode pattern groove (2), and the vertical section of each electrode bolt hole (3) is in an I shape;
Step three: precisely cleaning the alumina ceramic base (1);
Step four: copper electrode pins (4) are inserted into the upper ends of the electrode pin holes (3), and the vertical section of each copper electrode pin (4) is T-shaped;
Step five: a plurality of high-purity aluminum particles (5) are horizontally paved in a plurality of electrode pattern grooves (2) of an aluminum oxide ceramic base (1), and are placed in a high vacuum furnace for heating to reach the melting point of aluminum, so that the high-purity aluminum particles can be melted into aluminum liquid which uniformly flows into the electrode pattern grooves (2), the aluminum liquid is cooled in the electrode pattern grooves (2) and is adhered to the inner parts of the electrode pattern grooves (2) to form electrode patterns, and a hot-melt aluminum electrode layer (6) is formed;
Step six: grinding the top of the hot-melt aluminum electrode layer (6) by using a grinder until the thickness of the hot-melt aluminum electrode layer (6) is 0.1mm-0.2mm;
step seven: anodic oxidation is carried out on the hot-melt aluminum electrode layer (6) to form a compact oxide layer;
step eight: forming an alumina dielectric layer (7) by thermally spraying alumina on the top of the alumina ceramic base (1), wherein the thickness of the alumina dielectric layer (7) is 0.8mm-1mm;
Step nine: grinding, polishing and manufacturing salient points (8) on an alumina dielectric layer on the top of the alumina ceramic base (1);
Step ten: the lower end of each electrode bolt hole (3) is inserted with an energizing electrode (9), and the lower end of each copper electrode bolt (4) is inserted with the upper end of the corresponding energizing electrode (9).
2. The electrostatic chuck for the hot-melt aluminum electrode layer is manufactured by the manufacturing process of the electrostatic chuck for the hot-melt aluminum electrode layer according to claim 1 and is characterized by comprising an aluminum oxide ceramic base (1), a hot-melt aluminum electrode layer (6) embedded at the top of the aluminum oxide ceramic base (1), an aluminum oxide dielectric layer (7) combined at the tops of the aluminum oxide ceramic base (1) and the hot-melt aluminum electrode layer (6), and a salient point (8) positioned at the top of the aluminum oxide dielectric layer (7).
3. An electrostatic chuck of a hot-melt aluminum electrode layer according to claim 2, characterized in that the hot-melt aluminum electrode layer (6) is a metal layer of several electrode patterns;
A plurality of copper electrode pins (4) are embedded at the upper end inside the alumina ceramic base (1), the copper electrode pins (4) respectively correspond to the positions of the metal layers of the electrode patterns, and each copper electrode pin (4) is electrically connected with the corresponding metal layer of the electrode pattern;
The aluminum oxide ceramic base (1) is internally provided with a plurality of electrifying electrodes (9) in an embedded mode, the electrifying electrodes (9) are respectively corresponding to the copper electrode pins (4), and each electrifying electrode (9) is electrically connected with the corresponding copper electrode pin (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410248230.3A CN117832036B (en) | 2024-03-05 | 2024-03-05 | Hot-melt aluminum electrode layer electrostatic chuck and manufacturing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410248230.3A CN117832036B (en) | 2024-03-05 | 2024-03-05 | Hot-melt aluminum electrode layer electrostatic chuck and manufacturing process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117832036A CN117832036A (en) | 2024-04-05 |
| CN117832036B true CN117832036B (en) | 2024-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410248230.3A Active CN117832036B (en) | 2024-03-05 | 2024-03-05 | Hot-melt aluminum electrode layer electrostatic chuck and manufacturing process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117832036B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114521289A (en) * | 2019-09-09 | 2022-05-20 | 沃特洛电气制造公司 | Electrostatic chuck and method of manufacturing the same |
| CN116525525A (en) * | 2023-06-30 | 2023-08-01 | 无锡卓瓷科技有限公司 | Silicon carbide electrostatic chuck and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0727961B2 (en) * | 1986-06-05 | 1995-03-29 | 東陶機器株式会社 | Method of manufacturing electrostatic chuck plate |
| JP2007173596A (en) * | 2005-12-22 | 2007-07-05 | Ngk Insulators Ltd | Electrostatic chuck |
| JP2007311737A (en) * | 2006-04-21 | 2007-11-29 | Hitachi Chem Co Ltd | Electrostatic chuck |
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2024
- 2024-03-05 CN CN202410248230.3A patent/CN117832036B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114521289A (en) * | 2019-09-09 | 2022-05-20 | 沃特洛电气制造公司 | Electrostatic chuck and method of manufacturing the same |
| CN116525525A (en) * | 2023-06-30 | 2023-08-01 | 无锡卓瓷科技有限公司 | Silicon carbide electrostatic chuck and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN117832036A (en) | 2024-04-05 |
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