CN117813692A - Nitride-based semiconductor carrier and calibration method thereof - Google Patents
Nitride-based semiconductor carrier and calibration method thereof Download PDFInfo
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- CN117813692A CN117813692A CN202280049563.2A CN202280049563A CN117813692A CN 117813692 A CN117813692 A CN 117813692A CN 202280049563 A CN202280049563 A CN 202280049563A CN 117813692 A CN117813692 A CN 117813692A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 160
- 239000004065 semiconductor Substances 0.000 title claims abstract description 160
- 238000000034 method Methods 0.000 title claims description 32
- 235000012431 wafers Nutrition 0.000 claims description 70
- 239000000835 fiber Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 4
- 230000008569 process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- -1 GaN Chemical class 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67775—Docking arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
A nitride-based semiconductor carrier includes a tuning carrier, a top carrier, a plurality of tuning devices, a wafer cassette, and a nitride-based semiconductor wafer. The top carrier is disposed above the adjustment carrier. The adjusting device is connected with the adjusting carrier and the top carrier. The wafer cassette is disposed on the top carrier. The nitride-based semiconductor wafer is disposed in the wafer cassette. The top carrier has a plurality of sensors. The adjustment carrier has a controller. The controller is electrically connected to the sensor and the adjustment device. The controller is configured to control the adjustment device in accordance with a signal from the sensor. The adjustment device is configured to control the rotation and position of the top carrier. The nitride-based semiconductor wafer has a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, and a 2DEG region.
Description
Technical Field
The present disclosure relates generally to nitride-based semiconductor carriers. More particularly, the present disclosure relates to a nitride-based semiconductor carrier having an adjustment device.
Background
In recent years, intensive research into High Electron Mobility Transistors (HEMTs) has been very popular, especially in high power switches and high frequency applications. HEMTs based on tri-nitrides form quantum well-like structures with heterojunction interfaces between two materials with different bandgaps, thus accommodating two-dimensional electron gas (2 DEG) regions to meet the needs of high power/high frequency devices. Devices having heterostructures include Heterojunction Bipolar Transistors (HBTs), heterojunction Field Effect Transistors (HFETs) and modulation doped field effect transistors (MODFETs) in addition to HEMTs.
Disclosure of Invention
According to one aspect of the present disclosure, a nitride-based semiconductor carrier is provided. The nitride-based semiconductor carrier includes a tuning carrier, a top carrier, a plurality of tuning devices, a wafer cassette, and a nitride-based semiconductor wafer. The top carrier is disposed above the adjustment carrier. The adjusting device is connected with the adjusting carrier and the top carrier. The wafer cassette is disposed on the top carrier. The nitride-based semiconductor wafer is disposed in the wafer cassette. The top carrier has a plurality of sensors. The adjustment carrier has a controller. The controller is electrically connected to the sensor and the adjustment device. The controller is configured to control the adjustment device in accordance with a signal from the sensor. The adjustment device is configured to control the rotation and position of the top carrier. The nitride-based semiconductor wafer has a first nitride-based semiconductor layer and a second nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The band gap of the second nitride-based semiconductor layer is larger than that of the first nitride-based semiconductor layer. A 2DEG region is formed near an interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.
According to one aspect of the present disclosure, a method of calibrating a nitride-based semiconductor carrier is provided. The calibration method comprises the following steps: detecting rotation of the top carrier by a plurality of sensors of the top carrier; adjusting the top carrier by adjusting the carrier; and adjusting the top carrier by a plurality of adjustment devices. The top carrier is disposed above the adjustment carrier. The adjusting device is connected with the adjusting carrier and the top carrier. The wafer cassette is disposed on the top carrier. The nitride-based semiconductor wafer is disposed in the wafer cassette. The adjustment carrier has a controller. The controller is electrically connected to the sensor and the adjustment device. The controller is configured to control the adjustment device in accordance with signals from the sensor, and the adjustment device is configured to control the rotation and position of the top carrier. The nitride-based semiconductor wafer has a first nitride-based semiconductor layer and a second nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The band gap of the second nitride-based semiconductor layer is larger than that of the first nitride-based semiconductor layer. A 2DEG region is formed near an interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.
According to one aspect of the present disclosure, a nitride-based semiconductor carrier is provided. The nitride-based semiconductor carrier includes a plurality of conditioning devices, a top carrier, a wafer cassette, and a nitride-based semiconductor wafer. The top carrier is arranged on the adjusting device. The wafer cassette is disposed on the top carrier. The nitride-based semiconductor wafer is disposed in the wafer cassette. The top carrier has a plurality of sensors. The adjustment device is configured to adjust the top carrier. The nitride-based semiconductor wafer is horizontally disposed in the wafer cassette. The nitride-based semiconductor wafer has a first nitride-based semiconductor layer and a second nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The band gap of the second nitride-based semiconductor layer is larger than that of the first nitride-based semiconductor layer. A 2DEG region is formed near an interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.
With the above configuration, the adjustment device can adjust the top carrier so as to calibrate the rotation of the nitride-based semiconductor wafer and its position, and the nitride-based semiconductor wafer can be horizontally arranged.
Drawings
The various aspects of the disclosure will be readily appreciated from a reading of the following detailed description taken in conjunction with the drawings. It should be noted that the various features may not be drawn to scale. That is, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. Embodiments of the present disclosure will be described in more detail below with reference to the attached drawing figures:
fig. 1 is a perspective view of a nitride-based semiconductor carrier according to some embodiments of the present disclosure;
fig. 2 is a block diagram of a nitride-based semiconductor carrier in accordance with some embodiments of the present disclosure;
fig. 3 is a side cross-sectional view of a nitride-based semiconductor wafer according to some embodiments of the present disclosure;
FIG. 4 is a perspective view of an adjustment carrier, top carrier, and adjustment device according to some embodiments of the present disclosure;
fig. 5 is a front view of an adjustment carrier, top carrier, and adjustment device according to some embodiments of the present disclosure;
FIG. 6 is a block diagram of a controller according to some embodiments of the present disclosure;
fig. 7 is a flow chart of a method of calibrating a nitride-based semiconductor carrier in accordance with some embodiments of the present disclosure; and
fig. 8 is another perspective view of a nitride-based semiconductor carrier in accordance with some embodiments of the present disclosure.
Detailed Description
Common reference numerals are used throughout the drawings and the detailed description to refer to the same or like parts. Embodiments of the present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.
Spatial descriptions, such as "upper," "above," "below," "upper," "left," "right," "lower," "top," "bottom," "vertical," "horizontal," "side," "upper," "lower," "upper," "above … …," "below … …," etc., are specified with respect to a component or a group of components, or a plane of a component or a group of components, with respect to the orientation of the components shown in the relevant figures. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and that the actual implementation of the structures described herein may be spatially arranged in any direction or manner so long as such arrangement does not depart from the advantages of the disclosed embodiments.
Further, it is noted that the actual shape of the various structures described as being approximately rectangular may be curved in an actual device, have rounded edges, have somewhat uneven thickness, etc., due to limitations in device manufacturing conditions. Straight lines and right angles are used merely for convenience in representing layers and features.
In the following description, a semiconductor device/element/package/carrier, a calibration method thereof, and the like are set forth as preferred examples. It will be apparent to those skilled in the art that modifications, including additions and/or substitutions, can be made without departing from the scope and spirit of the disclosure. Specific details may be omitted to avoid obscuring the disclosure; however, this disclosure is written in order to enable any person skilled in the art to practice the teachings herein without undue experimentation.
Fig. 1 is a perspective view of a nitride-based semiconductor carrier 1 according to some embodiments of the present disclosure, and fig. 2 is a block diagram of the nitride-based semiconductor carrier 1 according to some embodiments of the present disclosure. Referring to fig. 1 and 2, the nitride-based semiconductor carrier 1 has a conditioning carrier 10, a top carrier 11, a plurality of conditioning devices 12, a wafer cassette 13, and a nitride-based semiconductor wafer 14.
The top carrier 11 is arranged above the adjustment carrier 10, and the adjustment device 12 connects the adjustment carrier 10 and the top carrier 11. A wafer cassette 13 is provided on the top carrier 11, and a nitride-based semiconductor wafer 14 is provided in the wafer cassette 13. Fig. 3 is a side cross-sectional view of a nitride-based semiconductor wafer 14 in accordance with some embodiments of the present disclosure. Referring to fig. 3, the nitride-based semiconductor wafer 14 has a nitride-based semiconductor layer 140 and a nitride-based semiconductor layer 141. The nitride-based semiconductor layer 141 is disposed on the nitride-based semiconductor layer 140. The band gap of the nitride-based semiconductor layer 141 is larger than that of the nitride-based semiconductor layer 140, and a 2DEG region is formed near the interface between the nitride-based semiconductor layer 140 and the nitride-based semiconductor layer 141.
Referring to fig. 1 and 2, the top carrier 11 has a plurality of sensors 110 and the adjustment carrier 10 has a controller 100. The controller 100 is electrically connected to the sensor 110 and the adjustment device 12.
The controller 100 is arranged in the adjustment carrier 10. The controller 100 is configured to control the adjustment device 12 in accordance with signals from the sensor 110, and the adjustment device 12 is configured to control the rotation and position of the top carrier 11. Thus, by adjusting the distance between the adjustment carrier 10 and the top carrier 11, the adjustment device 12 can calibrate the position of the nitride-based semiconductor wafer 14 in the wafer cassette 13. Specifically, the top carrier 11 in the present embodiment may be a carrier of a load port of the nitride-based semiconductor wafer 14, and the nitride-based semiconductor carrier 1 is adapted to store wafers by the wafer cassette 13 on the top carrier 11. Thus, the adjustment device 12 can properly calibrate the position of the nitride-based semiconductor wafer 14.
For example, in a manufacturing process, the nitride-based semiconductor carrier 1 needs to be calibrated once at the beginning of the process, and the nitride-based semiconductor carrier 1 may automatically calibrate the top carrier 11 in the process in order to store the nitride-based semiconductor wafer 14 in place throughout the process.
In other words, the top carrier 11 is arranged on the adjustment means 12, and the adjustment means 12 are configured to adjust the top carrier 11 in accordance with the signal from the sensor 110 of the top carrier 11. Therefore, the nitride-based semiconductor wafer 14 can be horizontally disposed in the wafer cassette 13, and the nitride-based semiconductor wafer 14 can be appropriately stored in the nitride-based semiconductor carrier 1.
Referring to fig. 3, in the present embodiment, the nitride-based semiconductor wafer 14 has a plurality of HEMTs, the nitride-based semiconductor layer 140 may form tunnel layers of the HEMTs, and the nitride-based semiconductor layer 141 may form barrier layers of the HEMTs. For example, the nitride-based semiconductor layer 140 may include gallium nitride (GaN), and the nitride-based semiconductor layer 141 may include aluminum gallium nitride (AlGaN).
In particular, exemplary materials for the nitride-based semiconductor layers 140, 141 may include, for example, but not limited to, nitrides or III-V compounds, such as GaN, alN, inN, inAlN, in x Al y Ga (1-x-y) N (where x+y is less than or equal to 1), al y Ga (1-y) N (where y.ltoreq.1).
The exemplary materials of the nitride-based semiconductor layers 140, 141 are selected such that the band gap (i.e., the forbidden band width) of the nitride-based semiconductor layer 141 is greater than the band gap of the nitride-based semiconductor layer 140, thereby making their electron affinities different and forming a heterojunction therebetween. Therefore, the nitride-based semiconductor layers 140 and 141 may serve as a channel layer and a barrier layer, respectively. A triangular well potential is generated at the bonding interface between the channel layer and the barrier layer such that electrons accumulate in the triangular well potential, thereby creating a two-dimensional electron gas (2 DEG) region near the heterojunction.
Fig. 4 is a perspective view of an adjustment carrier 10, a top carrier 11, and an adjustment device 12 according to some embodiments of the present disclosure, and fig. 5 is a front view of an adjustment carrier 10, a top carrier 11, and an adjustment device 12 according to some embodiments of the present disclosure. Referring to fig. 4 and 5, the adjustment carrier 10 includes a carrier plate 101 and a plurality of threaded holes 102. The adjustment device 12 passes through the threaded bore 102, and the adjustment device 12 is coupled to the threaded bore 102. Specifically, each adjustment device 12 has a threaded shaft (or screw) that mates with one of the threaded bores 102. Each adjustment device 12 has a motor arranged below the carrier plate 101, which motor is configured to rotate a threaded shaft, the position of which in the threaded hole 102 is adjustable, the threaded shaft of the adjustment device 12 being able to push or pull the top carrier 11 towards the adjustment carrier 10.
In this embodiment, the top carrier 11 has a carrier plate 111 and a plurality of fixtures 112. The fixing device 112 is disposed on the carrying surface 1110 of the carrier 111, and the wafer cassette 13 is disposed on the carrying surface 1110. Referring to fig. 1, the fixing device 112 is coupled with the pod 13, and thus, the fixing device 112 may fix the position of the pod 13 on the top carrier 11.
Referring to fig. 4 and 5, the carrier 111 has a connection surface 1111, and the connection surface 1111 is opposite to the carrying surface 1110. The adjusting device 12 passes through the threaded bore 102 of the adjustment carrier 10 and is connected to the connection surface 1111 of the carrier plate 111. Thus, the adjustment device 12 may push or drag the top carrier 11, thereby rotating and calibrating the top carrier 11.
In addition, the carrier plate 101 of the adjustment carrier 10 has a top surface 1010, and the carrying surface 1110 of the carrier plate 111 has the same size as the top surface 1010 of the carrier plate 101. The adjustment carrier 10 can thus be suitably adjusted and calibrated to the top carrier 11 by means of the adjustment device 12.
Specifically, screw holes 102 are located at corners of the carrier plate 101. Each threaded hole 102 extends through a corner of the top surface 1010 of the carrier plate 101. Thus, the adjustment device 12 may pass through the corner of the carrier plate 101, and the adjustment device 12 may be connected to the corner of the connection surface 1111. By extending or retracting the threaded shaft (or screw) of the adjustment means 12, the distance between the corner of the adjustment carrier 10 and the top carrier 11 can be adjusted, thereby calibrating the position and rotation of the top carrier 11.
In addition, the fixing device 112 is located at a corner of the bearing surface 1110 of the carrier 111. Thus, each fixture 112 is positioned above one of the adjustment devices 12, and the adjustment devices 12 can calibrate the position of the fixture 112 and thus the top carrier 11 of the wafer cassette 13 carrying the nitride-based semiconductor wafers 14.
In addition, the shape of the bearing surface 1110 is square, and the shape of the top surface 1010 of the carrier plate 101 is square. Thus, the loading surface 1110 is adapted to load the wafer cassette 13, while the adjustment carrier 10 is adapted to properly adjust the top carrier 11. Specifically, the bearing surface 1110 of the carrier 111 and the top surface 1010 of the carrier 101 have the same shape, and the adjustment device 12 connects the corners of the carrier 111 and the carrier 101, so that the position of the top carrier 11 can be correctly calibrated.
In this embodiment, the carrier plate 101 may vertically move the carrier plate 111. Specifically, the maximum distance h1 between the carrier 101 and the carrier 111 is 20 mm. Therefore, when the vertical position of the carrier plate 111 of the top carrier 11 needs to be adjusted in a wide range, the carrier plate 101 can move the vertical position of the carrier plate 111 in the nitride-based semiconductor carrier 1. After the vertical position of the carrier plate 111 is calibrated by the vertical movement of the carrier plate 101, the adjustment device 12 has a sufficient adjustment range to adjust the angular position or position of the carrier plate 111. In other words, the maximum distance h1 between the carrier plate 101 and the carrier plate 111 is 20 mm, so that the adjustment device 12 has enough space to adjust the rotation of the carrier plate 111 of the top carrier 11. In other words, the adjustment distance of the adjustment means 12 does not exceed 10 mm, and therefore the adjustment means 12 has a sufficient range to adjust the top carrier 11.
In one aspect, referring to fig. 1, the adjustment device 12 is configured to adjust the wafer cassette 13 on the top carrier 11, with the nitride-based semiconductor wafer 14 horizontally disposed in the wafer cassette 13. The adjustment device 12 adjusts the top carrier 11 in real time during the manufacturing process, and the nitride-based semiconductor wafer 14 may be kept horizontally disposed in the wafer cassette 13.
In one aspect, the adjustment carrier 10 is configured to receive the adjustment device 12, and the adjustment device 12 is configured to rotate or move the top carrier 11. The adjustment carrier 10 can only be moved in the direction d1 (vertical direction) in order to move the top carrier 11 in the direction d 1. The adjustment device 12 is fixed to the adjustment carrier 10 to calibrate the rotation and slight movement of the top carrier 11. Thus, the adjustment device 12 can properly calibrate the top carrier 11 so that the nitride-based semiconductor wafer 14 is kept horizontally disposed.
In one aspect, the adjustment carrier 10 is disposed at various angles and the top carrier 11 is disposed horizontally. In other words, the adjustment carrier 10 is not horizontally disposed, whereas the top carrier 11 is horizontally disposed. The adjustment device 12 connects the adjustment carrier 10 and the top carrier 11 such that the adjustment carrier 10 always maintains different angles, while the top carrier 11 always is arranged horizontally. Therefore, the nitride-based semiconductor wafer 14 can be horizontally disposed, and the nitride-based semiconductor carrier 1 can correctly store the nitride-based semiconductor wafer 14 throughout the entire manufacturing process.
Referring to fig. 4 and 5, the sensors 110 are respectively provided in the fixtures 112, and the sensors 110 are gyroscopes. Specifically, the sensor 110 is a gyroscope, which can detect the rotation of the corners of the top carrier 11. Thus, the controller 100 (as shown in fig. 2) may receive a signal corresponding to the rotation of the corners of the top carrier 11, and the controller 100 may control the adjustment device 12 in response to the signal from the gyroscope. The adjustment means 12 are connected to the corners of the top carrier 11, so that the adjustment means 12 can effectively calibrate the top carrier 11 in response to the signal from the sensor 110.
Specifically, the sensor 110 is a fiber optic gyroscope. The control precision of the fiber optic gyroscope can reach 0.002 degrees/h, and the controller 100 can accurately calibrate the top carrier 11 in real time through the adjusting device 12.
In one aspect, the controller 100 of the present embodiment is a microcontroller unit. Specifically, the controller 100 is an Intel MCS-51 single chip controller, the controller 100 being configured to receive signals from the sensor 110 and generate signals to the adjustment device 12.
Fig. 6 is a block diagram of a controller 100 according to some embodiments of the present disclosure. Referring to fig. 6, in particular, ports P1.0, P1.1 are connected to one of the sensors 110, ports P1.2, P1.3 are connected to the other of the sensors 110, ports P1.4, P1.5 are connected to the other of the sensors 110, and ports P1.6, P1.7 are connected to the last of the sensors 110. Port P0.0 is connected to one of the adjustment devices 12, port P0.1 is connected to another of the adjustment devices 12, port P0.2 is connected to yet another of the adjustment devices 12, and port P0.3 is connected to the last of the adjustment devices 12. Thus, the controller 100 may suitably adjust the top carrier 11 by the adjustment means 12 in accordance with the signal from the sensor 110.
In the present embodiment, the calibration method of the nitride-based semiconductor carrier 1 includes: rotation of the top carrier 11 is detected by a sensor 110 of the top carrier 11. In other words, the calibration method detects a rotational change of the sensor 110, and the sensor 110 generates a signal according to the rotation of the top carrier 11.
After detecting the rotation of the top carrier 11, the calibration method adjusts the top carrier 11 by adjusting the carrier 10. Specifically, the controller 100 processes signals from the sensor 110. If the top carrier 11 needs to be vertically aligned over a large area, the adjustment carrier 10 will move the top carrier 11 vertically. In other words, the step of adjusting the top carrier 11 by adjusting the carrier 10 comprises: the height of the top carrier 11 is adjusted by adjusting the carrier 10. Thus, the vertical position of the top carrier 11 can be calibrated directly by adjusting the carrier 10.
After the adjustment of the top carrier 11 by the adjustment means 12, the calibration method adjusts the top carrier 11 by the adjustment means 12. Specifically, after the vertical position of the top carrier 11 is calibrated by adjusting the carrier 10, the calibration method calibrates the direction and position of the top carrier 11 by adjusting the device 12. In other words, the step of adjusting the top carrier 11 by the adjustment means 12 comprises: the top carrier 11 is rotated by the adjustment means 12. Thus, the top carrier 11 can be properly calibrated.
Referring to fig. 1, in the present embodiment, a nitride-based semiconductor carrier 1 includes a top detector 16. The top detector 16 is located above the top carrier 11. Specifically, the nitride-based semiconductor carrier 1 includes a housing 15, and the adjustment carrier 10 and the top carrier 11 are disposed in the housing 15. A top detector 16 is provided on the inner wall of the housing 15, the top detector 16 being located above the top carrier 11. Thus, the top detector 16 can detect the position of the top carrier 11 when the top carrier 11 is over-calibrated to the top, and maintain the calibration range of the adjustment device 12 within an appropriate range.
In the present embodiment, the nitride-based semiconductor carrier 1 includes a bottom detector 17. The bottom detector 17 is arranged below the adjustment carrier 10. Specifically, the bottom detector 17 is provided on the inner wall of the housing 15, and the bottom detector 17 is provided below the adjustment carrier 10. Thus, if the adjustment carrier 10 is over-calibrated to the bottom, the bottom detector 17 can detect the position of the adjustment carrier 10 and keep the calibration range of the adjustment carrier 10 within an appropriate range.
In one aspect, in the calibration method of the nitride-based semiconductor carrier 1, after the step of adjusting the top carrier 11 by the adjusting means 12, the calibration method includes: detecting a top stop signal by the top detector 16; and detecting a bottom stop signal by the bottom detector 17.
Fig. 7 is a flow chart of a method of calibrating a nitride-based semiconductor carrier in accordance with some embodiments of the present disclosure. Referring to fig. 7, the calibration method detects whether the controller 100 receives a rotation signal from the sensor 110 (step S1). In other words, if the top carrier 11 rotates, the sensor 110 detects the rotation and generates a signal to the controller 100.
After detecting the rotation signal, the calibration method calculates a compensation value by the controller 100 (step S2). Specifically, the controller 100 calculates the compensation value by the following formula:
0(Z i ,Z i+1 ,Z i+2 ,Z i+3 )＝I(X i ,Y i ),i＝1,2,3,4
k1 is the diagonal dimension of the top carrier 11.
In the formula, X i And Y i Is the rotation signal from the sensor 110 and K2 is a constant corresponding to the total movement of the adjustment carrier 10. For example, if the compensation height is greater than 10 mm, the controller compensates the height of the top carrier 11 by K2 (adjusting the movement of the carrier 10) (step S3). Z is Z i Is the compensation value, Z, of one of the adjustment devices 12 i+1 And Z i+2 Is the compensation value of the adjacent adjusting means 12 (step S4).
During the calibration process, the calibration method continuously detects a top stop signal or a bottom stop signal (step S5). As shown in fig. 1, the top stop signal is generated by a top detector 16, and as shown in fig. 1, the bottom stop signal is generated by a bottom detector 17. If a top stop signal is detected, indicating an overcompensation of the top carrier 11 by the adjustment means 12, the controller 100 will recalculate the compensation value and recalibrate the top carrier 11 by adjusting the vertical movement of the carrier 10. If a bottom stop signal is detected, indicating that the adjustment carrier 10 is overcompensating, the controller 100 will recalculate the compensation value and move the adjustment carrier 10.
Fig. 8 is another perspective view of a nitride-based semiconductor carrier 1 according to some embodiments of the present disclosure. Referring to fig. 1 and 8, in the present embodiment, the top carrier 11 is disposed in the housing 15, and the top carrier 11 is configured to move between a position as shown in fig. 8 and a position as shown in fig. 1. As shown in fig. 8, the top carrier 11 is positioned at the top of the housing 15. Thus, the nitride-based semiconductor carrier 1 may be adapted to provide a movable mode and a processing mode. In the movable mode (as shown in fig. 8), the operator may be adapted to move the wafer cassette 13 and the nitride-based semiconductor wafer 14 by hand. In the processing mode (as shown in fig. 1), the cassette 13 may be used by other equipment to obtain nitride-based semiconductor wafers 14. In other words, the nitride-based semiconductor carrier 1 is suitable for coupling with most processing equipment.
In this embodiment, the top carrier 11 is connected to the housing 15 by means of the adjustment carrier 10. Thus, the position of the top carrier 11 can be adjusted by adjusting the carrier 10, and the rotation of the top carrier 11 can be adjusted by adjusting the carrier 10 by adjusting the device 12.
The embodiments were chosen and described in order to best explain the principles of the disclosure and its practical application, thereby enabling others skilled in the art to understand the disclosure for various embodiments and with various modifications as are suited to the particular use contemplated.
The terms "substantially," "approximately," and "about" are used herein to describe and illustrate minor variations. When used in connection with an event or circumstance, the terms can include instances where the event or circumstance occurs precisely, and instances where the event or circumstance occurs approximately. For example, when used with a numerical value, the term can include a range of variation of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term "substantially coplanar" may refer to the two surfaces being in the same plane within a micron, such as within 40 microns, within 30 microns, within 20 microns, within 10 microns, or within 1 micron.
As used herein, the singular terms "a," "an," and "the" may include plural referents unless the context clearly dictates otherwise. In the description of certain embodiments, a component being placed "on" or "over" another component may include the case where the former component is directly on (e.g., in physical contact with) the latter component, as well as the case where one or more intervening components are located between the former and latter components.
While the present disclosure has been depicted and described with reference to particular embodiments thereof, such depicted and described are not meant to be limiting. It will be understood by those skilled in the art that various changes may be made and equivalents substituted without departing from the true spirit and scope of the disclosure as defined by the appended claims. The illustrations are not necessarily drawn to scale. There may be differences between artistic depictions in the present disclosure and actual apparatus due to manufacturing processes and tolerances. Furthermore, it will be appreciated that the actual devices and layers may deviate from the rectangular layer descriptions in the figures, possibly including corner facets or edges, rounded corners, etc., due to the fabrication process of conformal deposition, etching, etc. Other embodiments of the disclosure are also possible, not specifically described. The specification and drawings are to be regarded in an illustrative rather than a restrictive sense. Modifications may be made to adapt a particular situation, material, composition of matter, method or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the appended claims. Although the methods disclosed herein are described with reference to particular operations being performed in a particular order, it will be understood that these operations may be combined, sub-divided, or reordered to form an equivalent method without departing from the teachings of the present disclosure. Thus, the order and grouping of operations is not a limitation unless specifically indicated herein.
Claims (25)
1. A nitride-based semiconductor carrier comprising:
adjusting a carrier;
a top carrier disposed above the adjustment carrier;
a plurality of adjustment means connecting the adjustment carrier and the top carrier;
a wafer cassette disposed on the top carrier; and
a nitride-based semiconductor wafer disposed in the wafer cassette;
wherein the top carrier has a plurality of sensors and the adjustment carrier has a controller electrically connected to the sensors and the adjustment device;
wherein the controller is configured to control the adjustment device in accordance with signals from the sensor and the adjustment device is configured to control the rotation and position of the top carrier;
wherein the nitride-based semiconductor wafer has a first nitride-based semiconductor layer and a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer, the second nitride-based semiconductor layer having a band gap greater than that of the first nitride-based semiconductor layer, and a 2DEG region is formed near an interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.
2. The nitride-based semiconductor carrier according to claim 1,
wherein the adjustment carrier comprises:
a first carrier plate; and
a plurality of threaded holes;
wherein the top carrier comprises:
a second carrier plate; and
the fixing devices are arranged on the bearing surface of the second carrier plate;
the adjusting device penetrates through the threaded hole and is connected with the connecting surface of the second carrier plate, the connecting surface is opposite to the bearing surface, and the bearing surface and the top surface of the first carrier plate have the same size.
3. A nitride-based semiconductor carrier as claimed in any one of the preceding claims, wherein the threaded holes are located at corners of a first carrier plate and the fixing means are located at corners of the second carrier plate.
4. A nitride-based semiconductor carrier as claimed in any one of the preceding claims, wherein the bearing surface is square in shape and the top surface of the first carrier plate is square in shape.
5. Nitride-based semiconductor carrier according to any one of the preceding claims, wherein the maximum distance between the first carrier plate and the second carrier plate is 20 millimeters.
6. A nitride-based semiconductor carrier as claimed in any one of the preceding claims, wherein the sensor is a gyroscope.
7. A nitride-based semiconductor carrier as claimed in any one of the preceding claims, wherein the sensor is a fiber optic gyroscope.
8. Nitride-based semiconductor carrier according to any one of the preceding claims, wherein the controller is a microcontroller unit.
9. The nitride-based semiconductor carrier of any one of the preceding claims, further comprising:
the shell body is provided with a plurality of grooves,
wherein the adjustment carrier is disposed in the housing, the top carrier is configured to move between a first position and a second position, the first position is located at the top of the housing.
10. A nitride-based semiconductor carrier as claimed in any one of the preceding claims, wherein the top carrier is connected to the housing by the tuning carrier.
11. The nitride-based semiconductor carrier of any one of the preceding claims, further comprising:
a top detector is provided to detect the presence of a liquid,
wherein the top detector is disposed above the top carrier.
12. The nitride-based semiconductor carrier of any one of the preceding claims, further comprising:
a bottom detector is provided to detect the presence of a liquid,
wherein the bottom detector is arranged below the adjustment carrier.
13. A nitride-based semiconductor carrier according to any one of the preceding claims, wherein the adjustment means is configured to adjust the wafer cassette on the top carrier in which the nitride-based semiconductor wafers are horizontally arranged.
14. A nitride-based semiconductor carrier as claimed in any one of the preceding claims, wherein the adjustment carrier is configured to accommodate the adjustment means and the adjustment means is configured to rotate or move the top carrier.
15. Nitride-based semiconductor carrier according to any of the preceding claims, wherein the adjustment carrier is arranged at different angles and the top carrier is arranged horizontally.
16. A method of calibrating a nitride-based semiconductor carrier, comprising:
detecting rotation of the top carrier by a plurality of sensors of the top carrier;
adjusting the top carrier by adjusting the carrier; and
adjusting the top carrier by a plurality of adjustment devices;
the top carrier is arranged above the adjusting carrier, the adjusting device is connected with the adjusting carrier and the top carrier, a wafer box is arranged on the top carrier, and a nitride-based semiconductor wafer is arranged in the wafer box;
wherein the adjustment carrier has a controller electrically connected to the sensor and the adjustment device;
wherein the controller is configured to control the adjustment device in accordance with signals from the sensor and the adjustment device is configured to control the rotation and position of the top carrier;
wherein the nitride-based semiconductor wafer has a first nitride-based semiconductor layer and a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer, the second nitride-based semiconductor layer having a band gap greater than that of the first nitride-based semiconductor layer, and a 2DEG region is formed near an interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.
17. The calibration method of claim 16, wherein the sensor generates the signal as a function of rotation of the top carrier.
18. Calibration method according to any of the preceding claims, wherein the step of adjusting the top carrier by the adjustment carrier comprises:
and adjusting the height of the top carrier through the adjusting carrier.
19. Calibration method according to any of the preceding claims, wherein the step of adjusting the top carrier by the adjustment means comprises:
the top carrier is rotated by the adjustment means.
20. Calibration method according to any of the preceding claims, further comprising, after the step of adjusting the top carrier by the adjustment means:
detecting a top stop signal by a top detector;
wherein the top detector is disposed above the top carrier.
21. A nitride-based semiconductor carrier comprising:
a plurality of adjustment devices;
a top carrier disposed on the adjustment device;
a wafer cassette disposed on the top carrier; and
a nitride-based semiconductor wafer disposed in the wafer cassette;
wherein the top carrier has a plurality of sensors, the adjustment device is configured to adjust the top carrier, the nitride-based semiconductor wafer is horizontally disposed in the wafer cassette;
wherein the nitride-based semiconductor wafer has a first nitride-based semiconductor layer and a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer, the second nitride-based semiconductor layer having a band gap greater than that of the first nitride-based semiconductor layer, and a 2DEG region is formed near an interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer.
22. The nitride-based semiconductor carrier of claim 21, further comprising:
adjusting a carrier;
wherein the top carrier is disposed above the adjustment carrier, the adjustment device connects the adjustment carrier and the top carrier, the adjustment carrier has a controller electrically connected to the sensor and the adjustment device, the controller is configured to control the adjustment device according to signals from the sensor, the adjustment device is configured to control rotation and position of the top carrier.
23. The nitride-based semiconductor carrier of any one of the preceding claims, further comprising:
a top detector is provided to detect the presence of a liquid,
wherein the top detector is disposed above the top carrier.
24. The nitride-based semiconductor carrier of any one of the preceding claims, further comprising:
a bottom detector is provided to detect the presence of a liquid,
wherein the bottom detector is arranged below the adjustment carrier.
25. A nitride-based semiconductor carrier as claimed in any one of the preceding claims, wherein the adjustment distance of the adjustment means is no more than 10 mm.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2022/136189 WO2024113356A1 (en) | 2022-12-02 | 2022-12-02 | Nitride-based semiconductor carrier and method for calibrating the same |
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| Publication Number | Publication Date |
|---|---|
| CN117813692A true CN117813692A (en) | 2024-04-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280049563.2A Pending CN117813692A (en) | 2022-12-02 | 2022-12-02 | Nitride-based semiconductor carrier and calibration method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN117813692A (en) |
| WO (1) | WO2024113356A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335718A (en) * | 1994-06-07 | 1995-12-22 | Hitachi Ltd | Wafer carrier device |
| KR100948300B1 (en) * | 2007-12-27 | 2010-03-17 | 주식회사 동부하이텍 | An apparatus for transmitting a wafer cassette and a method of transmitting the wafer cassette |
| CN103839860B (en) * | 2012-11-23 | 2017-03-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Piece box lifting device and the film magazine Transmission system with which |
| CN114496864A (en) * | 2020-11-11 | 2022-05-13 | 上海微电子装备（集团）股份有限公司 | Film box and film box positioning device |
| CN114144891B (en) * | 2021-07-16 | 2023-05-26 | 英诺赛科(苏州)科技有限公司 | Nitride-based semiconductor device and method of manufacturing the same |
-
2022
- 2022-12-02 CN CN202280049563.2A patent/CN117813692A/en active Pending
- 2022-12-02 WO PCT/CN2022/136189 patent/WO2024113356A1/en unknown
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| WO2024113356A1 (en) | 2024-06-06 |
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