CN117811508A - Radio frequency power amplifying chip, radio frequency power amplifier and wireless signal transmitting system - Google Patents

Abstract

The application relates to the technical field of radio, in particular to a radio frequency power amplification chip, a radio frequency power amplifier and a wireless signal transmitting system, wherein an output end of a first amplification branch in the radio frequency power amplification chip comprises a combining network, and the combining network comprises: the first end of the first bonding wire is connected with the output end of the first amplifying branch; the first end of the first bonding wire is connected with the second end of the first bonding wire; a third bonding wire, the first end of which is connected with the second end of the second bonding wire, and the second end of which is used for being connected with the combined impedance matching circuit; the horizontal flow direction of the radio frequency signal in the first bonding wire and the third bonding wire is different from the horizontal flow direction of the radio frequency signal in the second bonding wire in the first direction. The horizontal flow directions of the radio frequency signals on the first bonding wire and the third bonding wire are different from the horizontal flow direction of the radio frequency signals on the second bonding wire, the inductance value of the whole body is improved by utilizing the mutual inductance effect of the inductance, the loss of the whole body can be reduced to a certain extent, and the efficiency of the radio frequency power amplifier is improved.

Description

Radio frequency power amplifying chip, radio frequency power amplifier and wireless signal transmitting system

Technical Field

The application relates to the technical field of radio, in particular to a radio frequency power amplification chip, a radio frequency power amplifier and a wireless signal transmitting system.

Background

A monolithic radio frequency integrated circuit (Radio Frequency Integrated Circuit, RFIC) is a functional circuit formed by a series of semiconductor processing methods to fabricate passive and active devices on a semi-insulating semiconductor substrate and connected together.

The radio frequency power amplifier is mainly applied to low-power wireless access nodes (small cells) and macro station driving products at present, and utilizes parasitic capacitance of the radio frequency power amplifier, added inductance or bonding wires to realize the combining function of a combining output circuit, so that the radio frequency power amplifier replaces micro-strip combining of a traditional Printed Circuit Board (PCB) and can effectively reduce the area. As shown in fig. 1, fig. 1 is a schematic diagram of the electrical principle of a radio frequency power amplifier. The combining network 103 may play a role in combining output, and in the working efficiency of the whole radio frequency power amplifier (doherty PA), the combining network 103 plays a crucial role, and the smaller the inductance loss is, the higher the working efficiency is.

As shown in fig. 2, fig. 2 is a schematic circuit diagram of a combining network. The combining network 103 comprises a first capacitor 201, a second capacitor 202 and an inductor 203, and in the circuit of the combining network, the inductance loss of the inductor 203 is more important than that of the first capacitor 201 and the second capacitor 202. In different frequency bands, the inductors 203 need to be different in size, and the inductors 203 can be constructed by using bonding wires. Fig. 3 is a schematic top view of a structure of an inductor constructed by using bonding wires in the prior art.

In many cases, a plurality of sections of bonding wires are needed to realize the needed inductance, and different routing modes have different inductance values and mutual inductance losses. In fig. 3, a metal sheet a2031 is used as an input terminal of a radio frequency signal, a metal sheet d2037 is used as an output terminal of the radio frequency signal, and a bonding wire a2032 and a metal sheet b2033 are adjacently disposed due to a limitation of a size. The radio frequency signal passes through bonding wire a2032, metal sheet b2033, bonding wire b2034, metal sheet c2035 and bonding wire c2036, and can be finally output through metal sheet d 2037. When the radio frequency signal passes through the bonding wire a2032 from the metal sheet a2031 to the metal sheet b2033, an induced electromagnetic field is generated on the bonding wire b2034 from right to left, and when the radio frequency signal passes through the bonding wire b2034 from the metal sheet b2033 to the metal sheet c2035, the flow direction of the radio frequency signal on the bonding wire a2032 is opposite, so that the radio frequency energy of the bonding wire b2034 and the mutual inductance energy generated by the bonding wire a2032 and the mutual inductance energy generated by the bonding wire b2034 cancel each other, and a certain loss of the radio frequency energy is caused, and in the same way, the mutual inductance generated by the bonding wire b2034 and the radio frequency energy transmitted by the bonding wire a2032 cancel each other, thereby reducing the working efficiency of the radio frequency power amplifier.

Disclosure of Invention

In order to solve one of the technical defects, an embodiment of the present application provides a radio frequency power amplifying chip, a radio frequency power amplifier and a wireless signal transmitting system, where the technical scheme is as follows:

according to a first aspect of an embodiment of the present application, the present application provides a radio frequency power amplification chip, configured to amplify a radio frequency signal by using a radio frequency power amplifier, where the radio frequency power amplification chip includes a first amplifying branch and a second amplifying branch, an input end of the second amplifying branch is configured to receive a radio frequency signal of a radio frequency output device, an output end of the second amplifying branch is configured to be connected to a combined impedance matching circuit of the radio frequency power amplifier, an input end of the first amplifying branch is configured to receive the radio frequency signal of the radio frequency output device, and an output end of the first amplifying branch includes a combined network, where the combined network includes:

the first end of the first bonding wire is connected with the output end of the first amplifying branch; a second bond wire having a first end connected to a second end of the first bond wire; a third bonding wire, the first end of which is connected with the second end of the second bonding wire, and the second end of which is used for being connected with the combined impedance matching circuit; the horizontal flow direction of the radio frequency signal at the first bonding wire and the third bonding wire is a first direction, the horizontal flow direction of the radio frequency signal at the second bonding wire is a second direction, and the first direction and the second direction are different.

According to a second aspect of embodiments of the present application, there is provided a radio frequency power amplifier comprising: a radio frequency power amplifying chip as described above; and the combined impedance matching circuit is connected with the radio frequency power amplification chip.

According to a third aspect of embodiments of the present application, there is provided a wireless signal transmission system including: a radio frequency output device and a signal transmitting device; as mentioned above, the rf power amplifier is connected to the rf output device and the signal transmitting device, respectively.

By adopting the radio frequency power amplifying chip provided in the embodiment of the application, the first amplifying branch and the second amplifying branch can amplify radio frequency signals respectively, and in the combining network of the first amplifying branch, the first bonding wire, the second bonding wire and the third bonding wire are connected in series to meet the requirement of inductance in the combining network, the horizontal flow direction of the radio frequency signals at the first bonding wire and the third bonding wire is the same, and the horizontal flow direction of the radio frequency signals at the second bonding wire is different, so that the mutual inductance effect of the inductance can be utilized, the integral inductance value can be improved, the required inductance value can be obtained, the integral inductance loss can be reduced to a certain extent, and the efficiency of the radio frequency power amplifier can be improved.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:

fig. 1 is a schematic diagram of the electrical principle of a radio frequency power amplifier;

FIG. 2 is a schematic circuit diagram of a combiner network;

FIG. 3 is a schematic top view of a prior art inductor constructed by bonding wires;

FIG. 4 is a schematic side view of the structure of FIG. 3;

FIG. 5 is a schematic top view of the hybrid network of the present application;

FIG. 6 is a schematic top view of a hybrid network according to the present application;

FIG. 7 is a schematic side view of the structure corresponding to FIG. 5;

fig. 8 is a diagram showing experimental comparison between the technical scheme of the present application and the prior art scheme.

Detailed Description

In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.

Radio frequency power amplifiers are one of the core components in wireless signal transmission systems, and are increasingly moving toward high power, high efficiency, and miniaturization. As shown in fig. 1, the rf power amplifier is composed of two amplifying branches, a first amplifying branch 101 and a second amplifying branch 102. When in the back-off power state, only the power amplifier of the first amplifying branch 101 is started, and the load line is maintained at a higher position, so that higher efficiency is maintained; in the saturated power state, the power amplifier of the second amplifying branch 102 is turned on, and the power amplifier load line of the first amplifying branch 101 is modulated to a lower position to generate higher power output, so that the efficiency is improved when the power is backed off. The radio frequency power amplifier may comprise a Doherty PA, among others.

As shown in fig. 1, the existing radio frequency power amplifier includes two amplifying branches, namely a first amplifying branch 101 and a second amplifying branch 102, where the first amplifying branch 101 includes a combining network 102, so as to realize the function of combining output. As shown in fig. 2 and 3, the combining network 102 may include a first capacitor 201, a second capacitor 202, and an inductor 203, and the inductor 203 may be formed by using a multi-segment bonding wire connection, as in fig. 3, the bonding wire a2032, the bonding wire b2034, and the metal sheet c2035 may be connected in series to form the inductor. Due to limitations of rf power amplifying chip size, inductance requirements, etc., multiple segments of bonding wires may need to be overlapped, such as bonding wire a2032 and bonding wire b2034 overlap in fig. 3, i.e., bonding wire a2032 and bonding wire b2034 are adjacent, but the flow directions of rf signals at bonding wire a2032 and bonding wire b2034 are opposite. When the radio frequency signal passes through the overlapped bonding wires, the magnetic field generated by the inductive current and the electromagnetic energy of the adjacent bonding wires are mutually counteracted due to the opposite flow directions of the radio frequency signal, a considerable part of energy is lost at the moment, and meanwhile, the inductance value is relatively reduced, so that the efficiency of the radio frequency power amplifier is reduced.

To achieve low frequency (e.g., below 2 GHZ) inductance, multiple bond wires are often required, and the bond wires may be relatively high in height, resulting in a large coupling area between adjacent bond wires. However, as the radio frequency signals of the adjacent bonding wires flow oppositely, the larger the coupling area (i.e. the superposition area) between the adjacent bonding wires is, the larger the generated mutual inductance loss is, so that the working efficiency of the radio frequency power amplifier is further reduced. Mutual inductance, i.e. induction of each other, refers to the phenomenon of interaction between two or more coils. When a current passes through one coil, electromagnetic induction is generated in the other coil.

As shown in fig. 4, fig. 4 is a schematic side view corresponding to fig. 3. Referring to the flow direction of the radio frequency signal in fig. 3 (the arrow indicates the flow direction of the radio frequency signal), it is known that the bonding wire a2032 and the bonding wire b2034 overlap, and the flow directions of the radio frequency signal at the bonding wire a2032 and the bonding wire b2034 are opposite. Since a certain inductance value needs to be met, the superposition area between the bonding wire a2032 and the bonding wire b2034, namely the coupling area of the bonding wire a2032 and the bonding wire b2034, is large, so that mutual inductance loss generated by the bonding wire a2032 and the bonding wire b2034 is large, and finally, the working efficiency of the radio frequency power amplifier is reduced.

The application provides a radio frequency power amplifying chip which can be used in a radio frequency power amplifier to amplify radio frequency signals. As shown in fig. 1, the radio frequency power amplification chip may include a first amplification branch 101, a second amplification branch 102, and a combining network 103. The input end of the second amplifying branch 102 is connected to a radio frequency output device, the output end of the second amplifying branch 102 may be connected to a combined impedance matching circuit (not shown) of the radio frequency power amplifier, the input end of the second amplifying branch 102 may receive a radio frequency signal output by the radio frequency output device, and after the second amplifying branch 102 amplifies the radio frequency signal, the output end of the second amplifying branch 102 outputs the radio frequency signal to the combined impedance matching circuit. The transistors in the first amplifying branch 101 and the second amplifying branch 102 include, but are not limited to, field effect transistors, BJT transistors, HEMT transistors, HBT transistors, and the like.

The input end of the first amplifying branch 101 is connected with radio frequency output equipment, the output end of the first amplifying branch 101 comprises a combining network 103, namely, the combining network 103 is arranged at the output end of the first amplifying branch 101, and the output end of the first amplifying branch 101 is connected with a combining impedance matching circuit of a radio frequency power amplifier through the combining network 103. The input end of the first amplifying branch 101 may receive the radio frequency signal output by the radio frequency output device, and after the first amplifying branch 101 amplifies the radio frequency signal, the output end of the first amplifying branch 101 outputs the radio frequency signal to the combined impedance matching circuit of the radio frequency power amplifier through the combined network.

As shown in fig. 2, the combining network 103 includes an inductor 203, a first capacitor 201 and a second capacitor 203, where a first end of the inductor 203 is connected to an output end of the first amplifying branch 101, a second end of the inductor 203 is connected to a combined impedance matching circuit of the radio frequency power amplifier, a first end of the first capacitor 201 is connected to a first end of the inductor 203, and a second end of the first capacitor 201 is grounded; the first end of the second capacitor 202 is connected to the second end of the inductor 203, and the second end of the second capacitor 202 is grounded. That is, the first end of the first capacitor 201 is connected between the first end of the inductor 203 and the output end of the first amplifying branch 101, and the second end of the first capacitor 201 is grounded; the first end of the second capacitor 202 is connected between the second end of the inductor 203 and the combined impedance matching circuit of the radio frequency power amplifier, and the second end of the second capacitor 202 is grounded.

Fig. 5 is a schematic top view of the combining network of the present application, and fig. 7 is a schematic side view of the combining network of the present application, as shown in fig. 5 and fig. 7. The combining network 103 includes a first bonding wire 305, a second bonding wire 306, and a third bonding wire 307, where a first end of the first bonding wire 305 is connected to an output end of the first amplifying branch, a second end of the first bonding wire 305 is connected to a first end of the second bonding wire 306, a second end of the second bonding wire 306 is connected to a first end of the third bonding wire 307, and a second end of the third bonding wire 307 is connected to a combining impedance matching circuit. I.e. the radio frequency signal first bonding wire 305, the second bonding wire 306 and the third bonding wire 307 are connected in series, a first end of the first capacitor 201 is connected to the first end of the first bonding wire 305, and a first end of the second capacitor 201 is connected to the second end of the third bonding wire 307. After being amplified by the first amplifying branch 101, the radio frequency signal sequentially flows through the first bonding wire 305, the second bonding wire 306 and the third bonding wire 307 through the first end of the first bonding wire 305, and then is transmitted to the combined impedance matching circuit of the radio frequency power amplifier from the third bonding wire 307, and is subjected to subsequent processing by the combined impedance matching circuit of the radio frequency power amplifier.

The first bonding wire 305, the second bonding wire 306 and the third bonding wire 307 may be disposed adjacently, and the horizontal flow direction of the radio frequency signal in the first bonding wire 305 and the third bonding wire 307 is a first direction, the horizontal flow direction of the radio frequency signal in the second bonding wire 306 is a second direction, and the first direction and the second direction are different, i.e. the horizontal flow direction of the radio frequency signal in the second bonding wire is different from the horizontal flow direction of the radio frequency signal in the first bonding wire and the third bonding wire. The first direction and the second direction may be approximately opposite or may be completely opposite. The horizontal flow direction refers to the flow along the horizontal line, and as shown in the vertical projection of the first bonding wire 305, the second bonding wire 306 and the third bonding wire 307 in fig. 5 in this embodiment, it can be seen that the flow direction of the first bonding wire 305 and the third bonding wire 307 is from left to right, and the flow direction of the second bonding wire 306 is from right to left, i.e. the first direction and the second direction are opposite.

In the above embodiment, the first amplifying branch and the second amplifying branch may amplify the radio frequency signal respectively, and in the combining network of the first amplifying branch, the first bonding wire, the second bonding wire and the third bonding wire are connected in series to meet the requirement of inductance in the combining network.

In one or more embodiments, the vertical length of the first bond wire 305 is greater than the vertical length of the second bond wire 306, while the vertical length of the third bond wire 307 is greater than the vertical length of the second bond wire 306. Wherein, the vertical length of the bonding wire refers to the length of the vertical projection of the bonding wire. Because the vertical length of the first bonding wire 305 is greater than that of the second bonding wire 306, the influence of electromagnetic induction of the second bonding wire 306 on a part of the line segment of the first bonding wire 305 can be reduced, and similarly, because the vertical length of the third bonding wire 307 is greater than that of the second bonding wire 306, the influence of electromagnetic induction of the second bonding wire 306 on the part of the line segment of the third bonding wire 306 can be reduced, the overall inductance loss can be reduced to a certain extent, and the efficiency of the radio frequency power amplifier can be improved.

In one or more embodiments, the rf power amplifying chip further includes a first metal sheet 301, a second metal sheet 302, and a third metal sheet 303, where the first metal sheet 301 may be connected to the first end of the first bonding wire 305, and the first metal sheet 301 is further connected to the output end of the first amplifying branch, that is, the first metal sheet 301 is connected to the first end of the first bonding wire 305 and the output end of the first amplifying branch, respectively. The second metal sheet 302 may be connected to the second end of the first bonding wire 305, and the second metal sheet 302 may also be connected to the first end of the second bonding wire 306, that is, the second metal sheet 302 is connected to the second end of the first bonding wire 305 and the first end of the second bonding wire 306, respectively. The third metal sheet 303 is connected to the second end of the second bonding wire 306, and the third metal sheet 303 is further connected to the first end of the third bonding wire 307, i.e. the third metal sheet 303 is connected to the second end of the second bonding wire 306 and the first end of the third bonding wire 307, respectively. The arrangement of the metal sheet can facilitate the adjustment of the size of the inductor and reduce the size of the radio frequency power amplification chip.

In one or more embodiments, at least two of the first metal sheet 301, the second metal sheet 302, and the third metal sheet 303 are located substantially in the same horizontal plane. That is, any two of the first metal sheet 301, the second metal sheet 302 and the third metal sheet 303 may be located at the same horizontal plane, or may be located at the same horizontal plane, thereby ensuring the compactness of the rf power amplifying chip and reducing the size of the rf power amplifying chip.

The first bonding wire 305, the second bonding wire 306, and the third bonding wire 307 are in different vertical planes. In one or more embodiments, as shown in fig. 5, the first bond wire 305 is located on one side of the third bond wire 307 and the second bond wire 306 is located on the other side of the third bond wire 307. In some embodiments, as further shown in fig. 6, fig. 6 is a schematic top view of the hybrid network of the present application. The third bond wire 307 is located on one side of the first bond wire 305 and the second bond wire 306 is located on the other side of the first bond wire 305. The radio frequency signal flows through the first bonding wire 305, the second bonding wire 306 and the third bonding wire 307 sequentially from the first metal sheet 301, so that the mutual inductance effect of the inductor can be utilized to improve the integral inductance value, the required inductance value can be obtained, the integral inductance loss can be reduced to a certain extent, and the efficiency of the radio frequency power amplifier can be improved.

In one or more embodiments, as shown in fig. 7, the bond wire 306 can have a bond height of 500-600 microns, i.e., the bond wire 306 has a bond height including, but not limited to, 510 microns, 515 microns, 520 microns, 525 microns, 530 microns, 535 microns, 540 microns, 545 microns, 550 microns, 555 microns, 560 microns, 565 microns, 570 microns, 575 microns, 580 microns, 585 microns, 590 microns, and 595 microns. The radio frequency signal horizontal flow directions of the second bonding wire 306 and the first bonding wire 305 and the third bonding wire 307 are different, and by reducing the bonding height of the second bonding wire 306 to 500-600 micrometers, the requirement on the inductance can be met, and the coupling area 308 between the second bonding wire 306 and the third bonding wire 307 and between the second bonding wire 305 can be reduced. In some embodiments, the bond wire 306 may have a bond height of 540 microns to 570 microns.

In order to realize the limitation of large inductance and RFIC packaging conditions, the bonding wire is wire-bonded with high radian at present, so that the mutual inductance coupling area of two adjacent bonding wires is relatively large, and the larger the coupling area is, the lower the inductance value is, and the larger the inductance loss is. By adding the second bonding wire and reducing the bonding height of the second bonding wire, the electromagnetic interaction generated by the radio frequency signals is weakened, so that the transmission loss of radio frequency energy can be reduced, and the efficiency of the radio frequency power amplifier is improved.

In one or more embodiments, as shown in fig. 5 and 6, the rf power amplifying chip further includes a fourth bonding wire 309. A first end of the fourth bond wire 309 may be connected to a second end of the third bond wire 307, and a second end of the fourth bond wire 309 may be used to connect to a combined impedance matching circuit of the radio frequency amplifier. In some embodiments. The rf power amplifying chip further comprises a fourth metal sheet 304, the fourth metal sheet 304 is connected to the second end of the third bonding wire 307, and the fourth metal sheet 304 is further connected to the first end of the fourth bonding wire 309, i.e. the fourth metal sheet 304 is connected to the second end of the third bonding wire 307 and the first end of the fourth bonding wire 309, respectively. The fourth bonding wire 309 is provided to more conveniently adjust the inductance requirement of the rf power amplifier, so as to meet different practical situations. The rf power amplifying chip may further include a fifth metal sheet 310, where the fifth metal sheet 310 is connected to the second end of the fourth bonding wire 309, and the fifth metal sheet 310 is further connected to a combined impedance matching circuit of the rf amplifier, that is, the fifth metal sheet 310 is connected to the second end of the fourth bonding wire 309 and the combined impedance matching circuit of the rf amplifier, respectively.

In some embodiments, the radio frequency power amplifying chip further includes a fifth bond wire (not shown) and a sixth bond wire (not shown). The first end of the fifth bonding wire is connected to the second end of the fourth bonding wire 309, the second end of the fifth bonding wire is connected to the first end of the sixth bonding wire, and the second end of the sixth bonding wire is used for connecting a combined impedance matching circuit of the radio frequency amplifier. That is, the fourth bonding wire 309, the fifth bonding wire and the sixth bonding wire are sequentially connected in series, and the fourth bonding wire 309, the fifth bonding wire and the sixth bonding wire may be adjacently disposed, and the horizontal flow direction of the radio frequency signal in the fourth bonding wire 309 and the sixth bonding wire is the third direction, and the horizontal flow direction of the radio frequency signal in the fifth bonding wire is the fourth direction, the third direction and the fourth direction. The fifth bonding wire and the sixth bonding wire can meet higher inductance requirements, the third direction and the fourth direction are opposite, the mutual inductance effect of the inductor can be utilized, the integral inductance value is improved, the required inductance value is obtained, the integral inductance loss can be reduced to a certain extent, and the efficiency of the radio frequency power amplifier is improved. For details, reference may be made to the descriptions of the first bonding wire 305, the second bonding wire 306 and the third bonding wire 307, which are not repeated here.

In one or more embodiments, the radio frequency power amplifying chip further includes a sixth metal sheet (not shown) and a seventh metal sheet (not shown). The first end of the fifth bonding wire is connected with the fifth metal sheet, the sixth metal sheet is connected with the second end of the fifth bonding wire, and the sixth metal sheet is also connected with the first end of the sixth bonding wire, namely the sixth metal sheet is respectively connected with the second end of the fifth bonding wire and the first end of the sixth bonding wire. The sixth metal sheet is connected to the second end of the sixth bonding wire, and the sixth metal sheet may also be connected to the combined impedance matching circuit, that is, the sixth bonding wire is connected to the combined impedance matching circuit through the sixth metal sheet. The different requirements for the inductance can be further fulfilled by adding fourth, fifth and/or sixth bonding wires.

The application also provides a radio frequency power amplifier (not shown) which comprises the radio frequency power amplifying chip and a combined impedance matching circuit, wherein the combined impedance matching circuit can be connected with the output end of the radio frequency power amplifying chip to carry out subsequent processing on radio frequency signals amplified by the radio frequency power amplifying chip. The radio frequency power amplifier can also comprise a power distributor, the power distributor is connected with the radio frequency output device, the power distributor is also respectively connected with a first amplifying branch and a second amplifying branch in the radio frequency power amplifying chip, and after the radio frequency output device outputs radio frequency signals, the radio frequency output device distributes the radio frequency signals to the first amplifying branch and the second amplifying branch.

As shown in fig. 8, fig. 8 is an experimental comparison diagram of the technical scheme of the present application and the prior art scheme. The first curve 401 is experimental data obtained in the prior art scheme, and the second curve 402 is experimental data obtained in the present application scheme. Under the same frequency, the larger the corresponding inductance Q value (the quality factor of the inductance is a parameter for measuring an inductance device) is, the smaller the loss of the inductance is, and the fact that the inductance Q value is larger than the corresponding result of the prior art when the frequency is smaller than 4Ghz can be seen by adopting the technical scheme of the application, so that the whole efficiency of the power amplifier of the radio frequency power amplifier is improved to a certain extent by using the technical scheme of the application.

The present application also provides a wireless signal transmission system (not shown) comprising the aforementioned radio frequency power amplifier, a radio frequency output device (not shown) and a signal transmission device (not shown). The radio frequency power amplifier is respectively connected with the radio frequency output device and the signal transmitting device, the radio frequency output device outputs radio frequency signals to the radio frequency power amplifier, the radio frequency power amplifier amplifies the received signals and then outputs the signals to the signal transmitting device, and the signal transmitting device transmits the signals to the user terminal.

In the description of the present application, it should be understood that the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", "a third", etc. may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless explicitly defined otherwise.

In the present application, unless explicitly specified and limited otherwise, the terms "coupled," "connected," and the like are to be construed broadly, and may be either a fixed connection or a removable connection, for example; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.

Claims (10)

1. The utility model provides a radio frequency power amplification chip for radio frequency power amplifier amplifies radio frequency signal, its characterized in that, radio frequency power amplification chip includes first amplification branch road and second amplification branch road, the input of second amplification branch road is used for receiving the radio frequency signal of radio frequency output device, the output of second amplification branch road is used for with the circuit connection of combining impedance matching of radio frequency power amplifier, the input of first amplification branch road is used for receiving the radio frequency signal of radio frequency output device, the output of first amplification branch road includes the network that combines, the network that combines includes:

the first end of the first bonding wire is connected with the output end of the first amplifying branch;

a second bond wire having a first end connected to a second end of the first bond wire;

a third bonding wire, the first end of which is connected with the second end of the second bonding wire, and the second end of which is used for being connected with the combined impedance matching circuit;

the horizontal flow direction of the radio frequency signal at the first bonding wire and the third bonding wire is a first direction, the horizontal flow direction of the radio frequency signal at the second bonding wire is a second direction, and the first direction and the second direction are different.

2. The radio frequency power amplifying chip according to claim 1, wherein the first direction and the second direction are opposite.

3. The radio frequency power amplifying chip according to claim 1, wherein a vertical length of the first bonding wire is greater than a vertical length of the second bonding wire; the vertical length of the bonding wire is the length of the vertical projection of the bonding wire;

and/or, the vertical length of the third bonding wire is greater than the vertical length of the second bonding wire; the vertical length of the bonding wire is the length of the vertical projection of the bonding wire.

4. The radio frequency power amplifying chip according to claim 1, wherein the radio frequency power amplifying chip further comprises:

the first metal sheet is respectively connected with the first end of the first bonding wire and the output end of the first amplifying branch;

the second metal sheet is respectively connected with the second end of the first bonding wire and the first end of the second bonding wire;

and the third metal sheet is respectively connected with the second end of the second bonding wire and the first end of the third bonding wire.

5. The rf power amplifying chip according to claim 4, wherein at least two of the first metal sheet, the second metal sheet and the third metal sheet are substantially in the same horizontal plane;

or, in the first metal sheet, the second metal sheet and the third metal sheet, at least two of them are located at the same horizontal plane;

or, the first metal sheet, the second metal sheet and the third metal sheet are on the same horizontal plane.

6. The rf power amplifying chip according to any one of claims 1 to 5, wherein the first bonding wire, the second bonding wire and the third bonding wire are in different vertical planes.

7. The radio frequency power amplifying chip according to claim 6, wherein the third bonding wire is located at one side of the first bonding wire, and the second bonding wire is located at the other side of the first bonding wire;

or, the first bonding wire is positioned at one side of the third bonding wire, and the second bonding wire is positioned at the other side of the third bonding wire.

8. The rf power amplifying chip according to any one of claims 1 to 5, wherein a bonding height of the second bonding wire is 500 μm to 600 μm;

or, the bonding height of the second bonding wire is 540 micrometers-570 micrometers.

9. The radio frequency power amplifying chip according to any one of claims 1 to 5, further comprising:

and the first end of the fourth bonding wire is connected with the second end of the third bonding wire, and the second end of the fourth bonding wire is used for being connected with the combined impedance matching circuit.

10. The radio frequency power amplifying chip according to claim 9, wherein the radio frequency power amplifying chip further comprises:

a fifth bonding wire, the first end of which is connected with the second end of the fourth bonding wire;

a sixth bonding wire, the first end of which is connected with the second end of the fifth bonding wire, and the second end of which is used for being connected with the combined impedance matching circuit;

the horizontal flow direction of the radio frequency signal at the fourth bonding wire and the sixth bonding wire is a third direction, the horizontal flow direction of the radio frequency signal at the fifth bonding wire is a fourth direction, and the third direction is opposite to the fourth direction.