CN117801499A - Low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film and preparation method thereof - Google Patents
Low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film and preparation method thereof Download PDFInfo
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- CN117801499A CN117801499A CN202311280163.5A CN202311280163A CN117801499A CN 117801499 A CN117801499 A CN 117801499A CN 202311280163 A CN202311280163 A CN 202311280163A CN 117801499 A CN117801499 A CN 117801499A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000000576 coating method Methods 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 14
- 238000003825 pressing Methods 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 238000010345 tape casting Methods 0.000 claims abstract description 8
- 239000013530 defoamer Substances 0.000 claims abstract description 6
- 238000013329 compounding Methods 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 239000002002 slurry Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000005098 hot rolling Methods 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 6
- 229920002635 polyurethane Polymers 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002518 antifoaming agent Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000004645 polyester resin Substances 0.000 claims description 2
- 229920001225 polyester resin Polymers 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 14
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 238000002834 transmittance Methods 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention relates to the technical field of heat conducting materials, in particular to a low-dielectric-constant high-heat-conductivity voltage-resistant heat conducting film and a preparation method thereof. The material comprises the following raw materials in parts by weight: 15-30 parts of organic resin, 50-80 parts of hexagonal boron nitride powder, 0.2-0.5 part of defoamer, 1-2 parts of flatting agent and 50-70 parts of solvent; the hexagonal boron nitride powder is obtained by compounding hexagonal boron nitride powder with different particle sizes. Coating the raw material on a carrier film by adopting a tape casting coating method, and curing under the condition of multiple temperature sections; and (5) pressing the cured heat conducting layer coil material by using a hot roll to obtain the heat conducting layer coil material. The heat conducting film has the characteristics of high heat conduction and heat conduction, low dielectric constant and high withstand voltage; the in-plane heat conductivity coefficient can reach 40-90W/m.k; the dielectric constant is 3.4-3.7; the breakdown voltage can reach more than 10kV/mm, the 2kg roller is not broken after being bent for 180 degrees, and the electromagnetic wave transmittance is more than 80%.
Description
Technical Field
The invention relates to the technical field of heat conducting materials, in particular to a low-dielectric-constant high-heat-conductivity voltage-resistant heat conducting film and a preparation method thereof.
Background
Very fine rugged gaps exist between the surface of the microelectronic material and the heat sink, and if they are directly mounted together, the actual contact area between them is only 10% of the area of the heat sink base, the remainder being the air gap. Because the air heat conductivity is only 0.024W/m.k, the air heat conductivity is a poor heat conductor, so that the contact thermal resistance between the electronic element and the radiator is very large, the heat conduction is seriously hindered, and finally the radiator has low efficiency. The gaps are filled with a thermal interface material with high thermal conductivity, air in the gaps is removed, an effective heat conduction channel is established between the electronic element and the radiator, and the thermal contact resistance can be greatly reduced, so that the effect of the radiator is fully exerted.
Nowadays, the 5G communication technology is more and more widely applied, and the high-frequency electromagnetic wave loss rate is higher, so that attenuation is easy to occur when the traditional heat conducting material is penetrated, and the product experience of a user is affected.
Currently, there is still a need for low dielectric thermal conductive films with high thermal conductivity and withstand voltage.
Disclosure of Invention
The invention mainly aims to provide a low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film and a preparation method thereof. The heat conducting film has the characteristics of high heat conduction and heat conduction, low dielectric constant and high withstand voltage; the in-plane heat conductivity coefficient can reach 40-90W/m.k; the dielectric constant is 3.4-3.7; the breakdown voltage can reach more than 10 kV/mm.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the invention provides a low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film, which comprises the following raw materials in parts by weight:
15-30 parts of organic resin, 50-80 parts of hexagonal boron nitride powder, 0.2-0.5 part of defoamer, 1-2 parts of flatting agent and 50-70 parts of solvent;
the hexagonal boron nitride powder is obtained by compounding hexagonal boron nitride powder with different particle sizes.
Further, the hexagonal boron nitride powder consists of hexagonal boron nitride powder with the particle size of 20-50 mu m and hexagonal boron nitride powder with the particle size of 1-10 mu m according to the mass ratio of 5-10:1.
The hexagonal boron nitride is an environment-friendly material, is nontoxic and free of pollution, has strong non-stick property in a high-temperature environment, and can prevent metal from corroding and adhering to tools. The heat conductivity coefficient can reach 200-400W/m.K due to the inherent anisotropic thermal property of the hexagonal boron nitride. Meanwhile, the size of the boron nitride crystal grains has an influence on the heat conductivity coefficient, the smaller the crystal grain size is, the more the number of crystal boundaries is, and the interface thermal resistance is increased, so that the heat conductivity coefficient is lower. After the single large-grain boron nitride powder is horizontally oriented, gaps among grains are larger, and an efficient heat conduction link cannot be constructed. Therefore, the method for compounding the hexagonal boron nitride powder into large and small particles, which takes the hexagonal boron nitride powder with large crystal grains of 20-50 mu m as a main body of the heat-conducting link, fills gaps among crystal grains after horizontal orientation by the hexagonal boron nitride powder with small crystal grains of 1-10 mu m, successfully constructs the efficient and dense heat-conducting link, and improves the heat conductivity coefficient of the film material.
A second aspect of the present invention provides a method for preparing the low dielectric constant high thermal conductivity voltage-resistant thermal conductive film according to the first aspect, the method comprising the steps of:
mixing organic resin, hexagonal boron nitride powder, an organic solvent, a defoaming agent and a leveling agent in proportion, and stirring for 15-25min at 800-1200 r/min to obtain heat-conducting slurry;
coating the heat-conducting slurry on a carrier film by adopting a tape casting coating method, wherein the coating speed is 3-3.5m/min, and the coating thickness is 0.06-0.30mm; curing at 80-100deg.C, 120-135 deg.C, 120-140 deg.C, 90-110 deg.C and 60-90 deg.C; and (5) pressing the cured heat conducting layer coil material by using a hot roll to obtain the heat conducting layer coil material.
Further, the hot roll pressing method is used as follows: the hot roll pressure is 2-3 Mpa, the temperature is 105-125 ℃, and the pressing speed is 2-3 m/min.
Compared with the prior art, the invention has the following advantages:
the heat conducting film is pressed by the hot roller to conduct high-level orientation of the heat conducting particles, so that the heat conducting coefficient of the film is higher and can reach 40-90W/m.k. Meanwhile, the heat conducting film has the characteristics of low dielectric constant and high withstand voltage, and the breakdown voltage can reach more than 10 kV/mm; in addition, the heat conducting film has excellent wave permeability, is soft and bendable, and can not break after being bent for 180 degrees by rolling for 2kg, and the electromagnetic wave transmittance is more than 80%.
Drawings
FIG. 1 is a schematic diagram of a casting coating process in a preparation method of a low dielectric constant high heat conduction voltage-resistant heat conduction film according to the invention;
fig. 2 is a schematic diagram of a horizontal orientation process in the preparation method of the low dielectric constant high heat conduction voltage-resistant heat conduction film.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present invention. As used herein, the singular forms also are intended to include the plural forms unless the context clearly indicates otherwise, and furthermore, it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, and/or combinations thereof.
The invention provides a low-dielectric-constant high-heat-conduction voltage-resistant heat-conduction film which comprises the following raw materials in parts by weight:
15-30 parts of organic resin, 50-80 parts of hexagonal boron nitride powder, 0.2-0.5 part of defoamer, 1-2 parts of flatting agent and 50-70 parts of solvent;
the hexagonal boron nitride powder is obtained by compounding hexagonal boron nitride powder with different particle sizes.
As a preferred embodiment of the invention, the hexagonal boron nitride powder consists of hexagonal boron nitride powder with the particle size of 20-50 mu m and hexagonal boron nitride powder with the particle size of 1-10 mu m according to the mass ratio of 5-10:1.
As a preferred embodiment of the invention, the solvent consists of absolute ethyl alcohol and deionized water according to the volume ratio of 8-15:1.
As a preferred embodiment of the present invention, the organic resin includes one or more of polyurethane, polyester resin, epoxy resin, acrylic resin, and phenolic resin.
As a preferred embodiment of the invention, the defoamer comprises one or more of S-105, BYK016, BYK057, AFE-1520 and 6036.
As a preferred embodiment of the invention, the leveling agent comprises one or more of BYK-320, LEVASLIP 411, FLOW-200, LD-9310 and EFKA-3030.
The invention provides a preparation method of the low-dielectric-constant high-heat-conductivity voltage-resistant heat-conducting film, which comprises the following steps:
mixing organic resin, hexagonal boron nitride powder, an organic solvent, a defoaming agent and a leveling agent in proportion, and stirring for 15-25min at 800-1200 r/min to obtain heat-conducting slurry;
coating the heat-conducting slurry on a carrier film by adopting a tape casting coating method, wherein the coating speed is 3-3.5m/min, and the coating thickness is 0.06-0.30mm; curing at 80-100deg.C, 120-135 deg.C, 120-140 deg.C, 90-110 deg.C and 60-90 deg.C; and (5) pressing the cured heat conducting layer coil material by using a hot roll to obtain the heat conducting layer coil material.
As a preferred embodiment of the present invention, a hot roll pressing method is used as follows: the hot roll pressure is 2-3 Mpa, the temperature is 105-125 ℃, and the pressing speed is 2-3 m/min.
As a preferred embodiment of the invention, each temperature zone is cured for 1-10 minutes.
In order to enable those skilled in the art to more clearly understand the technical scheme of the present invention, the technical scheme of the present invention will be described in detail with reference to specific embodiments.
Example 1
Mixing 15 parts of polyurethane, 50 parts of hexagonal boron nitride powder, 50 parts of solvent, 0160.2 parts of BYK-3201 parts, and stirring for 25min at 800r/min to obtain heat-conducting slurry; the obtained heat-conducting slurry is uniformly coated on a carrier PET release film through a tape casting coating process (shown in figure 1): the coating speed is 3m/min, the coating thickness is 0.06mm, and the curing is carried out at 80 ℃,120 ℃, 90 ℃ and 60 ℃ for 3min, 4min, 5min and 6min respectively; the cured heat conducting layer coil material is pressed by hot rolling, the pressure of the hot rolling is 2Mpa, the temperature is 110 ℃, and the pressing speed is 2m/min (shown in figure 2); the low dielectric constant high heat conduction voltage resistant heat conduction film is prepared.
The hexagonal boron nitride powder consists of hexagonal boron nitride powder with the particle size of 30 mu m and hexagonal boron nitride powder with the particle size of 5 mu m according to the mass ratio of 5:1.
The solvent consists of absolute ethyl alcohol and deionized water in a volume ratio of 8:1.
The heat conduction coefficient of the obtained low-dielectric constant high-heat conduction voltage-resistant heat conduction film is 45W/m.k, the thickness is 0.04mm, the breakdown voltage is 11kV/mm, the dielectric constant is 3.5, and after 180 DEG bending, 2kg of the film is rolled without breaking, and the electromagnetic wave transmittance is 85%.
Example 2
Mixing 20 parts of polyurethane, 60 parts of hexagonal boron nitride powder, 70 parts of solvent, 0.3 part of BYK-016 and 3201.5 parts of BYK-3201.5 parts, and stirring for 15min at 1000r/min to obtain heat-conducting slurry; the obtained heat-conducting slurry is uniformly coated on a carrier PET release film through a tape casting coating process (shown in figure 1): the coating speed is 3.5m/min, the coating thickness is 0.12mm, and the curing is carried out at 90 ℃,120 ℃, 130 ℃,100 ℃ and 80 ℃ for 3min, 4min, 5min and 6min respectively; the cured heat conducting layer coil material is pressed by hot rolling at the temperature of 120 ℃ under the pressure of 3Mpa at the pressing speed of 2.5m/min (shown in figure 2), so as to prepare the low-dielectric constant high-heat-conductivity voltage-resistant heat conducting film.
The hexagonal boron nitride powder consists of hexagonal boron nitride powder with the particle size of 30 mu m and hexagonal boron nitride powder with the particle size of 5 mu m according to the mass ratio of 6:1.
The solvent consists of absolute ethyl alcohol and deionized water in a volume ratio of 10:1.
The heat conduction coefficient of the obtained low-dielectric constant high-heat conduction voltage-resistant heat conduction film is 55W/m.k, the thickness is 0.08mm, the breakdown voltage is 12kV/mm, the dielectric constant is 3.6, and after 180 DEG bending, 2kg of the film is rolled without breaking, and the electromagnetic wave transmittance is 83%.
Example 3
Mixing 25 parts of polyurethane, 80 parts of hexagonal boron nitride powder, 70 parts of solvent, 0.4 part of BYK-016 and 3202 parts of BYK-3202 parts, and stirring for 20min at 1200r/min to obtain heat-conducting slurry; the obtained heat-conducting slurry is uniformly coated on a carrier PET release film through a tape casting coating process (shown in figure 1): the coating speed is 3.2m/min, the coating thickness is 0.15mm, and the curing is carried out at 90 ℃,120 ℃, 140 ℃, 110 ℃ and 90 ℃ for 4min, 3min and 5min respectively; the cured heat conducting layer coil material is pressed by hot rolling, the pressure of the hot rolling is 3Mpa, the temperature is 115 ℃, and the pressing speed is 2m/min (shown in figure 2); the low dielectric constant high heat conduction voltage resistant heat conduction film is prepared.
The hexagonal boron nitride powder consists of hexagonal boron nitride powder with the particle size of 30 mu m and hexagonal boron nitride powder with the particle size of 5 mu m according to the mass ratio of 7:1.
The solvent consists of absolute ethyl alcohol and deionized water in a volume ratio of 13:1.
The heat conduction coefficient of the obtained low-dielectric constant high-heat conduction voltage-resistant heat conduction film is 90W/m.k, the thickness is 0.12mm, the breakdown voltage is 11kV/mm, the dielectric constant is 3.7, and after the film is folded by 180 degrees, the film is not broken by rolling by 2kg, and the electromagnetic wave transmittance is 80%.
Example 4
Mixing 30 parts of polyurethane, 80 parts of hexagonal boron nitride powder, 70 parts of solvent, 0.5 part of BYK-016 and 3201.6 parts of BYK-3201.6 parts, and stirring for 23min at 950r/min to obtain heat-conducting slurry; the obtained heat-conducting slurry is uniformly coated on a carrier PET release film through a tape casting coating process (shown in figure 1): the coating speed is 3.5m/min, the coating thickness is 0.3mm, and the curing is carried out at the temperature of 95 ℃, 125 ℃, 130 ℃, 105 ℃ and 90 ℃ for 5min, 3min, 4min, 5min and 3min respectively; the cured coil of thermally conductive layer was pressed using a hot roll press having a pressure of 2.5Mpa and a temperature of 125 c at a pressing speed of 2m/min (as shown in fig. 2). The low dielectric constant high heat conduction voltage resistant heat conduction film is prepared.
The hexagonal boron nitride powder consists of hexagonal boron nitride powder with the particle size of 30 mu m and hexagonal boron nitride powder with the particle size of 5 mu m according to the mass ratio of 6.5:1.
The solvent consists of absolute ethyl alcohol and deionized water in a volume ratio of 15:1.
The heat conduction coefficient of the obtained low-dielectric constant high-heat conduction voltage-resistant heat conduction film is 80W/m.k, the thickness is 0.25mm, the breakdown voltage is 14kV/mm, the dielectric constant is 3.6, and after the film is folded by 180 degrees, the film is not broken by rolling by 2kg, and the electromagnetic wave transmittance is 83%.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (9)
1. The low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film is characterized by comprising the following raw materials in parts by weight:
15-30 parts of organic resin, 50-80 parts of hexagonal boron nitride powder, 0.2-0.5 part of defoamer, 1-2 parts of flatting agent and 50-70 parts of solvent;
the hexagonal boron nitride powder is obtained by compounding hexagonal boron nitride powder with different particle sizes.
2. The low-dielectric-constant high-heat-conduction voltage-resistant heat-conduction film according to claim 1, wherein the hexagonal boron nitride powder consists of hexagonal boron nitride powder with the particle size of 20-50 μm and hexagonal boron nitride powder with the particle size of 1-10 μm according to the mass ratio of 5-10:1.
3. The low-dielectric-constant high-heat-conduction voltage-resistant heat-conduction film according to claim 1, wherein the solvent is composed of absolute ethyl alcohol and deionized water in a volume ratio of 8-15:1.
4. The low dielectric constant high thermal conductive voltage resistant thermal conductive film according to claim 1, wherein the organic resin comprises one or more of polyurethane, polyester resin, epoxy resin, acrylic resin, phenolic resin.
5. The low dielectric constant high thermal conductive voltage resistant thermal conductive film according to claim 1, wherein said defoamer comprises one or more of S-105, BYK016, BYK057, AFE-1520, 6036.
6. The low dielectric constant, high thermal conductivity, voltage tolerant thermally conductive film according to claim 1, wherein said leveling agent comprises one or more of BYK-320, levalslip 411, FLOW-200, LD-9310, EFKA-3030.
7. The method for preparing the low dielectric constant high heat conduction voltage resistant heat conduction film according to any one of claims 1 to 6, which is characterized by comprising the following steps:
mixing organic resin, hexagonal boron nitride powder, an organic solvent, a defoaming agent and a leveling agent in proportion, and stirring for 15-25min at 800-1200 r/min to obtain heat-conducting slurry;
coating the heat-conducting slurry on a carrier film by adopting a tape casting coating method, wherein the coating speed is 3-3.5m/min, and the coating thickness is 0.06-0.30mm; curing at 80-100deg.C, 120-135 deg.C, 120-140 deg.C, 90-110 deg.C and 60-90 deg.C; the cured heat conducting layer coil stock is pressed by hot rolling; obtaining the product.
8. The method according to claim 7, wherein the hot roll pressing method is used as follows: the hot roll pressure is 2-3 Mpa, the temperature is 105-125 ℃, and the pressing speed is 2-3 m/min.
9. The method of claim 7, wherein each temperature zone is cured for 1-10 minutes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311280163.5A CN117801499A (en) | 2023-10-07 | 2023-10-07 | Low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311280163.5A CN117801499A (en) | 2023-10-07 | 2023-10-07 | Low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film and preparation method thereof |
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| CN202311280163.5A Pending CN117801499A (en) | 2023-10-07 | 2023-10-07 | Low-dielectric-constant high-heat-conduction voltage-resistant heat-conducting film and preparation method thereof |
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