CN117790356A - Hot air switching air duct, hot air system and semiconductor process equipment - Google Patents
Hot air switching air duct, hot air system and semiconductor process equipment Download PDFInfo
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- CN117790356A CN117790356A CN202211202082.9A CN202211202082A CN117790356A CN 117790356 A CN117790356 A CN 117790356A CN 202211202082 A CN202211202082 A CN 202211202082A CN 117790356 A CN117790356 A CN 117790356A
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000008569 process Effects 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 41
- 238000012546 transfer Methods 0.000 claims abstract description 33
- 238000012545 processing Methods 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 5
- 238000009529 body temperature measurement Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
Abstract
The invention relates to a hot air transfer air duct, a hot air system and semiconductor process equipment, wherein the hot air transfer air duct comprises a hot air input structure and/or a hot air output structure, the hot air input structure comprises an input structure main body and a first input channel and a second input channel which are arranged in the input structure main body, the inlets of the first input channel and the second input channel are arranged at one end of the input structure main body in parallel, the first input channel and the second input channel extend towards the other end of the input structure main body and are bent downwards, and the outlets are spaced at a certain distance and are positioned at the lower side of the input structure main body; the hot air output structure comprises an output structure main body and first to third output channels arranged in the output structure main body, inlets of the first output channel and the second output channel are located at the lower side of the output structure main body and at a certain distance, the first output channel and the second output channel extend upwards to be communicated with the third output channel, and an outlet of the third channel is arranged at one end of the output structure main body. The hot air transfer air duct provided by the invention heats the semiconductor process equipment by the hot air provided by the outside, so that the heating efficiency and the etching uniformity are improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a hot air transfer air duct, a hot air system and semiconductor process equipment.
Background
Currently, in processes such as dry etching or vapor deposition, the process gas is ionized into ions under the action of an electric field, and besides the influence of a magnetic field and an electric field on etching or deposition results, a temperature field is not negligible in the process. The main significance of controlling the temperature is two: on the one hand, by controlling the temperature, the chamber environment can be quickly brought into the environment required by the process, which shortens the time required for preparing the process and further improves the mass production efficiency. On the other hand, by controlling the temperature field, the uniformity of the plasma distribution in the process chamber can be improved, and the uniformity of the plasma etching or deposition on the wafer surface can be further improved.
In general, controlling the temperature of the inner walls and the lid of the process chamber is an important means of controlling the temperature field. Wherein the temperature of the process chamber may be achieved by monitoring and controlling the power of the heater. And the temperature control of the upper cover can be achieved in various forms. Initially, since the adjustment bracket is typically temperature controlled to a certain temperature, the upper cover may be heated by bringing the adjustment bracket into contact with the upper cover. Later, the heater apparatus was operated to control the temperature of the upper cover by winding a heating belt around the periphery of the upper cover. With the development of process technology, the requirement of the etching process on temperature field control is gradually increased, and the uniformity of the temperature of the upper cover is focused, so that the problem to be solved is urgent.
Disclosure of Invention
In order to overcome the problems in the prior art, the invention provides a hot air transfer air duct, a hot air system and semiconductor process equipment, which are used for overcoming the defects existing at present.
A hot air transfer duct for a hot air system of a semiconductor processing apparatus, the hot air transfer duct comprising a hot air input structure and/or a hot air output structure; wherein the method comprises the steps of
The hot air input structure includes:
an input structure body;
the first input channel is positioned in the input structure main body, an inlet of the first input channel is positioned at one end of the input structure main body, extends towards the other end of the input structure main body and bends downwards, and an outlet of the first input channel is positioned at the lower side of the input structure main body;
a second input channel located within the input structure body and below the first input channel, an inlet of the second input channel being located at the one end of the input structure body, extending toward the other end of the input structure body and bending downward, the second input channel extending toward the other end of the input structure body a distance less than a distance the first input channel extends toward the other end of the input structure body, and an outlet of the second input channel being located at a lower side of the input air duct body; and/or
The hot air output structure includes:
an output structure body;
the first output channel is positioned in the output structure main body, and an inlet of the first output channel is positioned at the lower side of the output structure main body and extends upwards;
the second output channel is positioned in the output structure main body, and an inlet of the second output channel is positioned at the lower side of the output structure main body and extends upwards;
the third output channel is positioned in the output structure main body and is communicated with the first output channel and the second output channel, an outlet of the third output channel is positioned at one end of the output structure main body, and the distance between an inlet of the first output channel and one end of the output structure main body is larger than the distance between an inlet of the second output channel and one end of the output structure main body.
Aspects and any one of the possible implementations as described above, further providing an implementation, further including:
the air quantity adjusting module is arranged at one end of the input structure main body and used for adjusting the air quantity input to the first input channel and/or the second input channel.
In the aspect and any possible implementation manner as described above, there is further provided an implementation manner, the air quantity adjusting module includes:
The plugboard fixing piece is arranged on the hot air input structure;
the plugboard is in sliding connection with the plugboard fixing piece so as to change the size of the inlet of the first input channel and/or the second input channel.
The invention also provides a hot air system for semiconductor process equipment, comprising:
at least one hot air supply module;
at least one pair of hot air switching air ducts according to the present invention, wherein an output port of the hot air supply module is connected to an inlet of the first input channel and an inlet of the second input channel of the hot air input structure, and an input port of the hot air supply module is connected to an outlet of the third input channel of the hot air output structure;
the first hot air ring is arranged below the hot air switching air duct and is respectively communicated with an outlet of the first input channel of the hot air input structure and an inlet of the first output channel of the hot air output structure;
the second hot air ring is arranged around the outer side of the first hot air ring and below the hot air switching air duct, and is respectively communicated with the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure.
In the aspect and any possible implementation manner, there is further provided an implementation manner, the hot air switching air channels are two pairs, and the two pairs of hot air switching air channels are oppositely arranged; the hot air supply modules are arranged in two, and the two hot air supply modules are arranged oppositely.
Aspects and any one of the possible implementations as described above, further providing an implementation, further including:
at least one first temperature sensor disposed on the first hot air ring;
at least one second temperature sensor disposed on the second hot air ring;
when the temperature of the first hot air ring is higher than that of the second hot air ring, reducing the inlet of the first input channel or expanding the inlet of the second input channel; or alternatively
When the temperature of the first hot air ring is lower than that of the second hot air ring, the inlet of the first input channel is enlarged or the inlet of the second input channel is reduced.
In the aspect and any possible implementation manner described above, there is further provided an implementation manner, in which the first hot air ring includes two first semicircular cavities, and an upper surface of each first semicircular cavity includes two first openings, and the two first openings are respectively communicated with an outlet of the first input channel of the hot air input structure and an inlet of the first output channel of the hot air output structure of the hot air switching duct;
The second hot air ring comprises two second semicircular annular cavities, the upper surface of each second semicircular annular cavity comprises two second openings, and the two second openings are respectively communicated with the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure of the hot air switching air duct; and is also provided with
The two first semicircular cavities and the two second semicircular cavities are symmetrically arranged.
In the aspect and any possible implementation manner as described above, there is further provided an implementation manner, where two first openings of the first semicircular cavity are respectively disposed at two ends of the first semicircular cavity;
the two second openings of the second semicircular cavity are respectively arranged at the two end parts of the second semicircular cavity.
In aspects and any possible implementation manner as described above, there is further provided an implementation manner, where the hot air supply module is a high temperature upper electrode module, and includes a heating wire and an air amplifier that are connected to each other, and the heating wire is disposed at an input port of the hot air supply module; the air amplifier is arranged at an output port of the hot air supply module.
The invention also provides a semiconductor process device, comprising:
the process chamber comprises a chamber main body and an upper cover;
the first coil group is arranged on the upper cover;
the second coil group is arranged on the upper cover and surrounds the outer side of the first coil group;
according to the hot air system, the first hot air ring and the second hot air ring of the hot air system are arranged on the upper cover, the first hot air ring is arranged between the first coil group and the second coil group, and the second hot air ring is arranged between the second coil group and the edge of the upper cover;
the coil bracket is arranged above the first coil group, the second coil group, the first hot air ring and the second hot air ring and is used for fixing the first coil group and the second coil group.
In the aspect and any possible implementation manner described above, there is further provided an implementation manner, at least four avoidance holes are provided on the coil support, and all first openings and second openings on the first hot air ring and the second hot air ring are disposed in the corresponding avoidance holes.
In aspects and any one of the possible implementations described above, there is further provided an implementation, the semiconductor process apparatus is a plasma process apparatus.
The beneficial effects of the invention are that
Compared with the prior art, the invention has the following beneficial effects:
the hot air switching air duct comprises a hot air input structure and a hot air output structure, wherein the air quantity of the hot air input structure and the hot air output structure can be adjusted; the hot air system comprises a hot air switching air duct, a hot air supply module, a first hot air ring, a second hot air ring and a temperature sensor, wherein the hot air system is adopted by the semiconductor process equipment, a double hot air ring structure is arranged between the first coil group, the second coil group and the edge of the upper cover, the contact area between hot air and the upper surface of the upper cover is increased by matching with the hot air switching air duct, the hot air input structure of the hot air switching air duct adopts a layered double-input air duct and a layered double-output air duct and the hot air output structure adopts a layered double-output air duct to ensure that the air quantity entering and flowing out of the first hot air ring and the second hot air ring are fixed and do not interfere with each other, the heating efficiency of the upper cover is improved to a certain extent, the preparation time of process conditions inside the etching machine chamber is shortened, the mass production efficiency is improved, and in addition, the temperature difference between the central part of the upper cover and the edge part of the upper cover is reduced by adjusting the air quantity of the hot air input structure, and the uniformity of a temperature field in the semiconductor process chamber is increased.
Drawings
FIG. 1 is a schematic diagram of a related art hot air system;
FIG. 2 is a schematic diagram of a related art two-hot air system;
FIG. 3 is a schematic view of a hot air input structure according to the present invention;
FIG. 4 is a schematic diagram of a hot air output structure according to the present invention;
FIG. 5 is a schematic view of the position of the air volume adjusting module according to the present invention;
fig. 6 is a schematic structural view of an air volume adjusting module according to the present invention;
FIG. 7 is a schematic diagram of a hot air system of a semiconductor processing apparatus of the present invention;
FIG. 8 is a schematic diagram of a quarter position adjustment according to the present invention;
FIG. 9 is a schematic illustration of three-eighths of a position adjustment according to the present invention;
FIG. 10 is a schematic illustration of an eighth position adjustment of the present invention;
FIG. 11 is a schematic view of the structure of the inner hot air ring of the present invention;
fig. 12 is a schematic view of a coil support structure according to the present invention.
Detailed Description
For a better understanding of the present invention, the present disclosure includes, but is not limited to, the following detailed description, and similar techniques and methods should be considered as falling within the scope of the present protection. In order to make the technical problems, technical solutions and advantages to be solved more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
It should be understood that the described embodiments of the invention are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
First, a hot air system involved in the related art will be described.
As shown in fig. 1, a related art technology adopts a hot air system to control the temperature of the upper cover of the process chamber of the semiconductor process equipment. The system comprises a hot air ring 2, an adapting air duct 3, a first high-temperature upper electrode module 6, a second high-temperature upper electrode module 7, an inner coil group 8, an outer coil group 9 and a thermocouple 10, wherein an upper cover 1 is a short cylindrical cover made of quartz or ceramic and used for a process chamber, and the upper cover 1, the inner coil group 8 and the outer coil group 9 belong to the same assembly, namely an upper cover assembly. Two high temperature upper electrode modules 6 and 7 are mounted outside the process chamber, both comprising heating wires and air amplifiers, respectively. Wherein the heating wire continuously heats the compressed air flowing through and contacting it, the compressed air coming from the plant. The air amplifier accelerates the flow rate of the heated compressed air, so that the heated compressed air circulates in the hot air ring to form hot air. Connected to the first and second high temperature upper electrode modules 6 and 7, respectively, is a switching air duct 3, and the switching air duct 3 transmits hot air into the hot air ring 2, and also can transmit the air in the hot air ring 2 back to the first and second high temperature upper electrode modules 6 and 7 for continuous heating. The hot air ring 2 is placed between the inner and outer coil groups 8 and 9 above the upper cover 1, and the hot air circulating in the hot air ring 2 transfers heat to the upper cover 1, thereby heating the upper cover 1. A thermocouple 10 is provided to measure the temperature of the upper cover in real time, and the measured temperature is used for the automatic control of the power of the heating wires in the first and second high temperature upper electrode modules 6 and 7 by the temperature controller. The temperature automatic control module (or parts such as a temperature controller) or the prior art, which are not described in detail in the present invention, the thermocouple 10 measures the area of the hot air ring 2. However, this technique has the following disadvantages: 1. the coil is an important component for determining the magnetic field distribution, so the number of turns and the placement position of the coil cannot be changed for mass-produced etched semiconductor process equipment. Due to the limitation of the number of coil turns and the position, the hot air ring 2 can only be placed between the inner and outer coil groups 8 and 9, so that the coverage area of the hot air ring 2 on the upper cover 1 is limited by the interval between the inner and outer coil groups 8 and 9, so that the contact area of the upper cover 1 and the hot air ring is limited, which results in low heating efficiency of the upper cover 1. 2. The heated area of the upper cover 1 is concentrated in the coverage area of the hot air ring 2, which inevitably results in that the temperature distribution of the upper cover 1 presents a gradient distribution of which the temperature of the coverage area of the hot air ring 2 is high and the temperature of the two sides of the hot air ring 2 is gradually low, and especially the adding effect of the edge of the upper cover 1 is relatively poor.
The second related art is to add a heating device to the outer ring of the upper cover 1 as shown in fig. 2 based on the first related art. The heating device comprises a heat homogenizing ring 4 and a heating belt 5, and the defects of low hot air heating efficiency and relatively poor heating effect of the edge of the upper cover in the prior art can be overcome by the arrangement, and the heat of the heating belt 5 is transferred to the cylindrical surface of the side of the upper cover 1 through the aluminum heat homogenizing ring 4, so that the edge of the upper cover 1 is heated. In general, the heating device performs temperature control of the upper cover 1 in cooperation with the first and second high temperature upper electrode modules 6 and 7, the switching duct 3, the hot air ring 2, and the thermocouple 10. At this time, the measured values of the thermocouple 10 can be used as the basis for controlling the power of the heating wires of the first and second high-temperature upper electrode modules 6 and 7 and the power of the heating belt 5. However, this technique has the following disadvantages: 1. the heat homogenizing ring 4 is made of aluminum material and is easy to deform after long-time work, and the deformation leads to insufficient heat transfer to the upper cover, so that the temperature distribution of the upper cover is uneven; 2. because the internal space of the machine is limited, the replacement or installation of the heating belt 5 has the risk of colliding with other parts in the semiconductor process chamber.
Embodiments of the present invention provide a hot air transfer duct for a hot air system of a semiconductor process device, as shown in fig. 3, 4 and 7, to illustrate specific structural components thereof, the hot air transfer duct including a hot air input structure 12 and a hot air output structure 19. In the present embodiment, the hot air transfer duct is used to supply hot air supplied from the outside to the semiconductor process equipment for heating, and more particularly, the hot air transfer duct is used to transfer hot air supplied from the hot air supply module such as the high temperature upper electrode module to the hot air ring such as for heating the upper cover of the process chamber of the semiconductor process equipment, wherein the hot air input structure 12 is used to introduce hot air from the hot air supply module, and the hot air output structure 19 is used to convey hot air back to the hot air supply module for circulation heating.
Further, the hot air input structure 12 includes:
an input structure body 31;
the first input channel 20 is located in the input structural body 31, the inlet of the first input channel 20 is located at one end of the input structural body 31, extends towards the other end of the input structural body 31 and bends downwards, and the outlet of the first input channel 20 is located at the lower side of the input structural body 31;
the second input channel 21 is located in the input structure body 31 and below the first input channel 20, the inlet of the second input channel 21 is located at the one end of the input structure body 31 and below the inlet of the first input channel 20, the inlet of the second input channel 21 extends towards the other end of the input structure body 31 and bends downwards, the distance that the second input channel 21 extends towards the other end of the input structure body 31 is smaller than the distance that the first input channel 20 extends towards the other end of the input structure body 31, and the outlet of the second input channel 21 is located at the lower side of the input structure body 31. In an alternative embodiment, the inlet of the second input channel 21 together with the inlet of the first input channel 20 constitutes the inlet 14 of the first input channel 20 and the second input channel 21.
Further, the hot air output structure 19 includes:
an output structure body 32;
a first output channel 33 located in the output structure body 32, wherein an inlet of the first output channel 33 is located at the lower side of the output structure body 32 and extends upwards;
a second output channel 34 located in the output structure body 32, wherein an inlet of the second output channel 34 is located at the lower side of the output structure body 32 and extends upwards;
the third output channel 15 is located in the output structural body 32 and is in communication with the first output channel 33 and the second output channel 34, the outlet of the third output channel 15 is located at one end of the output structural body 32, and the distance between the inlet of the first output channel 33 and the one end of the output structural body 32 is greater than the distance between the inlet of the second output channel 34 and the one end of the output structural body 32.
It will be appreciated by those skilled in the art that although in the example of fig. 3 and 4, the hot air input structure 12 has two input channels and the hot air output structure 19 has two output channels, the invention is not so limited, as long as the number of input channels and output channels is the same, and that more input channels and output channels are possible.
The inlets of the first and second input channels 20 and 21 of the hot air transfer channel of the embodiment of the present invention are adapted to communicate with the high temperature upper electrode module 6 to receive hot air provided by the high temperature upper electrode module 6 and to deliver the hot air into the first and second hot air rings. It will be appreciated by those skilled in the art that the number of hot air rings is not limited to two, as long as the number of hot air rings is the same as the number of input channels, output channels, and that more hot air rings are possible.
The hot air input structure 12 provides the received hot air to the first and second hot air loops through the outlet of the first input channel 20 and the outlet of the second input channel 21, and the inlet of the first output channel 33 and the inlet of the second output channel 34 of the hot air output structure 19 are adapted to communicate with openings on the first and second hot air loops to receive hot air flowing from the openings of the first hot air loop and the second hot air loop, the circulation process of which is described in detail in the later part of the invention.
As some alternative implementations of the embodiments of the present invention, as shown in fig. 5, an air volume adjusting module 22 is disposed at the inlet of the first input channel 20, for adjusting the air volumes output to the first input channel 20 and the second input channel 21 in the input structure body 31 of the hot air input structure 12. The invention provides an air quantity adjusting module, which aims to solve the defects of gradient distribution of temperature gradually lower at two sides of a hot air ring in the first related technology, and especially relatively poor heating effect of the edge of an upper cover. It should be understood by those skilled in the art that the air volume adjusting module 22 may be disposed at one end of the input structure body 31 to adjust the air volume input to the first input channel 20 and/or the second input channel 21, that is, the air volume adjusting module 22 may be disposed at the inlet of the first input channel 20, at the inlet of the second input channel 21, or at the inlets 14 of both the first input channel 20 and the second input channel 21, and may achieve the adjustment of the air volume input to the first input channel and the second input channel.
As shown in fig. 6, the air volume adjusting module of the present invention is implemented using a board adjusting structure including a board 25 and a board fixing member 26, the board fixing member 26 and a screw 27 fixing the board 25 on one side of the inlet of the first input channel 20, on one side of the inlet of the second input channel 21, on one side of the inlet 14 of both the first input channel 20 and the second input channel 21, for shielding the inlet of the first input channel 20, the inlet of the second input channel 21, or the inlet 14 of both the first input channel 20 and the second input channel 21, thereby changing the size of the inlet of the first input channel 20, the size of the inlet of the second input channel 21, or the size of the inlet 14 of both the first input channel 20 and the second input channel 21. The insert 25 is slidably connected with the insert fixing piece 26, so that the insert 25 can slide along the inlet of the first input channel 20 in a left-right pushing manner or in an up-down pushing manner, can slide along the inlet of the second input channel 21 in a left-right pushing manner or in an up-down pushing manner, can slide along the inlets 14 of both the first input channel 20 and the second input channel 21 in a left-right pushing manner or in an up-down pushing manner, and can move to any position of the inlet of the first input channel 20, can move to any position of the inlet of the second input channel 21, and can also move to any position of the inlet 14 of both the first input channel 20 and the second input channel 21 according to the requirement of temperature regulation. Taking the example that the board adjusting structure is fixed on one side surface of the inlet of the first input channel 20 for sliding left and right, the board 25 can move to the 1/8, 1/4 or 3/8 position of the inlet of the first input channel 20 left and right, thereby changing the size of the inlet of the first input channel 20, and then changing the opening area of the inlet of the first input channel 20, so as to achieve the purpose of adjusting the air quantity respectively output from the outlet of the first input channel 20 and/or the outlet of the second input channel 21 in the input structure main body 31. The insert plate 25 is inserted into the inlet of the first input channel 20 in the input structure main body 31 of the hot air input structure 12, and the size of the inlet of the first input channel 20 is changed by pulling and inserting left and right or up and down, so that the air volume of the hot air entering the first input channel 20 is amplified or reduced, and meanwhile, the total air volume of the hot air input structure 12 entering the hot air transfer duct is unchanged, so that the air volume entering the second input channel 21 is correspondingly reduced or amplified, and likewise, when the insert plate adjusting structure is fixed at the inlet of the second input channel 21 and the inlet 14 of both the first input channel 20 and the second input channel 21, the moving mode of the insert plate 25 is similar to the above mode and is not repeated. After the withdrawal stop position of the insert plate 25 is determined, the insert plate 25 is locked on the insert plate fixing member 26 by using the screw 27, and the screw 27 is connected with the insert plate 25 by adopting a threaded connection manner, or other connection manners can be adopted, so that the invention is not limited.
Another embodiment of the present invention provides a hot air system for a semiconductor process device, where the hot air system includes at least one pair of hot air switching air ducts described in the foregoing embodiments, and at least one hot air supply module; the output port of the hot air supply module is connected with the inlet of the first input channel and the inlet of the second input channel of the hot air input structure, namely, the inlet of the hot air supply module is connected with the inlet of the first input channel and the inlet of the second input channel, and the input port of the hot air supply module is connected with the outlet of the third input channel of the hot air output structure.
The first hot air ring 11 is an internal hot air ring and is arranged below the hot air transfer air duct, and the first hot air ring 11 is respectively communicated with an outlet of the first input channel of the hot air input structure and an inlet of the first output channel of the hot air output structure;
the second hot air ring 16 is an outer hot air ring, and is disposed around the outer side of the first hot air ring 11 and below the hot air transfer duct, and the second hot air ring 16 is respectively communicated with the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure.
As some optional implementations of the embodiments of the present invention, the two pairs of hot air transfer ducts in the present invention are disposed opposite to each other, as shown in fig. 7, the first pair of hot air transfer ducts includes a hot air input structure 12 and a hot air output structure 19, and the second pair of hot air transfer ducts includes a hot air input structure 12 'and a hot air output structure 19', where the structural compositions of the hot air input structure 12 'and the hot air output structure 19' are identical to the structural compositions of the hot air input structure 12 and the hot air output structure 19, respectively, and the present invention is not repeated. The two hot air supply modules are oppositely arranged and respectively comprise high-temperature upper electrode modules 6 and 7 with identical structures, and each hot air supply module and the hot air switching air duct are adjacently arranged, namely, the hot air supply module is arranged at one side of the hot air switching air duct far away from the first hot air ring 11 and the second hot air ring 16, and because hot air is supplied, the hot air supply module is arranged in a neighboring or adjacent relation with the hot air switching air duct, so that the temperature and the speed of hot air output by the hot air supply module are not influenced.
As some alternative implementations of the present embodiment, as shown in fig. 11, the first hot air ring 11 includes two symmetrically disposed first semicircular cavities, and the upper surface of each first semicircular cavity includes two first openings, where the two first openings are respectively disposed at two ends of each first semicircular cavity, and the four first openings may be, for example, circular through holes 24, 28, 29 and 30, respectively, where the through hole 24 at one end of one first semicircular cavity is connected to the outlet of the first input channel 20 of the hot air input structure 12 of the first hot air switching duct; the through hole 28 at the other end is connected with the inlet of the first output channel 33 'of the hot air output structure 19' of the second hot air transfer duct; a through hole 29 at one end of the other first semi-circular cavity is connected to the outlet of the first inlet channel 20 'of the second hot air inlet structure 12'; the through hole 30 at the other end is connected with the inlet of the first output channel 33 of the hot air output structure 19 of the first hot air transfer duct. Based on the same arrangement, the second hot air ring 16 of the present invention also includes two symmetrically arranged second semi-circular cavities, the upper surface of each second semi-circular cavity includes two second openings, the two second openings are respectively arranged at two ends of each second semi-circular cavity, the four second openings may be, for example, circular through holes respectively, wherein the first through hole at one end of one second semi-circular cavity is connected with the outlet of the second input channel 21 of the hot air input structure 12 of the first hot air transfer duct; the second through hole at the other end part is connected with the inlet of the second output channel 34 'of the hot air output structure 19' of the second hot air switching air duct; a third through hole at one end of the other second semi-circular cavity connects the outlet of said first inlet channel 21 'of said second said hot air inlet structure 12'; a fourth through hole at the other end is connected with the inlet of the second output channel 34 of the hot air output structure 19 of the first hot air switching air duct. The first hot air ring 11 and the second hot air ring 16 are respectively and symmetrically arranged in the form of two first semicircular cavities and two second semicircular cavities, are used as a hot air circulation runner, receive hot air from a hot air input structure through a first through hole and a fourth through hole on the hot air ring, flow in the two first semicircular cavities and the second semicircular cavities, and flow into inlets of a first output channel and a second output channel of a hot air output structure through a second through hole and a third through hole, so that circulation recovery of the hot air is realized. The through holes on the first hot air ring 11 and the second hot air ring 16 can flow in hot air and flow out hot air, and the positions of the through holes are determined specifically.
As some optional implementations of the embodiments of the present invention, the input port of the high-temperature upper electrode module 6 is connected to an external compressed air device, the output port is connected to the inlet 14 of both the first input channel 20 and the second input channel 21 of the hot air input structure 12 of the hot air transfer channel, the high-temperature upper electrode module 6 includes a heating wire and an air amplifier that are connected to each other, the heating wire is disposed at the input port of the high-temperature upper electrode module, and heats the compressed air flowing in the input port; the air amplifier is arranged at the output port of the high-temperature upper electrode module and used for amplifying and accelerating the flow rate of compressed air or hot air heated by the heating wire. The compressed air device is a plant CDA (compressed dry air), the compressed air sent by the plant CDA is heated by a heating wire in the high-temperature upper electrode module 6, then the flow speed is amplified and accelerated by an air amplifier, the heated and accelerated air circularly flows to form hot air, the hot air circularly flows into the hot air input structure, the first hot air ring 11, the second hot air ring 16 and the hot air output structure from the high-temperature upper electrode module 6 in turn, and finally flows back to the high-temperature upper electrode module 6, and the specific hot air circulation process is described in detail later.
As some optional implementations of the embodiments of the present invention, the present invention further includes at least one first and second temperature sensors, the first temperature sensor being disposed on the first hot air ring 11, specifically disposed at a position near the through hole of the first hot air ring 11; the second temperature sensor is arranged on the second hot air ring 16, and is specifically arranged at a position near the through hole of the second hot air ring 16; when the temperature of the first hot air ring 11 measured by the first temperature sensor is higher than the temperature of the second hot air ring 16 measured by the second temperature sensor, reducing the inlet size of the first input channel 20 of the hot air input structure 12 and/or expanding the inlet size of the second input channel 21 through the air quantity adjusting structure; or when the temperature of the first hot air ring 11 measured by the first temperature sensor is lower than the temperature of the second hot air ring 16 measured by the second temperature sensor, the inlet size of the first input channel 20 of the hot air input structure 12 is enlarged and/or the inlet size of the second input channel 21 is reduced by the air quantity adjusting structure.
As some alternative implementations of the embodiments of the present invention, the first and second temperature sensors are implemented by using thermocouples 10, at least four thermocouples are disposed on each hot air ring, and each thermocouple 10 is installed near each through hole on the first hot air ring 11 and the second hot air ring 16, and these thermocouples are used to measure temperatures at different disposed positions of the thermocouples of the first hot air ring 11 and the second hot air ring 16.
Another embodiment of the present invention also provides a semiconductor process apparatus, which may be a plasma process apparatus, further a plasma etching or deposition process apparatus, as shown in fig. 7 and 12, including a process chamber having an upper lid 1 and a chamber body; a first coil group 9 provided on the upper cover 1; a second coil group 8, which is also provided on the upper cover 1 and is provided around the outside of the first coil group 9; in the hot air system of the foregoing embodiment, the first hot air ring 11 and the second hot air ring 16 of the hot air system are both disposed on the upper cover 1, so as to heat the process chamber, for example, a plasma etching process, so that the process gas is ionized into ions under the action of an electric field in the dry etching process of the process chamber, forming plasma, and the high-energy plasma bombards the surface of the wafer, thereby obtaining the pattern required for preparing the integrated circuit. In the semiconductor processing apparatus of the embodiment of the present invention, the first hot air ring 11 is disposed between the first coil set 9 and the second coil set 8, and the second hot air ring 16 is disposed between the second coil set 8 and the edge of the upper cover; the coil support 23 is disposed above the first coil set 9 and the second coil set 8, and the first hot air ring 11 and the second hot air ring 16, and is used for fixing the first coil set 9 and the second coil set 8, where the first coil set 9 is an outer coil set, and the second coil set 8 is an inner coil set.
The semiconductor process equipment of the present invention may also include a plurality of coil sets, each of which may include a plurality of coils, wherein the plurality of coil sets and the hot air ring are disposed in a similar manner to those of the two coil sets of the present invention, and are within the scope of the present invention. The second hot air ring 16 replaces the heating device in the second related art, namely the heating belt 5 and the aluminum heat homogenizing ring 4, so as to avoid the disadvantage that the deformation of the aluminum heat homogenizing ring 4 in the related art causes frequent replacement of the whole heating device. Four avoidance holes are formed in the coil support 23 for fixedly supporting the first coil group 9 and the second coil group 8, four through holes in the first hot air ring 11 and the second hot air ring 16 are respectively embedded in the avoidance holes, so that the through holes are communicated with corresponding channels of hot air switching air channels, hot air flowing in and/or flowing out of the embedded through holes heats the upper surface of the upper cover 1, the two hot air switching air channels are symmetrically arranged on two sides of the coil support 23, and the outlet of the first input air channel 20 of the hot air input structure 12 of the first hot air switching air channel is communicated with the through hole 24 in the first hot air ring 11, and the outlet of the second input air channel 21 is communicated with the first through hole in the second hot air ring 16; an inlet of a first output channel 33' of the hot air output structure 19' of the second hot air switching air duct is communicated with the through hole 28 of the first hot air ring 11, and an inlet of a second output channel 34' is communicated with a second through hole of the second hot air ring 16; the outlet of the first input channel 20' of the hot air input structure 12' of the second hot air switching air duct is communicated with the through hole 29 of the first hot air ring 11, and the outlet of the second input channel 21' is communicated with the third through hole of the second hot air ring 16; the inlet of the first output air duct 33 of the hot air output structure 19 of the first hot air switching air duct is communicated with the through hole 30 on the first hot air ring 11, and the inlet of the second output air duct 34 is communicated with the fourth through hole on the second hot air ring 16. The hot air switching air channels and the high-temperature upper electrode modules which are symmetrically arranged on two sides of the upper surface of the upper cover can uniformly heat the upper cover 1, and the uniformity of heating of the upper surface of the upper cover 1 is ensured.
As some alternative implementations of the embodiment of the present invention, the present invention uses the first hot air ring 11 as an example to describe the circulation process of the hot air after the hot air system of the present invention is started to heat the upper cover 1. After receiving compressed air from a factory, an input port of the high-temperature upper electrode module 6 is internally provided with the heating wire for heating the compressed air; the air amplifier amplifies the flow velocity of the heated compressed air, the heated compressed air circularly flows to form hot air, the hot air is output from the output port of the high temperature upper electrode module 6 to the inlets 14 of the first input channel 20 and the second input channel 21 in the input structure main body 31 of the hot air input structure 12 of the hot air switching duct, the hot air flows into the through hole 24 at the right first semicircular cavity end of the first hot air ring 11 through the outlet of the first input channel 20 in the input structure main body 31, the hot air entering into the through hole 24 flows in the first semicircular cavity, the upper surface of the upper cover is heated in the flowing process, when the hot air flows to the other end along the path of the first semicircular cavity, the flowing hot air flows out through the through hole 28 at the end and enters into the hot air output structure 19' through the inlet of the first output channel 33' in the output structure main body 32 of the hot air output structure 19', and flows out through the outlet of the third output channel 18 thereof, the flowing hot air flows into the input port of the high temperature upper electrode module 7 connected with the outlet, the high temperature upper electrode module 7 heats and accelerates the received hot air and then outputs the hot air through the output port thereof, the outputted hot air enters through the inlets 17 of the first input channel 20' and the second input channel 21' of the hot air input structure 12' of the second hot air transfer duct, flows into the end through hole 29 of the other first semicircular cavity at the left side of the first hot air ring 11 again through the outlet of the first input channel 20', the hot air entering into the through hole 29 flows in the first semicircular cavity, the upper surface of the upper cover is heated in the flowing process, and when the hot air flows to the other end in the first semicircular cavity, the flowing hot air enters the hot air output structure 19 from the inlet of the first output channel 33 of the hot air output structure 19 through the through hole 30 at the end part and flows out through the outlet of the third output channel 15, the flowing hot air flows back into the input port of the high-temperature upper electrode module 6 connected with the outlet, and the high-temperature upper electrode module 6 heats and accelerates the received hot air again to form hot air, so that circulation is realized, the temperature and the speed of the flowing hot air in the first hot air ring 11 are ensured, the uniform heating of the area where the first hot air ring 11 is positioned on the upper surface of the upper cover is ensured, and the circulation principle of the hot air in the second hot air ring 16 is the same as that of the first hot air ring 11.
As some alternative implementations of the embodiment of the present invention, the total number of thermocouples 10 is at least 8, as shown in fig. 7, four holes for installing the thermocouples 10 are evenly distributed on each of the first hot air ring 11 and the second hot air ring 16, the thermocouples 10 are installed on the holes, and the adjustment of the movement amount of the insert plate 25 in the left-right or up-down direction is determined according to the temperatures measured by the eight thermocouples 10, that is, the air volume adjusting mechanism of the present invention needs to adjust the air volume of the hot air input structure by reading the temperatures measured by all the thermocouples 10 and matching. The specific operation mechanism will be described by taking the case of movement in the left-right direction: a hot air system is started on etching semiconductor process equipment, the moving amount of the plugboard 25 in the plugboard adjusting mechanism is determined by the temperatures of different areas of the upper cover surface read by eight thermocouples 10 fixed on the first hot air ring 11 and the second hot air ring 16, and the inlet area of the first input channel 20 of the hot air input structure 12 is manually adjusted by a dichotomy method according to temperature measurement data read from all the thermocouples 10 to adjust the heating effect. If the measured values of the temperature measurement readings of the four temperature measurement thermocouples 10 fixed on the first hot air ring 11 are higher than the measured values of the temperature measurement readings of the temperature measurement thermocouples 10 on the four second hot air rings 16, the insert plate 25 is required to block the quarter area position of the inlet of the first input channel 20, and the position of the insert plate 25 is shown in fig. 8, wherein the measured values can be the average value of the measured readings of the four thermocouples or the calculated values obtained by other operations; if the reading measurement value of the temperature thermocouple 10 at the first hot air ring 11 is still higher than the reading measurement value of the temperature thermocouple 10 at the second hot air ring 16, the insert plate 25 needs to be pushed inwards continuously by one eighth of the movement amount of the inlet of the whole first input channel 20, and the position of the insert plate 25 is shown in fig. 9, and the insert plate 25 blocks three-eighths of the area of the inlet of the first input channel 20; if the temperature measurement reading value of the temperature measurement thermocouple arranged on the first hot air ring 11 is lower than the temperature measurement reading value of the temperature measurement thermocouple arranged on the second hot air ring 16, the insert plate 25 needs to be pulled back out by one eighth of the movement amount of the whole inlet of the first input channel 20, the position of the insert plate 25 is shown in fig. 10, that is, the insert plate 25 is pulled back, the position of the inlet quarter area of the first input channel 20 is blocked again, the movement amount of the insert plate 25 on the inlet of the first input channel 20 of the hot air input structure 12 is adjusted according to the temperature measurement reading values of all thermocouples 10 on the first hot air ring 11 and the second hot air ring 16 until the upper surface temperature distribution of the upper cover 1 is relatively uniform, the position of the insert plate 25 at the moment is recorded, and the position of the insert plate 25 is fixed by adopting the screws 27 and the insert plate fixing pieces 26. It is noted that each conditioning operation is performed after the high temperature upper electrode modules 6 and 7 are stopped and the upper cover 1 is cooled to room temperature. After the position of the plugboard 25 is adjusted, the high-temperature upper electrode modules 6 and 7 are started, then the next temperature measurement operation is carried out, and the etcher can start working after the position of the plugboard 25 is fixed. In operation, the temperature of the upper surface of the upper cover can be monitored by the eight thermocouples 10 in real time, the average value of the temperatures read by the eight thermocouples is calculated and compared with the set temperature, and when the average value exceeds the set temperature, the etcher automatically adjusts to reduce the power of the heating wires in the high-temperature upper electrode modules 6 and 7; and when the average value is lower than the set temperature, the etcher automatically increases the power of the heating wires in the high-temperature upper electrode modules 6 and 7.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
While the foregoing description illustrates and describes the preferred embodiments of the present invention, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as limited to other embodiments, and is capable of numerous other combinations, modifications and environments and is capable of changes or modifications within the scope of the inventive concept as expressed herein, either as a result of the foregoing teachings or as a result of the knowledge or technology of the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (12)
1. The hot air transfer air duct is used for a hot air system of semiconductor process equipment and is characterized by comprising a hot air input structure and/or a hot air output structure; wherein the method comprises the steps of
The hot air input structure includes:
an input structure body;
The first input channel is positioned in the input structure main body, an inlet of the first input channel is positioned at one end of the input structure main body, extends towards the other end of the input structure main body and bends downwards, and an outlet of the first input channel is positioned at the lower side of the input structure main body;
a second input channel located within the input structure body and below the first input channel, an inlet of the second input channel being located at the one end of the input structure body, extending toward the other end of the input structure body and bending downward, the second input channel extending toward the other end of the input structure body a distance less than a distance the first input channel extends toward the other end of the input structure body, and an outlet of the second input channel being located at a lower side of the input air duct body; and/or
The hot air output structure includes:
an output structure body;
the first output channel is positioned in the output structure main body, and an inlet of the first output channel is positioned at the lower side of the output structure main body and extends upwards;
the second output channel is positioned in the output structure main body, and an inlet of the second output channel is positioned at the lower side of the output structure main body and extends upwards;
The third output channel is positioned in the output structure main body and is communicated with the first output channel and the second output channel, an outlet of the third output channel is positioned at one end of the output structure main body, and the distance between an inlet of the first output channel and one end of the output structure main body is larger than the distance between an inlet of the second output channel and one end of the output structure main body.
2. The hot air transfer duct of claim 1, further comprising:
the air quantity adjusting module is arranged at one end of the input structure main body and used for adjusting the air quantity input to the first input channel and/or the second input channel.
3. The hot air transfer duct of claim 2, wherein the air volume adjustment module comprises:
the plugboard fixing piece is arranged on the hot air input structure;
the plugboard is in sliding connection with the plugboard fixing piece so as to change the size of the inlet of the first input channel and/or the second input channel.
4. A hot air system for use in semiconductor processing equipment, comprising:
at least one hot air supply module;
The hot air transfer duct of any one of claims 1-3, an output port of the hot air supply module being connected to an inlet of the first input channel and an inlet of the second input channel of the hot air input structure, an input port of the hot air supply module being connected to an outlet of the third input channel of the hot air output structure;
the first hot air ring is arranged below the hot air switching air duct and is respectively communicated with an outlet of the first input channel of the hot air input structure and an inlet of the first output channel of the hot air output structure;
the second hot air ring is arranged around the outer side of the first hot air ring and below the hot air switching air duct, and is respectively communicated with the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure.
5. The hot air system according to claim 4, wherein the hot air transfer ducts are two pairs, and the two pairs of hot air transfer ducts are oppositely arranged; the hot air supply modules are arranged in two, and the two hot air supply modules are arranged oppositely.
6. The hot air system of claim 4, further comprising:
at least one first temperature sensor disposed on the first hot air ring;
at least one second temperature sensor disposed on the second hot air ring;
when the temperature of the first hot air ring is higher than that of the second hot air ring, reducing the inlet of the first input channel or expanding the inlet of the second input channel; or alternatively
When the temperature of the first hot air ring is lower than that of the second hot air ring, the inlet of the first input channel is enlarged or the inlet of the second input channel is reduced.
7. The hot air system of claim 5, wherein the first hot air ring comprises two first semi-circular cavities, an upper surface of each first semi-circular cavity comprising two first openings, the two first openings respectively communicating with an outlet of the first input channel of the hot air input structure of the hot air transfer duct, an inlet of the first output channel of the hot air output structure;
the second hot air ring comprises two second semicircular annular cavities, the upper surface of each second semicircular annular cavity comprises two second openings, and the two second openings are respectively communicated with the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure of the hot air switching air duct; and is also provided with
The two first semicircular cavities and the two second semicircular cavities are symmetrically arranged respectively.
8. The hot air system according to claim 7, wherein two of said first openings of said first semi-circular cavity are provided at two ends of said first semi-circular cavity, respectively;
the two second openings of the second semicircular cavity are respectively arranged at the two end parts of the second semicircular cavity.
9. The hot air system of claim 4, wherein the hot air supply module is a high temperature upper electrode module comprising a heating wire and an air amplifier connected to each other, the heating wire being disposed at an input port of the hot air supply module; the air amplifier is arranged at an output port of the hot air supply module.
10. A semiconductor processing apparatus, comprising:
the process chamber comprises a chamber main body and an upper cover;
the first coil group is arranged on the upper cover;
the second coil group is arranged on the upper cover and surrounds the outer side of the first coil group;
the hot air system of any one of claims 4-9, the first hot air loop and the second hot air loop of the hot air system being disposed on the upper cover, the first hot air loop being disposed between the first coil set and the second coil set, the second hot air loop being disposed between the second coil set and an edge of the upper cover;
The coil bracket is arranged above the first coil group, the second coil group, the first hot air ring and the second hot air ring and is used for fixing the first coil group and the second coil group.
11. The semiconductor processing apparatus of claim 10, wherein at least four relief holes are provided in the coil support, and all of the first and second openings in the first and second hot air rings are disposed in respective ones of the relief holes.
12. The semiconductor processing apparatus of claim 10, wherein the semiconductor processing apparatus is a plasma processing apparatus.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211202082.9A CN117790356A (en) | 2022-09-29 | 2022-09-29 | Hot air switching air duct, hot air system and semiconductor process equipment |
| PCT/CN2023/118422 WO2024067082A1 (en) | 2022-09-29 | 2023-09-13 | Hot air transfer duct, hot air system and semiconductor process device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211202082.9A CN117790356A (en) | 2022-09-29 | 2022-09-29 | Hot air switching air duct, hot air system and semiconductor process equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117790356A true CN117790356A (en) | 2024-03-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211202082.9A Pending CN117790356A (en) | 2022-09-29 | 2022-09-29 | Hot air switching air duct, hot air system and semiconductor process equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN117790356A (en) |
| WO (1) | WO2024067082A1 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9530656B2 (en) * | 2011-10-07 | 2016-12-27 | Lam Research Corporation | Temperature control in RF chamber with heater and air amplifier |
| CN105225983B (en) * | 2014-06-04 | 2018-04-06 | 北京北方华创微电子装备有限公司 | The heater of coupling window and apply its reaction chamber |
| CN112820616B (en) * | 2021-01-18 | 2024-04-12 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN115036240A (en) * | 2022-06-14 | 2022-09-09 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor processing equipment |
-
2022
- 2022-09-29 CN CN202211202082.9A patent/CN117790356A/en active Pending
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- 2023-09-13 WO PCT/CN2023/118422 patent/WO2024067082A1/en unknown
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| WO2024067082A1 (en) | 2024-04-04 |
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