CN117751446A

CN117751446A - Semiconductor package, electronic component, and electronic device

Info

Publication number: CN117751446A
Application number: CN202180100865.3A
Authority: CN
Inventors: 汤佳杰; 叶冠宏
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2021-09-23
Filing date: 2021-09-23
Publication date: 2024-03-22
Also published as: WO2023044651A1

Abstract

A semiconductor package, an electronic component, and an electronic device. The semiconductor package includes a substrate, a die, a heat sink, and a connector. The die is located between the substrate and the heat sink. The heat sink is connected with the substrate and has a through hole. The connecting piece comprises a first connecting part and a second connecting part. The first connecting part is connected with the substrate and extends into the through hole. The second connecting part is positioned at one side of the through hole away from the substrate and is connected with the first connecting part. The second connection portion covers the through hole. On one hand, the connecting piece plays a role of riveting so as to increase the connection strength of the radiating fin and the substrate; on the other hand, the contact area of the connecting member and the heat sink increases. Even if the heat sink and the substrate deform to cause stress on the interface, the contact area increases, so that the stress born by the connection surface of the heat sink and the substrate can be reduced, the connection strength of the heat sink and the substrate is enhanced, the heat sink and the substrate can be well connected, the quality of the semiconductor package is improved, and the service life of the electronic equipment is prolonged.

Description

Semiconductor package, electronic component, and electronic device

Technical Field

The present disclosure relates to semiconductor technology, and more particularly, to a semiconductor package, an electronic component, and an electronic device.

Background

Currently, semiconductor packages are typically packaged using Flip Chip Ball Grid Array (FC-BGA) packaging techniques. The packaged semiconductor package has advantages of miniaturization, multifunction, high speed, and the like, and thus is widely used in small electronic devices.

The semiconductor package comprises a substrate, a wafer and a heat sink, wherein the wafer and the heat sink are arranged on the substrate. A die refers to a die (die) from which a wafer is diced, the die having bond pads for packaging. Specifically, the chip is located between the heat sink and the substrate, and the chip is electrically connected to the substrate. The heat sink covers the die and is bonded to the substrate by a resin. However, since the materials of these components are different, their coefficients of thermal expansion are also different. When the components are assembled or used later, different stresses and deformations are generated on the components, so that the bonding between adjacent components is easy to fail, and the components are easy to fall off.

Disclosure of Invention

The application provides a semiconductor package, an electronic component and electronic equipment, so that a radiating fin and a substrate are well connected, the quality of the semiconductor package is improved, and the service life of the electronic equipment is prolonged.

In a first aspect, the present application provides a semiconductor package. The semiconductor package includes a substrate, a die, a heat sink, and a connector. Specifically, the wafer is disposed between the substrate and the heat sink. The heat sink may be connected to the substrate, and the heat sink has a through hole. The connecting piece comprises a first connecting part and a second connecting part connected with the first connecting part.

In the semiconductor package of the application, the first connecting part of the connecting piece is connected with the substrate and extends into the through hole of the radiating fin. The second connecting portion is arranged on one side, away from the substrate, of the through hole and covers the through hole, namely the size of the second connecting portion is larger than the aperture of the through hole. Therefore, on one hand, the connecting piece can play a role of riveting so as to increase the connection strength of the radiating fin and the substrate. On the other hand, the first connecting portion and the second connecting portion can increase the contact area of the connecting member and the heat sink. In this way, even if the radiating fin and the substrate are deformed differently to generate stress during subsequent processing, assembling or using, the contact surface can share the stress born by the connecting surface of the radiating fin and the substrate due to the increase of the contact area, and the connecting piece has better strength and can resist stronger stress under the riveting action of the connecting piece. Therefore, the semiconductor packaging piece with the structural design can prevent the connecting piece from separating from the radiating fin or the substrate, so that the radiating fin and the substrate can be well connected, the quality of the semiconductor packaging piece is improved, and the service life of the electronic equipment is prolonged.

In a specific technical scheme, the first connecting portion may be a first bonding block, and the second connecting portion may be a second bonding portion. The first bonding block is bonded with the second bonding block. The structural design can directly form the first connecting part and the second connecting part by adopting the adhesive, thereby simplifying the manufacturing flow of the semiconductor packaging piece and reducing the manufacturing cost.

An adhesive sheet may be provided between the heat sink and the substrate. The bonding sheet is used for bonding the radiating fin and the substrate so as to enhance the bonding strength between the radiating fin and the substrate. Specifically, the adhesive sheet may be made of an adhesive, so that the adhesive sheet and the first adhesive block may be in an integrally formed structure, so as to enhance the adhesive strength between the heat sink and the substrate without increasing the manufacturing process.

In other specific technical solutions, the first connecting portion may be a metal piece, and the second connecting portion may be a third adhesive block. And a bonding pad can be arranged on one side of the substrate close to the radiating fin, and the metal piece is connected with the bonding pad. In the technical scheme, the connection between the metal piece and the bonding pad can be specifically realized in a welding mode, or the metal piece can be directly formed by electroplating on the bonding pad of the substrate. The first connecting part is fixed on the bonding pad in a welding mode, and better connection strength can be provided at the connection part of the radiating fin and the substrate.

The specific type of the above-described metal member is not limited, and for example, the metal member may include a copper-nickel plated member or a stainless steel member.

In a specific technical scheme, an adhesive layer may be further disposed between the heat sink and the substrate. The adhesive layer is used for connecting the heat sink and the substrate. In this technical solution, since the substrate has a circuit electrically connected to the wafer, in order to avoid the pad from affecting the normal electrical connection between the wafer and the substrate, the adhesive layer may be disposed on a side of the connection member facing the wafer and spaced from the pad. On one hand, the bonding layer can enhance the connection strength between the radiating fin and the substrate; on the other hand, the adhesive layer may also separate the pads from the circuitry of the substrate.

The specific types of the first, second and third adhesive blocks described above are not limited. For example, the first adhesive mass may include a copper paste mass, a nano-silver paste mass, or a solder paste mass. The second adhesive block may include a copper paste block, a nano silver paste block, or a solder paste block. The third adhesive block may include a copper paste block, a nano silver paste block, or a solder paste block.

The second connecting portion may have a T-shaped structure. A part of the second connecting part extends into the through hole and is connected with the first connecting part. Because the connecting surface of the first connecting part and the second connecting part is positioned in the through hole, the stress on the connecting piece at the two side surfaces of the radiating fin can be reduced, and the connection has better strength.

The heat sink may have a plurality of through holes. The specific number of these through holes is not limited, and for example, the heat sink may have 1, 2, 4, 7, or 9 through holes. In addition, the specific arrangement of the through holes is not limited, and for example, the through holes may be equally spaced to make the connection more uniformly connect the heat sink and the substrate, so that the adhesion force applied to the heat sink and the substrate is more uniform.

In a second aspect, the present application provides an electronic assembly. The electronic assembly includes a circuit board and the semiconductor package of the first aspect. The semiconductor package is electrically connected to the circuit board.

The semiconductor package adopted by the electronic component is characterized in that the first connecting part of the connecting piece is connected with the substrate and extends into the through hole of the radiating fin. The second connecting portion is arranged on one side, away from the substrate, of the through hole and covers the through hole, namely the size of the second connecting portion is larger than the aperture of the through hole. Therefore, on one hand, the connecting piece can play a role of riveting so as to increase the connection strength of the radiating fin and the substrate. On the other hand, the first connecting portion and the second connecting portion can increase the contact area of the connecting member and the heat sink. In this way, even if the radiating fin and the substrate are deformed differently to generate stress during subsequent processing, assembling or using, the contact surface can share the stress born by the connecting surface of the radiating fin and the substrate due to the increase of the contact area, and the connecting piece has better strength and can resist stronger stress under the riveting action of the connecting piece. Therefore, the electronic component with the structural design can prevent the connecting piece in the semiconductor packaging piece from separating from the radiating fin or the substrate, so that the radiating fin and the substrate can be well connected, the quality of the semiconductor packaging piece is improved, and the service life of the electronic component is prolonged.

In a third aspect, the present application provides an electronic device. The electronic device comprises the electronic component of the second aspect. In the electronic component of the electronic device, the first connection portion of the connection member in the semiconductor package is connected with the substrate and extends into the through hole of the heat sink. The second connecting portion is arranged on one side, away from the substrate, of the through hole and covers the through hole, namely the size of the second connecting portion is larger than the aperture of the through hole. Therefore, on one hand, the connecting piece can play a role of riveting so as to increase the connection strength of the radiating fin and the substrate. On the other hand, the first connecting portion and the second connecting portion can increase the contact area of the connecting member and the heat sink. In this way, even if the radiating fin and the substrate are deformed differently to generate stress during subsequent processing, assembling or using, the contact surface can share the stress born by the connecting surface of the radiating fin and the substrate due to the increase of the contact area, and the connecting piece has better strength and can resist stronger stress under the riveting action of the connecting piece. Therefore, the electronic equipment with the structural design can prevent the connecting piece of the semiconductor packaging piece from separating from the radiating fin or the substrate, so that the radiating fin and the substrate can be well connected, the quality of the semiconductor packaging piece is improved, and the service life of the electronic equipment is prolonged.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor package according to an embodiment of the present application;

FIG. 2 is a schematic structural view of a connector according to an embodiment of the present application;

FIG. 3 is a schematic view of a structure of a flange according to an embodiment of the present application;

FIG. 4 is a schematic view of another structure of a flange according to an embodiment of the present disclosure;

FIG. 5 is a flow chart illustrating a method of fabricating a semiconductor package according to an embodiment of the present disclosure;

FIG. 6 is a schematic view of another structure of a connector according to an embodiment of the present application;

FIG. 7 is a schematic view of another structure of a connector according to an embodiment of the present application;

FIG. 8 is a flow chart illustrating another method of fabricating a semiconductor package according to an embodiment of the present disclosure;

FIG. 9 is a schematic view of another structure of a connector according to an embodiment of the present application;

FIG. 10 is a flow chart illustrating another method of fabricating a semiconductor package according to an embodiment of the present disclosure;

FIG. 11 is a schematic view of another structure of a connector according to an embodiment of the present application;

FIG. 12 is a schematic view of an electronic component according to an embodiment of the present disclosure;

FIG. 13 is a schematic view of another structure of an electronic component according to an embodiment of the present disclosure;

fig. 14 is a schematic structural diagram of an electronic device in an embodiment of the present application.

Reference numerals:

10-semiconductor packages; 11-a substrate;

12-wafer; 13-heat sink;

14-connecting piece; 15-an adhesive sheet;

16-terminals; 17-an adhesive layer;

20-an electronic component; 21-a circuit board;

30-an electronic device; 111-bonding pads;

131-through holes; 132—a ledge;

141-a first connection; 141 a-a first adhesive block;

141 b-a metal piece; 142-a second connection;

142 a-a second adhesive block; 142 b-third adhesive block.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail with reference to the accompanying drawings.

In the process of manufacturing a semiconductor package, a heat sink is generally directly bonded to a substrate using an adhesive resin. Specifically, the substrate is mainly made of resin, and the resin-made substrate is provided with metal lines or pads. The radiating fin is made of metal. However, since the thermal expansion coefficient of the metal and the thermal expansion coefficient of the resin are different, different stresses and deformations are generated in the heat sink and the substrate in subsequent processing and use, so that the adhesive resin is insufficient to keep the heat sink and the substrate bonded, resulting in detachment of the heat sink.

In addition, as the service life of the semiconductor package increases, the adhesive resin may age or be insufficiently tacky, which may also cause the heat sink to fall off, resulting in lower quality and service life of the semiconductor package.

Therefore, the application provides the semiconductor packaging part, the electronic component and the electronic equipment, so that the radiating fin and the substrate are well connected, the quality of the semiconductor packaging part is improved, and the service life of the electronic equipment is prolonged.

Fig. 1 is a schematic structural diagram of a semiconductor package according to an embodiment of the present application. As shown in fig. 1, the semiconductor package 10 includes a substrate 11, a die 12, a heat sink 13, and a connector 14. Specifically, the die 12 and the heat sink 13 are disposed on the same side of the substrate 11, and the die 12 is disposed between the substrate 11 and the heat sink 13. In other words, the heat sink 13 covers the die 12. Fig. 2 is a schematic structural view of a connector according to an embodiment of the present application. As shown in fig. 2, the heat sink 13 is provided with a through hole 131, and the connector 14 connects the heat sink 13 to the substrate 11 through the through hole 131. The connection member 14 includes a first connection portion 141 and a second connection portion 142 connected to the first connection portion 141.

With continued reference to fig. 2, the first connecting portion 141 of the connecting member 14 is connected to the substrate 11 and extends into the through hole 131 of the heat sink 13. The second connection portion 142 is disposed at a side of the through hole 131 facing away from the substrate 11, and covers the through hole 131. In other words, the second connection portion 142 has a size larger than the aperture of the through hole 131. Therefore, in the above-described semiconductor package 10, on the one hand, the connection member 14 may function as a rivet to increase the connection strength of the heat sink 13 and the substrate 11. On the other hand, the first and second connection portions 141 and 142 may increase the contact area of the connection member 14 and the heat sink 13. In this way, even if the heat sink 13 and the substrate 11 are deformed differently to generate stress during subsequent processing, assembling or using, the contact surface can share the stress born by the connection surface of the heat sink 13 and the substrate 11 due to the increase of the contact area, and the connection between the heat sink 13 and the substrate 11 has better strength and can resist stronger stress under the riveting action of the connecting piece 14. Therefore, the semiconductor package 10 with the structural design can prevent the connecting piece 14 from separating from the heat sink 13 or the substrate 11, so that the heat sink 13 and the substrate 11 can be well connected, the quality of the semiconductor package 10 can be improved, and the service life of the electronic equipment can be prolonged. In addition, the stress at the interface between the heat sink 13 and the substrate 11 may be greater, and the connection surface between the first connection portion 141 and the second connection portion 142 may be avoided, for example, the connection surface may be located in the through hole 131 or located on a side of the through hole 131 away from the substrate 11, so as to further increase the connection strength between the heat sink 13 and the substrate 11.

The specific types of the first and second connection parts 141 and 142 are not limited. For example, in some embodiments of the present application, the first connection portion 141 may be a first adhesive block 141a, and the second connection portion 142 may be a second adhesive block 142a. The first adhesive block 141a is adhered to the second adhesive block 142a. Specifically, the first and second adhesive blocks 141a and 142a may be made using an adhesive, such as a metal paste or a resin paste, etc., without being particularly limited thereto.

As shown in fig. 1, in an embodiment of the present application, the heat sink 13 may have a cap structure. Specifically, the heat sink 13 has a convex edge 132. The through hole 131 is disposed on the flange 132.

The specific number and arrangement of the above-described through holes 131 are not limited in the present application, and for example, the heat sink 13 may have 2, 4, 6, or 8 through holes 131. Fig. 3 is a schematic structural view of a flange according to an embodiment of the present application. In one particular embodiment, as shown in fig. 3, the heat sink 13 includes a flange 132, and the flange 132 has a rectangular frame shape. The four corners of the flange 132 are respectively provided with through holes 131. Fig. 4 is a schematic view of another structure of the flange in the embodiment of the present application. In another embodiment, as shown in fig. 4, the heat sink 13 includes a convex edge 132, and the convex edge 132 has a rectangular frame shape. Four through holes 131 are provided on each side of the flange 132, and the four through holes 131 may be equally spaced to more uniformly adhere the flange 132 to the substrate 11.

Fig. 5 is a flow chart of the manufacturing process of the semiconductor package according to the embodiment of the application. As shown in fig. 5, in a process of specifically manufacturing the semiconductor package 10, a first adhesive may be first disposed on the substrate 11, and then the heat sink 13 is bonded to the first adhesive, thereby implementing the bonding of the heat sink 13 to the substrate 11. During the bonding of the heat sink 13 with the first adhesive, a portion of the first adhesive may be pressed to protrude into the through hole 131, thereby forming the first adhesive into the first bonding block 141a. Thereafter, a second adhesive is provided on the side of the through hole 131 facing away from the substrate 11 to form a second adhesive block 142a.

Fig. 6 is a schematic view of another structure of the connector according to the embodiment of the present application. As shown in fig. 6, the second adhesive block 142a may have a T-shaped structure. That is, a portion of the second adhesive block 142a may protrude into the through hole 131 and be connected with the first adhesive block 141a. In this way, the first bonding block 141a and the second bonding block 142a can both form a T-shaped structure, and the connection part of the first bonding block 141a and the second bonding block 142a is located in the through hole 131, so that not only the bonding area between the heat sink 13 and the connecting piece 14 can be increased, but also the strength of the connecting piece 14 can be improved. When the heat sink 13 and the substrate 11 are deformed due to stress generated by the material itself, the first and second adhesive blocks 141a and 142a may function as rivets, maintaining the connection of the heat sink 13 and the substrate 11.

Fig. 7 is a schematic view of another structure of the connector according to the embodiment of the present application. As shown in fig. 7, in other embodiments of the present application, a portion of the first adhesive may also pass through the through hole 131 and extend out of the through hole 131, where the portion of the first adhesive extending out of the through hole 131 is adhered to the side of the through hole 131 facing away from the substrate 11 after being extruded, and covers the through hole 131, so as to form the second adhesive block 142a, where the first adhesive block 141a and the second adhesive block 142a are in an integral structure.

With continued reference to fig. 6 and 7, an adhesive sheet 15 may be further disposed between the heat sink 13 and the substrate 11. The adhesive sheet 15 is used to connect the heat sink 13 and the substrate 11 to enhance adhesion of the heat sink 13 to the substrate 11. Specifically, the semiconductor package 10 may include a plurality of adhesive pieces 15, and the adhesive pieces 15 may be positioned between the flange 123 and the substrate 11 and may be spaced around the wafer 12. Alternatively, the semiconductor package 10 may include an adhesive sheet 15 in a ring shape, the ring-shaped adhesive sheet 15 surrounding the wafer 12. In a specific embodiment, the adhesive sheet 15 may be spaced apart from the first adhesive block 141a to reduce the adhesive cost of the heat sink 13 and the substrate 11. The adhesive sheet 15 in this embodiment may be manufactured in synchronization with the first adhesive block 141a; alternatively, the first adhesive block 141a may be manufactured after the adhesive sheet 15 is manufactured; alternatively, the adhesive sheet 15 may be manufactured after the first adhesive block 141a is manufactured.

In another specific embodiment, the adhesive sheet 15 and the first adhesive block 141a may be integrally formed, so that the steps for manufacturing the semiconductor package 10 may be reduced. Fig. 8 is a flow chart illustrating another method of fabricating a semiconductor package according to an embodiment of the present application. As shown in fig. 8, in a process of specifically manufacturing the semiconductor package 10, a first adhesive may be first disposed on the substrate 11, and then the heat sink 13 is bonded to the first adhesive, thereby implementing the bonding of the heat sink 13 to the substrate 11. During the bonding of the heat sink 13 with the first adhesive, a portion of the first adhesive may be pressed to protrude into the through hole 131, thereby forming the first adhesive into a first bonding block 141a; another portion of the first adhesive remains between the heat sink 13 and the substrate 11 and is located on the side of the through hole 131 facing the wafer 12, forming an adhesive sheet 15. Thereafter, a second adhesive is provided on the side of the through hole 131 facing away from the substrate 11 to form a second adhesive block 142a.

Fig. 9 is a schematic view of another structure of the connector according to the embodiment of the present application. As shown in fig. 9, in other embodiments of the present application, the first connecting portion 141 may be a metal member 141b, and the second connecting portion 142 may be a third adhesive block 142b. The substrate 11 is provided with a pad 111 on a side close to the heat sink 13, and the metal member 141b is connected to the pad 111. The specific connection manner of the metal member 141b and the pad 111 is not limited. For example, in one particular embodiment, metal 141b may be soldered to pad 111; in another specific embodiment, the metal member 141b may be plated through the pad 111. The third adhesive block 142b may be made using an adhesive, such as a metal paste or a resin paste, etc., without being particularly limited in this application. In addition, the specific type of the metal member 141b is not limited, and may be, for example, a copper nickel plated member or a stainless steel member.

The first connection portion 141 may be a block made of solder paste, such as copper paste or tin paste, other than the metal member 141b, and the present application is not particularly limited.

Fig. 10 is a flow chart illustrating another method of fabricating a semiconductor package according to an embodiment of the present application. As shown in fig. 10, in the process of specifically manufacturing the semiconductor package 10, the pad 111 may be manufactured and molded simultaneously with the metal wiring of the substrate 11 at the time of manufacturing the substrate 11, and then the metal member 141b may be soldered to the pad 111, or the metal member 141b may be formed by electroplating the pad 11. After that, the heat sink 13 is provided on the substrate 11. In this process, the metal piece 141b protrudes into the through hole 131. Finally, an adhesive is disposed on the side of the through hole 131 facing away from the substrate 11, forming a third adhesive block 142b, and is connected to the metal member 141b. In this embodiment, the metal member 141b and the substrate 11 are firmly connected by welding, so that the connection strength at the interface between the heat sink 13 and the substrate 11 is better. The third adhesive block 142b adheres the metal member 141b to the heat sink 13, so that the metal member 141b is prevented from sliding out of the through hole 131 due to deformation of the heat sink 13 and the substrate 11, and the heat sink 13 and the substrate 11 are kept well connected.

Fig. 11 is a schematic view of another structure of the connector according to the embodiment of the present application. As shown in fig. 11, a side of the metal member 141b facing away from the pad 111 may be positioned in the through hole 131, and a portion of the third adhesive block 142b protrudes into the through hole 131 and is adhered to the metal member 141b. That is, the third adhesive block 142b may have a T-shaped structure. Alternatively, the end surface of the metal member 141b facing away from the pad 111 may be flush with the surface of the heat sink 13 facing away from the substrate 11, and the third adhesive block 142b covers the through hole 131 and the end surface of the metal member 141b facing away from the pad 111. In addition, a portion of the third adhesive block 142b may also fill the gap between the metal member 141b and the through hole 131, thereby increasing the adhesive area of the metal member 141b and the heat sink 13 to enhance the strength of the connection member 14.

With continued reference to fig. 1, the semiconductor package 10 may further include a terminal 16 disposed between the die 12 and the substrate 11, where the terminal 16 is used to electrically connect the die 12 to the substrate 11. In embodiments of the present application, the terminals 16 may be solder balls, solder paste, wires, or tabs.

As shown in fig. 11, the semiconductor package 10 of the above embodiment may further include an adhesive layer 17. The adhesive layer 17 may adhere the heat sink 13 and the substrate 11 to enhance the connection strength between the heat sink 13 and the substrate 11. In this embodiment, since the substrate 11 has a circuit electrically connected to the wafer 12, in order to avoid the above-mentioned pad 111 affecting the normal electrical connection between the wafer 12 and the substrate 11, an adhesive layer 17 may be provided on the side of the connection member 14 facing the wafer 12 and spaced apart from the pad 11, so that the pad 111 may be spaced apart from the circuit of the substrate 11. Specifically, the adhesive layer 17 may include a plurality of adhesive portions that are located at the flange 132 and the substrate 11, and may be spaced around the wafer 12. Alternatively, the adhesive layer 17 may have a ring shape.

Fig. 12 is a schematic structural diagram of an electronic component according to an embodiment of the present application. As shown in fig. 12, the present application also provides an electronic assembly 20. The electronic assembly 20 includes a circuit board 21 and the semiconductor package 10 of any of the embodiments described above. The semiconductor package 10 is electrically connected to the circuit board 21.

The specific number and arrangement of the above-described semiconductor packages 10 are not limited. Fig. 13 is a schematic view of another structure of an electronic component according to an embodiment of the present application. As shown in fig. 13, the electronic component 20 includes a circuit board 21 and four semiconductor packages 10. The four semiconductor packages 10 are arranged in an array on the circuit board 21. Alternatively, the semiconductor packages 10 are arranged in a straight line.

In the electronic component 20 of the present application, the first connection portion 141 of the connection member 14 in the semiconductor package 10 is connected to the substrate 11 and extends into the through hole 131 of the heat sink 13. The second connection portion 142 of the connection member 14 is disposed at a side of the through hole 131 facing away from the substrate 11, and covers the through hole 131. In other words, the second connection portion 142 has a size larger than the aperture of the through hole 131. Therefore, on the one hand, the connecting member 14 may function as a rivet to increase the connection strength of the heat sink 13 with the substrate 11. On the other hand, the first and second connection portions 141 and 142 may increase the contact area of the connection member 14 and the heat sink 13. In this way, during the subsequent processing, assembling or using of the electronic component 20, even if the heat sink 13 and the substrate 11 are deformed differently to generate stress, the contact surface can share the stress born by the connection surface of the heat sink 13 and the substrate 11 due to the increase of the connection contact area, and the connection between the heat sink 13 and the substrate 11 has better strength and can resist stronger stress under the riveting action of the connecting piece 14. Therefore, the electronic component 20 with the structural design can prevent the connecting piece 14 of the semiconductor package 10 from separating from the heat sink 13 or the substrate 11, so that the heat sink 13 and the substrate 11 can be well connected, thereby improving the quality of the semiconductor package 10 and prolonging the service life of the electronic component 20.

Fig. 14 is a schematic structural diagram of an electronic device in an embodiment of the present application. As shown in fig. 4, the present application also provides an electronic device 30. The electronic device 30 includes the electronic component 20 described above.

In this embodiment, the electronic device 30 adopts the semiconductor package 10, so that not only can the design of miniaturization, multifunction, high speed and the like be realized, but also the connection piece 14 of the semiconductor package 10 can ensure that the heat sink 13 and the substrate 11 have good connection, thereby improving the quality of the semiconductor package 10 and prolonging the service life of the electronic device 30.

The terminology used in the above embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the specification and the appended claims, the singular forms "a," "an," "the," and "the" are intended to include, for example, "one or more" such forms of expression, unless the context clearly indicates to the contrary.

Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in another embodiment," "in some embodiments," "in other embodiments," and the like in various places throughout this specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.

The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes or substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

A semiconductor package comprising a substrate, a die, a heat sink, and a connector, the die disposed between the substrate and the heat sink, wherein:

the radiating fin is connected with the substrate and is provided with a through hole;

the connecting piece comprises a first connecting part and a second connecting part, wherein the first connecting part is connected with the substrate and stretches into the through hole, the second connecting part is arranged on one side, deviating from the substrate, of the through hole and covers the through hole, and the first connecting part is connected with the second connecting part.
The semiconductor package according to claim 1, wherein the first connecting portion is a first adhesive block, the second connecting portion is a second adhesive block, and the first adhesive block is adhered to the second adhesive block.
The semiconductor package according to claim 2, wherein an adhesive sheet is provided between the heat sink and the substrate, the adhesive sheet being of an integral structure with the first adhesive block.
The semiconductor package according to claim 1, wherein the first connection portion is a metal member and the second connection portion is a third adhesive block;

and a bonding pad is arranged on one side of the substrate, which is close to the radiating fin, and the metal piece is connected with the bonding pad.
The semiconductor package of claim 4, wherein the metal member comprises a copper nickel plated member or a stainless steel member.
The semiconductor package according to claim 4 or 5, wherein an adhesive layer is provided between the heat sink and the substrate, the adhesive layer connects the heat sink and the substrate, and the adhesive layer is provided at a distance from the pad.
The semiconductor package of any one of claims 4 to 6, wherein the third adhesive pad comprises a copper paste pad, a nano-silver paste pad, or a solder paste pad.
The semiconductor package according to any one of claims 1 to 7, wherein the heat sink has a cap-shaped structure, the heat sink has a convex edge, and the through hole is provided in the convex edge.
The semiconductor package according to any one of claims 1 to 8, wherein the second connection portion has a T-shaped structure, and a portion of the second connection portion extends into the through hole and is connected to the first connection portion.
The semiconductor package according to any one of claims 1 to 9, wherein the heat sink has a plurality of through holes, the plurality of through holes being disposed at equidistant intervals.
An electronic assembly comprising a circuit board and the semiconductor package of any one of claims 1 to 10, the semiconductor package being electrically connected to the circuit board.
An electronic device comprising the electronic assembly of claim 11.