CN117727494A - Embedded micro-grid flexible transparent conductive electrode and preparation method thereof - Google Patents
Embedded micro-grid flexible transparent conductive electrode and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 63
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 63
- 238000005245 sintering Methods 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- -1 polydimethylsiloxane Polymers 0.000 claims description 19
- 238000003756 stirring Methods 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 10
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 9
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 9
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 9
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 11
- 238000002834 transmittance Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000007790 scraping Methods 0.000 abstract description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 abstract 5
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 abstract 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 abstract 5
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000005452 bending Methods 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002060 nanoflake Substances 0.000 description 1
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- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920006316 polyvinylpyrrolidine Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Abstract
The invention provides an embedded micro-grid flexible transparent conductive electrode and a preparation method thereof, and relates to the technical field of flexible devices. The method comprises the following steps: placing PDMS on the prepared silicon template through simple coating and vacuum bubble removal, and heating to cure the PDMS to obtain a PDMS substrate with a micro-channel pattern; preparing nano silver conductive ink; coating the prepared nano silver ink on the side of PDMS with the micro-channel, and scraping off superfluous metal conductive ink on the surface by using a scraper; performing ultrasonic auxiliary sintering on the PDMS substrate filled with the silver particle ink to sinter the conductive particle ink into a conductive circuit, so as to obtain the embedded micro-grid flexible transparent conductive electrode; the flexible transparent electrode manufactured by the method has the advantages that the conductive circuit is embedded in the flexible substrate to obtain independent conductivity and light transmittance, the conductive performance and the flexible performance are better, meanwhile, a compact sintered wire can be realized at a low temperature, the manufacturing method is low in cost, and the operation is simple.
Description
Technical Field
The invention relates to the technical field of flexible devices, in particular to an embedded micro-grid flexible transparent conductive electrode and a preparation method thereof.
Background
With the continuous development of wearable equipment for human body and the advent of implantable electronic devices, conventional rigid electronic devices cannot meet the ever-increasing complex needs of people. The flexible device exhibits good bending, stretching and torsion properties compared to rigid devices. Wherein the flexible transparent electrode serves as a core element of the flexible transparent device. Polyimide has the highest glass transition temperature in flexible plastic, and also has excellent thermal stability and good mechanical properties, and the excellent properties of polyimide make polyimide a preferred choice for substrate materials in the flexible electronic field. The transparent conductive electrode based on the polyimide substrate can be widely applied to the fields of photoelectric display and organic solar energy. The growing need for flexible transparent electrodes with better deformability, such as bending, stretching, etc., requires a series of processing techniques and new materials to be developed to solve this problem.
Transparent conductive electrodes (also simply referred to as transparent electrodes) are widely applied to the fields of photoelectric conversion, information display, solid illumination and the like based on the light transmittance of the transparent conductive electrodes, the existing transparent electrodes are mostly made of transparent conductive oxides (transparent conductive oxide, TCO), and the sheet resistance of the formed transparent electrodes is large due to relatively high resistivity of the TCO, particularly, the sheet resistance of the transparent electrodes can reach tens of ohms or even hundreds of ohms in a flexible substrate scene, so that the resistance of the transparent electrodes with large area can be greatly increased, and further, the problem of limited application of the transparent electrodes is caused.
The materials used for manufacturing the flexible transparent electrode in the market at present mainly comprise metal particles, metal wires, carbon nanotubes, conductive polymers and the like, but the materials generally have the problem that the conductive performance and the optical transmittance are mutually restricted. By embedding the conductive metal wires into the transparent substrate, the problem can be effectively solved, the embedded grid can be used for increasing the thickness of the electrode without increasing the duty ratio, and the flexibility is greatly improved under the condition of keeping the excellent light transmittance unchanged, so that the advantages of independently adjusting the conductivity and the light transmittance of the flexible transparent electrode are established.
Therefore, the invention designs an embedded micro-grid flexible transparent conductive electrode and a preparation method thereof.
Disclosure of Invention
The invention provides an embedded micro-grid flexible transparent conductive electrode and a preparation method thereof, and aims to solve the problems in the prior art.
In order to achieve the above object, the embodiments of the present invention provide an embedded micro-grid flexible transparent conductive electrode and a method for manufacturing the same, wherein the method comprises: firstly, polydimethylsiloxane (PDMS) is placed on a prepared silicon template through a simple coating process and a vacuum bubble removal process, the PDMS is heated to be solidified, then the PDMS with patterns is carefully peeled off from the Si template to obtain a PDMS substrate with micro-channel patterns, nano silver conductive ink is prepared in the second step, the prepared nano silver ink is fully coated on the side of the PDMS with micro-channels, superfluous metal conductive ink on the surface is scraped by a scraper, so that the ink is only filled at the channels, and in the fourth step, ultrasonic assisted sintering is carried out on the PDMS substrate filled with silver particle ink, so that the conductive particle ink is sintered into conductive lines, and an embedded micro-grid flexible transparent conductive electrode is obtained; the flexible transparent electrode manufactured by the method has the advantages that the conductive circuit is embedded in the flexible substrate to obtain independent conductivity and light transmittance, the conductive performance and the flexible performance are better, meanwhile, a compact sintered wire can be realized at a low temperature, the manufacturing method is low in cost, and the operation is simple.
The embodiment of the invention provides a preparation method of an embedded micro-grid flexible transparent conductive electrode, which comprises the following steps:
s1: respectively taking a Polydimethylsiloxane (PDMS) main agent and a Polydimethylsiloxane (PDMS) curing agent, placing the main agent and the PDMS curing agent into a beaker, and carrying out vacuum stirring to remove bubbles; pouring the solution on a substrate, and performing secondary vacuum stirring to remove bubbles; heating and curing to obtain a transparent Polydimethylsiloxane (PDMS) film;
s2: placing polyvinylpyrrolidone in absolute ethyl alcohol, stirring until the polyvinylpyrrolidone is completely dissolved, adding nano silver, and uniformly stirring to obtain nano silver conductive ink;
s3: the nano silver conductive ink is dripped on the side of a transparent Polydimethylsiloxane (PDMS) film and uniformly smeared on the surface of the film, redundant parts are scraped by a scraper, and a Polyimide (PI) film is placed on the transparent Polydimethylsiloxane (PDMS) film;
s4: placing the electrode on an ultrasonic auxiliary sintering table, performing ultrasonic treatment, heating, refilling nano silver conductive ink, and repeating sintering once to obtain the embedded micro grid flexible transparent conductive electrode.
Preferably, the amounts of Polydimethylsiloxane (PDMS) host and Polydimethylsiloxane (PDMS) curative in step S1 are 10g and 1g, respectively.
Preferably, in the step S1, the time for removing bubbles by vacuum stirring is 10min each time; the heating temperature is 100 ℃, and the curing time is 30min.
Preferably, the amounts of polyvinylpyrrolidone (PVP) and absolute ethanol in step S2 are 0.2g and 2.5g, respectively; the nano silver is selected from 2.8g of silver nano flake with the thickness of 100nm and the diameter of 1-3 mu m and 1.4g of silver nano particle with the diameter of 20 nm.
Preferably, stirring is performed for 30min in step S2.
Preferably, the temperature of the ultrasonic assisted sintering station in step S4 is 130 ℃, and a force of 100N is applied.
Preferably, the ultrasound parameters in step S4: the amplitude was 3 μm and the frequency was 4.5khz.
Preferably, the sintering temperature in the step S4 is 90-190 ℃ and the time is 5-60 min.
Preferably, the ultrasonic time in step S4 is 0 to 60S.
Based on an inventive general idea, the embodiment of the invention also provides the embedded micro-grid flexible transparent conductive electrode prepared by the preparation method.
PDMS (Polydimethylsiloxane) is generally composed of two main components, commonly referred to as agent a and agent B. These two components play different roles in the preparation of PDMS, with agent a comprising a silane monomer (siloxane monomers) and agent B comprising a cross-linking agent, typically a polysilane hydroxide containing siloxane units.
In the preparation of PDMS, the A agent and the B agent are mixed together according to a specific formula proportion.
That is, PDMS is a transparent elastomer material formed by fully mixing a macromolecular polydimethylsiloxane end active group with a curing agent and then heating and curing, and the electrode has excellent transparency and stretchability by using PDMS as a substrate, and can retain the microstructure pattern of a silicon template during curing, so that the electrode has the characteristics of flexibility and transparency. And silver nanoparticles have excellent conductive properties. Because the form of the nano particles can be freely adjusted, the conductive particle ink is prepared by selecting conductive particles with different forms and matching with a certain solvent and adhesive, and the PDMS channel can be further filled during sintering, so that a complete conductive circuit is obtained. Through the ultrasonic-assisted heating process, the conductive particle ink can be uniformly dispersed in the channel of the PDMS substrate, the particles are converted into an integral sintering circuit, the circuit is embedded into the PDMS substrate after the sintering is finished, and meanwhile, the sintering temperature is adjusted in the sintering process, so that the flexibility of the PDMS is not damaged, and the PDMS has independent conductivity and light transmittance.
The scheme of the invention has the following beneficial effects:
the scheme of the invention can rapidly and efficiently prepare the embedded micro-grid flexible transparent conductive electrode, and the process flow is simple.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method of manufacturing an embedded micro-grid flexible transparent conductive electrode according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a nano-silver conductive ink of the present invention;
FIG. 3 is a mirror image of PDMS filled with the nano-silver conductive ink according to the present invention;
FIG. 4 is a device physical diagram of an embedded micro-grid flexible transparent conductive electrode according to an embodiment of the invention;
FIG. 5 is a graph of the electrical conductivity of the electrode at different sintering temperatures for example 1 of the present invention;
FIG. 6 is a graph of the conductivity of electrodes at various sintering times for example 2 of the present invention;
FIG. 7 is a graph showing the influence of the ultrasonic introduction time on the electrical resistance of the single-cycle sintering in example 3 of the present invention;
FIG. 8 is a graph showing the bending property test of the film of example 4 of the present invention;
FIG. 9 is a chart of tensile properties of a film according to example 5 of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
Unless defined otherwise, all technical and scientific terms used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the scope of the present invention.
Unless otherwise specifically indicated, the various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or may be prepared by existing methods.
Aiming at the existing problems, the invention provides an embedded micro-grid flexible transparent conductive electrode and a preparation method thereof, wherein the flow diagram of the preparation method is shown in figure 1, and the main principle is that a PDMS substrate containing a microstructure is prepared by reversing a silicon template by PDMS, silver particle ink is scraped in the microstructure and is sintered in an ultrasonic auxiliary way; the preparation process comprises the following steps (as shown in figures 2-4):
(1) Preparation of transparent PDMS film with microstructure:
step 1: respectively taking 10g of transparent PDMS main agent and 1g of PDMS curing agent, placing in a beaker, and performing vacuum treatment by using a vacuum stirring and defoaming mode for 10min to fully remove large bubbles; pouring the mixture on a silicon substrate, and performing vacuum treatment for 10min to remove micro bubbles;
step 2: and then placing the film on a heating table, heating at 100 ℃ for 30min to enable the PDMS to be completely solidified, and carefully peeling the PDMS from the silicon substrate to obtain the transparent PDMS film with the microstructure.
(2) Preparation of nano silver conductive ink:
step 1: 0.2g of polyvinylpyrrolidone (K60 PVP) was placed in 2.5g of absolute ethanol and stirred for 30min, so that PVP was completely dissolved in ethanol;
step 2: 2.8g of silver nano-flakes with the thickness of 100nm and the diameter of 1-3 mu m and 1.4g of silver nano-particles with the diameter of 20nm are placed in a prepared ethanol solution, and uniformly stirred to obtain the nano-silver conductive ink, and an actual diagram is shown in figure 2.
(3) Conductive particle ink fill
Step 1: dripping the prepared nano silver conductive ink on the flexible film side with the microstructure by using a dropper, uniformly smearing the ink on the film surface by using a smearing rod, and then scraping the microstructure by using a scraper to remove the surplus part, wherein a physical diagram is shown in figure 3;
(4) Ultrasonic-assisted sintering conductive circuit
Step 1: placing a layer of polyimide film on the surface of the prepared PMDS substrate, placing the polyimide film on an ultrasonic-assisted sintering table and applying 100N force;
step 2: the method comprises the steps of applying 130 ℃ of temperature, simultaneously applying ultrasonic with the amplitude of 3 mu m and the frequency of 4.5khz, closing the ultrasonic after 20s of application, closing a heating table after 5min of heating, then refilling silver nano conductive particle ink, and repeatedly sintering for one time to obtain the embedded micro grid flexible transparent conductive electrode, wherein the physical diagram is shown in figure 4.
The following description will proceed with reference being made to specific embodiments
Example 1
The effect of different sintering temperatures on sheet resistance of the films was compared (fig. 5):
step 1: placing the PDMS substrate filled with the nano silver conductive ink on an ultrasonic auxiliary heating table for heating and sintering, and setting the temperature parameters to 90 ℃,10 min,100 ℃,10 min,130 ℃,10 min,160 ℃,10 min,190 ℃ and 10min respectively;
step 2: and comparing the sheet resistances of the electrodes at different sintering temperatures.
By analyzing the data obtained by the sheet resistance of the electrodes prepared at different heating times, it can be seen that the conductivity of the device became excellent with increasing sintering temperature, considering that too high a sintering temperature would vitrify PDMS, the optimum heating time was chosen to be 130 c in combination.
Example 2
The tensile properties of the electrodes at different sintering times were compared (fig. 6):
step 1: and (3) placing the PDMS substrate filled with the nano silver conductive ink on an ultrasonic auxiliary heating table for heating and sintering, wherein the time parameters are respectively set to 130 ℃, 5min,130 ℃,10 min,130 ℃,20 min,130 ℃,30 min,130 ℃ and 60min.
Step 2: the sheet resistances of the electrodes at different sintering times were compared.
By analyzing the data obtained by the sheet resistance of the electrodes prepared at different heating times, it can be seen that the conductivity of the device became excellent with increasing sintering time, considering that too long sintering time would deteriorate the stretchability of PDMS, the optimum heating time was selected comprehensively to be 10min.
Example 3
The effect of single-cycle sintering ultrasound introduction time on the electrical resistance was measured (fig. 7):
step 1: placing a PDMS film filled with nano silver conductive ink on an ultrasonic sintering table, covering a PI film on the surface of the PDMS film, and applying 100N pressure;
step 2: respectively setting the ultrasonic time to be 0s,10s,20s,30s and 60s and the heating time to be 5min;
step 3: filling the sintered film with nano silver conductive ink again and repeating the step two once;
step 4: the sheet resistance of the conductive film was measured and the data was analyzed.
As can be seen from fig. 7, the sheet resistance value of the film decreases and increases with the single-cycle sintering ultrasonic introduction time, so that the single-cycle introduction ultrasonic introduction time at the time of sintering is selected to be 20s.
Example 4
Bending properties of the films were tested (fig. 8):
step 1: attaching the ultrasonic sintered film conductive circuit side to a bottle with a bending radius of 13 mm;
step 2: bending the film for 0 times 100 times 200 times 300 times 400 times respectively, and measuring the square resistance value respectively;
step 3: attaching the ultrasonic sintered film PMDS substrate side to a bottle with a bending radius of 13 mm;
step 4: repeating the step 2;
step 5: testing the tensile characteristics of devices with different heating times;
as can be seen from the data of fig. 8, the electrode has a small rate of change in sheet resistance when bent over 500 times, and has excellent bending properties, both on the conductive trace side and on the PDMS substrate side.
Example 5
Film tensile properties were tested (fig. 9):
step 1: placing the ultrasonic sintered film conductive circuit side on a stretcher;
step 2: bending and stretching the film at 40% stretching for 5 times, 10 times, 15 times, 20 times, 25 times and 30 times respectively, and measuring square resistance values respectively;
as can be seen from the data of FIG. 9, the electrode has a small sheet resistance change rate at the time of stretching after 30 times of stretching, and has excellent stretching performance.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (10)
1. The preparation method of the embedded micro-grid flexible transparent conductive electrode is characterized by comprising the following steps of:
s1: respectively taking a polydimethylsiloxane main agent and a polydimethylsiloxane curing agent, placing the polydimethylsiloxane main agent and the polydimethylsiloxane curing agent in a beaker, and carrying out vacuum stirring to remove bubbles; pouring the mixture on a substrate, and performing secondary vacuum stirring to remove bubbles; heating and curing to obtain a transparent polydimethylsiloxane film;
s2: placing polyvinylpyrrolidone in absolute ethyl alcohol, stirring until the polyvinylpyrrolidone is completely dissolved, adding nano silver, and uniformly stirring to obtain nano silver conductive ink;
s3: the nano silver conductive ink is dripped on the side of the transparent polydimethylsiloxane film and is uniformly smeared on the surface of the film, the redundant part is scraped by a scraper, and a polyimide film is placed on the transparent polydimethylsiloxane film;
s4: placing the electrode on an ultrasonic auxiliary sintering table, performing ultrasonic treatment, heating, refilling nano silver conductive ink, and repeating sintering once to obtain the embedded micro grid flexible transparent conductive electrode.
2. The method for preparing an embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein the amounts of the polydimethylsiloxane main agent and the curing agent in the step S1 are 10g and 1g respectively.
3. The method for preparing the embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein the vacuum stirring and defoaming time in the step S1 is 10min each time; the heating temperature is 100 ℃, and the curing time is 30min.
4. The method for preparing the embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein the amount of polyvinylpyrrolidone and absolute ethyl alcohol in the step S2 is 0.2g and 2.5g respectively; the nano silver is selected from 2.8g nano silver and is selected from 2.8g silver nano flake with the thickness of 100nm and the diameter of 1-3 mu m and 1.4g silver nano particle with the diameter of 20 nm.
5. The method for preparing the embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein the stirring is performed for 30min in the step S2.
6. The method for manufacturing an embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein the temperature of the ultrasonic-assisted sintering table in step S4 is 130 ℃, and a force of 100N is applied.
7. The method for preparing the embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein in step S4, ultrasonic parameters are as follows: the amplitude was 3 μm and the frequency was 4.5khz.
8. The method for preparing the embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein the sintering temperature in the step S4 is 90-190 ℃ and the time is 5-60 min.
9. The method for preparing the embedded micro-grid flexible transparent conductive electrode according to claim 1, wherein the ultrasonic time in the step S4 is 0-60S.
10. An embedded micro-grid flexible transparent conductive electrode made by the method of any one of claims 1-9.
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