CN117673009A - 导电连接的金属柱 - Google Patents

导电连接的金属柱 Download PDF

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Publication number
CN117673009A
CN117673009A CN202311107048.8A CN202311107048A CN117673009A CN 117673009 A CN117673009 A CN 117673009A CN 202311107048 A CN202311107048 A CN 202311107048A CN 117673009 A CN117673009 A CN 117673009A
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CN
China
Prior art keywords
metal
connection
substrate
column
solder
Prior art date
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Pending
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CN202311107048.8A
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English (en)
Inventor
殷东珍
李炫奎
金庚泰
裵成文
朴恩光
金成泽
金振圭
秋龙喆
吴熙奉
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Duksan Hi Metal Co Ltd
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Duksan Hi Metal Co Ltd
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Publication date
Application filed by Duksan Hi Metal Co Ltd filed Critical Duksan Hi Metal Co Ltd
Publication of CN117673009A publication Critical patent/CN117673009A/zh
Pending legal-status Critical Current

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Abstract

本发明的一个方面提供了一种柱状形状的金属柱，通过切割金属线形成一个预定长度。该导电连接的金属柱的电导率在11至101％IACS之间，维氏硬度则在150至300HV之间。

Description

导电连接的金属柱
技术领域
本发明涉及导电连接的金属柱，更具体地说，涉及一种包含金属和焊料以实现电气连接和物理连接的连接柱。
背景技术
从来半导体装配中使用的连接材料，随着电极间距的减小，对新概念的连接材料开发提出了需求。作为柱状的连接材料，正在研究使用金属柱或具导电连接功能的金属柱上镀有焊锡层的导电连接柱以实现稳定的连接。
当使用金属柱或连接柱时，即使间距很狭窄，也能安全使用而不会出现短路的风险，并且由于金属柱或连接柱由导热性较高的金属制成，因此还具有将半导体产生的热量排出到基板的散热效应。
然而，至今对于传统的金属柱及其制造方法，以及镀焊锡层的导电连接柱及其制造方法，连接柱的运输方式，以及连接柱的连接方法等方面尚未进行具体研究，因此对于这些方面的开发工作非常迫切。
【先行技术文献】
【专利文献】
(专利文献1)韩国公示第10-2007-0101157号
发明内容
【想要解决的问题】
本发明的一个方面是希望提供能够最小化金属线切割时产生的毛边的金属柱及其制造方法作为目标。
本发明的其他方面旨在提供具有优异的电气传导度和热传导度，在高长宽比下也具有优秀的连接可靠性的连接柱以及该连接柱的制造方法。
本发明的其他方面旨在提供能有效地输送连接柱的连接柱输送支架以及连接柱的附着方法。
本发明的其他方面旨在提供一种使用外部传输的连接柱在半导体封装内稳定连接电极之间的电接触方法。
本发明的另一方面旨在提供一种双锡层连接柱，解决连接柱倾斜和缺失的问题。
【解决问题的手段】
根据本发明的一个方面，金属线的两端被切割成一定长度形成柱状的导电连接的金属柱，其特征在于：
该导电连接的金属柱的电导率在11至101％IACS之间，维氏硬度则在150至300HV之间。
还该导电连接的金属柱的直径范围为50至300μm，高度范围为60至3，000μm。
还该导电连接的金属柱的长径比(长度/直径)范围为1.2至5。
还该导电连接的金属柱的熔点范围为500至1000℃。
还该金属柱的拉伸强度为170至950MPa。
还导电连接的金属柱包含至少一种从Cu、Ag、Au、Pt和Pd组成的金属，作为其主要成分。
还该导电连接的金属柱至少含有0.1至20wt.％的由Sn、Fe、Zn、Mn、Ni、P组成的一种或多种元素。
还该导电连接的金属柱的热导性为50至450W/mK。
根据本发明的另一方面，一种导电连接的金属柱的制造方法，该方法包括：
主要金属熔液中加入添加元素熔化的熔融过程；
熔化过程后，通过轧制、压制或拉伸将熔体制成股线或薄片的绞线过程；
将绞线或薄片拉拔成线材的拉拔过程；
将拉拔后的线材进行热处理，温度范围为160至300度的热处理过程；以及
将线材切割成一定长度以制造金属柱的切割过程；
其中该金属柱的电导率在11至101％IACS之间，维氏硬度则在150至300HV之间。
【发明的效果】
根据本发明的一个方面，一种金属柱及其制造方法可在切割金属线时最大限度地减少毛刺的产生。此外，根据本发明的另一方面，连接柱及其制造方法具有优异的电气传导度和热传导度，并且在高纤维比率下具有出色的连接可靠性。相较于传统连接组件，焊锡层的体积减少，从而提高了连接柱的热传导能力，使其能够将产生的热量有效地散发到基板中，具有散热效果。
此发明的其他方面涉及连接柱的传输支架和连接柱的附着方法，可以有效地传送并安装连接柱，以实现高效率。
此发明的其他方面涉及电气连接方法，通过使用外部传输的连接柱，可以实现半导体封装内电极的稳定连接效果。此发明的其他方面涉及具有双层焊锡层的连接柱，提供稳定的连接可靠性。
附图说明
图1是连接柱的剖面图。
图2是根据本发明的不同实施方式所呈现的连接柱的不同形状的模式图。
图3a展示了用于上部基板和下部基板的连接柱的例子，图3b展示了用于芯片和下部基板的连接柱的例子，图3c展示了用于下部基板和PCB的连接柱的例子，图3d展示了用于大面积服务器向多芯片封装中连接上部基板和下部基板的连接柱，图3e展示了用于移动向多芯片封装中连接上部基板和下部基板的连接柱。
图4是连接柱传输支架的剖面图。
图5是使用连接柱传输支架将连接柱运输并连接到基板与基板之间的工序图。
图6是展示使用连接柱在第一块基板和第二块基板之间进行连接的工序图。
图7是具有双锡层的连接用焊锡层的剖面图。
图8是根据实施形式和比较例所拍摄的金属柱上的毛刺生成的电子显微镜照片。
图9是由不同合金成分制成的金属柱的电子显微照片。
具体实施方式
以下所描述的本创意概念具有多种变形可能性，可以具备多种实施形，通过示意图展示特定的实施形，并对其进行详细说明。然而，这并不意味着将本创意概念限制在特定的实施形上，应理解为包括在本创意概念技术范围内的所有变形，等效物或替代物。
以下使用的术语仅用于描述特定的实施例，并不意味着限定本创意概念的范围。除非在语境中明确指出不同的意思，单数表达包含了复数的含义。在下文中，“包括”或“具有”等术语是指在规范中所列出的特征、数字、阶段、操作、组件、部件、成分、材料或其组合的存在，并不预先排除其他特征、数字、阶段、操作、组件、部件、成分、材料或其组合的存在或可能性。
图式中为了清楚地表示多个层次和区域，对厚度进行了放大或缩小的展示。整份说明书中，对于相似的部分使用了相同的符号标记。
在整份说明书中，当谈到层、膜、区域、板等部分存在于其他不同部分的‘上方’或‘之上’时，这不仅仅指存在于其他部分正上方的情况，还包括存在于中间还可能有其他部分的情况。在整份说明书中，‘第1’、‘第2’等术语可以用于描述各种组成要素，但是组成要素不应该受到这些术语的限制。这些术语仅用于区分一个组成要素与其他组成要素之间的目的。
虽然第1、第2等术语可以用于描述各种元素、成分、区域、层次和/或地区，但应理解这些元素、成分、区域、层次和/或地区不应受这些术语的限制。
此外，本发明所描述的方法不一定必须按照顺序应用。例如，即使提及了第1步和第2步，并不意味着第1步必须在第2步之前执行，可以理解为不是必须按照顺序执行。在本说明书中，金属一词除了指金属元素外，通常还可以表示金属合金等金属类的总体含义。
<第1方面>
金属柱的制造过程通常是先将金属熔化，然后供应到连续铸造设备中进行硬化，形成绞线。然后将这些金属绞线进行成型(根据应用例子可能进行压延、压铸、拉拔等)，最终得到具有规定直径的铜线。
通常，铜线需要具有尽可能高的电导率，因此需要提供尽可能纯净的铜熔液，以尽量排除可能的添加元素。减少铜熔体中添加元素含量的方法是在铜熔体中设置适当的氧气含量，并使其中所含的添加元素凝固。由此形成的添加元素的氧化物可以去除，因为其中一些会以熔渣的形式浮到铜熔体的表面。
然而，由高纯度的铜熔液制造的铜线材在材料纯度提高的同时，会面临一个问题，即由于晶粒的增大，当切割铜线时会产生毛刺。毛刺可以定义为在切割面上残留一些未完全剪断的铜，这是使用刀片等切割铜线时的一个不完整的整齐度问题。
这种毛刺问题会使得在将铜线材剪断并用作连接柱用于半导体封装时，难以正确安装连接柱。因此，本发明的第一方面提供了金属柱和金属柱的制造方法。在本发明的实施例中，金属柱是由金属线剪断制成的柱状金属柱，具有特定的直径和高度。在本发明的实施例中，金属柱是用于电气连接基板与基板、基板与半导体芯片上的螺帽或电极的金属柱，其连接用金属柱的电气传导度需要具有高达11％至101％IACS的优异电导性。
为了具有上述所述的优异电导性，连接用金属柱至少包含一种由Cu、Ag、Au、Pt和Pd等主要成分组成的金属。此外，在本实施例中，连接用金属柱作为连接材料时，其热传导度应为50至450W/mK，更理想的是320至450W/mK。这是因为连接材料需要具有向基板传递热量的散热效应。
此外，本实施例的金属销最好具有160至300HV的维氏硬度。这是因为如果超过上述范围，就很难切割销钉，会出现断裂或弯曲的问题；如果低于上述范围，切割表面就会出现毛刺。
此外，由于金属柱是由金属线剪断而成，因此在切割面上不可避免地产生毛刺。在这种情况下，最理想的是毛刺的长度为0.1至0.5μm以下。
如果金属柱的毛刺尺寸大于一定大小，将无法在应用于半导体封装中需要使用的连接柱中实现焊锡层的镀覆，并无法发挥作为连接柱的功能。因此，通过使用具有上述范围内毛刺的金属柱，可以制造具有优异镀覆附着性、镀覆厚度均匀性和最小倾斜度的金属柱。
金属柱的直径范围为50至300μm，理想值为100至200μm，而高度范围为60至3，000μm，理想值为150至500μm，长宽比(长度/直径)为1.1至15，理想值为1.5至5。
特别地，在本发明中，由于使用金属线进行切割制造，因此能够制造适用于尺寸紧凑且具有较高基板间距的多芯片封装等的长宽比为3至5的金属柱。
金属柱的熔点最好为500至1，000℃。若超过该范围，将增加制造成本；若低于该范围，则可能在接合过程中出现熔化的问题。
金属柱的抗拉强度理想值为170至950兆帕。若超过该范围，可能会导致金属材料的供应缺陷；若低于该范围，则可能在金属柱的制造过程中出现形状变形的问题。
金属柱的一种实施形式是制造铜合金柱。铜合金柱是由以铜为主要成分的铜合金线材进行切割制造的柱状结构，具有特定的直径和高度，并且包含铜和至少一种添加元素。
纯度99.9％以上的纯铜柱具有非常高的电导率，其电导率为99至101％IACS。然而，仅使用纯铜制造铜柱时，由于纯铜具有较高的延展性，在切割过程中可能产生毛刺问题。为了解决这个问题，添加元素被引入。
换句话说，通过添加一定量的添加元素到铜中，在铜熔融时，可以使晶粒尺寸减小，从而改善材料的机械性能。因此，使用添加元素制造的铜合金线材具有更高的强度和硬度，使表面变得坚硬，可以最小化切割面的毛刺生成量。
添加元素主要选自Sn、Fe、Zn、Mn、Ni、P等组成的族群中，至少选择其中一种是理想的，且含量在0.1wt％至20wt％之间是理想的，更理想的是在5wt％至10wt％之间。若低于该范围，将产生过多的毛刺于切割面上若超过该范围，则将导致电导率下降的问题。
更理想的是，添加元素以约0.05wt％至20wt％的Sn含量(更理想的是2wt％至10wt％)进行混合，并以1：1至100：1的Sn和Zn比例(更理想的是1：1至10：1)进行混合。Sn具有提高强度和硬度的效果，而Zn则具有增加耐蚀性和耐磨性的效果，因此当它们以该范围的组合方式混合时，可以使毛刺的生成量最小化。此外，为了进一步提高耐蚀性和可靠性，添加元素还可以包括0.01wt％的Pd或0.01wt％至10wt％的Pt作为P的成分。
实施形的组成所制造的金属柱的维氏硬度应该具有150以上的高硬度，最理想的情况是具有150到300HV的硬度，更理想的情况是具有160到220HV的硬度。为了实现该硬度，需要进行以下所述的热处理是理想的。
以下是金属柱的制造过程的说明。金属柱的制造过程包括溶融过程、绞线过程、拉丝过程、热处理过程和切割过程。
溶融过程是将金属溶剂中添加特定组成的添加元素，进行熔化的过程。
绞线过程是熔化过程后，通过轧制、压制或拉伸将熔体制成股线或薄片。
拉丝过程是将绞线或薄片拉伸成具有特定直径的金属线的过程。
热处理过程是根据组成的不同进行热处理，以确保强度。热处理的适宜温度范围为160度至300度，通过热处理可以实现符合要求的维氏硬度介于150至300HV之间的硬度。如果超过该硬度范围，则可能变得过于坚硬，难以切割或容易断裂；如果低于该硬度范围，则可能产生较大的毛刺或增加毛刺的数量。
热处理之后，通过浸泡在酸中进行酸处理。这是为了去除金属柱表面由退火处理形成的氧化膜。
切割过程是将经过热处理的金属丝切割成指定长度的步骤。在此过程中，使用模切方法进行切割是理想的选择。模切方法利用压铸工艺，在压铸模具内***金属丝，并进行高速切割，从而制造金属柱。采用上述提到的相同组成的金属丝，在经过热处理后具有150至300HV的维氏硬度，使用模切方法进行切割时可以最小化毛刺的产生，同时实现经济高效的制造。
金属柱作为连接材料连接芯片和基板，在外部可以覆盖焊锡层进行使用。此外，可以在柱和基板的电极上涂布焊膏等，使其成为一种自身具备连接材料的选择，而无需形成外部焊锡层。
<第2方面>
本发明的第二方面涉及连接柱及其制造方法。图1显示了连接柱的剖面图。根据本发明，连接柱包括金属柱和焊锡层。
其中，金属柱采用了第一方面中所描述的金属柱，其毛刺长度为0.1μm至0.5μm，电气传导度为11至101％IACS，维氏硬度为150至300HV，并且具有50至450W/mK，更好地具备320至450W/mK的热导率。
关于金属柱，已在第一方面中进行了详细描述，为了保证发明的清晰性，将省略详细说明。金属柱应具有高热和电气传导度，这是理想的。
焊锡层至少覆盖在金属柱的外部区域。焊锡层在熔化过程中形成，用于连接柱的顶部和底部基板或芯片之间的连接。
由于焊料层是镀在金属柱上的因此它应具有良好的电镀性能。此外，由于连接柱与基板接触面积较小，相比传统焊球，连接柱在印刷电路板上进行的回流焊接过程中可能导致连接柱无法与电极或基板正常接触，大量出现失配(Missing)，严重影响工作效率。因此，连接柱需要提高焊接接头的耐热冲击性能和加速冲击性能，以满足高度可靠性的要求。本发明的一实施形根据环境污染的限制，禁止使用铅(Pb)，因此焊锡层采用具有与铅类似的物理特性的元素锡(Sn)作为基础，具有良好的导电性、延展性、耐蚀性和优秀的主成分组成。
然而，为了满足焊锡层所需的电镀性能、抗落击强度(Drop strength)、热循环特性(Thermal cycling，TC)和润湿性(Wet-ability)等特性，相对于仅采用锡(Sn)形成焊锡层，更好的做法是与其他金属进行合金化使用。
因此，本发明的焊锡层采用了Sn-Ag-Cu系合金，其中包含银(Ag)和铜(Cu)与锡(Sn)合金化，以实现高导电性和热导率。合金中含有银(Ag)、铜(Cu)以及残留的锡和一些不可避免的杂质，在回流焊之前能够良好地附着在铜合金柱上，在回流焊之后能够确保连接可靠性。
更具体地说，提供了含有1.5至4.0重量％银(Ag)、0.2至2.0重量％铜(Cu)以及残留的锡(Sn)和一些不可避免的杂质的焊锡合金，并且利用该合金制造的焊锡柱具有优秀的抗落击强度、热循环特性和润湿性，且失配率低。
焊锡层的每个组成元素进行详细检视。银(Ag)本身不具有毒性，可以增强合金的熔点，改善接合材料的湿润性，降低电阻，提高热循环(Thermal cycling，TC)特性和耐腐蚀性。
焊锡层中银(Ag)的含量在1.5至4.0重量％之间是理想的。如果银(Ag)含量低于1.5重量％，将难以确保焊锡层的电导率和热导率，并且会降低湿润性。如果银(Ag)含量超过4.0重量％，将在焊锡合金和焊锡层内部形成称为Ag3Sn的大块金属间化合物(BulkyIMC，过度生长的Bulky IMC会影响焊锡的抗冲击特性。理想的含量为2.2至3.2重量％，更理想的是3.0重量％。
铜(Cu)可以影响接合强度或拉伸强度，从而提高抗跌落冲击特性。焊锡层中铜(Cu)的含量为0.2至2.0重量％，如果铜(Cu)含量低于0.2重量％，将很难按需提高焊锡层的接合强度或拉伸强度如果含量超过2.0重量％，将导致焊锡固化，容易造成组织破裂并降低加工性能。理想的含量为0.2至1.0重量％，更理想的是0.5重量％。可选地，可以添加锌。如果焊锡层中含有0.1至0.7％的锌(Zn)，可以防止形成大块金属间化合物(Bulky IMC)，从而提高接合性能。
焊锡层应以金属柱直径的1/300至1/3厚度形成为理想。如果超过1/3，将在接合时产生倾斜的问题；如果低于1/300，将导致焊锡不足，无法实现良好
焊锡层的熔点理想范围为200至250℃。超过250℃会导致电子产品损坏，而低于200℃则可能在使用过程中引起重新熔化的问题。
焊锡层应至少在金属柱的某个区域形成，其形状不受限制。图2显示了根据不同的发明，
根据该图，连接柱可以根据用途仅在某一方向上形成焊锡层，或者在上部和下部形成焊锡层，或者沿上部和下部的方向形成焊锡层。焊锡层的热传导性应为50至80W/mK，这是理想的范围。然而，图2中并未显示扩散层，但根据后续描述，扩散层可以存在。此外，金属柱与焊锡层之间的存在扩散层是理想的。扩散层是一种镀层，用于防止金属柱中的金属合金原子与焊锡层中的锡或其他金属原子扩散，以形成金属间化合物。扩散层包括金属柱中的金属原子，在高温下扩散形成一个区域的固溶体。理想的例子是使用理想的例子是使用如果金属柱的主要金属是铜，其中晶体结构相同或相似且原子大小差异较小的镍是理想的选择。例如，可以使用镍(Ni)，Ni-Ag，Ni-P，Ni-B，Co等材料。
连接柱的电导率和热传导率可以通过扩散层的镀层来提高，理想的热传导率为50至100W/mK，这种情况下，Ni-Ag是一种理想的材料。连接柱的电导率和热传导率可以通过扩散层的镀层来提高，理想的热传导率为50至100W/mK，这种情况下，Ni-Ag是一种理想的材料。
下面介绍一种根据本发明制造连接柱的方法。连接柱的制造方法包括溶融过程、绞线过程、拉丝过程、热处理过程和切割过程和焊锡层形成过程。溶融过程是将金属溶剂中添加特定组成的添加元素，进行熔化的过程。
绞线过程是熔化过程后，通过轧制、压制或拉伸将熔体制成股线或薄片。
拉丝过程是将绞线或薄片拉伸成具有特定直径的金属线的过程。
热处理过程是根据组成的不同进行热处理，以确保强度。热处理的适宜温度范围为160度至300度，通过热处理可以实现符合要求的维氏硬度介于150至300HV之间的硬度。如果超过该硬度范围，则可能变得过于坚硬，难以切割或容易断裂；如果低于该硬度范围，则可能产生较大的毛刺或增加毛刺的数量。
切割过程是将经过热处理的金属丝切割成指定长度的步骤。在此过程中，使用模切方法进行切割是理想的选择。模切方法利用压铸工艺，在压铸模具内***金属丝，并进行高速切割，从而制造金属柱。采用上述提到的相同组成的金属丝，在经过热处理后具有150至300HV的维氏硬度，使用模切方法进行切割时可以最小化毛刺的产生，同时实现经济高效的制造。
焊锡层形成过程是在金属芯体表面沉积包含锡和其他金属的镀层的步骤。电镀是将金属芯体放入桶中，使其成为阳极，将欲镀的金属作为阳极放入桶中，然后通过将桶中的阴极连接到电源，以进行电镀。在此过程中，温度保持在20至30℃。电镀的时间取决于大小而定，需要适当的时间进行。
焊锡层的材料可以是包含锡的合金，例如SnAg、SnAgCu、SnCu、SnZn、SnM g、SnAl等。理想情况下，可以使用Sn-Ag-Cu合金，其中铜(Cu)的含量为0.2至2.0重量％。
如果铜(Cu)含量低于0.2重量％，将很难提高焊锡层的接合强度或拉伸强度，而超过2.0重量％则会导致焊料硬化并容易造成组织损伤，还可能降低可加工性。最理想的铜含量是0.2至1.0重量％，更好的选择是0.5重量％。银(Ag)含量应在1.5至4.0重量％之间。如果银(Ag)含量低于1.5重量％，将很难确保焊锡层具有足够的电导率和热导率，同时还可能降低润湿性。而超过4.0重量％时，焊料合金和焊锡层内部会形成体积较大的Ag3Sn互金属化合物(Bulky IMC)，这可能导致过度生长，进而影响焊料的抗冲击特性。在镀层工艺中，使用甲磺酸盐系列溶液是理想的选择。
预处理工艺包括去脂工艺，用于去除金属柱表面的有机物或污染物，以及酸洗过程，用于去除金属柱表面的氧化层。如果金属柱表面存在有机物、污染物或氧化层，会影响镀层的顺利形成，因此预处理过程是必要的。
扩散层形成过程是在预处理工过程直接在金属柱表面形成的非镀层，可防止铜垫片和金属柱表面的氧化以及由此产生的润湿不良，通过促使Cu6Sn5金属间化合物结合层转变为(Cu，Ni)6Sn5金属间化合物生成，从而提高接合强度，增加可靠性。形成在连接柱表面的扩散层的成分可以包括镍(Ni)、Ni-Ag、Ni-P、Ni-B、钴(Co)等，从热传导性考虑，Ni-Ag是理想选择。扩散层通常可以通过广为人知的电镀方法形成。如果使用无电镀方法形成扩散层，可能会涉及厚度和可靠性方面的问题。
焊锡层的厚度根据金属柱的直径而定，理想的厚度范围是1至10μm，更理想的是1至7μm、1至5μm或1至3μm。如果焊锡层超出了上述范围，可能会导致接合时倾斜、焊锡量过多形成桥接，以及导致热传导性变差的问题。如果焊锡层的厚度低于上述范围，可能会导致焊锡不足，无法实现良好的接合。
扩散层的厚度最理想的范围是0至5μm。也就是说，扩散层可以选择性地包含在内，但包含扩散层是理想的。如果包含扩散层，则可以通过电镀的方法形成1至5μm或1至3μm的厚度。扩散层的厚度应较焊锡层小。如果超出了上述范围，可能会导致铜垫片、金属柱和焊锡之间的接合层在热源作用下(包括150℃周围温度)产生柯肯德尔空洞(Kirkendallvoids)，从而导致初期裂纹的产生风险。此外，长时间的热处理或热循环/热冲击暴露可能导致铜的消耗。
使用无电镀方法将扩散层形成厚度为0.1至1μm的层是可能的，但根据条件不同，可能会通过柯肯德尔空洞(Kirkendall voids)的生成产生初期裂纹的风险，并且在长时间的热处理或热循环/热冲击暴露下可能会导致铜的消耗。
此外，金属柱的热导率最好为50至450W/mK，更优选为320至450W/mK，焊料层的热导率最好为50至80W/mK，扩散层的热导率最好为50至100W/mK。特别是，由于连接柱的传热横截面积小而传热厚度大，因此最好将导热系数低的焊料层的厚度保持得尽可能薄，以保持整个连接柱的高导热系数。
<第3方面>连接柱传输支架
根据本发明，连接柱可以应用于半导体封装的各种用途。图3a展示了连接柱用于连接上基板和下基板的示例，图3b展示了连接柱用于连接芯片和下基板的示例，图3c展示了连接柱用于连接下基板和PCB的示例，图3d展示了连接柱用于连接大面积服务器多芯片封装中的上基板和下基板的示例，图3e展示了连接柱用于连接移动设备多芯片封装中的上基板和下基板的示例。
换句话说，根据本发明，连接柱不仅可以作为电连接材料来取代传统的焊球或焊盘，而且还可以在大面积服务器多芯片封装或移动设备多芯片封装等情况下，由于第1基板和第2基板之间的距离过大无法使用焊球进行连接，因此采用高纵横比的连接柱进行连接。
根据本发明，各种用途的连接柱不是在印制板上层叠形成，而是在外部制造后进行传输。因此，制造的柱状引脚需要在封装过程中准确地传输并安装到指定位置。
为此，本发明的第三方提供了连接柱传输支架。图4显示了连接柱-传输支架的剖面图。根据图示，连接柱传输支架包括连接柱、传输基板、粘合基材。
连接柱根据本发明的第二方面，是带有焊锡层的金属柱的柱状形状。连接柱被***传输基板上形成的贯穿孔中并进行对齐。特别是本发明的连接柱适宜使用具有3至10的高宽比。
传输基板是一种基板，具有排列整齐的通孔，这些通孔用于将引脚定位在封装上需要定位的位置，传输基板具有预定的厚度，以便将引脚***通孔并保持整齐。例如，传输基板的厚度最好至少为连接销长度的1/2，以便可靠地***连接销。
传输基板应选择具有低热变形的材料，以减少连接柱在回焊过程中受热而产生的变形。例如，可以使用铝、不锈钢、碳化硅、钛和钨等材料。
粘合基材为与连接柱的一端接合的层，应选择不会在连接柱的回焊过程中燃烧的耐高温材料。该接合片位于连接柱***的反方向位置，一旦连接柱***，它将被接着层或黏着层固定。接合片可以使用聚酰亚胺树脂或聚酯类树脂薄膜等材料。
接着层的材料没有限制，只要能够黏合连接柱。例如，可以使用塑料接着剂、液体环氧树脂或EMC(Epoxy molding compound)。
如果使用黏着层，则可以仅更换黏着层以进行重复使用，因此从环保生产的角度来看，黏着层更为理想。黏着层的材料可以是具有耐高温特性的丙烯酸类黏着剂组成物或硅树脂类黏着剂组成物。这是因为需要确保连接柱在回焊过程中具有耐高温性能。
在这种情况下，为了增加黏着面积，建议使用软性材料制成黏着层。换句话说，为了防止细长形状的连接柱仅仅在末端接触而导致黏着面积不足从而松动脱落，连接柱应该穿入软性黏着层中以扩大黏着面积。
黏着层可以包括两层，即接合片侧的第一黏着层和该第一黏着层上的第二黏着层。第一黏着层可以是较硬的黏着层，而第二黏着层可以是较软的黏着层，第二黏着层可以由前述的丙烯酸类黏着剂或硅类黏着剂中含有环氧化合物的组成制造而成。
此外，黏着层的黏着力减弱的传输支架可以从传输基板上取下粘合基材，并将新的粘合基材附着到传输基板上以便重新使用。
图5是使用柱传输支架将柱传输并连接到基板之间的工序图。根据图中所示，连接的工序包括连接柱***阶段、传输阶段和连接阶段。
***阶段是将连接柱***柱传输支架的穿透孔中的阶段。通过这样的方式，连接柱就被固定在配备有黏着层或黏着层的接合片上的柱传输支架中。***可以采用多种方式进行，并且可以使用专用治具。***的连接柱通过背面的黏着层或黏着层黏着以确保即使翻转也不会脱落，并形成连接柱传输支架以供储存和传输。
传输阶段是将连接柱传输支架翻转，使连接柱能够按照指定位置对齐，将其传输到需要连接的基板电极或焊盘上的过程。连接柱传输支架使每个连接柱与底部基板上相应的暴露电极或焊盘相连接。
连接阶段是进行回流焊工艺，使连接柱的焊锡层熔化，以实现其与基板上的电极或焊盘的连接过程。在此过程中，传输基板粘合基材应使用耐高温的材料，以确保在回流焊后也能轻松移除而不损坏。
粘合基材去除阶段是移除粘合基材的过程。在此阶段中，由于粘合基材的粘着力比焊料与焊盘之间的结合力弱，因此可以将其移除。
根据本方案，使用连接柱传输支架可以从外部传输连接柱以连接板与板之间或板与半导体芯片之间，因此无需腐蚀或其他湿法工艺，简化了工艺流程。
<第4方面>
本发明的第4方面提供了一种利用连接柱进行电连接的方法。连接柱具有金属柱和附着在金属柱外表面的焊锡层。这样的连接柱经过所述的步骤，首先切割金属线，然后镀上焊锡层来形成。
制造好的连接柱首先与第一基板的电极或焊盘结合，然后与第二基板的电极或焊盘结合，实现电连接或者连接柱的一端与第一基板的电极或焊盘结合，另一端与半导体芯片结合，实现电连接。在这种情况下，结合是通过焊膏、助焊剂以及附着在连接柱外表面和/或底部的焊锡层在熔化的过程中实现的。
用于连接柱的焊膏可用于半导体封装中，特别是将金属柱的两端连接到半导体封装中的电极或基板上，或在金属柱的外表面形成焊料层。
助焊剂通过与焊接过程中焊料和组件接触的空气中的氧气发生反应来防止氧化，因此当焊料粉末熔化时，助焊剂也随之熔化，从而在焊料和组件之间形成清洁可靠的电气连接。助焊剂还能清洁组件表面，去除杂质、油和其他外部污染物，并改善焊料的"润湿性"，使焊料附着在组件表面。
通常情况下，连接柱通过熔化金属柱外表面的第一基板侧焊锡层，将一端固定在第一基板上，然后通过熔化第二基板侧焊锡层，将另一端固定在第二基板上，从而实现第一基板和第二基板之间的电连接。
然而，由于熔化引起的连接柱的焊锡层不以固定形状熔化，而是以随机形状熔化，因此存在连接柱高度不一致的问题。此外，当施加热量以将连接柱的另一端固定在第二基板上时，可能会导致熔化一端和第一基板之间的连接，从而导致连接柱倾斜或倒塌。
因此，本方面提供了一种稳定连接第一基板和第二基板，或基板和半导体芯片的方法，使用连接柱实现。
图6是表示连接方法的工序图。在图6中，为了描述方便，连接柱被夸大地倾斜。据此，连接工艺是电连接第一基板的电极或焊盘和第二基板的电极或焊盘的电连接方法。电连接方法包括以下步骤。第一端部连接步骤，将具有焊料层的连接引脚的一端连接至含铜的铜合金引脚或金属柱的外表面的至少一个区域至第一基板的电极或焊盘，并将其竖立；
树脂涂敷步骤，通过在第一基板上涂敷聚合物树脂至连接引脚的另一端在附接的连接引脚周围露出的高度而形成树脂膜；以及
第二端接连接步骤，将第一板翻转，熔化连接脚另一端的焊锡层，贴附于第二板。
首先，第一端部连接步骤是将连接柱的焊锡层熔化并附着到第一块基板上。在此过程中，连接柱可以在外侧整体、或者顶面和底面配备焊锡层。理想情况下，可以使用所述支架来将连接柱运输到第一基板上。与此同时，焊锡层熔化并附着到第一块基板上的焊盘或电极上，
另一方面，即使只使用金属柱或连接柱，也可以先将助焊剂、焊粉或焊膏涂抹到第一基板的焊盘或电极上并进行连接。用于此目的的助焊剂、焊锡粉末或焊锡膏可以根据用途使用各种不同的组合或物质，并不限于特定的组合。
树脂涂布阶段是在第一块基板上涂覆树脂组成物以固化连接柱周围。这样，连接柱就固定住，无法移动，从而可以防止连接柱坠落的问题。
在这种情况下，重要的是树脂组成物形成的层比引脚的高度低，以使连接柱的端部暴露出来。暴露的连接柱端部的高度最好在引脚高度的范围内，介于3μm至100μm之间。在这种情况下，可以使用环氧树脂类型、硅树脂类型的树脂组成物。暴露的连接柱端部外部上形成的焊锡层可以融化并连接到第二块基板上，并且连接柱的端部暴露使位置确认变得容易。此外，由于连接柱被树脂层固定在第一块基板上，即使端部倾斜，也不会对连接造成问题。
之后，第二端连接步骤是熔化连接柱另一端的焊料层并将其贴附至第二基板的步骤。在连接柱被树脂层包裹的状态下，将第一基板翻转并贴附到第二基板。此时，在电极或焊盘上提供涂有焊膏或助焊剂的第二基板，即使出现稍微突出连接引脚的高度，焊料层和焊盘或电极上提供的助焊剂和焊粉第二基板，由于焊膏等原因，连接没有问题。因此，可以使用设置有焊料层的连接引脚来连接第一基板和第二基板。
在这种情况下，连接柱的一端连接到第一块基板的电极或焊盘，连接柱的另一端连接到第二块基板的电极或焊盘。在此过程中，连接柱的一端和另一端所配备的焊锡层的焊锡组成可以相同也可以不同，但最好使用2的(a)、(b)、(f)等进行选择，根据情况也可以使用本发明的第1方面的各种金属柱或本发明的第2方面的各种连接柱或者本发明的第5方面的双层连接柱。
特别是在本实施例中，连接柱的另一端，即连接到第二块基板的连接柱的末端，最好配备焊锡层，这是为了使连接柱的另一端的末端暴露在树脂层上方，以便为连接到第二块基板所需的焊锡提供供应。
此外，在连接到第一块基板的连接柱的一端，最好具有第一熔点的焊锡层，并且连接到第二块基板的连接柱的另一端具有第二熔点的焊锡层，这是为了使连接柱的正面具有由第一熔点的焊锡组成的第一焊锡层，而底面的第二焊锡层由高于第一熔点的第二熔点的焊锡组成。在这种情况下，第二熔点与第一熔点的熔点差应满足5℃至25℃的要求。如果温差小于5℃，则第二焊锡可能在第一焊锡熔化时同时熔化；如果温差大于25℃，可能存在未熔化的问题。
第一个熔点宜在210至220℃之间，第二个熔点宜在225至235℃之间。
<第5方面>双焊层
在第三方面中，柱的焊料层不是通过熔化而熔化成恒定形状，而是呈随机形状，因此存在连接引脚的高度彼此不同的问题。已经表明，当施加热量以将连接柱的另一端附接到第二基板时，一端和第一基板熔化并且连接柱塌陷。
为此，可以如第四方面那样使用树脂层，但是作为另一种替代方案，本发明的第五方面提供了一种具有双层焊料层的连接引脚。图7表示连接用焊料层的截面。据此，焊锡层由内部的第一焊锡层和外部的第二焊锡层构成。其中，第一焊锡层由第一熔点的焊锡组成，第二焊锡层由第二熔点的焊锡组成。此时，第一熔点(T1)和第二熔点(T2)满足5℃＜T2-T1<25℃是可取的。当温差小于5℃时，第一焊锡熔化时第二焊锡也会同时熔化，而温差大于25℃时，可能存在未熔化的问题。
第一焊锡层最好使用Sn-Ag-Cu合金，以确保在回流焊前能够良好地附着在金属柱上，并在回流焊后保证连接的可靠性。该焊锡层可以包含银(Ag)、铜(Cu)、残余的锡和其他不可避免的杂质。第一焊锡层的第一熔点最好在210℃至220℃之间。
更具体地说，提供了由1.2至4.0重量％的银(Ag)、0.2至1.0重量％的铜(Cu)、残余的锡(Sn)和其他不可避免的杂质组成的焊锡合金。
第2焊锡层宜使用Sn，但可包含任意不可避免的杂质。第2焊锡层的第2熔点宜在225℃至235℃之间。更具体地说，提供一种含有100重量％Sn和任意不可避免杂质的焊锡合金。此时，第一焊锡层的厚度(t1)和第二焊锡层的厚度(t2)之间的比值应满足0.1<t2/t1<0.5。如果比值小于0.1，则第二焊锡层的熔化量太少，无法稳定地附着在基板上；如果超过0.5，则第二焊锡层的熔化量过多，可能导致连接柱倾斜。
这样制造的连接柱在应用于基板时能够提供优异的抗跌落强度、热循环特性和濡湿性，同时具有较低的缺失率。此外，通过在内部形成具有第1熔点的第1焊锡层，并在外部形成具有第2熔点的第2焊锡层，当连接柱与第1基板连接时，可以施加比T1温度高而低于T2温度的温度，从而只溶融第1焊锡层内的焊锡而无需溶融第2焊锡层。因此，这样制造的连接柱可以在内部的第1焊锡层溶融时稳固地放置在第1基板上，这种连接是临时的，因为第1焊锡层的数量较少；而外部的第2焊锡层尚未溶融，所以即使连接柱倾斜，也只会轻微倾斜。
为了连接第一基板上的连接柱与第二基板的电极或焊盘，或者半导体芯片的电极或焊盘，需要再次升高温度超过T2温度，使第二焊锡层熔化，从而完全连接第一基板上的电极和连接柱，并实现第二基板和连接柱的连接。因此，通过为连接柱配备不同的焊锡层，无需使用像第四方案中描述的组成物的过程，就能够将连接柱稳定地连接到第一基板和第二基板上。
<实施形>
<实施形1>：铜合金柱制造
我们准备了含有5.0％Sn的铜合金溶融液，通过将这些铜合金线通过模具拉伸，使其在顶面和底面的直径达到110μm，然后在长度(高度L)达到490μm的位置剪断，以制作所需的铜合金柱。剪断过程使用了模切方法。
然后，我们对这些铜合金柱进行退火处理，退火条件是将其从室温加热至200℃，保持加热时间为20分钟，然后在200℃下保持180分钟，最后再将其从200℃冷却至室温，冷却时间为20分钟。内部冷却过程使用了内部冷却风扇进行。
<实施形2至实施形5>
按照实施形1的方法制造铜合金柱，但合金成分的添加元素含量和退火温度请参见表1。
【表格1】
<比较形1至3>以与实施形态1相同的方法制造铜合金柱，但合金成分的添加元素和含量以及退火温度已整理在下表2中。
【表格2】
添加元素和含量(％) 退火温度℃
比较形1 无Sn 320
比较形2 Sn 0.05％ 350
比较形3 Sn 25％ 380
<实施形6至10>：焊锡层形成
使用实施形态1制造的铜合金柱，在整个表面上涂覆了由Sn-Ag-Cu组成的焊锡层。首先，对铜合金柱进行清洗，然后将铜合金柱放入桶中，在阳极上悬挂镍(Ni)，并在镀液中添加硫代硫酸镍(Ni)镀液和添加剂，然后在铜合金柱上悬挂阴极进行电镀。此时，温度保持在55～65℃之间。以电流密度0.1A/dm进行2小时的电镀处理，形成约2.1μm厚度的扩散层。
接下来，将形成了扩散层的铜合金柱放入桶中，在阳极上悬挂Sn-Ag，并在镀液中添加MS-Cu镀液和添加剂，然后在铜合金柱上悬挂阴极进行电镀。此时，温度保持在20～30℃之间。以电流密度1A/dm进行3小时的电镀处理，形成约4μm厚度的第1层焊锡层，从而制造出连接柱。其中，第1层焊锡层通过调节Ag和Cu的浓度来形成，并将其组成整理如表格3所示。
【表格3】
<实施形6-1至10-1>：焊锡层形成
通过实施形1，将由Sn-Ag-Cu组成的焊锡层覆盖在整个铜合金柱表面上。首先对铜合金柱进行酸洗处理，然后将铜合金柱放入桶中，在阳极上悬挂Sn-Ag，并在镀液中添加MS-Cu镀液和添加剂，然后在铜合金柱上悬挂阴极进行电镀。此时，温度保持在20～30℃之间。以电流密度1A/dm进行3小时的电镀处理，形成约6μm厚度的第1层焊锡层，从而制造出连接柱。其中，第1层焊锡层的组成按照表格4的要求形成。
实施形6-1至10-1的实施形式是制造不形成扩散层的连接柱。
【表格4】
组成(composition)
实施形6-1 Sn1.5Ag0.2Cu
实施形7-1 Sn2.0Ag0.2Cu0.3Zn
实施形8-1 Sn3.0Ag0.2Cu
实施形9-1 Sn1.5Ag0.8Cu
实施形10-1 Sn3.0Ag0.8Cu
<比较形4至5>
实施形1所制造的铜合金柱表面全覆盖以Sn-Bi形成的焊锡层。镀液使用的是甲磺酸甲酯类的溶液，焊锡层通过电镀金的方法，通过调节Ag和Bi的浓度来形成，组成情况整理如表5所示。
【表格5】
/>
<实施形11至实施形15>：二重焊锡层形成
实施形6至10的铜合金柱在第1焊锡层的表面上形成了由Sn组成的第2焊锡层。将形成第1焊锡层的铜合金柱放入桶中，阳极上悬挂Sn-Ag，将阴极连接到铜合金柱上，进行电镀。此时温度保持在20～30℃。使用电镀的方法，在1A/dm的电流密度下进行3小时的镀金，形成约5μm厚的第2焊锡层，从而制造铜合金柱。使用的镀液是基于甲磺酸甲酯的溶液，第1焊锡层通过调节Ag和Cu的浓度进行电镀形成，而第2焊锡层则是通过电镀的方法形成Sn镀层。组成情况整理如表格6所示。
【表格6】
<实验形>
<实验形1>：测量铜合金柱的毛刺生成与否
图8展示了根据实施形式和比较形式拍摄的金属柱毛刺生成的电子显微镜照片。根据照片显示，当Sn的含量在0.1wt％至20wt％之间，并且退火温度介于160至300之间时，实施形式1到实施形式5中切割金属柱时不会生成毛刺，然而比较形式则可以观察到生成的毛刺较大且较多。
<实验形2>：铜合金柱的维氏硬度和电导率(受到组成和热处理温度的影响)
实施形1到5和比较形式1到3的维氏硬度和电导率实验结果总结在表格7中。
【表格7】
维氏硬度(HV) 电气传导度
实施形1 302 15
实施形2 288 13
实施形3 261 12
实施形4 246 9
实施形5 218 8
比较形1 369 101
比较形2 352 86
比较形3 190 28
<实验形3>：关于连接柱的剪切强度测试
本发明的实施形6至10所制造的连接柱与基板连接后进行了剪切强度测试，结果整理如表8所示。印刷电路板采用经OSP处理的铜表面处理，基板的铜表面尺寸为φ220μm。连接方法是在基板上打印flux或焊锡膏，然后使用回流炉在峰值温度250℃下保持50秒进行连接。
【表格8】
<实验形4>：跌落冲击试验
为了测试试样的坠落冲击强度，按照JESD22-B111规范进行了测试。具体而言，对连接柱粘结在经过铜表面处理的印刷电路板上进行了重力加速度1500G、0.5毫秒的冲击，并通过焊锡的5％破坏次数和63.2％破坏次数来测量坠落冲击强度。试样的破坏被认为是当初始电阻增加超过10％时发生的，而在连续进行的5次坠落评估中，当3次坠落冲击阻力值增加超过初始电阻的10％时被视为破坏。测试结果整理如表9所示。
【表格9】
<实验形5>：热循环测试
进行了符合JEDS22-A104-B标准的热循环测试，测试条件为-40℃至125℃。在125℃下保持10分钟，然后转换到-40℃并保持10分钟，这构成一个循环。测试结果显示，发生5％故障的循环次数和发生63.2％故障的循环次数。故障判断基准是每完成100个循环时测量电阻，如果发生断路，则排除该试片。
表格10显示了连接柱的热循环测试结果。表10显示了引脚的热循环测试结果。可以看出，含镍和钯的热循环寿命至少是不含镍和钯的两倍。可以看出，当实施形5中的镍和钯含量分别为0.05wt％和0.03wt％时，热循环次数最多。
【表格10】
<实验形6>：根据金属填料成分切割的表面电子显微照片。
以与实施形1相同的方式制备铜合金销钉，但制备了与表1相对应的多种合金成分的实施形和比较形，并测量了抗拉强度，拍摄了电子显微照片，如图9所示。相应地，可以看出实施例的毛刺和缺陷明显减少。
【表格11】
尽管该描述中提供了许多具体细节，但它们应被解释为实施示例，而不是限定发明的范围。因此，本发明的范围应由所记载的技术特征依据专利权要求范围来确定，而不是由所述实施例来确定。

Claims (9)

1.一种金属柱，金属线的两端被切割成一定长度形成柱状的导电连接的金属柱，其特征在于：
该导电连接的金属柱的电导率在11至101％IACS之间，维氏硬度则在150至300HV之间。
2.如请求项1所述之导电连接的金属柱，
该导电连接的金属柱的直径范围为50至300μm，高度范围为60至3，000μm。
3.如请求项2所述之导电连接的金属柱，
该导电连接的金属柱的长径比(长度/直径)范围为1.2至5。
4.如请求项3所述之导电连接的金属柱，
该导电连接的金属柱的熔点范围为500至1000℃。
5.如请求项4所述之导电连接的金属柱，
该金属柱的拉伸强度为170至950MPa。
6.如请求项4所述之导电连接的金属柱，
导电连接的金属柱包含至少一种从Cu、Ag、Au、Pt和Pd组成的金属，作为其主要成分。
7.如请求项6所述之导电连接的金属柱，
该导电连接的金属柱至少含有0.1至20wt.％的由Sn、Fe、Zn、Mn、Ni、P组成的一种或多种元素。
8.如请求项6所述之导电连接的金属柱，
该导电连接的金属柱的热导性为50至450W/mK。
9.一种导电连接的金属柱的制造方法，其特征在于，包括以下步骤：
步骤1，熔融：主要金属熔液中加入添加元素熔化；
步骤2，绞线：该熔融后，通过轧制、压制或拉伸将熔体制成股线或薄片；
步骤3，拉拔：将该绞线或该薄片拉拔成线材；
步骤4，热处理：将该拉拔后的线材进行热处理，温度范围为160至300度；以及
步骤5，切割：将该线材切割成一定长度以制造金属柱；
其中该金属柱的电导率在11至101％IACS之间，维氏硬度则在150至300HV之间。
CN202311107048.8A 2022-09-06 2023-08-30 导电连接的金属柱 Pending CN117673009A (zh)

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