CN117645271A - Resonant pressure sensor based on through silicon via technology and preparation method thereof - Google Patents
Resonant pressure sensor based on through silicon via technology and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a resonant pressure sensor based on a silicon through hole technology and a preparation method thereof, wherein the sensor comprises a substrate layer, a resonant pressure sensing structure layer, a vacuum bonding cover plate, a plurality of through holes, a plurality of convex points, a circuit chip, a substrate, a packaging ball, a packaging shell, an air vent and an air permeable diaphragm; the substrate layer is used for supporting the resonant pressure sensing structural layer; wherein the substrate layer comprises two pressure sensitive films for transmitting pressure; the resonant pressure sensing structure layer is used for sensing pressure and generating corresponding electric signals; the resonant pressure sensing structure layer comprises a bottom layer and a top layer, wherein the top layer comprises an excitation electrode, a main resonant beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a biasing electrode. The embodiment of the invention reduces the volume of the resonant pressure sensor to a great extent, reduces the power consumption, and can be widely applied to the field of sensors.
Description
Technical Field
The invention relates to the field of sensors, in particular to a resonant pressure sensor based on a through silicon via technology and a preparation method thereof.
Background
A pressure sensor is a device capable of sensing pressure and converting a pressure signal into an electrical signal, and MEMS (micro electro mechanical system) pressure sensors are widely used in various industrial practice fields including consumer electronics, medical treatment, automobile industry, aerospace and the like. Common MEMS (micro electro mechanical systems) pressure sensors include piezoresistive pressure sensors, capacitive pressure sensors, piezoelectric pressure sensors, resonant pressure sensors, and the like; the resonant pressure sensor has higher precision and long-term stability than the piezoresistive pressure sensor and the capacitive pressure sensor due to the characteristics of high stability and high signal-to-noise ratio of the quasi-digital output, and is widely applied to the fields of aerospace, industrial control, instrument calibration and the like.
The existing resonant pressure sensor is usually connected with an Application Specific Integrated Circuit (ASIC) chip for processing signals of the sensor in a horizontal lead mode, so that the packaged device is oversized and has higher power consumption; and the sensitivity is limited, and the higher sensitivity requirement cannot be met.
Disclosure of Invention
Accordingly, an object of the embodiments of the present invention is to provide a resonant pressure sensor based on a through silicon via technology and a method for manufacturing the same, which reduces the volume of the resonant pressure sensor, reduces power consumption, and improves the sensitivity of the resonant pressure sensor.
In a first aspect, an embodiment of the present invention provides a resonant pressure sensor based on a through silicon via technology, including a substrate layer, a resonant pressure sensing structure layer, a vacuum bonding cover plate, a plurality of through holes, a plurality of bumps, a circuit chip, a substrate, a package ball, and a package housing; wherein,
a substrate layer for supporting the resonant pressure sensing structural layer; wherein the substrate layer comprises two pressure sensitive films for transmitting pressure;
the resonant pressure sensing structure layer is used for sensing pressure and generating corresponding electric signals; the resonant pressure sensing structure layer comprises a bottom layer and a top layer, wherein the top layer comprises an excitation electrode, a main resonant beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a biasing electrode;
the vacuum bonding cover plate is used for protecting the resonant pressure sensing structural layer and reducing the interference of the outside on the resonant pressure sensing structural layer;
the through hole is used for leading out an electrode of the resonant pressure sensing structural layer or leading out a signal of the circuit chip;
the salient points are used for enabling the resonant pressure sensing structural layer to be electrically connected with the circuit chip or enabling the circuit chip to be electrically connected with the substrate;
the circuit chip is used for converting the electric signal into a pressure value measured by the resonant pressure sensor;
the base plate is used for transmitting signals output by the circuit chip;
the packaging ball is used as an input pin or an output pin of the resonant pressure sensor;
the packaging shell is used for protecting the resonant pressure sensor; the packaging shell comprises a ventilation opening and a ventilation diaphragm, wherein the ventilation opening is used for allowing external fluid to pass through; and the ventilation diaphragm is used for isolating impurities while passing outside fluid.
Optionally, the bottom layer is disposed on the substrate layer, and the top layer is disposed on the bottom layer; the main resonance beam is located between excitation electrode and the sensing electrode, and the both ends of main resonance beam all set gradually from being close to main resonance beam to the direction that keeps away from main resonance beam: a support beam, a connecting beam, a torsion beam and a stress transmission structure; the parts of the top layer other than the excitation electrode, the main resonance beam, the sensing electrode, the stress transfer structure, the torsion beam, the connection beam and the support beam constitute a bias electrode.
Optionally, the bottom layer portions under the main resonance beam, the torsion beams, the connection beams, and the support beams are removed, and the main resonance beam, the two torsion beams, the two connection beams, and the two support beams are in a suspended state.
Optionally, the main resonance beam, the two torsion beams, the two connection beams, the two support beams and the bias electrode are in an integrated structure, so that the main resonance beam, the two torsion beams, the two connection beams and the two support beams are in a suspended state.
Optionally, grooves are arranged around the excitation electrode and the sensing electrode, which follow the outline of the excitation electrode and the outline of the sensing electrode; the bias electrode is separated from the excitation electrode by a trench, and the bias electrode is separated from the sense electrode by a trench.
Optionally, the two stress transfer structures are provided with a first opening on a side close to the main resonance beam; the torsion beam is disposed between the first opening and the connection beam.
Optionally, the substrate layer further comprises two second openings; the substrate layer is partially removed to form a second opening, the opening direction of the second opening is the direction away from the resonant pressure sensing structural layer, and the bottom of the second opening is close to the resonant pressure sensing structural layer; the portion of the substrate layer that remains after being removed constitutes the pressure sensitive membrane.
Optionally, the substrate layer and the resonant pressure sensing structural layer form a laminated structure, and the torsion beam and the stress transfer structure are located in corresponding regions of the pressure sensitive film in the resonant pressure sensing structural layer.
In a second aspect, an embodiment of the present invention further provides a method for preparing a resonant pressure sensor based on a through silicon via technology, which is used for preparing the resonant pressure sensor based on the through silicon via technology as described above, including:
preprocessing the substrate layer;
preparing a resonant pressure sensing structural layer on the pretreated substrate layer; the resonant pressure sensing structure layer comprises a bottom layer and a top layer, wherein the top layer comprises an excitation electrode, a main resonant beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a biasing electrode;
etching two second openings on the substrate layer to obtain two pressure sensitive films;
preparing a vacuum bonding cover plate, and preparing a plurality of first through holes in the vacuum bonding cover plate;
vacuum bonding is carried out on the vacuum bonding cover plate and the resonant pressure sensing structural layer;
filling a plurality of first through holes with conductive materials, and preparing a plurality of conductive electrodes on the surfaces of the plurality of first through holes;
preparing a plurality of second through holes in the circuit chip, and preparing a plurality of conductive electrodes on two sides of the circuit chip;
and bonding the vacuum bonding cover plate and the circuit chip through a plurality of protruding points, and packaging the bonded structure to obtain the resonant pressure sensor based on the through silicon via technology.
Optionally, preparing a resonant pressure sensing structural layer on the pretreated substrate layer, specifically including:
preparing a bottom layer of the resonant pressure sensing structure layer on the pretreated substrate layer, and etching a region corresponding to the pressure sensitive film and a region corresponding to the resonant structure in the top layer on the bottom layer; the resonance structure comprises a main resonance beam, two torsion beams, two connecting beams and two supporting beams;
preparing a sacrificial layer on the etched area, and flattening the sacrificial layer to ensure that the height of the sacrificial layer is consistent with that of the bottom layer;
preparing a top layer on the bottom layer and the sacrificial layer, and etching an excitation electrode, a main resonance beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a bias electrode on the top layer;
and removing the sacrificial layer to suspend the resonant structure.
The embodiment of the invention has the following beneficial effects: the embodiment of the invention provides a resonant pressure sensor based on a silicon through hole technology, which comprises a substrate layer, a resonant pressure sensing structural layer, a vacuum bonding cover plate, a plurality of through holes, a plurality of protruding points, a circuit chip, a substrate, a packaging ball, a packaging shell, an air vent and an air permeable diaphragm, wherein the substrate layer is arranged on the substrate layer; the top layer of the resonant pressure sensing structural layer comprises an excitation electrode, a main resonant beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a bias electrode; the substrate layer includes two pressure sensitive films therein; in the resonant pressure sensor provided by the embodiment of the invention, the two pressure sensitive films and the main resonance beam form a structure that the double pressure sensitive films are coupled with the two ends of the main resonance beam, so that the gas pressure acts on the pressure sensitive films to cause deformation, and the stress change is transmitted to the main resonance beam, so that a changed electric signal is generated by an excitation electrode and a sensing electrode coupled with the main resonance beam and transmitted to a circuit chip through a through hole, the signal delay is reduced, the capacitance, the inductance and the power consumption are reduced, the precision sensitivity of the resonant pressure sensor can be further improved, and the application range of the resonant pressure sensor is enlarged; according to the resonant pressure sensor, the substrate layer, the resonant pressure sensing structural layer and the circuit chip are stacked in the vertical direction, connection and signal transmission between the resonant pressure sensing structural layer and the circuit chip are realized through the through holes, and the volume of the packaged resonant pressure sensor is greatly reduced; the size of each component of the resonant pressure sensor is smaller than 1cm, and the resonant pressure sensor can be used for high-precision pressure measurement in various fields requiring the size of the miniature pressure sensor. The embodiment of the invention also provides a preparation method of the resonant pressure sensor based on the through silicon via technology, and the conductive material filled in the through holes is metal with good conductivity, low electromigration and low cost, so that the preparation difficulty and the preparation cost are reduced; the through hole is prepared by adopting the silicon through hole technology, and has the advantages of reducing the packaging size, shortening the interconnection length between chips, realizing high-density integration, reducing transmission delay noise, reducing chip loss and improving thermal expansion reliability.
Drawings
FIG. 1 is a schematic diagram of a resonant pressure sensor based on through silicon via technology according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a top view of a resonant pressure sensing structure layer in a resonant pressure sensor based on through silicon via technology according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of a resonant pressure sensing structure layer in a resonant pressure sensor based on through silicon via technology according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a cross-sectional left-hand view of a resonant pressure sensing structure layer in a resonant pressure sensor based on through-silicon via technology according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a front view of a resonant pressure sensing structure layer in a resonant pressure sensor based on through silicon via technology according to an embodiment of the present invention;
FIG. 6 is a schematic flow chart of a method for manufacturing a resonant pressure sensor based on through silicon via technology according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart of another method for manufacturing a resonant pressure sensor based on through silicon via technology according to an embodiment of the present invention;
FIG. 8 is a top view of a vacuum bonded cover plate in a resonant pressure sensor based on through silicon via technology according to an embodiment of the present invention;
FIG. 9 is a graph of simulated relationship between resonant frequency and pressure of a resonant pressure sensor based on through silicon via technology under external pressure, according to an embodiment of the present invention;
FIG. 10 is a graph of simulated relationship between resonant frequency and pressure at low pressure for a resonant pressure sensor based on through silicon via technology, provided by an embodiment of the present invention.
Reference numerals illustrate: 1. a substrate layer; 11. a pressure sensitive membrane; 12. a second opening; 2. a bottom layer; 3. a top layer; 31. an excitation electrode; 32. a main resonance beam; 33. a sensing electrode; 34. a stress transfer structure; 35. a torsion beam; 36. a connecting beam; 37. a support beam; 38. a bias electrode; 4. vacuum bonding cover plate; 41. a cavity of the vacuum bonding cover plate; 5. 51-54, a first through hole; 6. a first bump; 7. 71-72, conductive electrodes on the circuit chip; 8. a circuit chip; 9. a second through hole; 10. a second bump; 13. a package housing; 14. a breathable membrane; 15. a substrate; 16. and (5) packaging the ball.
Detailed Description
The invention will now be described in further detail with reference to the drawings and to specific examples. The step numbers in the following embodiments are set for convenience of illustration only, and the order between the steps is not limited in any way, and the execution order of the steps in the embodiments may be adaptively adjusted according to the understanding of those skilled in the art.
In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is to be understood that "some embodiments" can be the same subset or different subsets of all possible embodiments and can be combined with one another without conflict.
In the following description, the terms "first", "second", "third" and the like are merely used to distinguish similar objects and do not represent a specific ordering of the objects, it being understood that the "first", "second", "third" may be interchanged with a specific order or sequence, as permitted, to enable embodiments of the invention described herein to be practiced otherwise than as illustrated or described herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the embodiments of the invention is for the purpose of describing embodiments of the invention only and is not intended to be limiting of the invention.
Before describing embodiments of the present invention in further detail, the terms and terminology involved in the embodiments of the present invention will be described, and the terms and terminology involved in the embodiments of the present invention will be used in the following explanation.
The through silicon via technology (TSV, through Silicon Via) is an advanced packaging technology for achieving different functional chip integration by vertically penetrating through different chips or different layers constituting a stacked structure through silicon vias, and features of the TSV include:
(1) Exist inside the chip;
(2) A multi-layered stacked structure formed vertically throughout the entire chip;
(3) Electrical interconnection is achieved by conduction through the material in the holes.
As shown in fig. 1, the embodiment of the invention provides a resonant pressure sensor based on a through silicon via technology, which comprises a substrate layer 1, a resonant pressure sensing structure layer, a vacuum bonding cover plate 4, a plurality of through holes, a plurality of protruding points, a circuit chip 8, a substrate 15, a packaging ball 16 and a packaging shell 13; wherein,
a substrate layer 1 for supporting the resonant pressure sensing structural layer; wherein the substrate layer comprises two pressure sensitive films for transmitting pressure;
the resonant pressure sensing structure layer is used for sensing pressure and generating corresponding electric signals; the resonant pressure sensing structural layer comprises a bottom layer 2 and a top layer 3, wherein the top layer 3 comprises an excitation electrode 31, a main resonance beam 32, a sensing electrode 33, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a bias electrode;
the vacuum bonding cover plate 4 is used for protecting the resonant pressure sensing structural layer and reducing the interference of the outside on the resonant pressure sensing structural layer;
the through hole is used for leading out an electrode of the resonant pressure sensing structural layer or leading out a signal of the circuit chip 8;
bumps for electrically connecting the resonant pressure sensing structural layer with the circuit chip 8 or electrically connecting the circuit chip 8 with the substrate 15;
a circuit chip 8 for converting the electric signal into a pressure value measured by the resonant pressure sensor;
a substrate 15 for transmitting a signal output from the circuit chip 8;
a package ball 16 for use as an input or output pin for the resonant pressure sensor;
a package housing 13 for protecting the resonant pressure sensor; wherein the packaging shell 13 comprises a ventilation opening and a ventilation diaphragm 14, wherein the ventilation opening is used for allowing external fluid to pass through; a gas-permeable membrane 14 for passing an external fluid while isolating impurities.
Specifically, the bumps include a first bump 6 and a second bump 10; wherein the first bump 6 is used for electrically connecting the resonant pressure sensing structural layer with the circuit chip 8, and the second bump 10 is used for electrically connecting the circuit chip 8 with the substrate 15.
Specifically, the resonant pressure sensor based on the through silicon via technology in the embodiment of the invention comprises a packaging part and an internal sensor structure part. The packaging part is characterized in that the substrate 15 is taken as a bottom, a packaging shell 13 is arranged on the substrate 15, a ventilation opening is arranged in the center of one surface of the packaging shell 13 opposite to the substrate 15, and a ventilation diaphragm 14 covering the whole ventilation opening is arranged in the ventilation opening; a plurality of encapsulation balls 16 are provided on the lower surface of the substrate 15. The internal sensor structure part sequentially comprises the following components from bottom to top: the circuit chip 8 is provided with a plurality of second bumps 10 for connecting the substrate 15 and the circuit chip 8, a plurality of first bumps 6 for connecting the circuit chip 8 and the resonant pressure sensing structural layer, and a resonant pressure sensing structural layer and a substrate layer 1 which are provided with a plurality of first through holes 5.
Specifically, external air enters the resonant pressure sensor of the embodiment of the present invention from the air vent provided with the air vent diaphragm 14, and applies pressure to the pressure sensitive film 11 of the substrate layer 1, so that the pressure sensitive film 11 is deformed, and the resonant structure of the resonant pressure sensing structural layer is deformed and subjected to stress change, so that the resonant frequency of the resonant structure is changed; excitation and detection are performed by an excitation electrode 31 and a sensing electrode 33 coupled with a main resonance beam 32 in the resonance structure, generating an electrical signal; the electrical signal is transmitted to the circuit chip 8 through the first through hole 5, the circuit chip 8 converts the electrical signal into a pressure value output, and the measured pressure value is transmitted to an external circuit through the substrate 15 provided with the package ball 16.
Specifically, the resonance structure includes a main resonance beam 32, two stress transfer structures 34, two torsion beams 35, two connection beams 36, and two support beams 37; the resonant structure is positioned at the center of the resonant pressure sensing structural layer.
Specifically, the circuit chip 8 includes an Application Specific Integrated Circuit (ASIC) chip, and the substrate 15 includes a Printed Circuit Board (PCB).
In a specific embodiment, when the excitation electrode 31 and the sensing electrode 33 are coupled to the resonant beam in a capacitive manner, a capacitance-voltage (C-V) conversion circuit is required in the circuit chip 8 to convert the output capacitance signal of the sensing electrode 33 into a voltage signal.
Specifically, the circuit chip 8 includes a voltage output circuit, a memory circuit, an analog-to-digital conversion circuit, a microprocessor, and other functional structures, where the voltage output circuit can output a voltage signal that adds a direct voltage to an alternating voltage, and the frequency of the alternating voltage signal follows the frequency of an external input alternating voltage.
Specifically, when the circuit chip 8 works, a preset fixed dc voltage is applied to the exciting electrode 31, then an ac voltage with a variable frequency is applied, the area where the main resonant beam 32 is located is grounded, and when the ac voltage frequency is equal to the characteristic frequency of the resonant beam, the sensing electrode 33 obtains an output signal with a corresponding frequency, and the sensing output signal is converted into a digital signal after being processed and output.
Specifically, the conductive electrode 7 on the circuit chip 8 is connected to the substrate 15 through the second through hole 9, and then the package ball 16 is led out, so as to form an input/output pin of the resonant pressure sensor.
Specifically, when the coupling mode of the excitation electrode 31 and the sensing electrode 33 and the resonance beam is piezoresistive coupling or piezoelectric coupling, the generated electric signal is a voltage signal, and a C-V conversion circuit is not required in the circuit chip 8.
Optionally, the bottom layer 2 is disposed on the substrate layer 1, and the top layer 3 is disposed on the bottom layer 2; as shown in fig. 2, the main resonance beam 32 is located between the excitation electrode 31 and the sensing electrode 33, and both ends of the main resonance beam 32 are sequentially provided with: a support beam 37, a connection beam 36, a torsion beam 35, and a stress transmission structure 34; the bias electrode 38 is formed in the top layer 3 except for the excitation electrode 31, the main resonance beam 32, the sense electrode 33, the stress transmitting structure 34, the torsion beam 35, the connection beam 36, and the support beam 37.
As shown in fig. 3, the main resonance beam 32, the two stress transfer structures 34, the two torsion beams 35, the two connection beams 36, and the two support beams 37 are formed by etching on the top layer 3.
Specifically, the bottom layer 2 is used for providing support for the top layer 3, and has an insulating effect; the material of the bottom layer 2 includes an insulating material such as silicon oxide or silicon nitride, and the specific insulating material is determined according to practical situations, which is not limited in the embodiments of the present invention, but only provided for reference, for example, the material of the bottom layer is silicon dioxide.
Specifically, the material of the top layer 3 includes a silicon material that is easy to conduct, and the specific material is determined according to practical situations, and the embodiment of the present invention is not limited, but only provided for reference, such as doped polysilicon or doped monocrystalline silicon.
Specifically, the excitation electrode 31 and the sensing electrode 33 disposed at two sides of the main resonant beam 32 implement excitation and pressure detection by coupling modes including capacitive coupling, piezoresistive coupling or piezoelectric coupling, and the specific coupling mode is determined according to practical situations.
Alternatively, the portions of the bottom layer 2 under the main resonance beam 32, the torsion beams 35, the connection beams 36, and the support beams 37 are removed, and the main resonance beam 32, the two torsion beams 35, the two connection beams 36, and the two support beams 37 are in a suspended state.
Specifically, the main resonance beam 32, the two torsion beams 35, the two connection beams 36, and the two support beams 37 are in a suspended state, so that when the resonance structure senses deformation of the pressure sensitive film 11 through the stress transmission structure 34, mechanical vibration is generated under the excitation of an ac voltage having a certain frequency.
Alternatively, the main resonance beam 32, the two torsion beams 35, the two connection beams 36, the two support beams 37, and the bias electrode 38 are integrally constructed such that the main resonance beam 32, the two torsion beams 35, the two connection beams 36, and the two support beams 37 are in a suspended state without falling.
Specifically, the bias electrode 38 is a portion of the top layer 3 except for the excitation electrode 31, the main resonance beam 32, the sensing electrode 33, the stress transfer structure 34, the torsion beam 35, the connection beam 36, and the support beam 37, and the bottom layer 2 of the lower layer of the bias electrode 38 is not etched, so that the horizontal pulling force inside the bias electrode 38 can make the main resonance beam 32, the two torsion beams 35, the two connection beams 36, and the two support beams 37 in a suspended state without falling.
Optionally, grooves are provided around the excitation electrode 31 and the sensing electrode 33, which follow the contour of the excitation electrode 31 and the contour of the sensing electrode 33; the bias electrode 38 is separated from the excitation electrode 31 by a trench, and the bias electrode 38 is separated from the sense electrode 33 by a trench.
As shown in fig. 2, the shapes of the excitation electrode 31 and the sensing electrode 33 include L-shaped rectangles, bottoms of the two L-shaped rectangles are oppositely arranged, and a main resonance beam 32 is arranged between the bottoms of the two L-shaped rectangles; the specific shape of the excitation electrode 31 or the sensing electrode 33 is determined according to practical situations, and the embodiment of the present invention is not limited and is provided for reference only.
As shown in fig. 3 and 4, grooves are provided around the excitation electrode 31 and the sensing electrode 33, which follow the outline of the excitation electrode 31 and the outline of the sensing electrode 33, and the depth of the grooves is the sum of the thickness of the bottom layer 2 and the thickness of the top layer 3.
Optionally, two stress transfer structures 34 are provided with a first opening on the side close to the main resonance beam 32; the torsion beam 35 is disposed between the first opening and the connection beam 36.
Specifically, the stress transfer structure 34 includes a rectangular parallelepiped structure, and the specific shape of the stress transfer structure 34 is determined according to practical situations, and the embodiment of the present invention is not limited and is provided for reference only.
Specifically, a first opening is provided on the side of the stress transfer structure 34 close to the main resonance beam 32, the first opening penetrating the top layer 3; the narrow beam left between the first opening and the edge of the side close to the main resonance beam 32 is the torsion beam 35.
Optionally, the substrate layer 1 further comprises two second openings 12; wherein, the part of the substrate layer 1 is removed to form a second opening 12, the opening direction of the second opening 12 is the direction away from the resonant pressure sensing structural layer, and the bottom of the second opening 12 is close to the resonant pressure sensing structural layer; the portion of the substrate layer 1 remaining after removal of the substrate layer 1 constitutes the pressure sensitive membrane 11.
As shown in fig. 5, two second openings 12 with opening directions facing away from the resonant pressure sensing structural layer are arranged in the substrate layer 1, and the second openings 12 are formed by etching the substrate layer 1 at preset positions; the cladding layer remaining at the bottom of the opening after etching constitutes the pressure sensitive film 11.
Specifically, when the pressure sensitive film 11 is subjected to pressure and deformed, the stress transfer structure 34 generates stress change, and the stress change is transferred to the main resonance beam 32 after passing through the torsion beam 35, the support beam 37 and the connection beam 36 in sequence, and the stress change of the main resonance beam 32 can change the characteristic frequency of the resonance structure, so that the characteristic frequency of the resonance structure reflects the magnitude of external pressure.
Alternatively, the substrate layer and the resonant pressure sensing structural layer constitute a laminated structure, with the torsion beam 35 and the stress transfer structure 34 being located in corresponding areas of the pressure sensitive membrane 11 in the resonant pressure sensing structural layer.
Specifically, the stress transfer structure 34 is located above the edge of the pressure sensitive membrane 11 to obtain the maximum stress variation after deformation of the pressure sensitive membrane 11.
In a specific embodiment, the excitation electrode 31 and the sensing electrode 33 disposed at both sides of the main resonance beam 32 are coupled with the main resonance beam 32 through comb capacitors; when the resonant pressure sensor starts to work, a direct-current voltage signal is applied to the excitation electrode 31, the sensing electrode 33 is grounded, electrostatic force is generated between the main resonance beam 32 and the excitation electrode 31, and meanwhile, capacitance exists between the main resonance beam 32 and the sensing electrode 33; after an alternating current signal with a certain frequency is added to the excitation electrode 31, the main resonance beam 32 is forced to vibrate, when the frequency is equal to the characteristic frequency of the main resonance beam 32, the vibration amplitude of the main resonance beam 32 is maximum, at the moment, the capacitance between the main resonance beam 32 and the sensing electrode 33 generates periodic maximum change, and a voltage signal with a certain frequency is formed after the periodic frequency passes through the capacitance-voltage conversion circuit, wherein the frequency is the characteristic frequency of the main resonance beam 32.
As shown in fig. 6, the embodiment of the present invention further provides a method for preparing a resonant pressure sensor based on the through silicon via technology, which is used for preparing the resonant pressure sensor based on the through silicon via technology, including:
s100, preprocessing the substrate layer 1.
Specifically, the material of the substrate layer 1 includes silicon, and the specific material is determined according to practical situations, and the embodiment of the present invention is not limited and is provided for reference only.
Specifically, the pretreatment includes: the substrate layer 1 is cleaned.
S200, preparing a resonant pressure sensing structural layer on the pretreated substrate layer; the resonant pressure sensing structural layer comprises a bottom layer 2 and a top layer 3, the top layer 3 comprising an excitation electrode 31, a main resonance beam 32, a sensing electrode 33, two stress transfer structures 34, two torsion beams 35, two connection beams 36, two support beams 37 and a biasing electrode 38.
Specifically, a resonant pressure sensing structural layer is prepared, comprising:
s210, preparing a bottom layer 2 and a top layer 3 on the substrate layer 1 in sequence;
s220, etching out an excitation electrode 31, a main resonance beam 32, a sensing electrode 33, two stress transfer structures 34, two torsion beams 35, two connecting beams 36, two support beams 37 and a bias electrode 38 in the top layer 3;
s230, removing a preset part in the bottom layer 2 to suspend the resonance structure.
And S300, etching two second openings 12 on the substrate layer 1 to obtain two pressure sensitive films 11.
Specifically, as shown in the graph (h) of fig. 7, two second openings 12 are etched at predetermined positions of the substrate layer 1, resulting in two pressure-sensitive films 11.
S400, as shown in diagrams (i) - (k) in fig. 7, a vacuum bonding cap 4 is prepared, and a plurality of first through holes 5 are prepared in the vacuum bonding cap 4.
Specifically, when the primary resonant beam 32 is in vacuum, the primary resonant beam 32 is minimally subject to interference.
In a specific embodiment, the structure of the vacuum bonding cap 4 is shown in fig. 8, and the vacuum bonding cap 4 includes a cavity 41 and four first through holes; the area of the cavity 41 covers the pressure sensitive membrane 11, the main resonance beam 32, the coupling area of the excitation electrode 31 and the main resonance beam 32, the coupling area of the sensing electrode 33 and the main resonance beam 32, part of the excitation electrode 31 and part of the sensing electrode 33.
Specifically, the first through holes 51 and 54 are connected to the ground electrode on the circuit chip 8, the first through holes 52 are connected to the excitation electrode 31, and the first through holes 53 are connected to the electrode for inputting the sensing signal on the circuit chip 8.
Specifically, the material of the vacuum bonding cover plate 4 includes glass, and the specific material is determined according to practical situations, and the embodiment of the present invention is not limited and is provided for reference only.
S500, as shown in fig. 7 (l), vacuum bonding is performed on the vacuum bonding cover plate 4 and the resonant pressure sensing structural layer.
Specifically, the vacuum bonding cover plate 4 and the resonance type pressure sensing structural layer are vacuum bonded so that the region on the resonance type pressure sensing structural layer covered by the cavity 41 is in vacuum.
S600, as shown in the graph (m) in fig. 7, a plurality of first through holes 5 are filled with a conductive material, and a plurality of conductive electrodes are prepared on the surfaces of the plurality of first through holes 5.
Specifically, the manner of filling the plurality of first through holes 5 includes filling the first through holes 5 by using a damascene process; the conductive material includes a conductive material such as copper, tungsten, nickel or doped silicon, and the specific material is determined according to practical situations, and the embodiment of the present invention is not limited and is provided for reference only, for example, copper is used to fill the first via hole 5.
Specifically, the manner of filling the first through hole 5 includes electroplating, and the specific filling manner is determined according to practical situations, which is not limited by the embodiment of the present invention, and only examples are provided for reference.
Specifically, a conductive electrode is prepared on the surface of the first through hole 5, including:
and S601, flattening the filled first through holes 5 and etching to prepare conductive electrodes exposed on the surfaces of the first through holes 5.
S700, as shown in the diagrams (n) - (o) in fig. 7, a plurality of second through holes 9 are prepared in the circuit chip 8, and a plurality of conductive electrodes 7 are prepared on both sides of the circuit chip 8.
Specifically, a number of second vias 9 are prepared by means of a through silicon via technique.
Specifically, a plurality of conductive electrodes 7 are prepared at both ends of the plurality of second through holes 9, and a number of conductive electrodes 7 corresponding to the number of first through holes 5 are prepared at corresponding positions of the plurality of first through holes 5 on the circuit chip 8.
S800, as shown in diagrams (p) - (q) in fig. 7, bonding the vacuum bonding cover plate 4 and the circuit chip 8 through a plurality of bumps, and packaging the bonded structure to obtain the resonant pressure sensor based on the through-silicon via technology.
Specifically, the vacuum bonding cover plate 4 and the circuit chip 8 are bonded through a plurality of bumps, and the bonded structure is packaged, including:
s801, bonding a vacuum bonding cover plate 4 and a circuit chip 8 through a plurality of first protruding points 6, wherein the first protruding points 6 are arranged between conductive electrodes on the first through holes 5 and conductive electrodes 7 corresponding to the positions of the first through holes 5 on the circuit chip 8;
s802, bonding the circuit chip 8 and the substrate 15 through a plurality of second bumps 10, wherein the second bumps 10 are arranged between the conductive electrode 7 on one end of the second through holes 9 and the substrate 15; a plurality of packaging balls 16 are arranged on the back surface of the substrate 15 opposite to one surface of the circuit chip 8;
s803, packaging the packaging shell 13 with the ventilation port on the substrate 15, and completely packaging.
Optionally, as shown in diagrams (b) - (g) in fig. 7, a resonant pressure sensing structural layer is prepared on the pretreated substrate layer, specifically including:
s201, preparing a bottom layer 2 of a resonant pressure sensing structure layer on the pretreated substrate layer 1, and etching a region corresponding to a pressure sensitive film 11 and a region corresponding to a resonant structure in the top layer 3 on the bottom layer 2; the resonant structure comprises a main resonant beam 32, two torsion beams 35, two connection beams 36, two support beams 37.
Specifically, the material of the bottom layer 2 includes an insulating material such as silicon dioxide, silicon nitride, aluminum oxide or titanium oxide, and the specific material is determined according to practical situations, which is not limited in the embodiments of the present invention, and only examples are provided for reference, for example, silicon dioxide is used as the bottom layer 2.
Specifically, when the material of the bottom layer 2 is silicon dioxide and the material of the substrate layer 1 is silicon, the manner of preparing the bottom layer 2 includes: a layer of silicon dioxide is deposited or the surface of the substrate layer 1 is oxidized to form a layer of silicon dioxide.
S202, preparing a sacrificial layer on the etched area, and flattening the sacrificial layer to enable the sacrificial layer to be consistent with the bottom layer 2 in height.
Specifically, the sacrificial layer is planarized to remove a portion higher than the underlayer 2.
S203, preparing a top layer 3 on the bottom layer 2 and the sacrificial layer, and etching an excitation electrode 31, a main resonance beam 32, a sensing electrode 33, two stress transfer structures 34, two torsion beams 35, two connection beams 36, two support beams 37 and a bias electrode 38 on the top layer 3.
Specifically, the manner in which the top layer 3 is prepared includes deposition, and the material of the top layer 3 includes doped polysilicon or doped monocrystalline silicon.
S204, removing the sacrificial layer to suspend the resonant structure.
Specifically, the sacrifice layer is removed so that the main resonance beam 32, the two torsion beams 35, the two connection beams 36, and the two support beams 37 are in a suspended state.
In a specific embodiment, the pressure sensitive membrane 11 has a length of 1300 μm, a width of 2200 μm and a thickness of 30 μm; the material of the bottom layer 2 is silicon dioxide, and the thickness of the bottom layer 2 is 10 mu m; the thickness of the top layer 3 is 100 μm; the length of the main resonance beam 32 is 1600 μm and the width is 20 μm; the length of the support beam 37 is 200 μm and the width is 1000 μm; the connecting beam 36 has a length of 250 μm and a width of 200 μm; the stress transfer structure 34 has a length of 500 μm and a width of 1000 μm; the torsion beam 35 has a length of 50 μm and a width of 600 μm; the elongated opening in the stress transfer structure 34 is 50 μm in length and 600 μm in width.
Specifically, the dimensions of each component in the resonant pressure sensor according to the embodiment of the present invention are determined according to practical situations, and the embodiment of the present invention is not limited, but only provided for reference.
It should be noted that, when the dimensions of the components in the resonant pressure sensor are changed, the structure of the resonant pressure sensor changes accordingly.
Further, in order to secure a small volume of the resonant pressure sensor, the length of the main resonance beam 32 may be 1000 μm to 3000 μm, and the area of the pressure sensitive film 11 may be 800 μm×1800 μm to 2000 μm×2400 μm.
Specifically, the sensitivity of the resonant pressure sensor is maximized when the torsion beam 35 is spaced 50 μm from the edge of the pressure sensitive film 11, and at this time, as shown in fig. 9, the simulation result of the resonant pressure sensor is that within 0kPa to 3800kPa, the resonance frequency decreases with increasing pressure, but the sensitivity gradually increases with increasing pressure, so that the linearity becomes poor at high pressure.
Specifically, in the case of low pressure, as shown in fig. 10, the simulation result of the resonant pressure sensor, the sensitivity of which is excellent in linearity at low pressure, the sensitivity is 9.6Hz/kPa, can be applied to high-precision pressure measurement, and when the length of the pressure sensitive film 11 is larger, higher sensitivity can be obtained.
The embodiment of the invention has the following beneficial effects: the embodiment of the invention provides a resonant pressure sensor based on a silicon through hole technology, which comprises a substrate layer, a resonant pressure sensing structural layer, a vacuum bonding cover plate, a plurality of through holes, a plurality of protruding points, a circuit chip, a substrate, a packaging ball, a packaging shell, an air vent and an air permeable diaphragm, wherein the substrate layer is arranged on the substrate layer; the top layer of the resonant pressure sensing structural layer comprises an excitation electrode, a main resonant beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a bias electrode; the substrate layer includes two pressure sensitive films therein; in the resonant pressure sensor provided by the embodiment of the invention, the two pressure sensitive films and the main resonance beam form a structure that the double pressure sensitive films are coupled with the two ends of the main resonance beam, so that the gas pressure acts on the pressure sensitive films to cause deformation, and the stress change is transmitted to the main resonance beam, so that a changed electric signal is generated by an excitation electrode and a sensing electrode coupled with the main resonance beam and transmitted to a circuit chip through a through hole, the signal delay is reduced, the capacitance, the inductance and the power consumption are reduced, the precision sensitivity of the resonant pressure sensor can be further improved, and the application range of the resonant pressure sensor is enlarged; according to the resonant pressure sensor, the substrate layer, the resonant pressure sensing structural layer and the circuit chip are stacked in the vertical direction, connection and signal transmission between the resonant pressure sensing structural layer and the circuit chip are realized through the through holes, and the volume of the packaged resonant pressure sensor is greatly reduced; the size of each component of the resonant pressure sensor is smaller than 1cm, and the resonant pressure sensor can be used for high-precision pressure measurement in various fields requiring the size of the miniature pressure sensor. The embodiment of the invention also provides a preparation method of the resonant pressure sensor based on the through silicon via technology, and the conductive material filled in the through holes is metal with good conductivity, low electromigration and low cost, so that the preparation difficulty and the preparation cost are reduced; the through hole is prepared by adopting the silicon through hole technology, and has the advantages of reducing the packaging size, shortening the interconnection length between chips, realizing high-density integration, reducing transmission delay noise, reducing chip loss and improving thermal expansion reliability.
While the preferred embodiment of the present invention has been described in detail, the invention is not limited to the embodiment, and various equivalent modifications and substitutions can be made by those skilled in the art without departing from the spirit of the invention, and these modifications and substitutions are intended to be included in the scope of the present invention as defined in the appended claims.
Claims (10)
1. The resonant pressure sensor based on the through silicon via technology is characterized by comprising a substrate layer, a resonant pressure sensing structural layer, a vacuum bonding cover plate, a plurality of through holes, a plurality of protruding points, a circuit chip, a substrate, a packaging ball and a packaging shell; wherein,
the substrate layer is used for supporting the resonant pressure sensing structural layer; wherein the substrate layer comprises two pressure sensitive films for transmitting pressure;
the resonant pressure sensing structural layer is used for sensing the pressure and generating corresponding electric signals; the resonant pressure sensing structure layer comprises a bottom layer and a top layer, wherein the top layer comprises an excitation electrode, a main resonance beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a biasing electrode;
the vacuum bonding cover plate is used for protecting the resonant pressure sensing structural layer and reducing interference of the outside on the resonant pressure sensing structural layer;
the through hole is used for leading out an electrode of the resonant pressure sensing structural layer or leading out a signal of the circuit chip;
the salient points are used for enabling the resonant pressure sensing structural layer to be electrically connected with the circuit chip or enabling the circuit chip to be electrically connected with the substrate;
the circuit chip is used for converting the electric signal into a pressure value measured by the resonant pressure sensor;
the substrate is used for transmitting signals output by the circuit chip;
the packaging ball is used as an input pin or an output pin of the resonant pressure sensor;
the packaging shell is used for protecting the resonant pressure sensor; the packaging shell comprises a ventilation opening and a ventilation diaphragm, wherein the ventilation opening is used for enabling external fluid to pass through; the breathable diaphragm is used for isolating impurities while allowing external fluid to pass through.
2. The through silicon via technology based resonant pressure sensor of claim 1, wherein the bottom layer is disposed on the substrate layer and the top layer is disposed on the bottom layer; the main resonance beam is located between the excitation electrode and the sensing electrode, and two ends of the main resonance beam are sequentially provided with: the support beam, the connection beam, the torsion beam, and the stress transfer structure; the bias electrode is constituted by the portions of the top layer other than the excitation electrode, the main resonance beam, the sensing electrode, the stress transmitting structure, the torsion beam, the connection beam, and the support beam.
3. The through silicon via technology based resonant pressure sensor of claim 2, wherein the primary resonant beam, the torsion beam, the connection beam, and the underlying portions below the support beams are removed, the primary resonant beam, the two torsion beams, the two connection beams, and the two support beams being in a suspended state.
4. The through-silicon via technology based resonant pressure sensor of claim 2, wherein the main resonant beam, the two torsion beams, the two connection beams, the two support beams, and the bias electrode are of an integrated structure such that the main resonant beam, the two torsion beams, the two connection beams, and the two support beams are in a suspended state.
5. The through-silicon via technology based resonant pressure sensor of claim 2, wherein the excitation electrode and the sensing electrode are peripherally provided with grooves that follow the outline of the excitation electrode and the outline of the sensing electrode; the bias electrode is separated from the excitation electrode by the trench and the bias electrode is separated from the sense electrode by the trench.
6. The through silicon via technology based resonant pressure sensor of claim 2, wherein two of the stress transfer structures are provided with a first opening on a side proximate to the primary resonant beam; the torsion beam is disposed between the first opening and the connection beam.
7. The through silicon via technology based resonant pressure sensor of claim 1, wherein the substrate layer further comprises two second openings; wherein a portion of the substrate layer is removed to form the second opening, the opening direction of the second opening is a direction away from the resonant pressure sensing structural layer, and the bottom of the second opening is close to the resonant pressure sensing structural layer; the portion of the substrate layer remaining after the removal of the substrate layer constitutes the pressure sensitive membrane.
8. The through-silicon via technology based resonant pressure sensor of claim 1, wherein the substrate layer and the resonant pressure sensing structure layer form a laminate structure, the torsion beam and the stress transfer structure being located within corresponding regions of the pressure sensitive film in the resonant pressure sensing structure layer.
9. A method for manufacturing a resonant pressure sensor based on through silicon via technology, characterized in that it is used for manufacturing a resonant pressure sensor based on through silicon via technology as claimed in any one of claims 1-8, comprising:
preprocessing the substrate layer;
preparing a resonant pressure sensing structural layer on the pretreated substrate layer; the resonant pressure sensing structure layer comprises a bottom layer and a top layer, wherein the top layer comprises an excitation electrode, a main resonance beam, a sensing electrode, two stress transmission structures, two torsion beams, two connecting beams, two supporting beams and a biasing electrode;
etching two second openings on the substrate layer to obtain two pressure sensitive films;
preparing a vacuum bonding cover plate, and preparing a plurality of first through holes in the vacuum bonding cover plate;
vacuum bonding is carried out on the vacuum bonding cover plate and the resonant pressure sensing structural layer;
filling a plurality of first through holes with conductive materials, and preparing a plurality of conductive electrodes on the surfaces of the plurality of first through holes;
preparing a plurality of second through holes in a circuit chip, and preparing a plurality of conductive electrodes on two sides of the circuit chip;
and bonding the vacuum bonding cover plate and the circuit chip through a plurality of protruding points, and packaging the bonded structure to obtain the resonant pressure sensor based on the through silicon via technology.
10. The method for manufacturing a resonant pressure sensor based on through silicon via technology according to claim 9, wherein the manufacturing a resonant pressure sensing structure layer on the pretreated substrate layer specifically comprises:
preparing a bottom layer of the resonant pressure sensing structure layer on the pretreated substrate layer, and etching a region corresponding to the pressure sensitive film and a region corresponding to the resonant structure in the top layer on the bottom layer; the resonance structure comprises the main resonance beam, two torsion beams, two connecting beams and two supporting beams;
preparing a sacrificial layer on the etched area, and flattening the sacrificial layer to ensure that the height of the sacrificial layer is consistent with that of the bottom layer;
preparing the top layer on the bottom layer and the sacrificial layer, and etching the excitation electrode, the main resonance beam, the sensing electrode, the two stress transfer structures, the two torsion beams, the two connecting beams, the two supporting beams and the biasing electrode on the top layer;
and removing the sacrificial layer to suspend the resonant structure.
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