CN117637446A - Semiconductor device manufacturing method and semiconductor device - Google Patents
Semiconductor device manufacturing method and semiconductor device Download PDFInfo
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- CN117637446A CN117637446A CN202410111047.9A CN202410111047A CN117637446A CN 117637446 A CN117637446 A CN 117637446A CN 202410111047 A CN202410111047 A CN 202410111047A CN 117637446 A CN117637446 A CN 117637446A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 113
- 238000011049 filling Methods 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 64
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 239000004952 Polyamide Substances 0.000 claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 15
- 229920002647 polyamide Polymers 0.000 claims abstract description 15
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 44
- 230000008569 process Effects 0.000 claims description 32
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 73
- 239000000126 substance Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- -1 conventionally Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Abstract
The invention discloses a semiconductor device manufacturing method and a semiconductor device, comprising the following steps: coating polyamic acid on the surface of the wafer with the grooves to form a filling layer, wherein the filling layer fills all the grooves on the wafer; removing the part of the filling layer outside the groove to expose the upper surface of the wafer; coating a photoresist layer on the surface of the wafer; photoetching a required pattern on the photoresist layer; and developing to remove the redundant photoresist material and the polyamide acid material covered by the removed photoresist material. The scheme can avoid the problems of bubbles, residual photoresist and the like existing when the photoresist is directly used for filling the deep groove.
Description
Technical Field
The present disclosure relates to the field of integrated circuit manufacturing, and more particularly, to a method for manufacturing a semiconductor device and a semiconductor device.
Background
In the semiconductor manufacturing process, doping other ions into the material at the bottom of a part of the trench to change the characteristics of the material, conventionally, coating photoresist on the surface of a wafer to form a photoresist layer; then, photoetching a required pattern on the photoresist layer by a photoetching technology to change the chemical property of the photoresist filled in the part of the groove to be doped; removing the photoresist by a developing technology and cleaning to expose the grooves to be doped, wherein the rest grooves are still covered by the photoresist layer; the portions of the wafer that need to be doped can then be implanted with the desired ions individually.
However, when manufacturing semiconductor products such as discrete devices, the depth of the grooves on the wafer is deeper, due to poor flowing property of photoresist, bubbles are easy to remain at the bottoms of the grooves after photoresist coating, and the photoetching materials are swelled upwards by thermal expansion of the bubbles in the photoetching process, so that cracks are formed in part of the grooves which are not required to be doped originally, ions are easy to be injected into the grooves from the cracks in the doping process, and the yield of the products is affected. In addition, the photoresist to be removed can be removed by the developing solution after being fully irradiated by ultraviolet light and changing chemical properties, when the depth of the groove is deeper, the photoresist at the bottom of the groove is difficult to be fully irradiated by ultraviolet light, and finally a small amount of photoresist which cannot react with the developing solution is remained at the bottom of the groove during development, and the part of photoresist can form obstruction to injected ions to influence the doping effect.
Disclosure of Invention
The aim of the embodiment of the invention is that: a semiconductor device manufacturing method and a semiconductor device are provided, which can solve the above problems in the prior art.
In order to achieve the above purpose, the present application adopts the following technical scheme:
in one aspect, a method for manufacturing a semiconductor device is provided, including the steps of:
coating polyamic acid on the surface of the wafer with the grooves to form a filling layer, wherein the filling layer fills all the grooves on the wafer;
removing the part of the filling layer outside the groove to expose the upper surface of the wafer;
coating a photoresist layer on the surface of the wafer;
photoetching a required pattern on the photoresist layer;
and developing to remove the redundant photoresist material and the polyamide acid material covered by the removed photoresist material.
Optionally, after the filling layer is formed by coating, the filling layer is at least 2 μm higher than the upper surface of the wafer.
Optionally, after removing the portion of the filling layer located outside the trench, the upper surface of the filling layer is not more than 0.1 μm away from the upper surface of the wafer.
Optionally, the filling layer is formed by spin coating.
Optionally, the part of the filling layer outside the trench is removed by an etching back process.
Optionally, the process of developing to remove the excess photoresist material and the polyamic acid material covered by the removed photoresist material includes:
spraying deionized water on the surface of the photoresist layer;
spraying a developing solution on the surface of the photoresist layer;
after the developing solution fully reacts with the photoresist material and the polyamide acid material, cleaning the wafer by deionized water;
and spin-drying the cleaned wafer.
Optionally, the wafer with the grooves is manufactured through a photoetching process, and then the coating process of the filling layer is carried out.
Optionally, after removing the excess photoresist material and the polyamic acid material covered by the removed photoresist material by developing, ion implantation is performed to the exposed material at the bottom of the trench by a doping process.
Optionally, after doping, the wafer is soaked in a photoresist remover, or the photoresist remover is sprayed on the surface of the wafer, after the photoresist remover fully reacts with the photoresist material and the polyamide acid material, the wafer is cleaned by deionized water, and then the wafer after cleaning is dried.
In another aspect, a semiconductor device fabricated by the above fabrication method is provided.
The beneficial effects of this application are: the invention provides a semiconductor device manufacturing method and a semiconductor device, wherein before a photoresist layer is coated, polyamide acid is used for filling all grooves on the surface of a wafer, so that the coated photoresist material does not need to be filled at the bottom of the grooves, and compared with photoresist, the polyamide acid has better fluidity, can fill the grooves more easily, and is not easy to store bubbles in the grooves; in addition, the polyamic acid can directly react with the developing solution, and when the photoresist layer on the surface is removed during development, the polyamic acid in the groove can contact with the developing solution to carry out chemical reaction, so that the purpose of completely removing the filling material in the groove is realized. Therefore, the scheme can avoid the problems of bubbles, residual photoresist and the like existing when the photoresist is directly used for filling the deep trench.
Drawings
The present application is described in further detail below with reference to the drawings and examples.
FIG. 1 is a flow chart of a conventional semiconductor manufacturing process;
fig. 2 is a process flow diagram of a method for fabricating a semiconductor device according to an embodiment of the present application;
FIG. 3 is a schematic view of a wafer prior to application of a filler layer according to an embodiment of the present application;
fig. 4 is a schematic diagram of a wafer after a photoresist layer is coated according to an embodiment of the present application.
In the figure:
1. a wafer; 11. a groove; 2. a filling layer; 3. and a photoresist layer.
Detailed Description
In order to make the technical problems solved, the technical solutions adopted and the technical effects achieved by the present application more clear, the technical solutions of the embodiments of the present application are described in further detail below, and it is obvious that the described embodiments are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, unless explicitly stated and limited otherwise, the terms "connected," "secured" and "fixed" are to be construed broadly, as for example, they may be fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
Referring to fig. 1, in fabricating semiconductor products such as discrete devices, the depth of the trench on the wafer is deep, resulting in the following drawbacks in the conventional semiconductor fabrication:
1. because the photoresist has poor flowing property, bubbles are easy to remain at the bottom of the groove after the photoresist is coated, the photoresist in the groove which is not required to be doped originally is partially formed into cracks due to the fact that the bubbles are heated and expanded upwards in the photoetching process, ions are easy to be injected into the groove which is required to be closed originally from the cracks in the doping process, and finally the yield of products is affected.
2. The photoresist needs to be fully irradiated by ultraviolet light and can be removed by developing solution after the chemical property is changed, when the depth of the groove is deeper, the photoresist at the bottom of the groove is difficult to fully irradiate by ultraviolet light, and finally a small amount of photoresist which cannot react with the developing solution is remained at the bottom of the groove during development, and the part of photoresist can form obstruction to the injected ions, influence the doping effect and finally also influence the yield of products.
In view of the above-mentioned defects in the semiconductor manufacturing process, the present embodiment provides a method for manufacturing a semiconductor device, which avoids the occurrence of cracks in the photoresist to be kept before doping is required, and the photoresist to be removed remains in the trench by changing the process.
Referring to fig. 2, the method for manufacturing a semiconductor device of the present embodiment includes the steps of:
s1, providing a wafer 1 with a groove 11;
s2, coating polyamide acid on the surface of the wafer 1 with the grooves 11 to form a filling layer 2, wherein the filling layer 2 fills all the grooves 11 on the wafer 1; specifically, compared with the traditional photoresist, the polyamide acid has better fluidity, and the polyamide acid can be used for filling the groove 11 more quickly, so that the problem of air bubbles remained in the groove 11 after filling can be effectively avoided;
s3, removing the part of the filling layer 2 outside the groove 11 to expose the upper surface of the wafer 1; specifically, after the removal, only the upper surface of the filling layer 2 is required to be not higher than the upper surface of the wafer 1, and the upper surface of the removed filling layer 2 may be flush with the upper surface of the wafer 1, or the upper surface of the filling layer 2 may be slightly lower than the upper surface of the wafer 1;
s4, coating a photoresist layer 3 on the surface of the wafer 1; specifically, the photoresist layer 3 may be coated by using the same photoresist and the same coating method as those used in the existing semiconductor manufacturing process; the purpose of the coating photoresist layer 3 is to cover and protect the part of the structure to be covered;
s5, photoetching a required pattern on the photoresist layer 3; specifically, the photolithography process can change the chemical property of a part of the photoresist layer 3 to be removed, so that the part of the material can participate in chemical reaction with the developing solution, and the purpose of removing the part of the material and exposing the groove 11 originally covered by the part of the material is achieved;
s6, developing to remove redundant photoresist materials and polyamide acid materials covered by the removed photoresist materials; specifically, the inventors found that the polyamic acid can directly react with the existing developer without performing other treatments, so that after a part of the photoresist material on the surface layer is removed, the polyamic acid in the trench 11 covered by the part of the photoresist material can directly contact with the developer and react, and thus the purpose of completely removing the polyamic acid in the part of the trench 11 and completely exposing the part of the trench 11 can be achieved.
Specifically, in step S2 of the present embodiment, in order to ensure that all trenches 11 can be filled with polyamic acid, when coating to form the filling layer 2, the filling layer 2 needs to be higher than the upper surface of the wafer 1; after the filling layer 2 is formed by coating, if the photoresist is directly coated on the filling layer 2, the photoresist layer 3 cannot contact the surface of the wafer 1, and in the post-development process, the developing solution reacts with the polyamic acid located between the remaining photoresist layer 3 and the surface of the wafer 1, so that a gap is generated between the photoresist layer 3 and the surface of the wafer 1, and the firmness of the photoresist layer 3 is affected. Therefore, in step S3, the part of the filling layer 2 outside the trench 11 is removed before the photoresist layer 3 is coated, so that the upper surface of the wafer 1 is exposed, and then the photoresist layer 3 is coated, so that the photoresist layer 3 can be directly bonded to the surface of the wafer 1, and the photoresist layer 3 can be reliably bonded with the wafer 1.
In summary, according to the method for manufacturing a semiconductor device of the present embodiment, before coating the photoresist layer 3, the polyamic acid is used to fill all the trenches 11 on the surface of the wafer 1, so that the photoresist material to be coated does not need to be filled into the bottoms of the trenches 11, and compared with the photoresist, the polyamic acid has better fluidity, which is easier to fill the trenches 11 and is less prone to remain bubbles in the trenches 11; in addition, the polyamic acid can directly react with the developing solution, and when the photoresist layer 3 on the surface is removed during development, the polyamic acid in the groove 11 can contact with the developing solution to perform chemical reaction, so that the purpose of completely removing the filling material in the groove 11 is realized. Therefore, the scheme can avoid the problems of bubbles, residual photoresist and the like existing when the photoresist is directly used for filling the deep trench 11.
In one embodiment, in step S2, after the filling layer 2 is formed by coating, the filling layer 2 is at least 2 μm higher than the upper surface of the wafer 1.
Specifically, the filling thickness of the filling layer 2 is controlled to be at least 2 μm higher than the upper surface of the wafer 1, so that the filling layer 2 has enough surplus quantity, all the trenches 11 can be completely filled by the filling layer 2, and the problem of insufficient filling quantity of part of the trenches 11 is avoided.
In one embodiment, in step S3, after removing the portion of the filling layer 2 outside the trench 11, the upper surface of the filling layer 2 is not more than 0.1 μm from the upper surface of the wafer 1.
Specifically, the surface of the removed filling layer 2 is lower than the upper surface of the wafer 1 or is flush with the upper surface of the wafer 1. It is actually difficult to completely control the surface of the filling layer 2 to be flush with the upper surface of the wafer 1, and the filling layer 2 will generally be recessed downward relative to the upper surface of the wafer 1, i.e. a shallow trench will generally be formed above the filling layer 2, and then the photoresist material applied will fill into the trench. As can be seen from the foregoing description of the defects in the prior art, when the trench is too deep, the photoresist material at the bottom of the trench is difficult to be fully converted by ultraviolet light, and finally the photoresist material at the bottom which is not fully converted cannot react with the developer for removal. Therefore, the upper surface of the filling layer 2 is controlled within 0.1 μm from the upper surface of the wafer 1, so that the problem of residual photoresist after post-development caused by too deep grooves formed on the filling layer 2 can be avoided.
In one embodiment, the filling layer 2 is formed by spin coating.
The spin coating process can lead the polyamic acid to be evenly spread on the surface of the wafer 1, and the surface smoothness of the filling layer 2 after coating is good. In addition, the traditional photoresist coating generally adopts a spin coating process, namely, the coating of polyamide acid can be directly carried out by adopting the existing equipment and process, and the method has the advantage of low modification cost of a production line.
In an embodiment, the portion of the filling layer 2 outside the trench 11 is removed by an etch-back process.
The etching back is a common process for manufacturing the existing semiconductor, and the process is adopted to remove the part of the filling layer 2 outside the groove 11, so that the modification cost of the production line is lower. And the process is more beneficial to controlling the thickness of the removed filling layer 2, so that the problem of overlarge removal thickness of the filling layer 2 can be avoided.
In one embodiment, the process of developing to remove the excess photoresist material and the polyamic acid material covered by the removed photoresist material comprises:
spraying deionized water on the surface of the photoresist layer 3; the adhesion performance of the developing solution on the surface of the wafer 1 can be improved by spraying deionized water;
spraying a developing solution on the surface of the photoresist layer 3;
after the developing solution fully reacts with the photoresist material and the polyamide acid material, cleaning the wafer 1 by deionized water; the developing process can be stopped by using deionized water for flushing, and defect particles after developing are flushed;
spin-drying the cleaned wafer 1. The residual moisture on the wafer 1 is spun off to provide a clean surface wafer 1 for the subsequent doping process.
In one embodiment, the wafer 1 with the trenches 11 is fabricated by a photolithographic etching process, and then the filling layer 2 is coated.
Specifically, the trench 11 structure is processed on the wafer 1, which may directly adopt the existing process, specifically includes:
1. forming an oxidation protection layer on the surface of the silicon wafer through an oxidation process to obtain a wafer;
2. coating photoresist on the surface of the wafer;
3. patterning the photoresist layer to form a pattern corresponding to the trench by photolithography and development processes;
4. trenches 11 are etched in the wafer by an etching process.
In one embodiment, after the excess photoresist material is removed by development and the polyamic acid material covered by the removed photoresist material, ions are implanted into the exposed material at the bottom of the trench 11 by a doping process.
Post-development doping can alter the electrical properties of the material at the bottom of trench 11.
In one embodiment, after doping, the wafer 1 is soaked in a photoresist remover, or the photoresist remover is sprayed on the surface of the wafer 1, after the photoresist remover fully reacts with the photoresist material and the polyamide acid material, the wafer 1 is cleaned by deionized water, and then the cleaned wafer 1 is dried.
Also, the polyamic acid can directly react with the existing photoresist remover, so that the photoresist remover can directly remove the photoresist material and the polyamic acid which are not modified by ultraviolet light. Therefore, the polyamic acid adopted by the scheme is used as the filling material of the groove 11, and the traditional process of developing and removing photoresist is not required to be changed, and the original production process and production equipment are not required to be changed.
In another aspect, a semiconductor device fabricated by the above fabrication method is provided.
The semiconductor device manufactured by the manufacturing method has better doping quality and higher precision, so the semiconductor device has better performance.
In the description herein, it should be understood that the terms "upper," "lower," "left," "right," and the like are merely for convenience of description and to simplify the operation, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the application. Furthermore, the terms "first," "second," and the like, are used merely for distinguishing between descriptions and not for providing a special meaning.
In the description herein, reference to the term "one embodiment," "an example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in the foregoing embodiments, and that the embodiments described in the foregoing embodiments may be combined appropriately to form other embodiments that will be understood by those skilled in the art.
The technical principles of the present application are described above in connection with specific embodiments. These descriptions are provided only for the purpose of illustrating the principles of the present application and should not be construed as limiting the scope of the present application in any way. Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification without undue burden from the present disclosure.
Claims (10)
1. A method of fabricating a semiconductor device, comprising the steps of:
coating polyamic acid on the surface of the wafer with the grooves to form a filling layer, wherein the filling layer fills all the grooves on the wafer;
removing the part of the filling layer outside the groove to expose the upper surface of the wafer;
coating a photoresist layer on the surface of the wafer;
photoetching a required pattern on the photoresist layer;
and developing to remove the redundant photoresist material and the polyamide acid material covered by the removed photoresist material.
2. The method of manufacturing a semiconductor device according to claim 1, wherein after the filling layer is formed by coating, the filling layer is at least 2 μm higher than the upper surface of the wafer.
3. The method of manufacturing a semiconductor device according to claim 1, wherein after removing a portion of the filling layer outside the trench, an upper surface of the filling layer is not more than 0.1 μm from an upper surface of the wafer.
4. The method of manufacturing a semiconductor device according to claim 1, wherein the filling layer is formed by spin coating.
5. The method of manufacturing a semiconductor device according to claim 1, wherein a portion of the filling layer outside the trench is removed by an etch-back process.
6. The method of manufacturing a semiconductor device according to claim 1, wherein the developing to remove the excess photoresist material and the polyamic acid material covered by the removed photoresist material comprises:
spraying deionized water on the surface of the photoresist layer;
spraying a developing solution on the surface of the photoresist layer;
after the developing solution fully reacts with the photoresist material and the polyamide acid material, cleaning the wafer by deionized water;
and spin-drying the cleaned wafer.
7. The method of manufacturing a semiconductor device according to claim 1, wherein the wafer with the trench is manufactured by a photolithography etching process, and then a coating process of the filling layer is performed.
8. The method of claim 1, wherein ions are implanted into the exposed trench bottom material by a doping process after the photoresist material is removed by development and the polyamic acid material covered by the removed photoresist material.
9. The method according to claim 8, wherein after doping, the wafer is immersed in a photoresist remover, or the photoresist remover is sprayed onto the surface of the wafer, after the photoresist remover fully reacts with the photoresist material and the polyamic acid material, the wafer is cleaned with deionized water, and the cleaned wafer is spin-dried.
10. A semiconductor device fabricated by the fabrication method of any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202410111047.9A CN117637446A (en) | 2024-01-26 | 2024-01-26 | Semiconductor device manufacturing method and semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410111047.9A CN117637446A (en) | 2024-01-26 | 2024-01-26 | Semiconductor device manufacturing method and semiconductor device |
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| CN101802711A (en) * | 2007-07-30 | 2010-08-11 | 布鲁尔科技公司 | The material that is used for photolithographic non-covalently crosslinkable |
| US20160329413A1 (en) * | 2013-06-21 | 2016-11-10 | Chip Integration Tech. Co., Ltd. | Structure of Trench-Vertical Double Diffused MOS Transistor and Method of Forming the Same |
| CN114613668A (en) * | 2022-05-16 | 2022-06-10 | 广州粤芯半导体技术有限公司 | Preparation method of semiconductor structure |
| CN114613667A (en) * | 2022-05-16 | 2022-06-10 | 广州粤芯半导体技术有限公司 | Preparation method of semiconductor structure |
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- 2024-01-26 CN CN202410111047.9A patent/CN117637446A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101802711A (en) * | 2007-07-30 | 2010-08-11 | 布鲁尔科技公司 | The material that is used for photolithographic non-covalently crosslinkable |
| US20160329413A1 (en) * | 2013-06-21 | 2016-11-10 | Chip Integration Tech. Co., Ltd. | Structure of Trench-Vertical Double Diffused MOS Transistor and Method of Forming the Same |
| CN114613668A (en) * | 2022-05-16 | 2022-06-10 | 广州粤芯半导体技术有限公司 | Preparation method of semiconductor structure |
| CN114613667A (en) * | 2022-05-16 | 2022-06-10 | 广州粤芯半导体技术有限公司 | Preparation method of semiconductor structure |
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