CN117594695A - Method for improving light absorption efficiency of thin film solar cell in large area at low cost - Google Patents
Method for improving light absorption efficiency of thin film solar cell in large area at low cost Download PDFInfo
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- CN117594695A CN117594695A CN202311546451.0A CN202311546451A CN117594695A CN 117594695 A CN117594695 A CN 117594695A CN 202311546451 A CN202311546451 A CN 202311546451A CN 117594695 A CN117594695 A CN 117594695A
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- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000031700 light absorption Effects 0.000 title claims abstract description 17
- 210000004027 cell Anatomy 0.000 claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 18
- 210000004492 nuclear pore Anatomy 0.000 claims abstract description 12
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims abstract description 5
- 239000007924 injection Substances 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 2
- -1 polyethylene terephthalate Polymers 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 229920003023 plastic Polymers 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 6
- 238000009940 knitting Methods 0.000 abstract description 2
- 210000002268 wool Anatomy 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000004038 photonic crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for improving the light absorption efficiency of a thin film solar cell with low cost and large area, which comprises the steps of carrying out particle irradiation treatment on an organic thin film to form particle irradiation damage paths in the organic thin film; then, performing selective wet etching to the damage path to form circular holes; preparing a nuclear pore membrane meeting the target requirements of pore diameter and pore density by adjusting etching time and particle injection amount respectively; the nuclear pore film is used as an etching mask, and the pattern is transferred to the surface of a solar thin film battery or a transparent electrode deposited on a substrate through dry etching, so that the sub-micron scale surface roughening of a carrier transmission layer of the thin film solar battery is finally realized; the beneficial effects are as follows: the method for preparing the thin film solar cell can lead the thin film solar cell to obtain an ideal surface random knitting wool light trapping structure, has low cost, simple process steps and good repeatability, and is suitable for large-area application; the process has good regulation and control, can realize coarsening morphology with characteristic dimension of 100 nm-mu m magnitude, and can remarkably improve the light absorption efficiency of the thin film solar cell in the whole sunlight wavelength range.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectron physics and devices, in particular to a method for improving the light absorption efficiency of a thin film solar cell with low cost and large area.
Background
Thin film solar cells, which are being closely focused by industry and academia to be continuously developed by virtue of their inherent advantages in terms of theoretical limit, production cost, flexible application and the like, are another type of mainstream solar cells besides the conventional silicon-based amorphous and monocrystalline solar cells. The performance bottleneck of the thin film solar cell is largely due to the self-structural limitation, and the thickness of the absorption layer is generally within 2 μm. How to improve the light absorption efficiency of the thin absorption layer and further obtain high photoelectric conversion efficiency is one of the core technical problems faced by the research and development work of the thin film solar cell. At present, the most effective solution is to limit the incident light in an absorption layer by adopting a light trapping structure, prolong the effective optical path of the incident light transmitted in the cell and enhance the absorption, thereby greatly improving the efficiency of the thin film solar cell.
Currently, light trapping (light trapping) structures mainly comprise two major types, namely a surface random texture and a surface periodic structure.
The surface random texture is, as the name suggests, a tiny and dense microstructure (fine coarsening) is formed on the surface. There are generally two general types of methods for preparing surface random texture structures: (1) Firstly, adopting various deposition methods to deposit transparent conductive oxide (transparent electrode) on a substrate, coarsening the transparent conductive oxide by wet etching, and finally, depositing a thin film battery material on the substrate with the coarsened transparent electrode. (2) Coating submicron-scale oxide small sphere particles on the surface of the film battery by adopting a spin coating method, or evaporating a metal film to form submicron-scale metal particles by combining high-temperature annealing treatment, and then carrying out dry etching on the surface of the film battery by taking the particles as etching masks. Both have respective defects, and the former has poor controllability; the latter has a problem of poor operability, poor repeatability, and difficulty in large-area application.
The surface periodic structure mainly comprises a one-dimensional photonic crystal (surface wire grid), a two-dimensional photonic crystal (surface regularly arranged holes) and the like. Theoretically, when the energy of an incident photon is smaller than the forbidden bandwidth of a photonic crystal of such a structure, the incident photon is trapped inside the cell until it is absorbed. Such surface microstructures are typically prepared by dry etching, while the masks used are prepared by nanoimprint, interference lithography, and the like. A fatal problem of such a structure is that the large-area production cost is too expensive and is not suitable for mass-production of solar cells for use. In addition, the photonic crystal of a specific period is effective only for photon absorption in a specific wavelength range, cannot cover sunlight with a large wavelength span, and has an inherent disadvantage.
Disclosure of Invention
The invention aims to provide a method for improving the light absorption efficiency of a thin film solar cell with low cost and large area so as to solve the problems in the prior art.
In order to achieve the above object, the present invention provides a method for improving the light absorption efficiency of a thin film solar cell with low cost and large area, comprising the following steps:
s1, treating an organic film by adopting a particle irradiation mode to form a particle irradiation damage path in the film;
s2, selectively etching particle irradiation damage paths in the film by adopting a wet etching method to form circular holes in random fractal arrangement in the film to obtain a nuclear pore film;
and S3, forming etching patterns on the surface of the carrier transmission layer of the thin film solar cell or the transparent electrode layer deposited on the substrate by adopting a dry etching method and taking the nuclear pore film as an etching mask, wherein the etching patterns are used for improving the light absorption efficiency of the cell.
The invention has the technical effects and advantages that: the method for preparing the thin film solar cell can lead the thin film solar cell to obtain an ideal surface random knitting wool light trapping structure, has low cost, simple process steps and good repeatability, and is suitable for large-area application; the process has good regulation and control, can realize coarsening morphology with characteristic dimension of 100 nm-mu m magnitude, and can remarkably improve the light absorption efficiency of the thin film solar cell in the whole sunlight wavelength range.
Drawings
FIG. 1 is a flow chart of the process steps of the present invention;
FIG. 2 is an electron scanning micrograph of a nuclear track membrane;
fig. 3 is a schematic diagram of a process flow of preparing a nuclear pore membrane and a process flow of preparing a submicron optical trap structure on the surface of a carrier transmission layer.
Description of the embodiments
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a method for improving the light absorption efficiency of a thin film solar cell with low cost and large area, which is shown in figures 1-3, and specifically comprises the following steps:
step 1, carrying out irradiation treatment on an organic film by adopting a particle accelerator to form particle irradiation damage paths in the film, wherein the irradiation particles can be electrons, protons or heavy ions with various energies, the particle injection quantity damage path density is determined by the particle injection quantity, and the particle irradiation damage path density is 10 percent according to the requirement of a subsequent hole density target 6 -10 10 /cm 2 The particle injection amount is adjusted in a range. The organic film is polyethylene terephthalate (PET) film with thickness of 1-10 μm;
and 2, putting the PET film after particle irradiation into NaOH solution, and selectively wet etching the damage path to form round holes, thereby preparing the nuclear pore film. The aperture is determined by the etching time, and the aperture is controlled to be in the range of 200-800 nm by adjusting the etching time. The mass concentration of the NaOH solution ranges from 5% to 30%, and besides the NaOH solution, KOH solution or a mixed solution of the NaOH solution and the KOH solution can also be used;
step 3, cleaning and drying the PET nuclear pore membrane subjected to wet etching;
and 4, directly attaching the PET nuclear pore membrane serving as a mask plate to the surface of a carrier transmission layer of the uncut thin film solar cell, performing dry etching by adopting methods such as Reactive Ion Etching (RIE) or inductively coupled plasma etching (ICP), and transferring the nuclear pore membrane pattern to the surface to form a submicron-scale coarsening structure, wherein the etching depth is generally 50-300 nm.
And 5, continuing the normal process flow to finish the preparation of the thin film solar cell.
Finally, it should be noted that: the foregoing description is only illustrative of the preferred embodiments of the present invention, and although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described, or equivalents may be substituted for elements thereof, and any modifications, equivalents, improvements or changes may be made without departing from the spirit and principles of the present invention.
Claims (7)
1. A method for improving the light absorption efficiency of a thin film solar cell with low cost and large area, which is characterized by comprising the following steps:
s1, treating an organic film by adopting a particle irradiation mode to form a particle irradiation damage path in the film;
s2, selectively etching particle irradiation damage paths in the film by adopting a wet etching method to form circular holes in random fractal arrangement in the film to obtain a nuclear pore film;
and S3, forming etching patterns on the surface of the carrier transmission layer of the thin film solar cell or the transparent electrode layer deposited on the substrate by adopting a dry etching method and taking the nuclear pore film as an etching mask, wherein the etching patterns are used for improving the light absorption efficiency of the cell.
2. The method for improving the light absorption efficiency of the thin film solar cell with low cost and large area according to claim 1, wherein the particle irradiation treatment mode is to irradiate the organic thin film on a particle accelerator to form a large number of particle irradiation damage paths in the film, and the irradiation particles can be electrons, protons or heavy ions with various energies; the organic film is made of polyethylene terephthalate plastic and has a thickness of 100-nm-10 μm.
3. The method of claim 1, wherein the density of the particle irradiation damage path is determined by the particle implantation amount, and is 10 according to the target requirement of the subsequent hole density 6 -10 10 /cm 2 The particle injection amount is adjusted in a range.
4. The method for improving the light absorption efficiency of the thin film solar cell with low cost and large area according to claim 1, wherein the aperture of the hole obtained by the wet etching is determined by etching time, the aperture can be changed between 200 and 800 and nm, and the etching time is adjusted according to the target requirement of the aperture.
5. A method of increasing the light absorption efficiency of a thin film solar cell at a low cost and in a large area according to claim 3, wherein the solution used in the wet etching is one of NaOH solution, KOH solution or a mixture thereof, and the mass concentration of the NaOH solution is in the range of 5% -30%.
6. The method for improving the light absorption efficiency of the thin film solar cell with a large area at low cost according to claim 1 or 4, wherein the thin film after wet etching is cleaned and dried.
7. The method of claim 1, wherein the nuclear pore film is attached to a carrier transport layer of an uncut thin film solar cell or a surface of a transparent electrode layer deposited on a substrate, and the pattern is transferred to the surface by dry etching, wherein the etching depth is generally 50-300 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311546451.0A CN117594695A (en) | 2023-11-20 | 2023-11-20 | Method for improving light absorption efficiency of thin film solar cell in large area at low cost |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311546451.0A CN117594695A (en) | 2023-11-20 | 2023-11-20 | Method for improving light absorption efficiency of thin film solar cell in large area at low cost |
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| Publication Number | Publication Date |
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| CN117594695A true CN117594695A (en) | 2024-02-23 |
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| CN202311546451.0A Pending CN117594695A (en) | 2023-11-20 | 2023-11-20 | Method for improving light absorption efficiency of thin film solar cell in large area at low cost |
Country Status (1)
| Country | Link |
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| CN (1) | CN117594695A (en) |
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2023
- 2023-11-20 CN CN202311546451.0A patent/CN117594695A/en active Pending
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