CN117577761A

CN117577761A - LED light-emitting device structure and manufacturing method thereof

Info

Publication number: CN117577761A
Application number: CN202311612793.8A
Authority: CN
Inventors: 李�昊; 李碧波; 吴瑕; 李九单; 林远彬
Original assignee: Hubei Xinying Photoelectric Co ltd
Current assignee: Hubei Xinying Photoelectric Co ltd
Priority date: 2023-11-29
Filing date: 2023-11-29
Publication date: 2024-02-20

Abstract

The application relates to an LED light emitting device structure and a manufacturing method thereof, wherein the LED light emitting device structure comprises: a lower substrate including a glass substrate, the top surface of the glass substrate being covered with a black insulating layer; the upper substrate comprises a transparent conductive film and a lamp bead packaging layer covering the top surface of the transparent conductive film; the LED chips are arranged in a plurality, and the LED chips are arranged between the lower substrate and the upper substrate in an array manner; and the light scattering colloid is filled between the lower substrate and the upper substrate. The LED light-emitting device structure is characterized in that the glass substrate is arranged on the lower substrate, the black insulating layer is covered on the top surface of the glass substrate, the black insulating layer enables the front surface of the LED light-emitting device to be completely black, white spots can be seen in a short distance, blackness and contrast are improved, and the display effect of a use scene is seen in a short distance.

Description

LED light-emitting device structure and manufacturing method thereof

Technical Field

The application relates to the technical field of LED light-emitting device packaging, in particular to an LED light-emitting device structure and a manufacturing method thereof.

Background

The common LED lamp beads are composed of RGB three-color light LED chips, when the LED lamp beads are smaller in size and smaller in dot spacing, the RGB chips are distributed more and more densely, and the requirement on the mass transfer of the RGB chips is gradually increased. Because the surface of the lamp bead emits light and cannot be blacked, white spots can be always seen on the surface of the lamp bead, and the blackness of the lamp bead is affected. And under the condition that the size of the lamp bead is smaller, the duty ratio of the light emitting surface of the chip on the surface of the lamp bead is larger and larger, and under the use scene of close-range viewing, the blackness and the contrast of the display screen can be greatly influenced by the lamp bead with white spots on the surface.

Disclosure of Invention

The embodiment of the application provides an LED light-emitting device structure and a manufacturing method thereof, which are used for solving the problem that the blackness and contrast of a display screen can be greatly influenced under the use scene of close-range viewing because the lamp beads with the luminous surfaces in the related technologies can not be blacked.

A first aspect of the embodiments of the present application provides an LED light emitting device structure, including:

the lower substrate comprises a glass substrate, and the top surface of the glass substrate is covered with a black insulating layer;

the upper substrate comprises a transparent conductive film and a lamp bead packaging layer covering the top surface of the transparent conductive film;

the LED chips are arranged in a plurality, and the LED chips are arranged between the lower substrate and the upper substrate in an array manner;

and the light scattering colloid is filled between the lower substrate and the upper substrate. In some embodiments: the plurality of LED wafers comprise a red LED wafer, a green LED wafer and a blue LED wafer;

the LED wafer comprises a P-type semiconductor and an N-type semiconductor which are oppositely arranged, and a light-emitting layer which is positioned between the P-type semiconductor and the N-type semiconductor and emits light to the periphery;

and one sides of the P-type semiconductor and the N-type semiconductor, which are far away from the light-emitting layer, are respectively provided with a conductive connecting layer.

In some embodiments: one end of the LED wafer is mutually attached and connected with the transparent conductive film through the conductive connecting layer, the other end of the LED wafer is mutually attached and connected with the black insulating layer through the conductive connecting layer, and the conductive connecting layer is black conductive metal.

In some embodiments: the lower substrate is provided with a plurality of first through holes which are respectively communicated with a plurality of LED wafers, and the lower substrate and the light scattering colloid are provided with second through holes which are communicated with the transparent conductive film;

the glass substrate is provided with an electrode pad which extends into the first through hole and is connected with the LED wafer, and a public pad which extends into the second through hole and is connected with the transparent conductive film.

In some embodiments: the COB device comprises a glass substrate, and is characterized by further comprising a COB substrate, wherein the COB substrate is positioned at the bottom of the glass substrate and is electrically connected with an electrode pad and a public pad on the glass substrate through pins to form the COB device.

In some embodiments: the LED driving IC chip is positioned at the bottom of the glass substrate and is electrically connected with the electrode pad and the public pad on the glass substrate through pins;

and pins are arranged on one surface of the LED drive IC chip, which is away from the glass substrate, and packaging colloid with exposed pins is filled between the LED drive IC chip and the glass substrate to form the LED lamp bead with the drive IC chip.

In some embodiments: the LED wafers are arranged between the lower substrate and the upper substrate in an equidistant array manner, and one surface of the lamp bead packaging layer, which faces away from the transparent conductive film, is a frosted surface.

A second aspect of the embodiments of the present application provides a method for manufacturing an LED light emitting device structure, where the method uses the LED light emitting device structure described in any one of the foregoing, and the method includes:

covering a lamp bead packaging layer on a release film base plate, and covering a transparent conductive film on the lamp bead packaging layer to prepare an upper substrate;

arranging a plurality of LED chips on the transparent conductive film in an array manner;

covering a black insulating layer on the top of the glass substrate, waiting for the black insulating layer to be solidified on the glass substrate, and further manufacturing a lower substrate;

mounting a lower substrate on the top of the upper substrate, and enabling a black insulating layer of the lower substrate to face the upper substrate and be mutually attached to a plurality of LED wafers;

injecting a light scattering colloid between the upper substrate and the lower substrate;

after the astigmatic gel is solidified, a plurality of first through holes communicated with a plurality of LED wafers and second through holes communicated with the transparent conductive film are formed on the lower substrate;

and depositing electrode pads extending into the first through holes and common pads extending into the second through holes on the glass substrate by metal deposition to obtain the LED light-emitting device.

In some embodiments: the method further comprises the steps of:

mounting an LED light-emitting device on a COB substrate;

and removing the release film bottom plate to form the COB device.

In some embodiments: the method further comprises the steps of:

mounting an LED driving IC chip at the bottom of the LED light emitting device;

filling packaging colloid between the LED drive IC chip and the glass substrate, and filling packaging colloid surrounding the LED drive IC chip around the LED drive IC chip;

and after the packaging colloid is solidified, removing the release film bottom plate to form the LED lamp bead with the driving IC chip.

The beneficial effects that technical scheme that this application provided brought include:

the embodiment of the application provides an LED light-emitting device structure and a manufacturing method thereof, because the LED light-emitting device structure is provided with a lower substrate, the lower substrate comprises a glass substrate, and the top surface of the glass substrate is covered with a black insulating layer; the upper substrate comprises a transparent conductive film and a lamp bead packaging layer covering the top surface of the transparent conductive film; the LED chips are arranged in a plurality, and the LED chips are arranged between the lower substrate and the upper substrate in an array manner; and the light scattering colloid is filled between the lower substrate and the upper substrate so as to fix the plurality of LED chips between the lower substrate and the upper substrate.

Therefore, the LED light-emitting device structure is provided with the glass substrate on the lower substrate, the black insulating layer is covered on the top surface of the glass substrate, the black insulating layer enables the front surface of the LED light-emitting device to be completely black, white spots can be seen in a short distance, blackness and contrast are improved, and the display effect of a use scene is seen in a short distance. The LED wafers are arranged between the lower substrate and the upper substrate in an array manner, are fixed between the lower substrate and the upper substrate through the light scattering colloid, and enable the LED light-emitting device to emit light on four sides after the LED wafers are lightened, so that the light mixing effect is better, and the effect of extremely low color difference on the four sides of the LED light-emitting device is achieved under the cooperation of the light scattering colloid.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a front view of a structure of an LED light emitting device according to an embodiment of the present application;

fig. 2 is a right side view of the structure of the LED light emitting device according to the embodiment of the present application;

fig. 3 is a bottom view of the structure of the LED light emitting device according to the embodiment of the present application;

fig. 4 is a front view of the structure of the COB device according to the embodiment of the application;

fig. 5 is a front view of the structure of an LED lamp bead with a driving IC chip according to the embodiment of the present application;

fig. 6 and fig. 7 are schematic structural diagrams of step 1 in the manufacturing method according to the embodiment of the present application;

FIG. 8 is a schematic structural diagram of step 2 in the manufacturing method according to the embodiment of the present application;

FIG. 9 is a schematic structural diagram of step 3 in the manufacturing method according to the embodiment of the present application;

FIG. 10 is a schematic structural diagram of step 4 in the manufacturing method according to the embodiment of the present application;

FIG. 11 is a front view of the structure of step 5 in the method of fabricating the embodiment of the present application;

FIG. 12 is a left side view of the structure of step 6 in the method of making an embodiment of the present application;

FIG. 13 is a front view of the structure of step 6 in the method of fabricating an embodiment of the present application;

FIG. 14 is a left side view of the structure of step 7 in the method of making an embodiment of the present application;

FIG. 15 is a front view of the structure of step 7 in the method of fabricating the embodiment of the present application;

FIG. 16 is a front view of the structure of step 8 in the method of fabricating the embodiment of the present application;

FIG. 17 is a front view of the structure of step 9 in the method of fabricating the embodiment of the present application;

fig. 18 is a schematic structural diagram of an LED chip according to an embodiment of the present application.

Reference numerals:

1. a glass substrate; 2. a black insulating layer; 3. a transparent conductive film; 4. a lamp bead encapsulation layer; 5. an LED wafer; 6. a light scattering colloid; 7. a first through hole; 8. a second through hole; 9. an electrode pad; 10. a common pad; 11. a COB substrate; 12. an LED driving IC chip; 13. packaging colloid; 14. pins; 15. a release film bottom plate; 16. a light emitting layer; 17. a P-type semiconductor; 18. an N-type semiconductor; 19. and a conductive connection layer.

Detailed Description

For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present application based on the embodiments herein.

The embodiment of the application provides an LED light-emitting device structure and a manufacturing method thereof, which can solve the problems that the surface of a lamp bead in the related art emits light and cannot be blacked, and the blackness and the contrast of a display screen can be greatly influenced in a near-distance viewing use scene.

Referring to fig. 1 and 2, a first aspect of an embodiment of the present application provides an LED light emitting device structure, including:

and the lower substrate comprises a glass substrate 1, wherein the top surface of the glass substrate 1 is covered with a black insulating layer 2, and the black insulating layer 2 can be adhered to the top surface of the glass substrate 1 by adopting a black insulating film or coated on the top surface of the glass substrate 1 by adopting a black insulating paint. The black insulating layer 2 can improve the blackness and contrast of a display screen formed by using the LED light emitting device of the present application, and can insulate a plurality of LED chips 5 from each other.

An upper substrate including a transparent conductive film 3 and a bead encapsulation layer 4 covering the top surface of the transparent conductive film 3; the transparent conductive film 3 can be used for connecting a plurality of LED chips 5 to form a common electrode, and the transparent conductive film 3 can also transmit light after the plurality of LED chips 5 are lighted to emit light. The lamp bead encapsulation layer 4 is used to cover the surface of the transparent conductive film 3 to protect the transparent conductive film 3 and the LED chip 5.

The LED chips 5 are provided in plurality, and the LED chips 5 are arranged in an array between the lower substrate and the upper substrate. One end of the LED chip 5 is attached to the upper surface of the black insulating layer 2, the other end is attached to the lower surface of the transparent conductive film 3, and the plurality of LED chips 5 are combined with each other to form a lamp bead unit capable of emitting different colors.

And a diffusion colloid 6 filled between the lower substrate and the upper substrate to fix the plurality of LED chips 5 between the lower substrate and the upper substrate. The light-diffusing colloid 6 is transparent colloid, and the light-diffusing colloid 6 can be used for fixedly sealing the plurality of LED chips 5 between the lower substrate and the upper substrate, and can also improve the uniformity of light emission of the plurality of LED chips 5.

The LED light-emitting device structure of the embodiment of the application is characterized in that the glass substrate 1 is arranged on the lower substrate, the black insulating layer 2 is covered on the top surface of the glass substrate 1, the black insulating layer 2 enables the front surface of the LED light-emitting device to be completely black, white spots can be seen at a short distance, blackness and contrast are improved, and the display effect of a use scene is seen at a short distance.

The LED wafers 5 are arranged between the lower substrate and the upper substrate in an array manner, the LED wafers 5 are fixed between the lower substrate and the upper substrate through the light scattering colloid 6, the LED light-emitting devices emit light on four sides after the LED wafers 5 are lightened, the light mixing effect is better, and the effect that the color difference on the four sides of the LED light-emitting devices is extremely low is achieved under the cooperation of the light scattering colloid 6.

In some alternative embodiments: referring to fig. 1, 2 and 18, an embodiment of the present application provides an LED light emitting device structure, in which a plurality of LED chips 5 include a red LED chip, a green LED chip and a blue LED chip. When the LED light emitting device structure is not divided, the red LED wafer, the green LED wafer and the blue LED wafer are all provided with a plurality of LED chips.

Each lamp bead unit at least comprises a red LED wafer, a green LED wafer and a blue LED wafer. The LED chip 5 of the present application includes a P-type semiconductor 17 and an N-type semiconductor 18 disposed opposite to each other, and a light-emitting layer 16 that emits light around between the P-type semiconductor 17 and the N-type semiconductor 18. A conductive connection layer 19 is provided on both the P-type semiconductor 17 and the N-type semiconductor 18 on the side remote from the light-emitting layer 16.

The light-emitting layer 16 of the embodiment of the present application is composed of a glass block or a heat conductive resin block, and has both good light transmittance and good heat dissipation. When the LED chip 5 is energized, the P-type semiconductor 17 and the N-type semiconductor 18 exchange holes and electrons, and an electroluminescence effect occurs on the opposite surfaces, and the generated light is directed onto the light emitting layer 16, and light is emitted to the periphery via the light emitting layer 16. The conductive connection layer 19 is used to connect the P-type semiconductor 17 and the N-type semiconductor 18, respectively, to supply power thereto.

In some alternative embodiments: referring to fig. 1 to 3 and 18, the embodiment of the application provides an LED light emitting device structure, wherein one end of an LED wafer 5 of the LED light emitting device structure is mutually attached to and connected with a transparent conductive film 3 through a conductive connection layer 19, the other end of the LED wafer 5 is mutually attached and connected with a black insulating layer 2 through the conductive connection layer 19, and the conductive connection layer 19 is made of black conductive metal, so as to further improve blackness and contrast.

A plurality of first through holes 7 which are respectively communicated with a plurality of LED wafers 5 are formed on the lower substrate, a second through hole 8 which is communicated with the transparent conductive film 3 is formed on the lower substrate and the light scattering colloid 6, and the second through hole 8 does not penetrate through the transparent conductive film 3. The glass substrate 1 is provided with electrode pads 9 extending into the first through holes 7 and connecting with a plurality of LED chips, and common pads 10 extending into the second through holes 8 and connecting with the transparent conductive film 3, wherein the number of the electrode pads 9 is the same as the number of the LED chips 5.

According to the embodiment of the application, the first through holes 7 communicated with the LED wafers 5 and the second through holes 8 communicated with the transparent conductive film 3 are formed in the lower substrate, the first through holes 7 and the second through holes 8 are processed by laser etching, and the electrode pads 9 and the common pads 10 penetrate through the glass substrate 1 to be vertically and electrically connected with the LED wafers 5 or the transparent conductive film 3.

In some alternative embodiments: referring to fig. 4, the embodiment of the application provides an LED light emitting device structure, which further includes a COB substrate 11, and an IC chip is attached to the COB substrate 11, so that a signal can be output to light a lamp bead on the upper portion of the COB substrate 11. The COB substrate 11 is located at the bottom of the glass substrate 1 and is electrically connected to the electrode pad 9 and the common pad 10 on the glass substrate 1 through pins to form a COB device.

According to the embodiment of the application, the COB substrate 11 is additionally arranged on the basis of the embodiment, the COB substrate 11 is integrated with an IC chip, the lamp beads on the COB substrate 11 are lightened and emit light rays with different colors under the control of the IC chip, the COB substrate 11 is an integrated circuit board, and a plurality of LED light emitting devices can be arranged on the COB substrate 11. In order to improve the structural stability of the COB substrate 11 and the LED light emitting device, an encapsulant may be filled between the COB substrate 11 and the glass substrate 1.

In the embodiment of the application, the COB substrate 11 is aligned with the corresponding pins of the glass substrate 1 of the LED light-emitting device, the pins are electrically connected, and the finished COB board can be simply and quickly manufactured. The lamp beads of the COB plate manufactured by the method are integrally formed, no mounting gap exists between every two pixel points, the light emitted by each pixel point is uniform, the color difference is extremely small, the screen contrast is extremely high, and the close-range viewing effect is extremely good.

In some alternative embodiments: referring to fig. 5, the embodiment of the present application provides an LED light emitting device structure further including an LED driving IC chip 12, the LED driving IC chip 12 being located at the bottom of the glass substrate 1 and electrically connected to the electrode pad 9 and the common pad 10 on the glass substrate 1 through pins. The LED driver IC chip 12 provides logic control for the beads, controlling the beads on the LED driver IC chip 12 to light up and emit light of different colors.

Pins 14 are arranged on one surface of the LED drive IC chip 12, which is away from the glass substrate 1, and packaging colloid 13 exposing the pins 14 is filled between the LED drive IC chip 12 and the glass substrate 1 to form LED lamp beads with the drive IC chip. The packaging colloid 13 is not only filled between the LED driving IC chip 12 and the glass substrate 1, but also covers the periphery of the LED driving IC chip 12 to protect the LED driving IC chip 12.

In some alternative embodiments: referring to fig. 1 to 3, an embodiment of the present application provides an LED light emitting device structure, where a plurality of LED chips 5 of the LED light emitting device structure are arranged between a lower substrate and an upper substrate in an equidistant array, so as to improve the uniformity of light emission of the LED light emitting device. The frosting is deviating from the one side of transparent conductive film 3 to lamp pearl encapsulation layer 4, and the frosting of lamp pearl encapsulation layer 4 can reduce reflection of light effect.

Referring to fig. 6 to 15, a second aspect of the embodiments of the present application provides a method for manufacturing an LED light emitting device structure, where the method uses the LED light emitting device structure described in any one of the foregoing, and the method includes:

step 1, a lamp bead packaging layer 4 is covered on a release film base plate 15, and a transparent conductive film 3 is covered on the lamp bead packaging layer 4, so that an upper substrate is manufactured.

And 2, arranging a plurality of LED chips 5 on the transparent conductive film 3 in an array manner through a mass transfer mode at the top of the transparent conductive film 3.

And 3, covering a black insulating layer 2 on the top of the glass substrate 1, waiting for the black insulating layer 2 to be solidified on the glass substrate 1, and further manufacturing a lower substrate.

And 4, mounting a lower substrate on the top of the upper substrate, and enabling the black insulating layer 2 of the lower substrate to face the upper substrate and be mutually attached with the plurality of LED chips 5.

And step 5, injecting an astigmatism colloid 6 between the upper substrate and the lower substrate to fix the plurality of LED chips 5 between the upper substrate and the lower substrate.

And 6, after the light scattering colloid 6 is solidified, forming a plurality of first through holes 7 communicated with the LED wafers 5 and second through holes 8 communicated with the transparent conductive film 3 on the lower substrate through laser.

And 7, preparing the LED luminescent device by depositing the electrode pad 9 extending into the first through hole 7 and the common pad 10 extending into the second through hole 8 on the glass substrate 1.

In some alternative embodiments: referring to fig. 16, an embodiment of the present application provides a method for manufacturing an LED light emitting device structure, where the method further includes:

step 8, mounting a COB substrate 11 at the bottom of the LED light-emitting device, and attaching an IC chip on the COB substrate 11;

the COB substrate 11 is electrically connected to the electrode pad 9 and the common pad 10 on the glass substrate 1 through pins, and the release film base plate 15 is removed to form the COB device.

In some alternative embodiments: referring to fig. 17, an embodiment of the present application provides a method for manufacturing an LED light emitting device structure, where the method further includes:

step 9, mounting an LED driving IC chip 12 at the bottom of the LED light emitting device, wherein the LED driving IC chip 12 is electrically connected with an electrode pad 9 and a common pad 10 on the glass substrate 1 through pins;

a packaging colloid 13 is filled between the LED driving IC chip 12 and the glass substrate 1, and the packaging colloid 13 surrounding the LED driving IC chip 12 is filled around the LED driving IC chip 12;

the packaging colloid 13 exposes one surface pin 14 of the LED driving IC chip 12, which is far away from the glass substrate 1, and after the packaging colloid 13 is solidified, the release film bottom plate 15 is removed to form the LED lamp bead with the driving IC chip.

Principle of operation

The embodiment of the application provides an LED light-emitting device structure and a manufacturing method thereof, and because the LED light-emitting device structure is provided with a lower substrate, the lower substrate comprises a glass substrate 1, and the top surface of the glass substrate 1 is covered with a black insulating layer 2; an upper substrate including a transparent conductive film 3 and a bead encapsulation layer 4 covering the top surface of the transparent conductive film 3; the LED chips 5 are arranged in a plurality, and the LED chips 5 are arranged between the lower substrate and the upper substrate in an array manner; and a diffusion colloid 6 filled between the lower substrate and the upper substrate to fix the plurality of LED chips 5 between the lower substrate and the upper substrate.

Therefore, the LED light-emitting device structure is characterized in that the glass substrate 1 is arranged on the lower substrate, the black insulating layer 2 is covered on the top surface of the glass substrate 1, the black insulating layer 2 enables the front surface of the LED light-emitting device to be completely black, white spots can be seen at a short distance, blackness and contrast are improved, and the display effect of a use scene is seen at a short distance. The LED wafers 5 are arranged between the lower substrate and the upper substrate in an array manner, the LED wafers 5 are fixed between the lower substrate and the upper substrate through the light scattering colloid 6, the LED light-emitting devices emit light on four sides after the LED wafers 5 are lightened, the light mixing effect is better, and the effect that the color difference on the four sides of the LED light-emitting devices is extremely low is achieved under the cooperation of the light scattering colloid 6.

In the description of the present application, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of description of the present application and simplification of the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present application. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

It should be noted that in this application, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

The foregoing is merely a specific embodiment of the application to enable one skilled in the art to understand or practice the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An LED light emitting device structure, comprising:

the lower substrate comprises a glass substrate (1), and the top surface of the glass substrate (1) is covered with a black insulating layer (2);

the LED lamp comprises an upper substrate, a lower substrate and a light source, wherein the upper substrate comprises a transparent conductive film (3) and a lamp bead packaging layer (4) covering the top surface of the transparent conductive film (3);

the LED chips (5) are arranged in a plurality, and the LED chips (5) are arranged between the lower substrate and the upper substrate in an array manner;

and the light scattering colloid (6), wherein the light scattering colloid (6) is filled between the lower substrate and the upper substrate.

2. An LED light device structure as set forth in claim 1, wherein:

the plurality of LED chips (5) comprise a red LED chip, a green LED chip and a blue LED chip;

the LED wafer (5) comprises a P-type semiconductor (17) and an N-type semiconductor (18) which are oppositely arranged, and a light-emitting layer (16) which is positioned between the P-type semiconductor (17) and the N-type semiconductor (18) and emits light to the periphery;

and the surfaces of the P-type semiconductor (17) and the N-type semiconductor (18) far away from the light-emitting layer (16) are respectively provided with a conductive connecting layer (19).

3. An LED light device structure as set forth in claim 2, wherein:

one end of the LED wafer (5) is mutually attached and connected with the transparent conductive film (3) through the conductive connecting layer (19), the other end of the LED wafer (5) is mutually attached and connected with the black insulating layer (2) through the conductive connecting layer (19), and the conductive connecting layer (19) is black conductive metal.

4. An LED light device structure as claimed in any one of claims 1 to 3, wherein:

the lower substrate is provided with a plurality of first through holes (7) which are respectively communicated with a plurality of LED wafers (5), and the lower substrate and the prime astigmatism colloid (6) are provided with second through holes (8) which are communicated with the transparent conductive film (3);

the glass substrate (1) is provided with an electrode pad (9) which extends into the first through hole (7) and is connected with the LED chip (5), and a public pad (10) which extends into the second through hole (8) and is connected with the transparent conductive film (3).

5. An LED light device structure as set forth in claim 4, wherein:

the COB device is characterized by further comprising a COB substrate (11), wherein the COB substrate (11) is positioned at the bottom of the glass substrate (1) and is electrically connected with an electrode pad (9) and a common pad (10) on the glass substrate (1) through pins to form the COB device.

6. An LED light device structure as set forth in claim 4, wherein:

the LED driving IC chip (12) is positioned at the bottom of the glass substrate (1) and is electrically connected with the electrode pad (9) and the common pad (10) on the glass substrate (1) through pins;

the LED lamp comprises a glass substrate (1), an LED driving IC chip (12) and a packaging colloid (13), wherein the LED driving IC chip (12) is provided with pins (14) on one surface which is far away from the glass substrate (1), and the packaging colloid (13) which exposes the pins (14) is filled between the LED driving IC chip (12) and the glass substrate (1) to form an LED lamp bead with the driving IC chip.

7. An LED light device structure as set forth in claim 1, wherein:

the LED chips (5) are arranged between the lower substrate and the upper substrate in an equidistant array manner, and one surface, deviating from the transparent conductive film (3), of the lamp bead packaging layer (4) is a frosted surface.

8. A method of manufacturing an LED light emitting device structure, characterized in that the method uses the LED light emitting device structure of any one of claims 1 to 7, the method comprising:

covering a lamp bead packaging layer (4) on a release film base plate (15), and covering a transparent conductive film (3) on the lamp bead packaging layer (4) to prepare an upper substrate;

arranging a plurality of LED chips (5) on the transparent conductive film (3) in an array manner;

covering a black insulating layer (2) on the top of a glass substrate (1), and preparing a lower substrate after the black insulating layer (2) is solidified on the glass substrate (1);

the lower substrate is arranged on the top of the upper substrate, and the black insulating layer (2) of the lower substrate faces the upper substrate and is mutually attached to the plurality of LED chips (5);

injecting an astigmatic gel (6) between the upper substrate and the lower substrate;

after the astigmatic gel (6) is solidified, a plurality of first through holes (7) communicated with a plurality of LED wafers (5) and second through holes (8) communicated with the transparent conductive film (3) are formed on the lower substrate;

and (3) depositing an electrode pad (9) extending into the first through hole (7) and a common pad (10) extending into the second through hole (8) on the glass substrate (1) by metal to prepare the LED luminescent device.

9. The method of fabricating an LED light device structure as recited in claim 8, further comprising:

mounting an LED light-emitting device on a COB substrate (11);

and removing the release film bottom plate (15) to form the COB device.

10. The method of fabricating an LED light device structure as recited in claim 8, further comprising:

an LED driving IC chip (12) is arranged at the bottom of the LED light emitting device;

packaging colloid (13) is filled between the LED driving IC chip (12) and the glass substrate (1), and packaging colloid (13) surrounding the LED driving IC chip (12) is filled around the LED driving IC chip (12);

and after the packaging colloid (13) is solidified, removing the release film base plate (15) to form the LED lamp bead with the driving IC chip.