CN117559943A - Quartz resonator with sandwich structure formed by double substrates and piezoelectric layers and electronic device - Google Patents

Abstract

The invention relates to a quartz resonator comprising: the device comprises a bottom electrode, a top electrode and a quartz piezoelectric layer, wherein the quartz piezoelectric layer is of a counter-high platform structure comprising a boss; the packaging structure comprises a first packaging substrate, a second packaging substrate and a joint sealing layer, wherein: the bonding sealing layer comprises a piezoelectric layer packaging part which is a part of a quartz piezoelectric layer, and the piezoelectric layer packaging part comprises the boss; the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate. The invention also relates to an electronic device.

Description

Quartz resonator with sandwich structure formed by double substrates and piezoelectric layers and electronic device

Technical Field

Embodiments of the present invention relate to the field of semiconductors, and in particular, to a quartz resonator with a sandwich structure formed by a double substrate and a piezoelectric layer, and an electronic device.

Background

High fundamental frequency, miniaturization and low-level dwarfing are trends of quartz crystal wafers (hereinafter simply referred to as wafers) developing. In the traditional wafer manufacturing scheme, a mode of grinding and slicing is adopted to obtain a particulate sheet with a certain frequency, and then subsequent electrode plating and frequency modulation are carried out. However, the wire cutting technique used for dicing is difficult to achieve for 1mm×1mm and below, and basically cannot cover wafer production for 1.2mm×1.0mm and below, and cannot satisfy 1.0mm×0.8mm and below. The fundamental frequency of the wafer is mainly determined by the thickness of the wafer resonance region, and is governed by the following formula:

f ₀ (MHz)＝1670(MHz·μm)/d(μm) (1)

The wafer-level manufacturing can greatly reduce the manufacturing cost of a single resonator and control consistency among resonators; in general, the larger the wafer size, the lower the manufacturing cost of a single resonator.

However, for wafer level manufacturing schemes, several hundred to thousands of dies are arranged on a single wafer, and precise control of the quartz thickness at each location is a significant challenge, which directly results in difficulty in ensuring accuracy and uniformity of die frequency across the wafer. Wafer level die frequency modulation is therefore a significant challenge. The method adopted by the prior art is mainly focused on adopting a grinding technology with an ultra-high precision film thickness monitoring system to prepare a quartz film with the thickness within a few nanometers at one time. The frequency control and adjustment technology has extremely high requirements on materials and manufacturing processes, and the larger the area of a wafer is, the higher the manufacturing difficulty is, so that the generation of a low-cost and high-efficiency manufacturing scheme is hindered.

In addition, it is desirable to optimize the boundary conditions of the resonators, reduce the lateral leakage of acoustic waves, and thereby further improve the performance of the resonators, based on the wafer level fabrication of individual resonators. However, it is difficult to optimize the boundary conditions of the resonator by the existing mechanical grinding and thinning method.

In the prior art, the resonator adopts an cantilever beam type structure, the mechanical stability of the resonator is reduced, and in the prior art, a resonance area is manufactured by adopting a mechanical grinding mode, so that the scale of wafer-level manufacturing is limited (the manufacturing of wafers with more than two inches is difficult to realize).

Disclosure of Invention

The present invention has been made to alleviate or solve at least one of the above-mentioned problems of the prior art.

According to an aspect of an embodiment of the present invention, there is provided a quartz resonator including:

the device comprises a bottom electrode, a top electrode and a quartz piezoelectric layer, wherein the quartz piezoelectric layer is of a counter-high platform structure comprising a boss;

the package structure comprises a first package substrate, a second package substrate and a bonding sealing layer,

wherein:

the bonding sealing layer comprises a piezoelectric layer packaging part which is a part of a quartz piezoelectric layer, and the piezoelectric layer packaging part comprises the boss;

the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate.

The embodiment of the invention also relates to a manufacturing method of the quartz resonator, which comprises the following steps:

Providing a quartz wafer;

forming a quartz piezoelectric layer from a quartz wafer, comprising the steps of: forming quartz piezoelectric layers corresponding to a plurality of quartz resonators on a quartz wafer at least by utilizing micro/nano electromechanical system lithography technology, wherein the quartz piezoelectric layers are of anti-high structures comprising bosses, and a first electrode layer comprising a first electrode and a second electrode layer comprising a second electrode are arranged on two sides of the quartz piezoelectric layers;

providing a first packaging substrate and a second packaging substrate, wherein the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate, the first packaging substrate is opposite to the first electrode layer, and the second packaging substrate is opposite to the second electrode layer; and

segmentation: after forming the sandwich structure, at least the sandwich structure is cut or split to form a plurality of mechanically separated sandwich structure pellets.

The embodiment of the invention also relates to an electronic device, which comprises the quartz resonator.

Drawings

These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout the several views, and wherein:

FIGS. 1-14 are schematic cross-sectional views of a process for fabricating a quartz resonator according to an exemplary embodiment of the invention;

fig. 15 is a schematic cross-sectional view of a package structure of a quartz resonator according to a further exemplary embodiment of the invention;

FIGS. 16-35 are schematic cross-sectional views of a process for fabricating a quartz resonator according to yet another exemplary embodiment of the invention;

FIGS. 36-38 are schematic cross-sectional views of package structures of quartz resonators according to further exemplary embodiments of the invention;

fig. 39-49 are schematic cross-sectional views of a fabrication process of a quartz resonator structure according to an exemplary embodiment of the invention;

FIG. 50 is a flow chart of fundamental frequency adjustment of a resonant region of a quartz wafer;

fig. 51 is a flow chart of the resonant frequency adjustment of a quartz resonator.

Detailed Description

The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention. Some, but not all embodiments of the invention. All other embodiments, which are derived by a person skilled in the art based on the embodiments of the invention, fall within the scope of protection of the invention.

The invention provides a quartz wafer manufacturing process based on micro/nano electromechanical system (M/NEMS) lithography technology, which can be used for manufacturing a quartz resonator with small size and accurate frequency.

In the invention, a wafer-level frequency/thickness monitoring and regulating method is adopted, so that the requirement on uniformity of thickness processing of the quartz wafer is reduced, and the processing difficulty is reduced. The scheme is widely applicable to the manufacture of quartz chips with different frequency bands, is not limited by the area of the quartz wafer, and has obvious advantages.

In the present invention, a sandwich structure is employed, which is advantageous in achieving miniaturization and flattening of the resonator.

In the invention, the quartz piezoelectric layer with the anti-high structure is manufactured on the quartz wafer based on micro/nano electromechanical system (M/NEMS) photoetching technology, thereby being beneficial to optimizing the boundary condition of the quartz resonator, reducing the transverse leakage of sound waves and improving the performance of the quartz resonator.

The micro-nano electromechanical system (M/NEMS) -based wafer manufacturing scheme fully utilizes the advantages of MEMS photoetching technology and wafer-level process manufacturing modes, and utilizes a wet method for etching wafer contours, thereby getting rid of the limitation of a cutting technology on the wafer size and realizing the processing of wafers with smaller sizes of 1210, 1008 and below. In addition, the wafer processing scheme for manufacturing the wafer can improve the dimension processing precision and the wafer processing efficiency.

The invention provides a wafer level chip manufacturing and frequency control process, which gets rid of the requirement of quartz chips on ultra-high precision grinding technology, and greatly reduces the difficulty of frequency modulation, so that the frequency modulation is not limited by the expansion of the wafer area. Meanwhile, the scheme meets the miniaturization manufacturing of the wafers from low frequency to high frequency (30-300 MHz) and ultrahigh frequency (300 MHz-3 GHz), and has important significance for promoting the development of the field of quartz wafers.

The process of manufacturing a quartz resonator according to the invention is illustrated below with reference to fig. 1-51. In the present invention, reference numerals are schematically illustrated as follows:

10: quartz wafer or wafer.

12: a resonance region.

14: and etching the region or the through hole.

14': and etching the region of the through hole.

16: and a piezoelectric layer encapsulation part.

18: and (5) reversing the height of the platform.

20. 20A, 20B, 20C: a mask layer or mask.

22: mask slots or mask openings.

30: the top electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite or alloy of the above metals.

32: the material of the electric connection part of the top electrode is selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite or alloy of the above metals. In alternative embodiments, the top electrode and its electrical connections, the bottom electrode and its electrical connections may be the same metallic material.

40: the bottom electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite or alloy of the above metals.

50: a first package substrate or a first package quartz wafer.

52: a first cavity.

54: the first conductive via or the first package substrate conductive via.

60: a second package substrate or a second package quartz wafer.

62: a second cavity.

64: the second conductive via or the second package substrate conductive via.

72A, 72B: the metal bonding layer can be gold, gold tin, copper tin bonding and other modes.

74A, 74B: the filler metal layer, the outer connection, the top electrode and its electrical connection, and the bottom electrode and its electrical connection may be the same metal material in alternative embodiments.

In particular embodiments of the invention, the various parts are described with respect to one of the materials possible therein, but are not limited thereto.

Fig. 1 to 14 are schematic cross-sectional views of a process of fabricating a quartz resonator according to an exemplary embodiment of the present invention. The resonant structure of the quartz resonator in the embodiment adopts a structure with a single-sided anti-high platform, has better structural stability compared with a structure with a flat piezoelectric layer, improves the shock resistance of a wafer, and is also beneficial to improving the boundary condition of the resonator so as to improve the performance of the resonator.

The process of manufacturing a quartz resonator is exemplarily described below with reference to fig. 1-14, which includes the steps of:

step 1: mask 20A is made. As shown in fig. 1, mask 20 is fabricated on one side (e.g., front side) of a quartz wafer (e.g., 1-8 inches in diameter and 100 μm to 1mm thick) using micro/nano-electromechanical lithography, mask 20A on the front side is patterned to form mask openings 22, and specifically, the areas of via etched region 14 and resonance region 12 for fabrication are exposed. A mask 20A is also provided on the other side (e.g., minor side) of the quartz wafer 10, covering the entire other side.

Here, for subsequent use of wet etching (e.g., step 2 of the embodiment shown in fig. 1-14), the mask may be a metal mask, such as chrome gold (upper layer of gold, lower layer of chrome), or other inert metal; for subsequent use of dry etching (e.g., step 2 of the embodiment shown in fig. 1-14), the mask may be SU-8 photoresist, or other photoresist suitable for dry etching. The material of the mask 20A may also be suitable for other embodiments, and will not be described in detail.

It should be noted that in fig. 1-14, only the area corresponding to a single quartz resonator on the wafer is shown, as can be appreciated, there are multiple areas shown in fig. 1-14 on the quartz wafer 10. In other embodiments, similar understanding should be made, and will not be repeated.

Step 2: and (5) wet etching. As shown in fig. 2, the quartz wafer 10 is etched using a mask 20A as a barrier layer by an etching solution (e.g., an HF etching solution having a temperature higher than 20 ℃ and a concentration higher than 5% and an HF/NH4F mixed etching solution). For example, under the action of high-temperature high-concentration etching liquid, higher etching rate and steeper crystal face gradient can be obtained. In fig. 2, the resonance region of the quartz wafer is etched in part to form an anti-plateau 18 at the periphery of the resonance region to form an anti-plateau structure. Fig. 2 shows a single-sided counter-elevation structure.

Although not shown, step 2 may be replaced by dry etching, or a combination of wet etching and dry etching.

Step 3: mask 20A is removed. As shown in fig. 3, after the etching of the quartz wafer 10, the mask 20A may be removed by cleaning, baking, and then wet etching.

Step 4: and manufacturing a top electrode. As shown in fig. 4, a resonator top electrode 30 is formed on the quartz wafer 10 by metal sputtering or vapor deposition. The top electrode 30 is composed of at least one layer of metal, wherein the metal in direct contact with the surface of the quartz wafer 10 may be chromium, titanium tungsten, molybdenum, gold, silver, etc. The top electrode 30 covers the via etched region 14.

Step 5: the first package substrate is bonded. As shown in fig. 5, the quartz wafer 10 is aligned with the quartz wafer or the first package substrate 50 having the first cavity 52 etched in advance such that the top electrode 30 is located just inside the first cavity 52. The first package substrate 50 and the quartz wafer 10 may be bonded together by metal diffusion bonding, and may be gold, gold tin, copper tin bonding, or the like. Other means of engagement may be used, and are not limited in this regard. Other packaging materials may be used for the first package substrate 50.

In the case where the first package substrate 50 is a quartz substrate in an embodiment of the present invention, it may be a quartz wafer having a thickness of 20-300 μm, which is completely in conformity with the wafer dimension specification of the quartz wafer 10.

In the embodiment shown in fig. 5, in the case of metal bonding between the first package substrate 50 and the quartz wafer 10, a metal bonding layer 72A is further disposed at the junction of the first package substrate 50 and the quartz wafer 10.

Step 6: and thinning the quartz wafer. As shown in fig. 6, the quartz wafer 10 is thinned by grinding and polishing processes to a thickness of the remaining resonance region (i.e., the film thickness d ₀ ) The value of the residual is, for example, within 1 μm.

Step 7: and measuring the film thickness at the wafer level. And (5) measuring the thickness of the quartz wafer in the ground resonance area by using an optical method. The measuring point must be selected to have a top electrode on the other side of the quartz filmIs a region of (a) in the above-mentioned region(s). As shown in FIG. 7, the thickness of the quartz film in the resonance region of each wafer was measured by optically measuring the thickness of the transparent film, and the sum of the measured thickness and the design value d was obtained ₀ The difference value provides basis for the film thickness adjustment of the next wafer by wafer.

Step 8: the thickness of the quartz film is adjusted. As shown in fig. 8, the quartz plate of the resonance region of the wafer is subjected to secondary etching by means of ion beam etching or wet etching. The operations of fig. 7 and 8 are repeated, and the wafer is subjected to multiple thickness adjustments, so as to finally obtain a precise thickness. This flow can be seen in fig. 50.

Step 9: a through-hole-piercing mask 20B is provided on the upper surface of the structure shown in fig. 8, and as shown in fig. 9, the mask 20B is provided with a mask opening at a position corresponding to the through-hole etched region 14.

Step 10: for example, a portion of the quartz wafer 10 at the via etching region 14 is etched by dry etching to form a via 14 through the via etching region 14, as shown in fig. 10.

Step 11: mask 20B is removed. After step 10, mask 20B may be removed by wet etching to obtain the structure shown in fig. 11.

Step 12: and manufacturing a bottom electrode and an electric connection part. As shown in fig. 12, the resonator bottom electrode 40 and the electrical connection portion 32 are formed on the quartz wafer 10 by metal sputtering or vapor deposition. The bottom electrode 40 is composed of at least one layer of metal, wherein the metal in direct contact with the surface of the quartz wafer 10 should be chromium, titanium tungsten, molybdenum, gold, silver, etc. The electrical connection 32 is electrically connected to the metal within the via etched region 14, which is disposed on the same side of the quartz wafer 10 as the bottom electrode 40 and is spaced apart from each other.

Step 13: frequency measurement and modulation. As shown in FIG. 13, the measured resonant frequency f of the quartz resonator is smaller than the predetermined resonant frequency f ₀ In the case of a quartz resonator, the mass of the top electrode 30 can be changed, for example, by means of a particle beam, in order to raise the resonance frequency of the quartz resonator. As can be appreciated, the frequency tuning step may not be performed in the event that the measured resonant frequency corresponds to the set frequency. The flow can be seen in FIG. 41。

Step 14: and bonding the second package substrate. As shown in fig. 14, the quartz wafer 10 in step 13 is aligned with the quartz wafer or the second package substrate 60 having the second cavity 62 etched in advance so that the bottom electrode 40 is located just inside the second cavity 62. The second package substrate 60 and the quartz wafer 10 may be bonded together by metal diffusion bonding, and may be gold, gold tin, copper tin bonding, or the like. Other means of engagement may be used, and are not limited in this regard. As shown in fig. 14, the second package substrate 60 is provided with a second conductive via 64, which is electrically connected with the electrical connection portion 32 of the top electrode 30.

In the case where the second package substrate 60 is a quartz substrate in an embodiment of the present invention, it may be a quartz wafer having a thickness of 20-300 μm, which is completely in conformity with the wafer dimension specification of the quartz wafer 10.

In the embodiment shown in fig. 14, in the case of metal bonding between the second package substrate 60 and the quartz wafer 10, a metal bonding layer 72B is further provided at the junction of the second package substrate 60 and the quartz wafer 10.

Fig. 15 is a schematic cross-sectional view of a package structure of a quartz resonator according to a further exemplary embodiment of the invention. The structure shown in fig. 15 is different from the structure shown in fig. 14 only in the location of the second conductive via 64, and the other structures will not be described again. In fig. 14, the second conductive via 64 is aligned with the via etched region 14, while in fig. 15, the second conductive via 64 is offset from the via etched region 14. The staggered package is beneficial to improving the stability of the structure and reducing the air tightness damage caused by through hole damage due to the problems of stress, mechanical deformation and the like. Meanwhile, the dislocation of the through holes can shield noise caused by interference such as stress, heat and electromagnetic signals transmitted through the through holes to a certain extent.

After step 14, a singulation operation may be performed to form the final package formed quartz resonator into individual devices.

In one embodiment of the invention, the size of the finally formed quartz piezoelectric layer is less than 1mm by 1mm, and/or the thickness of the resonance region of the quartz piezoelectric layer is less than 40 μm or the fundamental frequency of the quartz resonator is above 40 MHz. This also applies to other embodiments of the invention.

In the present invention, the package substrate may be a quartz substrate, or may be a substrate of other materials, such as silicon, glass, sapphire, or the like. In the following embodiments, a description thereof will be omitted. In the present invention, in the case where the package substrate is a quartz substrate, it may be a quartz wafer having a thickness of 20 to 300 μm, which is completely in conformity with the wafer size specification of the quartz wafer 10.

In the present invention, in the case of an all-quartz package, the package cover is a transparent material. Therefore, frequency modulation can also occur after packaging is completed, and the frequency is directly adjusted by using laser through the transparent quartz packaging cover to adjust frequency variation caused by packaging stress. In the following embodiments, a description thereof will be omitted.

Fig. 16-35 are schematic cross-sectional views of a process of fabricating a quartz resonator according to yet another exemplary embodiment of the present invention. The resonant structure of the quartz resonator in the embodiment adopts a structure with double-sided counter elevation, and compared with the embodiment shown in fig. 1-14, the structure has better structural stability, improves the shock resistance of the wafer, can further improve the boundary condition of the wafer resonant area, reduces the transverse leakage of sound waves, and further improves the performance of the resonator; in addition, the double-sided anti-high table structure provides a space for the vibration area, so that the grooving on the packaging cover can be avoided, and the thinning of the wafer is facilitated.

The process of fabricating the quartz resonator is exemplarily described below with reference to fig. 16 to 35, which includes the steps of:

step 1: mask 20A is made. As shown in fig. 16, mask 20A is fabricated on one side (e.g., front side) of a quartz wafer (e.g., 1-8 inches in diameter and 100 μm to 1mm thick) using micro/nano-electromechanical system lithography, mask 20A on the front side is patterned to form mask openings 22, and the area of resonance region 12 is covered. A mask 20A is also provided on the other side (e.g., minor side) of the quartz wafer 10, covering the entire other side.

Step 2: and (5) wet etching. As shown in fig. 17, the quartz wafer 10 is etched using a mask 20A as a barrier layer by an etching solution (e.g., an HF etching solution having a temperature higher than 20 ℃ and a concentration higher than 5% and an HF/NH4F mixed etching solution). For example, under the action of high-temperature high-concentration etching liquid, higher etching rate and steeper crystal face gradient can be obtained.

Although not shown, step 2 may be replaced by dry etching, or a combination of wet etching and dry etching.

Step 3: mask 20A is further patterned to expose the resonance region as shown in fig. 18.

Step 4: and (5) wet etching. As shown in fig. 19, the quartz wafer 10 is etched using a mask 20A as a barrier layer by an etching solution (e.g., an HF etching solution having a temperature higher than 20 ℃ and a concentration higher than 5% and an HF/NH4F mixed etching solution). In fig. 19, the resonance region of the quartz wafer is etched partially while the via etching region 14 is further etched, so that in fig. 19, the depth of the via etching region 14 is greater than the etching depth of the resonance region.

Although not shown, step 4 may be replaced by dry etching, or a combination of wet etching and dry etching.

Step 5: mask 20A is removed. As shown in fig. 20, after the etching of the quartz wafer 10, the mask 20A may be removed by cleaning, drying, and then wet etching.

Step 6: and manufacturing a top electrode. As shown in fig. 21, a resonator top electrode 30 is formed on the quartz wafer 10 by metal sputtering or vapor deposition. The top electrode 30 is composed of at least one layer of metal, wherein the metal in direct contact with the surface of the quartz wafer 10 may be chromium, titanium tungsten, molybdenum, gold, silver, etc. The top electrode 30 covers the via etched region 14.

Step 7: the first package substrate is bonded. As shown in fig. 22, the quartz wafer 10 is aligned with the quartz wafer or the first package substrate 50 having the first cavity 52 etched in advance such that the top electrode 30 is located just inside the first cavity 52. The first package substrate 50 and the quartz wafer 10 may be bonded together by metal diffusion bonding, and may be gold, gold tin, copper tin bonding, or the like. Other means of engagement may be used, and are not limited in this regard. Other packaging materials may be used for the package substrate 50.

In the case where the first package substrate 50 is a quartz substrate in an embodiment of the present invention, it may be a quartz wafer having a thickness of 20-300 μm, which is completely in conformity with the wafer dimension specification of the quartz wafer 10.

In the embodiment shown in fig. 22, in the case of metal bonding between the first package substrate 50 and the quartz wafer 10, a metal bonding layer 72A is further provided at the junction of the first package substrate 50 and the quartz wafer 10.

Step 8: and thinning the quartz wafer. As shown in fig. 23, the quartz wafer 10 is thinned using a grinding and polishing process.

Step 9: mask 20B is fabricated. As shown in fig. 24, a mask 20B is fabricated using micro/nano-electromechanical system lithography on the structure shown in fig. 23, which is patterned to form mask openings 22 and expose the resonance region. The material of mask 20B may be consistent with that of mask 20A.

Step 10: and (5) wet etching. As shown in fig. 25, the quartz wafer 10 is etched using an etching solution (e.g., an HF etching solution having a temperature higher than 20 ℃ and a concentration higher than 5% and an HF/NH4F mixed etching solution) with the mask 20B shown in fig. 24 as a barrier layer. For example, under the action of high-temperature high-concentration etching liquid, higher etching rate and steeper crystal face gradient can be obtained. Finally, a double sided counter mesa structure is formed, and a via etch region 14' is also formed on the other side of the quartz wafer 10 opposite to the via etch region 14 on one side, as shown in fig. 25. In the structure shown in fig. 25, the etching depth of the via etched region 14 'is identical to that of the resonance region on the other side of the quartz wafer 10, but a part of the quartz piezoelectric layer remains between the via etched region 14' and the via etched region 14.

Although not shown, step 10 may be replaced by dry etching, or a combination of wet etching and dry etching.

Step 11: mask 20B is removed. As shown in fig. 26, the structure shown in fig. 25 may be cleaned, dried, and then wet etched to remove the mask 20B.

Step 12: and measuring the film thickness at the wafer level. By optical meansAnd measuring the thickness of the quartz in the ground resonance area. The measurement point must be selected in the area of the quartz film where the top electrode is located on the other side. As shown in FIG. 27, the thickness of the quartz film in the resonance region of each wafer was measured by optically measuring the thickness of the transparent film, and the sum of the measured thickness and the design value d was obtained ₀ The difference value provides basis for the film thickness adjustment of the next wafer by wafer.

Step 13: the thickness of the quartz film is adjusted. As shown in fig. 28, the quartz plate of the resonance region of the wafer is subjected to secondary etching by means of ion beam etching or wet etching. The operations of fig. 27 and 28 are repeated, and the wafer is subjected to multiple thickness adjustments, resulting in a precise thickness. This flow can be seen in fig. 50.

Step 14: and manufacturing a bottom electrode. As shown in fig. 29, a resonator bottom electrode 40 is formed on the quartz wafer 10 by metal sputtering or vapor deposition. The bottom electrode 40 is composed of at least one layer of metal, wherein the metal in direct contact with the surface of the quartz wafer 10 should be chromium, titanium tungsten, molybdenum, gold, silver, etc.

Step 15: mask 20C is made. As shown in fig. 30, a mask 20C is fabricated on the structure shown in fig. 29 using micro/nano-electromechanical system lithography, which is patterned to form a mask opening 22 that exposes the via etched region 14' etched in step 10, the mask 20C covering the bottom electrode 40. The material of mask 20E may be consistent with that of mask 20.

Step 16: for example, the portion of the quartz wafer 10 at the via etched region 14 'is etched by dry etching to penetrate the via etched region 14', as shown in fig. 31.

Step 17: mask 20C is removed. As shown in fig. 32, the structure shown in fig. 31 may be cleaned, dried, and then wet etched to remove the mask 20C.

Step 18: the electrical connection 32 is made. As shown in fig. 33, the electrical connection portion 32 is formed on the quartz wafer 10 by metal sputtering or vapor deposition. The electrical connection 32 is electrically connected to the metal within the via etched region 14, which is disposed on the same side of the quartz wafer 10 as the bottom electrode 40 and is spaced apart from each other.

Step 19: frequency measurement and modulation. As shown in fig. 34, the resonance frequency f of the quartz resonator is measured, and when the measured resonance frequency is smaller than the predetermined resonance frequency f ₀ In the case of a quartz resonator, the mass of the top electrode 30 can be changed, for example, by means of a particle beam, in order to raise the resonance frequency of the quartz resonator. As can be appreciated, the frequency tuning step may not be performed in the event that the measured resonant frequency corresponds to the set frequency. This flow can be seen in fig. 51.

Step 20: and bonding the second package substrate. As shown in fig. 35, the quartz wafer 10 in step 19 is aligned with the quartz wafer or second package substrate 60 having the second cavity 62 etched in advance such that the bottom electrode 40 is located just inside the second cavity 62. The second package substrate 60 and the quartz wafer 10 may be bonded together by metal diffusion bonding, and may be gold, gold tin, copper tin bonding, or the like. Other means of engagement may be used, and are not limited in this regard. As shown in fig. 35, the second package substrate 60 is provided with a second conductive via 64, which is electrically connected to the electrical connection portion 32 of the top electrode 30.

In the case where the second package substrate 60 is a quartz substrate in an embodiment of the present invention, it may be a quartz wafer having a thickness of 20-300 μm, which is completely in conformity with the wafer dimension specification of the quartz wafer 10.

In the embodiment shown in fig. 35, in the case of metal bonding between the second package substrate 60 and the quartz wafer 10, a metal bonding layer 72B is further provided at the junction of the second package substrate 60 and the quartz wafer 10.

After step 20, a singulation operation may be performed to form the final package formed quartz resonator into individual devices.

Fig. 36-38 are schematic cross-sectional views of package structures of quartz resonators according to further exemplary embodiments of the invention. The structure shown in fig. 36-38 differs from the structure shown in fig. 35 only in the location or structure of the second conductive via 64, and the other structures will not be described again.

In fig. 36-38, the second conductive via 64 is offset from the via 14. The staggered package is beneficial to improving the stability of the structure and reducing the air tightness damage caused by through hole damage due to the problems of stress, mechanical deformation and the like. Meanwhile, the dislocation of the through holes can shield noise caused by interference such as stress, heat and electromagnetic signals transmitted through the through holes to a certain extent. The structure shown in fig. 37 improves the air tightness of the through hole by changing the cross-sectional shape of the through hole to be vertical, as compared with the structure shown in fig. 36, by improving the through hole manufacturing process. In the structure shown in fig. 38, the package substrate is changed to be a flat plate, which is helpful to reduce the total thickness of the wafer and improve the mechanical stability of the resonance region.

Fig. 39-49 are schematic cross-sectional views of a fabrication process of a quartz resonator structure according to yet another exemplary embodiment of the invention.

Step 1: mask 20 is made. As shown in fig. 39, mask 20 is fabricated on one side (e.g., front side) of a quartz wafer (e.g., 1-8 inches in diameter and 100 μm to 1mm thick) using micro/nano-electromechanical system lithography, mask 20 on the front side is patterned to form a rim mask, and the area of resonance region 12 is exposed. A mask 20 is also provided on the other side (e.g., minor side) of the quartz wafer 10, the mask 20 being patterned to form a rim mask, the region of the resonant region 12 being exposed.

Step 2: and (5) wet etching. As shown in fig. 40, the quartz wafer 10 is etched using the mask 20 as a barrier layer by an etching solution (e.g., an HF etching solution having a temperature higher than 20 ℃ and a concentration higher than 5% and an HF/NH4F mixed etching solution). For example, under the action of high-temperature high-concentration etching liquid, higher etching rate and steeper crystal face gradient can be obtained.

Although not shown, step 2 may be replaced by dry etching, or a combination of wet etching and dry etching.

As shown in fig. 40, portions of both sides of the quartz wafer 10 corresponding to the resonance regions are etched.

Step 3: mask 20 is removed. As shown in fig. 41, after the etching of the quartz wafer 10, the mask 20 may be removed by cleaning, drying, and then wet etching.

Step 4: and manufacturing a top electrode. As shown in fig. 42, the resonator top electrode 30 is formed on the quartz wafer 10 by metal sputtering or vapor deposition. The top electrode 30 is composed of at least one layer of metal, wherein the metal in direct contact with the surface of the quartz wafer 10 may be chromium, titanium tungsten, molybdenum, gold, silver, etc.

Step 5: and measuring the film thickness at the wafer level. The thickness of the quartz in the resonance region is measured optically. The measurement point must be selected in the area of the quartz film where the top electrode is located on the other side. As shown in FIG. 43, the thickness of the quartz film in the resonance region of each wafer was measured by optically measuring the thickness of the transparent film, and the sum of the measured thickness and the design value d was obtained ₀ The difference value provides basis for the film thickness adjustment of the next wafer by wafer.

Step 6: the thickness of the quartz film is adjusted. As shown in fig. 44, the quartz plate of the resonance region of the wafer is subjected to secondary etching by means of ion beam etching or wet etching. The operations of fig. 43 and 44 are repeated, and the wafer is subjected to multiple thickness adjustments, resulting in a precise thickness. This flow can be seen in fig. 50.

Step 7: and manufacturing a bottom electrode. As shown in fig. 45, the resonator bottom electrode 40 is formed on the quartz wafer 10 shown in step 6 by metal sputtering or vapor deposition. The bottom electrode 40 is composed of at least one layer of metal, wherein the metal in direct contact with the surface of the quartz wafer 10 should be chromium, titanium tungsten, molybdenum, gold, silver, etc.

Step 8: the first package substrate is bonded. As shown in fig. 46, the quartz wafer 10 and the quartz wafer or the first package substrate 50 in step 7 are bonded together by metal diffusion bonding, which may be gold, gold tin, copper tin bonding, or the like. Alternatively, the quartz wafer 10 and the quartz wafer or the first package substrate 50 may be bonded together in other manners, which are not limited herein. Other packaging materials may be used for the package substrate 50.

As shown in fig. 46, the first package substrate 50 is provided in advance with first conductive vias 54 electrically connected to the corresponding electrode lead-out portions.

In an embodiment of the present invention, the first package substrate 50 may be a quartz substrate, which may be a quartz wafer having a thickness of 20-200 μm and being completely consistent with the size and specification of the resonator wafer.

In the embodiment shown in fig. 46, in the case of metal bonding between the first package substrate 50 and the quartz wafer 10, a metal bonding layer 72A is further provided at the junction of the first package substrate 50 and the quartz wafer 10.

In a further embodiment, as shown in fig. 46, a filler metal layer 74A is provided between the first package substrate 50 and the quartz wafer 10, outside and spaced apart from the metal bonding layer 72A. As can be appreciated, the side on which the external connection is provided in the subsequent step 11 is only required to be provided with the filler metal layer 74A.

In one embodiment of the present invention, metal bonding layer 72A is spaced apart from filler metal layer 74A by a distance in the range of 2-200 microns.

Step 9: frequency measurement and modulation. As shown in fig. 47, the resonance frequency of the resulting quartz resonator is measured, and in the case where the measured resonance frequency is smaller than a predetermined resonance frequency, the mass of the top electrode 30 may be changed by means of, for example, a particle beam, to raise the resonance frequency of the corresponding quartz resonator. As can be appreciated, the frequency tuning step may not be performed in the event that the measured resonant frequency corresponds to the set frequency. This flow can be seen in fig. 51.

Step 10: and bonding the second package substrate. As shown in fig. 48, the structure in step 9 and the second package substrate or package quartz wafer 60 are bonded together by metal diffusion bonding, which may be gold, gold tin, copper tin bonding, or the like. Alternatively, the quartz wafer 10 and the second package substrate or the packaged quartz wafer 60 may be bonded together in other manners, which are not limited herein. Other packaging materials may be used for the second package substrate or the packaged quartz wafer 60.

As shown in fig. 48, the second package substrate 60 is provided in advance with second conductive vias 64 electrically connected to the corresponding electrode lead-out portions.

In the case where the second package substrate 60 is a quartz substrate in an embodiment of the present invention, it may be a quartz wafer having a thickness of 20-300 μm, which is completely in conformity with the wafer dimension specification of the quartz wafer 10.

In the embodiment shown in fig. 48, in the case of metal bonding between the second package substrate 60 and the quartz wafer 10, a metal bonding layer 72B is further provided at the junction of the second package substrate 60 and the quartz wafer 10.

In a further embodiment, as shown in fig. 48, a filler metal layer 74B is provided between the second package substrate 60 and the quartz wafer 10, outside and spaced apart from the metal bonding layer 72B. As can be appreciated, the side on which the external connection is provided in the subsequent step 11 is only required to be provided with the filler metal layer 74B.

In one embodiment of the present invention, metal bonding layer 72B is spaced apart from filler metal layer 74B by a distance in the range of 2-200 microns.

After step 10, a dicing operation may be performed to form a plurality of package particles, i.e. at least the quartz wafer is diced or split to form a plurality of mechanically separated individual sandwich-like resonator structures comprising the first package substrate 50, the quartz wafer 10 or the quartz piezoelectric layer and the second package substrate 60.

Step 11: shot plating to form the outer joint part 70: as shown in fig. 49, the external connection portion 70 is electrically connected to the second conductive via 64 on the side of the first package substrate 50 away from the top electrode and extends over the end surface of the sandwich structure to extend to the side of the second package substrate 60 away from the bottom electrode.

Although not shown, in the embodiments shown in fig. 39 to 49, the package substrate may be provided with a cavity in advance so that the electrode is opposite to the cavity when the package substrate is opposite to the corresponding electrode to be bonded to the quartz wafer.

The invention also proposes a method for manufacturing a quartz resonator, based on the embodiment shown in fig. 1-49, comprising the steps of:

providing a quartz wafer 10;

the quartz piezoelectric layer is formed by a quartz wafer 10, comprising the steps of: forming quartz piezoelectric layers corresponding to a plurality of quartz resonators on a quartz wafer at least by utilizing micro/nano electromechanical system lithography technology, wherein the quartz piezoelectric layers are of anti-high structures comprising bosses, and a first electrode layer comprising a first electrode and a second electrode layer comprising a second electrode are arranged on two sides of the quartz piezoelectric layers;

providing a first packaging substrate and a second packaging substrate, wherein the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate, the first packaging substrate is opposite to the first electrode layer, and the second packaging substrate is opposite to the second electrode layer; and

Segmentation: after forming the sandwich structure, at least the sandwich structure is cut or split to form a plurality of mechanically separated sandwich structure pellets.

In the embodiment of the invention, the micro/nano electromechanical system (M/NEMS) lithography technology is combined with wet etching/dry etching, so that the method can be used for: so that the size of the shot is less than 1mm by 1mm; and/or such that the thickness of the resonance region of the shot is less than 40 μm or the fundamental frequency of a resonator formed on the basis of the shot is above 40 MHz. Specifically, based on micro/nano electromechanical system lithography, a fine pattern for subsequent etching, which is convenient for forming a shot size smaller than 1mm×1mm, can be obtained, while based on wet etching/dry etching, a shot size smaller than 1mm×1mm can be obtained; based on wet etching/dry etching, a quartz piezoelectric layer thickness of less than 40 μm can be obtained instead of a mechanical mask.

In the present invention, the electrical connection through-hole or at least a part of the through-hole 14 is a tapered hole, or more specifically, the cross section of the electrical connection through-hole is a shape that is narrowed from the upper and lower sides of the boss toward the middle, which is advantageous in forming an electrical connection having good conductivity and stable resistance.

In the present invention, the resonance region refers to a region where the top electrode, the bottom electrode, the piezoelectric layer, and the cavity or the void overlap in the thickness direction of the piezoelectric layer in the formed quartz resonator. In the present invention, the resonance region of the wafer corresponds to a region in the wafer that needs to be formed as a resonance region of the resonator; the resonance region of the piezoelectric layer corresponds to a region in the piezoelectric layer that needs to be formed as a resonance region of the resonator. In the present invention, the non-resonance region is a portion other than the resonance region, and the non-resonance region of the piezoelectric layer refers to a region outside the resonance region of the piezoelectric layer in the horizontal direction or the lateral direction.

It should be noted that, in the present invention, each numerical range may be a median value of each numerical range, except that the end value is not explicitly indicated, and these are all within the protection scope of the present invention.

As can be appreciated by those skilled in the art, the quartz resonator according to the present invention may be used to form a quartz crystal oscillator chip or an electronic device comprising a quartz resonator. The electronic device may be an electronic component such as an oscillator, a communication device such as an intercom or a mobile phone, or a large-sized product such as an automobile to which a quartz resonator is applied.

Based on the above, the invention provides the following technical scheme:

1. a quartz resonator, comprising:

the device comprises a bottom electrode, a top electrode and a quartz piezoelectric layer, wherein the quartz piezoelectric layer is of a counter-high platform structure comprising a boss;

the package structure comprises a first package substrate, a second package substrate and a bonding sealing layer,

wherein:

the bonding sealing layer comprises a piezoelectric layer packaging part which is a part of a quartz piezoelectric layer, and the piezoelectric layer packaging part comprises the boss;

the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate.

2. The resonator of claim 1, wherein:

the quartz piezoelectric layer is of a single-sided anti-high platform structure.

3. The resonator of claim 1, wherein:

the quartz piezoelectric layer is of a double-sided anti-high platform structure.

4. The resonator of claim 1, wherein:

the first packaging substrate and the second packaging substrate are both quartz substrates.

5. The resonator of claim 1, wherein:

the size of the quartz piezoelectric layer is smaller than 1mm multiplied by 1mm; and/or

The thickness of the resonance area of the quartz piezoelectric layer is smaller than 40 mu m or the fundamental frequency of the resonator is above 40 MHz.

6. The resonator of any one of claims 1-5, wherein:

and one side of the first packaging substrate and the second packaging substrate facing the boss is a flat surface.

7. The resonator of any one of claims 1-5, wherein:

and a cavity is formed in one side of the first packaging substrate and/or the second packaging substrate, which faces the quartz piezoelectric layer, and the projection of the resonance area of the quartz resonator in the thickness direction falls into the cavity.

8. The resonator of any one of claims 1-7, wherein:

one electrode of the top electrode and the bottom electrode is a first electrode, the other electrode is a second electrode, the first electrode is positioned on one side of the quartz piezoelectric layer, and the second electrode is positioned on the other side of the quartz piezoelectric layer;

The quartz piezoelectric layer is provided with an electric connection through hole in a non-resonance area, and the electrode lead-out part of the first electrode extends to the other side of the quartz piezoelectric layer through the electric connection through hole so as to be positioned on the same side of the quartz piezoelectric layer as the second electrode.

9. The resonator according to claim 8, wherein:

the substrates in the first packaging substrate and the second packaging substrate which are positioned at the other side of the quartz piezoelectric layer are provided with substrate conductive through holes;

the substrate conductive via is electrically connected to a portion of the electrode lead-out portion of the first electrode extending to the other side of the quartz piezoelectric layer via the electrical connection via.

10. The resonator of claim 9, wherein:

the substrate conductive through holes and the electric connection through holes are staggered in the horizontal direction; or alternatively

The substrate conductive via is aligned with the electrical connection via in a thickness direction.

11. The resonator of claim 10, wherein:

the substrate conductive through hole is a straight hole, a conical hole or a hole with the upper side and the lower side reduced toward the middle.

12. The resonator of any one of claims 1-7, wherein:

one electrode of the top electrode and the bottom electrode is a first electrode, the other electrode is a second electrode, the first electrode is positioned on one side of the quartz piezoelectric layer, and the second electrode is positioned on the other side of the quartz piezoelectric layer;

The first packaging substrate is opposite to the first electrode, and the second packaging substrate is opposite to the second electrode;

the first packaging substrate is provided with a first packaging substrate conductive through hole, and the first packaging substrate conductive through hole is electrically connected with the electrode lead-out part of the first electrode;

the second packaging substrate is provided with a second packaging substrate conductive through hole, and the second packaging substrate conductive through hole is electrically connected with the electrode lead-out part of the second electrode;

the resonator further comprises an external connection part, wherein the external connection part is electrically connected with the first packaging substrate conductive through hole at one side of the first packaging substrate far away from the first electrode and extends to one side of the second packaging substrate far away from the second electrode through the end face of the sandwich structure of the resonator, or the external connection part is electrically connected with the second packaging substrate conductive through hole at one side of the second packaging substrate far away from the second electrode and extends to one side of the first packaging substrate far away from the first electrode through the end face of the sandwich structure of the resonator.

13. The resonator of claim 12, wherein:

the first packaging substrate and the second packaging substrate are respectively connected with the piezoelectric layer packaging part on two sides of the quartz piezoelectric layer based on a metal bonding layer;

The resonator further includes a filler metal layer spaced apart from the metal bonding layer on an outer side of the metal bonding layer, the filler metal layer being contiguous with the outer connection portion, optionally the metal bonding layer being spaced apart from the filler metal layer by a distance in the range of 2-200 microns.

14. An electronic device comprising a quartz resonator according to any of claims 1-13.

15. A method of manufacturing a quartz resonator, comprising the steps of:

providing a quartz wafer;

forming a quartz piezoelectric layer from a quartz wafer, comprising the steps of: forming quartz piezoelectric layers corresponding to a plurality of quartz resonators on a quartz wafer at least by utilizing micro/nano electromechanical system lithography technology, wherein the quartz piezoelectric layers are of anti-high structures comprising bosses, and a first electrode layer comprising a first electrode and a second electrode layer comprising a second electrode are arranged on two sides of the quartz piezoelectric layers;

providing a first packaging substrate and a second packaging substrate, wherein the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate, the first packaging substrate is opposite to the first electrode layer, and the second packaging substrate is opposite to the second electrode layer; and

Segmentation: after forming the sandwich structure, at least the sandwich structure is cut or split to form a plurality of mechanically separated sandwich structure pellets.

16. The method according to claim 15, wherein:

one electrode of the top electrode and the bottom electrode is a first electrode, the other electrode is a second electrode, the first electrode is positioned on one side of the quartz piezoelectric layer, and the second electrode is positioned on the other side of the quartz piezoelectric layer;

the step of forming the quartz piezoelectric layer from the quartz wafer further comprises: an electric connection through hole is arranged in a non-resonance area of the quartz piezoelectric layer, and an electrode lead-out part of the first electrode is suitable for extending to the other side of the quartz piezoelectric layer through the electric connection through hole so as to be positioned on the same side of the quartz piezoelectric layer as the second electrode;

the method further comprises the steps of: and arranging a substrate conductive through hole on the second packaging substrate, wherein the substrate conductive through hole is electrically connected with a part of the electrode lead-out part of the first electrode, which extends to the other side of the quartz piezoelectric layer through the electrical connection through hole.

17. The method according to claim 15, wherein:

in the step of providing the first package substrate and the second package substrate, the first package substrate is provided with a first package substrate conductive through hole, the first package substrate conductive through hole is electrically connected with the electrode lead-out part of the first electrode, and the second package substrate is provided with a second package substrate conductive through hole, and the second package substrate conductive through hole is electrically connected with the electrode lead-out part of the second electrode;

The method further comprises the steps of: providing an external connection for the sandwich structure shot to form an independent quartz resonator, wherein: the outer connecting part is electrically connected with the conductive through hole of the first packaging substrate at one side of the first packaging substrate far away from the first electrode and extends to one side of the second packaging substrate far away from the second electrode through the end face of the sandwich structure of the resonator, or is electrically connected with the conductive through hole of the second packaging substrate at one side of the second packaging substrate far away from the second electrode and extends to one side of the first packaging substrate far away from the first electrode through the end face of the sandwich structure of the resonator.

18. The method of claim 17, wherein:

the step of providing an external connection comprises: the external connection portion is formed by metal sputtering or vapor deposition.

19. The method according to claim 18, wherein:

the first packaging substrate and the second packaging substrate are respectively bonded with the boss at two sides of the quartz piezoelectric layer in a metal bonding mode to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate;

before providing the external connection, the method further comprises the steps of: a filling metal layer is arranged outside the bonding layer formed by metal bonding and is spaced from the bonding layer; and is also provided with

In the step of providing the outer connection, the outer connection is contacted with the filler metal layer to facilitate planarization of the outer connection at the end face of the sandwich structure.

Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims (19)

1. A quartz resonator, comprising:

the device comprises a bottom electrode, a top electrode and a quartz piezoelectric layer, wherein the quartz piezoelectric layer is of a counter-high platform structure comprising a boss;

the package structure comprises a first package substrate, a second package substrate and a bonding sealing layer,

wherein:

the bonding sealing layer comprises a piezoelectric layer packaging part which is a part of a quartz piezoelectric layer, and the piezoelectric layer packaging part comprises the boss;

the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate.

2. The resonator of claim 1, wherein:

The quartz piezoelectric layer is of a single-sided anti-high platform structure.

3. The resonator of claim 1, wherein:

the quartz piezoelectric layer is of a double-sided anti-high platform structure.

4. The resonator of claim 1, wherein:

the first packaging substrate and the second packaging substrate are both quartz substrates.

5. The resonator of claim 1, wherein:

the size of the quartz piezoelectric layer is smaller than 1mm multiplied by 1mm; and/or

The thickness of the resonance area of the quartz piezoelectric layer is smaller than 40 mu m or the fundamental frequency of the resonator is above 40 MHz.

6. The resonator according to any of claims 1-5, wherein:

and one side of the first packaging substrate and the second packaging substrate facing the boss is a flat surface.

7. The resonator according to any of claims 1-5, wherein:

and a cavity is formed in one side of the first packaging substrate and/or the second packaging substrate, which faces the quartz piezoelectric layer, and the projection of the resonance area of the quartz resonator in the thickness direction falls into the cavity.

8. The resonator according to any of claims 1-7, wherein:

one electrode of the top electrode and the bottom electrode is a first electrode, the other electrode is a second electrode, the first electrode is positioned on one side of the quartz piezoelectric layer, and the second electrode is positioned on the other side of the quartz piezoelectric layer;

The quartz piezoelectric layer is provided with an electric connection through hole in a non-resonance area, and the electrode lead-out part of the first electrode extends to the other side of the quartz piezoelectric layer through the electric connection through hole so as to be positioned on the same side of the quartz piezoelectric layer as the second electrode.

9. The resonator of claim 8, wherein:

the substrates in the first packaging substrate and the second packaging substrate which are positioned at the other side of the quartz piezoelectric layer are provided with substrate conductive through holes;

the substrate conductive via is electrically connected to a portion of the electrode lead-out portion of the first electrode extending to the other side of the quartz piezoelectric layer via the electrical connection via.

10. The resonator of claim 9, wherein:

the substrate conductive through holes and the electric connection through holes are staggered in the horizontal direction; or alternatively

The substrate conductive via is aligned with the electrical connection via in a thickness direction.

11. The resonator of claim 10, wherein:

the substrate conductive through hole is a straight hole, a conical hole or a hole with the upper side and the lower side reduced toward the middle.

12. The resonator according to any of claims 1-7, wherein:

one electrode of the top electrode and the bottom electrode is a first electrode, the other electrode is a second electrode, the first electrode is positioned on one side of the quartz piezoelectric layer, and the second electrode is positioned on the other side of the quartz piezoelectric layer;

The first packaging substrate is opposite to the first electrode, and the second packaging substrate is opposite to the second electrode;

the first packaging substrate is provided with a first packaging substrate conductive through hole, and the first packaging substrate conductive through hole is electrically connected with the electrode lead-out part of the first electrode;

the second packaging substrate is provided with a second packaging substrate conductive through hole, and the second packaging substrate conductive through hole is electrically connected with the electrode lead-out part of the second electrode;

the resonator further comprises an external connection part, wherein the external connection part is electrically connected with the first packaging substrate conductive through hole at one side of the first packaging substrate far away from the first electrode and extends to one side of the second packaging substrate far away from the second electrode through the end face of the sandwich structure of the resonator, or the external connection part is electrically connected with the second packaging substrate conductive through hole at one side of the second packaging substrate far away from the second electrode and extends to one side of the first packaging substrate far away from the first electrode through the end face of the sandwich structure of the resonator.

13. The resonator of claim 12, wherein:

the first packaging substrate and the second packaging substrate are respectively connected with the piezoelectric layer packaging part on two sides of the quartz piezoelectric layer based on a metal bonding layer;

The resonator further includes a filler metal layer spaced apart from the metal bonding layer on an outer side of the metal bonding layer, the filler metal layer being contiguous with the outer connection portion, optionally the metal bonding layer being spaced apart from the filler metal layer by a distance in the range of 2-200 microns.

14. An electronic device comprising a quartz resonator according to any of claims 1-13.

15. A method of manufacturing a quartz resonator, comprising the steps of:

providing a quartz wafer;

forming a quartz piezoelectric layer from a quartz wafer, comprising the steps of: forming quartz piezoelectric layers corresponding to a plurality of quartz resonators on a quartz wafer at least by utilizing micro/nano electromechanical system lithography technology, wherein the quartz piezoelectric layers are of anti-high structures comprising bosses, and a first electrode layer comprising a first electrode and a second electrode layer comprising a second electrode are arranged on two sides of the quartz piezoelectric layers;

providing a first packaging substrate and a second packaging substrate, wherein the first packaging substrate and the second packaging substrate are respectively connected with the boss at two sides of the quartz piezoelectric layer to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate, the first packaging substrate is opposite to the first electrode layer, and the second packaging substrate is opposite to the second electrode layer; and

Segmentation: after forming the sandwich structure, at least the sandwich structure is cut or split to form a plurality of mechanically separated sandwich structure pellets.

16. The method according to claim 15, wherein:

one electrode of the top electrode and the bottom electrode is a first electrode, the other electrode is a second electrode, the first electrode is positioned on one side of the quartz piezoelectric layer, and the second electrode is positioned on the other side of the quartz piezoelectric layer;

the step of forming the quartz piezoelectric layer from the quartz wafer further comprises: an electric connection through hole is arranged in a non-resonance area of the quartz piezoelectric layer, and an electrode lead-out part of the first electrode is suitable for extending to the other side of the quartz piezoelectric layer through the electric connection through hole so as to be positioned on the same side of the quartz piezoelectric layer as the second electrode;

the method further comprises the steps of: and arranging a substrate conductive through hole on the second packaging substrate, wherein the substrate conductive through hole is electrically connected with a part of the electrode lead-out part of the first electrode, which extends to the other side of the quartz piezoelectric layer through the electrical connection through hole.

17. The method according to claim 15, wherein:

in the step of providing the first package substrate and the second package substrate, the first package substrate is provided with a first package substrate conductive through hole, the first package substrate conductive through hole is electrically connected with the electrode lead-out part of the first electrode, and the second package substrate is provided with a second package substrate conductive through hole, and the second package substrate conductive through hole is electrically connected with the electrode lead-out part of the second electrode;

The method further comprises the steps of: providing an external connection for the sandwich structure shot to form an independent quartz resonator, wherein: the outer connecting part is electrically connected with the conductive through hole of the first packaging substrate at one side of the first packaging substrate far away from the first electrode and extends to one side of the second packaging substrate far away from the second electrode through the end face of the sandwich structure of the resonator, or is electrically connected with the conductive through hole of the second packaging substrate at one side of the second packaging substrate far away from the second electrode and extends to one side of the first packaging substrate far away from the first electrode through the end face of the sandwich structure of the resonator.

18. The method according to claim 17, wherein:

the step of providing an external connection comprises: the external connection portion is formed by metal sputtering or vapor deposition.

19. The method according to claim 18, wherein:

the first packaging substrate and the second packaging substrate are respectively bonded with the boss at two sides of the quartz piezoelectric layer in a metal bonding mode to form a sandwich structure comprising the first packaging substrate, the quartz piezoelectric layer and the second packaging substrate;

before providing the external connection, the method further comprises the steps of: a filling metal layer is arranged outside the bonding layer formed by metal bonding and is spaced from the bonding layer; and is also provided with

In the step of providing the outer connection, the outer connection is contacted with the filler metal layer to facilitate planarization of the outer connection at the end face of the sandwich structure.