CN117542841A - Total dose radiation strengthening characteristic characterization device - Google Patents
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- 238000012512 characterization method Methods 0.000 title claims abstract description 64
- 230000005855 radiation Effects 0.000 title claims abstract description 49
- 238000005728 strengthening Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000005510 radiation hardening Methods 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 22
- 238000005215 recombination Methods 0.000 claims description 22
- 230000006798 recombination Effects 0.000 claims description 20
- 230000003071 parasitic effect Effects 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 3
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- 238000011156 evaluation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 238000003379 elimination reaction Methods 0.000 description 1
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- 230000005527 interface trap Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
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Abstract
The invention discloses a total dose radiation strengthening characteristic characterization device, which relates to the field of semiconductor devices and comprises a substrate, a field oxide layer, a gate electrode, a first active region and a second active region, wherein the field oxide layer is arranged on the substrate, the gate electrode is prepared on the field oxide layer, the first active region and the second active region are distributed on two sides of the field oxide layer, the first active region at least comprises a first conductive type first doping region, the second active region at least comprises a first conductive type second doping region, and the side edge of the field oxide layer is in contact with the first conductive type first doping region and the first conductive type second doping region. The turn-on voltage of the characterization device is measured at a total dose of radiation, and the total dose radiation-hardening characteristics of the characterization device are evaluated based on the measured turn-on voltage. The characterization device can rapidly and accurately evaluate the total dose radiation strengthening effect of the device.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a total dose radiation strengthening characteristic characterization device.
Background
More and more high voltage circuits, such as power management chips and power drivers, have been used in aerospace and satellite electronics systems. However, as the operating voltage increases, the total dose ionizing radiation damage effect of high voltage MOSFETs remains a critical issue to be addressed in applications. In MOSFET devices, total dose conductanceSiO-generating 2 Accumulation of positive oxide trap charge and creation of interface traps at the silicon oxide interface. During irradiation, the oxide layer process and subsequent processes severely affect SiO 2 And the formation of fixed charges and SiO2 or Si interface surface states that lead to threshold voltage drift, mobility degradation and leakage current increase. In order for the chip to function properly in a harsh irradiation environment, the integrated circuit and the high voltage device must be subjected to a total dose radiation resistant consolidation process. It is therefore a great need to solve the problem how to quickly and accurately evaluate the total dose radiation reinforcement effect of high voltage devices to determine a reinforcement scheme against the total dose radiation.
Disclosure of Invention
The inventor provides a total dose radiation strengthening characteristic characterization device aiming at the problems and the technical requirements, and the technical scheme of the invention is as follows:
a total dose radiation strengthening characteristic characterization device comprises a substrate, a field oxide layer matched with the substrate, a gate electrode prepared on the field oxide layer, and a first active region and a second active region distributed on two sides of the field oxide layer,
the first active region comprises at least a first doped region of a first conductivity type;
the second active region comprises at least a second doped region of the first conductivity type;
the side edge of the field oxide layer is contacted with the first conductive type first doping region and the first conductive type second doping region;
the turn-on voltage of the characterization device is measured at a total dose of radiation, and the total dose radiation-hardening characteristics of the characterization device are evaluated based on the measured turn-on voltage.
The characterization device further comprises a well region of a second conductivity type prepared in the substrate;
the doping concentration of the second conductive type well region is larger than that of the substrate, and the first conductive type first doping region and the first conductive type second doping region are both positioned in the second conductive type well region.
The method comprises the further technical scheme that the device also comprises a carrier composite unit for preventing parasitic channels at the edge of the total dose irradiation lower field region from being opened, wherein the carrier composite unit is prepared in a well region;
the carrier composite unit comprises a second conductive type first carrier composite region which is in a closed ring shape and is overlapped with the field oxide layer and the end part of the gate electrode;
the first conductive type first doped region and the first conductive type second doped region are located in a closed region formed by the second conductive type first carrier composite region, and the second conductive type first carrier composite region is separated from the first conductive type first doped region and the first conductive type second doped region through the second conductive type well region.
The length direction of the gate electrode is the same as that of the field oxide layer, and two ends of the gate electrode exceed the edge of the first carrier composite region of the second conductivity type in the length direction.
The further technical proposal is that the carrier composite unit also comprises a second carrier composite region with a second conductivity type,
the second conductive type second carrier composite region is prepared under the field oxide layer, and both ends of the second conductive type second carrier composite region are contacted with the second conductive type first carrier composite region;
the second conductive type second carrier composite region is positioned between the first conductive type first doped region and the first conductive type second doped region, and the second conductive type second carrier composite region is separated from the first conductive type first doped region and the first conductive type second doped region through the second conductive type well region.
The further technical scheme is that the distance between the side edge of the first active region, which is close to the gate electrode, and the first side of the gate electrode is not smaller than 0.5 mu m, and the first side of the gate electrode is close to the first active region;
the distance between the side edge of the second active region, which is close to the gate electrode, and the second side of the gate electrode, which is close to the second active region, is not less than 0.5 mu m.
The first active region further comprises a first conductive type third doped region, wherein the first conductive type third doped region is positioned in the first conductive type first doped region, and the doping concentration of the first conductive type third doped region is larger than that of the first conductive type first doped region;
the second active region further comprises a fourth doped region of the second conductivity type, the fourth doped region of the first conductivity type is located in the second doped region of the first conductivity type, and the doping concentration of the fourth doped region of the first conductivity type is greater than that of the second doped region of the first conductivity type.
The further technical scheme is that the gate electrode is a polysilicon gate electrode or a metal gate electrode;
when the gate electrode is a metal gate electrode, the characterization device further comprises a metal front dielectric layer prepared on the field oxide layer and the substrate, the metal gate electrode is positioned on the metal front dielectric layer, and the metal gate electrode is isolated from the field oxide layer through the metal front dielectric layer.
The further technical proposal is that the first carrier composite region of the second conductivity type and the second carrier composite region of the second conductivity type are prepared, and the implantation dosage range of ions is 1e13cm -2 To 1e15cm -2 。
The further technical proposal is that the first doping area of the first conductivity type and the second doping area of the first conductivity type are prepared, and the implantation dosage range of the ions is 1e12cm -2 To 1e14cm -2 。
The beneficial technical effects of the invention are as follows:
the invention provides a total dose radiation strengthening characteristic characterization device which comprises a gate electrode, a first active region and a second active region, wherein the gate electrode is prepared on a field oxide layer, the first active region and the second active region are distributed on two sides of the field oxide layer, one of the first active region and the second active region is used as a source electrode of the characterization device, the other one of the first active region and the second active region is used as a drain electrode of the characterization device, and a gate electrode of the characterization device is formed through the gate electrode. And under the total dose irradiation, loading an operating voltage on the drain electrode of the characterization device, and evaluating the total dose radiation strengthening characteristic of the characterization device by measuring the starting voltage of the characterization device.
And a carrier composite unit is arranged in the well region, so that parasitic channels at the edge of the field region are prevented from being opened under total dose irradiation, and the influence of field region edge leakage on the evaluation of the starting voltage of the device is effectively eliminated. The turn-on voltage of the characterization device is determined by the doping concentration of the carrier recombination unit and the thickness of the field oxide layer under the total dose irradiation, so that the device can more accurately evaluate the strengthening effect of the total dose radiation of the field region, thereby determining the field region strengthening scheme of the total dose radiation resisting process. The device has a simple structure, the layers are all the existing layers in the total dose radiation resisting process, and the device is well integrated into the total dose radiation resisting process through the arrangement of different gate electrodes and source and drain regions.
Drawings
Fig. 1 is a cross-sectional view of one embodiment of the present invention in the direction AB.
Fig. 2 is a schematic diagram of an embodiment of the present invention in a top view.
Fig. 3 is a cross-sectional view of one embodiment of the present invention in the CD direction.
Fig. 4 is a cross-sectional view of another embodiment of the present invention in the direction AB.
Fig. 5 is a schematic view of another embodiment of the present invention in a top view.
Fig. 6 is a cross-sectional view of another embodiment of the present invention in the CD direction.
Fig. 7 is a cross-sectional view of another embodiment of the invention in the direction AB.
Reference numerals: the semiconductor device comprises a 1-substrate, a 2-P type well region, a 3-P type first carrier composite region, a 4-P type second carrier composite region, a 5-N type first doping region, a 6-N type second doping region, a 7-N type third doping region, an 8-N type fourth doping region, a 9-first field oxide layer, a 10-polysilicon gate electrode, an 11-first active region, a 12-second active region, a 13-metal gate electrode, a 14-first interval oxide layer, a 15-metal front dielectric layer, a 16-second field oxide layer and a 17-second interval oxide layer.
Detailed Description
The following describes the embodiments of the present invention further with reference to the drawings.
In order to evaluate the total dose radiation strengthening effect of a high voltage device, the invention provides a total dose radiation strengthening characteristic characterization device, taking a first conductive type as an N type as an example, comprising a substrate 1, a field oxide layer matched with the substrate 1, a gate electrode prepared on the field oxide layer, and a first active region 11 and a second active region 12 distributed on two sides of the field oxide layer,
the first active region 11 at least comprises an N-type first doped region 5;
the second active region 12 includes at least an N-type second doped region 6;
the side edge of the field oxide layer is contacted with the N-type first doped region 5 and the N-type second doped region 6;
the turn-on voltage of the characterization device is measured at a total dose of radiation, and the total dose radiation-hardening characteristics of the characterization device are evaluated based on the measured turn-on voltage.
In one embodiment of the present invention, the substrate 1 may be made of a conventional material, such as a Silicon-On-Insulator (SOI) substrate, and the conductivity type of the substrate 1 may be P-type or N-type, so as to meet the application requirements. The field oxide layer may be the first field oxide layer 9 or the second field oxide layer 16, wherein the first field oxide layer 9 may be formed by thermal oxidation or deposition, the second field oxide layer 16 may be STI (Shallow Trench Isolation) field oxide layer, and specific process conditions and processes may be consistent with the prior art when the field oxide layer is prepared by thermal oxidation, deposition and STI processes. Fig. 1 is a cross-sectional view illustrating an embodiment of a device AB direction, where the AB direction is consistent with the AB direction illustrated in fig. 2, where a P-type substrate is selected as the substrate 1, a first field oxide layer 9 is selected as the field oxide layer, and the first field oxide layer 9 is prepared on the substrate 1 and is used as a gate dielectric layer of the device.
As shown in fig. 1, the first active region 11 and the second active region 12 are distributed on two sides of the first field oxide layer 9 independently, the first active region 11 at least includes an N-type first doped region 5, and the second active region 12 at least includes an N-type second doped region 6. The N-type first doped region 5 is partially positioned in the first active region 11, and the N-type first doped region 5 positioned outside the first active region 11 is contacted with the first field oxide layer 9; the N-type second doped region 6 is partially located in the second active region 12, and the N-type second doped region 6 located outside the second active region 12 is in contact with the first field oxide layer 9. The first active region 11 is formed based on the N-type first doped region 5 not covered by the first field oxide layer 9, and the second active region 12 is formed based on the N-type second doped region 6 not covered by the first field oxide layer 9. In general, the doping concentration of the N-type first doped region 5 is the same as that of the N-type second doped region 6.
The partial area of the N-type first doped region 5 outside the first active region 11 overlaps the gate electrode, and the partial area of the N-type second doped region 6 outside the second active region 12 overlaps the gate electrode, so as to form a channel region of the characterization device, where the channel region is located below the first field oxide layer 9 and between the N-type first doped region 5 and the N-type second doped region 6. The overlapping is that when the grid electrode is projected to the N-type first doping region 5 and the N-type second doping region 6, the grid electrode overlaps with the projections of the N-type first doping region 5 and the N-type second doping region 6.
The characterization device also includes a spacer oxide layer for spacing adjacent characterization devices, the spacer oxide layer may be a field oxide layer formed in the same process as the field oxide layer. The spacer oxide layer may be the first spacer oxide layer 14 or the second spacer oxide layer 17, the first spacer oxide layer 14 may be formed by thermal oxidation or deposition, and the second spacer oxide layer 17 may be an STI spacer oxide layer. When the field oxide layer is the first field oxide layer 9, the spacer oxide layer is the first spacer oxide layer 14; when the field oxide layer is the second field oxide layer 16, the spacer oxide layer is the second spacer oxide layer 17. In one embodiment of the present invention, the first spacer oxide layer 14 is formed on the substrate 1 and is distributed on the sides of the first active region 11 and the second active region 12 away from the gate electrode. In general, one of the first active region 11 and the second active region 12 is used as a source electrode of the characterization device, the other is used as a drain electrode of the characterization device, and a gate electrode is used to form a gate electrode of the characterization device.
The turn-on voltage of the characterization device described above is measured at a total dose of radiation and the total dose radiation-hardening characteristics of the characterization device are evaluated based on the measured turn-on voltage. In general, when the turn-on voltage of the characterization device is measured, the working voltage is loaded on the drain electrode of the characterization device, and meanwhile, the drain current and the gate-source voltage of the characterization device are measured to obtain a transfer characteristic curve of the drain current changing along with the gate-source voltage, wherein the threshold voltage shown in the transfer characteristic curve is the turn-on voltage of the characterization device, and the larger the turn-on voltage of the characterization device is, the better the reinforcing effect of the total dose radiation is, and the stronger the total dose radiation resistance of the device is.
In order to facilitate the preparation and improve the performance of the device, the characterization device further comprises a P-type well region 2 prepared in the substrate 1;
the doping concentration of the P-type well region 2 is greater than that of the substrate 1, and the N-type first doped region 5 and the N-type second doped region 6 are both located in the P-type well region 2.
In general, the substrate 1 includes a front surface and a back surface corresponding to the front surface, as shown in fig. 1, the P-type well region 2 extends vertically from the front surface of the substrate 1 to the back surface of the substrate 1, and the extending depth is smaller than the thickness of the substrate 1, and when the implementation is performed, the doping concentration and thickness of the P-type well region 2 can be selected according to practical requirements. The first N-type doped region 5 and the second N-type doped region 6 extend vertically from the surface of the P-type well region 2 into the P-type well region 2, and the extending depth is smaller than the depth of the P-type well region 2, and the surface of the P-type well region 2 is the front surface of the substrate 1. The first active region 11 and the second active region 12 are located in the P-type well region 2. In general, the junction pushing depth of the N-type first doped region 5 and the N-type second doped region 6 in the P-type well region 2 is the same. The junction pushing depth is the depth of the N-type first doped region 5 and the N-type second doped region 6 extending vertically from the surface of the P-type well region 2 into the P-type well region 2.
In order to characterize the reinforcing characteristic of the total dose radiation under the conditions of higher radiation quantity and higher working voltage, in implementation, the ion implantation dose and junction pushing depth prepared by the N-type first doping region 5 and the N-type second doping region 6 can be adjusted, and when the ion implantation dose is lower and the junction pushing depth is deeper, the breakdown voltage of the source region and the drain region of the characterization device is higher, so that the evaluation of the starting voltage under the conditions of higher radiation quantity and higher working voltage can be satisfied to characterize the reinforcing characteristic of the total dose radiation of the device. Wherein the ions areThe implantation dose range is 1e12cm -2 To 1e14cm -2 The specific implementation can be selected according to actual needs.
Further, the characterization device further comprises a carrier recombination unit for preventing the parasitic channel at the edge of the total dose irradiation lower field region from being opened, wherein the carrier recombination unit is prepared in the P-type well region 2;
the carrier composite unit comprises a P-type first carrier composite region 3, wherein the P-type first carrier composite region 3 is in a closed ring shape and overlapped with the first field oxide layer 9 and the end part of the gate electrode;
the N-type first doped region 5 and the N-type second doped region 6 are located in the region formed by the P-type first carrier composite region 3, and the P-type first carrier composite region 3 is separated from the N-type first doped region 5 and the N-type second doped region 6 by the P-type well region 2.
As shown in fig. 1, a P-type first carrier recombination region 3 is prepared in the P-type well region 2 and is in contact with the first spacer oxide layer 14. Specifically, the P-type first carrier composite region 3 extends vertically from the surface of the P-type well region 2 into the P-type well region 2, and the depth of the P-type first carrier composite region 3 extending into the P-type well region 2 is smaller than the depth of the N-type first doped region 5 and the N-type second doped region 6.
Fig. 2 is a schematic diagram illustrating an embodiment of a top view of a device, in which a P-type first carrier composite region 3 surrounds an N-type first doped region 5 and an N-type second doped region 6 to form a rectangular closed region, and the N-type first doped region 5 and the N-type second doped region 6 are separated from the P-type first carrier composite region by a P-type well region 2. The P-type first carrier recombination zone 3 overlaps the first active zone 11 and the second active zone 12. And, the two ends of the strip gate electrode also overlap the P-type first carrier composite region 3, and the definition of the overlapping corresponds to the case that the gate electrode overlaps the N-type first doped region 5 and the N-type second doped region 6, and specific reference is made to the above description.
Under total dose irradiation, radiation induced oxidation trap charges can cause parasitic channels at the field edges to open, thereby causing field edge leakage, affecting the accuracy of evaluating the total dose radiation-hardening characteristics. As shown in fig. 1, N-type carriers formed on the silicon surface by oxide layer trap charges generated by total dose radiation are recombined by charges of the P-type first carrier recombination region 3 under total radiation, so that parasitic channels on the field edges below the first spacer oxide layer 14 are prevented from being opened, and the influence of field edge leakage below the first spacer oxide layer 14 on reinforcement characteristic evaluation accuracy is effectively eliminated.
Further, the carrier composite unit further comprises a P-type second carrier composite region 4, wherein the P-type second carrier composite region 4 is prepared under the first field oxide layer 9, and two ends of the P-type second carrier composite region 4 are contacted with the P-type first carrier composite region 3;
the P-type second carrier composite region 4 is located between the N-type first doped region 5 and the N-type second doped region 6, and the P-type second carrier composite region 4 is spaced from the N-type first doped region 5 and the N-type second doped region 6 by the P-type well region 2.
As shown in fig. 1, the P-type second carrier composite region 4 extends vertically from the lower side of the first field oxide layer 9 into the P-type well region 2, and the depth of the P-type second carrier composite region 4 extending from the P-type well region 2 into the P-type well region 2 is smaller than the depth of the N-type first doped region 5 and the N-type second doped region 6. The projection from the first field oxide layer 9 to the P-type second carrier recombination zone 4 is performed, and the projection area of the first field oxide layer 9 completely covers the projection area of the P-type second carrier recombination zone 4. As shown in fig. 3, the first field oxide layer 9 has the same length as the gate electrode 10, and both ends of the gate electrode extend beyond the edges of the P-type first carrier recombination zone 3 and the P-type well zone 2 in the length direction.
As shown in fig. 2, the P-type second carrier composite region 4 is strip-shaped, and both ends thereof are in contact with the P-type first carrier composite region 3, so as to divide a rectangular closed region formed by the P-type first carrier composite region 3 into two rectangular closed regions, and the N-type first doped region 5 and the N-type second doped region 6 are respectively located in the rectangular regions. Under the total dose irradiation, the P-type second carrier composite region 4 can prevent the parasitic channel at the edge of the field region below the first field oxide layer 9 from being opened, and further eliminate the influence of the electric leakage at the edge of the field region on the reinforcement characteristic evaluation.
The P-type first carrier composite region 3 and the P-type second carrier composite region 4 enable the turn-on voltage of the characterization device to be completely determined by the doping concentrations of the P-type first carrier composite region 3 and the P-type second carrier composite region 4 and the thickness of the gate dielectric layer, namely the first field oxide layer 9 in the total dose radiation environment, so that the device can evaluate the reinforcement characteristic of the total dose radiation of the device more accurately.
Further, when preparing the P-type first carrier composite region 3 and the P-type second carrier composite region 4, the implantation dose range of the ions is 1e13cm -2 To 1e15cm -2 。
Specifically, by adjusting the doping concentrations of the P-type first carrier composite region 3 and the P-type second carrier composite region 4, the influence of field edge leakage on reinforcement characteristic evaluation can be eliminated under the irradiation of higher radiation dose of the characterization device, so that the characterization device has good adaptability under different irradiation environments, and the evaluation requirement of the total dose radiation reinforcement effect is met. Generally, the doping concentrations of the P-type first carrier recombination region 3 and the P-type second carrier recombination region 4 are the same, and the specific implementation can be selected according to the elimination requirement of field region edge leakage.
Further, the length direction of the gate electrode is the same as that of the first field oxide layer 9, and two ends of the gate electrode extend beyond the edge of the P-type first carrier recombination zone 3 in the length direction.
In one embodiment of the present invention, the gate electrode is a polysilicon gate electrode 10, and the length direction is the CD direction shown in fig. 2. In the length direction, the polysilicon gate electrode 10 spans the annular P-type first carrier composite region 3 and the P-type well region 2 and is used for leading out the gate electrode of the device, so that the influence of the corrosion process on the characteristic of the channel of the device in the process of manufacturing is avoided. In the width direction, i.e. AB direction in fig. 2, the P-type second carrier composite region 4 is located between the N-type first doped region 5 and the N-type second doped region 6, and the width of the polysilicon gate electrode 10 is larger than that of the strip-shaped P-type second carrier composite region, so that it is ensured that the P-type second carrier composite region 4 does not affect the breakdown voltage of the characterization device, and only affects the channel concentration of the device, thereby being used for characterizing the total dose radiation strengthening effect.
Further, a distance between a side of the first active region 11, which is close to the polysilicon gate electrode 10, and a first side of the polysilicon gate electrode 10, which is close to the first active region 11, is not less than 0.5 μm;
the side of the second active region 12 adjacent to the polysilicon gate electrode 10 is spaced from the second side of the polysilicon gate electrode 10 by no less than 0.5 μm, the second side of the polysilicon gate electrode 10 being adjacent to the second active region 12.
Specifically, by providing a spacing between the polysilicon gate electrode 10 and the active region, the routing of the polysilicon interconnect between adjacent devices is simulated, and by measuring the turn-on voltage of the characterization device prior to total dose irradiation, the field turn-on problem caused by the polysilicon interconnect is monitored, preventing the polysilicon interconnect from affecting the evaluation of the reinforcement characteristics. The method of measuring the turn-on voltage is consistent with the above. In general, the distance between the side of the first active region 11 near the polysilicon gate electrode 10 and the first side of the polysilicon gate electrode 10, and the distance between the side of the second active region 12 near the polysilicon gate electrode 10 and the second side of the polysilicon gate electrode 10 are the same, and when the above-mentioned method is implemented under the condition that the distance is not less than 0.5 μm, the above-mentioned distance can be selected according to practical needs.
Further, the first active region 11 further includes an N-type third doped region 7, where the N-type third doped region 7 is located in the N-type first doped region 5, and a doping concentration of the N-type third doped region 7 is greater than that of the N-type first doped region 5;
the second active region 12 further includes an N-type fourth doped region 8, where the N-type fourth doped region 8 is located in the N-type second doped region 6, and the doping concentration of the N-type fourth doped region 8 is greater than the doping concentration of the N-type second doped region 6.
Specifically, the N-type third doped region 7 is located in the N-type first doped region 5, and extends vertically from the surface of the P-type well region 2 into the N-type first doped region 5, where the N-type third doped region 7 is used for ohmic contact of the source region, i.e., the N-type first doped region 5. The N-type fourth doped region 8 is located in the N-type second doped region 6, and extends vertically from the surface of the P-type well region 2 into the N-type second doped region 6, and the N-type fourth doped region 8 is used for ohmic contact of the drain region, i.e., the N-type second doped region 6. Generally, the depth of the N-type third doped region 7 extending vertically into the N-type first doped region 5 and the depth of the N-type fourth doped region 8 extending vertically into the N-type second doped region 6 are the same, and the doping concentrations of the N-type first doped region 5 and the N-type second doped region 6 are the same.
In addition, the first conductivity type in the above embodiment is N-type, and the characterizing device may form an N-type conductive channel, and in implementation, the conductivity types of the P-type well region 2, the P-type first carrier composite region 3, and the P-type second carrier composite region 4 in the above embodiment may be replaced by N-type; the conductivity types of the N-type first doping region 5, the N-type second doping region 6, the N-type third doping region 7 and the N-type fourth doping region are replaced by P-type, and the device is characterized in that a P-type conductive channel can be formed.
Further, when the gate electrode is a metal gate electrode 13, the device further comprises a pre-metal dielectric layer 15 prepared on the field oxide layer and the substrate 1, the metal gate electrode 13 is located on the pre-metal dielectric layer 15, and the metal gate electrode 13 is isolated from the field oxide layer by the pre-metal dielectric layer 15.
In another embodiment of the present invention, the first conductivity type is also N-type, the field oxide layer is selected as the first field oxide layer 9, the spacer oxide layer is selected as the first spacer oxide layer 14, but the gate electrode is a metal gate electrode 13, as shown in fig. 4, the pre-metal dielectric layer 15 is prepared on the first field oxide layer 9, the first spacer oxide layer 14 and the substrate 1, the metal gate electrode 13 is prepared on the pre-metal dielectric layer 15, and the metal gate electrode 13 is isolated from the first field oxide layer 9 by the pre-metal dielectric layer 15, and the metal gate electrode 13 corresponds to the first field oxide layer 9. The positive correspondence is that, when the metal gate electrode 13 projects toward the first field oxide layer 9, the projection area of the metal gate electrode 13 falls completely within the projection area of the first field oxide layer 9. As shown in fig. 5, a partial region of the N-type first doped region 5 located outside the first active region 11 overlaps the metal gate electrode 13, and a partial region of the N-type second doped region 6 located outside the second active region 12 overlaps the metal gate electrode 13 to form the channel region. The structure of the characterization device is the same as the above embodiment except for the metal gate electrode 13 and the pre-metal dielectric layer 15.
As shown in fig. 6, the lengths of the metal gate electrode 13, the pre-metal dielectric layer 15 and the first field oxide layer 9 are the same, and all exceed the edges of the P-type first carrier recombination zone 3 and the P-type well zone 2. When the gate electrode adopts the metal gate electrode 13, the metal front dielectric layer 15 and the first field oxide layer 9 are used together as the gate dielectric layer of the characterization device, and at this time, the turn-on voltage of the characterization device is determined by the doping concentration of the P-type first carrier composite region 3 and the P-type second carrier composite region 4, the thickness of the first field oxide layer 9 and the thickness of the metal front dielectric layer 15, so that the total dose radiation strengthening characteristic of the device with the gate adopting the metal material can be evaluated. Preferably, the material of the pre-metal dielectric layer 15 may be silicon dioxide, and the thickness and the material of the pre-metal dielectric layer 15 may be selected according to practical requirements.
In another embodiment of the present invention, the first conductivity type is N-type, the field oxide layer is selected from the second field oxide layer 16, the spacer oxide layer is selected from the second spacer oxide layer 17, and the gate electrode is selected from the polysilicon gate electrode 10. As shown in fig. 7, the polysilicon gate electrode 10 is located over a second field oxide layer 16, the second field oxide layer 16 acting as the gate dielectric layer for the characterization device. The second spacer oxide layer 17 is distributed on the sides of the first active region 11 and the second active region 12 away from the gate electrode. The structure of the characterization device is the same as the embodiment described above in which the gate electrode employs a polysilicon gate electrode 10, except for the second field oxide layer 16 and the second spacer oxide layer 17. The turn-on voltage of the characterization device is completely determined by the doping concentrations of the P-type first carrier recombination zone 3 and the P-type second carrier recombination zone 4, and the thickness of the gate dielectric layer, i.e., the second field oxide layer 16.
In summary, the total dose radiation strengthening characteristic characterization device provided by the invention is used for evaluating the total dose radiation strengthening capability of the device, and the first carrier composite region 3 and the second carrier composite region 4 are formed by injecting in the field region of the device, so that the starting voltage and the electric leakage condition of the device after total dose radiation are ensured to be mainly determined by the doping concentration and the field oxide layer thickness of the first carrier composite region 3 and the second carrier composite region 4 in the field region, and the field strengthening effect of the total dose radiation resisting process can be determined by evaluating the characterization device. The device has a simple structure, the layers are all the existing layers in the total dose radiation resisting process, and the device is well integrated into the total dose radiation resisting process through the arrangement of different gate electrodes and source and drain regions.
The above is only a preferred embodiment of the present invention, and the present invention is not limited to the above examples. It is to be understood that other modifications and variations which may be directly derived or contemplated by those skilled in the art without departing from the spirit and concepts of the present invention are deemed to be included within the scope of the present invention.
Claims (10)
1. A total dose radiation strengthening characteristic characterization device is characterized by comprising a substrate, a field oxide layer matched with the substrate, a gate electrode prepared on the field oxide layer, a first active region and a second active region distributed on two sides of the field oxide layer, wherein,
the first active region comprises at least a first doped region of a first conductivity type;
the second active region comprises at least a second doped region of the first conductivity type;
the side edge of the field oxide layer is contacted with the first conductive type first doping region and the first conductive type second doping region;
the turn-on voltage of the characterization device is measured at a total dose of radiation, and the total dose radiation-hardening characteristics of the characterization device are evaluated based on the measured turn-on voltage.
2. The total dose radiation-hardened characterization device of claim 1, wherein the characterization device further comprises a well region of a second conductivity type fabricated within the substrate;
the doping concentration of the second conductive type well region is larger than that of the substrate, and the first conductive type first doping region and the first conductive type second doping region are both positioned in the second conductive type well region.
3. The total dose radiation hardened characterization device of claim 2, further comprising a carrier recombination unit for preventing an opening of a parasitic channel at an edge of the total dose irradiated lower field region, the carrier recombination unit being fabricated within the well region;
the carrier composite unit comprises a second conductive type first carrier composite region which is in a closed ring shape and is overlapped with the field oxide layer and the end part of the gate electrode;
the first conductive type first doped region and the first conductive type second doped region are located in a closed region formed by the second conductive type first carrier composite region, and the second conductive type first carrier composite region is separated from the first conductive type first doped region and the first conductive type second doped region through the second conductive type well region.
4. A total dose radiation-hardened characterization device according to claim 3 wherein the gate electrode has a length that is the same as the field oxide layer and both ends of the gate electrode extend beyond the edges of the second conductivity type first carrier recombination zone in the length direction.
5. The total dose radiation-hardened characterizing device defined in claim 3, wherein the carrier-recombination unit further comprises a second carrier-recombination region of a second conductivity type,
the second conductive type second carrier composite region is prepared under the field oxide layer, and both ends of the second conductive type second carrier composite region are contacted with the second conductive type first carrier composite region;
the second conductive type second carrier composite region is positioned between the first conductive type first doped region and the first conductive type second doped region, and the second conductive type second carrier composite region is separated from the first conductive type first doped region and the first conductive type second doped region through the second conductive type well region.
6. The total dose radiation hardened feature characterization device of claim 1,
the distance between the side edge of the first active region, which is close to the gate electrode, and the first side of the gate electrode, which is close to the first active region, is not less than 0.5 mu m;
the distance between the side edge of the second active region, which is close to the gate electrode, and the second side of the gate electrode, which is close to the second active region, is not less than 0.5 mu m.
7. The total dose radiation hardened feature characterization device of claim 1,
the first active region further comprises a first conductive type third doped region, the first conductive type third doped region is located in the first conductive type first doped region, and the doping concentration of the first conductive type third doped region is larger than that of the first conductive type first doped region;
the second active region further comprises a fourth doped region of the second conductivity type, the fourth doped region of the first conductivity type is located in the second doped region of the first conductivity type, and the doping concentration of the fourth doped region of the first conductivity type is greater than that of the second doped region of the first conductivity type.
8. The total dose radiation hardened characterization device of claim 1, wherein the gate electrode is a polysilicon gate electrode or a metal gate electrode;
when the gate electrode is a metal gate electrode, the characterization device further comprises a metal front dielectric layer prepared on the field oxide layer and the substrate, the metal gate electrode is positioned on the metal front dielectric layer, and the metal gate electrode is isolated from the field oxide layer through the metal front dielectric layer.
9. The device of claim 5, wherein the second conductivity type first carrier recombination zone and the second conductivity type second carrier recombination zone are fabricated with an ion implantation dose in the range of 1e13cm -2 To 1e15cm -2 。
10. The device of claim 1, wherein the first doped region of the first conductivity type and the second doped region of the first conductivity type are prepared with an implant dose of ions in a range of 1e12cm -2 To 1e14cm -2 。
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