CN117542758A - Single wafer semiconductor etching equipment and etching method - Google Patents
Single wafer semiconductor etching equipment and etching method Download PDFInfo
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- CN117542758A CN117542758A CN202311594787.4A CN202311594787A CN117542758A CN 117542758 A CN117542758 A CN 117542758A CN 202311594787 A CN202311594787 A CN 202311594787A CN 117542758 A CN117542758 A CN 117542758A
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- 238000005530 etching Methods 0.000 title claims abstract description 119
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 84
- 239000011261 inert gas Substances 0.000 claims abstract description 24
- 238000005086 pumping Methods 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 abstract description 28
- 239000007788 liquid Substances 0.000 abstract description 21
- 239000002699 waste material Substances 0.000 abstract description 19
- 239000012535 impurity Substances 0.000 abstract description 16
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention relates to the technical field of semiconductor etching, and discloses single wafer semiconductor etching equipment and an etching method, wherein the single wafer semiconductor etching equipment comprises the following steps: the outer cover is arranged on the platen, and an etching cavity is formed at the inner side of the outer cover; the support part is arranged in the etching cavity, a rotating part is rotationally arranged on the support part, and the top of the rotating part is used for clamping a wafer to be etched; a solution transporting device disposed above the rotating member; the top surface of the supporting part is provided with an annular air outlet, and the annular air outlet can provide inert gas with set pressure for a gap formed between the supporting part and a wafer to be etched; one side of the outer cover is provided with an exhaust port connected with the air exhaust device. The air extractor sucks the gas in the etching cavity to prevent the chemical gas generated by etching from staying in the etching cavity; the inert gas provided by the annular gas outlet enables the gap to form gas outlet pressure, prevents chemical gas, waste liquid and impurities from entering from the gap, prevents corrosion and pollution to the wafer, and prevents the chemical gas and the waste liquid from escaping and diffusing to the outside.
Description
Technical Field
The invention relates to the technical field of semiconductor etching, in particular to single wafer semiconductor etching equipment and an etching method.
Background
The most common of semiconductor etching is dry etching and wet etching, which differ in that wet etching uses a solvent or solution for etching. Wet etching is a chemical reaction process, which means that the chemical reaction between the solution and the pre-etching material is used to remove the part not masked by the masking film material, so as to achieve the purpose of etching.
For etching of single wafer semiconductors, the wafer is generally in a state of rotating at a high speed, and then chemical solution is uniformly dispersed from the center of the wafer to the edge of the wafer, so that the purpose of etching one side of the single wafer is achieved. However, the chemical solution volatilizes to form chemical gas in the etching process, and the chemical gas is easy to gather in the etching cavity to corrode and pollute the surface of the wafer; and, waste liquid and impurity after the etching can strike on the lateral wall of etching chamber and produce and splash, and be used for fixed and realizing the rotatory rotating member of wafer high speed has certain clearance, and the bottom surface of wafer also has certain clearance with the rotating member, makes waste liquid and impurity that splashes easily to and the chemical gas that the etching produced get into clearance department, can not only produce corruption and pollution to wafer and rotating member, can also lead to escape diffusion such as chemical gas and waste liquid to outside.
Accordingly, there is a need for a single wafer semiconductor etching apparatus and method that at least partially address the problems of the prior art.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the invention is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
To at least partially solve the above problems, the present invention provides a monolithic wafer semiconductor etching apparatus, including: the outer cover is arranged on the platen, and an etching cavity is formed at the inner side of the outer cover; the support part is arranged in the etching cavity, a rotating part is rotatably arranged on the support part, and the top of the rotating part is used for clamping a wafer to be etched; the solution conveying device is arranged above the rotating component and is used for conveying solution to the top surface of the wafer to be etched; the top surface of the supporting part is provided with an annular air outlet, and the annular air outlet can provide inert gas with set pressure for a gap formed between the supporting part and a wafer to be etched; one side of the outer cover is provided with an exhaust port connected with the air exhaust device.
Preferably, the maximum value of the set pressure satisfies a condition that the set pressure is smaller than a pressure for deforming the wafer to be etched; the minimum value of the set pressure meets the condition that the set pressure is larger than the pressure in the etching cavity.
Preferably, an annular air cavity communicated with the annular air outlet is arranged in the top end of the supporting part, and the annular air cavity is connected with the air supply device through a connecting pipe; the annular air outlet faces the edge direction of the bottom surface of the wafer to be etched.
Preferably, the outer part of the top end of the supporting part is sleeved with an annular guide cover, the top end size of the annular guide cover is larger than the bottom end size of the annular guide cover, and the top end of the annular guide cover forms an annular air outlet; a plurality of communication holes are uniformly distributed on the side wall of the annular air cavity.
Preferably, the top outside of supporting part is equipped with annular notch, the center one side that annular notch is close to the supporting part is the arcwall face, be equipped with the annular plate to the central one side slope of supporting part on the outer loop of annular notch, the top of annular plate is equipped with the arc that extends to arcwall face one side of annular notch, form annular gas outlet between the arcwall face of arc and annular notch, the one end downwardly extending that annular plate was kept away from to the arc is equipped with annular baffle, form annular air cavity between annular baffle, arc, annular plate and the bottom surface of annular notch, form the passageway that is used for intercommunication annular air cavity and annular gas outlet between annular baffle and the bottom surface of annular notch.
Preferably, an annular air pumping cavity is formed on the outer side of the outer cover, a plurality of air vents communicated with the etching cavity are formed in the inner annular wall of the annular air pumping cavity, an air outlet is formed in the outer annular wall of the annular air pumping cavity, and the air outlet is higher than the air vents.
Preferably, a first air guide sleeve and a second air guide sleeve are arranged in the annular air extraction cavity at intervals up and down, and the first air guide sleeve and the second air guide sleeve are arranged between the air outlet and the air vent; the top end of the first air guide sleeve is connected with the inner annular wall of the annular air pumping cavity, and the bottom end of the first air guide sleeve and the outer annular wall of the annular air pumping cavity form a first annular channel; the bottom end of the second air guide sleeve is connected with the outer annular wall of the annular air pumping cavity, and the top end of the second air guide sleeve and the inner annular wall of the annular air pumping cavity form a second annular channel; the diameter of the bottom end of the first air guide sleeve is smaller than that of the top end of the second air guide sleeve.
Preferably, a liquid outlet is arranged on the bottom surface of the bedplate in the etching cavity.
Preferably, a heating device for heating the inert gas is further arranged on the outer side of the connecting pipe, and the heating device can enable the temperature at the edge of the wafer to be etched to be higher than the temperature at the center of the wafer to be etched.
An etching method of a monolithic wafer semiconductor etching apparatus, comprising:
when the wafer to be etched starts to be etched, inert gas with set pressure is provided for a gap formed between the support part and the wafer to be etched through an annular air outlet arranged on the top surface of the support part, and meanwhile, the gas in the etching cavity is pumped outwards through an air pumping device;
and the gas pressure at the gap and the gas pressure in the etching cavity are monitored in real time, and the gas pressure at the gap is larger than the gas pressure in the etching cavity through adjusting a gas supply device and a gas exhaust device for supplying gas to the annular gas outlet.
Compared with the prior art, the invention at least comprises the following beneficial effects:
according to the single wafer semiconductor etching equipment and the etching method, the gas in the etching cavity is pumped through the air pumping device, and chemical gas generated during etching can be pumped to the outside of the etching cavity for treatment, so that the chemical gas is prevented from staying in the etching cavity;
the inert gas provided by the annular gas outlet can form certain gas outlet pressure at the gap, so that although the chemical gas is not timely pumped away, the chemical gas cannot enter the gap to be contacted with the lower side of the wafer to be etched to corrode and pollute the wafer, and further the chemical gas can be prevented from escaping to the outside of the etching cavity from the gap generated at the joint of the supporting part and the rotating part; and moreover, waste liquid and impurities which are splashed by the impact with the inner wall of the etching cavity can be blown away under the air outlet pressure formed at the clearance, so that the lower part of the wafer to be etched and the joint of the supporting part and the rotating part are prevented from being corroded or polluted, the etching quality of the wafer is ensured, and the service life of etching equipment is prolonged.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of the external structure of a monolithic wafer semiconductor etching apparatus according to the present invention;
FIG. 2 is a schematic diagram showing the internal structure of a single wafer semiconductor etching apparatus according to the present invention;
FIG. 3 is a schematic view of a portion of the enlarged structure of FIG. 2 according to the present invention;
FIG. 4 is a schematic diagram showing a second internal structure of a single wafer semiconductor etching apparatus according to the present invention;
FIG. 5 is a schematic view of a portion of the enlarged structure of FIG. 4 according to the present invention;
FIG. 6 is a schematic view of the structure of an annular pumping chamber in a monolithic wafer semiconductor etching apparatus according to the present invention;
fig. 7 is a schematic three-dimensional structure of the outer cover and the annular pumping chamber in the single wafer semiconductor etching apparatus according to the present invention.
Detailed Description
The present invention is described in further detail below with reference to the drawings and examples to enable those skilled in the art to practice the invention by referring to the description.
It will be understood that terms, such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
As shown in fig. 1 and 2, the present invention provides a single wafer semiconductor etching apparatus, comprising: an outer cover 2 arranged on the platen 1, and an etching cavity 3 is formed on the inner side of the outer cover 2; the support part 4 is arranged in the etching cavity 3, a rotating part 5 is rotatably arranged on the support part 4, and the top of the rotating part 5 is used for clamping a wafer 10 to be etched; a solution transporting device 6 disposed above the rotating member 5 for transporting a solution to the top surface of the wafer 10 to be etched; the top surface of the supporting part 4 is provided with an annular air outlet 410, and the annular air outlet 410 can provide inert gas with set pressure to a gap 9 formed between the supporting part 4 and a wafer 10 to be etched; an exhaust port 210 connected with an air extracting device is arranged on one side of the outer cover 2.
Through holes are formed in the positions, corresponding to the rotating parts 5, of the platen 1, and are used for enabling the rotating parts 5 to be connected with a driving part for driving the rotating parts to rotate, and the rotating parts 5 can clamp and fix the wafer 10 to be etched in a negative pressure adsorption mode; the top end of the rotating component 5 is rotatably connected to the supporting part 4, and the middle part of the supporting part 4 is used for accommodating the rotating component 5;
when etching is started, the rotating component 5 drives the wafer 10 to be etched to rotate at a high speed, chemical solution is sprayed to the center of the top surface of the wafer 10 to be etched through the solution conveying device 6, the nozzle of the solution conveying device 6 faces the center of the top surface of the wafer 10 to be etched, the chemical solution is uniformly dispersed to realize etching along with the high-speed rotation of the wafer 10 to be etched, meanwhile, the annular air outlet 410 provides inert gas with set pressure to the gap 9, and meanwhile, the air extractor sucks gas in the etching cavity 3, so that the chemical gas generated during etching can be sucked to the outside of the etching cavity 3 for processing, and the chemical gas is prevented from staying in the etching cavity 3;
the inert gas provided by the annular gas outlet 410 can form a certain gas outlet pressure at the gap 9, so that although the chemical gas is not timely pumped away, the chemical gas can not enter the gap 9 to be contacted with the lower side of the wafer 10 to be etched to generate corrosion and pollution to the wafer, and the chemical gas can be prevented from escaping to the outside of the etching cavity 3 from the gap generated at the joint of the supporting part 4 and the rotating part 5; in addition, waste liquid and impurities which are splashed by the impact with the inner wall of the etching cavity 3 can be blown away under the air outlet pressure formed at the gap 9, so that the lower part of the wafer 10 to be etched and the joint of the supporting part 4 and the rotating part 5 are prevented from being corroded or polluted, the etching quality of the wafer is ensured, and the service life of etching equipment is prolonged;
in addition, the edge of the wafer 10 to be etched is not fixedly supported, and the annular air outlet 410 can provide uniform supporting force for the edge of the wafer 10 to be etched, so that deformation is prevented during high-speed rotation.
Further, the maximum value of the set pressure satisfies a condition that the set pressure is smaller than a pressure for deforming the wafer 10 to be etched; the minimum value of the set pressure satisfies the condition that the set pressure is larger than the pressure in the etching chamber 3.
Because the wafer 10 to be etched is thin, if the gas outlet pressure of the annular gas outlet 410 is too high, the wafer will deform, resulting in wafer damage; therefore, the set pressure needs to be within a preset range, that is, the gas outlet pressure formed at the gap 9 should be smaller than the pressure for deforming the wafer 10 to be etched and larger than the pressure in the etching chamber 3 during etching, so as to prevent the wafer from being damaged, and simultaneously ensure that chemical gas, waste liquid, impurities and the like cannot enter the gap 9.
As shown in fig. 2, further, a drain port 110 is provided on the bottom surface of the platen 1 in the etching chamber 3; the waste liquid accumulated in the bottom of the etching chamber 3 is discharged through the exhaust port 110.
As shown in fig. 2 to 5, in one embodiment, an annular air chamber 420 communicating with the annular air outlet 410 is provided in the top end of the supporting portion 4, and the annular air chamber 420 is connected with an air supply device through a connecting pipe 7; the annular air outlet 410 faces the bottom edge of the wafer 10 to be etched.
The gas supply device is used for supplying inert gas with variable pressure, the inert gas is preferably nitrogen, the inert gas is firstly filled into the annular gas cavity 420 through the connecting pipe 7 and then is uniformly discharged from the annular gas outlet 410, so that the gas outlet pressure of each part of the gap 9 is uniform; the annular air outlet 410 faces the bottom edge of the wafer 10 to be etched, so that the air outlet pressure of the gaps 9 is ensured, and meanwhile, the included angle between the air outlet direction of the annular air outlet 410 and the wafer 10 to be etched is reduced as much as possible, and the impact force of inert gas on the wafer 10 to be etched can be reduced.
Further, two annular air chamber 420 structures and corresponding arrangement of annular air outlets 410 are provided:
as shown in fig. 3, the first annular air chamber 420 has a structure that an annular guiding cover 430 is sleeved outside the top end of the supporting portion 4, the top end size of the annular guiding cover 430 is larger than the bottom end size thereof, and an annular air outlet 410 is formed at the top end of the annular guiding cover 430; a plurality of communication holes 421 are uniformly distributed on the side wall of the annular air chamber 420.
The annular gas outlet 410 is communicated with the annular gas cavity 420 through a plurality of communication holes 421, and inert gas can be simultaneously blown into the annular guide cover 430 from the plurality of communication holes 421 and then can be uniformly blown to the gap 9 from the annular gas outlet 410 along the annular guide cover 430, so that the gas outlet pressure of the gap 9 is uniform, and the capability of preventing chemical gas, waste liquid, impurities and the like from entering the gap 9 is balanced;
in addition, the outer diameter of the top end of the annular guide cover 430 is equal to or larger than the diameter of the wafer 10 to be etched.
As shown in fig. 5, the second type of annular air chamber 420 is configured such that an annular notch 440 is provided at the outer side of the top end of the supporting portion 4, an arc surface 441 is provided at one side of the annular notch 440 near the center of the supporting portion 4, an annular plate 450 inclined to one side of the center of the supporting portion 4 is provided on the outer ring of the annular notch 440, an arc plate 460 extending to one side of the arc surface 441 of the annular notch 440 is provided at the top end of the annular plate 450, an annular air outlet 410 is formed between the arc plate 460 and the arc surface 441 of the annular notch 440, an annular baffle 470 is provided at one end of the arc plate 460 far away from the annular plate 450 and extends downwards, an annular air chamber 420 is formed between the annular baffle 470, the arc plate 460, the annular plate 450 and the bottom surface of the annular notch 440, and a channel for communicating the annular air chamber 420 and the annular air outlet 410 is formed between the annular baffle 470 and the bottom surface of the annular notch 440.
The arc plate 460 is arranged to arch upwards, and one end of the arc plate connected with the annular plate 450 is arranged lower than the other end of the arc plate; the bottom of the annular air chamber 420 is connected with an air supply device through a connecting pipe 7, and the connecting pipe 7 is arranged near the lower end of the arc-shaped plate 460.
After entering the annular air cavity 420, the inert gas can firstly contact with the arc-shaped plate 460, move along the arc-shaped plate 460 and form a convolution in the annular air cavity 420 under the blocking of the annular baffle 470, so that after a certain amount of gas is filled in the annular air cavity 420, the inert gas can uniformly pass through the channel and is guided to the annular air outlet 410 along the arc-shaped surface 441, and finally, the inert gas is uniformly blown to the edge of the bottom surface of the wafer 10 to be etched through the annular air outlet 410;
the inclined ring plate 450 and the arc plates 460 with different heights at the two ends can further prevent splashed waste liquid, impurities and the like from entering the gap 9, the annular air outlet 410 enables inert gas to be blown to the edge of the bottom surface of the wafer 10 to be etched, the exposed bottom surface of the wafer 10 to be etched can be isolated from the outside through annular air flow, and the joint of the supporting part 4 and the rotating part 5 can be isolated from the outside so as to prevent chemical gas, waste liquid and impurities.
As shown in fig. 6, in one embodiment, an annular air pumping chamber 8 is formed on the outer side of the outer cover 2, a plurality of air vents 810 communicated with the etching chamber 3 are formed on the inner annular wall of the annular air pumping chamber 8, an air outlet 210 is formed on the outer annular wall of the annular air pumping chamber 8, and the air outlet 210 is higher than the air vents 810.
The annular pumping chamber 8 can isolate waste liquid flowing down along the etching chamber 3 from the exhaust port 210 to prevent the waste liquid from being pumped to the exhaust port 210, and the height of the air port 810 is higher than that of the waste liquid stored at the bottom of the etching chamber 3, so that when the pumping device works, gas in the etching chamber 3 can enter the air port 810 from top to bottom, then enter the exhaust port 210 from bottom to top, and finally be pumped to the outside of the etching chamber 3;
the plurality of air ports 810 can enable the air in the etching cavity 3 to be uniformly pumped into the annular pumping cavity 8, so that the air pressure distribution in the circumferential direction in the etching cavity 3 is ensured to be uniform.
As shown in fig. 6 and 7, in one embodiment, a first air guide sleeve 820 and a second air guide sleeve 830 are arranged in the annular air extraction cavity 8 at intervals from top to bottom, and the first air guide sleeve 820 and the second air guide sleeve 830 are arranged between the air outlet 210 and the air inlet 810; the top end of the first air guide sleeve 820 is connected with the inner annular wall of the annular air pumping cavity 8, and the bottom end of the first air guide sleeve is connected with the outer annular wall of the annular air pumping cavity 8 to form a first annular channel 840; the bottom end of the second air guide sleeve 830 is connected with the outer annular wall of the annular air pumping cavity 8, and the top end of the second air guide sleeve is connected with the inner annular wall of the annular air pumping cavity 8 to form a second annular channel 850; the bottom end diameter of the first pod 820 is smaller than the top end diameter of the second pod 830.
Since impurities may be mixed in the gas in the etching chamber 3 pumped by the pumping device, the impurities are easy to form accumulation at the exhaust port 210 to influence pumping capacity after long-term use, and therefore, two air guide covers are arranged for blocking;
impurities enter the annular pumping cavity 8 along with pumping air flow, firstly pass through the second air guide cover 830, when the air flow collides with the second air guide cover 830, part of the impurities fall under the action of self gravity, the air flow collides with the first air guide cover 820 under the action of the air guide of the second air guide cover 830, and the other part of the impurities fall, and as the bottom diameter of the first air guide cover 820 is smaller than the top diameter of the second air guide cover 830, the impurities fall into waste liquid stored at the bottom from the second annular channel 850 and are finally discharged together with the waste liquid;
in addition, if the air flow is mixed with waste liquid or water vapor, liquid particles can fall into the waste liquid stored at the bottom as impurities, so that the subsequent difficulty in waste gas treatment is reduced.
In one embodiment, a heating device for heating the inert gas is further arranged at the outer side of the connecting pipe 7, and the heating device can make the temperature at the edge of the wafer 10 to be etched higher than the temperature at the center of the wafer.
Since the chemical solution is uniformly dispersed outwards from the center of the wafer 10 to be etched, the etching efficiency of the chemical solution can be reduced along with the increase of the dispersed radius of the chemical solution, and particularly when the chemical solution reaches the edge of the wafer 10 to be etched, the etching efficiency is lower, so that the etching of the wafer 10 to be etched is uneven, and the etching quality is affected; therefore, the method of heating the edge of the wafer 10 to be etched is adopted to improve the etching efficiency and ensure the etching uniformity; therefore, the inert gas can be heated by the heating device and then is uniformly discharged from the annular gas outlet 410, and is blown to the edge of the wafer 10 to be etched, so that the etching efficiency is improved.
The invention also provides an etching method of the single wafer semiconductor etching equipment, which comprises the following steps:
when the wafer 10 to be etched starts to be etched, inert gas with set pressure is provided to a gap 9 formed between the support part 4 and the wafer 10 to be etched through an annular gas outlet 410 arranged on the top surface of the support part 4, and meanwhile, the gas in the etching cavity 3 is pumped outwards through an air pumping device;
the gas pressure at the gap 9 and the gas pressure in the etching chamber 3 are monitored in real time, and the gas pressure at the gap 9 is made larger than the gas pressure in the etching chamber 3 by adjusting the gas supply device and the gas exhaust device for supplying gas to the annular gas outlet 410.
The maximum value of the set pressure satisfies the condition that the set pressure is smaller than the pressure for deforming the wafer 10 to be etched; the minimum value of the set pressure satisfies the condition that the set pressure is larger than the pressure in the etching chamber 3.
The obtaining of the gas pressure at the gap 9 may be that the relation between the gas pressure at the gap 9 and the gas pressure in the annular air cavity 420 is obtained in advance, a first gas pressure sensor is arranged in the annular air cavity 420, and when etching is performed, the gas pressure at the gap 9 can be obtained by substituting data detected by the first gas pressure sensor in the annular air cavity 420 into the relation between the gas pressure at the gap 9 and the gas pressure in the annular air cavity 420;
the pressure in the etching cavity 3 can be provided with a plurality of second air pressure sensors along the circumferential direction on the inner wall of the etching cavity 3, and the average value detected by the plurality of second air pressure sensors can be used as the pressure in the etching cavity 3; the pressure in the etching chamber 3 is preferably less than atmospheric pressure when etching is performed, and exhaust gas can be prevented from escaping to the outside of the etching chamber 3.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown and described, it is well suited to various fields of use for which the invention would be readily apparent to those skilled in the art, and accordingly, the invention is not limited to the specific details and illustrations shown and described herein, without departing from the general concepts defined in the claims and their equivalents.
Claims (10)
1. A single wafer semiconductor etching apparatus, comprising: an outer cover (2) arranged on the bedplate (1), wherein an etching cavity (3) is formed at the inner side of the outer cover (2); the support part (4) is arranged in the etching cavity (3), the support part (4) is rotatably provided with a rotary part (5), and the top of the rotary part (5) is used for clamping a wafer (10) to be etched; a solution delivery device (6) arranged above the rotating member (5) for delivering a solution to the top surface of the wafer (10) to be etched; the top surface of the supporting part (4) is provided with an annular air outlet (410), and the annular air outlet (410) can provide inert gas with set pressure to a gap (9) formed between the supporting part (4) and a wafer (10) to be etched; one side of the outer cover (2) is provided with an exhaust port (210) connected with an air exhaust device.
2. The single wafer semiconductor etching apparatus according to claim 1, wherein the maximum value of the set pressure satisfies a condition of being smaller than a pressure at which the wafer (10) to be etched is deformed; the minimum value of the set pressure meets the condition that the set pressure is larger than the pressure in the etching cavity (3).
3. The single wafer semiconductor etching apparatus according to claim 1, wherein an annular air chamber (420) communicating with the annular air outlet (410) is provided in the top end of the supporting portion (4), the annular air chamber (420) being connected to the air supply device through a connecting pipe (7); the annular air outlet (410) faces the bottom edge direction of the wafer (10) to be etched.
4. A single wafer semiconductor etching apparatus according to claim 3, wherein an annular guide cover (430) is sleeved outside the top end of the supporting portion (4), the top end size of the annular guide cover (430) is larger than the bottom end size thereof, and the top end of the annular guide cover (430) forms an annular air outlet (410); the side wall of the annular air cavity (420) is uniformly provided with a plurality of communication holes (421).
5. A single wafer semiconductor etching apparatus according to claim 3, wherein the outer side of the top end of the supporting portion (4) is provided with an annular notch (440), one side of the annular notch (440) close to the center of the supporting portion (4) is provided with an arc surface (441), an outer ring of the annular notch (440) is provided with an annular plate (450) inclined to the center side of the supporting portion (4), the top end of the annular plate (450) is provided with an arc plate (460) extending to one side of the arc surface (441) of the annular notch (440), an annular air outlet (410) is formed between the arc plate (460) and the arc surface (441) of the annular notch (440), one end of the arc plate (460) away from the annular plate (450) extends downwards to be provided with an annular baffle (470), the arc plate (460), the annular plate (450) and a bottom surface of the annular notch (440) form a channel for communicating the annular air chamber (420) with the annular air outlet (410).
6. The single wafer semiconductor etching apparatus according to claim 1, wherein an annular pumping chamber (8) is formed on the outer side of the outer cover (2), a plurality of vents (810) communicated with the etching chamber (3) are formed in the inner annular wall of the annular pumping chamber (8), an exhaust port (210) is formed in the outer annular wall of the annular pumping chamber (8), and the exhaust port (210) is higher than the vents (810).
7. The single wafer semiconductor etching apparatus according to claim 6, wherein a first pod (820) and a second pod (830) are arranged in the annular pumping chamber (8) at intervals up and down, and the first pod (820) and the second pod (830) are disposed between the exhaust port (210) and the vent port (810); the top end of the first air guide sleeve (820) is connected with the inner annular wall of the annular air pumping cavity (8), and the bottom end of the first air guide sleeve and the outer annular wall of the annular air pumping cavity (8) form a first annular channel (840); the bottom end of the second air guide sleeve (830) is connected with the outer annular wall of the annular air pumping cavity (8), and the top end of the second air guide sleeve and the inner annular wall of the annular air pumping cavity (8) form a second annular channel (850); the bottom end diameter of the first pod (820) is smaller than the top end diameter of the second pod (830).
8. The single wafer semiconductor etching apparatus according to claim 1, wherein a drain port (110) is provided at a bottom surface of a platen (1) located in the etching chamber (3).
9. A single wafer semiconductor etching apparatus according to claim 3, characterized in that the outside of the connecting tube (7) is further provided with heating means for heating the inert gas, which heating means are capable of making the temperature at the edge of the wafer (10) to be etched higher than the temperature at the center thereof.
10. An etching method of a single wafer semiconductor etching apparatus according to any one of claims 1 to 9, comprising:
when the wafer (10) to be etched starts to be etched, inert gas with set pressure is provided for a gap (9) formed between the supporting part (4) and the wafer (10) to be etched through an annular gas outlet (410) arranged on the top surface of the supporting part (4), and meanwhile, the gas in the etching cavity (3) is pumped outwards through an air pumping device;
the gas pressure at the gap (9) and the gas pressure in the etching cavity (3) are monitored in real time, and the gas pressure at the gap (9) is larger than the gas pressure in the etching cavity (3) by adjusting a gas supply device and a gas exhaust device for supplying gas to the annular gas outlet (410).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311594787.4A CN117542758A (en) | 2023-11-28 | 2023-11-28 | Single wafer semiconductor etching equipment and etching method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311594787.4A CN117542758A (en) | 2023-11-28 | 2023-11-28 | Single wafer semiconductor etching equipment and etching method |
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|---|---|---|---|---|
| US20020073922A1 (en) * | 1996-11-13 | 2002-06-20 | Jonathan Frankel | Chamber liner for high temperature processing chamber |
| CN1759474A (en) * | 2003-03-06 | 2006-04-12 | 积水化学工业株式会社 | Plasma processing apparatus and method |
| JP2007207811A (en) * | 2006-01-31 | 2007-08-16 | Sumco Corp | Sheet-type etching equipment of wafer |
| JP2008016642A (en) * | 2006-07-06 | 2008-01-24 | Seiko Epson Corp | Apparatus and method for manufacturing semiconductor device |
| CN108878319A (en) * | 2018-06-22 | 2018-11-23 | 武汉新芯集成电路制造有限公司 | A kind of rotating etching device and wet etching machine bench |
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2023
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020073922A1 (en) * | 1996-11-13 | 2002-06-20 | Jonathan Frankel | Chamber liner for high temperature processing chamber |
| CN1759474A (en) * | 2003-03-06 | 2006-04-12 | 积水化学工业株式会社 | Plasma processing apparatus and method |
| JP2007207811A (en) * | 2006-01-31 | 2007-08-16 | Sumco Corp | Sheet-type etching equipment of wafer |
| JP2008016642A (en) * | 2006-07-06 | 2008-01-24 | Seiko Epson Corp | Apparatus and method for manufacturing semiconductor device |
| CN108878319A (en) * | 2018-06-22 | 2018-11-23 | 武汉新芯集成电路制造有限公司 | A kind of rotating etching device and wet etching machine bench |
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