CN117539105A - On-chip all-optical switch, preparation method of on-chip all-optical switch and optoelectronic device - Google Patents
On-chip all-optical switch, preparation method of on-chip all-optical switch and optoelectronic device Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/365—Non-linear optics in an optical waveguide structure
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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Abstract
The invention provides an on-chip all-optical switch, a preparation method of the on-chip all-optical switch and an optoelectronic device, wherein the on-chip all-optical switch comprises a substrate, an insulating layer arranged on the upper surface of the substrate, a two-dimensional topological insulator layer arranged on the upper surface of the insulating layer, an isolation layer arranged on the upper surface of the two-dimensional topological insulator layer and a micro-nano array layer arranged on the upper surface of the isolation layer; the micro-nano array layer and the two-dimensional topological insulator layer generate enhanced or suppressed optical saturated absorption effect under the excitation of pump light with different polarization directions and/or different wavelengths, the enhanced saturated absorption is formed based on a high-concentration electric field induced by plasmon resonance of the local surface of the micro-nano array layer, and the suppressed saturated absorption is formed based on two-photon absorption. By changing the polarization direction or wavelength of the pumping light, the transmittance intensity of the detection light can be modulated, so that the optical-induced on and off modes are provided, the power consumption of the on-chip all-optical switch is reduced, and the response speed of the on-chip all-optical switch is improved.
Description
Technical Field
The invention relates to the technical field of on-chip all-optical switches, in particular to an on-chip all-optical switch, a preparation method of the on-chip all-optical switch and an optoelectronic device.
Background
With the rapid development of artificial intelligence, economic data analysis and cloud computing, the demand for ultra-high speed and energy efficient computing has grown exponentially. The traditional electronic computing processor under the existing von neumann architecture is difficult to simultaneously meet high-speed computing and low-energy consumption, photon computing is a leading technology for solving the explosive growth of mass data computing requirements in the big data era due to the characteristics of low power consumption, ultra-large bandwidth, ultra-fast processing speed, high integration level and the like, and a promising alternative method is provided for full-optical computing by taking photons as an information carrier.
Currently, integrated photon computing typically relies on third order nonlinear optics to achieve full light control. For a general optical integrated switch device, the nonlinear coefficient of the material is not high, and a high incident light power is often required to realize a strong optical nonlinear effect, but the requirement of low power consumption in integrated optics is difficult to adapt. Moreover, the ultra-fast response time and the strong nonlinear sensitivity generally show an inherent characteristic in the optical material, and the strong nonlinear sensitivity can be obtained only at the cost of the slow response time, so that the power consumption of the existing integrated all-optical switching device is high and the response speed is slow.
Disclosure of Invention
The invention provides an on-chip all-optical switch, a preparation method of the on-chip all-optical switch and an optoelectronic device, which are used for solving the problems of high power consumption and low response speed of the existing integrated all-optical switch device.
In a first aspect, the present invention provides an on-chip all-optical switch comprising: the device comprises a substrate, an insulating layer, a two-dimensional topological insulator layer, an isolation layer and a micro-nano array layer, wherein the insulating layer is arranged on the upper surface of the substrate, the two-dimensional topological insulator layer is arranged on the upper surface of the insulating layer, the isolation layer is arranged on the upper surface of the two-dimensional topological insulator layer, and the micro-nano array layer is arranged on the upper surface of the isolation layer; wherein,
the substrate is used for supporting the insulating layer;
the insulating layer is used for isolating the substrate and the two-dimensional topological insulator layer;
the isolation layer is used for isolating the two-dimensional topological insulator layer and the micro-nano array layer;
the micro-nano array layer is used for generating an optical saturation absorption effect with the two-dimensional topological insulator layer under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effect is used for indicating that the detection light passes through or does not pass through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light.
According to the on-chip all-optical switch provided by the invention, the two-dimensional topological insulator layer comprises at least one topological insulator layer; the two-dimensional topological insulator layer comprises at least one of the following: a band gap less than a first predetermined threshold, a metallic surface state, broadband absorption, carrier mobility greater than a second predetermined threshold.
According to the on-chip all-optical switch provided by the invention, the micro-nano array layer is a two-dimensional periodically arranged grating structure or photonic crystal structure, and the grating structure comprises any one of the following components: cuboid-shaped grating structure, cube-shaped grating structure, cylindrical grating structure, polyhedral-shaped grating structure.
According to the on-chip all-optical switch provided by the invention, the material of the micro-nano array layer is a metal material, an alloy material of a plurality of metal materials or a semiconductor material.
According to the on-chip all-optical switch provided by the invention, the substrate is made of silicon, the isolating layer is made of titanium or chromium, and the insulating layer is made of aluminum oxide or polymethyl methacrylate.
In a second aspect, the present invention further provides a method for preparing an on-chip all-optical switch, which is applied to the on-chip all-optical switch in the first aspect, and includes:
Preparing an insulating layer, a two-dimensional topological insulator layer, an isolating layer and a micro-nano array layer in advance;
sequentially transferring the insulating layer to a substrate, transferring the two-dimensional topological insulator layer to the insulating layer, transferring the isolating layer to the two-dimensional topological insulator layer, and transferring the micro-nano array layer to the isolating layer to obtain an on-chip all-optical switch; the micro-nano array layer and the two-dimensional topological insulator layer generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effects are used for indicating that detection light is transmitted or not transmitted through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light.
According to the preparation method of the on-chip all-optical switch, the two-dimensional topological insulator layer is obtained based on at least one layer of two-dimensional topological insulator grown by adopting molecular beam epitaxy equipment or is obtained based on stacking different single-layer two-dimensional topological insulator films; the two-dimensional topological insulator layer comprises at least one of the following: a band gap less than a first predetermined threshold, a metallic surface state, broadband absorption, carrier mobility greater than a second predetermined threshold.
According to the preparation method of the on-chip all-optical switch provided by the invention, the isolation layer is obtained based on a thermal evaporation method.
According to the preparation method of the on-chip all-optical switch provided by the invention, the micro-nano array layer is obtained based on electron beam lithography, electron beam deposition, electron beam etching or electron beam stripping modes.
In a third aspect, the present invention also provides an optoelectronic device comprising: based on the on-chip all-optical switch according to the first aspect.
In a fourth aspect, the present invention further provides a device for manufacturing an on-chip all-optical switch, including:
the preparation module is used for preparing an insulating layer, a two-dimensional topological insulator layer, an isolating layer and a micro-nano array layer in advance;
the stacking module is used for sequentially transferring the insulating layer to a substrate, transferring the two-dimensional topological insulator layer to the insulating layer, transferring the isolating layer to the two-dimensional topological insulator layer and transferring the micro-nano array layer to the isolating layer to obtain an on-chip all-optical switch; the micro-nano array layer and the two-dimensional topological insulator layer generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effects are used for indicating that detection light is transmitted or not transmitted through the two-dimensional topological insulator layer.
The invention provides an on-chip all-optical switch, a preparation method of the on-chip all-optical switch and an optoelectronic device, which comprise the following steps: the device comprises a substrate, an insulating layer, a two-dimensional topological insulator layer, an isolation layer and a micro-nano array layer, wherein the insulating layer is arranged on the upper surface of the substrate, the two-dimensional topological insulator layer is arranged on the upper surface of the insulating layer, the isolation layer is arranged on the upper surface of the two-dimensional topological insulator layer, and the micro-nano array layer is arranged on the upper surface of the isolation layer; wherein the substrate is used for supporting the insulating layer; the insulating layer is used for isolating the substrate and the two-dimensional topological insulator layer; the isolation layer is used for isolating the two-dimensional topological insulator layer and the micro-nano array layer; the micro-nano array layer is used for generating an optical saturation absorption effect with the two-dimensional topological insulator layer under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effect is used for indicating that the detection light passes through or does not pass through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light. By changing the polarization direction and/or wavelength of the pump light incident to the two-dimensional topological insulator layer and the micro-nano array layer, the two-dimensional topological insulator layer and the micro-nano array layer generate optical saturation absorption effect under the excitation of pump light with different polarization directions and/or different wavelengths, and the polarization sensitivity characteristic of the optical saturation absorption effect depends on the isotropy characteristic of the two-dimensional topological insulator layer, so that the saturation absorption intensity under the detection light with specific wavelength is changed. By changing the polarization direction or wavelength of the pumping light, the transmittance intensity of the detection light can be modulated, so that the on-chip all-optical switch has light-induced on and off modes, the power consumption of the on-chip all-optical switch is reduced, the response speed of the on-chip all-optical switch is improved, and the on-chip all-optical switch can be applied to next-generation all-optical signal switches and computing devices.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an on-chip all-optical switch according to the present invention;
FIG. 2 is a schematic diagram of a second embodiment of an on-chip all-optical switch according to the present invention;
FIG. 3 is a schematic diagram of the structure of the micro-nano array layer provided by the present invention;
FIG. 4 is a schematic diagram of a transmission spectrum of the pump light provided by the present invention when the pump light is perpendicularly incident;
FIG. 5 is a schematic structural view of an optoelectronic device provided by the present invention;
FIG. 6 is a schematic flow chart of a method for manufacturing an on-chip all-optical switch provided by the invention;
fig. 7 is a schematic structural diagram of a device for manufacturing an on-chip all-optical switch according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The on-chip all-optical switch, the method of manufacturing the on-chip all-optical switch, and the optoelectronic device of the present invention are described below with reference to fig. 1-6.
Fig. 1 is a schematic diagram of a first embodiment of an on-chip all-optical switch provided by the present invention, and fig. 2 is a second embodiment of a schematic diagram of an on-chip all-optical switch provided by the present invention, where, as shown in fig. 1 and fig. 2, the on-chip all-optical switch includes: the substrate 101, the insulating layer 102, the two-dimensional topological insulator layer 103, the isolation layer 104 and the micro-nano array layer 105, wherein the insulating layer 102 is arranged on the upper surface of the substrate 101, the two-dimensional topological insulator layer 103 is arranged on the upper surface of the insulating layer 102, the isolation layer 104 is arranged on the upper surface of the two-dimensional topological insulator layer 103, and the micro-nano array layer 105 is arranged on the upper surface of the isolation layer 104;
wherein the substrate 101 is used for supporting the insulating layer 102; the insulating layer 102 is used to isolate the substrate 101 from the two-dimensional topological insulator layer 103; the isolation layer 104 is used for isolating the two-dimensional topological insulator layer 103 and the micro-nano array layer 105; the micro-nano array layer 105 is configured to generate an optical saturation absorption effect with the two-dimensional topological insulator layer 103 under the excitation of pump light with different polarization directions and/or different wavelengths, where the optical saturation absorption effect is used to indicate that the probe light passes through or does not pass through the two-dimensional topological insulator layer 103; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light.
Specifically, the insulating layer 102 is disposed on the upper surface of the substrate 101, the two-dimensional topological insulator layer 103 is disposed on the upper surface of the insulating layer 102, the substrate 101 is used for supporting the insulating layer 102, and the insulating layer 102 is used for isolating the substrate 101 and the two-dimensional topological insulator layer 103.
In order to avoid charge transfer between the two-dimensional topological insulator layer 103 and the micro-nano array layer 105, an isolation layer 104 is arranged between the two-dimensional topological insulator layer 103 and the micro-nano array layer 105, the isolation layer 104 is arranged on the upper surface of the two-dimensional topological insulator layer 103, and the isolation layer 104 is used for isolating the two-dimensional topological insulator layer 103 and the micro-nano array layer 105.
The surface of the micro-nano array layer 105 has nonlinear plasmons. The micro-nano array layer 105 and the two-dimensional topological insulator layer 103 form a hybrid structure, and as the surface of the micro-nano array layer 105 is provided with nonlinear plasmons, the concentration of incident light in an optical near-field region can be increased, the nonlinear absorption effect of the two-dimensional topological insulator layer 103 can be enhanced, and the photoswitch characteristic of the hybrid structure is greatly improved.
In designing an on-chip all-optical switch, the resonant peak of the photon mode of the two-dimensional topological insulator layer 103 is made equal to the wavelength of the surface plasmon of the micro-nano array layer 105 by adjusting the geometric parameters of the two-dimensional topological insulator layer 103 and the micro-nano array layer 105 (for example, adjusting the thickness or material of the two-dimensional topological insulator layer 103 and the size or material of the micro-nano array layer 105).
A coupling effect can be formed between the photon mode of the two-dimensional topological insulator layer 103 and the surface plasmons of the micro-nano array layer 105, and the micro-nano array layer 105 and the two-dimensional topological insulator layer 103 generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effects are used for indicating that the probe light passes through or does not pass through the two-dimensional topological insulator layer. The optical saturation absorption effect includes an enhanced saturation absorption effect formed based on a high-concentration electric field induced by plasmon resonance of a local surface of the micro-nano array layer 105 and a suppressed saturation absorption effect formed based on two-photon absorption. Furthermore, the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer 103, so that the intensity of the saturation absorption changes at a specific wavelength of probe light.
In practice, the pump light with different polarization and/or different wavelength is vertically incident to the micro-nano array layer 105, and then is incident to the two-dimensional topological insulator layer 103 through the micro-nano array layer 105, and the micro-nano array layer 105 and the two-dimensional topological insulator layer 103 generate optical saturation absorption effect under the excitation of the pump light with different polarization directions and/or different wavelengths. By changing the polarization direction and/or wavelength of the pump light incident to the two-dimensional topological insulator layer 103 and the micro-nano array layer 105, the transmittance intensity of the probe light incident to the two-dimensional topological insulator layer 103 and the micro-nano array layer 105 can be modulated, so that the on-chip all-optical switch has a light-induced on mode and a light-induced off mode, thereby reducing the power consumption of the on-chip all-optical switch and improving the response speed.
The on-chip all-optical switch provided by the invention comprises: the device comprises a substrate, an insulating layer, a two-dimensional topological insulator layer, an isolation layer and a micro-nano array layer, wherein the insulating layer is arranged on the upper surface of the substrate, the two-dimensional topological insulator layer is arranged on the upper surface of the insulating layer, the isolation layer is arranged on the upper surface of the two-dimensional topological insulator layer, and the micro-nano array layer is arranged on the upper surface of the isolation layer; wherein the substrate is used for supporting the insulating layer; the insulating layer is used for isolating the substrate and the two-dimensional topological insulator layer; the isolation layer is used for isolating the two-dimensional topological insulator layer and the micro-nano array layer; the micro-nano array layer is used for generating an optical saturation absorption effect with the two-dimensional topological insulator layer under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effect is used for indicating that the detection light passes through or does not pass through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light. By changing the polarization direction and/or wavelength of the pump light incident to the two-dimensional topological insulator layer and the micro-nano array layer, the two-dimensional topological insulator layer and the micro-nano array layer generate optical saturation absorption effect under the excitation of pump light with different polarization directions and/or different wavelengths, and the polarization sensitivity characteristic of the optical saturation absorption effect depends on the isotropy characteristic of the two-dimensional topological insulator layer, so that the saturation absorption intensity under the detection light with specific wavelength is changed. By changing the polarization direction or wavelength of the pumping light, the transmittance intensity of the detection light can be modulated, so that the on-chip all-optical switch has light-induced on and off modes, the power consumption of the on-chip all-optical switch is reduced, the response speed of the on-chip all-optical switch is improved, and the on-chip all-optical switch can be applied to next-generation all-optical signal switches and computing devices.
Optionally, the two-dimensional topological insulator layer 103 comprises at least one layer of topological insulator; the two-dimensional topological insulator layer comprises at least one of the following: a band gap less than a first predetermined threshold, a metallic surface state, broadband absorption, carrier mobility greater than a second predetermined threshold.
Specifically, the two-dimensional topological insulator layer 103 may include at least one layer of topological insulator, for example, the number of layers of the topological insulator is 10, and it is noted that the number of layers of the topological insulator is at most 10. The two-dimensional topological insulator layer 103 comprises at least one of the following: the two-dimensional topological insulator layer 103 has a band gap smaller than a first preset threshold, a metal surface state, a broadband absorption, and a carrier mobility larger than a second preset threshold, i.e., the two-dimensional topological insulator layer 103 has not only the band gap smaller than the first preset threshold and the metal surface state, but also the broadband absorption and the carrier mobility larger than the second preset threshold.
It should be noted that the two-dimensional topological insulator is a new quantum state. Materials in the traditional sense can be classified into insulators and conductors according to their electronic structure, but topological insulators are a very specific type of insulator. For the interior of the topological insulator, the band structure of the electrons of the topological insulator is similar to that of a conventional insulator, with the fermi level between the valence and conduction bands. The surface of the topological insulator has a dirac surface state capable of crossing the energy gap, and the surface can be characterized as metallic, and is called a metallic surface state. Unlike the metallic properties caused by surface reconstruction or the presence of unsaturated bonds on the surface, the particular quantum states of the topological insulator are determined by the particular topological properties of the energy band structure, so that the topological insulator is protected by time-reversal symmetry. The topological insulator can be almost free from disordered scattering and non-magnetic impurities and is therefore very stable. Since the surface states of the topological insulator need to be described by using dirac equations, the basic properties of the topological insulator can be determined by the combined effect of relativistic effects and quantum mechanics. By utilizing the unique properties of narrower band gap, metal surface state, broadband absorption, high carrier mobility and the like of the topological insulator, the topological insulator can have wide application prospect in the fields of light-operated devices, saturable absorption, low-power-consumption devices and the like.
A two-dimensional topological insulator is a quantum phase composed of an insulator with a narrower band gap and a relatively simple surface electronic structure. Due to the existence of the dirac surface state, the two-dimensional topological insulator also has broadband absorption and high carrier mobility, so that the two-dimensional topological insulator can be widely applied to all-optical modulation devices.However, pure two-dimensional topological insulators may not provide high modulation depth, e.g., 4-layer Bi 2 Se 3 The modulation depth of the film was only 8.6%. However, due to the high resistance of the two-dimensional topological insulator to the surrounding environment, when the two-dimensional topological insulator layer 103 forms a coupling system of a plasmon structure with the micro-nano array layer 105, the dirac surface state at the heterogeneous interface can be maintained, and the dirac surface state has deeper modulation depth and new polarization characteristics.
Optionally, the micro-nano array layer 105 is a two-dimensional periodically arranged grating structure or a photonic crystal structure, and the grating structure includes any one of the following: cuboid-shaped grating structure, cube-shaped grating structure, cylindrical grating structure, polyhedral-shaped grating structure.
Specifically, fig. 3 is a schematic structural diagram of the micro-nano array layer provided by the present invention, as shown in fig. 3, the micro-nano array layer 105 may be a two-dimensional periodically arranged grating structure or a photonic crystal structure, where the grating structure includes any one of the following: cuboid-shaped grating structure, cube-shaped grating structure, cylindrical grating structure, polyhedral-shaped grating structure. For example, the micro-nano array layer 105 has a rectangular structure Jin Guangshan with two-dimensional periodic arrangement, and in the actual manufacturing process, different materials and different two-dimensional periodic parameters (P x ,P y ) The micro-nano array layer 105 is formed, and the two-dimensional periodic parameter represents the arrangement rule of the micro-nano array layer 105.
FIG. 4 is a schematic diagram of the transmission spectrum of the pump light in the case of vertical incidence, as shown in FIG. 4, the pump light is vertically incident to a two-dimensional periodically arranged rectangular gold grating structure (micro-nano array layer 105) and 4 Bi layers 2 Se 3 Hybrid structure formed by topological insulator thin film (two-dimensional topological insulator layer 103), due to Bi 2 Se 3 The Au hybrid structure exhibits good saturated absorption polarization characteristics at 800nm, with continuous light (CW) of 450nm and 1064nm as probe light, and with femtosecond laser of 800nm as pump light. The transmission spectrum depicting the "on" and "off" characteristics of an on-chip all-optical switch is shown in FIG. 4, in whichThe abscissa represents time, and the ordinate represents normalized transmittance.
When the on-chip all-optical switch rotates 90 °, the x polarization of the pump light and the probe light is changed to y polarization, and if the pump light is turned off, the transmittance of the 1064nm CW probe light changes with the rotation of the on-chip all-optical switch, while the transmittance of the 450nm CW probe light remains unchanged, because after the on-chip all-optical switch rotates, the transmittance of the Bi 2 Se 3 The linear transmission spectrum in the Au hybrid structure varies with the excitation wavelength (wavelength of the pump light) only above 730 nm. It can be seen that the transmittance of the orthogonal polarization at 1064nm is different, and the change in the degree of polarization is about 12.4%. At irradiance of 800nm femtosecond (fs) pump light, the transmittance of x-polarization of the pump light and probe light is lower than that of y-polarization due to polarization-sensitive saturated absorption effect, and thus, modulation depths of 3.5% and 22% are achieved by the x-polarization and y-polarization, and the improvement is large compared to modulation depths of 0% and 12.4%.
Optionally, the material of the micro-nano array layer 105 is one metal material, an alloy material of a plurality of metal materials, or a semiconductor material.
Specifically, the material of the micro-nano array layer 105 is one metal material, an alloy material of a plurality of metal materials, or a semiconductor material, for example, the metal material is gold, silver, copper or aluminum, the alloy material is composed of at least two of gold, silver, copper and aluminum, and the semiconductor material is silicon, silicon nitride, lithium niobate or indium phosphide.
Optionally, the material of the substrate 101 is silicon, the material of the isolation layer 104 is titanium or chromium, and the material of the insulating layer 102 is alumina or polymethyl methacrylate.
Specifically, since a metal film or a semiconductor film is deposited on the insulating layer 102, the substrate 101 serves to support the insulating layer, i.e., the substrate 101 can support the metal film or the semiconductor film on the insulating layer 102 and improve the characteristics of the metal film or the semiconductor film. The metal film or the semiconductor film grows on the substrate, the material property of the substrate and the shape of the surface of the substrate have great influence on the characteristics of the metal film or the semiconductor film, because the film generally has a thickness dimension between nanometers and micrometers and the surface of the substrate is required to have ultrahigh flatness; the bonding of the film and the substrate is also a very important aspect, and if the lattices of the two are not matched, a longer transition region is formed in the early stages of film formation. In order to be able to match the material of the substrate 101 with the thin film, the material of the substrate 101 is silicon, and the material of the insulating layer 102 is aluminum oxide or polymethyl methacrylate.
The material of the isolation layer 104 is titanium or chromium, and the thickness interval of the isolation layer 104 is 5 nm-30 nm.
Based on any of the above embodiments, the present invention further provides an optoelectronic device, and the structure of the optoelectronic device will be described below with reference to fig. 5.
Fig. 5 is a schematic structural diagram of an optoelectronic device provided by the present invention, and as shown in fig. 5, an optoelectronic device 500 may include an on-chip all-optical switch 5001. Because the optoelectronic device 500 includes the on-chip all-optical switch 5001, the on-chip all-optical switch 5001 is a hybrid structure integrated with the micro-nano array by using a two-dimensional topological insulator, the on-chip all-optical switch 5001 can generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, so that the on-chip all-optical switch 5001 can have light-induced on and off modes, the power consumption of the on-chip all-optical switch is reduced, and the response speed of the on-chip all-optical switch is improved. Therefore, the optoelectronic device 500 comprising the on-chip all-optical switch 5001 can greatly improve the modulation depth, the modulation efficiency and the response speed of the optoelectronic device at room temperature and can regulate and control the working wavelength, and realize stronger coupling action between the two-dimensional topological insulator and the micro-nano array, thereby regulating and controlling the nonlinear saturated absorption effect. The method has great significance for the realization, integration and multifunction promotion of the on-chip all-optical switch with excellent performance, and has great significance for the development of on-chip optical interconnection, next-generation supercomputers and cloud networks.
According to the photoelectronic device provided by the invention, the coupling action intensity between the micro-nano array and the two-dimensional topological insulator is enhanced by designing the mixed structure of the micro-nano array and the two-dimensional topological insulator, so that the nonlinear saturation absorption effect is greatly enhanced, the performance of the on-chip all-optical switch is improved, the photoelectronic device realizes the great improvement of the modulation depth, the modulation efficiency and the response speed of the photoelectronic device at room temperature and the adjustability of the working wavelength by utilizing the two-dimensional topological insulator and the micro-nano array, the nonlinear optical absorption effect is enhanced, the quick response speed and the low power consumption of the photoelectronic device are improved, the adjustability of the working wavelength can be realized, and the photoelectronic device has great significance for the development of on-chip optical interconnection, next-generation supercomputers and cloud networks.
Based on any one of the above embodiments, the present invention further provides a method for manufacturing an on-chip all-optical switch, and a method for manufacturing an on-chip all-optical switch is described below.
Fig. 6 is a schematic flow chart of a method for manufacturing an on-chip all-optical switch according to the present invention, as shown in fig. 6, the method includes steps 601 to 602, wherein:
in step 601, an insulating layer, a two-dimensional topological insulator layer, an isolation layer and a micro-nano array layer are prepared in advance.
It should be noted that the preparation method of the on-chip all-optical switch provided by the invention is applied to the preparation scene of the on-chip all-optical switch. The execution subject of the method may be an on-chip all-optical switch preparation apparatus, for example, an electronic device, or a control module in the on-chip all-optical switch preparation apparatus for executing the on-chip all-optical switch preparation method.
Specifically, the thicknesses of the insulating layer, the isolation layer, and the micro-nano array layer may be set according to actual conditions. For example, the thickness of the insulating layer may be 500nm to 1000nm, the thickness of the isolation layer may be 5nm to 30nm, and the thickness of the micro-nano array layer may be 50nm to 200nm.
Step 602, sequentially transferring the insulating layer to a substrate, transferring the two-dimensional topological insulator layer to the insulating layer, transferring the isolating layer to the two-dimensional topological insulator layer, and transferring the micro-nano array layer to the isolating layer to obtain an on-chip all-optical switch; the micro-nano array layer and the two-dimensional topological insulator layer generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effects are used for indicating that detection light is transmitted or not transmitted through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light.
Specifically, after an insulating layer, a two-dimensional topological insulator layer, an isolation layer and a micro-nano array layer are prepared in advance, transferring the insulating layer onto a substrate to prepare the insulating layer on the upper surface of the substrate; and transferring the two-dimensional topological insulator layer onto the insulating layer, transferring the isolating layer onto the two-dimensional topological insulator layer, and transferring the micro-nano array layer onto the isolating layer to finally obtain the on-chip all-optical switch. The photon mode of the two-dimensional topological insulator layer and the surface plasmon of the micro-nano array layer can form a coupling effect, and the micro-nano array layer and the two-dimensional topological insulator layer generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effects are used for indicating that the probe light is transmitted or not transmitted through the two-dimensional topological insulator layer. The optical saturation absorption effect includes an enhanced saturation absorption effect formed based on a high-concentration electric field induced by plasmon resonance of a local surface of the micro-nano array layer and a suppressed saturation absorption effect formed based on two-photon absorption. Furthermore, the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer, so that the intensity of the saturation absorption changes at a specific wavelength of the probe light. By changing the polarization direction and/or wavelength of the pumping light incident to the two-dimensional topological insulator layer and the micro-nano array layer, the transmittance intensity of the detection light incident to the two-dimensional topological insulator layer and the micro-nano array layer can be modulated, so that the on-chip all-optical switch has light-induced on and off modes, thereby reducing the power consumption of the on-chip all-optical switch and improving the response speed.
It should be noted that, the two-dimensional topological insulator layer and the micro-nano array layer are vertically stacked in a certain order to form a hybrid structure, so that an on-chip all-optical switch with excellent performance can be obtained. The micro-nano array and the two-dimensional topological insulator are designed by utilizing high-precision numerical simulation, and then the characteristics of modulation depth, modulation efficiency, working wavelength, response speed and the like of the on-chip all-optical switch based on the hybrid structure at room temperature are measured and researched by using a micro-nano processing technology, an optical integration technology and a spectrum detection technology.
According to the preparation method of the on-chip all-optical switch, the on-chip all-optical switch is obtained by sequentially transferring the pre-prepared insulating layer onto the substrate, transferring the two-dimensional topological insulator layer onto the insulating layer, transferring the isolating layer onto the two-dimensional topological insulator layer and transferring the micro-nano array layer onto the isolating layer, so that the integration of the micro-nano array layer and the two-dimensional topological insulator layer is realized, the modulation depth and the modulation efficiency of the on-chip all-optical switch can be improved, the power consumption of the on-chip all-optical switch can be effectively reduced, and the response speed of the on-chip all-optical switch can be improved.
Alternatively, the insulating layer may be obtained by electron beam evaporation, and a metal film or a semiconductor film is deposited on the insulating layer. For example, a metal thin film having a thickness of 100nm to 250nm is deposited on the insulating layer by electron beam evaporation, or a semiconductor thin film having a thickness of 100nm to 250nm is grown on the insulating layer.
Optionally, the two-dimensional topological insulator layer is obtained based on at least one layer of two-dimensional topological insulator grown by using a molecular beam epitaxy device or is obtained based on stacking different single-layer two-dimensional topological insulator films; the two-dimensional topological insulator layer comprises at least one of the following: a band gap less than a first predetermined threshold, a metallic surface state, broadband absorption, carrier mobility greater than a second predetermined threshold.
Specifically, a molecular beam epitaxy device is used for growing at least one layer of two-dimensional topological insulator or stacking different single-layer two-dimensional topological insulator films together, so that a two-dimensional topological insulator layer is obtained. The two-dimensional topological insulator layer comprises at least one of the following: the two-dimensional topological insulator layer not only has the band gap and the metal surface state smaller than the first preset threshold value, but also has the broadband absorption and the carrier mobility larger than the second preset threshold value.
And transferring the prepared two-dimensional topological insulator layer to the upper surface of the insulating layer, so that the two-dimensional topological insulator layer is integrated with the substrate, the insulating layer, the isolation layer and the micro-nano array layer, and the two-dimensional topological insulator layer can generate stronger coupling effect with the micro-nano array layer, thereby enhancing the modulation depth and the modulation efficiency of the on-chip all-optical switch.
In practice, the wavelength and/or polarization direction of the pump light and the probe light need to be selected appropriately according to practical situations, so as to improve the modulation depth, the modulation efficiency and the response speed under the coupling effect. When the pump light in the direction perpendicular to the surface of the on-chip all-optical switch is incident to the mixed structure formed by the micro-nano array layer and the two-dimensional topological insulator layer, the mixed structure is pumped, and the optical saturated absorption effect is generated under the excitation of the pump light, wherein the optical saturated absorption effect comprises the enhanced saturated absorption effect or the suppressed saturated absorption effect, so that the optical transmittance of the probe light is changed along with the change of orthogonal polarization, thereby realizing the on and off modes of the on-chip all-optical switch, and being applicable to next-generation all-optical signal switches and computing devices.
Optionally, the isolation layer is based on thermal evaporation.
Optionally, after the pre-prepared two-dimensional topological insulator layer is transferred to the upper surface of the insulating layer, an isolating layer with the thickness of 5nm-30nm can be formed on the two-dimensional topological insulator layer by adopting a thermal evaporation method, and the micro-nano array layer and the two-dimensional topological insulator layer can be integrated through the arrangement of the isolating layer, so that the modulation depth and the modulation efficiency of the on-chip all-optical switch can be improved, the size and the power consumption of the on-chip all-optical switch can be effectively reduced, and the manufacturing cost is saved.
Optionally, the micro-nano array layer is obtained based on electron beam lithography, electron beam deposition, electron beam etching or electron beam stripping.
For example, a two-dimensional periodic array of cells is prepared on a metal film or a semiconductor film by electron beam lithography to form a micro-nano array layer (optical array layer).
It should be noted that, after the preparation of the micro-nano array layer, an isolating layer with a thickness of 5nm-30nm may be plated on the surface of the micro-nano array layer by adopting an atomic deposition method.
The apparatus for manufacturing an on-chip all-optical switch provided by the present invention is described below, and the apparatus for manufacturing an on-chip all-optical switch described below and the method for manufacturing an on-chip all-optical switch described above may be referred to correspondingly.
Fig. 7 is a schematic structural diagram of a device for manufacturing an on-chip all-optical switch according to the present invention, and as shown in fig. 7, a device 700 for manufacturing an on-chip all-optical switch includes a manufacturing module 701 and a stacking module 702; wherein,
the preparation module 701 is used for preparing an insulating layer, a two-dimensional topological insulator layer, an isolation layer and a micro-nano array layer in advance;
a stacking module 702, configured to sequentially transfer the insulating layer onto a substrate, transfer the two-dimensional topological insulator layer onto the insulating layer, transfer the isolation layer onto the two-dimensional topological insulator layer, and transfer the micro-nano array layer onto the isolation layer, thereby obtaining an on-chip all-optical switch; the micro-nano array layer and the two-dimensional topological insulator layer generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effects are used for indicating that detection light is transmitted or not transmitted through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light.
According to the preparation device of the on-chip all-optical switch, the on-chip all-optical switch is obtained by sequentially transferring the pre-prepared insulating layer onto the substrate, transferring the two-dimensional topological insulator layer onto the insulating layer, transferring the isolating layer onto the two-dimensional topological insulator layer and transferring the micro-nano array layer onto the isolating layer, so that the integration of the micro-nano array layer and the two-dimensional topological insulator layer is realized, the modulation depth and the modulation efficiency of the on-chip all-optical switch can be improved, the power consumption of the on-chip all-optical switch can be effectively reduced, and the response speed of the on-chip all-optical switch can be improved.
Optionally, the two-dimensional topological insulator layer is obtained based on at least one layer of two-dimensional topological insulator grown by using a molecular beam epitaxy device or is obtained based on stacking different single-layer two-dimensional topological insulator films; the two-dimensional topological insulator layer comprises at least one of the following: a band gap less than a first predetermined threshold, a metallic surface state, broadband absorption, carrier mobility greater than a second predetermined threshold.
Optionally, the isolation layer is based on thermal evaporation.
Optionally, the micro-nano array layer is obtained based on electron beam lithography, electron beam deposition, electron beam etching or electron beam stripping.
The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on this understanding, the foregoing technical solution may be embodied essentially or in a part contributing to the prior art in the form of a software product, which may be stored in a computer readable storage medium, such as ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method described in the respective embodiments or some parts of the embodiments.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. An on-chip all-optical switch, comprising: the device comprises a substrate, an insulating layer, a two-dimensional topological insulator layer, an isolation layer and a micro-nano array layer, wherein the insulating layer is arranged on the upper surface of the substrate, the two-dimensional topological insulator layer is arranged on the upper surface of the insulating layer, the isolation layer is arranged on the upper surface of the two-dimensional topological insulator layer, and the micro-nano array layer is arranged on the upper surface of the isolation layer; wherein,
the substrate is used for supporting the insulating layer;
the insulating layer is used for isolating the substrate and the two-dimensional topological insulator layer;
the isolation layer is used for isolating the two-dimensional topological insulator layer and the micro-nano array layer;
The micro-nano array layer is used for generating an optical saturation absorption effect with the two-dimensional topological insulator layer under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effect is used for indicating that the detection light passes through or does not pass through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light.
2. The on-chip all-optical switch of claim 1, wherein the two-dimensional topological insulator layer comprises at least one layer of topological insulator; the two-dimensional topological insulator layer comprises at least one of the following: a band gap less than a first predetermined threshold, a metallic surface state, broadband absorption, carrier mobility greater than a second predetermined threshold.
3. The on-chip all-optical switch according to claim 1 or 2, wherein the micro-nano array layer is a two-dimensional periodically arranged grating structure or photonic crystal structure, and the grating structure comprises any one of the following: cuboid-shaped grating structure, cube-shaped grating structure, cylindrical grating structure, polyhedral-shaped grating structure.
4. The on-chip all-optical switch according to claim 1 or 2, wherein the material of the micro-nano array layer is a metal material, an alloy material of a plurality of metal materials, or a semiconductor material.
5. An on-chip all-optical switch according to claim 1 or 2, wherein the substrate is silicon, the isolating layer is titanium or chromium, and the insulating layer is aluminum oxide or polymethyl methacrylate.
6. A method for manufacturing an on-chip all-optical switch, which is applied to the on-chip all-optical switch according to any one of claims 1 to 5, comprising:
preparing an insulating layer, a two-dimensional topological insulator layer, an isolating layer and a micro-nano array layer in advance;
sequentially transferring the insulating layer to a substrate, transferring the two-dimensional topological insulator layer to the insulating layer, transferring the isolating layer to the two-dimensional topological insulator layer, and transferring the micro-nano array layer to the isolating layer to obtain an on-chip all-optical switch; the micro-nano array layer and the two-dimensional topological insulator layer generate optical saturation absorption effects under the excitation of pump light with different polarization directions and/or different wavelengths, and the optical saturation absorption effects are used for indicating that detection light is transmitted or not transmitted through the two-dimensional topological insulator layer; the optical saturated absorption effect includes an enhanced saturated absorption effect formed based on a plasmon resonance-induced high concentration electric field of a local surface of the micro-nano array layer and a suppressed saturated absorption effect formed based on two-photon absorption; the polarization-sensitive properties of the optical saturation absorption effect depend on the isotropic properties of the two-dimensional topological insulator layer such that the intensity of the saturation absorption effect varies under a specific wavelength of probe light.
7. The method of manufacturing an on-chip all-optical switch according to claim 6, wherein the two-dimensional topological insulator layer is obtained based on at least one layer of two-dimensional topological insulator grown by using a molecular beam epitaxy device or on stacking different single-layer two-dimensional topological insulator films; the two-dimensional topological insulator layer comprises at least one of the following: a band gap less than a first predetermined threshold, a metallic surface state, broadband absorption, carrier mobility greater than a second predetermined threshold.
8. The method of manufacturing an on-chip all-optical switch according to claim 6, wherein the isolation layer is obtained based on a thermal evaporation method.
9. The method for manufacturing an on-chip all-optical switch according to claim 6, wherein the micro-nano array layer is obtained based on electron beam lithography, electron beam deposition, electron beam etching or electron beam lift-off.
10. An optoelectronic device, comprising: an on-chip all-optical switch based on any one of claims 1 to 5.
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