CN117488262A - Ar膜、元件及设备 - Google Patents
Ar膜、元件及设备 Download PDFInfo
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- 239000010410 layer Substances 0.000 claims abstract description 187
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000011247 coating layer Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- 229910000484 niobium oxide Inorganic materials 0.000 claims abstract description 14
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000037452 priming Effects 0.000 claims abstract description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims description 37
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 5
- 238000000465 moulding Methods 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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- Optics & Photonics (AREA)
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Abstract
本发明公开了AR膜、元件及设备,其中AR膜,包括顺次设置的基材层、打底层、最外层为镀二氧化硅层的复合层、镀氧化铌层,其中,所述复合层为增透的镀氧化钛层与降反的镀二氧化硅层的组合,镀氧化铌层作为放电性调控层其厚度满足:0.1‑10nm。本发明通过优化产品的结构设计,至少在顶层优化型地加镀一层氧化铌,能在作业过程中有效地遮盖住原先因顶层氧化硅放电中产生的波动,从而避免因波动导致镀层形貌厚度等发生变化,从而整体上改善产品的质量和性能,使得产品成型具有更好的性能稳定性。
Description
技术领域
本发明是关于电子技术,特别是关于一种AR膜、元件及设备。
背景技术
现有AR膜专利或多或少存在镀层均匀性偏差的问题,均匀性偏差,会直间影响表面颜色,对产品的良率有不利影响。
公开于该背景技术部分的信息仅仅旨在增加对本发明的总体背景的理解,而不应当被视为承认或以任何形式暗示该信息构成已为本领域一般技术人员所公知的现有技术。
发明内容
本发明的目的在于提供一种AR膜、元件及设备,通过优化产品的结构设计,至少在顶层优化型地加镀一层氧化铌,能在作业过程中有效地遮盖住原先因顶层氧化硅放电中产生的波动,从而避免因波动导致镀层形貌厚度等发生变化,从而整体上改善产品的质量和性能,使得产品成型具有更好的性能稳定性。
为实现上述目的,本发明的实施例提供了AR膜,包括顺次设置的基材层、打底层、最外层为镀二氧化硅层的复合层、镀氧化铌层,其中,复合层为增透的镀氧化钛层与降反的镀二氧化硅层的组合,镀氧化铌层作为放电性调控层其厚度满足:0.1-10nm。
在本发明的一个或多个实施方式中,基材层选自PET层、PI层、TAC、COP层、PC层。优选的,基材层厚度为5.7-250μm。
在本发明的一个或多个实施方式中,基材层至少一个侧面还由主要原料为丙烯酸树脂的涂布液形成有涂布层,其中:远离打底层的涂布层为第一涂布层;和/或与打底层相邻的涂布层为第二涂布层。
在本发明的一个或多个实施方式中,第二涂布层厚度为40-320nm。
在本发明的一个或多个实施方式中,第一涂布层厚度为0.3-3.9μm。
在本发明的一个或多个实施方式中,打底层选自SiO2层、Ti层、Si层、Al2O3层、MgF2层、SiO层、HfO2层、SnO2层、Y2O3层。
在本发明的一个或多个实施方式中,复合层包括第一镀层、第一镀二氧化硅层、第二镀层、第二镀二氧化硅层;且满足第一镀层的厚度5-200nm和/或第一镀二氧化硅层的厚度10-260nm和/或第二镀层的厚度5-280nm和/或第二镀二氧化硅层的厚度50-310nm,第一镀层和/或第二镀层为镀氧化钛层或镀氧化铌层。
在本发明的一个或多个实施方式中,AR膜的最外层还形成有高温保护层,其选自PET层。
在本发明的一个或多个实施方式中,电子元件,包括主体以及形成于主体上的如前述的AR膜。
在本发明的一个或多个实施方式中,电子设备,包括机体以及设置于机体的如前述的电子元件。
与现有技术相比,根据本发明实施方式的AR膜、元件及设备,通过优化产品的结构设计,至少在顶层优化型地加镀一层氧化铌,就能遮盖住原先因顶层氧化硅放电中产生的波动(主要因为氧化硅镀层较厚,如果镀层薄,溅射功率低,也能大致控制溅射稳定性)对镀层产生的直观影响。此时虽然会在一定程度上需要在工艺过程中增加一副靶材,可能会稍微影响溅射效率,不过因为需要加镀的镀层较薄,效率影响并不算大,却能很好的优化产品的质量。
附图说明
图1是根据本发明一实施方式的结构示意图;
图2是根据本发明实施方式的反射曲线图。
其中标记为:1、离型膜;2、第一涂布层;3、基材层;4、第二涂布层;5、打底层;6、第一镀层;7、镀SiO2层;8、第二镀层;9、镀SiO2层;10、镀Nb2O5层;11、正保层。
具体实施方式
下面对本发明的具体实施方式进行详细描述,但应当理解本发明的保护范围并不受具体实施方式的限制。
除非另有其它明确表示,否则在整个说明书和权利要求书中,术语“包括”或其变换如“包含”或“包括有”等等将被理解为包括所陈述的元件或组成部分,而并未排除其它元件或其它组成部分。
本发明AR膜的实现基本可以包括基材层(作为2防膜其基材可以是PET层、透明PI层;作为3防膜其基材可以是TAC层、COP层或者PC层),基材层厚度5.7-250μm。AR膜在基材材质不同时,其应用范围可以有所差别)。基材层的双面通过涂布工艺分别设有上底涂层和下底涂层,上底涂层和下底涂层上通过涂布工艺涂布丙烯酸树脂涂布液得到,上层涂布厚度40-320nm,下层涂布厚度0.3-3.9μm。涂布后在下底涂层可以贴合30-188μm高温保护膜,以保证磁控溅射镀膜过程中膜面外观保护及镀膜稳定性。在上底涂层上通过磁控溅射工艺镀设有增加底层附着力的打底层,打底层的靶材可以为SiO2、Ti、Si、Al2O3、MgF2、SiO、HfO2、SnO2、Y2O3,很大程度提高了膜面物理性能,对模拟环境耐候性测试时间有质的改善。在打底层上镀有增加透过的氧化钛层(TiO2,5-200nm),在氧化钛层上镀设有降低反射的二氧化硅层(SiO2,10-260nm),在二氧化硅层上镀设有增加透过的氧化钛层(5-280nm),氧化钛层上镀设有降低反射的二氧化硅层(50-310nm),由于顶层为溅射镀SiO2,需要用氧气控制电压,存在稳定性差异问题,会导致均匀性略有波动,因为在顶层,会更明显的表现出整体镀层均匀性,故在上述二氧化硅(SiO2)层上镀设有一层氧化铌(Nb2O5)层(0.1-10nm),氧化铌无需用氧气控制电压,溅射较稳定,覆盖一层氧化铌能有效的降低氧化硅对镀层均匀性的影响,以上磁控镀膜溅射提供轰击靶材的气体为氩气,靶材反应气体为混合气体,反应气体选为混合气体有效解决硅靶膜面均匀性,整体提高了叠加后光学稳定性,整体镀层叠加后反射性能在380-780nm波段的均匀性能达到5%之内,对于TD方向颜色差别基本很小,对于成材率及产品稳定性帮助很大,以上镀层结构可以根据客户需求更改。
以上方案中,在磁控镀膜结束可以进一步地在表面涂有一层抗油污抗指纹抗划伤的AF层(2-190nm),AF涂布后测试整体光学,全光透过能达到96%以上,分光透过400-700nm波段能达到94%以上,反射400-700nm波段均值能达到0.5%以下。
如图1中a-c所示的为AR膜几种实施方式的膜层结构示意图。
对比例1(原先结构1)
本对比例的AR膜由5.7μmPET基材向外顺次形成有Si打底层、Nb2O5层、SiO2层、Nb2O5层、SiO2层,各层厚度分别为:10、10、30、100、80nm。
对比例2(原先结构2)
本对比例的AR膜由250μmPET基材向外顺次形成有Si打底层、TiO2层、SiO2层、TiO2层、SiO2层,各层厚度分别为:10、15、40、120、90nm。
11、正保层;10、镀Nb2O5层;9、镀SiO2层;8、第二镀层;7、镀SiO2层;6、第一镀层;5、打底层;4、第二涂布层;3、基材层;2、第一涂布层;1、离型膜。
实施例1(新结构1)
本实施例的AR膜由5.7μmPET基材向外顺次形成有Si打底层、TiO2层、SiO2层、TiO2层、SiO2层、Nb2O5层,各层厚度分别为:10、10、30、100、80、0.1nm。
实施例2(新结构2)
本实施例的AR膜由250μmPET基材向外顺次形成有Si打底层、TiO2层、SiO2层、TiO2层、SiO2层、Nb2O5层,各层厚度分别为:10、15、40、120、90、10nm。
实施例3
本实施例的AR膜由5.7μmPET基材向外顺次形成有Si打底层、Nb2O5层、SiO2层、Nb2O5层、SiO2层、Nb2O5层,各层厚度分别为:10、10、30、100、80、0.1nm。
实施例4
本实施例的AR膜由250μmPET基材向外顺次形成有Si打底层、Nb2O5层、SiO2层、Nb2O5层、SiO2层、Nb2O5层,各层厚度分别为:10、15、40、120、90、10nm。
实施例5
本实施例的AR膜由5.7μmPET基材(基材在打底层一侧形成有40nm厚的丙烯酸树脂涂布层,另一侧形成有0.3μm厚的丙烯酸树脂涂布层)向外顺次形成有Y2O3打底层、TiO2层、SiO2层、TiO2层、SiO2层、Nb2O5层,各层厚度分别为:10、5、10、5、50、2nm。
实施例6
本实施例的AR膜由250μmPET基材(基材在打底层一侧形成有320nm厚的丙烯酸树脂涂布层,另一侧形成有3.9μm厚的丙烯酸树脂涂布层)向外顺次形成有Y2O3打底层、TiO2层、SiO2层、TiO2层、SiO2层、Nb2O5层,各层厚度分别为:10、200、260、280、310、6nm。
均匀性对比,膜宽1300mm,取样(左、中、右)柯尼卡色差仪测试a*值、b*值均匀性,见表1。
从表1可以看出,统一测试方法,镀膜后背面贴合OCA胶,贴在黑色亚克力板,贴合后用脱泡机脱泡,脱泡后表面擦拭干净,用柯尼卡色差仪测试,以两组样品测试结果对比,新结构左、中、右均匀性整体略好与原先结构。
均匀性对比,各条形样品检测左、中、右三部分区域的奥林巴斯均匀性,在同一条件下,镀膜后背面贴合OCA胶,贴在黑色亚克力板,贴合后用脱泡机脱泡,脱泡后表面擦拭干净,用奥林巴斯反射率计测试,以两组样品测试结果对比,从图2-1至2-4可以看出,本方案的均匀性整体好与现有技术。
如图1中c所示的,在顶层的Nb2O5层10,上还可以形成一层正保层11以对薄膜整体形成高温、划伤、磨损等方面的保护,具体可以视产品应用需求而定,这里就不一一距离。
前述对本发明的具体示例性实施方案的描述是为了说明和例证的目的。这些描述并非想将本发明限定为所公开的精确形式,并且很显然,根据上述教导,可以进行很多改变和变化。对示例性实施例进行选择和描述的目的在于解释本发明的特定原理及其实际应用,从而使得本领域的技术人员能够实现并利用本发明的各种不同的示例性实施方案以及各种不同的选择和改变。本发明的范围意在由权利要求书及其等同形式所限定。
Claims (10)
1.一种AR膜,包括顺次设置的基材层、打底层、最外层为镀二氧化硅层的复合层、镀氧化铌层,其中,所述复合层为增透的镀氧化钛层与降反的镀二氧化硅层的组合,镀氧化铌层作为放电性调控层其厚度满足:0.1-10nm。
2.如权利要求1所述的AR膜,其特征在于,所述基材层选自PET层、PI层、TAC、COP层、PC层。
3.如权利要求2所述的AR膜,其特征在于,所述基材层至少一个侧面还由主要原料为丙烯酸树脂的涂布液形成有涂布层,其中:
远离打底层的涂布层为第一涂布层;和/或
与打底层相邻的涂布层为第二涂布层。
4.如权利要求3所述的AR膜,其特征在于,所述第二涂布层厚度为40-320nm。
5.如权利要求3所述的AR膜,其特征在于,所述第一涂布层厚度为0.3-3.9μm。
6.如权利要求1所述的AR膜,其特征在于,所述打底层选自SiO2层、Ti层、Si层、Al2O3层、MgF2层、SiO层、HfO2层、SnO2层、Y2O3层。
7.如权利要求1所述的AR膜,其特征在于,所述复合层包括第一镀层、第一镀二氧化硅层、第二镀层、第二镀二氧化硅层;且满足第一镀层的厚度5-200nm和/或第一镀二氧化硅层的厚度10-260nm和/或第二镀层的厚度5-280nm和/或第二镀二氧化硅层的厚度50-310nm,第一镀层和/或第二镀层为镀氧化钛层或镀氧化铌层。
8.如权利要求1-7任一所述的AR膜,其特征在于,所述AR膜的最外层还形成有高温保护层,其选自PET层。
9.电子元件,包括主体以及形成于主体上的如权利要求1-8任一所述的AR膜。
10.电子设备,包括机体以及设置于机体的如权利要求9所述的电子元件。
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