CN117479736A

CN117479736A - Display substrate and display device

Info

Publication number: CN117479736A
Application number: CN202311436183.7A
Authority: CN
Inventors: 刘文渠; 刘腾飞; 张锋; 崔钊
Original assignee: BOE Technology Group Co Ltd; Beijing BOE Technology Development Co Ltd
Current assignee: BOE Technology Group Co Ltd; Beijing BOE Technology Development Co Ltd
Priority date: 2023-10-31
Filing date: 2023-10-31
Publication date: 2024-01-30

Abstract

The invention discloses a display substrate and a display device, wherein the display substrate comprises: the driving back plate, the light emitting device, the photoelectric sensor and the reflecting structure. The light-emitting device is positioned above the driving backboard and is electrically connected with the driving backboard; the photoelectric sensor is positioned between the light emitting device and the driving backboard and is electrically connected with the driving backboard; the reflective structure is located between the light emitting device and the photosensor. The reflecting structure is used for reflecting the incident light rays with the incident angle larger than the first set angle. The signal to noise ratio in the fingerprint identification process is improved, and the identification precision is improved.

Description

Display substrate and display device

Technical Field

The present invention relates to the field of display technologies, and in particular, to a display substrate and a display device.

Background

The fingerprint identification technology currently applied to display products mainly comprises the following steps: capacitive, optical, and ultrasonic.

In the prior art, an organic light emitting diode (Organic Lihgt Emitting Diode, abbreviated as OLED) display product adopting an optical fingerprint identification technology mainly comprises an OLED display substrate and an optical fingerprint identification module. The optical fingerprint recognition module is generally attached to one side of the driving backboard of the OLED display substrate, which is far away from the display surface of the OLED display substrate, and the driving backboard is required to have higher optical transmittance so as to transmit light reflected by fingerprints, so that the manufacturing of high-resolution display products is not facilitated. And because the light reflected by the fingerprint needs to pass through all film layers of the driving backboard, the signal loss in the propagation process is large, and the signal to noise ratio is low.

Disclosure of Invention

The invention provides a display substrate and a display device, which are used for improving the signal-to-noise ratio in the fingerprint identification process.

In a first aspect of the present invention, there is provided a display substrate comprising:

a drive back plate;

the light-emitting device is positioned above the driving backboard and is electrically connected with the driving backboard;

the photoelectric sensor is arranged between the light emitting device and the driving backboard and is electrically connected with the driving backboard;

a reflective structure between the light emitting device and the photosensor; the reflecting structure is used for reflecting the incident light rays with the incident angle larger than the first set angle.

In the display substrate provided by the invention, the reflecting structure comprises a first dielectric layer and a second dielectric layer which are sequentially stacked along the direction away from the driving backboard; the refractive index of the first dielectric layer is smaller than that of the second dielectric layer.

In the display substrate provided by the invention, the material of the first dielectric layer is an organic material; the first dielectric layer is also used to form a planar surface on the side of the photosensor facing away from the drive backplate.

In the display substrate provided by the invention, the distance between the light emitting device and the photoelectric sensor is satisfied, so that the incident angle of the light emitted from the light emitting device to the direction of the photoelectric sensor is larger than the first set angle when the light enters the reflecting structure.

The display substrate provided by the invention further comprises: the touch electrode is positioned at one side of the light-emitting device, which is away from the driving backboard; the distance between the touch electrode and the light-emitting device is satisfied, so that the incident angle when the light emitted by the light-emitting device is incident to the reflecting structure is larger than the first set angle after the light is reflected to the direction of the photoelectric sensor through the touch electrode.

The display substrate provided by the invention further comprises: the light limiting structure is positioned between the light emitting device and the touch electrode; the light confinement structure is configured to confine light incident on the light confinement structure at a greater than a second set angle to propagate within the light confinement structure.

In the display substrate provided by the invention, the light limiting structure comprises a third dielectric layer, a fourth dielectric layer and a fifth dielectric layer which are sequentially laminated along the direction far away from the substrate; the refractive index of the fourth dielectric layer is larger than that of the third dielectric layer and larger than that of the fifth dielectric layer.

The display substrate provided by the invention further comprises: the packaging protection layer is positioned between the light-emitting device and the touch electrode; the packaging protection layer comprises at least one film layer; at least one of the third dielectric layer, the fourth dielectric layer and the fifth dielectric layer is multiplexed into at least one film layer in the packaging protective layer.

The display substrate provided by the invention further comprises: the pixel definition layer is positioned at one side of the reflecting structure, which is away from the driving backboard; the pixel definition layer comprises a pixel definition layer body and a support column positioned on one side of the pixel definition layer body away from the reflecting structure; the support column comprises a top surface parallel to the pixel definition layer body and an inclined surface positioned between the top surface and the pixel definition layer body and used for connecting the top surface and the pixel definition layer body; the distance between the support column and the photoelectric sensor is satisfied, so that the incident angle when the light emitted by the light emitting device is incident to the reflecting structure is larger than the first set angle after the light is reflected to the direction of the photoelectric sensor through the inclined plane of the support column.

In a second aspect of the present invention, there is provided a display device comprising the display substrate of any one of the above.

The invention has the following beneficial effects:

the invention provides a display substrate and a display device, wherein the display substrate comprises: the driving back plate, the light emitting device, the photoelectric sensor and the reflecting structure. The light-emitting device is positioned above the driving backboard and is electrically connected with the driving backboard; the photoelectric sensor is positioned between the light emitting device and the driving backboard and is electrically connected with the driving backboard; the reflective structure is located between the light emitting device and the photosensor. The reflecting structure is used for reflecting the incident light rays with the incident angle larger than the first set angle. The photoelectric sensor is integrated between the driving backboard and the light-emitting device, which is beneficial to reducing light loss, improving signal quality and improving density of pixel circuits, thereby improving resolution of the display substrate. Further through setting up the light reflection configuration, can reflect the part by the light emitting device direct outgoing and to the wide-angle light that the direction of photoelectric sensor was located propagates, and the wide-angle light that the direction of photoelectric sensor was located after the reflection film layer reflection in the display substrate was located after being gone out by the light emitting device, reduce the quantity of the stray light that the photoelectric sensor received in the fingerprint detection process, improve the duty cycle of the light of fingerprint reflection to improve the signal to noise ratio of detected signal, promote detection precision.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic cross-sectional structure of a display substrate according to an embodiment of the present disclosure;

FIG. 2a is a schematic diagram of a cross-sectional structure of a display substrate according to an embodiment of the invention;

FIG. 2b is a schematic diagram of a third cross-sectional structure of a display substrate according to an embodiment of the present invention;

FIG. 3 is a schematic cross-sectional view of a display substrate according to an embodiment of the present invention;

FIG. 4 is a schematic top view of a display substrate according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of a cross-sectional structure of a display substrate according to an embodiment of the present invention;

FIG. 6 is a schematic diagram illustrating a top view of a display substrate according to an embodiment of the invention;

FIG. 7 is a schematic cross-sectional view of a display substrate according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of a cross-sectional structure of a display substrate according to an embodiment of the present invention;

Fig. 9 is a third schematic top view of a display substrate according to an embodiment of the invention.

Detailed Description

In order that the above objects, features and advantages of the invention will be readily understood, a further description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus a repetitive description thereof will be omitted. The words expressing the positions and directions described in the present invention are described by taking the drawings as an example, but can be changed according to the needs, and all the changes are included in the protection scope of the present invention. The drawings of the present invention are merely schematic representations of relative positional relationships and are not intended to represent true proportions.

The fingerprint identification technology currently applied to display products mainly comprises the following steps: capacitive, optical, and ultrasonic. In the prior art, an organic light emitting diode (Organic Lihgt Emitting Diode, abbreviated as OLED) display product adopting an optical fingerprint identification technology mainly comprises an OLED display substrate and an optical fingerprint identification module. The optical fingerprint recognition module is generally attached to one side of the driving backboard of the OLED display substrate, which is far away from the display surface of the OLED display substrate, and the driving backboard is required to have higher optical transmittance so as to transmit light reflected by fingerprints, so that the manufacturing of high-resolution display products is not facilitated. And because the light reflected by the fingerprint needs to pass through all film layers of the driving backboard, the signal loss in the propagation process is large, and the signal to noise ratio is low.

In view of the above, a first aspect of the embodiments of the present invention provides a display substrate for solving the above-mentioned problems.

Fig. 1 is a schematic cross-sectional structure of a display substrate according to an embodiment of the present invention.

In the embodiment of the invention, as shown in fig. 1, a display substrate includes a driving back plate 1, a light emitting device 2, and a photosensor 3.

The driving backboard 1 is positioned at the bottom of the display substrate and is used for bearing the light emitting device 2 and the photoelectric sensor 3 which are arranged on the driving backboard. The driving back plate 1 also has a driving circuit therein, and the light emitting device 2 and the photosensor 3 are electrically connected to the driving circuit to receive a driving signal. The shape and size of the driving backplate 1 are adapted to the shape and size of the display substrate. Specifically, the shape of the driving back plate 1 may be a regular shape such as a square or a rectangle, or may be a special shape such as a circle, and is not limited herein.

In particular, as shown in fig. 1, the driving backplate 1 includes a substrate 11 and a driving circuit layer 12.

The substrate 11 may have a single-layer structure or a multi-layer structure, and is not limited herein. The substrate 11 may be a rigid substrate made of a rigid material, such as glass, etc., to make a rigid display substrate; the substrate 11 may also be a flexible substrate made of a flexible material, such as Polyimide (PI) for manufacturing a flexible display substrate, which is not limited herein.

The driving circuit layer 12 is located on the substrate 11, and the driving circuit is disposed in the driving circuit layer. The driving wiring layer includes a plurality of thin film transistors (Thin Film Tramsistor, abbreviated as TFTs). In practice, the photosensor 3 may be electrically connected to the first thin film transistor T1, and the light emitting device 2 may be electrically connected to the second thin film transistor T2. The first thin film transistor T1 is used as a switching element, and in the fingerprint identification process, the first thin film transistor T1 is turned on to collect a photocurrent formed after the light reflected by the fingerprint is received by the photoelectric sensor 3, so as to perform fingerprint identification. The second thin film transistor T2 is used to form a pixel circuit, one pixel circuit is electrically connected to one light emitting device 2, and the pixel circuit is used to control the light emitting device 2 connected thereto to emit light or to turn off. A plurality of second thin film transistors T2 may be included in one pixel circuit, for example, in the most basic 2T1C pixel circuit, including two second thin film transistors T2 and one capacitor, and only one second thin film transistor T2 directly connected to the light emitting device 2 is shown in fig. 1 and the subsequent drawings for illustration in order to clearly show the key structure of the display substrate. In specific implementations, the pixel circuit may be a 2T1C pixel circuit, a 6T1C pixel circuit, a 7T1C pixel circuit, or the like, which is not limited herein.

In specific fabrication, the driving circuit layer 12 may be fabricated using Low Temperature Polysilicon (LTPS) TFT technology, oxide semiconductor TFT technology, or low temperature polysilicon Oxide (Low Temperature Polycrystalline Oxide, LTPO) TFT technology. In LTPO technology, at least part of the thin film transistors in the driving circuit layer 12 are low temperature polysilicon thin film transistors, and the rest are oxide semiconductor thin film transistors, so that the advantages of the low temperature polysilicon thin film transistors and the oxide semiconductor thin film transistors can be combined, and the low temperature polysilicon thin film transistors have higher electron mobility, faster reaction speed and lower power consumption. Taking LTPO driving back plate as an example, the first thin film transistor T1 connected to the photosensor 3 may be an oxide semiconductor thin film transistor, and a double gate oxide semiconductor thin film transistor may be used in the implementation. In the pixel circuit connected to the light emitting device 2, an oxide semiconductor thin film transistor may be used in part, and a low-temperature polysilicon thin film transistor may be used in part, which is not limited thereto. The LTPO drive backboard specifically comprises the following steps:

1. depositing a low-temperature polysilicon layer on a substrate 11, and forming a plurality of low-temperature polysilicon active layers through patterning processes such as exposure, development, etching and the like, wherein one low-temperature polysilicon active layer is used for forming one low-temperature polysilicon thin film transistor;

2. At a low temperature of a plurality ofDeposition of SiN on the side of the crystalline silicon active layer facing away from the substrate 11 _x Or SiO _x Forming a first Gate Insulator (GI) by using an insulating material;

3. a side of the first Gate insulating layer facing away from the substrate 11 is deposited with a conductive material such as metal, and a plurality of first gates (gates) are formed through patterning, wherein the first gates are used to form gates of the low-temperature polysilicon thin film transistor;

4. depositing SiN on the side of the first gate facing away from the substrate 11 _x Or SiO _x Forming a second gate insulating layer from the insulating material;

5. depositing a conductive material such as metal on one side of the second gate insulating layer away from the substrate 11, and forming a plurality of second gates through patterning, wherein the second gates are used for forming bottom gates of oxide semiconductor thin film transistor light, and the second gates can also be used for shielding light incident to the oxide semiconductor active layer, so as to reduce leakage current;

6. deposition of SiN on the side of the second gate facing away from the substrate 11 _x Or SiO _x An insulating material for forming a first interlayer Insulating Layer (ILD);

7. depositing an oxide semiconductor layer on one side of the first interlayer insulating layer away from the substrate 11, forming a plurality of oxide semiconductor active layers by patterning processes such as exposure, development, etching, and the like, wherein one of the oxide semiconductor active layers is used for forming one oxide semiconductor thin film transistor;

8. Deposition of SiN on the side of the oxide semiconductor active layer facing away from the substrate 11 _x Or SiO _x Forming a third gate insulating layer from the insulating material;

9. depositing a conductive material such as metal on the side of the third gate insulating layer away from the substrate 11, and forming a plurality of third gates through patterning, wherein the third gates are used for forming top gates of oxide semiconductor thin film transistor light;

10. deposition of SiN on the side of the third gate facing away from the substrate 11 _x Or SiO _x Forming a second interlayer insulating layer by using the insulating material;

11. opening the second interlayer insulating layer and the third gate insulating layer to form a through hole exposing the oxide semiconductor active layer; forming a through hole exposing the low-temperature polysilicon active layer by perforating the second interlayer insulating layer, the third gate insulating layer, the first interlayer insulating layer, the second gate insulating layer and the first gate insulating layer;

12. depositing conductive materials such as metal on one side of the second interlayer insulating layer away from the substrate to form a source-drain metal layer, filling the through holes with the conductive materials, respectively electrically connecting the conductive materials with the oxide semiconductor active layer and the low-temperature polysilicon active layer, forming a source electrode and a drain electrode of the oxide semiconductor thin film transistor through a patterning process, and forming the source electrode and the drain electrode of the low-temperature polysilicon thin film transistor;

13. Deposition of SiN on the side of the source drain metal layer facing away from the substrate 11 _x Or SiO _x Forming a first passivation layer (Passivation Layer, PVX for short) by using the insulating materials;

14. covering organic materials such as resin on one side of the first passivation layer, which is away from the substrate, to form a first flat layer, wherein the first flat layer is used for forming a flat surface, so that the follow-up manufacturing of structures such as a photoelectric sensor and the like is facilitated;

15. depositing SiN on the side of the first planar layer facing away from the substrate 11 _x Or SiO _x And the insulating material, a second passivation layer is formed to further protect the driving back plate 1.

The manufacturing process of the driving backboard according to the embodiment of the invention is only used for illustration, and in the specific implementation, the manufacturing steps may be increased or decreased, the specific order of the steps may be changed, etc., according to the specific type and structure of the driving backboard 1, which is not limited herein.

The light emitting device 2 is located above the driving back plate 1 and is electrically connected to the driving back plate 1. Specifically, the light emitting device 2 is disposed on a side of the drive wiring layer 12 facing away from the substrate 11. The light emitting device 2 may be an organic light emitting diode (Organic Light Emitting Diode, abbreviated as OLED). As shown in fig. 1, the light emitting device 2 includes a first electrode 21 and a second electrode 22 disposed opposite to each other, and a light emitting functional layer 23 between the first electrode 21 and the second electrode 22. Wherein the first electrode 21 may be an anode and the second electrode 22 may be a cathode; alternatively, the first electrode 21 may be a cathode, and the second electrode 22 may be an anode, which is not limited herein. The second electrode 22 is located on a side of the first electrode 21 facing away from the substrate 11, where the side of the second electrode 22 is the light emitting side of the light emitting device 2 in implementation, so that the second electrode 22 may be made of a transparent conductive material to improve light transmittance. The second electrode 22 may cover the entire surface of the display substrate, so as to be shared by the light emitting devices 2 to reduce the difficulty of manufacturing, which is not limited herein. The plurality of light emitting functional layers 23 may include a hole injecting layer, a hole transporting layer, an organic light emitting layer, an electron transporting layer, and an electron injecting layer, which are stacked. Wherein the hole injection layer is located on the side near the anode and the electron injection layer is located on the side near the cathode. The organic light emitting layer adopts organic light emitting material to form organic light emitting diode. In specific implementation, the light-emitting functional layer may further include more or fewer film structures, which are not limited herein. In specific implementation, the light emitting device 2 may be a light emitting device such as a Micro light emitting diode (Micro Light Emitting Diode, abbreviated as Micro LED), which is not limited herein.

The photosensor 3 is located between the light emitting device 2 and the drive back plate 1, and is electrically connected to the drive back plate 1. The photoelectric sensor 3 is used for receiving light reflected by the fingerprint in the fingerprint identification process to generate photocurrent for fingerprint identification. The photosensor 3 may be a PIN photodiode. The PIN photodiode includes a third electrode 31, a photoelectric conversion layer 32, and a fourth electrode 33, which are stacked. Wherein the photoelectric conversion layer 32 includes a first doped layer, an intrinsic semiconductor layer, and a second doped layer. In specific implementation, the first doped layer, the intrinsic layer and the second doped layer may be amorphous silicon (a-Si) layers, where the first doped layer may be a P-type doped layer, the second doped layer may be an N-type doped layer, and the intrinsic layer is an undoped layer, which is not limited herein. The third electrode 31 is electrically connected to the second thin film transistor T2. The fourth electrode 33 is located on the side of the third electrode 31 facing away from the substrate 11, the fourth electrode 33 being used to apply a reverse bias to the PIN photodiode. In specific implementation, the photoelectric sensor 3 may be another type of photoelectric conversion device, which is not limited herein.

In the embodiment of the invention, the photoelectric sensor 3 is integrated between the driving backboard 1 and the light emitting device 2, so that the thickness of the display substrate is reduced compared with the scheme of externally hanging the fingerprint identification module at the bottom of the display substrate, and in the process of fingerprint identification, the light reflected by the fingerprint does not need to irradiate onto the photoelectric sensor 3 after passing through the driving backboard 1, thereby being beneficial to reducing the light loss and improving the signal quality. And the driving backboard 1 does not need to adopt a high-transmittance setting mode, which is beneficial to improving the density of the pixel circuit, thereby improving the resolution of the display substrate.

Further, as shown in fig. 1, the display substrate further comprises a reflective structure 6. The reflective structure 6 is located between the light emitting device 2 and the photosensor 3. The reflecting structure 6 is used for reflecting the incident light rays with the incident angle larger than the first set angle to the reflecting structure 6. Whereas for incident light rays having an angle of incidence to the reflective structure 6 smaller than the first set angle, the reflective structure 6 may be at least partially transmissive. By arranging the reflecting structure 6, a part of large-angle light rays which are emitted by the light emitting device 2 directly and spread in the direction of the photoelectric sensor 3 and a part of large-angle light rays which are emitted by the light emitting device 2 and spread in the direction of the photoelectric sensor 3 after being reflected by the reflecting film layer in the display substrate can be reflected, the quantity of stray light received by the photoelectric sensor 3 in the fingerprint detection process is reduced, the occupation ratio of the light rays reflected by the fingerprint is improved, the signal to noise ratio of detection signals is improved, and the detection precision is improved.

Specifically, the light reflected by the fingerprint received by the photosensor 3 is generally collimated by the collimating structure, and has a smaller divergence angle, and the incident angle when entering the reflecting structure 6 is smaller. When the first preset angle is larger than the maximum incidence angle of the light reflected by the fingerprint, the transmittance of the light reflected by the fingerprint cannot be influenced, so that the transmittance of the light reflected by the fingerprint can be ensured, and the transmittance of the stray light is reduced.

For example, as shown in fig. 1, the display substrate further includes an encapsulation protection layer 5 and a black matrix 61. The encapsulation protection layer 5 is located at one side of the light emitting device 2 away from the driving backboard 1, and is used for protecting the light emitting device 2 and preventing water and oxygen in the environment from invading the light emitting device 2 to disable the light emitting material. The black matrix 61 is located on the side of the encapsulation protection layer 5 facing away from the driving back plate 11. The black matrix 61 is provided with a plurality of first openings H1, one first opening H1 corresponds to one light emitting device 2, and the orthographic projection of the light emitting device 2 on the driving back plate 1 is located within the orthographic projection of the first opening H1 on the driving back plate 1. The first opening H1 is provided therein with a filter layer 62, and the filter layer 62 is used for filtering stray light and transmitting light with the same color as the light emitted by the corresponding light emitting device 2. The black matrix 61 and the filter layer 62 form a COE (Color Filter on Encapsulation, abbreviated as COE) structure for reducing the ambient light reflected by the metal electrodes and the metal traces inside the display substrate, improving the contrast ratio and reducing the color shift. The black matrix 51 is further provided with a second opening H2, one second opening H2 corresponds to one photosensor 3, and the orthographic projection of the second opening H2 on the driving back plate 1 is located in the orthographic projection of the corresponding photosensor 3 on the driving back plate 1. The second opening H2 is for transmitting light reflected by the fingerprint to the corresponding photodiode 3.

The display substrate further comprises a light blocking structure 4. The light blocking structure 4 is located between the photosensor 3 and the black matrix 61. The front projection of the photosensor 3 onto the driving backplate 1 is located within the front projection of the light blocking structure 4 onto the driving backplate 1. The light blocking structure 4 is provided with a third opening H3. The orthographic projection of the third opening H3 on the driving back plate 1 is located within the orthographic projection of the second opening H2 on the driving back plate 1. The light blocking structure 4 is used for blocking part of light rays propagating towards the direction of the photoelectric sensor 3, and the third port H3 is used for transmitting part of light rays propagating towards the direction of the photoelectric sensor 3, so that the divergence angle of the light rays reflected by the fingerprint received by the photoelectric sensor 3 is reduced, and the collimation degree of the light rays reflected by the fingerprint received by the photoelectric sensor 3 is improved. For example, when the collimation angle θ of the light reflected by the fingerprint after being collimated by the second opening H2 and the third opening H3 is 14 °, the first setting angle is set to be greater than 14 °, so that the photoelectric sensor 3 can be ensured to receive all the collimated light reflected by the fingerprint, and the proportion of the signal light is increased. In practical implementation, the collimation angle θ of the light reflected by the fingerprint received by the photoelectric sensor 3 may be set according to actual requirements, which is not limited herein. And the magnitude of the first predetermined angle depends on the material and specific structure of the reflecting structure 6, which is not limited herein.

In some embodiments, as shown in fig. 1, the light blocking structure 4 may be arranged at a side of the reflective structure 6 facing away from the photosensor 3. In practice, as shown in fig. 1, the light blocking structure 4 may be arranged in the same layer as the first electrode 21. The light blocking structure 4 may be electrically connected to the fourth electrode 33 of the photosensor 3, and the light blocking structure 4 is also connected to a bias voltage line and inputs a bias voltage to the fourth electrode 33 of the photosensor 3 through the bias voltage line.

In some embodiments, the light blocking structure 4 may further multiplex a pixel defining layer (Pixel Define Layer, abbreviated as PDL), so as to reduce the number of layers and reduce the manufacturing difficulty.

In some embodiments, the light blocking structure 4 may also be disposed between the reflective structure 6 and the photosensor 3, without limitation.

In some embodiments, the collimating structure for collimating the light reflected by the fingerprint received by the photosensor 3 may be other structures, which is not limited herein.

FIG. 2a is a schematic diagram of a cross-sectional structure of a display substrate according to an embodiment of the invention; fig. 2b is a schematic diagram of a third cross-sectional structure of the display substrate according to the embodiment of the invention.

In some embodiments, as shown in fig. 2a and 2b, the reflective structure 6 includes a first dielectric layer 61 and a second dielectric layer 62 that are sequentially stacked in a direction away from the driving backplate 1. Wherein the refractive index of the first dielectric layer 61 is smaller than the refractive index of the second dielectric layer 62. The contact surface of the second dielectric layer 62 and the first dielectric layer 61 forms an interface where light rays are transmitted from the optically dense medium to the optically sparse medium, the light rays which are incident to the interface of the second dielectric layer 62 and the first dielectric layer 61 at an angle larger than a critical angle from one side of the reflecting structure 6, which is away from the driving back plate 1, are totally reflected at the interface of the second dielectric layer 62 and the first dielectric layer 61, so that the incident angle light rays which are incident to the photoelectric sensor 3 through the reflecting structure 6 can be reduced, the quantity of stray light received by the photoelectric sensor 3 is reduced, and the signal to noise ratio is improved. The first set angle satisfies that when the light beam enters the reflective structure 6 at the first set angle, the incident angle when the light beam enters the interface between the second dielectric layer 62 and the first dielectric layer 61 after being refracted by the second dielectric layer 62 is greater than or equal to the critical angle of total reflection of the light beam at the interface between the second dielectric layer 62 and the first dielectric layer 61.

In specific implementation, the first dielectric layer 61 and the second dielectric layer 62 may both be made of inorganic materials or both be made of organic materials. In some embodiments, the first dielectric layer 61 may be made of an organic material, and the second dielectric layer 62 may be made of an inorganic material. In some embodiments, the first dielectric layer 61 may be made of an inorganic material, and the second dielectric layer 62 may be made of an organic material. As long as the refractive index requirement is satisfied, the present invention is not limited thereto. For example, the first dielectric layer 61 may be made of an organic material such as a resin having a refractive index of 1.15 to 1.25, specifically 1.19, a dielectric constant of about 2 to 3, good insulating properties, a transmittance of 96% or more for light in the visible wavelength range (specifically 380nm to 780 nm), and a thickness of about 1.19The second dielectric layer 62 may be an inorganic material having a refractive index of 1.95-2.05, and may specifically be silicon nitride (SiN) having a refractive index of about 1.95 _x ) And the like, are not limited herein.

In some embodiments, the reflective structure 6 may also be other structures, such as a bragg mirror, which is not limited herein.

In some embodiments, as shown in fig. 2a, the display substrate further comprises a second planarization layer 7. The second planar layer 7 is located between the photosensor 3 and the reflective structure 6. The second flat layer 7 is used for forming a flat surface on the side of the photosensor 3 facing away from the driving back plate 1, so that the subsequent manufacturing of the reflecting structure 6 and the light emitting device is facilitated.

In some embodiments, as shown in fig. 2b, the material of the first dielectric layer 61 is an organic material. The first dielectric layer 61 is also used to form a flat surface on the side of the photosensor 3 facing away from the driving backplate 1 to facilitate subsequent fabrication of the light emitting device. Multiplexing the first dielectric layer 61 into a flat layer can avoid setting a separate flat layer, which is beneficial to reducing the number of film layers and reducing the thickness of the display substrate.

FIG. 3 is a schematic cross-sectional view of a display substrate according to an embodiment of the present invention; fig. 4 is a schematic top view of a display substrate according to an embodiment of the invention.

In some embodiments, as shown in fig. 3 and 4, the photosensor 3 is located between two adjacent light emitting devices 2, and the orthographic projection of the photosensor 3 on the driving back plate 1 is located in a spacing area between the orthographic projections of two adjacent light emitting devices 2 on the driving back plate 1, so as to avoid that the light emitting devices 2 shade the light reflected by the fingerprint propagating towards the direction of the photosensor 3. In particular, as shown in fig. 4, the light emitting device 2 may include a red light emitting device R, a green light emitting device G, and a blue light emitting device B arranged in a set manner, and one of the red light emitting device R, one of the green light emitting device G, and one of the blue light emitting device B may constitute one pixel unit for image display. The red light emitting device R, the green light emitting device G, and the blue light emitting device B may be arranged in other ways, which are not limited herein.

In particular, the distance between the light emitting device 2 and the photosensor 3 is such that the incident angle of the light emitted from the light emitting device 2 in the direction of the photosensor 3 is larger than the first set angle when the light is incident on the reflective structure 6. The distance between the light emitting device 2 and the photosensor 3 may be the distance between the light emitting device 2 and the photosensor 3 in the three-dimensional space, or may be the distance between the front projection of the light emitting device 2 on the driving back plate 1 and the front projection of the photosensor 3 on the driving back plate 1, which is not limited herein. The light emitted from the light emitting device 2 in the direction of the photoelectric sensor 3, specifically, refers to the light directly emitted from the light emitting device 2, and before being reflected, passes through the photoelectric sensor 3 along the extension line of the propagation direction. When the distance between the light emitting device 2 and the photoelectric sensor 3 meets the above condition, the light emitted by the light emitting device 2 along the direction smaller than or equal to the first set angle does not directly irradiate the photoelectric sensor 3 after being transmitted by the reflecting structure, but the light emitted by the light emitting device 2 along the direction larger than the first set angle is reflected by the reflecting structure 6 although passing through the photoelectric sensor 3 along the extension line of the propagation direction, and cannot pass through the reflecting structure 6, so that the quantity of the light emitted by the light emitting device 2 directly irradiating the photoelectric sensor 3 can be reduced, the light ratio of fingerprint reflection is further improved, and the signal to noise ratio is improved.

In the specific arrangement, since the farther the distance between the light emitting device 2 and the photosensor 3 is, the larger the incident angle of the light emitted from the light emitting device 2 and passing through the photosensor 3 along the extension line of the propagation direction before reflection occurs when entering the reflecting structure 6 is, when the distance between the light emitting device 2 and the photosensor 3 is calculated, the distance between the nearest one of the light emitting devices 2 and the photosensor 3 satisfies the above condition, and the other light emitting devices 2 also satisfy the above condition.

Taking the example that the reflective structure includes the first dielectric layer 61 and the second dielectric layer 62, the distance calculation process between the light emitting device 2 and the photosensor 3 is exemplified. And wherein the refractive index n1 of the first dielectric layer 61 is 1.19, the refractive index n2 of the second dielectric layer 62 is 1.98, and the critical angle α of total reflection of light rays according to the principle of total reflection satisfies:from this, the magnitude of the critical angle α can be calculated to be about 37 °.

Since the specific position of the light emitting device 2 depends on the position where the first electrode 21 is provided, the distance between the light emitting device 2 and the photosensor 3 may be represented by the distance between the first electrode 21 and the photosensor 3 for simplifying the calculation process. When the number and thickness of the film layers between the first electrode 21 and the photosensor 3 are determined, the distance between the first electrode 21 and the photosensor 3 depends on the distance between the front projection of the first electrode 21 on the driving backplate 1 and the front projection of the photosensor 3 on the driving backplate 1.

To simplify the calculation process, the light emitted by the light emitting device 2 in the direction of the photosensor 3 has a minimum angle of incidence α when it is incident on the reflective structure 6 ₁ The following conditions are satisfied:

wherein a represents the minimum distance between the front projection of the first electrode 21 on the driving back plate 1 and the front projection of the photoelectric sensor 3 on the driving back plate 1; b is the thickness of the film layer between the first electrode 21 and the photosensor 3. Ignoring the influence of the refraction of the second dielectric layer 62 on the incident angle of the light incident on the interface between the first dielectric layer 61 and the second dielectric layer 62, the value of the first set angle takes the critical angle α, so that the light emitted from the light emitting device 2 towards the direction of the photoelectric sensor 3 enters the reflecting structure 6 at the minimum incident angle α ₁ The requirements are satisfied: alpha ₁ >Alpha. In general, the thickness b of the film layer (including the protective layer (cover), the second planarization layer 7, the first dielectric layer 61, the second dielectric layer 62, etc.) between the first electrode 21 and the photosensor 3 is about 2.6 μm, and then the minimum distance a between the front projection of the first electrode 21 on the driving back plate 1 and the front projection of the photosensor 3 on the driving back plate 1 satisfies a=btan α ₁ >btan α=2.6×tan 37 ° = 1.959 μm. That is, when the minimum distance between the front projection of the first electrode 21 on the driving back plate 1 and the front projection of the photoelectric sensor 3 on the driving back plate 1 is larger than 1.959 μm, the distance between the light emitting device 2 and the photoelectric sensor 3 can be satisfied, and the incident angle of the light emitted from the light emitting device 2 to the direction of the photoelectric sensor 3 when the light is incident on the reflecting structure 6 is larger than the first set angle. Since the above calculation process is simplified, the minimum distance a between the front projection of the first electrode 21 on the driving back plate 1 and the front projection of the photoelectric sensor 3 on the driving back plate 1 should be satisfied, namely a >a1, and a1>1.959 μm, for example, a1 may be 2. Mu.m, and is not limited thereto.

FIG. 5 is a schematic diagram of a cross-sectional structure of a display substrate according to an embodiment of the present invention; fig. 6 is a schematic top view of a display substrate according to a second embodiment of the invention.

In some embodiments, as shown in fig. 5 and 6, the display substrate further includes a touch electrode MT. The touch electrode MT is located at a side of the light emitting device 2 facing away from the driving back plate 1, and is used for realizing a touch function. The touch electrode MT may have a double-layer structure or a single-layer structure, and is not limited herein because of realizing a mutual capacitive touch substrate or a self-capacitive touch substrate. In particular, the distance between the touch electrode MT and the light emitting device 2 is satisfied, so that the incident angle when the light emitted from the light emitting device 2 is incident on the reflective structure 6 is greater than the first set angle after the light is reflected by the touch electrode in the direction of the photosensor 3. The distance between the touch electrode and the light emitting device 2 may be the distance between the touch electrode MT and the light emitting device 2 in the three-dimensional space, or may be the distance between the front projection of the touch electrode MT on the driving back plate 1 and the front projection of the light emitting device 2 on the driving back plate 1, which is not limited herein. The light emitted from the light emitting device 2 is reflected towards the direction of the photoelectric sensor 3 through the touch electrode MT, specifically, when the light emitted from the light emitting device 2 propagates to the touch electrode MT, the reflected light reflected by the touch electrode MT passes through the photoelectric sensor 3 along the extension line of the propagation direction of the reflected light. When the distance between the touch electrode MT and the light emitting device 2 meets the above condition, the light ray reflected by the touch electrode MT and propagating along the direction smaller than or equal to the first set angle does not directly irradiate the photoelectric sensor 3 after being transmitted by the reflecting structure, but the light ray reflected by the touch electrode MT and exiting along the direction larger than the first set angle passes through the photoelectric sensor 3 along the extension line of the propagation direction, but part of the light ray is reflected by the reflecting structure 6 and cannot pass through the reflecting structure 6, so that the quantity of the light ray reflected by the touch electrode MT directly irradiating the photoelectric sensor 3 can be reduced, the light ray occupation ratio of fingerprint reflection is further improved, and the signal to noise ratio is improved.

Taking the example that the reflective structure includes the first dielectric layer 61 and the second dielectric layer 62, a distance calculating process between the touch electrode and the light emitting device 2 will be exemplarily described. And wherein the refractive index n1 of the first dielectric layer 61 is 1.19, the refractive index n2 of the second dielectric layer 62 is 1.98, and the critical angle α of total reflection of light rays according to the principle of total reflection satisfies:from this, the critical angle α can be calculatedIs about 37.

Taking a mutual capacitive touch electrode as an example, as shown in fig. 5, the touch electrode includes a first touch electrode MT1 and a second touch electrode MT2 stacked in a direction away from the substrate 1, and for simplifying the calculation process, the distance between the first touch electrode MT1 and the first electrode 21 of the light emitting device 2 is indicated by the distance between the touch electrode and the light emitting device 2. When the number and thickness of the film layers between the first touch electrode MT1 and the first electrode 21 are determined, the distance between the first touch electrode MT1 and the first electrode 21 depends on the distance between the orthographic projection of the first touch electrode MT1 on the driving back plate 1 and the orthographic projection of the first electrode 21 on the driving back plate 1.

In order to simplify the calculation process, the light emitted from the light emitting device 2 is reflected by the first touch electrode MT1 towards the direction of the photosensor 3, and then enters the reflective structure 6 at the minimum incident angle α ₂ The following conditions are satisfied:

wherein c represents the minimum distance between the front projection of the first touch electrode MT1 on the driving back plate 1 and the front projection of the first electrode 21 on the driving back plate 1; d is the thickness of the film layer between the first touch electrode MT1 and the first electrode 21. Ignoring the influence of the refraction of the second dielectric layer 62 on the incident angle of the light incident on the interface between the first dielectric layer 61 and the second dielectric layer 62, the first set angle takes the critical angle α, so that the light reflected by the first touch electrode MT1 in the direction of the photoelectric sensor 3 has the minimum incident angle α when incident on the reflective structure 6 ₂ The requirements are satisfied: alpha ₂ >Alpha. In general, the thickness d of the film layer (including the pixel defining layer, the packaging protecting layer, the cathode layer, etc.) between the first touch electrode MT1 and the first electrode 21 is about 7.38 μm, and the minimum distance c between the front projection of the first touch electrode MT1 on the driving back plate 1 and the front projection of the first electrode 21 on the driving back plate 1 is as follows: c=d tan α ₂ >dtna=7.38×tan 37 ° =5.55 μm. Namely, the orthographic projection of the first touch electrode MT1 on the driving backboard 1 and the orthographic projection of the first electrode 21 on the driving backboardWhen the minimum distance of orthographic projection on the sensor 1 is larger than 5.55 μm, the distance between the light emitting device 2 and the touch electrode can be satisfied, so that the incident angle of the light reflected by the touch electrode in the direction of the photoelectric sensor 3 when the light is incident on the reflecting structure 6 is larger than the first set angle. Since the above calculation process is simplified, the minimum distance c between the front projection of the first electrode 21 on the driving back plate 1 and the front projection of the photoelectric sensor 3 on the driving back plate 1 should be satisfied, i.e., c >c1, and c1>5.55 μm, for example, c1 may be 5.6. Mu.m, which is not limited thereto

Fig. 7 is a schematic cross-sectional view of a display substrate according to an embodiment of the invention.

In some embodiments, as shown in fig. 7, the display substrate further comprises a light confining structure 8. The light confinement structure 8 is located between the light emitting device 2 and the touch electrode MT. The light limiting structure 8 is configured to limit light incident on the light limiting structure 8 at a larger angle than the second set angle to propagate inside the light limiting structure 8, and the part of light does not propagate to the touch electrode MT, so that the light emitted by the light emitting device 2 at a large angle can be further prevented from propagating to the direction of the photoelectric sensor 3 after passing through the touch electrode MT, and the amount of stray light is further reduced. In particular, the second set angle may be smaller than or equal to the first set angle, so as to reduce the number of high-angle light reflected by the touch electrode MT. In some embodiments, the second setting angle may be larger than the first setting angle, so as to expand the material selection range of the light confinement structure 8, which is not limited herein.

In some embodiments, as shown in fig. 7, the light confinement structure 8 includes a third dielectric layer 81, a fourth dielectric layer 82, and a fifth dielectric layer 83, which are sequentially stacked in a direction away from the substrate 1. The refractive index of the fourth dielectric layer 82 is greater than that of the third dielectric layer 81 and greater than that of the fifth dielectric layer 83, so that an interface where light propagates from the optically dense medium to the optically sparse medium is formed at the contact surface of the fourth dielectric layer 82 and the third dielectric layer 81 and the contact surface of the fourth dielectric layer 82 and the fifth dielectric layer 83, and an optical waveguide structure is formed. The light is incident into the light-confining structure 8 at an incident angle greater than the second set angle, propagates in the light-confining structure 8 in the transverse direction in the form of a waveguide, and reduces the light incident into the touch electrode MT. In particular, the third dielectric layer 81 and the fifth dielectric layer 83 may be made of the same material, and thus have the same refractive index, which is not limited herein.

In some embodiments, as shown in fig. 7, the display substrate further includes an encapsulation protection layer 5. The encapsulation protection layer 5 includes at least one film layer. Specifically, the encapsulation protection layer 5 may include a thin film encapsulation (Thin Film Encapsulation, abbreviated as TFE) layer and a buffer layer between the TFE layer and the light confinement structure 8. Wherein the TFE layer may be of a single layer structure or a multilayer structure. In the case of a single layer structure, the TFE layer may be made of a single layer of inorganic material. In the case of a multilayer structure, the TFE layer may be a sandwich structure including a first inorganic layer, an organic layer, and a second inorganic layer, which are sequentially stacked in a direction away from the drive back plate 1. In particular embodiments, the TFE layer may also include more or fewer membrane layers, as not limited herein.

In some embodiments, at least one of the third dielectric layer 81, the fourth dielectric layer 82, and the fifth dielectric layer 83 in the light confinement structure 8 may be multiplexed into at least one film layer in the encapsulation protection layer 5, so that the number of film layers of the display substrate may be reduced, and the thickness of the display substrate may be reduced.

FIG. 8 is a schematic diagram of a cross-sectional structure of a display substrate according to an embodiment of the present invention; fig. 9 is a third schematic top view of a display substrate according to an embodiment of the invention.

In an embodiment of the present invention, as shown in fig. 1 and 8, the display substrate further includes a pixel defining layer 9. The pixel defining layer 9 is located on the side of the reflective structure 6 facing away from the driving backplate 1. The pixel defining layer 9 comprises a pixel defining layer body 91 and support posts 92 at a side of the pixel defining layer body 91 facing away from the reflective structure 6. In practice, the support posts 92 and the pixel defining layer body 91 may be fabricated at the same time, for example, after covering the material of the pixel defining layer 9, the surface of the pixel defining layer 9 is etched to form a plurality of support posts 92 separated from each other. The pixel defining layer body 91 is provided with a plurality of pixel openings, one pixel opening corresponds to each first electrode 21, the pixel opening exposes the corresponding first electrode 21, and the light emitting functional layer 23 of the light emitting device 2 is at least partially formed in the pixel opening.

In particular, as shown in FIG. 8, the cross-sectional shape of the support post 92 may be trapezoidal. The support post 92 includes a top surface 921 parallel to the pixel defining layer body 91 and a slope 922 between the top surface 921 and the pixel defining layer body 91 for connecting the top surface 921 and the pixel defining layer body 91. The surface of the support post 92 is generally covered with the second electrode 22, and due to the difference between the refractive index of the support post 92 and the refractive index of the second electrode 22, when the light emitted from the light emitting device 2 enters the inclined surface 922 of the support post 92, the light is reflected at the inclined surface 922 of the support post, and part of the reflected light propagates towards the direction where the photoelectric sensor 3 is located. In the embodiment of the present invention, the distance between the support post 92 and the photoelectric sensor 3 is satisfied, so that the incident angle when the light emitted from the light emitting device 2 is incident on the reflective structure 6 is greater than the first set angle after being reflected by the inclined surface 922 of the support post 92 toward the photoelectric sensor 3. The distance between the support column 92 and the photoelectric sensor 3 may be the distance between the support column 92 and the photoelectric sensor 3 in the three-dimensional space, or may be the distance between the front projection of the support column 92 on the driving back plate 1 and the front projection of the photoelectric sensor 3 on the driving back plate 1, which is not limited herein. The light emitted from the light emitting device 2 is reflected towards the direction of the photoelectric sensor 3 through the inclined plane 922 of the support column 92, specifically, when the light emitted from the light emitting device 2 propagates to the support column 92, the reflected light reflected by the support column 92 passes through the photoelectric sensor 3 along the extension line of the propagation direction of the reflected light. When the distance between the support column 92 and the photoelectric sensor 3 satisfies the above condition, the light ray which is reflected by the inclined plane 922 of the support column 92 and propagates along the direction smaller than or equal to the first set angle does not directly irradiate the photoelectric sensor 3 after being transmitted by the reflecting structure, but the light ray which is reflected by the inclined plane 922 of the support column 92 and exits along the direction larger than the first set angle, wherein part of the light ray passes through the photoelectric sensor 3 along the extension line of the propagation direction, but the part of the light ray is reflected by the reflecting structure 6 and cannot pass through the reflecting structure 6, so that the quantity of the light ray which is reflected by the inclined plane 922 of the support column 92 and directly irradiates the photoelectric sensor 3 can be reduced, the light ray occupation ratio of fingerprint reflection is further improved, and the signal to noise ratio is improved.

Taking the example that the reflective structure includes the first dielectric layer 61 and the second dielectric layer 62, a distance calculating process between the touch electrode and the light emitting device 2 will be exemplarily described. And wherein the refractive index n1 of the first dielectric layer 61 is 1.19, the refractive index n2 of the second dielectric layer 62 is 1.98, and the critical angle α of total reflection of light rays according to the principle of total reflection satisfies:from this, the magnitude of the critical angle α can be calculated to be about 37 °.

As shown in fig. 8, the reflection of light in the direction of the photosensor 3 at the inclined surface 922 of the support column 92 occurs mainly at the side of the inclined surface 922 of the support column 92 away from the photosensor 3. As can be seen from fig. 8, the incident angle α of the light beam incident on the reflective structure 6 is reflected by the inclined surface 922 of the support column 92 on the side far away from the photosensor 3 and in the direction of the photosensor 3 at the junction of the inclined surface 922 and the top surface 921 ₃ Minimum. When the number and thickness of the film layers between the support posts 92 and the photosensors 3 are determined, the distance between the support posts 92 and the photosensors 3 depends on the distance of the orthographic projections of both on the drive backplate 1. Thus, the light emitted from the light emitting device 2 is reflected by the inclined surface 922 of the support column 92 on the side far away from the photosensor 3 and in the direction of the photosensor 3 at the junction of the inclined surface 922 and the top surface 921, and then enters the reflective structure 6 at the minimum incident angle α ₃ The following conditions are satisfied:

wherein e represents the distance between the orthographic projection of the inclined plane 922 on the support column 92 on the side far away from the photoelectric sensor 3 and the orthographic projection of the photoelectric sensor 3 on the driving backboard 1 at the connection of the inclined plane 922 and the top plane 921; f represents the thickness of the film layer between the top surface 921 of the support post 92 and the photosensor 3. Ignoring the influence of the refraction of the second dielectric layer 62 on the incident angle of the light incident on the interface between the first dielectric layer 61 and the second dielectric layer 62, the critical angle α is taken as the value of the first set angle, so that the light is emittedThe light emitted by the device 2 is reflected to the direction of the photoelectric sensor 3 at the connection part of the inclined plane 922 and the top surface 921 after being reflected to the photoelectric sensor 3 at the side of the inclined plane 922 of the support column 92 far away from the photoelectric sensor 3, and then enters the reflecting structure 6 at the minimum incident angle alpha ₃ The method meets the following conditions: alpha ₃ >Alpha. Typically, the thickness f of the film layer between the top surface 921 of the support post 92 and the photosensor 3 (including the protective layer (cover) covering the photosensor 3, the second planarization layer 7, the first dielectric layer 61, the second dielectric layer 62, the pixel defining layer body 91, the support post 92, etc.) is about 3.7 μm, and then, on the side of the inclined surface 922 of the support post 92 away from the photosensor 3, the distance e between the orthographic projection of the inclined surface 922 and the top surface 921 on the driving back plate 1 and the orthographic projection of the photosensor 3 on the driving back plate 1 is as follows: e=ftan alpha ₃ >ftan α=3.7×tan 37 ° =2.937 μm. That is, when the distance between the orthographic projection of the inclined plane 922 of the support column 92 on the side far away from the photoelectric sensor 3 and the orthographic projection of the photoelectric sensor 3 on the driving back plate 1 at the connection position of the inclined plane 922 and the top surface 921 is greater than 2.937 μm, the distance between the support column 92 and the photoelectric sensor 3 can be satisfied, so that the incident angle when the light emitted from the light emitting device 2 is incident to the reflective structure 6 is greater than the first set angle after being reflected to the direction of the photoelectric sensor 3 by the inclined plane 922 of the support column 9. Since the distance e calculated in the calculation process is larger than the minimum distance between the support column 92 and the photoelectric sensor 3, in the implementation, the requirement can be met by only setting the minimum distance between the support column 92 and the photoelectric sensor 3 (the distance between the support column 92 and the nearest two points on the photoelectric sensor 3) to be larger than e.

The display substrate provided by the embodiment of the invention can further comprise the following steps after the drive backboard is manufactured:

1. the second passivation layer, the first planarization layer, and the first passivation layer are opened with a via hole exposing the drain electrode of the first thin film transistor T1 and a via hole exposing the drain electrode of the second thin film transistor T2 directly connected to the light emitting device 2. Depositing a conductive material such as metal on the side of the second passivation layer away from the substrate 1, filling the through holes with the conductive material, electrically connecting the drain electrode of the first thin film transistor T1 and the drain electrode of the second thin film transistor T2, and forming a third electrode 31 and a connection portion for connecting the light emitting device 2 and the drain electrode of the second thin film transistor T2 by patterning;

2. Depositing a semiconductor material on the side of the third electrode 31 facing away from the substrate, and fabricating a photoelectric conversion layer 32 by a patterning process;

3. a fourth electrode 33 is formed by depositing conductive materials such as Indium Tin Oxide (ITO) on the side of the photoelectric conversion layer 32 away from the substrate, and the manufacturing of the photoelectric sensor 3 is completed;

4. deposition of SiN on the side of the photosensor 3 facing away from the substrate base plate _x Or SiO _x An insulating material to form a protective layer (Cover);

5. covering organic materials such as resin on one side of the protective layer away from the substrate base plate to form a second flat layer, wherein the second flat layer is used for forming a flat surface, so that the subsequent manufacturing of structures such as a reflecting structure 6, a light-emitting device 2 and the like is facilitated;

6. sequentially forming a first dielectric layer 61 and a second dielectric layer 62 on one side of the second flat layer, which is away from the substrate, so as to finish the manufacture of the reflecting structure 6;

7. forming a through hole on the reflective structure 6, the second flat layer, and the protective layer (Cover) to expose the fourth electrode 33 and the connection portion electrically connected to the drain electrode of the second thin film transistor T2; depositing a conductive material such as metal on the side of the reflective structure 6 facing away from the substrate, filling the through holes with the conductive material, electrically connecting the conductive material with the fourth electrode 33 and the connection portion, and forming the light blocking structure 4 and the first electrode 21 by patterning;

8. A pixel defining layer 9 is made on the side of the light blocking structure 4 and the first electrode 21 facing away from the substrate base plate;

9. a light-emitting functional layer 23 is formed in the pixel opening of the pixel defining layer 9;

10. manufacturing a second electrode 22 covered on the whole surface on one side of the light-emitting functional layer 23 away from the substrate, and completing the manufacturing of the light-emitting device 2;

11. manufacturing a packaging protection layer 5 on one side of the second electrode 22 away from the substrate;

12. a third dielectric layer 81, a fourth dielectric layer 82 and a fifth dielectric layer 85 are sequentially deposited on one side, away from the substrate, of the packaging protection layer 5, and a light limiting structure 8 is manufactured;

13. sequentially manufacturing a first touch electrode, a buffer layer and a second touch electrode on one side of the light limiting structure 8, which is away from the substrate, so as to finish manufacturing the touch electrodes;

14. a protective layer is formed on the surface of the touch electrode, and then a black material is covered on the side of the protective layer facing away from the substrate, and a black matrix 62 is formed by a patterning process.

15. The first opening H1 of the black matrix 61 is filled with a filter material, and the filter layer 62 is formed, thereby completing the manufacture of the COE structure.

16. And manufacturing a protective layer on one side of the COE structure, which is away from the substrate, so as to protect the COE structure.

The above manufacturing process provided in the embodiment of the present invention is only used to illustrate the manufacturing process of the display substrate, and in the specific implementation, the manufacturing steps may be increased or decreased, the specific order of the steps may be changed, etc., according to the specific structure of the display substrate, which is not limited herein.

In a second aspect of the embodiments of the present invention, a display device is provided, including the display substrate provided in any one of the embodiments above. In specific implementation, the display device provided in the embodiment of the present invention has the same technical effects as the display substrate provided in any one of the embodiments, and will not be described herein.

While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.

It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims

1. A display substrate, comprising:

a drive back plate;

the photoelectric sensor is positioned between the light emitting device and the driving backboard and is electrically connected with the driving backboard;

2. The display substrate according to claim 1, wherein the reflective structure includes a first dielectric layer and a second dielectric layer sequentially stacked in a direction away from the driving back plate; the refractive index of the first dielectric layer is smaller than that of the second dielectric layer.

3. The display substrate of claim 2, wherein the material of the first dielectric layer is an organic material; the first dielectric layer is also used for forming a flat surface on one side of the photoelectric sensor, which faces away from the driving backboard.

4. A display substrate according to any one of claims 1 to 3, wherein a distance between the light emitting device and the photosensor is such that an incident angle of light emitted from the light emitting device in a direction of the photosensor when the light is incident on the reflective structure is larger than the first set angle.

5. A display substrate according to any one of claims 1 to 3, further comprising:

the touch electrode is positioned at one side of the light-emitting device, which is away from the driving backboard; the distance between the touch electrode and the light-emitting device is satisfied, so that the incident angle when the light emitted by the light-emitting device is incident to the reflecting structure is larger than the first set angle after the light is reflected to the direction of the photoelectric sensor through the touch electrode.

6. The display substrate of claim 5, further comprising:

the light limiting structure is positioned between the light emitting device and the touch electrode; the light confinement structure is configured to confine light incident on the light confinement structure at a greater than a second set angle to propagate within the light confinement structure.

7. The display substrate of claim 6, wherein the light confining structure includes a third dielectric layer, a fourth dielectric layer, and a fifth dielectric layer sequentially stacked in a direction away from the substrate; wherein the refractive index of the fourth dielectric layer is greater than the refractive index of the third dielectric layer and greater than the refractive index of the fifth dielectric layer.

8. The display substrate of claim 7, further comprising:

the packaging protection layer is positioned between the light-emitting device and the touch electrode; the packaging protection layer comprises at least one film layer;

at least one of the third dielectric layer, the fourth dielectric layer and the fifth dielectric layer is multiplexed into at least one film layer in the packaging protection layer.

9. A display substrate according to any one of claims 1 to 3, further comprising:

The pixel definition layer is positioned on one side of the reflecting structure, which is away from the driving backboard; the pixel definition layer comprises a pixel definition layer body and a support column positioned on one side of the pixel definition layer body away from the reflecting structure; the support column comprises a top surface parallel to the pixel definition layer body and an inclined surface positioned between the top surface and the pixel definition layer body and used for connecting the top surface and the pixel definition layer body;

the distance between the support column and the photoelectric sensor is satisfied, so that the incident angle when the light emitted by the light emitting device is incident to the reflecting structure is larger than the first set angle after the light is reflected in the direction of the photoelectric sensor by the inclined surface of the support column.

10. A display device comprising the display substrate according to any one of claims 1 to 9.