CN117452541A - A+ level solar simulation filter for photovoltaic and plating method thereof - Google Patents
A+ level solar simulation filter for photovoltaic and plating method thereof Download PDFInfo
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- CN117452541A CN117452541A CN202311530853.1A CN202311530853A CN117452541A CN 117452541 A CN117452541 A CN 117452541A CN 202311530853 A CN202311530853 A CN 202311530853A CN 117452541 A CN117452541 A CN 117452541A
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- 238000004088 simulation Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000007747 plating Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000011248 coating agent Substances 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 238000002834 transmittance Methods 0.000 claims abstract description 32
- 238000001228 spectrum Methods 0.000 claims abstract description 30
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000003595 spectral effect Effects 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 21
- 229910052736 halogen Inorganic materials 0.000 claims description 21
- 150000002367 halogens Chemical class 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 19
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 229910001507 metal halide Inorganic materials 0.000 abstract description 9
- 150000005309 metal halides Chemical class 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 2
- 229910052724 xenon Inorganic materials 0.000 description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S8/00—Lighting devices intended for fixed installation
- F21S8/006—Solar simulators, e.g. for testing photovoltaic panels
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/02—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for simulating daylight
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The application discloses an A+ level solar simulation filter for photovoltaic and a plating method thereof, relating to the field of optical filters, wherein the filter comprises a substrate material; a film layer is arranged on the substrate material; the film layer is formed by alternately stacking high-low refractive index materials, and has a film system structure (LH) 3 The method comprises the steps of carrying out a first treatment on the surface of the Spectral transmittance of the optical filter in a wave band of 300-1200 nm: the average transmittance of the wave band of 300-470 nm is 34% +/-3%; the average transmittance of 470-561 nm wave band is 44% +/-3%; the average transmittance of 561-657 nm wave band is 54% +/-3%; the average transmittance of 657-772 nm wave band is 79% +/-3%; the average transmittance of 772-919 nm wave band is 93% +/-2%; the average transmittance of 919-1200 nm wave band is 90% +/-3%. The preparation method comprises the following steps: and evaporating the coating material by adopting an electron gun heating mode. The metal halide is used as a solar simulation light source, and achieves the A-level standard of AM 1.5 spectrum A+ and AM 0 spectrum A.
Description
Technical Field
The invention belongs to the field of optical filters, and particularly relates to an A+ level solar simulation filter for a photovoltaic device and a plating method thereof.
Background
The solar simulator is a common device for simulating standard sunlight irradiation, and generally comprises a light source, a power supply and control circuit, a computer and other components. When power measurement is involved, the solar simulator generally reaches the A+ level or above.
Commonly used light sources generally include xenon light sources, LED light sources, and metal halide light sources. The light emission characteristics of xenon lamp light sources are very close to the solar spectrum and are therefore widely used. However, the xenon lamp light source has serious power consumption, the xenon lamp filter has 30% of light flux loss, the array phenanthrene light transmission flux loss is 40%, the power consumption is more than twice of that of a metal halogen lamp, and the purchase and use costs are high; and the xenon lamp light source laboratory occupies a large area, and requires 8m long optical path during use, the environment is constant temperature, cooling water is used, and the test conditions are harsh. The LED light source needs LED lamp beads with various spectral bands or wavelengths to be spliced, and the spectrum is discontinuous and is mainly used for bias light analysis and measurement. The metal halogen lamp is also a common gas discharge lamp and is characterized by high luminous efficiency and high power. The irradiance of the metal halogen lamp can reach 200000lm compared with the xenon lamp with the same power of 2KW, which is 2 times of the xenon lamp. When testing large area panels or elevated irradiation intensity tests, a metal halide light source is a suitable light source.
As the difference of the luminous spectrum line of the metal halogen lamp is larger than that of sunlight, the metal halogen lamp can meet the use standard after being filtered by the optical filter. The design of the optical filter requires filtering of different wave bands, which is close to the proportion of sunlight. Compared with a solar simulation filter of a xenon lamp light source, the design of the filter for simulating sunlight of the metal halide lamp light source is more difficult, and the grade of the metal halide lamp light source is caused to stay in the class B before being stopped.
The Chinese patent publication No. CN112305655A discloses a solar simulation filter, namely a B-stage solar simulation filter for photovoltaics and a plating method thereof, but the prepared filter has the matching degree reaching the B-stage standard only and is difficult to solve the problems that the spectrum drift of a metal halogen lamp along with the service life and the multi-stage filtering are mutually interfered.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides an A+ level solar simulation filter for photovoltaics and a plating method thereof in order to provide a metal halogen lamp which can replace a traditional xenon lamp to be used as a solar simulation light source to reach A level and above standard.
In a first aspect, the application provides an a+ level solar simulation filter for photovoltaic use, which adopts the following technical scheme:
the A+ level solar simulation filter for the photovoltaic comprises a substrate material, wherein a film layer is arranged on the substrate material; the film layer is formed by alternately stacking high-low refractive index materials, and has a film system structure (LH) 3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein L is a low refractive index material and H is a high refractive index material;
spectral transmittance of the optical filter in the wave band of 300-1200 nm meets the following requirements:
the average transmittance of the wave band of 300-470 nm is 34% +/-3%;
the average transmittance of 470-561 nm wave band is 44% +/-3%;
the average transmittance of 561-657 nm wave band is 54% +/-3%;
the average transmittance of 657-772 nm wave band is 79% +/-3%;
the average transmittance of 772-919 nm wave band is 93% +/-2%;
the average transmittance of 919-1200 nm wave band is 90% +/-3%.
Through the technical scheme: the technical difficulty of the B-stage refractory of the halogen lamp light source grade is that the spectrum drift of the lamp along with the service life and the multi-section filtering interfere with each other and the like, and the halogen lamp light source grade is formed by stacking materials with high and low refractive index (LH) 3 Is of a film structure to obtainThe spectral transmittance of the 300-1200 nm wave band accords with the standard regulation, namely the energy ratio of the ClassA+ definition 6 section spectrum is within +/-12.5% of the standard value.
As a preferable scheme, the film layer is formed by alternately stacking H materials and L materials, and the substrate material adopts B270 high borosilicate glass; the H material adopts Ti 3 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The L material adopts SiO 2 。
Through the technical scheme: compared with quartz glass substrates, the spectrum is nearly 100% full-transparent, and the B270 high borate glass is subjected to some correction/treatment on the short wave spectrum by the substrate and is not full-transparent. Ti (Ti) 3 O 5 With SiO 2 Alternately stacking, and adjusting the transmissivity of the optical filter to make the optical filter suitable for the metal halogen lamp light source. The spectrum of the metal halogen lamp can change greatly along with the use time, so that the drift trend of the spectrum must be considered when designing the filter, ti is used 3 O 5 With SiO 2 The alternately stacked film layers are sensitive to the environment and can change along with the change of the metal halide light source, so that the cheap trend of the optical filter is adapted to the change of the metal halide light source, and the obtained result is stable and meets the ClsaaA+ standard.
As a preferred embodiment, the film thickness profile is as follows:
the first layer of coating material adopts SiO 2 Thickness 23.40nm + -1 nm;
the second layer of coating material adopts Ti 3 O 5 28.8nm plus or minus 1nm thick;
the third layer of coating material adopts SiO 2 A thickness of 108.30nm + -1 nm;
the fourth layer of coating material adopts Ti 3 O 5 Thickness 63.87 nm.+ -. 1nm;
the fifth layer coating material adopts SiO 2 Thickness 98.61 nm.+ -. 1nm;
the sixth layer of coating material adopts Ti 3 O 5 The thickness is 27.564nm plus or minus 1nm.
Through the technical scheme: the transmittance of the optical filter is regulated by regulating the thickness of each layer of coating material, so that the optical filter can change by using a metal halogen lamp light source, the correction result is facilitated, and the experimental result reaches the ClassA+ standard.
As a preferred embodiment, the film thickness profile is as follows:
the first layer of coating material adopts SiO 2 Thickness 23.40nm;
the second layer of coating material adopts Ti 3 O 5 Thickness 28.8nm;
the third layer of coating material adopts SiO 2 A thickness of 108.30nm;
the fourth layer of coating material adopts Ti 3 O 5 Thickness 63.87nm;
the fifth layer coating material adopts SiO 2 Thickness 98.61nm;
the sixth layer of coating material adopts Ti 3 O 5 And a thickness of 27.564nm.
As a preferable scheme, when the metal halogen lamp light source is used, the output spectrum matching degree value of each wave band of 300-1200 nm is 0.875-1.125.
Through the technical scheme: the matching degree reaches the standard above A+ level, namely, the six-section spectrum energy ratio is within +/-12.5% of the standard value.
In a second aspect, the plating method of the a+ level solar simulation filter for photovoltaic uses the following technical scheme:
a plating method of A+ level solar simulation filter for photovoltaic uses the heating mode of electron gun to evaporate the coating material; the thickness error of the film layer is less than 1%; vacuum degree reaches 3X 10 -3 Pa。
Through the technical scheme: the obtained film layer is stable and has good film forming effect.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the optical filter filters different wave bands and is close to the proportion of sunlight, so that the metal halogen lamp can replace the traditional xenon lamp to be used as a solar simulation light source.
2. According to the relative spectral intensity distribution of the metal halogen lamp light source, the optical filter enables the light passing through the optical filter to approach the standard solar spectrum. By comparing the standard solar spectrum with the metal halogen lamp spectrum, the transmittance is corresponding to different wavelength positions within the range of 300-1200 nm. The spectral filter with the filtering characteristic has the spectral matching coefficients of different wave bands of 300-1200 nm between 0.875-1.125, and the matching degree reaches the standard above A+ level, namely the energy ratio of six-segment spectrum is within +/-12.5% of the standard value.
Drawings
FIG. 1 is a spectrum design diagram of an A+ class filter of a metal halide lamp according to the present application.
FIG. 2 is a graph of the rating results of the filters of the present application when used in a 300-1200 nm scene.
FIG. 3 is a graph of the rating results of the filters of the present application when used in a 400-1100 nm scene.
FIG. 4 is a graph of the rating results of the filters of the present application when used in a 350-1800 nm scene.
Detailed Description
The invention will be further described with reference to figures 1-4 and examples.
Example 1
The A+ level solar simulation filter for the photovoltaic comprises a substrate material, wherein the substrate material is prepared from B270 high borosilicate glass, and the thickness of the substrate material is 2mm. The substrate material is provided with a film layer which is made of SiO 2 And Ti is 3 O 5 Alternately stacked, and has a membrane system structure (LH) 3 L is a low refractive index material, H is a high refractive index material, in this embodiment, the H material is Ti 3 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The L material adopts SiO 2 The thickness distribution of the film layer is shown in table 1.
TABLE 1 first to sixth coating materials and thickness gauge
| Layer number | Coating material | Thickness (nm) |
| 1 | SiO 2 | 23.40 |
| 2 | Ti 3 O 5 | 28.80 |
| 3 | SiO 2 | 108.30 |
| 4 | Ti 3 O 5 | 63.87 |
| 5 | SiO 2 | 98.61 |
| 6 | Ti 3 O 5 | 27.564 |
The thickness error of the coating material is within 1nm.
Example 2
Evaporating the coating material provided in example 1 by electron gun heating, alternately spraying on the substrate material to form a film layer, and vacuum degree reaching 3×10 -3 Pa; the control error of the film thickness is less than 1%; and curing to obtain the A+ solar simulation filter for the photovoltaic.
Performance test
1. Referring to IEC60904-9:2020, the performance of the filter is obtained by comparing the standard solar spectrum with the metal halide lamp spectrum, and the results are shown in FIG. 1.
Referring to fig. 1, the spectrum of the light filter illustrates the corresponding transmittance of the light filter at different wavelength positions in the range of 300-1200 nm. Spectral transmittance of the optical filter in the wave band of 300-1200 nm is as follows:
the average transmittance of the wave band of 300-470 nm is 34% +/-3%;
the average transmittance of 470-561 nm wave band is 44% +/-3%;
the average transmittance of 561-657 nm wave band is 54% +/-3%;
the average transmittance of 657-772 nm wave band is 79% +/-3%;
the average transmittance of 772-919 nm wave band is 93% +/-2%;
the average transmittance of 919-1200 nm wave band is 90% +/-3%.
The spectral filter with the filtering characteristic has the spectral matching coefficients of different wave bands of 300-1200 nm between 0.875-1.125, and the matching degree reaches the standard above A+ level.
2. The spectrum distribution of the optical filter metal halogen lamp after being matched with the metal halogen lamp is obtained by adopting the methods of IEC61215-2, IEC60904-9 and GB/T6494-2017 and testing the grade obtained by matching the optical filter of the preparation example 2 with the metal halogen lamp. Wherein:
filter characteristics 1:
the spectrum matching degree of the power supply within the adjusting range of 75-100% ensures ClassA+;
the spectrum matching degree of the adjusting range of 60-75% of the power supply power at least ensures ClassA;
the whole service life of the lamp tube at least ensures ClassA, and the ClassA+ is ensured in the half life;
when the filter is designed, the trend of 6 sections of spectrums along with the power adjustment of the power supply and the service life of the lamp tube is calculated, and the positive deviation and the negative deviation are reversely converted.
Filter characteristics 2:
the spectral ranges of the high capacity battery assembly 300-1200 nm, the low capacity battery assembly 400-1100 nm and the GB/T6494-2017 space battery assembly 350-1800 nm are respectively graded according to IEC60904-9:2020, so that the following steps are obtained:
(1) The traditional single crystal and polycrystal batteries have no optical spectrum response to short wave and long wave; heterojunction + perovskite stacked cells increase the spectral response band;
(2) The space battery pays attention to conversion efficiency, and the spectrum absorption band is greatly prolonged;
thus, the following experimental conditions were employed:
different integrals under the same spectrum: 300-1200 nm (heterojunction+perovskite laminated cell assembly), 400-1100 nm (traditional assembly), 350-1800 nm (space cell assembly), and the test results are shown in fig. 2-4. Wherein, FIG. 2 is an IEC60904-9:2020 rating (300-1200 nm) effect diagram, FIG. 3 is an IEC60904-9:2007 rating (400-1100 nm) effect diagram, and FIG. 4 is a GB/T6494-2017 rating (350-1800 nm) effect diagram.
Referring to fig. 2, the filter and the metal halogen lamp are matched, all six sections are less than 5%, and the matching degree reaches the class a+ standard.
Referring to FIG. 3, according to IEC60904-9:2007 rating (400-1100 nm) results, all six segments <25%, matching degree reaches ClassA standard.
Referring to FIG. 4, according to GB/T6494-2017 rating (350-1800 nm) results, 10 segments all <25%, matching degree reaches ClassA standard.
The foregoing are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in any way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (6)
1. The A+ level solar simulation filter for the photovoltaic comprises a substrate material, and is characterized in that a film layer is arranged on the substrate material; the film layer is formed by alternately stacking high-low refractive index materials, and has a film system structure (LH) 3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein L is a low refractive index material and H is a high refractive index material;
spectral transmittance of the optical filter in the wave band of 300-1200 nm meets the following requirements:
the average transmittance of the wave band of 300-470 nm is 34% +/-3%;
the average transmittance of 470-561 nm wave band is 44% +/-3%;
the average transmittance of 561-657 nm wave band is 54% +/-3%;
the average transmittance of 657-772 nm wave band is 79% +/-3%;
the average transmittance of 772-919 nm wave band is 93% +/-2%;
the average transmittance of 919-1200 nm wave band is 90% +/-3%.
2. The a+ stage solar simulation filter for photovoltaic use according to claim 1, wherein: the substrate material adopts B270 high borosilicate glass; the H material adopts Ti 3 O 5 The method comprises the steps of carrying out a first treatment on the surface of the The L material adopts SiO 2 。
3. The B-stage solar simulation filter for a photovoltaic according to claim 2, wherein: the film thickness distribution is as follows:
the first layer of coating material adopts SiO 2 Thickness 23.40nm + -1 nm;
the second layer of coating material adopts Ti 3 O 5 28.8nm plus or minus 1nm thick;
the third layer of coating material adopts SiO 2 A thickness of 108.30nm + -1 nm;
the fourth layer of coating material adopts Ti 3 O 5 Thickness 63.87 nm.+ -. 1nm;
the fifth layer coating material adopts SiO 2 Thickness 98.61 nm.+ -. 1nm;
the sixth layer of coating material adopts Ti 3 O 5 The thickness is 27.564nm plus or minus 1nm.
4. The B-stage solar simulation filter for a photovoltaic according to claim 2, wherein: the film thickness distribution is as follows:
the first layer of coating material adopts SiO 2 Thickness 23.40nm;
the second layer of coating material adopts Ti 3 O 5 Thickness 28.8nm;
the third layer of coating material adopts SiO 2 A thickness of 108.30nm;
the fourth layer of coating material adopts Ti 3 O 5 Thickness 63.87nm;
the fifth layer coating material adopts SiO 2 Thickness 98.61nm;
sixth layerThe coating material adopts Ti 3 O 5 And a thickness of 27.564nm.
5. The a+ solar simulation filter for photovoltaic use according to claim 4, wherein: when the metal halogen lamp light source is used, the output spectrum matching degree value of each wave band of 300-1200 nm is 0.875-1.125.
6. A method for plating an a+ solar simulation filter for a photovoltaic cell according to any one of claims 1 to 5, wherein: evaporating the coating material by adopting an electron gun heating mode; the thickness error of the film layer is less than 1%; vacuum degree reaches 3X 10 -3 Pa。
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| CN202311530853.1A CN117452541B (en) | 2023-11-16 | 2023-11-16 | A+ level solar simulation filter for photovoltaic and plating method thereof |
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| FR1541591A (en) * | 1966-10-24 | 1968-10-04 | Du Pont | Light-sensitive, direct-write, light-developable silver halide emulsion layers Photographic elements comprising such layers and photographic processes using them |
| JP2011186320A (en) * | 2010-03-10 | 2011-09-22 | Iwasaki Electric Co Ltd | Method of manufacturing optical deposition film filter, and light source unit for solar simulator |
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| CN105610401A (en) * | 2016-03-18 | 2016-05-25 | 常州天合光能有限公司 | Device and method for simulating light degradation of solar crystal silicon photovoltaic cell piece |
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-
2023
- 2023-11-16 CN CN202311530853.1A patent/CN117452541B/en active Active
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| CN117452541B (en) | 2024-07-09 |
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