CN117434321A - Probe station puncture correction method and device, probe station and electronic equipment - Google Patents
Probe station puncture correction method and device, probe station and electronic equipment Download PDFInfo
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- CN117434321A CN117434321A CN202311243051.2A CN202311243051A CN117434321A CN 117434321 A CN117434321 A CN 117434321A CN 202311243051 A CN202311243051 A CN 202311243051A CN 117434321 A CN117434321 A CN 117434321A
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- 238000012937 correction Methods 0.000 title claims abstract description 165
- 239000000523 sample Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000003780 insertion Methods 0.000 claims abstract description 75
- 230000037431 insertion Effects 0.000 claims abstract description 75
- 230000033001 locomotion Effects 0.000 claims abstract description 64
- 238000006073 displacement reaction Methods 0.000 claims description 35
- 238000004458 analytical method Methods 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 8
- 238000004590 computer program Methods 0.000 claims description 8
- 238000004080 punching Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 239000011295 pitch Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000012797 qualification Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application relates to a probe station needle insertion correction method and device, a probe station and electronic equipment. The method comprises the following steps: operating a motor to drive a wafer to perform axial equal-step motion, and acquiring a first image of a needle mark obtained by needle insertion of the wafer on the probe station; judging whether the needle mark is linearly deviated or not based on the first image; if yes, determining the linear offset of the needle mark based on the first image, and determining a linear correction value according to the linear offset; performing linear correction on the probe station according to the linear correction value; operating the motor to drive the wafer to perform axial equal-step movement, and obtaining a second image of a needle mark obtained by needle insertion of the wafer on the probe station after linear correction; judging whether the needle mark is angularly offset or not based on the second image; if yes, determining the angle offset of the needle mark based on the second image, and determining an angle correction value according to the angle offset; and performing angle correction on the probe station according to the angle correction value. By adopting the method and the device, the needle insertion error can be reduced, and the needle insertion precision can be improved.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a method and an apparatus for correcting a needle insertion of a probe station, and an electronic device.
Background
Testing is an important link of the semiconductor manufacturing process, and the qualification rate of products can be ensured by screening out unqualified products through testing. The wafer insertion test is a test operation on a wafer, in which a probe card is operated to insert a needle into the wafer, and the needle card is contacted with pads (bonding points) of dies on the wafer to transmit electrical signals.
In the process of needling a wafer, after the probe station performs operations such as cover lifting or transportation due to the comprehensive influence of temperature on a grating ruler, a panel and the like, the same row of grains may have regular linear offset or deflection with a certain angle along the X axis or the Y axis during actual needling, so that needling errors are generated.
Disclosure of Invention
In view of the above, it is necessary to provide a probe station needle insertion correction method, a probe station needle insertion correction device, a probe station, and an electronic apparatus, which can improve needle insertion accuracy.
A probe station needle insertion correction method comprising:
operating a motor to fix the number of grains at intervals to drive the wafer to axially move at equal steps to acquire a first image of a needle mark obtained by needle insertion of the wafer on the probe station;
judging whether the needle mark is linearly deviated or not based on the first image;
If linear offset occurs, determining the linear offset of the needle mark based on the first image, and determining a linear correction value according to the linear offset;
performing linear correction on the probe station according to the linear correction value;
operating a motor to fix the number of grains at intervals to drive the wafer to perform axial equal-step motion, and obtaining a second image of a needle mark obtained by needle insertion of the wafer on the probe station after linear correction;
judging whether the needle mark is angularly offset or not based on the second image;
if the angle deviation occurs, determining the angle deviation amount of the needle mark based on the second image, and determining an angle correction value according to the angle deviation amount;
and carrying out angle correction on the probe station according to the angle correction value.
A probe station needle insertion correction device comprising:
the first image acquisition module is used for operating the motor to drive the wafer to perform axial equal-step motion at intervals of fixed grain number so as to acquire a first image of a needle mark obtained by needle insertion of the wafer on the probe station;
the linear offset analysis module is used for judging whether the needle mark is linearly offset or not based on the first image;
the linear correction calculation module is used for determining the linear offset of the needle mark based on the first image when linear offset occurs, and determining a linear correction value according to the linear offset;
The linear correction module is used for carrying out linear correction on the probe station according to the linear correction value;
the second image acquisition module is used for operating the motor to drive the wafer to perform axial equal-step motion at intervals of fixed grain number so as to acquire a second image of a needle mark obtained by needle insertion of the wafer on the probe station after linear correction;
the angle deviation analysis module is used for judging whether the needle mark is subjected to angle deviation or not based on the second image;
the angle correction calculation module is used for determining the angle offset of the needle mark based on the second image when the angle offset occurs, and determining an angle correction value according to the angle offset;
and the angle correction module is used for carrying out angle correction on the probe station according to the angle correction value.
A probe station for performing a puncture correction by using the probe station puncture correction method.
An electronic device comprising a memory storing a computer program and a processor that when executing the computer program performs the steps of:
operating a motor to fix the number of grains at intervals to drive the wafer to axially move at equal steps to acquire a first image of a needle mark obtained by needle insertion of the wafer on the probe station;
Judging whether the needle mark is linearly deviated or not based on the first image;
if linear offset occurs, determining the linear offset of the needle mark based on the first image, and determining a linear correction value according to the linear offset;
performing linear correction on the probe station according to the linear correction value;
operating a motor to fix the number of grains at intervals to drive the wafer to perform axial equal-step motion, and obtaining a second image of a needle mark obtained by needle insertion of the wafer on the probe station after linear correction;
judging whether the needle mark is angularly offset or not based on the second image;
if the angle deviation occurs, determining the angle deviation amount of the needle mark based on the second image, and determining an angle correction value according to the angle deviation amount;
and carrying out angle correction on the probe station according to the angle correction value.
According to the probe station needle insertion correction method, the probe station needle insertion correction device, the probe station and the electronic equipment, the first image of the needle mark obtained by the wafer needle insertion on the probe station is analyzed, when the needle mark is linearly deviated, the linear deviation amount of the needle mark is determined based on the first image, the linear correction value is determined according to the linear deviation amount, and the probe station is linearly corrected according to the linear correction value, so that deviation of the actual needle insertion in the linear direction is reduced; after the linear correction, analyzing a second image of the needle mark obtained by the wafer needle insertion on the probe station, so that whether the needle mark is angularly offset or not can be accurately analyzed; when the needle mark is angularly offset, the angle offset of the needle mark is determined based on the second image, the angle correction value is determined according to the angle offset, and the angle correction is carried out on the probe station according to the angle correction value, so that the angle offset of the actual needle insertion is reduced, the needle mark offset generated in the actual needle insertion process can be reduced, the needle insertion error is reduced, and the needle insertion precision is improved.
Drawings
In order to more clearly illustrate the technical solutions of embodiments or conventional techniques of the present application, the drawings required for the descriptions of the embodiments or conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a flow chart of a method for probe station needle insertion correction in one embodiment;
FIG. 2 (a) is a needle mark image of X-axis linear offset generated by needle insertion during the process of driving a wafer to move along the X-axis direction by a motor;
FIG. 2 (b) is a needle mark image of Y-axis linear offset generated by needle insertion during the process of driving a wafer to move along the Y-axis direction by a motor;
FIG. 3 is a diagram of an X-axis and Y-axis orientation map in one embodiment;
FIG. 4 (a) is a schematic diagram showing the linear offset direction of the needle mark being the positive X-axis direction when the motor drives the wafer to move in the positive X-axis direction;
FIG. 4 (b) is a schematic diagram showing the linear offset direction of the needle mark being the negative X-axis direction when the motor drives the wafer to move in the positive X-axis direction;
FIG. 5 (a) is a schematic diagram showing the linear offset direction of the needle mark being the positive Y-axis direction when the motor drives the wafer to move in the positive Y-axis direction;
FIG. 5 (b) is a schematic diagram showing the linear offset direction of the needle mark being the negative Y-axis direction when the motor drives the wafer to move in the positive Y-axis direction;
FIG. 6 (a) is a needle mark image of an X-axis angular offset generated by needle insertion when a motor drives a wafer to move along the X-axis;
FIG. 6 (b) is a needle mark image of the Y-axis angular offset generated by needle insertion when the motor drives the wafer to move along the Y-axis;
FIG. 7 (a) is a schematic diagram showing the offset direction of the needle mark being the negative Y-axis direction when the motor drives the wafer to move in the positive X-axis direction;
FIG. 7 (b) is a schematic diagram showing the offset direction of the needle mark being the positive Y-axis direction when the motor drives the wafer to move in the positive X-axis direction;
FIG. 8 (a) is a schematic diagram showing the offset direction of the needle mark being the positive X-axis direction when the motor drives the wafer to move in the positive Y-axis direction;
FIG. 8 (b) is a schematic diagram showing the offset direction of the needle mark being the negative X-axis direction when the motor drives the wafer to move in the positive Y-axis direction;
fig. 9 is a block diagram showing the structure of a probe station puncture correction device according to an embodiment.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Examples of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that the terms "first," "second," and the like, as used herein, may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or be connected to the other element through intervening elements. Further, "connection" in the following embodiments should be understood as "electrical connection", "communication connection", and the like if there is transmission of electrical signals or data between objects to be connected.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," and/or the like, specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof. Also, the term "and/or" as used in this specification includes any and all combinations of the associated listed items.
In one embodiment, a method for correcting needle insertion of a probe station is provided, and the method can be applied to electronic equipment, wherein the electronic equipment can be a terminal connected with the probe station, such as a computer, a palm computer, a microprocessor and the like, and can be used as an upper computer of the probe station. Taking an application to an electronic device as an example, referring to fig. 1, the method includes the following steps S110 to S180.
S110: the operation motor drives the wafer to perform axial equal-step motion at intervals by fixing the number of crystal grains, and a first image of a needle mark obtained by needle insertion of the wafer on the probe station is obtained.
Preparing a clean and complete wafer, and placing the wafer on a chuck of a probe station; the motor of the probe station comprises an X-axis motor and a Y-axis motor, and the motor can drive the chuck for loading the wafer to move so as to drive the wafer to move. The electronic equipment performs axial equal-step movement by controlling the motor with the fixed grain number as an interval, so as to drive the wafer to perform axial equal-step movement; in the moving process, the wafer is needled by using the needle card of the probe station, and an image of the needle mark is shot by the image acquisition device.
Wherein the axial equal-step movement comprises equal-step movement along the X-axis direction and equal-step movement along the Y-axis direction; the first image may include a first image of a needle mark obtained by needle insertion of the wafer on the probe station when the motor drives the wafer to move along the X-axis direction at equal pitches, and/or a first image of a needle mark obtained by needle insertion of the wafer on the probe station when the motor drives the wafer to move along the Y-axis direction at equal pitches.
S120: based on the first image, it is determined whether the needle mark is linearly shifted.
Linear offset refers to an offset that occurs in the direction of the axis of motion of the wafer, including an X-axis linear offset and/or a Y-axis linear offset; the X-axis linear displacement refers to displacement of the needle mark in the X-axis direction when the direction of the movement axis of the wafer is movement in the X-axis direction, and the Y-axis linear displacement refers to displacement of the needle mark in the Y-axis direction when the direction of the movement axis of the wafer is movement in the Y-axis direction.
S130: if the linear offset occurs, the linear offset of the needle mark is determined based on the first image, and a linear correction value is determined based on the linear offset.
If the X-axis linear offset occurs, the linear offset of the needle mark is determined based on a first image obtained by the motor and the wafer in the equal step motion along the X-axis direction, and a linear correction value for correcting the X-axis linear offset is determined according to the linear offset. If Y-axis linear offset occurs, determining the linear offset of the needle mark based on a first image obtained by the motor and the wafer in the Y-axis direction at equal steps, and determining a linear correction value for correcting the Y-axis linear offset according to the linear offset.
S140: and carrying out linear correction on the probe station according to the linear correction value.
Specifically, the motor position of the probe station can be adjusted according to the linear correction value to perform linear correction, thereby reducing linear offset. For example, in the case where the X-axis linear offset occurs, the X-axis motor position is adjusted to perform correction based on the linear correction value for correcting the X-axis linear offset; in the case where the Y-axis linear displacement occurs, the Y-axis motor position is adjusted to perform correction based on the linear correction value for correcting the Y-axis linear displacement.
S150: and operating the motor to drive the wafer to perform axial equal-step motion at intervals by fixing the number of grains, and obtaining a second image of the needle mark obtained by needle insertion of the wafer on the probe station after the linear correction.
After the linear correction, the motor is controlled again to drive the wafer to move axially at equal steps, the needle card of the probe station is operated to puncture the wafer, and the image of the needle mark is shot through the image acquisition device, so that a second image is obtained. The second image may include a second image of a needle mark obtained by needle insertion of the wafer on the linear correction post-probe stage when the motor drives the wafer to move along the equal pitch in the X-axis direction, and/or a second image of a needle mark obtained by needle insertion of the wafer on the linear correction post-probe stage when the motor drives the wafer to move along the equal pitch in the Y-axis direction.
S160: based on the second image, whether the needle mark is angularly offset is judged.
Angular offset refers to an offset that occurs in a direction that is offset from the axis of motion of the wafer, including an X-axis angular offset and/or a Y-axis angular offset; the X-axis angular deviation refers to the deviation of the needle mark in the Y-axis direction when the direction of the movement axis of the wafer moves along the X-axis direction, and the Y-axis angular deviation refers to the deviation of the needle mark in the X-axis direction when the direction of the movement axis of the wafer moves along the Y-axis direction. Specifically, based on a second image obtained by the motor and the wafer in the equal-step motion along the X-axis direction, whether the needle mark is subjected to the X-axis angular offset is judged, and based on a second image obtained by the motor and the wafer in the equal-step motion along the Y-axis direction, whether the needle mark is subjected to the Y-axis angular offset is judged.
S170: if the angle deviation occurs, the angle deviation amount of the needle mark is determined based on the second image, and an angle correction value is determined according to the angle deviation amount.
If the X-axis angle offset occurs, determining the angle offset of the needle mark based on a second image obtained by the motor and the wafer in the equal-step motion along the X-axis direction, and determining an angle correction value for correcting the X-axis angle offset according to the angle offset. If Y-axis angle deviation occurs, determining the angle deviation amount of the needle mark based on a second image obtained by the motor and the wafer in the equal-step motion along the Y-axis direction, and determining an angle correction value for correcting the Y-axis angle deviation according to the angle deviation amount.
S180: and performing angle correction on the probe station according to the angle correction value.
Specifically, the motor position of the probe station can be adjusted according to the angle correction value to perform angle correction, thereby reducing the angle offset.
According to the probe station puncture correction method, the first image of the needle mark obtained by the wafer puncture on the probe station is analyzed, when the needle mark is linearly deflected, the linear deflection of the needle mark is determined based on the first image, the linear correction value is determined according to the linear deflection, and the probe station is linearly corrected according to the linear correction value, so that the deflection of the actual puncture in the linear direction is reduced; after the linear correction, analyzing a second image of the needle mark obtained by the wafer needle insertion on the probe station, so that whether the needle mark is angularly offset or not can be accurately analyzed; when the needle mark is angularly offset, the angle offset of the needle mark is determined based on the second image, the angle correction value is determined according to the angle offset, and the angle correction is carried out on the probe station according to the angle correction value, so that the angle offset of the actual needle insertion is reduced, the needle mark offset generated in the actual needle insertion process can be reduced, the needle insertion error is reduced, and the needle insertion precision is improved.
In one embodiment, step S110 further includes: the XY axes of the probe stage are orthogonally compensated.
Specifically, the step of orthogonally compensating the XY axis of the probe station may include: selecting at least 2 points along the Y-axis direction/X-axis direction from the wafer on the probe station, and fitting the calibrated points into a straight line; selecting two coordinate points on the generated straight line, and calculating the angles of the straight line and the X-axis direction/Y-axis direction according to the coordinates of the coordinate points; and calculating a difference between the angle and 90 degrees, and correcting the XY axis angle of the probe station according to the difference.
For example, a clean and perfect wafer is selected and leveling of the wafer is completed, x coordinate points along the Y direction are selected in the wafer, and a straight line is fitted according to the x points. Two coordinates (X1, y 1) and (X2, y 2) are selected on the generated straight line, and then the angle between the straight line and the X axis direction is beta: β=arctan ((y 2-y 1)/(x 2-x 1)). And calculating the difference between the angle beta and 90 degrees, and carrying out certain angle compensation correction according to the difference, thereby completing the cross quadrature compensation of the XY axis. By performing the XY axis angle correction by the quadrature compensation before step S110, the problem of insufficient XY axis orthogonality due to long-term use of the probe stage is avoided, and the problem of needle insertion error due to the XY axis angle error is solved.
In one embodiment, step S110 may include step (a 1) and step (a 2).
Step (a 1): the operation motor is used for fixing the grain number at intervals to drive the wafer to move along the X-axis direction at equal steps, and a first image of a needle mark obtained by needle insertion of the wafer moving along the X-axis direction on the probe station is obtained.
Step (a 2): the operation motor is used for fixing the grain number at intervals to drive the wafer to move along the Y-axis direction at equal steps, and a first image of a needle mark obtained by needle insertion of the wafer moving along the Y-axis direction on the probe station is obtained.
In one embodiment, step S120 includes step (b 1) and step (b 2).
Step (b 1): when the motor drives the wafer to move along the X-axis direction, if the needle mark in the first image deviates in the X-axis direction, the needle mark deviates in the X-axis direction.
Step (b 2): when the motor drives the wafer to move along the Y-axis direction, if the needle mark in the first image deviates in the Y-axis direction, the needle mark deviates linearly along the Y-axis.
Specifically, when the motor drives the wafer to move along the X-axis direction, whether the needle mark is offset in the X-axis direction is judged based on a first image obtained by the motor and the wafer moving along the X-axis direction, and if so, the needle mark is offset in the X-axis direction. When the motor drives the wafer to move along the Y-axis direction, whether the needle mark is offset in the Y-axis direction or not is judged based on a first image obtained by the motor and the wafer moving along the Y-axis direction, and if yes, the needle mark is offset in the Y-axis direction. Therefore, whether the X-axis linear offset and the Y-axis linear offset occur or not is analyzed in the movement process of the X-axis and the Y-axis in different directions, and the linear offset condition can be accurately analyzed.
The execution sequence of the step (a 1), the step (a 2), the step (b 1) and the step (b 2) can be set according to actual needs. For example, after step (a 1) and step (b 1) are executed, step S130 and step S140 are executed first, then step (a 1) is executed again, if the linear offset of the X axis still exists in the needle mark, the existing linear correction value is finely adjusted to perform linear correction and then step (a 1), or step S130 and step S140 are executed and then step (a 1) is executed again; if the needle mark does not have the X-axis linear offset in the X-axis direction, executing the step (a 2), the step (b 2), the step S130 and the step S140, and then returning to execute the step (a 2), if the needle mark still has the Y-axis linear offset, fine-adjusting the existing linear correction value to perform linear correction and then returning to the step (a 2), or executing the step S130 and the step S140 and then returning to the step (a 2); if the needle mark does not have the Y-axis linear offset in the Y-axis direction, step S150 is executed. Therefore, the needle mark is circulated for many times to ensure that the needle mark does not have linear offset in the X-axis direction and the Y-axis direction, so that the linear offset in the actual needle inserting process can be eliminated, and the needle inserting precision is improved. It will be appreciated that in other embodiments, steps (a 1), (a 2), step (b 1) and step (b 2) may be performed in other orders, for example, after steps (a 1) and (a 2) are performed, steps (b 1) and (b 2) are performed, respectively.
In one embodiment, in step S130, a linear offset of the needle mark is determined based on the first image, and a linear correction value is determined according to the linear offset, including steps (c 1) to (c 5).
Step (c 1): the radius of the wafer is obtained.
Step (c 2): and selecting a linear offset needle point of the needle mark in the first image, and determining the linear offset of the linear offset needle point in the axial direction relative to the standard of the Pad where the linear offset needle point is positioned.
The reference of the Pad where the linear offset needle point is the edge of the Pad near the center of the wafer chuck. For example, as shown in fig. 2 (a), the motor drives the wafer to puncture the needle to generate an image of the needle mark with an X-axis linear offset in the process of moving along the X-axis direction, as shown in fig. 2 (b), the motor drives the wafer to puncture the needle to generate an image of the needle mark with a Y-axis linear offset in the process of moving along the Y-axis direction, the mark points represent selected linear offset needle points, a is a linear offset, and the value of a is equal to the distance between the linear offset needle points and the standard of the Pad where the linear offset needle points are located in the X-axis direction.
Step (c 3): the sign of the linear offset is determined.
Step (c 4): and determining the distance value from the reference of the Pad where the linear offset needle point is positioned to the center of the wafer chuck.
As shown in fig. 2 (a) and 2 (b), b is a distance value from the reference of the Pad where the linear offset pin is located to the Center of the wafer chuck.
Step (c 5): and calculating a linear correction value according to the linear offset, the distance value and the radius.
In one embodiment, step (c 3) comprises: if the movement direction of the wafer and the offset direction of the needle mark are in the same direction, namely positive directions or negative directions, the linear offset is a negative value; if the direction of displacement of the needle mark is opposite to the direction of movement of the wafer, i.e. the direction of movement of the wafer is positive and the direction of displacement of the needle mark is negative, or the direction of movement of the wafer is negative and the direction of displacement of the needle mark is positive, the linear displacement is positive.
The positive and negative of the movement direction of the wafer can be preset; if the movement direction of the wafer and the displacement direction of the needle mark are in the same direction, the needle mark displacement is excessively large, the needle mark distance is required to be reduced to correct the displacement, and the linear displacement is defined as a negative value at the moment; if the movement direction of the wafer is opposite to the displacement direction of the needle mark, the needle mark displacement is too small, and the needle mark spacing is increased to correct the displacement, and the linear displacement is defined as a positive value. Thus, by analyzing the movement direction of the wafer and the displacement direction of the needle mark, the positive and negative signs of the linear displacement amount can be accurately determined, so that the positive and negative signs of the calculated linear correction value can be determined, and whether the linear compensation required by the linear correction is increased or decreased can be reflected.
For example, as shown in fig. 3, positive and negative directions of the wafer movement are set, the positive direction is right and the negative direction is left in the X-axis direction, the negative direction is upward and the positive direction is downward in the Y-axis direction. When the motor drives the wafer to move along the positive direction of the X-axis direction, if the offset direction of the needle mark is the positive direction of the X-axis, as shown in fig. 4 (a), the linear offset a is less than 0; if the offset direction of the needle mark is the negative X-axis direction, as shown in fig. 4 (b), the linear offset a >0. When the motor drives the wafer to move along the positive direction of the Y-axis direction, if the offset direction of the needle mark is the Y-axis positive direction, as shown in fig. 5 (a), the linear offset a is less than 0; if the offset direction of the needle mark is the negative Y-axis direction, as shown in fig. 5 (b), the linear offset a >0.
In one embodiment, step (c 5) comprises:
value=a×r/1000×b; (equation 1)
Where a is a linear offset, b is a distance Value, r is a radius, and Value is a linear correction Value. The linear correction value can be accurately calculated by adopting the formula 1, and the probe station can be accurately corrected and the linear offset can be compensated based on the linear correction value, so that the needle insertion error is eliminated, and the needle insertion precision is improved.
In one embodiment, step S150 includes step (d 1) and step (d 2).
Step (d 1): and operating the motor to drive the wafer to move along the X-axis direction at equal steps at intervals by fixing the number of grains, and obtaining a second image of the needle mark obtained by needle insertion of the wafer on the probe station after the linear correction.
Step (d 2): and operating the motor to drive the wafer to move along the Y-axis direction at equal steps at intervals by fixing the number of grains, and obtaining a second image of the needle mark obtained by needle insertion of the wafer on the probe station after the linear correction.
In one embodiment, step S160 includes step (e 1) and step (e 2).
Step (e 1): when the motor drives the wafer to move along the X-axis direction, if the needle mark in the second image deviates in the Y-axis direction, the needle mark deviates in the X-axis angle.
Step (e 2): when the motor drives the wafer to move along the Y-axis direction, if the needle mark in the second image deviates in the X-axis direction, the needle mark deviates in the Y-axis angle.
Specifically, based on a second image obtained by the motor and the wafer moving along the X-axis direction, judging whether the needle mark is offset in the Y-axis direction, if so, the needle mark is offset in the X-axis angle; and judging whether the needle mark is offset in the X-axis direction or not based on a second image obtained by the motor and the wafer moving along the Y-axis direction, and if so, generating Y-axis angle offset on the needle mark. Therefore, whether the X-axis angular deviation and the Y-axis angular deviation occur or not is analyzed in the movement process of the X-axis and the Y-axis in different directions, and the condition of the angular deviation can be accurately analyzed.
The execution sequence of the step (d 1), the step (d 2), the step (e 1) and the step (e 2) can be set according to actual needs. For example, after step (d 1) and step (e 1) are executed, step S170 and step S180 are executed first, then step (d 1) is executed again, if the needle mark still has the X-axis angle offset, the existing angle correction value is finely adjusted to perform angle correction and then step (d 1) is executed again, or step S170 and step S180 are executed again and then step (d 1) is executed again; if the needle mark has no X-axis angle offset, executing the steps (d 2), e2, S170 and S180, and then returning to execute the step (d 2), if the needle mark still has Y-axis angle offset, finely adjusting the existing angle correction value to perform angle correction and returning to the step (d 2), or executing the steps S170 and S180 and returning to the step (d 2) until the needle mark has no Y-axis angle offset. Therefore, the needle mark is circulated for a plurality of times to ensure that the X-axis angle offset and the Y-axis angle offset do not exist, the angle offset in the actual needle inserting process can be eliminated, and the needle inserting precision is improved. It will be appreciated that in other embodiments, steps (d 1), (d 2), step (e 1) and step (e 2) may be performed in other orders, for example, after steps (d 1) and (d 2) are performed, steps (e 1) and (e 2) are performed, respectively.
In one embodiment, in step S170, an angular offset of the needle mark is determined based on the second image, and an angle correction value is determined according to the angular offset, including steps (f 1) to (f 4).
Step (f 1): a fiducial pin point and an angularly offset pin point of the pin trace are selected in the second image.
Step (f 2): a first axial distance value of the reference pin point and the angle offset pin point in the direction of wafer movement and a second axial distance value of the reference pin point and the angle offset pin point in the direction of pin mark offset are determined.
Wherein, the wafer movement direction is perpendicular to the needle mark offset direction; for example, if the motor drives the wafer to move along the X-axis, when the angular displacement of the X-axis occurs, the displacement direction of the needle mark is the Y-axis direction; if the motor drives the wafer to move along the Y axis, when the Y axis angle deviation occurs, the needle mark deviation direction is the X axis direction. And measuring the distance between the reference needle point and the angle offset needle point in the movement direction of the wafer to obtain a first axial distance value, and measuring the distance between the reference needle point and the angle offset needle point in the needle mark offset direction to obtain a second axial distance value.
Step (f 3): the sign of the second axial distance value is determined.
Step (f 4): an angle correction value is calculated based on the first axial distance value and the second axial distance value.
For example, the motor drives the wafer to puncture to generate an X-axis angular offset needle mark image when moving along the X-axis as shown in fig. 6 (a), the motor drives the wafer to puncture to generate a Y-axis angular offset needle mark image when moving along the Y-axis as shown in fig. 6 (b), d is a first axial distance value, and c is a second axial distance value; the angle correction value can be calculated from c and d.
In one embodiment, step (f 3) comprises: when the needle mark is subjected to X-axis angular deviation, if the movement direction of the wafer and the deviation direction of the needle mark are both positive directions or both negative directions, the angular deviation is a positive value; if the movement direction of the wafer is positive and the displacement direction of the needle mark is negative, or if the movement direction of the wafer is negative and the displacement direction of the needle mark is positive, the angle displacement is negative. When the needle mark is subjected to Y-axis angular deviation, if the movement direction of the wafer and the deviation direction of the needle mark are both positive directions or both negative directions, the angular deviation is a negative value; if the movement direction of the wafer is positive and the displacement direction of the needle mark is negative, or if the movement direction of the wafer is negative and the displacement direction of the needle mark is positive, the angle displacement is positive.
The positive and negative signs of the second axial distance value can be accurately determined by analyzing the movement direction of the wafer and the offset direction of the needle mark, so that the positive and negative signs of the calculated angle correction value can be obtained, and whether the angle compensation required by the angle correction is increased or decreased is reflected.
For example, the positive and negative settings of the wafer movement direction are shown in fig. 3. When the motor drives the wafer to move along the positive direction of the X-axis direction, if the offset direction of the needle mark is the negative direction of the Y-axis, as shown in fig. 7 (a), the second axial distance value c <0 is a negative value; if the direction of displacement of the needle mark is the Y-axis positive direction, as shown in fig. 7 (b), the second axial distance value c >0 is a positive value. When the motor drives the wafer to move along the positive direction of the Y-axis direction, if the offset direction of the needle mark is the positive direction of the X-axis, as shown in fig. 8 (a), the second axial distance value c <0 is a negative value; if the offset direction of the needle mark is the negative X-axis direction, as shown in fig. 8 (b), the second axial distance c >0 is a positive value.
In one embodiment, step (f 4) comprises:
s=arctan (c/d); (equation 2)
Where c is a second axial distance value, d is a first axial distance value, and S is an angle correction value. The angle correction value can be accurately calculated by adopting the formula 2, and the probe station can be accurately corrected and the angle offset can be compensated based on the angle correction value, so that the needle insertion error is eliminated, and the needle insertion precision is improved.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in fig. 1 may include a plurality of steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily sequential, but may be performed in rotation or alternatively with at least a portion of the steps or stages in other steps or other steps.
In one embodiment, as shown in fig. 9, a probe station needle insertion correction apparatus is provided, including a first image acquisition module 910, a linear offset analysis module 920, a linear correction calculation module 930, a linear correction module 940, a second image acquisition module 950, an angular offset analysis module 960, an angular correction calculation module 970, and an angular correction module 980.
The first image acquisition module 910 is configured to operate the motor to drive the wafer to perform an axial equal-step motion at a fixed die number interval, and acquire a first image of a needle mark obtained by needle insertion of the wafer on the probe station.
The linear offset analysis module 920 is configured to determine whether the needle mark is linearly offset based on the first image.
The linear correction calculation module 930 is configured to determine, when the linear offset occurs, a linear offset of the needle mark based on the first image, and determine a linear correction value according to the linear offset.
The linear correction module 940 is configured to perform linear correction on the probe station according to the linear correction value.
The second image acquisition module 950 is configured to operate the motor to drive the wafer to perform an axial equal-step motion at a fixed die number interval, and acquire a second image of a needle mark obtained by needle insertion of the wafer on the probe station after the linear correction.
The angular offset analysis module 960 is configured to determine whether the needle mark is angularly offset based on the second image.
The angle correction calculation module 970 is configured to determine an angle offset of the needle mark based on the second image when the angle offset occurs, and determine an angle correction value according to the angle offset.
The angle correction module 980 is used for performing angle correction on the probe station according to the angle correction value.
According to the probe station puncture correction device, the first image of the needle mark obtained by the wafer puncture on the probe station is analyzed, when the needle mark is linearly deflected, the linear deflection of the needle mark is determined based on the first image, the linear correction value is determined according to the linear deflection, and the probe station is linearly corrected according to the linear correction value, so that the deflection of the actual puncture in the linear direction is reduced; after the linear correction, analyzing a second image of the needle mark obtained by the wafer needle insertion on the probe station, so that whether the needle mark is angularly offset or not can be accurately analyzed; when the needle mark is angularly offset, the angle offset of the needle mark is determined based on the second image, the angle correction value is determined according to the angle offset, and the angle correction is carried out on the probe station according to the angle correction value, so that the angle offset of the actual needle insertion is reduced, the needle mark offset generated in the actual needle insertion process can be reduced, the needle insertion error is reduced, and the needle insertion precision is improved.
The specific limitation concerning the probe station puncture correction device can be referred to as limitation concerning the probe station puncture correction method hereinabove, and will not be described in detail herein. The above-described respective modules in the probe station puncture correction device may be implemented in whole or in part by software, hardware, or a combination thereof. The above modules may be embedded in hardware or independent of a processor in the electronic device, or may be stored in software in a memory in the electronic device, so that the processor may call and execute operations corresponding to the above modules. It should be noted that, in the embodiment of the present application, the division of the modules is schematic, which is merely a logic function division, and other division manners may be implemented in actual implementation.
In one embodiment, a probe station is provided that performs a needle insertion correction using the probe station needle insertion correction method of each of the embodiments described above.
The probe station can realize the method for correcting the needle insertion of the probe station in each embodiment, and can reduce the needle mark deviation generated in the actual needle insertion process and the needle insertion error in the same way, thereby improving the needle insertion precision.
In one embodiment, an electronic device is provided that includes a memory having a computer program stored therein and a processor that when executing the computer program performs the steps of the method embodiments described above.
According to the electronic equipment, when the processor executes the computer program stored in the memory, the steps in the method embodiments can be realized, and in the same way, the needle mark offset generated in the actual needle inserting process can be reduced, the needle inserting error is reduced, and the needle inserting precision is improved.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like.
In the description of the present specification, reference to the terms "some embodiments," "other embodiments," "desired embodiments," and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (13)
1. A probe station needle insertion correction method, comprising:
operating a motor to fix the number of grains at intervals to drive the wafer to axially move at equal steps to acquire a first image of a needle mark obtained by needle insertion of the wafer on the probe station;
judging whether the needle mark is linearly deviated or not based on the first image;
if linear offset occurs, determining the linear offset of the needle mark based on the first image, and determining a linear correction value according to the linear offset;
performing linear correction on the probe station according to the linear correction value;
operating a motor to fix the number of grains at intervals to drive the wafer to perform axial equal-step motion, and obtaining a second image of a needle mark obtained by needle insertion of the wafer on the probe station after linear correction;
judging whether the needle mark is angularly offset or not based on the second image;
if the angle deviation occurs, determining the angle deviation amount of the needle mark based on the second image, and determining an angle correction value according to the angle deviation amount;
and carrying out angle correction on the probe station according to the angle correction value.
2. The method of claim 1, wherein determining whether the needle mark is linearly offset based on the first image comprises:
When the motor drives the wafer to move along the X-axis direction, if the needle mark in the first image deviates in the X-axis direction, the needle mark deviates in the X-axis direction;
when the motor drives the wafer to move along the Y-axis direction, if the needle mark in the first image deviates in the Y-axis direction, the needle mark deviates in the Y-axis direction.
3. The method of claim 2, wherein the determining a linear offset of the needle mark based on the first image, determining a linear correction value based on the linear offset, comprises:
acquiring the radius of the wafer;
selecting a linear offset needle point of the needle mark in the first image, and determining the linear offset of the linear offset needle point in the axial direction relative to the standard of the Pad where the linear offset needle point is located;
determining the sign of the linear offset;
determining a distance value from a reference of the Pad where the linear offset needle point is located to the center of the wafer chuck;
calculating the linear correction value according to the linear offset, the distance value and the radius;
the reference of the Pad where the linear offset needle point is the edge of the Pad close to the center of the wafer chuck.
4. A method according to claim 3, wherein said determining the sign of said linear offset comprises:
if the movement direction of the wafer and the offset direction of the needle mark are both positive directions or both negative directions, the linear offset is a negative value;
and if the movement direction of the wafer is positive and the displacement direction of the needle mark is negative, or the movement direction of the wafer is negative and the displacement direction of the needle mark is positive, the linear displacement is positive.
5. The method according to claim 3 or 4, wherein said calculating said linear correction value from said linear offset, said distance value and said radius comprises:
Value＝a*r/1000*b；
wherein a is the linear offset, b is the distance Value, r is the radius, and Value is the linear correction Value.
6. The method of claim 1, wherein determining whether the needle mark is angularly offset based on the second image comprises:
when the motor drives the wafer to move along the X-axis direction, if the needle mark in the second image deviates in the Y-axis direction, the needle mark deviates in the X-axis angle;
When the motor drives the wafer to move along the Y-axis direction, if the needle mark in the second image deviates in the X-axis direction, the needle mark deviates in the Y-axis angle.
7. The method of claim 6, wherein the determining an angular offset of the needle mark based on the second image, determining an angle correction value based on the angular offset, comprises:
selecting a reference needle point and an angularly offset needle point of the needle mark in the second image;
determining a first axial distance value of the reference needle point and the angle offset needle point in the wafer movement direction and a second axial distance value of the reference needle point and the angle offset needle point in the needle mark offset direction; the wafer moving direction is perpendicular to the needle mark offset direction;
determining the positive and negative signs of the second axial distance value;
and calculating the angle correction value according to the first axial distance value and the second axial distance value.
8. The method of claim 7, wherein determining the sign of the second axial distance value comprises:
when the needle mark is subjected to X-axis angular deviation, if the movement direction of the wafer and the deviation direction of the needle mark are both positive directions or both negative directions, the angular deviation is a positive value;
If the movement direction of the wafer is positive and the offset direction of the needle mark is negative, or the movement direction of the wafer is negative and the offset direction of the needle mark is positive, the angle offset is negative;
when the needle mark is subjected to Y-axis angular deviation, if the movement direction of the wafer and the deviation direction of the needle mark are both positive directions or both negative directions, the angular deviation is a negative value;
and if the movement direction of the wafer is positive and the displacement direction of the needle mark is negative, or the movement direction of the wafer is negative and the displacement direction of the needle mark is positive, the angle displacement is positive.
9. The method according to claim 7 or 8, wherein said calculating said angle correction value from said first axial distance value and said second axial distance value comprises:
S＝arctan(c/d)；
wherein c is the second axial distance value, d is the first axial distance value, and S is the angle correction value.
10. The method of claim 1, wherein the operating the motor to drive the wafer to perform an axial equal-step motion at a fixed die count interval, and further comprising, prior to obtaining the first image of the needle mark obtained by needle punching the wafer on the probe station:
And carrying out orthogonal compensation on the XY axes of the probe station.
11. A probe station needle insertion correction device, comprising:
the first image acquisition module is used for operating the motor to drive the wafer to perform axial equal-step motion at intervals of fixed grain number so as to acquire a first image of a needle mark obtained by needle insertion of the wafer on the probe station;
the linear offset analysis module is used for judging whether the needle mark is linearly offset or not based on the first image;
the linear correction calculation module is used for determining the linear offset of the needle mark based on the first image when linear offset occurs, and determining a linear correction value according to the linear offset;
the linear correction module is used for carrying out linear correction on the probe station according to the linear correction value;
the second image acquisition module is used for operating the motor to drive the wafer to perform axial equal-step motion at intervals of fixed grain number so as to acquire a second image of a needle mark obtained by needle insertion of the wafer on the probe station after linear correction;
the angle deviation analysis module is used for judging whether the needle mark is subjected to angle deviation or not based on the second image;
the angle correction calculation module is used for determining the angle offset of the needle mark based on the second image when the angle offset occurs, and determining an angle correction value according to the angle offset;
And the angle correction module is used for carrying out angle correction on the probe station according to the angle correction value.
12. A probe station, characterized in that the probe station performs a needle insertion correction by using the probe station needle insertion correction method according to any one of claims 1 to 10.
13. An electronic device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any one of claims 1 to 10 when the computer program is executed.
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| CN202311243051.2A CN117434321A (en) | 2023-09-25 | 2023-09-25 | Probe station puncture correction method and device, probe station and electronic equipment |
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