CN117394142A - GaN-based semiconductor laser chip - Google Patents
GaN-based semiconductor laser chip Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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Abstract
The invention provides a GaN-based semiconductor laser chip, which has a conduction band effective state density gradient, a separation energy gradient, a polarized optical phonon energy gradient and a peak rate electric field gradient. The invention can regulate and control phonon transition and transportation, reduce the heat of free carrier absorption, reduce the light absorption loss of the laser, reduce the resistance of the laser, reduce the joule heat loss and carrier absorption loss under current injection, and improve the problems of laser wavelength red shift, heat fading and aging light fading in the long-term use process of the laser. Meanwhile, the hole migration potential barrier is regulated and controlled, the acceptor compensation effect is reduced, the hole leakage is reduced, the electron potential barrier is improved, the electron leakage is reduced, the hole concentration and hole transport efficiency of an injected active layer are improved, refractive index dispersion caused by fluctuation of the concentration of high-concentration carriers is improved, spontaneous radiation and stimulated radiation efficiency are improved, the threshold current density is reduced, and the slope efficiency and the optical power of a laser are improved.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a GaN-based semiconductor laser chip.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, a strong QCSE quantum confinement Stark effect is generated, the band-gap of the laser is increased, hole injection is inhibited, the hole is more difficult to transport in a quantum well, the carrier injection is uneven, the gain is uneven, and the improvement of the laser electric lasing gain is limited;
2) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the problems that a hole injection barrier is promoted by a quantum well polarized electric field, the hole overflows an active layer and the like are solved, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced;
3) After the laser is excited, the carrier concentration of the active region of the multiple quantum well is saturated, the bipolar conductivity effect is weakened, the series resistance of the laser is increased, and the voltage of the laser is increased;
4) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is realized, the fluctuation of the concentration of high-concentration carriers influences the refractive index of an active layer, the limiting factor is reduced along with the increase of wavelength, and the mode gain of the laser is reduced;
5) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the quantum well polarization electric field promotes the problems that a hole injection barrier, the hole overflows an active layer and the like, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced.
Disclosure of Invention
In order to solve one of the technical problems, the invention provides a GaN-based semiconductor laser chip.
The embodiment of the invention provides a GaN-based semiconductor laser chip, which comprises a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper cladding layer which are sequentially arranged from bottom to top, wherein the active layer is a periodic structure formed by a well layer and a barrier layer, the active layer comprises a first sub-active layer and a second sub-active layer, and a conduction band effective state density gradient, a separation energy gradient, a polarized optical phonon energy gradient and a peak rate electric field gradient are formed among the lower waveguide layer, the first sub-active layer well layer, the second sub-active layer barrier layer, the upper waveguide layer, the electron blocking layer and the upper cladding layer.
Preferably, the effective state density of the conduction band of the first sub-active layer well layer is a, the effective state density of the conduction band of the second sub-active layer well layer is b, the effective state density of the conduction band of the second sub-active layer barrier layer is c, the effective state density of the conduction band of the lower waveguide layer is d, the peak effective state density of the conduction band of the upper waveguide layer is e1, the valley effective state density of the upper waveguide layer is e2, the effective state density of the conduction band of the upper cladding layer is f, the effective state density of the conduction band of the electron blocking layer is g, and the effective state densities of the conduction band of the first sub-active layer well layer, the second sub-active layer barrier layer, the lower waveguide layer, the upper cladding layer and the electron blocking layer form a gradient of effective state density of the conduction band: b is more than or equal to a and less than or equal to e2, d is more than or equal to e1, f is more than or equal to f and g is more than or equal to c.
Preferably, the separation energy of the first sub-active layer well layer is h, the separation energy of the second sub-active layer well layer is i, the separation energy of the second sub-active layer barrier layer is j, the separation energy of the lower waveguide layer is k, the peak separation energy of the upper waveguide layer is l1, the valley separation energy of the upper waveguide layer is l2, the separation energy of the upper cladding layer is m, and the separation energy of the electron blocking layer is n, and the separation energy gradient is formed by the separation energies of the first sub-active layer well layer, the second sub-active layer barrier layer, the lower waveguide layer, the upper cladding layer and the electron blocking layer: i is not less than h is not less than l2, k is not less than l1, j is not less than m is not less than n.
Preferably, the first sub-active layer well layer has a polarized optical phonon energy o, the second sub-active layer well layer has a polarized optical phonon energy p, the second sub-active layer well layer has a polarized optical phonon energy q, the lower waveguide layer has a polarized optical phonon energy r, the upper waveguide layer has a peak polarized optical phonon energy s1, the upper waveguide layer has a valley polarized optical phonon energy s2, the upper cladding layer has a polarized optical phonon energy t, and the electron blocking layer has a polarized optical phonon energy u, and the polarized optical phonon energies of the first sub-active layer well layer, the second sub-active layer barrier layer, the lower waveguide layer, the upper cladding layer and the electron blocking layer form a polarized optical phonon energy gradient: p is not less than o is not less than r2 is not less than r1 is not less than q is not less than t is not less than u.
Preferably, the peak rate electric field of the first sub-active layer well layer is a, the peak rate electric field of the second sub-active layer well layer is B, the peak rate electric field of the second sub-active layer barrier layer is C, the peak rate electric field of the lower waveguide layer is D, the peak rate electric field peak of the upper waveguide layer is E1, the peak rate electric field valley of the upper waveguide layer is E2, the peak rate electric field of the upper cladding layer is F, the peak rate electric field of the electron blocking layer is G, and the peak rate electric fields of the first sub-active layer well layer, the second sub-active layer barrier layer, the lower waveguide layer, the upper cladding layer and the electron blocking layer form a peak rate electric field gradient: b is more than or equal to A is more than or equal to E2 is more than or equal to D is more than or equal to E1 is more than or equal to C is more than or equal to F is more than or equal to G.
Preferably, the interface conduction band effective state density distribution of the upper waveguide layer and the electron blocking layer has a function y=x -2 A first quadrant curve distribution;
the upper waveguide layer and the electricityThe interfacial separation energy distribution of the sub-barrier has a function y=x 2 -e x A curve distribution.
Preferably, the interface polarized optical phonon energy distribution of the upper waveguide layer and the electron blocking layer has a function y=x 2 -e x Curve distribution;
the interface peak velocity electric field distribution of the upper waveguide layer and the electron blocking layer has a function y=x -2 The first quadrant curve distribution.
Preferably, the number of periods of the active layer is 1 to 5;
the active layer is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 100 Emi;
the barrier layer of the active layer is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 200 Emi.
Preferably, the lower cladding layer, the upper waveguide layer, the lower waveguide layer, the electron blocking layer, the upper cladding layer is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, inAs, gaSb, sapphire/SiO 2 Composite substrate, mo, tiW, cuW, cu, sapphire/AlN composite substrate, diamond, graphene, sapphire/SiN x sapphire/SiO 2 /SiN x Composite substrate, sapphire/SiN x /SiO 2 Composite substrate, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the invention are as follows: the invention forms a conduction band effective state density gradient, a separation energy gradient, a polarization optical phonon energy gradient and a peak velocity electric field gradient among the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper cladding layer of the semiconductor laser chip, controls the polarization optical phonon energy gradient and the separation energy gradient of the laser chip, regulates and controls phonon transition and transportation, reduces the heat absorbed by free carriers, reduces the light absorption loss of the laser, reduces the resistance of the laser, reduces the Joule heat loss and the carrier absorption loss under current injection, and improves the problems of laser wavelength red shift, heat fading and aging light attenuation in the long-term use process of the laser. Meanwhile, the effective state density gradient and the peak rate electric field gradient of the conduction band of the laser chip are regulated, the hole migration potential barrier is regulated, the acceptor compensation effect is reduced, the hole leakage is reduced, the electron potential barrier is improved, the electron leakage is reduced, the hole concentration and the hole transport efficiency of an injected active layer are improved, the refractive index dispersion caused by fluctuation of the concentration of a high-concentration carrier is improved, the spontaneous radiation and stimulated radiation efficiency is improved, the threshold current density is reduced, and the slope efficiency and the optical power of a laser are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
fig. 1 is a schematic structural diagram of a GaN-based semiconductor laser chip according to an embodiment of the invention;
fig. 2 is a SIMS secondary ion mass spectrum of a GaN-based semiconductor laser chip according to an embodiment of the invention;
fig. 3 is a SIMS secondary ion mass spectrum of a local amplification structure of a GaN-based semiconductor laser chip according to an embodiment of the invention;
FIG. 4 is a TEM lens electron microscope image of a GaN-based semiconductor laser chip according to an embodiment of the invention;
fig. 5 to 8 are partial enlarged TEM lens electron microscope views of a GaN-based semiconductor laser chip according to an embodiment of the present invention.
Reference numerals:
100. a substrate 101, a lower clad layer 102, a lower waveguide layer 103, an active layer 104, an upper waveguide layer 105, an electron blocking layer 106, an upper clad layer;
103a, a first sub-active layer, 103b, a second sub-active layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
As shown in fig. 1 to 8, the present embodiment proposes a GaN-based semiconductor laser chip including a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper cladding layer 106, which are disposed in this order from bottom to top. The GaN-based semiconductor laser chip has a conduction band effective state density gradient, a separation energy gradient, a polarized optical phonon energy gradient and a peak rate electric field gradient.
Specifically, in the present embodiment, the GaN-based semiconductor laser chip is provided with a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper cladding layer 106 in this order from bottom to top. The lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105 and the upper cladding layer 106 all have a conduction band effective state density, separation energy, polarized optical phonon energy and a peak velocity electric field therein. The GaN-based semiconductor laser chip has a conduction band effective state density gradient, a separation energy gradient, a polarized optical phonon energy gradient, and a peak rate electric field gradient by setting the conduction band effective state density, separation energy, polarized optical phonon energy, and peak rate electric field in the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper cladding layer 106.
Conduction band effective state density, an important concept in semiconductor physics, represents the energy state of electrons. The conduction band is the lowest unoccupied energy band. In semiconductors, electrons can transition from the valence band to the conduction band, forming a current. The effective density is very important for the electrical properties of semiconductors. In the conduction band, the effective state density of electrons is low because the conduction band is the occupied band in which there are few electrons.
Separation energy refers to the minimum energy required to separate a nucleus from an atomic nucleus. The separation energy can be calculated from data from absorption spectroscopy experiments, the size of which is related to the nature of the ligand and the central atom. If the metal ions are certain, the size of the separation energy is changed along with the strength of the crystal field; the greater the field strength, the greater the separation energy.
The polarized optical phonon energy, which is a tiny sound wave, can generate strong energy and can be used to analyze the physical properties of metals, glass, nanostructures and a large number of other materials. Optical phonons are a type of vibrational wave in a medium that is driven by an electric field. It is formed by the electrical general vibration of ions in a medium.
The peak velocity electric field, i.e. the peak intensity of the velocity electric field, is the fundamental property of the crystal.
Based on the characteristics of the effective state density, the separation energy, the polarized optical phonon energy and the peak velocity electric field of the conduction band, the embodiment sets the GaN-based semiconductor laser chip to have the effective state density gradient, the separation energy gradient, the polarized optical phonon energy gradient and the peak velocity electric field gradient of the conduction band so as to improve the working performance of the GaN-based semiconductor laser chip.
More specifically, in the present embodiment, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the active layer 103 includes a first sub-active layer 103a and a second sub-active layer 103b. A conduction band effective state density gradient, a separation energy gradient, a polarized optical phonon energy gradient and a peak rate electric field gradient are formed among the lower waveguide layer 102, the first sub-active layer 103a well layer, the second sub-active layer 103b barrier layer, the upper waveguide layer 104, the electron blocking layer 105 and the upper cladding layer 106, and are respectively:
(1) Conduction band effective state density gradient
The effective state density of the conduction band of the well layer of the first sub-active layer 103a is a;
the effective state density of the conduction band of the well layer of the second sub-active layer 103b is b;
the conduction band effective state density of the second sub-active layer 103b barrier layer is c;
the effective state density of the conduction band of the lower waveguide layer 102 is d;
the peak conduction band effective state density of the upper waveguide layer 104 is e1;
the valley conduction band effective state density of the upper waveguide layer 104 is e2;
the upper cladding layer 106 has a conduction band effective state density f;
the effective density of the conduction band of the electron blocking layer 105 is g;
the conduction band effective state densities of the first sub-active layer 103a well layer, the second sub-active layer 103b barrier layer, the lower waveguide layer 102, the upper waveguide layer 104, the upper cladding layer 106, and the electron blocking layer 105 form a conduction band effective state density gradient: b is more than or equal to a and less than or equal to e2, d is more than or equal to e1, f is more than or equal to f and g is more than or equal to c.
(2) Separation energy gradient
The separation energy of the well layer of the first sub-active layer 103a is h;
the separation energy of the well layer of the second sub-active layer 103b is i;
the separation energy of the second sub-active layer 103b barrier layer is j;
the separation energy of lower waveguide layer 102 is k;
the peak separation energy of the upper waveguide layer 104 is l1;
the valley separation energy of the upper waveguide layer 104 is l2
The separation energy of the upper cladding layer 106 is m;
the separation energy of the electron blocking layer 105 is n;
the separation energy of the first sub-active layer 103a well layer, the second sub-active layer 103b barrier layer, the lower waveguide layer 102, the upper waveguide layer 104, the upper cladding layer 106, and the electron blocking layer 105 forms a separation energy gradient: i is not less than h is not less than l2, k is not less than l1, j is not less than m is not less than n.
(3) Polarized optical phonon energy gradient
The polarized optical phonon energy of the well layer of the first sub-active layer 103a is o;
the polarized optical phonon energy of the second sub-active layer 103b well layer is p;
the polarized optical phonon energy of the second sub-active layer 103b barrier layer is q;
the polarized optical phonon energy of lower waveguide layer 102 is r;
the peak polarized optical phonon energy of the upper waveguide layer 104 is s1;
the valley polarization optical phonon energy of the upper waveguide layer 104 is s2;
the polarized optical phonon energy of the upper cladding layer 106 is t;
the polarized optical phonon energy of the electron blocking layer 105 is u;
the polarized optical phonon energies of the first sub-active layer 103a well layer, the second sub-active layer 103b barrier layer, the lower waveguide layer 102, the upper waveguide layer 104, the upper cladding layer 106, and the electron blocking layer 105 form a polarized optical phonon energy gradient: p is not less than o is not less than r2 is not less than r1 is not less than q is not less than t is not less than u.
(4) Peak rate electric field gradient
The peak rate electric field of the well layer of the first sub-active layer 103a is a;
the peak rate electric field of the second sub-active layer 103B well layer is B;
the peak rate electric field of the second sub-active layer 103b barrier layer is C;
the peak velocity electric field of lower waveguide layer 102 is D;
the peak velocity electric field peak of the upper waveguide layer 104 is E1;
the peak velocity electric field valley of the upper waveguide layer 104 is E2;
the peak velocity electric field of the upper cladding layer 106 is F;
the peak velocity electric field of the electron blocking layer 105 is G;
the peak rate electric fields of the first sub-active layer 103a well layer, the second sub-active layer 103b barrier layer, the lower waveguide layer 102, the upper waveguide layer 104, the upper cladding layer 106, and the electron blocking layer 105 form a peak rate electric field gradient: b is more than or equal to A is more than or equal to E2 is more than or equal to D is more than or equal to E1 is more than or equal to C is more than or equal to F is more than or equal to G.
The interface between the upper waveguide layer 104 and the electron blocking layer 105 further has specific effective state density of conduction band, separation energy, polarized optical phonon energy and peak rate electric field distribution characteristics, which are specifically expressed as follows:
the interface conduction band effective state density distribution of the upper waveguide layer 104 and the electron blocking layer 105 has a function y=x -2 A first quadrant curve distribution;
the interfacial separation energy profile of the upper waveguide layer 104 and the electron blocking layer 105 has a function y=x 2 -e x Curve distribution;
the interfacial polarized optical phonon energy distribution of the upper waveguide layer 104 and the electron blocking layer 105 has a function y=x 2 -e x Curve distribution;
the peak rate electric field profile at the interface of the upper waveguide layer 104 and the electron blocking layer 105 has a function y=x -2 The first quadrant curve distribution.
In the embodiment, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105 and the upper cladding layer 106 of the semiconductor laser chip are combined to form a conduction band effective state density gradient, a separation energy gradient, a polarized optical phonon energy gradient and a peak velocity electric field gradient, so that the polarized optical phonon energy gradient and the separation energy gradient of the laser chip are controlled, phonon transition and transportation are regulated, the heat absorbed by free carriers is reduced, the light absorption loss of the laser is reduced, the resistance of the laser is reduced, the joule heat loss and the carrier absorption loss under current injection are reduced, and the problems of laser wavelength red shift, heat fading and aging light fading in the long-term use process of the laser are improved. Meanwhile, the effective state density gradient and the peak rate electric field gradient of the conduction band of the laser chip are regulated, the hole migration potential barrier is regulated, the acceptor compensation effect is reduced, the hole leakage is reduced, the electron potential barrier is improved, the electron leakage is reduced, the hole concentration and the hole transport efficiency of the injected active layer 103 are improved, the refractive index dispersion caused by fluctuation of the high-concentration carrier concentration is improved, the spontaneous radiation and stimulated radiation efficiency is improved, the threshold current density is reduced, and the slope efficiency and the optical power of the laser are improved.
Further, the number of periods of the active layer 103 is 1 to 5. The active layer 103 is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 100 Emi.
The barrier layer of the active layer 103 is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 200 Emi.
Lower cladding layer 101, upper waveguide layer 104, lower waveguide layer 102, electron blocking layer 105, upper cladding layer 106 is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, inAs, gaSb, sapphire/SiO 2 Composite substrate, mo, tiW, cuW, cu, sapphire/AlN composite substrate, diamond, graphene, sapphire/SiN x sapphire/SiO 2 /SiN x Composite substrate, sapphire/SiN x /SiO 2 Composite substrate, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Of composite substratesAny one of them.
The following table shows the comparison of the performance parameters of the GaN-based semiconductor laser chip proposed in this embodiment and the conventional semiconductor laser chip:
it can be seen that the threshold current density of the GaN-based semiconductor laser chip proposed in this embodiment is from 2.4kA/cm 2 Down to 0.87kA/cm 2 The slope efficiency is increased from 1.12W/A to 2.13W/A, and the optical power is increased from 4.8W to 8.34W, so that the performance of the semiconductor laser chip is remarkably improved.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (10)
1. The GaN-based semiconductor laser chip comprises a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper cladding layer which are sequentially arranged from bottom to top, and is characterized in that the active layer is of a periodic structure consisting of a well layer and a barrier layer, the active layer comprises a first sub-active layer and a second sub-active layer, and a conduction band effective state density gradient, a separation energy gradient, a polarized optical phonon energy gradient and a peak rate electric field gradient are formed among the lower waveguide layer, the first sub-active layer well layer, the second sub-active layer barrier layer, the upper waveguide layer, the electron blocking layer and the upper cladding layer.
2. The GaN-based semiconductor laser chip of claim 1, wherein the first sub-active layer well layer has a conduction band effective state density of a, the second sub-active layer well layer has a conduction band effective state density of b, the second sub-active layer barrier layer has a conduction band effective state density of c, the lower waveguide layer has a conduction band effective state density of d, the upper waveguide layer has a peak conduction band effective state density of e1, the upper waveguide layer has a valley conduction band effective state density of e2, the upper cladding layer has a conduction band effective state density of f, the electron blocking layer has a conduction band effective state density of g, and the first sub-active layer well layer, the second sub-active layer barrier layer, the lower waveguide layer, the upper cladding layer, and the electron blocking layer have conduction band effective state densities forming a conduction band effective state density gradient: b is more than or equal to a and less than or equal to e2, d is more than or equal to e1, f is more than or equal to f and g is more than or equal to c.
3. The GaN-based semiconductor laser chip according to claim 1, wherein the separation energy of the first sub-active layer well layer is h, the separation energy of the second sub-active layer well layer is i, the separation energy of the second sub-active layer barrier layer is j, the separation energy of the lower waveguide layer is k, the peak separation energy of the upper waveguide layer is l1, the valley separation energy of the upper waveguide layer is l2, the separation energy of the upper cladding layer is m, the separation energy of the electron blocking layer is n, and the separation energy of the first sub-active layer well layer, the second sub-active layer barrier layer, the lower waveguide layer, the upper cladding layer, and the electron blocking layer form a separation energy gradient: i is not less than h is not less than l2, k is not less than l1, j is not less than m is not less than n.
4. The GaN-based semiconductor laser chip of claim 1, wherein the first sub-active layer well layer has a polarized optical phonon energy o, the second sub-active layer well layer has a polarized optical phonon energy p, the second sub-active layer well layer has a polarized optical phonon energy q, the lower waveguide layer has a polarized optical phonon energy r, the upper waveguide layer has a peak polarized optical phonon energy s1, the upper waveguide layer has a valley polarized optical phonon energy s2, the upper cladding layer has a polarized optical phonon energy t, the electron blocking layer has a polarized optical phonon energy u, and the polarized optical phonon energies of the first sub-active layer well layer, the second sub-active layer barrier layer, the lower waveguide layer, the upper cladding layer, and the electron blocking layer form a polarized optical phonon energy gradient: p is not less than o is not less than r2 is not less than r1 is not less than q is not less than t is not less than u.
5. The GaN-based semiconductor laser chip of claim 1, wherein the peak rate electric field of the first sub-active layer well layer is a, the peak rate electric field of the second sub-active layer well layer is B, the peak rate electric field of the second sub-active layer barrier layer is C, the peak rate electric field of the lower waveguide layer is D, the peak rate electric field peak of the upper waveguide layer is E1, the peak rate electric field valley of the upper waveguide layer is E2, the peak rate electric field of the upper cladding layer is F, the peak rate electric field of the electron blocking layer is G, and the peak rate electric fields of the first sub-active layer well layer, the second sub-active barrier layer, the lower waveguide layer, the upper cladding layer, and the electron blocking layer form a peak rate electric field gradient: b is more than or equal to A is more than or equal to E2 is more than or equal to D is more than or equal to E1 is more than or equal to C is more than or equal to F is more than or equal to G.
6. The GaN-based semiconductor laser chip of claim 1, wherein the interface conduction band effective state density distribution of the upper waveguide layer and the electron blocking layer has a function y=x -2 A first quadrant curve distribution;
the interface separation energy distribution of the upper waveguide layer and the electron blocking layer has a function y=x 2 -e x A curve distribution.
7. The GaN-based semiconductor laser chip of claim 1 wherein the interface polarized optical phonon energy distribution of the upper waveguide layer and the electron blocking layer has a function y = x 2 -e x Curve distribution;
the interface peak velocity electric field distribution of the upper waveguide layer and the electron blocking layer has a function y=x -2 The first quadrant curve distribution.
8. The GaN-based semiconductor laser chip of claim 1, wherein the number of periods of the active layer is 1 to 5;
the active layer is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 100 Emi;
the barrier layer of the active layer is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 200 Emi.
9. The GaN-based semiconductor laser chip of claim 1, wherein the lower cladding layer, upper waveguide layer, lower waveguide layer, electron blocking layer, upper cladding layer is GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, inGaAsN, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, inAsSb, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of BN and diamond.
10. The GaN-based semiconductor laser chip of claim 1, wherein said substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, inAs, gaSb, sapphire/SiO 2 Composite substrate, mo, tiW, cuW, cu, sapphire/AlN composite substrate, diamond, graphene, sapphire/SiN x sapphire/SiO 2 /SiN x Composite substrate, sapphire/SiN x /SiO 2 Composite substrate, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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