CN117387823A - Nano thin film resistance strain type single diaphragm pressure transmitter - Google Patents
Nano thin film resistance strain type single diaphragm pressure transmitter Download PDFInfo
- Publication number
- CN117387823A CN117387823A CN202311383754.5A CN202311383754A CN117387823A CN 117387823 A CN117387823 A CN 117387823A CN 202311383754 A CN202311383754 A CN 202311383754A CN 117387823 A CN117387823 A CN 117387823A
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- pressure
- bridge
- pressure cavity
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- 239000010409 thin film Substances 0.000 title description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 26
- 239000002120 nanofilm Substances 0.000 claims abstract description 24
- 239000012528 membrane Substances 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000007747 plating Methods 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 12
- 239000012530 fluid Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002103 nanocoating Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/06—Devices or apparatus for measuring differences of two or more fluid pressure values using electric or magnetic pressure-sensitive elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a nano film resistor strain type single-diaphragm pressure transmitter, which comprises a high-pressure cavity, an elastic diaphragm, a low-pressure cavity, a strip-shaped bridge arm and a connecting ring, wherein a nano film layer is plated on the strip-shaped bridge arm, a sensitive resistor and a photoetching circuit are photoetched on the nano film layer, the sensitive resistor and the photoetching circuit form a Wheatstone full-bridge circuit, a nano film plating and photoetching sensitive resistor technology is adopted, and the structure of measuring differential pressure by the single-elastic diaphragm and the bridge arm can enable the precision to reach 0.05 percent FS, the highest use temperature can reach 400 ℃, and the measuring range can be realized from 5kPa to 250MPa, so that the pressure transmitter has wide application prospect.
Description
Technical Field
The invention relates to the technical field of pressure measurement, in particular to a nano thin film resistance strain type single-diaphragm pressure transmitter.
Background
The pressure transmitter is mainly composed of a load cell sensor, a measuring circuit and a process connector. Physical pressure parameters such as gas, liquid and the like sensed by the load cell sensor are converted into standard electrical signals to be supplied to secondary instruments such as an indication alarm instrument, a recorder instrument, a regulator and the like for measurement, indication and process adjustment.
The pressure transmitter has various types, but the pressure core principle adopted by the pressure transmitter mainly comprises the following three types: the first is a metal capacitive pressure transmitter, the working principle is that the external pressure difference is transmitted to the internal metal capacitive polar plate, when the polar plate is displaced, the capacitance change is generated, and the linear output of the pressure signal is obtained after the capacitance change is compensated by the electronic circuit collecting and amplifying software. The second type is monocrystalline silicon pressure transmitter, the working principle is that the external pressure difference is transmitted to the internal monocrystalline silicon resonance beam, the resonance beam generates a pair of differential frequency signals following the pressure change under the action of pressure, and the pair of differential frequency signals are collected, amplified and compensated by software by an electronic circuit to obtain the linear output of the pressure signals. The third is monocrystalline silicon resistance pressure transmitter, which has the working principle that the external pressure difference is transmitted to the internal monocrystalline silicon full-dynamic piezoresistive effect Wheatstone bridge, the Wheatstone bridge generates a voltage signal output which changes along with the pressure under the action of the pressure, and the voltage signal is collected, amplified and software compensated by the electronic circuit to obtain the linear output of the pressure signal.
The single crystal silicon type pressure sensor has poor temperature stability, the temperature has great influence on the single crystal silicon type pressure sensor, when the temperature exceeds 150 ℃, the silicon crystal gradually loses the semiconductor characteristic, so that the measuring function is lost, and therefore, the pressure transmitter with wide range, high precision, small temperature influence and good long-term measuring stability is needed to be provided.
Disclosure of Invention
The invention aims to provide a nano thin film resistor strain type single-diaphragm pressure transmitter with wide range, high precision, small temperature influence and good long-term measurement stability, so as to solve the problems of the pressure transmitter in the background art.
The aim of the invention can be achieved by the following technical scheme:
a nano-film resistance strain type single diaphragm pressure transmitter comprising:
a high-pressure cavity, one end of which is provided with an elastic membrane;
the two ends of the low-pressure cavity are opened to form a low-pressure cavity;
bridge piers are arranged at two ends and the middle of one side of the strip bridge arm, the strip bridge arm is welded on the elastic membrane through the bridge piers, two bridge holes are symmetrically formed in two sides of the bridge pier positioned in the middle, elastic arms are formed above the bridge holes, a nano film layer is plated on the surface of one side of the strip bridge arm, which is opposite to the bridge holes, four sensitive resistors and four photoetching circuits are respectively arranged on the nano film layer in a photoetching manner and form a Wheatstone full bridge circuit, and the four sensitive resistors are respectively positioned on the two elastic arms;
the connecting ring is sleeved at the joint of the high-pressure cavity and the low-pressure cavity and is used for connecting the high-pressure cavity and the low-pressure cavity together in a sealing way, and the connecting ring is provided with a lead needle which is used for outputting electric signals on the photoetching circuit.
As a further scheme of the invention: the thickness of the elastic membrane is 0.03mm-4mm, a boss is arranged in the center of one side of the elastic membrane, which is positioned in the high-pressure cavity, and the boss is used for being welded with the bridge pier.
As a further scheme of the invention: the strip-shaped bridge arm further comprises a ring body, the strip-shaped bridge arm is integrally arranged in the ring body, and the strip-shaped bridge arm is located on a warp in the ring body.
As a further scheme of the invention: the output end of the photoetching circuit is connected with a first gold wire bonding pad, the input end of the lead pin is connected with a second gold wire bonding pad, and the second gold wire bonding pad is electrically connected with the first gold wire bonding pad through gold wires.
As a further scheme of the invention: and two positioning holes for positioning the photoetching patterns are formed in the surface of the end part of the strip-shaped bridge arm, which is far away from the first gold wire bonding pad.
As a further scheme of the invention: the nano film layer comprises a transition layer, an insulating layer, a sensitive layer, a bonding pad layer and a protective layer which are sequentially arranged from bottom to top, and the sensitive resistor and the photoetching circuit are subjected to photoetching on the sensitive layer.
As a further scheme of the invention: and the side wall of the low-pressure cavity is also provided with a temperature sensor mounting hole.
The invention has at least the following beneficial effects:
the invention sets up the elastic membrane and the bar bridge arm welded together, the nanometer film layer plated on the bar bridge arm and the sensitive resistor and the photoetching circuit photoetched on the nanometer film layer, the sensitive resistor and the photoetching circuit form a Wheatstone full bridge circuit, the high pressure fluid acts the pressure on the left side of the elastic membrane, the low pressure fluid acts the pressure on the right side of the elastic membrane and the bar bridge arm, the pressure on the two sides counteracts a part, the elastic membrane is deformed by the pressure part (differential pressure) with the phase difference, the deformation of the elastic membrane causes the elastic arm on the bar bridge arm to deform maximally, the deformation of the elastic membrane is amplified by the bar bridge arm, the deformation of the elastic arm causes the deformation of the four sensitive resistors, the deformation of the four sensitive resistors causes the resistance values of the four sensitive resistors to change, voltage is applied to two ends of the Wheatstone bridge, weak millivolt electric signals proportional to the deformation of the elastic membrane are output at the other two ends, the electric signals are amplified under the processing of the signal conditioning circuit, and when standard current, voltage or digital signals are output, a transmitter is formed, the nano coating and photoetching sensitive resistor technology is adopted, and the structure of measuring differential pressure by a single elastic membrane and a bridge arm can enable the precision to reach 0.05 percent FS, the highest use temperature can reach 400 ℃, the measuring range can be realized from 5kPa to 250MPa, and the method has wide application prospect.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic cross-sectional view of the overall structure of the present invention;
FIG. 2 is a schematic cross-sectional view of the high pressure chamber structure of the present invention;
FIG. 3 is a schematic cross-sectional view of the low pressure chamber structure of the present invention;
FIG. 4 is a schematic top view of a bar bridge arm structure of the present invention;
FIG. 5 is a schematic side view of a bar bridge arm structure of the present invention;
FIG. 6 is a schematic top view of a strip bridge arm structure with a ring body of the present invention;
FIG. 7 is a schematic top view of the connecting ring structure of the present invention;
fig. 8 is a schematic block diagram of the circuit of the present invention.
In the figure: 1. a high pressure cavity; 11. a high pressure chamber; 2. an elastic membrane; 21. a boss; 3. a low pressure cavity; 31. a low pressure chamber; 32. a temperature sensor mounting hole; 4. a bar bridge arm; 41. bridge piers; 42. bridge opening; 43. an elastic arm; 44. a nano-film layer; 45. a sensitive resistor; 46. a photolithographic circuit; 47. a first gold wire bonding pad; 48. positioning holes; 5. a connecting ring; 51. a wire needle; 52. a second gold wire bonding pad; 6. and a ring body.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The differential pressure (pressure) sensor/transmitter on the market is various in model types at present, but the differential pressure (pressure) core principle adopted by the differential pressure sensor/transmitter is mainly as follows:
the first is a capacitive sensor, and the pressure pushes the metal polar plate, so that the capacitance is changed, and the capacitance is converted into an electric signal to be output.
The second type is a monocrystalline silicon resonant sensor, the pressure enables the resonant beam to generate certain vibration frequency, and then the frequency is converted into an electric signal to be output.
And the third is a monocrystalline silicon piezoresistive sensor, the pressure changes the resistance value of monocrystalline silicon resistance, and the monocrystalline silicon resistance is converted into a tiny voltage signal through a Wheatstone bridge to be output.
The three technologies, the core patent and the technology are mastered in the European and American national hands, and the currently introduced technology and the imitated core body are low in precision. The capacitive differential pressure sensor technology introduced in the 80 s of the last century can only achieve about 0.5% of FS precision in China at present, and the precision of 0.05% of FS is achieved after the U.S. is improved.
The single crystal silicon type pressure sensor has poor temperature stability, the temperature has a great influence on the pressure sensor, and when the temperature exceeds 150 ℃, the silicon crystal gradually loses the semiconductor characteristic, so that the measuring function is lost.
In order to solve the above problems, referring to fig. 1-8, an embodiment of the present invention provides a nano-film resistance strain type single-diaphragm pressure transmitter, which includes a high-pressure cavity 1, an elastic diaphragm 2, a low-pressure cavity 3, a strip bridge arm 4 and a connection ring 5.
As shown in fig. 2, one end of the high-pressure cavity 1 is provided with an elastic membrane 2 integrally connected with the high-pressure cavity 1, a high-pressure cavity 11 is formed in the high-pressure cavity 1, and the high-pressure cavity 11 is used for introducing high-pressure fluid to be detected.
As shown in fig. 3, both ends of the low pressure cavity 3 are opened to form a low pressure cavity 31, and the low pressure cavity 31 is used for introducing the low pressure fluid to be measured.
As shown in fig. 1, fig. 4 and fig. 5, bridge piers 41 are respectively arranged at two ends and the middle of one side of the bar bridge arm 4, the bar bridge arm 4 is welded on the elastic membrane 2 through the bridge piers 41, two bridge holes 42 are symmetrically arranged at two sides of the bridge piers 41 positioned in the middle, an elastic arm 43 is formed above the bridge holes 42, the strain at the elastic arm 43 is maximum, a nano film layer 44 is plated on one side surface of the bar bridge arm 4 corresponding to the bridge holes 42, four sensitive resistors 45 and four photoetching circuits 46 are respectively arranged on the nano film layer 44 and form a wheatstone full bridge circuit, the four sensitive resistors 45 are respectively arranged on the elastic arm 43, voltages are applied at two ends of the wheatstone bridge, and electric signals proportional to the deformation of the elastic membrane 2 are output at the other two ends, so that the sensor core body is formed.
As shown in fig. 1 and 7, the connection ring 5 is sleeved at the connection position of the high-voltage cavity 1 and the low-voltage cavity 3, the high-voltage cavity 1 and the low-voltage cavity 3 are connected together in a sealing manner, the connection ring 5 is provided with a lead needle 51, the lead needle 51 is used for outputting an electric signal on the photoetching circuit 46, the output end of the photoetching circuit 46 can be connected with a first gold wire bonding pad 47, the input end of the lead needle 51 is connected with a second gold wire bonding pad 52, and the second gold wire bonding pad 52 is electrically connected with the first gold wire bonding pad 47 through gold wires, so that the electric signal generated by deformation of the strip bridge arm 4 is output from the output end of the lead needle 51.
The working principle of the invention is as follows:
as shown in fig. 1, high-pressure fluid is passed through the high-pressure chamber 11 of the high-pressure chamber 1, low-pressure fluid is passed through the low-pressure chamber 31 of the low-pressure chamber 3, the high-pressure fluid in the high-pressure chamber 11 acts on the left side of the elastic membrane 2, the low-pressure fluid in the low-pressure chamber 31 acts on the right side of the elastic membrane 2 and the strip-shaped bridge arm 4, the pressure on two sides counteracts a part, the elastic membrane 2 is deformed by the pressure part (differential pressure) with the phase difference, the deformation of the elastic membrane 2 causes the deformation of the strip-shaped bridge arm 4 welded with the elastic membrane, especially the deformation of the elastic arm 43 on the strip-shaped bridge arm 4 is the greatest, so that the deformation of the elastic membrane 2 is amplified by the strip-shaped bridge arm 4, the deformation of the elastic arm 43 causes the deformation of the four sensitive resistors 45, the deformation of the four sensitive resistors 45 causes the resistance values of the four sensitive resistors 45 to change, as shown in fig. 8, the voltage is applied at two ends of the wheatstone bridge, the weak voltage signal in direct proportion to the deformation of the elastic membrane is output from the two ends, the electric signal is output from the wheatstone bridge, and the signal is processed by the conditioning plate signal, and the RS/CAN be continuously output, the voltage or the millivolt signal is output, and the signal is directly formed by the PCB or the transducer.
In practical implementation, the thickness and the size of the elastic membrane 2 are different according to the measured differential pressure, and in practical use, the thickness of the elastic membrane 2 can be 0.03mm-4mm, preferably, the center of one side of the elastic membrane 2 positioned in the high-pressure cavity 11 is provided with a boss 21, the boss 21 is thicker than the elastic membrane 2, the opposite surface of the boss 21 is used for welding the strip bridge arm 4, and the boss 21 is used for preventing the elastic membrane 2 from being broken down during welding.
Further, as shown in fig. 6, the strip-shaped bridge arm 4 further comprises a ring body 6, the strip-shaped bridge arm 4 is integrally arranged in the ring body 6, the strip-shaped bridge arm 4 is positioned on a warp in the ring body 6, and the ring body 6 is used for being welded with the high-pressure cavity 1, so that the strip-shaped bridge arm 4 is more firmly connected with the high-pressure cavity 1, and the subsequent processing and manufacturing are facilitated.
Preferably, two positioning holes 48 for positioning the photoetching patterns are formed in the surface of the end part of the strip-shaped bridge arm 4, which is far away from the first gold wire bonding pad 47, so that the photoetching accuracy and efficiency are improved.
Preferably, the nano-film layer 44 includes a transition layer, an insulating layer, a sensitive layer, a pad layer, and a protective layer sequentially disposed from bottom to top, and the sensitive resistor 45 and the photolithography circuit 46 are photo-etched on the sensitive layer.
Preferably, the side wall of the low-pressure cavity 3 is also provided with a temperature sensor mounting hole 32 for measuring and compensating the temperature of the liquid.
Compared with the existing capacitive and monocrystalline silicon pressure/differential pressure sensor, the nano thin film resistor strain type single-diaphragm pressure transmitter provided by the invention has the following advantages:
the method is based on the nano film photoetching technology, provides a measurement mode of generating an atomic level Wheatstone bridge, ensures high measurement precision and good long-term stability, establishes a measurement method of an amplifying structure of an elastic film cavity and a bridge arm, realizes a combined technology of nano film plating and photoetching sensitive resistor 45, and adopts a single-diaphragm direct pressure sensing structure.
The structure of adopting the nano coating and photoetching sensitive resistor 45 technology and measuring differential pressure by a single elastic diaphragm 2 plus bridge arm can lead the precision to reach 0.05 percent FS, the highest use temperature to reach 400 ℃, and the measuring range to be realized from 5kPa to 250MPa, thereby having wide application prospect.
In the description of the present invention, it should be understood that the terms "upper," "lower," "left," "right," "front," "rear," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, as well as a specific orientation configuration and operation, and thus should not be construed as limiting the present invention.
In addition, unless explicitly stated or limited otherwise, the terms "mounted," "connected," "coupled," and the like should be construed broadly, and may be, for example, fixedly attached, detachably attached, or integrally attached; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The foregoing detailed description of the preferred embodiments of the invention should not be taken as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (7)
1. The utility model provides a nanometer sheet resistance strain type single diaphragm pressure transmitter which characterized in that includes:
a high-pressure cavity (1), one end of which is provided with an elastic membrane (2);
a low-pressure cavity (3) with two ends open to form a low-pressure cavity (31);
two bridge holes (42) are symmetrically formed in two sides of the bridge pier (41) in the middle of the bridge pier (4), elastic arms (43) are formed above the bridge holes (42), a nano film layer (44) is plated on one side surface of the bridge hole (42) of the bridge arm (4), four sensitive resistors (45) and four photoetching circuits (46) are respectively arranged on the nano film layer (44) in a photoetching way, and a Wheatstone full bridge circuit is formed by the four sensitive resistors (45) which are respectively arranged on the two elastic arms (43);
the connecting ring (5) is sleeved at the joint of the high-pressure cavity (1) and the low-pressure cavity (3), the high-pressure cavity (1) and the low-pressure cavity (3) are connected together in a sealing mode, the connecting ring (5) is provided with a lead needle (51), and the lead needle (51) is used for outputting electric signals on the photoetching circuit (46).
2. The nano-film resistance strain type single-diaphragm pressure transmitter according to claim 1, wherein the thickness of the elastic diaphragm (2) is 0.03mm-4mm, a boss (21) is arranged in the center of one side of the elastic diaphragm (2) in the high-pressure cavity (1), and the boss (21) is used for being welded with the bridge pier (41).
3. The nano-film resistance strain type single-diaphragm pressure transmitter of claim 2, wherein the strip-shaped bridge arm (4) further comprises a ring body (6), the strip-shaped bridge arm (4) is integrally arranged in the ring body (6), and the strip-shaped bridge arm (4) is positioned on a warp line in the ring body (6).
4. A nano-film resistance strain type single-diaphragm pressure transmitter as claimed in claim 1 or 3, wherein the output end of the photoetching circuit (46) is connected with a first gold wire bonding pad (47), the input end of the lead pin (51) is connected with a second gold wire bonding pad (52), and the second gold wire bonding pad (52) is electrically connected with the first gold wire bonding pad (47) through gold wires.
5. The nano-film resistance strain type single-diaphragm pressure transmitter of claim 4, wherein two positioning holes (48) for positioning a photolithography pattern are formed on the end surface of the strip bridge arm (4) away from the first gold wire bonding pad (47).
6. The nano-film resistance strain type single-diaphragm pressure transmitter of claim 1, wherein the nano-film layer (44) comprises a transition layer, an insulating layer, a sensitive layer, a bonding pad layer and a protective layer which are sequentially arranged from bottom to top, and the sensitive resistor (45) and the photoetching circuit (46) are photoetched on the sensitive layer.
7. The nano-film resistance strain type single-diaphragm pressure transmitter of claim 1, wherein the side wall of the low-pressure cavity (3) is further provided with a temperature sensor mounting hole (32).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311383754.5A CN117387823A (en) | 2023-10-24 | 2023-10-24 | Nano thin film resistance strain type single diaphragm pressure transmitter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311383754.5A CN117387823A (en) | 2023-10-24 | 2023-10-24 | Nano thin film resistance strain type single diaphragm pressure transmitter |
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| Publication Number | Publication Date |
|---|---|
| CN117387823A true CN117387823A (en) | 2024-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311383754.5A Pending CN117387823A (en) | 2023-10-24 | 2023-10-24 | Nano thin film resistance strain type single diaphragm pressure transmitter |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050034529A1 (en) * | 2003-05-07 | 2005-02-17 | Hongxing Tang | Strain sensors based on nanowire piezoresistor wires and arrays |
| CN116067559A (en) * | 2022-12-21 | 2023-05-05 | 松诺盟科技有限公司 | High static pressure nanometer membrane differential pressure transmitter |
| CN116183070A (en) * | 2022-12-26 | 2023-05-30 | 松诺盟科技有限公司 | Steel-based small-range nano film elastomer, manufacturing method and pressure sensor |
| CN116519178A (en) * | 2023-05-18 | 2023-08-01 | 松诺盟科技有限公司 | Nano thin film strain gauge, spoke force sensor and preparation method of spoke force sensor |
-
2023
- 2023-10-24 CN CN202311383754.5A patent/CN117387823A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050034529A1 (en) * | 2003-05-07 | 2005-02-17 | Hongxing Tang | Strain sensors based on nanowire piezoresistor wires and arrays |
| CN116067559A (en) * | 2022-12-21 | 2023-05-05 | 松诺盟科技有限公司 | High static pressure nanometer membrane differential pressure transmitter |
| CN116183070A (en) * | 2022-12-26 | 2023-05-30 | 松诺盟科技有限公司 | Steel-based small-range nano film elastomer, manufacturing method and pressure sensor |
| CN116519178A (en) * | 2023-05-18 | 2023-08-01 | 松诺盟科技有限公司 | Nano thin film strain gauge, spoke force sensor and preparation method of spoke force sensor |
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