CN117373917B

CN117373917B - Semiconductor device processing method and system and electronic equipment

Info

Publication number: CN117373917B
Application number: CN202311667061.9A
Authority: CN
Inventors: 李树瑜
Original assignee: Tianjin Jizhaoyuan Technology Co ltd
Current assignee: Tianjin Jizhaoyuan Technology Co ltd
Priority date: 2023-12-07
Filing date: 2023-12-07
Publication date: 2024-03-08
Anticipated expiration: 2043-12-07
Also published as: CN117373917A

Abstract

The application provides a semiconductor device processing method, a semiconductor device processing system and electronic equipment, and relates to the technical field of semiconductor device manufacturing. Comprising the following steps: acquiring a target plasma density based on the plasma density at a specified location in the vicinity of the semiconductor device in each reaction chamber before entering the semiconductor etching stage; adjusting the output power of a first radio frequency power supply of the reaction chamber to a first target output power obtained based on the target plasma density; after entering the semiconductor etching stage, acquiring a target plasma power based on the plasma power at the specified position in each reaction chamber; and adjusting the output power of the second radio frequency power supply of the reaction chamber to a second target output power acquired based on the target plasma power to complete etching processing of the semiconductor device in the reaction chamber. The selection mode of the reference standard for adjusting the output power and the specific content of the reference standard can better ensure the process consistency of the semiconductor device.

Description

Semiconductor device processing method and system and electronic equipment

Technical Field

The application relates to the technical field of semiconductor device manufacturing, in particular to a semiconductor device processing method, a semiconductor device processing system and electronic equipment.

Background

At present, the plasma equipment is widely applied to the etching processing of the semiconductor device, the etching processing of the semiconductor device by the plasma equipment can be divided into two stages, wherein the first stage is a plasma generation stage, plasma is generated in a reaction chamber by excitation of one radio frequency power supply of the equipment, the second stage is a semiconductor etching stage, the energy of the plasma is controlled by the other radio frequency power supply of the equipment, and the energy of the plasma acting on the semiconductor device is controlled so as to carry out the etching processing of the semiconductor device according to preset process requirements.

In the process of batch semiconductor etching, in order to ensure the process consistency of semiconductor devices of different reaction chambers, operators in the prior art can perform consistency calibration on the output power of a radio frequency power supply in the semiconductor etching stage. Specifically, a reference chamber is determined, then the actual output power of the radio frequency power supply of the reference chamber is used as a correction reference of other chambers, then the respective actual output power of the other chambers is compared with the correction reference to obtain an output power compensation value, and the obtained output power compensation value is utilized to carry out power compensation on the chambers so as to realize the output power consistency calibration of the chambers and further the process consistency of the etching processing of the semiconductor device.

However, in the above semiconductor device processing scheme, on one hand, when the power consistency calibration is performed on each chamber in the prior art, the reference standard adopted is the actual output power of the specific reference chamber, if the output power of the reference chamber itself has a large error and cannot meet the processing technology requirement, the consistency calibration performed on other reaction chambers by taking the reference chamber as the reference standard cannot meet the processing technology requirement; on the other hand, in the prior art, the output power of the second rf power supply of each chamber is consistent by calibrating the consistency of the output power, but the output power is not equal to the plasma power utilized by the semiconductor device in the etching process, so that even if the output power of each chamber is consistent, the consistency of the plasma power utilized by the semiconductor device cannot be ensured, and further, the process consistency of the semiconductor device cannot be ensured.

Disclosure of Invention

The purpose of the present application is to at least solve one of the above technical drawbacks, and the technical solutions provided in the embodiments of the present application are as follows:

in a first aspect, an embodiment of the present application provides a method for processing a semiconductor device, including:

Monitoring the surface optical property variation and/or the electrical property variation of the semiconductor device of each reaction chamber after the semiconductor device processing is started;

acquiring plasma densities at specified locations near the semiconductor devices in each reaction chamber and acquiring target plasma densities based on each plasma density before the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into a semiconductor etching stage;

for each reaction chamber, inputting the target plasma density into a first output power prediction model, outputting a first target output power, and adjusting the output power of a first radio frequency power supply of the reaction chamber to the first target output power; the first radio frequency power supply is used for generating and maintaining plasma; the first output power prediction model is obtained through training of a first sample, wherein the first sample comprises a plasma density sample and a corresponding first output power sample;

after the surface optical property variation and/or the electrical property variation indicate that the batch of semiconductor devices are processed into a semiconductor etching stage, acquiring plasma power at a designated position of the semiconductor devices in each reaction chamber, and acquiring target plasma power based on each plasma power;

Inputting target plasma power into a second output power prediction model for each reaction chamber, outputting second target output power, and adjusting the output power of a second radio frequency power supply of the reaction chamber to the second target output power so as to finish etching processing of semiconductor devices in the reaction chamber; the second radio frequency power supply is used for controlling the energy of the plasma acted on the semiconductor device; the second output power prediction model is trained by a second sample comprising a plasma power sample and a corresponding second output power sample.

In an alternative embodiment of the present application, obtaining a target plasma density based on each plasma density includes:

determining a plasma density threshold corresponding to etching processing of the semiconductor device according to the process requirements of the semiconductor device;

and averaging the plasma density which is not smaller than the plasma density threshold value in each plasma density to obtain the target plasma density.

In an alternative embodiment of the present application, acquiring plasma power at a specified location of a semiconductor device in each reaction chamber comprises:

for each reaction chamber, measuring and acquiring first plasma power at a designated position through a power meter arranged at the designated position, calculating and acquiring second plasma power at the designated position through plasma characteristic parameters at the designated position, and acquiring third plasma power at the designated position through simulating plasma in the reaction chamber;

Corresponding weights are respectively set for the first plasma power, the second plasma power and the third plasma power, and the first plasma power, the second plasma power and the third plasma power are weighted and summed based on the weights to obtain the plasma power at the designated position.

In an alternative embodiment of the present application, obtaining a target plasma power based on each plasma power includes:

determining a plasma power threshold corresponding to etching processing of the semiconductor device according to the process requirements of the semiconductor device;

and averaging the plasma power which is not smaller than the plasma power threshold value in the plasma power to obtain target plasma power.

In an alternative embodiment of the present application, the method further comprises:

for each reaction chamber, if the surface optical characteristic variation of the semiconductor device is not smaller than a preset threshold value and/or the electrical characteristic variation is not smaller than a preset threshold value, determining that the reaction chamber enters a semiconductor etching stage;

if the number of the reaction chambers is not smaller than the first preset number, the batch of semiconductor devices are determined to be processed into the semiconductor etching stage, and the reaction chambers which do not enter the semiconductor etching stage are indicated to be stopped for maintenance.

In an alternative embodiment of the present application, a first output power threshold of the first rf power supply is determined according to a process requirement of the semiconductor device, where the first output power threshold is a minimum output power for exciting and generating plasma in the corresponding reaction chamber;

acquiring a second preset number of first samples, wherein a first output power sample in the first samples is not smaller than a first output power threshold value, and a plasma density sample corresponding to the first output power sample in the first samples is obtained through plasma simulation in a reaction chamber;

training the initial first output power prediction model by using a second preset number of first samples to obtain a first output power prediction model.

and before the change in the surface optical characteristic and/or the change in the electrical characteristic indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, indicating that the reaction chamber with the plasma density less than the plasma density threshold is shut down for maintenance.

after the surface optical property change and/or the electrical property change indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, a reaction chamber with the plasma power less than the plasma power threshold is indicated to be shut down for maintenance.

In a second aspect, embodiments of the present application provide a semiconductor device processing system, including:

the semiconductor device monitoring module is used for monitoring the surface optical property variation and/or the electrical property variation of the semiconductor device of each reaction chamber after the semiconductor device processing is started;

a target plasma density acquisition module for acquiring plasma densities at specified positions near the semiconductor devices in each reaction chamber and acquiring target plasma densities based on each plasma density before the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into the semiconductor etching stage;

the first target output power adjustment module is used for inputting the target plasma density into the first output power prediction model for each reaction chamber, outputting the first target output power and adjusting the output power of the first radio frequency power supply of the reaction chamber to the first target output power; the first radio frequency power supply is used for generating and maintaining plasma; the first output power prediction model is obtained through training of a first sample, wherein the first sample comprises a plasma density sample and a corresponding first output power sample;

A target plasma power acquisition module for acquiring plasma power at a designated position of the semiconductor device in each reaction chamber after the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices are processed into a semiconductor etching stage, and acquiring target plasma power based on each plasma power;

the second target output power adjusting module is used for inputting target plasma power into the second output power prediction model for each reaction chamber, outputting second target output power, and adjusting the output power of a second radio frequency power supply of the reaction chamber to the second target output power so as to finish etching processing of semiconductor devices in the reaction chamber; the second radio frequency power supply is used for controlling the energy of the plasma acted on the semiconductor device; the second output power prediction model is trained by a second sample comprising a plasma power sample and a corresponding second output power sample.

In an alternative embodiment of the present application, the target plasma density acquisition module is specifically configured to:

In an alternative embodiment of the present application, the target plasma power acquisition module is specifically configured to:

In an alternative embodiment of the present application, the semiconductor device monitoring module is specifically configured to:

In an alternative embodiment of the present application, the system further comprises a training module for:

determining a first output power threshold of a first radio frequency power supply according to the process requirements of the semiconductor device, wherein the first output power threshold is the minimum output power for exciting and generating plasma in a corresponding reaction chamber;

In an alternative embodiment of the present application, the target plasma density acquisition module is further configured to:

In an alternative embodiment of the present application, the target plasma power acquisition module is further configured to:

In a third aspect, embodiments of the present application provide an electronic device including a memory and a processor;

a memory having a computer program stored therein;

a processor for executing a computer program to implement the method provided in the first aspect embodiment or any of the alternative embodiments of the first aspect.

In a fourth aspect, embodiments of the present application provide a computer readable storage medium having a computer program stored thereon, which when executed by a processor implements the method provided in the embodiment of the first aspect or any of the alternative embodiments of the first aspect.

In a fifth aspect, embodiments of the present application provide a computer program product or computer program comprising computer instructions stored in a computer readable storage medium. The computer instructions are read from a computer readable storage medium by a processor of a computer device, which processor executes the computer instructions such that the computer device, when executed, implements the method provided in the embodiment of the first aspect or any alternative embodiment of the first aspect.

The beneficial effects that technical scheme that this application embodiment provided brought are:

before entering a semiconductor etching stage, acquiring a target plasma density based on the plasma density of each chamber at a designated position near the semiconductor device, taking the target plasma density as a reference standard and considering the current plasma temperature, and adjusting the output power of a first radio frequency power supply by using a network model. In a word, when the radio frequency power supply is adjusted and calibrated, the selection mode of the reference standard and the specific content of the reference standard are different from those of the prior art, so that the problem that the processing technology requirement of the semiconductor device cannot be met due to the selection mode of the reference standard is avoided, the problem that the plasma power utilized by the semiconductor device in each cavity in the processing process of the semiconductor device cannot be guaranteed to be inconsistent in the prior art is overcome, and the process consistency of the semiconductor device can be guaranteed better.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments of the present application will be briefly described below.

Fig. 1 is a system architecture diagram on which a semiconductor device processing method according to an embodiment of the present application depends;

fig. 2 is a schematic flow chart of a method for processing a semiconductor device according to an embodiment of the present application;

fig. 3 is a block diagram of a semiconductor device processing system according to an embodiment of the present disclosure;

fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

Detailed Description

Embodiments of the present application are described below with reference to the drawings in the present application. It should be understood that the embodiments described below with reference to the drawings are exemplary descriptions for explaining the technical solutions of the embodiments of the present application, and the technical solutions of the embodiments of the present application are not limited.

As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and "comprising," when used in this application, specify the presence of stated features, information, data, steps, operations, elements, and/or components, but do not preclude the presence or addition of other features, information, data, steps, operations, elements, components, and/or groups thereof, all of which may be included in the present application. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein indicates that at least one of the items defined by the term, e.g., "a and/or B" may be implemented as "a", or as "B", or as "a and B".

For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

At present, in the process of manufacturing/processing semiconductor devices in batches, a plurality of machines respectively process semiconductor devices of the same model, so as to ensure the process consistency of the final semiconductor devices, in the process consistency control process, the control of the power output power is very critical. As described above, in the prior art, during the semiconductor etching stage, the output power of the second rf power source of each chamber is adjusted to be the same by selecting the reference chamber, so as to obtain the process uniformity of the semiconductor device of each chamber. However, as described above, the reference obtaining method and the specific content of the reference used in calibrating the output power of each chamber in the prior art cannot ensure the process consistency of each semiconductor device. Accordingly, in view of the above-described problems, embodiments of the present application provide a new semiconductor device processing scheme, which will be described in detail below.

Fig. 1 is a system architecture diagram on which implementation of a semiconductor device processing method according to an embodiment of the present application depends, as shown in fig. 1, the system may include an upper computer 101, and a control unit 102 and an acquisition unit 103 that are communicatively connected to the upper computer 101, where the control unit 102 and the acquisition unit 103 are respectively communicatively connected to each machine on a production line. The collection unit 103 is used for collecting data (such as plasma density, plasma power, etc.) of various sensors in the reaction chamber of the plasma processing apparatus in the machine, and reporting the data to the host computer 101. The control unit 102 is configured to receive various control instructions sent by the host computer 101, and send the control instructions to each machine, and is configured to control process parameters of each machine, etc. In this embodiment, after the processing of the semiconductor device is started, the upper computer 101 sends an instruction for collecting the optical characteristics and/or the electrical characteristics of the surface of the semiconductor device in the reaction chamber to the collection unit 103, and analyzes the change amount of the optical characteristics and/or the change amount of the electrical characteristics of the surface of the semiconductor device to determine the processing stage of the semiconductor device, and executes different processing methods at different stages. Specifically, before the host computer 101 determines that the batch of semiconductor devices is processed into the semiconductor etching stage, the collection unit 103 is instructed to collect plasma densities at designated positions in the chambers, determine target plasma densities based on the plasma densities, further predict the first target output power of the first rf power source by using a preset model, and instruct the control unit 102 to control the first rf power source of each chamber to adjust to the corresponding first target output power. After the host computer 101 determines that the batch of semiconductor devices is processed into the semiconductor etching stage, the collection unit 102 is instructed to collect plasma power at a designated position in the chamber, determine target plasma power based on each plasma power, further predict a second target output power of the second rf power source by using a preset model, and instruct the control unit 102 to control the second rf power source of each chamber to adjust to the corresponding second target output power. The steps of this scheme will be described in detail below.

Fig. 2 is a schematic flow chart of a method for processing a semiconductor device according to an embodiment of the present application, as shown in fig. 2, the method may include:

in step S201, after the semiconductor device processing is started, the amount of change in the optical characteristics and/or the amount of change in the electrical characteristics of the surface of the semiconductor device in each reaction chamber is monitored.

In the process of processing the semiconductor device, the optical characteristics of the surface of the semiconductor device are changed and the electrical characteristics of the semiconductor device are changed due to the action of the plasma, so that the generation condition of the plasma in the reaction chamber can be determined by collecting data of the two aspects, and the processing stage of the semiconductor device is further determined.

Specifically, the effect of the plasma on the semiconductor device can result in changes in the electrical characteristics of the semiconductor device, including changes in carrier concentration, carrier mobility, and resistivity. Therefore, parameters such as carrier concentration, carrier mobility, resistivity and the like of the semiconductor device can be continuously collected, the variation of the parameters at different moments is compared, and when the variation reaches a certain value, the completion of the excitation of the plasma can be determined, and the semiconductor etching stage is entered. The effect of the plasma on the semiconductor device can also result in changes in the optical properties of the semiconductor device surface, including changes in the surface reflectivity. Therefore, the reflectivity parameters of the surface of the semiconductor device can be continuously collected, the variation of the reflectivity at different moments is compared, and when the variation reaches a certain value, the completion of the excitation of the plasma can be determined, and the semiconductor etching stage is entered. It is understood that the "certain value" reached by the above-mentioned variation is a critical index for switching the processing stage, and may be determined according to experimental tests or simulations. Meanwhile, in the embodiment of the application, the change amount of the electrical characteristic of the semiconductor device can be used for judging whether to enter the semiconductor etching stage, the change amount of the optical characteristic of the semiconductor device can be used for judging whether to enter the semiconductor etching stage, and the change amount of the optical characteristic of the semiconductor device can be used for judging in combination.

Specifically, a hall effect measurement system for the semiconductor device can be arranged in the reaction chamber, and the hall effect measurement system is combined with the electric measurement system, so that parameters such as carrier concentration, mobility, resistivity and the like of the semiconductor device can be measured simultaneously, and data can be provided for determining the change amount of the electric characteristics of the semiconductor device. An optical sensor for the semiconductor device may be disposed within the reaction chamber to provide data for determining an amount of change in the optical characteristic of the semiconductor device. For example, the following sensors, photoresistors, may be employed: the light intensity change of the surface of the semiconductor device can be measured to reflect the light reflectivity change of the surface of the semiconductor device; photodiode: the light source is used for converting the light signals into electric signals, and can measure the illumination intensity change of the surface of the semiconductor device and reflect the light reflectivity change of the surface of the semiconductor device; optical fiber sensor: the optical signal of the semiconductor device is transmitted by the optical fiber, and the change of the reflectivity can be detected at the receiving end of the optical fiber.

By monitoring the optical characteristic variation and/or the electrical characteristic variation of the surface of the semiconductor device to determine whether the semiconductor device enters the semiconductor etching stage, the output power adjustment of the first radio frequency power supply and the output power adjustment of the second radio frequency power supply of the reaction chamber can be distinguished at different times, the accuracy of the output power adjustment of the radio frequency power supply in the reaction chamber can be improved, and the processing consistency of the semiconductor device can be improved.

Step S202, before the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, plasma densities at specified positions near the semiconductor devices in each reaction chamber are acquired, and a target plasma density is acquired based on each plasma density.

Wherein before the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, i.e. the reaction chamber is in a plasma excitation stage, the output power of the first rf power source for plasma excitation in each chamber needs to be adjusted or calibrated so that the density of the plasma generated in each chamber is consistent at a specified location near the semiconductor devices.

The selection principle of the designated position is that parameters such as plasma density and plasma power at the designated position are as close as possible to the plasma density and plasma power at the surface of the semiconductor device, for example, the parameters can be a preset distance right above the surface of the semiconductor device, or can be a preset distance away from the center of the semiconductor device in the same plane as the surface of the semiconductor device, and the selection of the designated position can be determined by combining the size parameters of the semiconductor device and related simulation experiments.

Specifically, before the semiconductor device does not enter the semiconductor etching stage, the plasma density at the designated position in each reaction chamber is obtained, and then the plurality of plasma densities are screened and processed to obtain the final target plasma density, wherein the target plasma density is the plasma density which needs to be achieved by each reaction chamber, namely, the target plasma density is taken as a reference standard, so that the plasma density of each reaction chamber at the designated position is consistent.

Specifically, an electron probe, a capacitive sensor, a microwave interferometer, a raman scattering spectrometer, or the like may be used to measure the plasma density at a specified location.

Step S203, for each reaction chamber, inputting the target plasma density into a first output power prediction model, outputting a first target output power, and adjusting the output power of a first radio frequency power supply of the reaction chamber to the first target output power; the first radio frequency power supply is used for generating and maintaining plasma; the first output power prediction model is trained from first samples including plasma density samples and corresponding first output power samples.

The plasma processing device in the processing machine adopted in the embodiment of the application may be a dual-frequency coupled plasma processing device, which includes two rf power sources, namely a first rf power source for plasma excitation and maintenance, and a second rf power source for plasma energy control. Before semiconductor workpiece processing enters semiconductor etching, attention needs to be paid to the excitation condition of plasma, that is, to the density of plasma so that the plasma density at a specified position in each chamber is uniform.

Specifically, after the target plasma density is determined according to the plasma density of each chamber at the designated position, the adjustment of the plasma density of each chamber at the designated position needs to be performed by taking the target plasma density as a reference, and in the embodiment of the application, the adjustment of the plasma density of the corresponding chamber at the designated position to the target plasma density by adjusting the output power of the first rf power supply is mainly considered, and then the process can be understood as adjusting the output power of the first rf power supply of each chamber by taking the target plasma density as a reference.

For each reaction chamber, the density of the plasma is affected by the rf power (output power of the first rf power supply), the gas species and pressure, the plasma temperature, and the geometry of the reaction chamber, which may be considered to be uniform from chamber to chamber, and thus the first target output power required for the target plasma density may be predicted by the first output power prediction model at different temperatures. Specifically, first output power prediction models corresponding to different temperature ranges can be set, and a plurality of first output power models are obtained. Then, for each chamber, the current plasma temperature in the chamber (or the plasma temperature at the designated position) is acquired, then a first output power prediction model corresponding to the temperature range of the chamber is selected according to the current plasma temperature, then the target plasma density is used as the first output power prediction model, the corresponding first target output power can be output, and finally the output power of the first target output power is adjusted to the first target output power by adjusting the first radio frequency power supply. The above operation is performed for each chamber, and thus the consistency calibration of the first radio frequency power is completed.

It will be appreciated that, since there may be a difference in the current plasma temperature between different chambers, the first output power models selected by the different chambers may be different, and thus the first target output power of the first rf power source of each chamber obtained based on the target plasma density may be different, and thus the uniformity calibration of the first rf power source power in the embodiment of the present application is significantly different from the prior art, as described above, the difference mainly represents that the reference standard adopted in the embodiment of the present application is the target plasma density, and the influence of the plasma temperature is considered, but the present application can ensure that the plasma density at the designated position near the semiconductor device of each chamber is uniform before entering the plasma etching stage.

It should be noted that, in order to ensure consistency of plasma density after entering the semiconductor etching stage as much as possible, the output power of the first rf power supply of each chamber may be adjusted multiple times by the above adjustment method, and the specific adjustment times and time intervals are not limited in the embodiments of the present application.

The output power of the first radio frequency power supply of each chamber is adjusted by taking the target plasma density at the designated position near the semiconductor device as a reference standard before the batch of semiconductor devices is processed into the semiconductor etching stage, so that the consistency of the plasma density at the designated position near the semiconductor device of each chamber is ensured, a basis is provided for adjusting the plasma power at the designated position after the batch of semiconductor devices is processed into the semiconductor etching stage, and further, the process consistency of the semiconductor device processing is ensured.

In step S204, after the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, plasma power at a specified position of the semiconductor devices in each reaction chamber is obtained, and a target plasma power is obtained based on each plasma power.

After the surface optical characteristic variation and/or the electrical characteristic variation indicate that the batch of semiconductor devices is processed into a semiconductor etching stage, the output power of a second radio frequency power supply for controlling the plasma energy in each chamber needs to be adjusted or calibrated at the stage, so that the power of the plasma in each chamber at a designated position near the semiconductor is kept consistent, and the consistency of the etching processing process of the semiconductor devices is further ensured.

Specifically, after the semiconductor device enters a semiconductor time stage, plasma power at a designated position in each reaction chamber is obtained, and then the plurality of plasma powers are screened and processed to obtain final target plasma power, wherein the target plasma power is the plasma power which needs to be reached by each reaction chamber, namely, the target plasma power is taken as a reference standard, so that the plasma power of each reaction chamber at the designated position is consistent.

Specifically, the plasma power at the specified position may be measured using a power meter, the plasma power may be calculated by measuring the plasma characteristic parameter at the specified position, and the plasma power may be obtained by a simulation.

Step S205, for each reaction chamber, inputting the target plasma power into a second output power prediction model, outputting a second target output power, and adjusting the output power of a second radio frequency power supply of the reaction chamber to the second target output power to finish etching processing of the semiconductor device in the reaction chamber; the second radio frequency power supply is used for controlling the energy of the plasma acted on the semiconductor device; the second output power prediction model is trained by a second sample comprising a plasma power sample and a corresponding second output power sample.

Wherein after the semiconductor workpiece is processed into the semiconductor etch, attention is paid to the plasma power utilized by the semiconductor so that the plasma power at the designated location in each chamber is uniform.

Specifically, after determining the target plasma power according to the plasma power of each chamber at the designated position, the adjustment of the plasma power of each chamber at the designated position needs to be performed by taking the target plasma power as a reference, while in the embodiment of the application, the adjustment of the plasma power of the corresponding chamber at the designated position to the target plasma power by adjusting the output power of the second rf power is mainly considered, and then the process can be understood as adjusting the output power of the first rf power of each chamber by taking the target plasma power as a reference.

For each reaction chamber, the power of the plasma is affected by the rf power (output power of the second rf power supply), the gas species and pressure, the plasma density, the plasma temperature, and the geometry of the reaction chamber, which can be considered to be uniform from chamber to chamber, while the plasma density has been adjusted consistently in the last processing stage, so that the second target output power required for the target plasma power can be predicted by the second output power prediction model at a different temperature. Specifically, second output power prediction models corresponding to different temperature ranges can be set, and a plurality of second output power models are obtained. Then, for each chamber, the current plasma temperature in the chamber (or the plasma temperature at the designated position) is acquired, then a second output power prediction model corresponding to the temperature range of the chamber is selected according to the current plasma temperature, then the target plasma power is used as the second output power prediction model, the corresponding second target output power can be output, and finally the output power of the second target output power is adjusted to the second target output power by adjusting the second radio frequency power supply. The above operation is performed for each chamber, and the consistency calibration of the second radio frequency power is completed.

It may be appreciated that, since the current plasma temperatures may be different between different chambers, the second output power models selected by the different chambers may be different, and thus the second target output powers of the second rf power supplies of the respective chambers obtained based on the target plasma powers may be different, and thus the uniformity calibration of the second rf power supplies in the embodiments of the present application may be significantly different from the prior art, as described above, the differences mainly represent that the reference standard adopted in the embodiments of the present application is the target plasma power, and the influence of the plasma temperature is considered, but the present application can ensure that the plasma powers at the designated positions near the semiconductor devices of the respective chambers are uniform after entering the plasma etching stage.

It should be noted that, in order to ensure the consistency of the plasma power after entering the semiconductor etching stage as much as possible, the output power of the second rf power supply of each chamber may be adjusted multiple times by the above adjustment method, and the specific adjustment times and time intervals are not specifically limited in the embodiments of the present application.

It should be noted that, in the embodiment of the present application, the first output power prediction model and the second output power prediction model may be constructed based on a neural network such as a feedforward neural network (Feedforward Neural Network), a recurrent neural network (Recurrent Neural Network, RNN), and the like.

According to the scheme, before the semiconductor etching stage is entered, the target plasma density is obtained based on the plasma density of each chamber at the designated position near the semiconductor device, the output power of the first radio frequency power supply is adjusted by using the target plasma density as a reference standard and considering the current plasma temperature through the network model, the plasma density at the designated position of each chamber is consistent by adjusting the output power of the first radio frequency power supply of each chamber in the process, after the semiconductor etching stage is entered, the target plasma power is obtained based on the plasma power of each chamber at the designated position near the semiconductor device, the output power of the second radio frequency power supply is adjusted by using the network model by using the target plasma power as the reference standard and considering the current plasma temperature, and the plasma power at the designated position of each chamber is consistent by adjusting the output power of the second radio frequency power supply of each chamber in the process, so that the process consistency of a final semiconductor workpiece is ensured. In a word, when the radio frequency power supply is adjusted and calibrated, the selection mode of the reference standard and the specific content of the reference standard are different from those of the prior art, so that the problem that the processing technology requirement of the semiconductor device cannot be met due to the selection mode of the reference standard is avoided, the problem that the plasma power utilized by the semiconductor device in each cavity in the processing process of the semiconductor device cannot be guaranteed to be inconsistent in the prior art is overcome, and the process consistency of the semiconductor device can be guaranteed better.

Specifically, a minimum plasma density, i.e., a plasma density threshold, at the time of etching processing is obtained according to the process requirements of the semiconductor device being processed. Before the surface optical property variation and/or the electrical property variation indicate that the batch of semiconductor devices is processed into a semiconductor etching stage, plasma density at a specified position near the semiconductor devices in each reaction chamber is obtained, and then the plasma density corresponding to each chamber is screened by utilizing the plasma density threshold value. Specifically, each plasma density not smaller than the plasma density threshold is retained, and each of the retained plasma densities is averaged, and the obtained average value is used as the final target plasma density.

Further, for each plasma density less than the plasma density threshold, a shutdown service indication is sent to the chambers.

Specifically, the minimum plasma power, i.e., the plasma power threshold, during the etching process is obtained according to the process requirements of the semiconductor device being processed. After the surface optical characteristic variation and/or the electrical characteristic variation indicate that the batch of semiconductor devices is processed into a semiconductor etching stage, plasma power at a designated position near the semiconductor devices in each reaction chamber is acquired, and then the plasma power threshold is used for screening the corresponding plasma power of each chamber. Specifically, each plasma power not smaller than the plasma power threshold is held, each of the held plasma powers is averaged, and the resulting average value is used as the final target plasma power.

Further, for each plasma power less than the plasma power threshold, a shutdown service indication is sent to the chambers.

In particular, there are several ways to obtain the plasma power at a given location in the reaction chamber, but there may be corresponding errors in different ways, so the data obtained in various ways may be weighted and summed to obtain a more accurate plasma power.

In an alternative embodiment of the present application, the method may further include:

The time nodes at which different reaction chambers enter the semiconductor etching stage may be different, and it may be determined that the processing of the batch of semiconductor devices enters the semiconductor etching stage only after no less than a first predetermined number of reaction chambers enter the semiconductor etching stage.

The first preset number may be set according to actual requirements, which is not limited in this embodiment of the present application.

In an alternative embodiment of the present application, the first output power prediction model is trained by:

determining a first output power threshold of the first radio frequency power supply according to the process requirements of the semiconductor device, wherein the first output power threshold is the minimum output power for exciting and generating plasma in a corresponding reaction chamber;

Acquiring a second preset number of first samples, wherein a first output power sample in the first samples is not smaller than the first output power threshold value, and a plasma density sample corresponding to the first output power sample in the first samples is obtained through plasma simulation in the reaction chamber;

training an initial first output power prediction model by using the second preset number of first samples to obtain the first output power prediction model.

Specifically, when the first sample is obtained, parameters such as corresponding radio frequency power (output power of the first radio frequency power supply), gas type and pressure, plasma temperature, geometry of the reaction chamber and the like can be obtained, and the reaction chamber environment is simulated to obtain the first output power sample and the plasma density sample. For a prediction model in a certain temperature range, a first output power threshold value in the temperature range is firstly determined, then a first output power sample larger than the first output power threshold value is selected, and then parameters such as gas type, pressure, geometry of a reaction chamber and the like are combined for simulation, so that a corresponding plasma power sample is obtained. According to the method, a plurality of first samples in the temperature range are obtained, and the initial first output power prediction model in the temperature range is trained by using the plurality of first samples, so that the first output power prediction model corresponding to the temperature range can be obtained. The first output power threshold is set, so that the acquired first output power sample can excite the plasma in the simulation, and the effectiveness of the first sample is ensured.

It will be appreciated that the second output power prediction model may be obtained in a training manner similar to the first output power prediction model, but the second output power threshold may not be set when the corresponding second sample is obtained. The specific training process is not described in detail herein.

Fig. 3 is a block diagram illustrating a semiconductor device processing system, and as shown in fig. 3, the system 300 may include: a semiconductor device monitoring module 301, a target plasma density acquisition module 302, a first target output power adjustment module 303, a target plasma power acquisition module 304, and a second target output power adjustment module 305, wherein:

the semiconductor device monitoring module 301 is configured to monitor a change amount of optical characteristics and/or a change amount of electrical characteristics of a surface of the semiconductor device of each reaction chamber after the semiconductor device processing is started;

the target plasma density acquisition module 302 is configured to acquire plasma densities at specified positions near the semiconductor devices in each reaction chamber before the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, and acquire target plasma densities based on each plasma density;

The first target output power adjustment module 303 is configured to input the target plasma density into the first output power prediction model for each reaction chamber, output a first target output power, and adjust the output power of the first rf power supply of the reaction chamber to the first target output power; the first radio frequency power supply is used for generating and maintaining plasma; the first output power prediction model is obtained through training of a first sample, wherein the first sample comprises a plasma density sample and a corresponding first output power sample;

the target plasma power acquisition module 304 is configured to acquire plasma powers at specified positions of semiconductor devices in each reaction chamber after the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, and acquire target plasma powers based on each plasma power;

the second target output power adjustment module 305 is configured to input a target plasma power into the second output power prediction model for each reaction chamber, output a second target output power, and adjust the output power of the second rf power supply of the reaction chamber to the second target output power, so as to complete etching processing of the semiconductor device in the reaction chamber; the second radio frequency power supply is used for controlling the energy of the plasma acted on the semiconductor device; the second output power prediction model is trained by a second sample comprising a plasma power sample and a corresponding second output power sample.

Referring now to fig. 4, a schematic diagram of a configuration of an electronic device 400 (e.g., a terminal device or server performing the method of fig. 2) suitable for use in implementing embodiments of the present application is shown. The electronic devices in the embodiments of the present application may include, but are not limited to, mobile terminals such as mobile phones, notebook computers, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), in-vehicle terminals (e.g., in-vehicle navigation terminals), wearable devices, and the like, and stationary terminals such as digital TVs, desktop computers, and the like. The electronic device shown in fig. 4 is only an example and should not be construed as limiting the functionality and scope of use of the embodiments herein.

An electronic device includes: the memory is used for storing programs for executing the methods according to the method embodiments; the processor is configured to execute a program stored in the memory. Herein, the processor may be referred to as a processing device 401 described below, and the memory may include at least one of a Read Only Memory (ROM) 402, a Random Access Memory (RAM) 403, and a storage device 408, which are specifically shown below:

as shown in fig. 4, the electronic device 400 may include a processing means (e.g., a central processing unit, a graphics processor, etc.) 401, which may perform various suitable actions and processes according to a program stored in a Read Only Memory (ROM) 402 or a program loaded from a storage means 408 into a Random Access Memory (RAM) 403. In the RAM403, various programs and data necessary for the operation of the electronic device 400 are also stored. The processing device 401, the ROM 402, and the RAM403 are connected to each other by a bus 404. An input/output (I/O) interface 405 is also connected to bus 404.

In general, the following devices may be connected to the I/O interface 405: input devices 406 including, for example, a touch screen, touchpad, keyboard, mouse, camera, microphone, accelerometer, gyroscope, etc.; an output device 407 including, for example, a Liquid Crystal Display (LCD), a speaker, a vibrator, and the like; storage 408 including, for example, magnetic tape, hard disk, etc.; and a communication device 409. The communication means 409 may allow the electronic device 400 to communicate with other devices wirelessly or by wire to exchange data. While fig. 4 shows an electronic device having various means, it is to be understood that not all of the illustrated means are required to be implemented or provided. More or fewer devices may be implemented or provided instead.

In particular, according to embodiments of the present application, the processes described above with reference to flowcharts may be implemented as computer software programs. For example, embodiments of the present application include a computer program product comprising a computer program embodied on a non-transitory computer readable medium, the computer program comprising program code for performing the method shown in the flow chart. In such an embodiment, the computer program may be downloaded and installed from a network via communications device 409, or from storage 408, or from ROM 402. The above-described functions defined in the methods of the embodiments of the present application are performed when the computer program is executed by the processing means 401.

It should be noted that the computer readable storage medium described in the present application may be a computer readable signal medium or a computer readable storage medium, or any combination of the two. The computer readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples of the computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of this document, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. In the present application, however, a computer-readable signal medium may include a data signal that propagates in baseband or as part of a carrier wave, with the computer-readable program code embodied therein. Such a propagated data signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination of the foregoing. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to: electrical wires, fiber optic cables, RF (radio frequency), and the like, or any suitable combination of the foregoing.

In some implementations, the clients, servers may communicate using any currently known or future developed network protocol, such as HTTP (HyperText Transfer Protocol ), and may be interconnected with any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include a local area network ("LAN"), a wide area network ("WAN"), the internet (e.g., the internet), and peer-to-peer networks (e.g., ad hoc peer-to-peer networks), as well as any currently known or future developed networks.

The computer readable medium may be contained in the electronic device; or may exist alone without being incorporated into the electronic device.

The computer readable medium carries one or more programs which, when executed by the electronic device, cause the electronic device to:

monitoring the surface optical property variation and/or the electrical property variation of the semiconductor device of each reaction chamber after the semiconductor device processing is started; acquiring plasma densities at specified locations near the semiconductor devices in each reaction chamber and acquiring target plasma densities based on each plasma density before the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into a semiconductor etching stage; for each reaction chamber, inputting the target plasma density into a first output power prediction model, outputting a first target output power, and adjusting the output power of a first radio frequency power supply of the reaction chamber to the first target output power; the first radio frequency power supply is used for generating and maintaining plasma; the first output power prediction model is obtained through training of a first sample, wherein the first sample comprises a plasma density sample and a corresponding first output power sample; after the surface optical property variation and/or the electrical property variation indicate that the batch of semiconductor devices are processed into a semiconductor etching stage, acquiring plasma power at a designated position of the semiconductor devices in each reaction chamber, and acquiring target plasma power based on each plasma power; inputting target plasma power into a second output power prediction model for each reaction chamber, outputting second target output power, and adjusting the output power of a second radio frequency power supply of the reaction chamber to the second target output power so as to finish etching processing of semiconductor devices in the reaction chamber; the second radio frequency power supply is used for controlling the energy of the plasma acted on the semiconductor device; the second output power prediction model is trained by a second sample comprising a plasma power sample and a corresponding second output power sample.

Computer program code for carrying out operations of the present application may be written in one or more programming languages, including, but not limited to, an object oriented programming language such as Java, smalltalk, C ++ and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computer (for example, through the Internet using an Internet service provider).

The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.

The modules or units involved in the embodiments of the present application may be implemented by software, or may be implemented by hardware. Where the name of the module or unit does not constitute a limitation of the unit itself in some cases, for example, the first constraint acquisition module may also be described as "a module that acquires the first constraint".

The functions described above herein may be performed, at least in part, by one or more hardware logic components. For example, without limitation, exemplary types of hardware logic components that may be used include: a Field Programmable Gate Array (FPGA), an Application Specific Integrated Circuit (ASIC), an Application Specific Standard Product (ASSP), a system on a chip (SOC), a Complex Programmable Logic Device (CPLD), and the like.

In the context of this application, a machine-readable medium may be a tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. The machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. The machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

Embodiments of the present application provide a computer program product or computer program comprising computer instructions stored in a computer readable storage medium. The processor of the computer device reads the computer instructions from the computer readable storage medium, and the processor executes the computer instructions such that the computer device performs:

It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited in order and may be performed in other orders, unless explicitly stated herein. Moreover, at least some of the steps in the flowcharts of the figures may include a plurality of sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order of their execution not necessarily being sequential, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.

The foregoing is only a partial embodiment of the present invention, and it should be noted that it will be apparent to those skilled in the art that modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.

Claims

1. A method of processing a semiconductor device, comprising:

for each reaction chamber, inputting the target plasma density into a first output power prediction model, outputting a first target output power, and adjusting the output power of a first radio frequency power supply of the reaction chamber to the first target output power; the first radio frequency power supply is used for generating and maintaining plasma; the first output power prediction model is obtained through first sample training, and the first sample comprises a plasma density sample and a corresponding first output power sample;

after the surface optical property variation and/or the electrical property variation indicate that the batch of semiconductor devices is processed into a semiconductor etching stage, acquiring plasma power at the designated position of the semiconductor devices in each reaction chamber, and acquiring target plasma power based on each plasma power;

inputting the target plasma power into a second output power prediction model for each reaction chamber, outputting a second target output power, and adjusting the output power of a second radio frequency power supply of the reaction chamber to the second target output power so as to finish etching processing of semiconductor devices in the reaction chamber; the second radio frequency power supply is used for controlling the energy of plasma acted on the semiconductor device; the second output power prediction model is obtained through training of a second sample, and the second sample comprises a plasma power sample and a corresponding second output power sample.

2. The method of claim 1, wherein said obtaining a target plasma density based on each plasma density comprises:

determining a plasma density threshold corresponding to etching of the semiconductor device according to the process requirements of the semiconductor device;

3. The method of claim 1, wherein said deriving plasma power at a designated location of the semiconductor device in each reaction chamber comprises:

for each reaction chamber, measuring and acquiring first plasma power at the designated position through a power meter arranged at the designated position, calculating and acquiring second plasma power at the designated position through plasma characteristic parameters at the designated position, and acquiring third plasma power at the designated position through simulation of plasma in the reaction chamber;

and respectively setting corresponding weights for the first plasma power, the second plasma power and the third plasma power, and carrying out weighted summation on the first plasma power, the second plasma power and the third plasma power based on the weights to obtain the plasma power at the appointed position.

4. A method according to claim 1 or 3, wherein said obtaining a target plasma power based on each plasma power comprises:

determining a plasma power threshold corresponding to the etching processing of the semiconductor device according to the process requirement of the semiconductor device;

and averaging the plasma power which is not smaller than the plasma power threshold in each plasma power to obtain the target plasma power.

5. The method according to claim 1, wherein the method further comprises:

6. The method of claim 1, wherein the first output power prediction model is trained by:

7. The method according to claim 2, wherein the method further comprises:

and before the surface optical property variation and/or the electrical property variation indicate that the batch of semiconductor devices is processed into a semiconductor etching stage, indicating that the reaction chamber with the plasma density less than the plasma density threshold is shut down for maintenance.

8. The method according to claim 4, wherein the method further comprises:

and after the surface optical property variation and/or the electrical property variation indicate that the batch of semiconductor devices are processed into a semiconductor etching stage, indicating that the reaction chamber with the plasma power smaller than the plasma power threshold is shut down for maintenance.

9. A semiconductor device processing system, comprising:

a target plasma density acquisition module for acquiring plasma densities at specified locations near the semiconductor devices in each reaction chamber and acquiring target plasma densities based on each plasma density before the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into a semiconductor etching stage;

the first target output power adjustment module is used for inputting the target plasma density into a first output power prediction model for each reaction chamber, outputting first target output power, and adjusting the output power of a first radio frequency power supply of the reaction chamber to the first target output power; the first radio frequency power supply is used for generating and maintaining plasma; the first output power prediction model is obtained through first sample training, and the first sample comprises a plasma density sample and a corresponding first output power sample;

A target plasma power acquisition module, configured to acquire plasma power at the specified position of the semiconductor device in each reaction chamber after the surface optical property variation and/or the electrical property variation indicates that the batch of semiconductor devices is processed into the semiconductor etching stage, and acquire target plasma power based on each plasma power;

the second target output power adjustment module is used for inputting the target plasma power into a second output power prediction model for each reaction chamber, outputting second target output power, and adjusting the output power of a second radio frequency power supply of the reaction chamber to the second target output power so as to finish etching processing of a semiconductor device in the reaction chamber; the second radio frequency power supply is used for controlling the energy of plasma acted on the semiconductor device; the second output power prediction model is obtained through training of a second sample, and the second sample comprises a plasma power sample and a corresponding second output power sample.

10. An electronic device comprising a memory, a processor and a computer program stored on the memory, characterized in that the processor executes the computer program to carry out the steps of the method according to any one of claims 1-8.