CN117369107A - Detection equipment based on turn-back type objective lens - Google Patents
Detection equipment based on turn-back type objective lens Download PDFInfo
- Publication number
- CN117369107A CN117369107A CN202311665905.6A CN202311665905A CN117369107A CN 117369107 A CN117369107 A CN 117369107A CN 202311665905 A CN202311665905 A CN 202311665905A CN 117369107 A CN117369107 A CN 117369107A
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- light
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- dark field
- objective lens
- bowl
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- 238000001514 detection method Methods 0.000 title claims abstract description 30
- 238000003384 imaging method Methods 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
- G02B21/08—Condensers
- G02B21/12—Condensers affording bright-field illumination
- G02B21/125—Condensers affording bright-field illumination affording both dark- and bright-field illumination
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/02—Objectives
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/02—Objectives
- G02B21/04—Objectives involving mirrors
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention provides a detection device based on a foldback objective, which belongs to the field of semiconductor detection, and comprises an imaging unit, a zoom lens group, a semi-transparent semi-reflective lens, a bright field light incidence lens barrel group, a foldback objective lens group, a compensation lens and a carrier, wherein the foldback objective lens group comprises two modes of an open hole type, an antireflection film and a compensation lens, and a power meter is arranged on an emergent path of dark field light.
Description
Technical Field
The invention belongs to the field of semiconductor detection, and particularly relates to a detection device based on a foldback objective lens.
Background
Because of the complex manufacturing process and the large number of processes, the chip yield of the integrated circuit chip depends on the detection and control level of defects.
The existing graphic wafer defect detection technology mainly comprises two types, namely a bright field defect detection technology and a dark field defect detection technology. The main principle of the bright field defect detection technology is ultraviolet broad spectrum microscopic imaging. Good process adaptability is realized through detection of different ultraviolet bands. The dark field defect detection technology is to utilize ultraviolet laser to obliquely illuminate a wafer to be detected at a certain angle, and collect scattered light signals of the wafer to be detected through a microscope to realize defect detection.
The existing bright field defect detection technology is limited by the brightness of a light source, so that the measurement speed is low, quick measurement cannot be realized, and the measurement speed is far lower than the yield of a photoetching machine. In parallel measurement, only critical layers or critical processes can be detected.
The existing dark field defect detection technology adopts laser as a light source, so that the problem of light source brightness is solved, and the measurement speed is improved. However, the numerical aperture of the existing dark field defect detection system is small, and in order to realize a large field of view and increase sensitivity, the detection needs to be completed by combining measurement of a plurality of channels. The data splicing is complex, the optical processing is complex, and the two-dimensional high NA collection cannot be realized.
The traditional objective lens has compact structure and short working distance, so that the oblique incidence illumination angle is often required to be controlled to be more than 88 degrees, and at the moment, the scattering signal is weaker, and the measurement value is lost; if the conventional objective lens is perforated, the imaging effect of the objective lens is destroyed, and serious stray light and aberration are brought, so that the objective lens cannot be used. Therefore, the above two conventional objective lens arrangements are not feasible.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a detection device based on a folding objective lens, which can solve the problems.
Design principle: by designing a foldback objective for reserving oblique incidence laser illumination vacancies, the high resolution of a broadband bright field and the high speed of a laser dark field are combined, and simultaneous bright and dark field, shan Ming field or single dark field measurement can be realized. In order to realize the effect of rapidly measuring the large field of view of a wafer, the front group adopts a foldback type design through the foldback type objective lens design, and the illumination and reflection channels of oblique incidence laser are constructed through perforating a reflecting mirror or making a special film system, so that the illumination of dark field laser is realized, and the specific design scheme is as follows.
A detection device based on a foldback objective comprises an imaging unit, a zoom lens group, a semi-transparent semi-reflective lens, a bright field light incident lens barrel group and a foldback objective lens group. The foldback type objective lens group comprises an object lens barrel, a bowl-shaped lens and a bottom lens which are sequentially arranged; and a light transmission unit is arranged on the bowl-shaped mirror.
Further, the light transmission unit comprises two light transmission holes formed in the bowl-shaped mirror and used for incidence of dark field light and emergence of reflected light.
Further, a power meter is provided outside the light passing hole for emission.
Further, the light transmission unit comprises two antireflection films on the bowl-shaped mirror, and a compensation mirror is arranged at the antireflection film where the dark field light is incident.
Further, a power meter is provided on the outer side of the antireflection film for dark field light emission.
Compared with the prior art, the invention has the beneficial effects that: the method provides dark field scattering signal collection with large numerical aperture NA, and provides optional mixed double channels of bright field and dark field, so that the fusion of bright and dark field images with the same NA is realized, and the detection precision and sensitivity are improved.
Drawings
FIG. 1 is a schematic diagram of a detecting apparatus according to a first embodiment of the present invention;
fig. 2 is a schematic diagram of a detection apparatus according to a second embodiment.
In the figure, 1, an imaging unit; 2. a zoom lens group; 3. a half-mirror; 4. a bright field light incident lens barrel group; 51. an object lens barrel; 52. bowl-shaped mirror; 53. a bottom lens; 521. a light-transmitting hole; 522. an antireflection film; 523. a compensation mirror; 6. a power meter; 7. a carrier.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
First embodiment
Referring to fig. 1, the inspection apparatus for wafer defect inspection includes an imaging unit 1, a variable magnification lens group 2, a half mirror 3, a bright field light incident lens barrel group 4, and a fold-back type objective lens group.
The imaging unit 1 adopts an imaging sensor such as a TDI camera, and the like, forms image information and transmits the image information to the processor, so that the image information is compared with a standard image to realize defect classification and position determination.
Wherein the fold-back objective group includes an objective tube 51, a bowl-shaped mirror 52, and a bottom lens 53, which are sequentially arranged. A light transmitting unit is provided on the bowl-shaped mirror 52.
The light transmitting unit includes two light transmitting holes 521 formed on the bowl-shaped mirror 52 for incidence of dark field light and emergence of reflected light.
The dark field laser with the inclined angle can directly pass through one light through hole 521 to irradiate the wafer surface, and after being scattered by the pattern wafer, the zero-order reflected light of the dark field laser exits through the light through hole 521 at the other side.
For bright field light, the wafer can be irradiated through the bright field light incidence lens barrel group 4 and the half mirror 3 and through the fold-back type objective lens group.
Further, a power meter 6 is provided outside the light passing hole 521 for emission.
Further, the object to be detected, i.e. the wafer, can be supported, positioned and adjusted by the carrier 7, and the carrier 7 can also move according to a preset track during detection to realize surface traversal of the wafer.
Second embodiment
Unlike the first embodiment, which is in the form of a lens unit, referring to fig. 2, the light transmitting unit of the present embodiment includes two antireflection films 522 on a bowl-shaped mirror 52, and one compensation mirror 523 is provided at the antireflection film 522 where dark field light is incident.
The plated antireflection film 522 is arranged according to the incident and emergent angles of the dark field light, and the arrangement of the antireflection film 522 is adapted to the wave band of the dark field laser, so that the dark field laser can smoothly pass through the foldback objective lens group to illuminate the wafer surface, and then the zero-order specular reflection light is emitted out of the foldback objective lens group through the antireflection film 522 on the other side. Since the front and rear surfaces of the fold-back objective lens are not parallel surfaces, there is an aberration after the laser light passes through, and a compensation mirror 523 needs to be placed at the incidence position of the dark field laser light, so that the incident dark field light can illuminate the wafer surface at a predetermined wavelength.
In this embodiment, one power meter 6 is provided outside the antireflection film 522 for dark-field light emission. The power meter 6 has two functions, namely, the calibration of laser energy can be realized by irradiating a standard reflectivity calibration block, and the energy change of zero-order reflected light in the measurement process can be monitored, and the illumination laser power is regulated based on different wafer reflectivities or process film layers by combining scattered light signals in dark field images, so that a good dynamic range is maintained when light and dark field images are fused.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. Detection equipment based on reentrant objective, its characterized in that: the detection equipment comprises an imaging unit (1), a zoom lens group (2), a semi-transparent and semi-reflective lens (3), a bright field light incidence lens barrel group (4) and a foldback objective lens group;
the foldback type objective lens group comprises an object lens barrel (51), a bowl-shaped lens (52) and a bottom lens (53) which are sequentially arranged;
a light transmitting unit is arranged on the bowl-shaped mirror (52).
2. The detection apparatus according to claim 1, wherein:
the light transmission unit comprises two light transmission holes (521) formed in the bowl-shaped mirror (52) and used for incidence of dark field light and emergence of reflected light.
3. The detection apparatus according to claim 2, characterized in that:
a power meter (6) is provided outside the light passing hole (521) for emitting light.
4. The detection apparatus according to claim 1, wherein:
the light transmission unit comprises two antireflection films (522) on the bowl-shaped mirror (52), and a compensation mirror (523) is arranged at the antireflection film (522) where dark field light is incident.
5. The detection apparatus according to claim 4, wherein:
a power meter (6) is provided outside the antireflection film (522) for dark field light emission.
6. The detection apparatus according to claim 1, wherein:
the product to be detected is supported, positioned and posture-adjusted by the carrier (7).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311665905.6A CN117369107A (en) | 2023-12-07 | 2023-12-07 | Detection equipment based on turn-back type objective lens |
| CN202410149970.1A CN117908240A (en) | 2023-12-07 | 2024-02-02 | Detection equipment based on turn-back type objective lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311665905.6A CN117369107A (en) | 2023-12-07 | 2023-12-07 | Detection equipment based on turn-back type objective lens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117369107A true CN117369107A (en) | 2024-01-09 |
Family
ID=89408144
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311665905.6A Pending CN117369107A (en) | 2023-12-07 | 2023-12-07 | Detection equipment based on turn-back type objective lens |
| CN202410149970.1A Pending CN117908240A (en) | 2023-12-07 | 2024-02-02 | Detection equipment based on turn-back type objective lens |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410149970.1A Pending CN117908240A (en) | 2023-12-07 | 2024-02-02 | Detection equipment based on turn-back type objective lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN117369107A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208738A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Lighting apparatus |
| US5717518A (en) * | 1996-07-22 | 1998-02-10 | Kla Instruments Corporation | Broad spectrum ultraviolet catadioptric imaging system |
| CN107887778A (en) * | 2012-05-22 | 2018-04-06 | 科磊股份有限公司 | Use the solid-state laser and checking system of 193nm lasers |
-
2023
- 2023-12-07 CN CN202311665905.6A patent/CN117369107A/en active Pending
-
2024
- 2024-02-02 CN CN202410149970.1A patent/CN117908240A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208738A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Lighting apparatus |
| US5717518A (en) * | 1996-07-22 | 1998-02-10 | Kla Instruments Corporation | Broad spectrum ultraviolet catadioptric imaging system |
| CN107887778A (en) * | 2012-05-22 | 2018-04-06 | 科磊股份有限公司 | Use the solid-state laser and checking system of 193nm lasers |
Non-Patent Citations (2)
| Title |
|---|
| "兵器工业科学技术词典-光学工程", 31 May 1993, 国防工业出版社, pages: 8 - 84 * |
| 陈绮丽: "大学物理学下册", 31 August 2020, 华中科技大学出版社, pages: 132 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117908240A (en) | 2024-04-19 |
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Application publication date: 20240109 |